Sulfur versus Oxygen Reactivity of Organic Molecules at the Ge(100)-2×1 Surface

Reaction Behaviors of S-, O-, and N-containing Aliphatic Molecules with a Propyl Moiety on Ge(100) Surface

The reaction pathways of 1-propanethiol, 1-propanol, and propylamine molecules, containing a propyl moiety, on a Ge(100) surface were investigated using high-resolution photoemission spectroscopy (HRPES) experiments and density functional theory (DFT) calculations. Upon analysis of the HRPES data, the adsorption of 1-propanethiol and 1-propanol was found to occur through a dissociation reaction, whereas that of propylamine took place via N dative bonding at room temperature. On the basis of our DFT results, adsorption geometries and transition states for each of these molecules on the Ge(100) surface were confirmed. Systematic studies of S-, O-, and N-containing molecules, composed of an identical propyl moiety, on the Ge(100) surface provide insight into the adsorption mechanism of aliphatic molecules containing alkyl chains on the Ge(100) surface.

Surface chemistry effects on work function, ionization potential and electronic affinity of Si(100), Ge(100) surfaces and SiGe heterostructures

We combine density functional theory and many body perturbation theory to investigate the electronic properties of Si(100) and Ge(100) surfaces terminated with halogen atoms (-I, -Br, -Cl, -F) and other chemical functionalizations (-H, -OH, -CH3) addressing the absolute values of their work function, electronic affinity and ionization potential. Our results point out that electronic properties of functionalized surfaces strongly depend on the chemisorbed species and much less on the surface crystal orientation. The presence of halogens at the surface always leads to an increment of the work function, ionization potential and electronic affinity with respect to fully hydrogenated surfaces. On the contrary, the presence of polar -OH and -CH3 groups at the surface leads to a reduction of the aforementioned quantities with respect to the H-terminated system. Starting from the work functions calculated for the Si and Ge passivated surfaces, we apply a simple model to estimate the properties of functionalized SiGe surfaces. The possibility of modulating the work function by changing the chemisorbed species and composition is predicted. The effects induced by different terminations on the band energy line-up profile of SiGe surfaces are then analyzed. Interestingly, our calculations predict a type-II band offset for the H-terminated systems and a type-I band offset for the other cases.

Ring-Opening Reaction of Tetrahydrofuran on Ge(100) Surface

The adsorption structures and reaction mechanism of tetrahydrofuran on a Ge(100) surface were investigated through high-resolution photoemission spectroscopy (HRPES) and density functional theory (DFT) calculations. On the basis of our analysis of the HRPES spectra, two adsorption species consisting of a major Ge-(CH₂)₄-O-Ge structure formed via a ring-opening reaction and a minor molecularly adsorbed structure formed via O dative bonding were identified. Our DFT results provided not only the optimized adsorption structures and their corresponding adsorption energies but also the level of the transition state for the pathway from the molecularly adsorbed species to the major adsorption structure. The results confirmed that the adsorption of tetrahydrofuran on the Ge(100) surface is under both kinetic and thermodynamic controls. Our discovery of the ring-opening reaction is an unprecedented result in the field of Ge(100) surface chemistry.

Work Function Control of Germanium through Carborane-Carboxylic Acid Surface Passivation

Self-assembled monolayers (SAMs) of carborane isomers with different dipole moments passivate germanium to modulate surface work function while maintaining chemical environment and surface energy. To identify head groups capable of monolayer formation on germanium surfaces, we studied thiol-, hydroxyl-, and carboxyl-terminated carboranes. These films were successfully formed with carboxylic acid head groups instead of the archetypal thiol, suggesting that the carborane cluster significantly affects headgroup reactivity. Film characterization included X-ray and ultraviolet photoelectron spectroscopies as well as contact angle goniometry. Using these carboranes, the germanium surface work function was tailored over 0.4 eV without significant changes to wetting properties.

Formation of Germa-ketenimine on the Ge(100) Surface by Adsorption of tert-Butyl Isocyanide

Reactions of the (100) surfaces of Ge and Si with organic molecules have been generally understood within the concept of "dimers" formed by the 2 × 1 surface reconstruction. In this work, the adsorption of tert-butyl isocyanide on the Ge(100)-2 × 1 surface at large exposures is investigated under ultrahigh vacuum conditions. A combination of infrared spectroscopy, X-ray photoelectron spectroscopy, and temperature-programmed desorption experiments along with dispersion-corrected density functional theory calculations is used to determine the surface products. Upon adsorption of a dense monolayer of tert-butyl isocyanide, a product whose structure resembles a germa-ketenimine (N=C=Ge) with σ donation toward and π back-donation from the Ge(100) surface appears. Formation of this structure involves divalent-type surface Ge atoms that arise from cleavage of the Ge(100)-2 × 1 surface dimers. Our results reveal an unprecedented class of reactions of organic molecules at the Ge(100) surface.

A first principles study of H2S adsorption and decomposition on a Ge(100) surface

We employed density functional theory (DFT) calculations to examine the adsorption configurations and possible reaction paths for H₂S on a Ge(100) surface.

Patterning NHS-terminated SAMs on germanium

Here we report a simple, robust approach to patterning functional SAMs on germanium. The protocol relies on catalytic soft-lithographic pattern transfer from an elastomeric stamp bearing pendant immobilized sulfonic acid moieties to an NHS-functionalized bilayer molecular system comprising a primary ordered alkyl monolayer and a reactive ester secondary overlayer. The catalytic polyurethane-acrylate stamp was used to form micrometer-scale features of chemically distinct SAMs on germanium. The methodology represents the first example of patterned SAMs on germanium, a semiconductor material.

Disulfide passivation of the Ge(100)-2 × 1 surface

Understanding the bonding of sulfur at the germanium surface is important to developing good passivation routes for germanium-based electronic devices. The adsorption behavior of ethyl disulfide (EDS) and 1,8-naphthalene disulfide (NDS) at the Ge(100)-2 × 1 surface has been studied under ultrahigh vacuum conditions to investigate both their fundamental reactivity and their effectiveness as passivants of this surface. X-ray photoelectron spectroscopy, multiple internal reflection-infrared spectroscopy, and density functional theory results indicate that both molecules adsorb via S-S dissociation at room temperature. Upon exposure to ambient air, the thiolate adlayer remains intact for both EDS- and NDS-functionalized surfaces, indicating the stability of this surface attachment. Although both systems resist oxidation compared to the bare Ge(100)-2 × 1 surface, the Ge substrate is significantly oxidized in all cases (17-57% relative to the control), with the NDS-passivated surface undergoing up to two times more oxidation than the EDS-passivated surface at the longest air exposure times studied. The difference in passivation capability is attributed to the difference in surface coverage on Ge(100)-2 × 1, where EDS adsorption leads to a saturation coverage 17% higher than that for NDS/Ge(100)-2 × 1.

Periodic trends in organic functionalization of group IV semiconductor surfaces

Organic functionalization of group IV semiconductor surfaces provides a means to precisely control the interfacial properties of some of the most technologically important electronic materials in use today. The 2 x 1 reconstructed group IV (100) surfaces in ultrahigh vacuum, in particular, have a well-defined surface that allows adsorbate-surface interactions to be studied in detail. Surface dimers containing a strong sigma- and weak pi-bond form upon reconstruction of the group IV (100) surfaces, imparting a rich surface reactivity, which allows useful analogies to be made between reactions at the surface and those in classic organic chemistry. To date, most studies have focused on single substrates and a limited number of adsorbate functional groups. In this Account, we bring together experimental and theoretical results from several studies to investigate broader trends in thermodynamics and kinetics of organic molecules reacted with group IV (100)-2 x 1 surfaces. By rationalizing these trends in terms of simple periodic properties, we aim to provide guidelines by which to understand the chemical origin of the observed trends and predict how related molecules or functionalities will react. Results of experimental and theoretical studies are used to show that relative electronegativities and orbital overlap correlate well with surface-adsorbate covalent bond strength, while orbital overlap together with donor electronegativity and acceptor electron affinity correlate with surface-adsorbate dative bond strength. Using such simple properties as predictive tools is limited, of course, but theoretical calculations fill in some of the gaps. The predictive power inherent in periodic trends may be put to use in designing molecules for applications where controlled attachment of organic molecules to semiconductor surfaces is needed. Organic functionalization may facilitate the semiconductor industry's transition from traditional silicon-based architectures to other materials, such as germanium, that offer better electrical properties. Potential applications also exist in other fields ranging from organic and molecular electronics, where control of interfacial properties may allow coupling of traditional semiconductor technology with such developing technologies, to biosensors and nanoscale lithography, where the functionality imparted to the surface may be used directly. Knowledge of thermodynamic and kinetic trends and the fundamental basis of these trends may enable effective development of new functionalization strategies for such applications.