Na Doping in PbTe: Solubility, Band Convergence, Phase Boundary Mapping, and Thermoelectric Properties

Pseudo-nanostructure and trapped-hole release induce high thermoelectric performance in PbTe

Thermoelectric materials can realize direct and mutual conversion between electricity and heat. However, developing a strategy to improve high thermoelectric performance is challenging because of strongly entangled electrical and thermal transport properties. We demonstrate a case in which both pseudo-nanostructures of vacancy clusters and dynamic charge-carrier regulation of trapped-hole release have been achieved in p-type lead telluride-based materials, enabling the simultaneous regulations of phonon and charge carrier transports. We realized a peak zT value up to 2.8 at 850 kelvin and an average zT value of 1.65 at 300 to 850 kelvin. We also achieved an energy conversion efficiency of ~15.5% at a temperature difference of 554 kelvin in a segmented module. Our demonstration shows promise for mid-temperature thermoelectrics across a range of different applications.

Achieving Compatible p/n-Type Half-Heusler Compositions in Valence Balanced/Unbalanced Mg1-xVxNiSb

In thermoelectric and other inorganic materials research, the significance of half-Heusler (HH) compositions following the 18-electron rule has drawn interest in developing and exploiting the potential of intermetallic compounds. For the fabrication of thermoelectric modules, in addition to high-performance materials, having both p- and n-type materials with compatible thermal expansion coefficients is a prerequisite for module development. In this work, the p-type to n-type transition of valence balanced/unbalanced HH composition of Mg1-xVxNiSb was demonstrated by changing the Mg:V chemical ratio. The Seebeck coefficient and power factor of Ti-doped Mg0.57V0.33Ti0.1NiSb are -130 μV K-1 and 0.4 mW m-1 K-2 at 400 K, respectively. In addition, the reduced lattice thermal conductivity (κL < 2.5 W m-1 K-1 at 300 K) of n-type compositions was reported to be much smaller than κL of conventional HH materials. As high thermal conductivity has long been an issue for HH materials, the synthesis of p- and n-type Mg1-xVxNiSb compositions with low lattice thermal conductivity is a promising strategy for producing high-performance HH compounds. Achieving both p- and n-type materials from similar parent composition enabled us to fabricate a thermoelectric module with maximum output power Pmax ∼ 63 mW with a temperature difference of 390 K. This finding supports the benefit of exploring the huge compositional space of valence balanced/unbalanced quaternary HH compositions for further development of thermoelectric devices.

High Thermoelectric Performance in Phonon-Glass Electron-Crystal Like AgSbTe2

Achieving glass-like ultra-low thermal conductivity in crystalline solids with high electrical conductivity, a crucial requirement for high-performance thermoelectrics , continues to be a formidable challenge. A careful balance between electrical and thermal transport is essential for optimizing the thermoelectric performance. Despite this inherent trade-off, the experimental realization of an ideal thermoelectric material with a phonon-glass electron-crystal (PGEC) nature has rarely been achieved. Here, PGEC-like AgSbTe2 is demonstrated by tuning the atomic disorder upon Yb doping, which results in an outstanding thermoelectric performance with figure of merit, zT ≈ 2.4 at 573 K. Yb-doping-induced enhanced atomic ordering decreases the overlap between the hole and phonon mean free paths and consequently leads to a PGEC-like transport behavior in AgSbTe2 . A twofold increase in electrical mobility is observed while keeping the position of the Fermi level (EF ) nearly unchanged and corroborates the enhanced crystalline nature of the AgSbTe2 lattice upon Yb doping for electrical transport. The cation-ordered domains, lead to the formation of nanoscale superstructures (≈2 to 4 nm) that strongly scatter heat-carrying phonons, resulting in a temperature-independent glass-like thermal conductivity. The strategy paves the way for realizing high thermoelectric performance in various disordered crystals by making them amorphous to phonons while favoring crystal-like electrical transport.

Promoted Na Solubility and Modified Band Structure for Achieving Exceptional Average ZT by Extra Mn Doping in PbTe

Na doping strategy provides an effective avenue to upgrade the thermoelectric performance of PbTe-based materials by optimizing electrical properties. However, the limited solubility of Na inherently restricts the efficiency of doping, resulting in a relatively low average ZT, which poses challenges for the development and application of subsequent devices. Herein, to address this issue, the introduced spontaneous Pb vacancies and additional Mn doping synergistically promote Na solubility with a further modified valence band structure. Furthermore, the induced massive point defects and multiscale microstructure greatly strengthen the scattering of phonons over a wide frequency range, leading to a remarkable ultralow lattice thermal conductivity of ∼0.42 W m-1 K-1. As a result, benefiting from the significantly enhanced Seebeck coefficient and superior thermal transports, a high peak ZT of ∼2.1 at 773 K and an excellent average ZT of ∼1.4 between 303 and 823 K are simultaneously achieved in Pb0.93Na0.04Mn0.02Te. This work proposes a simple and constructive method to obtain high-performance PbTe-based materials and is promising for the development of thermoelectric power generation devices.

Improved Thermoelectric Performance of p-Type PbTe by Entropy Engineering and Temperature-Dependent Precipitates

Entropy engineering is aneffective scheme to reduce the thermal conductivity of thermoelectric materials, but it inevitably deteriorates the carrier mobility. Here, we report the optimization of thermoelectric performance of PbTe by combining entropy engineering and nanoprecipitates. In the continuously tuned compounds of Pb0.98Na0.02Te(1-2x)SxSex, we show that the x = 0.05 sample exhibits an exceptionally low thermal conductivity relative to its configuration entropy. By introducing Mn doping, the produced temperature-dependent nanoprecipitates of MnSe cause the high-temperature thermal conductivity to be further reduced. A very low lattice thermal conductivity of 0.38 W m-1 K-1 is achieved at 825 K. Meanwhile, the carrier mobility of the samples is only slightly influenced, owing to the well-controlled configuration entropy and the size of nanoprecipitates. Finally, a high peak zT of ∼2.1 at 825 K is obtained in the Pb0.9Na0.04Mn0.06Te0.9S0.05Se0.05 alloy.

Advances in thermoelectric AgBiSe2: Properties, strategies, and future challenges

Thermoelectric materials are attracting considerable attention to alleviate the global energy crisis by enabling the direct conversion of heat into electricity. As a class of I-V-VI2 semiconductors, AgBiSe2 is expected to be the potential thermoelectric material to replace conventional PbTe-based compounds due to its non-toxic and abundant nature of its constituent elements. This review article summarizes the fundamental properties of AgBiSe2, thermoelectric properties, the effect of different dopants on its transport properties and entropy engineering for cubic phase stabilization with the detailed description of related techniques used to analyze the properties of AgBiSe2. The current thermoelectric figure-of-merit and approaches to further improve performance and operational stability are also discussed.

Rapid and Reversible Lithium Insertion in the Wadsley-Roth-Derived Phase NaNb13O33

The development of new high-performing battery materials is critical for meeting the energy storage requirements of portable electronics and electrified transportation applications. Owing to their exceptionally high rate capabilities, high volumetric capacities, and long cycle lives, Wadsley-Roth compounds are promising anode materials for fast-charging and high-power lithium-ion batteries. Here, we present a study of the Wadsley-Roth-derived NaNb13O33 phase and examine its structure and lithium insertion behavior. Structural insights from combined neutron and synchrotron diffraction as well as solid-state nuclear magnetic resonance (NMR) are presented. Solid-state NMR, in conjunction with neutron diffraction, reveals the presence of sodium ions in perovskite A-site-like block interior sites as well as square-planar block corner sites. Through combined experimental and computational studies, the high rate performance of this anode material is demonstrated and rationalized. A gravimetric capacity of 225 mA h g-1, indicating multielectron redox of Nb, is accessible at slow cycling rates. At a high rate, 100 mA h g-1 of capacity is accessible in 3 min for micrometer-scale particles. Bond-valence mapping suggests that this high-rate performance stems from fast multichannel lithium diffusion involving octahedral block interior sites. Differential capacity analysis is used to identify optimal cycling rates for long-term performance, and an 80% capacity retention is achieved over 600 cycles with 30 min charging and discharging intervals. These initial results place NaNb13O33 within the ranks of promising new high-rate lithium-ion battery anode materials that warrant further research.

Enhanced Thermoelectric Performance of Rare-Earth-Free n-Type Oxide Perovskite Composite with Graphene Analogous 2D MXene

Here, the first experimental demonstration on the effect of incorporating new generation 2D material, MXene, on the thermoelectric performance of rare-earth-free oxide perovskite is reported. The charge localization phenomenon is predominant in the electron transport of doped SrTiO₃ perovskites, which deters from achieving a higher thermoelectric power factor in these oxides. In this work, it is shown that incorporating Ti₃ C₂ T_x MXene in a matrix of SrTi_0.85 Nb_0.15 O₃ (STN) facilitates the delocalization of electrons resulting in better than single-crystal-like electron mobility in polycrystalline composites. A 1851% increase in electrical conductivity and a 1000% enhancement in power factor are attained. Besides, anharmonicity caused by MXene in the STN matrix has led to enhanced Umklapp scattering giving rise to lower lattice thermal conductivity. Hence, 700% ZT enhancement is achieved in this composite. Further, a prototype of thermoelectric generator (TEG) using only n-type STN + MXene is fabricated and a power output of 38 mW is obtained, which is higher than the reported values for oxide TEG.

Lead Vacancy Promotes Sodium Solubility to Achieve Ultra-High zT in Only Ternary Pb1- x Nax Te

Chemical doping of sodium is an indispensable means to optimize thermoelectric properties of PbTe materials, while a bottleneck is that an aliovalent atom doping leads to spontaneous intrinsic defects in the PbTe matrix, resulting in low dopant solubility. Therefore, it is urgent to improve the doping efficiency of Na for maximizing optimization. Here, an amazing new insight that the intentionally introduced Pb vacancies can promote Na solubility in ternary Pb_{1- x} Na_x Te is reported. Experimental analysis and theoretical calculations provide new insights into the inherent mechanism of the enhancement of Na solubility. The Pb vacancies and the resultant more dissolved Na not only synergistically optimize the carrier concentration and further facilitate the band convergence, but also induce a large number of dense dislocations in the grains. Consequently, benefiting from the self-enhancement of Seebeck coefficient and the minimization of lattice thermal conductivity, an 18% growth is obtained for the figure of merit zT in vacancy-containing Pb_0.95 Na_0.04 Te sample, reaching maximum zT_max  ≈ 2.0 at 823 K, which achieves an ultra-high performance in only Na-doped ternary Pb_{1- x} Na_x Te materials. The strategy utilized here provides a novel route to optimize PbTe materials and represents an important step forward in manipulating thermoelectrics to improve dopant solubility.

Highly Stable Metal─Na0.02Pb0.98Te Contacts for Medium Temperature Thermoelectric Devices

In the medium temperature (600-850 K) range, Na_0.02Pb_0.98Te is a highly efficient p-type thermoelectric compound. Device fabrication utilizing this compound for power generation demands highly stable low-contact resistance contacts with metal electrodes. This work investigates the microstructural, electrical, mechanical, and thermochemical stability of Na_0.02Pb_0.98Te-metal (Ni, Fe, and Co) contacts made by a one-step vacuum hot pressing process. Direct contact mostly resulted in either an interface with poor mechanical integrity, as in Co and Fe, or poisoning of the TE compound, as in the case of Ni, which results in high specific contact resistance (r_c). In Ni and Co, adding a SnTe interlayer lowers the r_c and strengthens the contact. It does not, however, effectively stop Ni from diffusing into Na_0.02Pb_0.98Te. The bonding is poor in the Fe/SnTe/Na_0.02Pb_0.98Te contacts due to the absence of any reaction at the Fe/SnTe interface. A composite buffer layer Co + 75 vol % SnTe with SnTe improves the mechanical stability of the Co contact with moderately lesser r_c than pure SnTe alone. However, a similar approach with Fe does not yield stable contact. The Co/Co + 75 vol % SnTe/SnTe/Na_0.02Pb_0.98Te contact exhibits r_c less than 50 μΩ cm² and has good microstructural and mechanical stability after annealing at 723 K for 170 h.

Preparation of Heavily Doped P-Type PbSe with High Thermoelectric Performance by the NaCl Salt-Assisted Approach

Thermoelectric (TE) technology, which can convert scrap heat into electricity, has attracted considerable attention. However, broader applications of TE are hindered by lacking high-performance thermoelectric materials, which can be effectively progressed by regulating the carrier concentration. In this work, a series of PbSe(NaCl)x (x = 3, 3.5, 4, 4.5) samples were synthesized through the NaCl salt-assisted approach with Na+ and Cl− doped into their lattice. Both theoretical and experimental results demonstrate that manipulating the carrier concentration by adjusting the content of NaCl is conducive to upgrading the electrical transport properties of the materials. The carrier concentration elevated from 2.71 × 1019 cm−3 to 4.16 × 1019 cm−3, and the materials demonstrated a maximum power factor of 2.9 × 10−3 W m−1 K−2. Combined with an ultralow lattice thermal conductivity of 0.7 W m−1 K−1, a high thermoelectric figure of merit (ZT) with 1.26 at 690 K was attained in PbSe(NaCl)4.5. This study provides a guideline for chemical doping to improve the thermoelectric properties of PbSe further and promote its applications.

Realization of Band Convergence in p-Type TiCoSb Half-Heusler Alloys Significantly Enhances the Thermoelectric Performance

Band engineering is a promising approach that proved successful in enhancing the thermoelectric performance of several families of thermoelectric materials. Here, we show how this mechanism can be induced in the p-type TiCoSbhalf-Heusler (HH) compound to effectively improve the Seebeck coefficient. Both the Pisarenko plot and electronic band structure calculations demonstrate that this enhancement is due to increased density-of-states effective mass resulting from the convergence of two valence band maxima. Our calculations evidence that the valence band maximum of TiCoSb lying at the Γ point exhibits a small energy difference of 51 meV with respect to the valence band edge at the L point. Experimentally, this energy offset can be tuned by both Fe and Sn substitutions on the Co and Sb site, respectively. A Sn doping level as low as x = 0.03 is sufficient to drive more than ∼100% increase in the power factor at room temperature. Further, defects at various length scales, that include point defects, edge dislocations, and nanosized grains evidenced by electron microscopy (field emission scanning electron microscopy (FESEM) and high-resolution transmission electron microscopy (HRTEM)), result in enhanced phonon scattering which substantially reduces the lattice thermal conductivity to ∼4.2 W m^-1 K^-1 at 873 K. Combined with enhanced power factor, a peak ZT value of ∼0.4 was achieved at 873 K in TiCo_0.85Fe_0.15Sb_0.97Sn_0.03. In addition, the microhardness and fracture toughness were found to be enhanced for all of the synthesized samples, falling in the range of 8.3-8.6 GPa and 1.8-2 MPa·m^-1/2, respectively. Our results highlight how the combination of band convergence and microstructure engineering in the HH alloy TiCoSb is effective for tuning its thermoelectric performance.

Suppressing Charged Cation Antisites via Se Vapor Annealing Enables p-Type Dopability in AgBiSe2 -SnSe Thermoelectrics

Cation disordering is commonly found in multinary cubic compounds, but its effect on electronic properties has been neglected because of difficulties in determining the ordered structure and defect energetics. An absence of rational understanding of the point defects present has led to poor reproducibility and uncontrolled conduction type. AgBiSe₂ is a representative compound that suffers from poor reproducibility of thermoelectric properties, while the origins of its intrinsic n-type conductivity remain speculative. Here, it is demonstrated that cation disordering is facilitated by Bi_Ag charged antisite defects in cubic AgBiSe₂ which also act as a principal donor defect that greatly controls the electronic properties. Using density functional theory calculations and in situ Raman spectroscopy, how saturation annealing with selenium vapor can stabilize p-type conductivity in cubic AgBiSe₂ alloyed with SnSe at high temperatures is elucidated. With stable and controlled hole concentration, a peak is observed in the weighted mobility and the density-of-states effective mass in AgBiSnSe₃ , implying an increased valley degeneracy in this system. These findings corroborate the importance of considering the defect energetics for exploring the dopability of ternary thermoelectric chalcogenides and engineering electronic bands by controlling self-doping.

Processing High-Performance Thermoelectric Materials in a Green Way: A Proof of Concept in Cold Sintered PbTe0.94Se0.06

For years, most of the advanced polycrystalline thermoelectric (TE) materials are fabricated by spark plasma sintering (SPS) in the research field, mainly because of its high processing efficiency. However, issues like high energy consumption and an expensive apparatus have prevented the application of this strategy in industry. Herein, taking PbTe_0.94Se_0.06 (PTS) as a typical n-type mid-temperature material, we demonstrate that the cold sintering process (CSP) can serve as a green and cost-effective technology for preparing advanced TE materials. By selecting the solvothermal precursors as liquid sintering aids, the CSP-densified PTS shows a maximum figure of merit of 0.96 at 700 K, which is on par with, if not better than, the reported similar materials prepared by SPS. This remarkable performance is ascribed to the distinct densification procedure in the CSP: (1) the ultralow temperature alleviates the precipitation of Pb, which preserves the high carrier concentration of PTS; (2) the transient liquid phase forms intimate grain boundaries comparable to the high-temperature sintered one, leading to a high carrier mobility; (3) the dissolution-precipitation process greatly restrains the coarsening of precipitates, which effectively suppresses the bipolar effect and lattice thermal conductivity due to enhanced scattering. We believe that these results can greatly encourage the application of CSP in the future development of TE materials.

Development of a High Perfomance Gas Thermoelectric Generator (TEG) with Possibible Use of Waste Heat

A huge concern regarding global warming, as well as the depletion of natural fuel resources, has led to a wide search for alternative energy sources. Due to their high reliability and long operation time, thermoelectric generators are of significant interest for waste heat recovery and power generation. The main disadvantage of TEGs is the low efficiency of thermoelectric commercial modules. In this work, a unique design for a multilayer TE unicouple is suggested for an operating temperature range of 50–600 °C. Two types of thermoelectric materials were selected: «low temperature» n-and p-type TE materials (for the operating temperature range of 50–300 °C) based on Bi2Te3 compounds and «middle temperature» (for the operating temperature range of 300–600 °C) n- and p-type TE materials based on the PbTe compound. The hot extrusion technology was applied to fabricate n- and p-type low-temperature TE materials. A unique design of multilayer TEG was experienced to achieve an efficiency of up to 15%. This allows for the possibility of extracting this amount of electrical power from the heat generated for domestic and water heating.

Thermoelectric Properties of Cu2Te Nanoparticle Incorporated N-Type Bi2Te2.7Se0.3

To develop highly efficient thermoelectric materials, the generation of homogeneous heterostructures in a matrix is considered to mitigate the interdependency of the thermoelectric compartments. In this study, Cu₂Te nanoparticles were introduced onto Bi₂Te_2.7Se_0.3 n-type materials and their thermoelectric properties were investigated in terms of the amount of Cu₂Te nanoparticles. A homogeneous dispersion of Cu₂Te nanoparticles was obtained up to 0.4 wt.% Cu₂Te, whereas the Cu₂Te nanoparticles tended to agglomerate with each other at greater than 0.6 wt.% Cu₂Te. The highest power factor was obtained under the optimal dispersion conditions (0.4 wt.% Cu₂Te incorporation), which was considered to originate from the potential barrier on the interface between Cu₂Te and Bi₂Te_2.7Se_0.3. The Cu₂Te incorporation also reduced the lattice thermal conductivity, and the dimensionless figure of merit ZT was increased to 0.75 at 374 K for 0.4 wt.% Cu₂Te incorporation compared with that of 0.65 at 425 K for pristine Bi₂Te_2.7Se_0.3. This approach could also be an effective means of controlling the temperature dependence of ZT, which could be modulated against target applications.

Role of Fluoride Doping in Low-Temperature Combustion-Synthesized ZrOx Dielectric Films

Zirconium oxide (ZrO_x) is an attractive metal oxide dielectric material for low-voltage, optically transparent, and mechanically flexible electronic applications due to the high dielectric constant (κ ∼ 14-30), negligible visible light absorption, and, as a thin film, good mechanical flexibility. In this contribution, we explore the effect of fluoride doping on structure-property-function relationships in low-temperature solution-processed amorphous ZrO_x. Fluoride-doped zirconium oxide (F:ZrO_x) films with a fluoride content between 1.7 and 3.2 in atomic (at) % were synthesized by a combustion synthesis procedure. Irrespective of the fluoride content, grazing incidence X-ray diffraction, atomic-force microscopy, and UV-vis spectroscopy data indicate that all F:ZrO_x films are amorphous, atomically smooth, and transparent in visible light. Impedance spectroscopy measurements reveal that unlike solution-processed fluoride-doped aluminum oxide (F:AlO_x), fluoride doping minimally affects the frequency-dependent capacitance instability of solution-processed F:ZrO_x films. This result can be rationalized by the relatively weak Zr-F versus Zr-O bonds and the large ionic radius of Zr⁺⁴, as corroborated by EXAFS analysis and MD simulations. Nevertheless, the performance of pentacene thin-film transistors (TFTs) with F:ZrO_x gate dielectrics indicates that fluoride incorporation reduces I-V hysteresis in the transfer curves and enhances bias stress stability versus TFTs fabricated with analogous, but undoped ZrO_x films as gate dielectrics, due to reduced trap density.

An Overview of the Strategies for Tin Selenide Advancement in Thermoelectric Application

Chalcogenide, tin selenide-based thermoelectric (TE) materials are Earth-abundant, non-toxic, and are proven to be highly stable intrinsically with ultralow thermal conductivity. This work presented an updated review regarding the extraordinary performance of tin selenide in TE applications, focusing on the crystal structures and their commonly used fabrication methods. Besides, various optimization strategies were recorded to improve the performance of tin selenide as a mid-temperature TE material. The analyses and reviews over the methodologies showed a noticeable improvement in the electrical conductivity and Seebeck coefficient, with a noticeable decrement in the thermal conductivity, thereby enhancing the tin selenide figure of merit value. The applications of SnSe in the TE fields such as microgenerators, and flexible and wearable devices are also discussed. In the future, research in low-dimensional TE materials focusing on nanostructures and nanocomposites can be conducted with the advancements in material science technology as well as microtechnology and nanotechnology.

High Thermoelectric Performance of p-Type PbTe Enabled by the Synergy of Resonance Scattering and Lattice Softening

In this work, we show the simultaneous enhancement of electrical transport and reduction of phonon propagation in p-type PbTe codoped with Tl and Na. The effective use of advanced electronic structure engineering improves the thermoelectric power factor S²σ over the temperature range from 300 to 825 K. A rise in the Seebeck coefficient S was obtained due to the enhanced effective mass m*, coming from the Tl resonance state in PbTe. Due to the presence of additional carriers brought by Na codoping, electrical conductivity became significantly improved. Furthermore, Tl and Na impurities induced crystal lattice softening, remarkably reducing lattice thermal conductivity, which was confirmed by a measured low speed of sound v_m and high internal strain Cε_XRD. Eventually, the combination of both the attuned electronic structure and the lattice softening effects led to a very high ZT value of up to ∼2.1 for the Pb_1-x-yTl_xNa_yTe samples. The estimated energy conversion efficiency shows the extraordinary value of 15.4% (T_c = 300 K, T_h = 825 K), due to the significantly improved average thermoelectric figure of merit ZT_ave = 1.05. This work demonstrates that the combination of impurity resonance scattering and crystal lattice softening can be a breakthrough concept for advancing thermoelectrics.

Regulating Te Vacancies through Dopant Balancing via Excess Ag Enables Rebounding Power Factor and High Thermoelectric Performance in p-Type PbTe

Thermoelectric properties are frequently manipulated by introducing point defects into a matrix. However, these properties often change in unfavorable directions owing to the spontaneous formation of vacancies at high temperatures. Although it is crucial to maintain high thermoelectric performance over a broad temperature range, the suppression of vacancies is challenging since their formation is thermodynamically preferred. In this study, using PbTe as a model system, it is demonstrated that a high thermoelectric dimensionless figure of merit, zT ≈ 2.1 at 723 K, can be achieved by suppressing the vacancy formation via dopant balancing. Hole-killer Te vacancies are suppressed by Ag doping because of the increased electron chemical potential. As a result, the re-dissolution of Na2 Te above 623 K can significantly increase the hole concentration and suppress the drop in the power factor. Furthermore, point defect scattering in material systems significantly reduces lattice thermal conductivity. The synergy between defect and carrier engineering offers a pathway for achieving a high thermoelectric performance by alleviating the power factor drop and can be utilized to enhance thermoelectric properties of thermoelectric materials.

Zn-Induced Defect Complexity for the High Thermoelectric Performance of n-Type PbTe Compounds

Although defect engineering is the core strategy to improve thermoelectric properties, there are limited methods to effectively modulate the designed defects. Herein, we demonstrate that a high ZT value of 1.36 at 775 K and a high average ZT value of 0.99 in the temperature range from 300 to 825 K are realized in Zn-containing PbTe by designing complex defects. By combining first-principles calculations and experiments, we show that Zn atoms occupy both Pb sites and interstitial sites in PbTe and couple with each other. The contraction stress induced via substitutional Zn on Pb sites alleviates the swelling stress by Zn atoms occupying the interstitial sites and promotes the solubility of interstitial Zn atoms in the structure of PbTe. The stabilization of Zn impurity as a complex defect extends the region of PbTe phase stability toward Pb_0.995Zn_0.02Te, while the solid solution region in the other direction of the ternary phase diagram is much smaller. The evolution of defects in PbTe was further explicitly corroborated by aberration-corrected scanning transmission electron microscopy (Cs-corrected STEM) and positron annihilation measurement. The Zn atoms compensate the Pb vacancies (V_Pb) and Zn interstitials (Zn_i) significantly improve the electron concentration, producing a high carrier mobility of 1467.7 cm² V^-1 s^-1 for the Pb_0.995Zn_0.02Te sample. A high power factor of 4.11 mW m^-1 K^-2 is achieved for the Pb_0.995Zn_0.02Te sample at 306 K. This work provides new insights into understanding the nature and evolution of the defects in n-type PbTe as well as improving the electronic and thermal transport properties toward higher thermoelectric performance.

Thermoelectric CoGeTe with an Orthorhombic Crystal Symmetry and Balance of the Electrical and Thermal Properties

Applying crystal symmetry to discover and optimize the performance of thermoelectric (TE) materials has attracted much attention. Here, we report CoGeTe with a middle-class crystalline system as a novel n-type TE material. Density functional theory indicates that orthorhombic CoGeTe shows multiband dispersion near the bottom of the conduction band, which is mainly occupied by the Co 3d states. Through Ni doping, these multiple bands can be activated, leading to a maximum power factor of 1.14 mW/m K²@786 K for Co_0.95Ni_0.05GeTe. In addition, phonon-dispersion calculations reveal that CoGeTe possesses relatively strong harmonic properties, including sound velocity and Debye temperature. Furthermore, the local distorted CoGe₃Te₃ octahedron in the matrix is beneficial for anharmonic phonon scattering. In particular, the Grüneisen parameter of Te in the crystal structure is clearly larger than those of Co and Ge. The observed thermal conductivity of Co_0.95Ni_0.05GeTe is between 6.50 and 5.38 W/m K in the temperature range 300-860 K. Owing to the combination of the enhanced power factor and reduced thermal conductivity, the maximum zT value reaches 0.18 at 860 K. This study suggests that TE materials with orthorhombic structures provide an ideal platform to balance the power factor and thermal conductivity in search of high-performance thermoelectrics.

When band convergence is not beneficial for thermoelectrics

Band convergence is considered a clear benefit to thermoelectric performance because it increases the charge carrier concentration for a given Fermi level, which typically enhances charge conductivity while preserving the Seebeck coefficient. However, this advantage hinges on the assumption that interband scattering of carriers is weak or insignificant. With first-principles treatment of electron-phonon scattering in the CaMg2Sb2-CaZn2Sb2 Zintl system and full Heusler Sr2SbAu, we demonstrate that the benefit of band convergence can be intrinsically negated by interband scattering depending on the manner in which bands converge. In the Zintl alloy, band convergence does not improve weighted mobility or the density-of-states effective mass. We trace the underlying reason to the fact that the bands converge at a one k-point, which induces strong interband scattering of both the deformation-potential and the polar-optical kinds. The case contrasts with band convergence at distant k-points (as in the full Heusler), which better preserves the single-band scattering behavior thereby successfully leading to improved performance. Therefore, we suggest that band convergence as thermoelectric design principle is best suited to cases in which it occurs at distant k-points.

Anion exchanged Cl doping achieving band sharpening and low lattice thermal conductivity for improving thermoelectric performance in SnTe

Cl doping achieves band sharpening as a potential strategy for improving the power factor in SnTe thermoelectrics.