1
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Kawami Y, Tran XQ, Yamamoto T, Yoshioka S, Murakami Y, Matsumura S, Nogita K, Zou J. Cu-Atom Locations in Rocksalt SnTe Thermoelectric Alloy. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024:e2410508. [PMID: 39363814 DOI: 10.1002/adma.202410508] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/19/2024] [Revised: 09/26/2024] [Indexed: 10/05/2024]
Abstract
The development of functional thermoelectric materials requires direct evidence of dopants' locations to rationally design the electronic and phononic structure of the host matrix. In this study, Cs-corrected scanning transmission electron microscopy and energy dispersive X-ray spectroscopy is employed at the atomic scale to identify Cu atoms' locations in a Cu-doped SnTe thermoelectric alloy. It is revealed that Cu atoms in the rocksalt SnTe form solid solutions at both Sn and Te sites, contrary to their electronegativity order and the intentional Cu doping at Sn sites. Cu atoms are also located at the tetrahedral and crowdion sites of the face-centred cubic structure, with varying degrees of correlations. Such high flexibility of Cu atoms in the rocksalt SnTe offers diverse phonon-scattering mechanisms conducive to the ultra-low lattice thermal conductivity of singly Cu-doped SnTe. This study offers atomic-scale insights for achieving more precise dopant engineering, leading to the accelerated development of functional thermoelectric materials.
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Affiliation(s)
- Youichirou Kawami
- School of Mechanical and Mining Engineering, The University of Queensland, Brisbane, QLD, 4072, Australia
- Department of Applied Quantum Physics and Nuclear Engineering, Kyushu University, 744 Motooka, Nishi-ku, Fukuoka, 819-0395, Japan
- The Ultramicroscopy Research Center, Kyushu University, Fukuoka, Japan
| | - Xuan Quy Tran
- Department of Applied Quantum Physics and Nuclear Engineering, Kyushu University, 744 Motooka, Nishi-ku, Fukuoka, 819-0395, Japan
| | - Tomokazu Yamamoto
- Department of Applied Quantum Physics and Nuclear Engineering, Kyushu University, 744 Motooka, Nishi-ku, Fukuoka, 819-0395, Japan
- The Ultramicroscopy Research Center, Kyushu University, Fukuoka, Japan
| | - Satoru Yoshioka
- Department of Applied Quantum Physics and Nuclear Engineering, Kyushu University, 744 Motooka, Nishi-ku, Fukuoka, 819-0395, Japan
| | - Yasukazu Murakami
- Department of Applied Quantum Physics and Nuclear Engineering, Kyushu University, 744 Motooka, Nishi-ku, Fukuoka, 819-0395, Japan
- The Ultramicroscopy Research Center, Kyushu University, Fukuoka, Japan
| | - Syo Matsumura
- Department of Applied Quantum Physics and Nuclear Engineering, Kyushu University, 744 Motooka, Nishi-ku, Fukuoka, 819-0395, Japan
- The Ultramicroscopy Research Center, Kyushu University, Fukuoka, Japan
| | - Kazuhiro Nogita
- School of Mechanical and Mining Engineering, The University of Queensland, Brisbane, QLD, 4072, Australia
- Nihon Superior Centre for the Manufacture of Electronic Materials (NS CMEM), The University of Queensland, Brisbane, QLD, 4072, Australia
| | - Jin Zou
- School of Mechanical and Mining Engineering, The University of Queensland, Brisbane, QLD, 4072, Australia
- Centre for Microscopy and Microanalysis, The University of Queensland, Brisbane, QLD, 4072, Australia
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2
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Li Z, Wang L, Abbas A, Zong Y, Tan C, Sun Y, Wang H, Su W, Wang C, Wang H. Vacancy Suppression and Resonant Level Rendering Extraordinary Power Factor in Sn 0.99In 0.01Te/Tourmaline Composite. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2024; 20:e2402651. [PMID: 38747046 DOI: 10.1002/smll.202402651] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/03/2024] [Revised: 05/07/2024] [Indexed: 10/04/2024]
Abstract
SnTe, as a potential medium-temperature thermoelectric material, reaches a maximum power factor (PF) usually above 750 K, which is not conducive to continuous high-power output in practical applications. In this study, PF is maintained at high values between 18.5 and 25 µW cm-1 K-2 for Sn0.99In0.01Te-x wt% tourmaline samples within the temperature range of 323 to 873 K, driving the highest PFeng of 1.2 W m-1 K-1 and PFave of 22.5 µW cm-1 K-2, over 2.5 times that of pristine SnTe. Such an extraordinary PF is attributed to the synergy of resonant levels and Sn vacancy suppression. Specifically, the Seebeck coefficient increases dramatically, reaching 88 µV K-1 at room temperature. Meanwhile, by Sn vacancy suppression, carrier concentration, and mobility are optimized to ≈1019 cm-3 and 740 cm2 V-1 s-1, respectively. With the tourmaline compositing, Sn vacancies are further suppressed and the thermal conductivity simultaneously decreases, with the minimum lattice thermal conductivity of 0.9 W m-1 K-1. Finally, the zT value ≈0.8 is obtained in the Sn0.99In0.01Te sample. The peak of the power output density reaches 0.89 W cm-2 at a temperature difference of 600 K. Such SnTe alloys with high and "temperature-independent" PF will offer an option for realizing high output power in thermoelectric devices.
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Affiliation(s)
- Zhihao Li
- School of Physics, State Key Laboratory of Crystal Materials, Shandong University, Jinan, 250100, P. R. China
| | - Long Wang
- School of Physics, State Key Laboratory of Crystal Materials, Shandong University, Jinan, 250100, P. R. China
| | - Adeel Abbas
- School of Physics, State Key Laboratory of Crystal Materials, Shandong University, Jinan, 250100, P. R. China
| | - Yujie Zong
- School of Physics, State Key Laboratory of Crystal Materials, Shandong University, Jinan, 250100, P. R. China
| | - Chang Tan
- School of Physics, State Key Laboratory of Crystal Materials, Shandong University, Jinan, 250100, P. R. China
| | - Yuqing Sun
- School of Physics, State Key Laboratory of Crystal Materials, Shandong University, Jinan, 250100, P. R. China
| | - Hongxiang Wang
- School of Physics, State Key Laboratory of Crystal Materials, Shandong University, Jinan, 250100, P. R. China
| | - Wenbin Su
- School of Physics, State Key Laboratory of Crystal Materials, Shandong University, Jinan, 250100, P. R. China
| | - Chunlei Wang
- School of Physics, State Key Laboratory of Crystal Materials, Shandong University, Jinan, 250100, P. R. China
| | - Hongchao Wang
- School of Physics, State Key Laboratory of Crystal Materials, Shandong University, Jinan, 250100, P. R. China
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3
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Wang X, Wang C, Wang Y, Hao M, Cui S, Huang X, Wang C, Chen J, Cheng Z, Wang J. Enhanced Thermoelectric Performance of N-Type PbSe Through Semi-Coherent Nanostructure by AgCuTe Alloying. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2024:e2403852. [PMID: 39046073 DOI: 10.1002/smll.202403852] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/12/2024] [Revised: 06/25/2024] [Indexed: 07/25/2024]
Abstract
N-type PbSe thermoelectric materials encounter challenges in improving the power factor due to the single-band structure near the Fermi level, which obstructs typical band convergence. The primary strategy for enhancing the thermoelectric figure of merit (ZT) for n-type PbSe involves reducing lattice thermal conductivity (κlat) by introducing various defect structures. However, lattice mismatches resulting from internal defects within the matrix can diminish carrier mobility, thereby affecting electrical transport properties. In this study, n-type AgCuTe-alloyed PbSe systems achieve a peak ZT value of ≈1.5 at 773 K. Transmission electron microscopy reveals nanoprecipitates of Ag2Te, the room temperature second phase of AgCuTe, within the PbSe matrix. Meanwhile, a unique semi-coherent phase boundary is observed between the PbSe matrix and the Ag2Te nanoprecipitates. This semi-coherent phase interface effectively scatters low-frequency phonons while minimizing damage to carrier mobility. Additionally, the dynamic doping effect of Cu atoms from the decomposition of AgCuTe within the matrix further optimize the high-temperature thermoelectric performance. Overall, these factors significantly enhance the ZT across the whole temperature range. The ZT value of ≈1.5 indicates high competitiveness compared to the latest reported n-type PbSe materials, suggesting that these findings hold promise for advancing the development of efficient thermoelectric systems.
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Affiliation(s)
- Xinxin Wang
- Institute for Computational Materials Science, School of Physics and Electronics, Henan University, Kaifeng, 475004, China
| | - Chao Wang
- Institute for Computational Materials Science, School of Physics and Electronics, Henan University, Kaifeng, 475004, China
| | - Yajing Wang
- Institute for Computational Materials Science, School of Physics and Electronics, Henan University, Kaifeng, 475004, China
| | - Min Hao
- Institute for Computational Materials Science, School of Physics and Electronics, Henan University, Kaifeng, 475004, China
| | - Shengqiang Cui
- Institute for Computational Materials Science, School of Physics and Electronics, Henan University, Kaifeng, 475004, China
| | - Xudong Huang
- Institute for Computational Materials Science, School of Physics and Electronics, Henan University, Kaifeng, 475004, China
| | - Chunhui Wang
- Institute for Computational Materials Science, School of Physics and Electronics, Henan University, Kaifeng, 475004, China
| | - Jing Chen
- School of Electronics and Information, Zhengzhou University of Light Industry, Zhengzhou, 450002, China
| | - Zhenxiang Cheng
- Institute for Superconducting and Electronic Materials, Innovation Campus, University of Wollongong, Squires Way, North Wollongong, 2522, Australia
| | - Jianli Wang
- Institute for Superconducting and Electronic Materials, Innovation Campus, University of Wollongong, Squires Way, North Wollongong, 2522, Australia
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4
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Basit A, Hussain T, Li X, Xin J, Zhang B, Zhou X, Wang G, Dai JY. Thermoelectric Transport Performance in p-Type AgSbTe 2-Based Materials through Entropy Engineering. ACS APPLIED MATERIALS & INTERFACES 2024; 16:31363-31371. [PMID: 38856161 DOI: 10.1021/acsami.4c06836] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2024]
Abstract
Being a major obstacle, Ag2Te has always been restricted in p-type AgSbTe2-based materials to improve their thermoelectric performance. This work reveals a stabilized AgSbTe2 through Sn/Ge alloying as synthesized by melting, annealing, and hot press. Interestingly, addition of Sn/Ge in AgSbTe2 extended the solubility limit up to ∼30% and hence suppressed Ag2Te in Ag(1-x)SnxSb(1-y)GeyTe2 compounds and led to enhanced electrical transport. Moreover, electrical and thermal transport properties of AgSbTe2 have been greatly affected by the phase transition of Ag2Te near 425 K. However, high-entropy Ag0.85Sn0.15Sb0.85Ge0.15Te2 compound results in a stabilized rock-salt structure and presents a high power factor of ∼10.8 μW cm-1 K-2 at 757 K. Besides, density functional theory reveals that available multivalence bands in Sn/Ge-doped AgSbTe2 lead to reduction in energy offsets. Meanwhile, a variety of defects appear in the Ag0.85Sn0.15Sb0.85Ge0.15Te2 sample due to entropy change, and thus lattice thermal conductivity decreases. Ultimately, a high figure of merit of ∼1.5 is attained at 757 K. This work demonstrates a roadmap for other group IV-VI materials so that the high-entropy approach may inhibit the impurity phases with extended solubility limit and result in high thermoelectric performance.
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Affiliation(s)
- Abdul Basit
- Department of Applied Physics, The Hong Kong Polytechnic University, Kowloon 999077, Hong Kong
| | - Tanveer Hussain
- Department of Physics, Southern University of Science and Technology, Shenzhen 518055, China
| | - Xin Li
- State Key Laboratory of Material Processing and Die & Mould Technology, Huazhong University of Science and Technology, Wuhan 430074, P. R. China
| | - Jiwu Xin
- School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore 639798, Singapore
| | - Bin Zhang
- Center for Quantum Materials & Devices and College of Physics, Chongqing University, Chongqing 401331, P. R. China
| | - Xiaoyuan Zhou
- Center for Quantum Materials & Devices and College of Physics, Chongqing University, Chongqing 401331, P. R. China
| | - Guoyu Wang
- Center for Quantum Materials & Devices and College of Physics, Chongqing University, Chongqing 401331, P. R. China
| | - Ji-Yan Dai
- Department of Applied Physics, The Hong Kong Polytechnic University, Kowloon 999077, Hong Kong
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5
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Wu Y, Chen Y, Fang Z, Ding Y, Li Q, Xue K, Shao H, Zhang H, Zhou L. Ultralow Lattice Thermal Transport and Considerable Wave-like Phonon Tunneling in Chalcogenide Perovskite BaZrS 3. J Phys Chem Lett 2023; 14:11465-11473. [PMID: 38085873 DOI: 10.1021/acs.jpclett.3c02940] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/22/2023]
Abstract
Chalcogenide perovskites provide a promising avenue for nontoxic, stable thermoelectric materials. Here, the thermal transport and thermoelectric properties of BaZrS3 as a typical orthorhombic perovskite are investigated. An extremely low lattice thermal conductivity κL of 1.84 W/mK at 300 K is revealed for BaZrS3, due to the softening effect of Ba atoms on the lattice and the strong anharmonicity caused by the twisted structure. We demonstrate that coherence contributions to κL, arising from wave-like phonon tunneling, lead to an 18% thermal transport contribution at 300 K. The increasing temperature softens the phonons, thus reducing the group velocity of materials and increasing the scattering phase space. However, it simultaneously reduces the anharmonicity, which is dominant in BaZrS3 and ultimately improves the particle-like thermal transport. In addition, via replacement of the S atom with Se- and Ti-alloying strategy, the ZT value of BaZrS3 is significantly increased from 0.58 to 0.91 at 500 K, making it an important candidate for thermoelectric applications.
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Affiliation(s)
- Yu Wu
- Yangtze Delta Region Institute (Huzhou), University of Electronic Science and Technology of China, Huzhou 313001, China
| | - Ying Chen
- School of Information Science and Technology, Fudan University, Shanghai 200433, China
| | - Zhenxing Fang
- School of Physics and Electronic Science, Zunyi Normal University, Zunyi 563006, Guizhou, China
| | - Yimin Ding
- Yangtze Delta Region Institute (Huzhou), University of Electronic Science and Technology of China, Huzhou 313001, China
| | - Qiaoqiao Li
- School of Physics, University of Electronic Science and Technology of China, Chengdu 610054, China
| | - Kui Xue
- School of Physics, University of Electronic Science and Technology of China, Chengdu 610054, China
| | - Hezhu Shao
- College of Electrical and Electronic Engineering, Wenzhou University, Wenzhou 325035, China
| | - Hao Zhang
- School of Information Science and Technology, Fudan University, Shanghai 200433, China
- Yiwu Research Institute of Fudan University, Chengbei Road, Yiwu City, Zhejiang 322000, China
| | - Liujiang Zhou
- Yangtze Delta Region Institute (Huzhou), University of Electronic Science and Technology of China, Huzhou 313001, China
- School of Physics, University of Electronic Science and Technology of China, Chengdu 610054, China
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6
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Bhui A, Das S, Arora R, Bhat U, Dutta P, Ghosh T, Pathak R, Datta R, Waghmare UV, Biswas K. Hg Doping Induced Reduction in Structural Disorder Enhances the Thermoelectric Performance in AgSbTe 2. J Am Chem Soc 2023; 145:25392-25400. [PMID: 37942795 DOI: 10.1021/jacs.3c09643] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/10/2023]
Abstract
Defect engineering, achieved by precise tuning of the atomic disorder within crystalline solids, forms a cornerstone of structural chemistry. This nuanced approach holds the potential to significantly augment thermoelectric performance by synergistically manipulating the interplay between the charge carrier and lattice dynamics. Here, the current study presents a distinctive investigation wherein the introduction of Hg doping into AgSbTe2 serves to partially curtail structural disorder. This strategic maneuver mitigates potential fluctuations originating from pronounced charge and size disparities between Ag+ and Sb3+, positioned in octahedral sites within the rock salt structure. Hg doping significantly improves the phase stability of AgSbTe2 by restricting the congenital emergence of the Ag2Te minor secondary phase and promotes partial atomic ordering in the cation sublattice. Reduction in atomic disorder coalesced with a complementary modification of electronic structure by Hg doping results in increased carrier mobility. The formation of nanoscale superstructure with sizes (2-5 nm) of the order of phonon mean free path in AgSbTe2 is further promoted by reduced partial disorder, causes enhanced scattering of heat-carrying phonons, and results in a glass-like ultralow lattice thermal conductivity (∼0.32 W m-1 K-1 at 297 K). Cumulatively, the multifaceted influence of Hg doping, in conjunction with the consequential reduction in disorder, allows achieving a high thermoelectric figure-of-merit, zT, of ∼2.4 at ∼570 K. This result defies conventional paradigms that prioritize increased disorder for optimizing zT.
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Affiliation(s)
- Animesh Bhui
- New Chemistry Unit, International Centre for Materials Science and School of Advanced Materials, Jawaharlal Nehru Centre for Advanced Scientific Research (JNCASR), Jakkur P.O., Bangalore 560064, India
| | - Subarna Das
- New Chemistry Unit, International Centre for Materials Science and School of Advanced Materials, Jawaharlal Nehru Centre for Advanced Scientific Research (JNCASR), Jakkur P.O., Bangalore 560064, India
| | - Raagya Arora
- Theoretical Sciences Unit and School of Advanced Materials, Jawaharlal Nehru Centre for Advanced Scientific Research (JNCASR), Jakkur P.O., Bangalore 560064, India
| | - Usha Bhat
- Chemistry and Physics of Materials Unit, International Centre for Materials Science and School of Advanced Materials, Jawaharlal Nehru Centre for Advanced Scientific Research (JNCASR), Jakkur P.O., Bangalore 560064, India
| | - Prabir Dutta
- New Chemistry Unit, International Centre for Materials Science and School of Advanced Materials, Jawaharlal Nehru Centre for Advanced Scientific Research (JNCASR), Jakkur P.O., Bangalore 560064, India
| | - Tanmoy Ghosh
- New Chemistry Unit, International Centre for Materials Science and School of Advanced Materials, Jawaharlal Nehru Centre for Advanced Scientific Research (JNCASR), Jakkur P.O., Bangalore 560064, India
| | - Riddhimoy Pathak
- New Chemistry Unit, International Centre for Materials Science and School of Advanced Materials, Jawaharlal Nehru Centre for Advanced Scientific Research (JNCASR), Jakkur P.O., Bangalore 560064, India
| | - Ranjan Datta
- Chemistry and Physics of Materials Unit, International Centre for Materials Science and School of Advanced Materials, Jawaharlal Nehru Centre for Advanced Scientific Research (JNCASR), Jakkur P.O., Bangalore 560064, India
| | - Umesh V Waghmare
- Theoretical Sciences Unit and School of Advanced Materials, Jawaharlal Nehru Centre for Advanced Scientific Research (JNCASR), Jakkur P.O., Bangalore 560064, India
| | - Kanishka Biswas
- New Chemistry Unit, International Centre for Materials Science and School of Advanced Materials, Jawaharlal Nehru Centre for Advanced Scientific Research (JNCASR), Jakkur P.O., Bangalore 560064, India
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7
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Zhao L, Han H, Lu Z, Yang J, Wu X, Ge B, Yu L, Shi Z, Karami AM, Dong S, Hussain S, Qiao G, Xu J. Realizing the Ultralow Lattice Thermal Conductivity of Cu 3SbSe 4 Compound via Sulfur Alloying Effect. NANOMATERIALS (BASEL, SWITZERLAND) 2023; 13:2730. [PMID: 37836371 PMCID: PMC10574639 DOI: 10.3390/nano13192730] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/13/2023] [Revised: 10/04/2023] [Accepted: 10/06/2023] [Indexed: 10/15/2023]
Abstract
Cu3SbSe4 is a potential p-type thermoelectric material, distinguished by its earth-abundant, inexpensive, innocuous, and environmentally friendly components. Nonetheless, the thermoelectric performance is poor and remains subpar. Herein, the electrical and thermal transport properties of Cu3SbSe4 were synergistically optimized by S alloying. Firstly, S alloying widened the band gap, effectively alleviating the bipolar effect. Additionally, the substitution of S in the lattice significantly increased the carrier effective mass, leading to a large Seebeck coefficient of ~730 μVK-1. Moreover, S alloying yielded point defect and Umklapp scattering to significantly depress the lattice thermal conductivity, and thus brought about an ultralow κlat ~0.50 Wm-1K-1 at 673 K in the solid solution. Consequently, multiple effects induced by S alloying enhanced the thermoelectric performance of the Cu3SbSe4-Cu3SbS4 solid solution, resulting in a maximum ZT value of ~0.72 at 673 K for the Cu3SbSe2.8S1.2 sample, which was ~44% higher than that of pristine Cu3SbSe4. This work offers direction on improving the comprehensive TE in solid solutions via elemental alloying.
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Affiliation(s)
- Lijun Zhao
- School of Materials Science and Engineering, Jiangsu University of Science and Technology, Zhenjiang 212100, China
| | - Haiwei Han
- School of Materials Science and Engineering, Jiangsu University of Science and Technology, Zhenjiang 212100, China
| | - Zhengping Lu
- School of Materials Science and Engineering, Jiangsu University of Science and Technology, Zhenjiang 212100, China
| | - Jian Yang
- School of Materials Science and Engineering, Jiangsu University, Zhenjiang 212013, China
| | - Xinmeng Wu
- School of Materials Science and Engineering, Jiangsu University of Science and Technology, Zhenjiang 212100, China
| | - Bangzhi Ge
- School of Materials Science and Engineering, Northwestern Polytechnical University, Xi’an 710072, China
| | - Lihua Yu
- School of Materials Science and Engineering, Jiangsu University of Science and Technology, Zhenjiang 212100, China
| | - Zhongqi Shi
- State Key Laboratory for Mechanical Behavior of Materials, Xi’an Jiaotong University, Xi’an 710049, China
| | - Abdulnasser M. Karami
- Department of Chemistry, College of Science, King Saud University, Riyadh 11451, Saudi Arabia
| | - Songtao Dong
- School of Materials Science and Engineering, Jiangsu University of Science and Technology, Zhenjiang 212100, China
| | - Shahid Hussain
- School of Materials Science and Engineering, Jiangsu University, Zhenjiang 212013, China
| | - Guanjun Qiao
- School of Materials Science and Engineering, Jiangsu University, Zhenjiang 212013, China
| | - Junhua Xu
- School of Materials Science and Engineering, Jiangsu University of Science and Technology, Zhenjiang 212100, China
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8
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Hamill JM, Ismael A, Al-Jobory A, Bennett TLR, Alshahrani M, Wang X, Akers-Douglas M, Wilkinson LA, Robinson BJ, Long NJ, Lambert C, Albrecht T. Quantum Interference and Contact Effects in the Thermoelectric Performance of Anthracene-Based Molecules. THE JOURNAL OF PHYSICAL CHEMISTRY. C, NANOMATERIALS AND INTERFACES 2023; 127:7484-7491. [PMID: 37113454 PMCID: PMC10123663 DOI: 10.1021/acs.jpcc.3c00069] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 01/04/2023] [Revised: 03/30/2023] [Indexed: 06/19/2023]
Abstract
We report on the single-molecule electronic and thermoelectric properties of strategically chosen anthracene-based molecules with anchor groups capable of binding to noble metal substrates, such as gold and platinum. Specifically, we study the effect of different anchor groups, as well as quantum interference, on the electric conductance and the thermopower of gold/single-molecule/gold junctions and generally find good agreement between theory and experiments. All molecular junctions display transport characteristics consistent with coherent transport and a Fermi alignment approximately in the middle of the highest occupied molecular orbital/lowest unoccupied molecular orbital gap. Single-molecule results are in agreement with previously reported thin-film data, further supporting the notion that molecular design considerations may be translated from the single- to many-molecule devices. For combinations of anchor groups where one binds significantly more strongly to the electrodes than the other, the stronger anchor group appears to dominate the thermoelectric behavior of the molecular junction. For other combinations, the choice of electrode material can determine the sign and magnitude of the thermopower. This finding has important implications for the design of thermoelectric generator devices, where both n- and p-type conductors are required for thermoelectric current generation.
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Affiliation(s)
- Joseph M. Hamill
- School
of Chemistry, University of Birmingham, Edgbaston Campus, Birmingham B15 2TT, U.K.
| | - Ali Ismael
- Physics
Department, Lancaster University, Lancaster LA1 4YB, U.K.
| | - Alaa Al-Jobory
- Physics
Department, Lancaster University, Lancaster LA1 4YB, U.K.
- Department
of Physics, College of Science, University
of Anbar, Ramadi 31001, Anbar, Iraq
| | - Troy L. R. Bennett
- Department
of Chemistry, Imperial College London, MSRH, White City, London W12 0BZ, U.K.
| | - Maryam Alshahrani
- Physics
Department, Lancaster University, Lancaster LA1 4YB, U.K.
- Physics
Department, College of Science, University
of Bisha, P.O. Box 344, Bisha 61922, Kingdom of Saudi Arabia
| | - Xintai Wang
- Physics
Department, Lancaster University, Lancaster LA1 4YB, U.K.
- School
of
Information Science and Technology, Dalian
Maritime University, Dalian 116026, China
| | - Maxwell Akers-Douglas
- Department
of Chemistry, Imperial College London, MSRH, White City, London W12 0BZ, U.K.
| | - Luke A. Wilkinson
- Department
of Chemistry, Imperial College London, MSRH, White City, London W12 0BZ, U.K.
| | | | - Nicholas J. Long
- Department
of Chemistry, Imperial College London, MSRH, White City, London W12 0BZ, U.K.
| | - Colin Lambert
- Physics
Department, Lancaster University, Lancaster LA1 4YB, U.K.
| | - Tim Albrecht
- School
of Chemistry, University of Birmingham, Edgbaston Campus, Birmingham B15 2TT, U.K.
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9
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Sousa V, Sarkar A, Lebedev OI, Candolfi C, Lenoir B, Coelho R, Gonçalves AP, Vieira EMF, Alpuim P, Kovnir K, Kolen'ko YV. Large-Scale Colloidal Synthesis of Chalcogenides for Thermoelectric Applications. ACS APPLIED MATERIALS & INTERFACES 2023; 15:15498-15508. [PMID: 36940316 DOI: 10.1021/acsami.2c23247] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/18/2023]
Abstract
A simple and effective preparation of solution-processed chalcogenide thermoelectric materials is described. First, PbTe, PbSe, and SnSe were prepared by gram-scale colloidal synthesis relying on the reaction between metal acetates and diphenyl dichalcogenides in hexadecylamine solvent. The resultant phase-pure chalcogenides consist of highly crystalline and defect-free particles with distinct cubic-, tetrapod-, and rod-like morphologies. The powdered PbTe, PbSe, and SnSe products were subjected to densification by spark plasma sintering (SPS), affording dense pellets of the respective chalcogenides. Scanning electron microscopy shows that the SPS-derived pellets exhibit fine nano-/micro-structures dictated by the original morphology of the key constituting particles, while the powder X-ray diffraction and electron microscopy analyses confirm that the SPS-derived pellets are phase-pure materials, preserving the structure of the colloidal synthesis products. The resultant solution-processed PbTe, PbSe, and SnSe exhibit low thermal conductivity, which might be due to the enhanced phonon scattering developed over fine microstructures. For undoped n-type PbTe and p-type SnSe samples, an expected moderate thermoelectric performance is achieved. In contrast, an outstanding figure-of-merit of 0.73 at 673 K was achieved for undoped n-type PbSe outperforming, the majority of the optimized PbSe-based thermoelectric materials. Overall, our findings facilitate the design of efficient solution-processed chalcogenide thermoelectrics.
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Affiliation(s)
- Viviana Sousa
- Center of Physics of the Universities of Minho and Porto, University of Minho, Braga 4710-057, Portugal
- Nanochemistry Research Group, International Iberian Nanotechnology Laboratory, Braga 4715-330, Portugal
| | - Arka Sarkar
- Department of Chemistry, Iowa State University, Ames, Iowa 50011, United States
- Ames National Laboratory, U.S. Department of Energy, Ames, Iowa 50011, United States
| | - Oleg I Lebedev
- Laboratoire CRISMAT, UMR 6508, CNRS-ENSICAEN, Caen 14050, France
| | - Christophe Candolfi
- Institut Jean Lamour, UMR 7198 CNRS-Université de Lorraine, 2 Allée André Guinier-Campus ARTEM, BP 50840, CEDEX, Nancy 54011, France
| | - Bertrand Lenoir
- Institut Jean Lamour, UMR 7198 CNRS-Université de Lorraine, 2 Allée André Guinier-Campus ARTEM, BP 50840, CEDEX, Nancy 54011, France
| | - Rodrigo Coelho
- Centro de Ciências e Tecnologias Nucleares (C2TN), Departamento de Engenharia e Ciências Nucleares, Instituto Superior Técnico, Universidade de Lisboa, Estrada Nacional 10, Bobadela LRS 2695-066, Portugal
| | - António P Gonçalves
- Centro de Ciências e Tecnologias Nucleares (C2TN), Departamento de Engenharia e Ciências Nucleares, Instituto Superior Técnico, Universidade de Lisboa, Estrada Nacional 10, Bobadela LRS 2695-066, Portugal
| | - Eliana M F Vieira
- CMEMS─UMinho, University of Minho, Guimarães 4800-058, Portugal
- LABBELS─Associate Laboratory, Braga/Guimarães, Portugal
| | - Pedro Alpuim
- Center of Physics of the Universities of Minho and Porto, University of Minho, Braga 4710-057, Portugal
- Nanochemistry Research Group, International Iberian Nanotechnology Laboratory, Braga 4715-330, Portugal
| | - Kirill Kovnir
- Department of Chemistry, Iowa State University, Ames, Iowa 50011, United States
- Ames National Laboratory, U.S. Department of Energy, Ames, Iowa 50011, United States
| | - Yury V Kolen'ko
- Nanochemistry Research Group, International Iberian Nanotechnology Laboratory, Braga 4715-330, Portugal
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10
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Ma X, Shai X, Ding Y, Zheng J, Wang J, Sun J, Li X, Chen W, Wei T, Ren W, Gao L, Deng S, Zeng C. Preparation of Heavily Doped P-Type PbSe with High Thermoelectric Performance by the NaCl Salt-Assisted Approach. Molecules 2023; 28:molecules28062629. [PMID: 36985602 PMCID: PMC10051061 DOI: 10.3390/molecules28062629] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 02/05/2023] [Revised: 03/08/2023] [Accepted: 03/09/2023] [Indexed: 03/15/2023] Open
Abstract
Thermoelectric (TE) technology, which can convert scrap heat into electricity, has attracted considerable attention. However, broader applications of TE are hindered by lacking high-performance thermoelectric materials, which can be effectively progressed by regulating the carrier concentration. In this work, a series of PbSe(NaCl)x (x = 3, 3.5, 4, 4.5) samples were synthesized through the NaCl salt-assisted approach with Na+ and Cl− doped into their lattice. Both theoretical and experimental results demonstrate that manipulating the carrier concentration by adjusting the content of NaCl is conducive to upgrading the electrical transport properties of the materials. The carrier concentration elevated from 2.71 × 1019 cm−3 to 4.16 × 1019 cm−3, and the materials demonstrated a maximum power factor of 2.9 × 10−3 W m−1 K−2. Combined with an ultralow lattice thermal conductivity of 0.7 W m−1 K−1, a high thermoelectric figure of merit (ZT) with 1.26 at 690 K was attained in PbSe(NaCl)4.5. This study provides a guideline for chemical doping to improve the thermoelectric properties of PbSe further and promote its applications.
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Affiliation(s)
- Xinru Ma
- Faculty of Science, Institute of Physical and Engineering Science, Kunming University of Science and Technology, Kunming 650500, China
| | - Xuxia Shai
- Faculty of Science, Institute of Physical and Engineering Science, Kunming University of Science and Technology, Kunming 650500, China
- Correspondence: (X.S.); (Y.D.); (S.D.); (C.Z.)
| | - Yu Ding
- College of Chemistry and Materials Science, Hubei Engineering University, Xiaogan 432000, China
- Nuode New Materials Co., Ltd., Shenzhen 518048, China
- Correspondence: (X.S.); (Y.D.); (S.D.); (C.Z.)
| | - Jie Zheng
- Education Ministry Key Laboratory of Renewable Energy Advanced Materials and Manufacturing Technology, Yunnan Normal University, Kunming 650500, China
| | - Jinsong Wang
- Faculty of Materials Science and Engineering, Kunming University of Science and Technology, Kunming 650093, China
| | - Jiale Sun
- Faculty of Science, Institute of Physical and Engineering Science, Kunming University of Science and Technology, Kunming 650500, China
| | - Xiaorui Li
- Faculty of Science, Institute of Physical and Engineering Science, Kunming University of Science and Technology, Kunming 650500, China
| | - Weitao Chen
- Faculty of Science, Institute of Physical and Engineering Science, Kunming University of Science and Technology, Kunming 650500, China
| | - Tingting Wei
- Faculty of Science, Institute of Physical and Engineering Science, Kunming University of Science and Technology, Kunming 650500, China
| | - Weina Ren
- Faculty of Science, Institute of Physical and Engineering Science, Kunming University of Science and Technology, Kunming 650500, China
| | - Lei Gao
- Faculty of Science, Institute of Physical and Engineering Science, Kunming University of Science and Technology, Kunming 650500, China
| | - Shukang Deng
- Education Ministry Key Laboratory of Renewable Energy Advanced Materials and Manufacturing Technology, Yunnan Normal University, Kunming 650500, China
- Correspondence: (X.S.); (Y.D.); (S.D.); (C.Z.)
| | - Chunhua Zeng
- Faculty of Science, Institute of Physical and Engineering Science, Kunming University of Science and Technology, Kunming 650500, China
- Correspondence: (X.S.); (Y.D.); (S.D.); (C.Z.)
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11
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Wang S, Chang C, Bai S, Qin B, Zhu Y, Zhan S, Zheng J, Tang S, Zhao LD. Fine Tuning of Defects Enables High Carrier Mobility and Enhanced Thermoelectric Performance of n-Type PbTe. CHEMISTRY OF MATERIALS : A PUBLICATION OF THE AMERICAN CHEMICAL SOCIETY 2023; 35:755-763. [PMID: 36711054 PMCID: PMC9878722 DOI: 10.1021/acs.chemmater.2c03542] [Citation(s) in RCA: 1] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/28/2022] [Revised: 12/19/2022] [Indexed: 05/27/2023]
Abstract
High carrier mobility is critical to improving thermoelectric performance over a broad temperature range. However, traditional doping inevitably deteriorates carrier mobility. Herein, we develop a strategy for fine tuning of defects to improve carrier mobility. To begin, n-type PbTe is created by compensating for the intrinsic Pb vacancy in bare PbTe. Excess Pb2+ reduces vacancy scattering, resulting in a high carrier mobility of ∼3400 cm2 V-1 s-1. Then, excess Ag is introduced to compensate for the remaining intrinsic Pb vacancies. We find that excess Ag exhibits a dynamic doping process with increasing temperatures, increasing both the carrier concentration and carrier mobility throughout a wide temperature range; specifically, an ultrahigh carrier mobility ∼7300 cm2 V-1 s-1 is obtained for Pb1.01Te + 0.002Ag at 300 K. Moreover, the dynamic doping-induced high carrier concentration suppresses the bipolar thermal conductivity at high temperatures. The final step is using iodine to optimize the carrier concentration to ∼1019 cm-3. Ultimately, a maximum ZT value of ∼1.5 and a large average ZT ave value of ∼1.0 at 300-773 K are obtained for Pb1.01Te0.998I0.002 + 0.002Ag. These findings demonstrate that fine tuning of defects with <0.5% impurities can remarkably enhance carrier mobility and improve thermoelectric performance.
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Affiliation(s)
- Siqi Wang
- School
of Materials Science and Engineering, Beihang
University, Beijing100191, China
| | - Cheng Chang
- Institute
of Science and Technology Austria, Am Campus 1, 3400Klosterneuburg, Austria
| | - Shulin Bai
- School
of Materials Science and Engineering, Liaoning
Technical University, Fuxin123000, China
| | - Bingchao Qin
- School
of Materials Science and Engineering, Beihang
University, Beijing100191, China
| | - Yingcai Zhu
- School
of Materials Science and Engineering, Beihang
University, Beijing100191, China
| | - Shaoping Zhan
- School
of Materials Science and Engineering, Beihang
University, Beijing100191, China
| | - Junqing Zheng
- School
of Materials Science and Engineering, Beihang
University, Beijing100191, China
| | - Shuwei Tang
- School
of Materials Science and Engineering, Liaoning
Technical University, Fuxin123000, China
| | - Li-Dong Zhao
- School
of Materials Science and Engineering, Beihang
University, Beijing100191, China
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12
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Ge B, Lee H, Huang L, Zhou C, Wei Z, Cai B, Cho S, Li J, Qiao G, Qin X, Shi Z, Chung I. Atomic Level Defect Structure Engineering for Unusually High Average Thermoelectric Figure of Merit in n-Type PbSe Rivalling PbTe. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2022; 9:e2203782. [PMID: 36285809 PMCID: PMC9762289 DOI: 10.1002/advs.202203782] [Citation(s) in RCA: 3] [Impact Index Per Article: 1.5] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 06/30/2022] [Revised: 09/11/2022] [Indexed: 06/16/2023]
Abstract
Realizing high average thermoelectric figure of merit (ZTave ) and power factor (PFave ) has been the utmost task in thermoelectrics. Here the new strategy to independently improve constituent factors in ZT is reported, giving exceptionally high ZTave and PFave in n-type PbSe. The nonstoichiometric, alloyed composition and resulting defect structures in new Pb1+ x Se0.8 Te0.2 (x = 0-0.125) system is key to this achievement. First, incorporating excess Pb unusually increases carrier mobility (µH ) and concentration (nH ) simultaneously in contrast to the general physics rule, thereby raising electrical conductivity (σ). Second, modifying charge scattering mechanism by the authors' synthesis process boosts a magnitude of Seebeck coefficient (S) above theoretical expectations. Detouring the innate inverse proportionality between nH and µH ; and σ and S enables independent control over them and change the typical trend of PF to temperature, giving remarkably high PFave ≈20 µW cm-1 K-2 from 300 to 823 K. The dual incorporation of Te and excess Pb generates unusual antisite Pb at the anionic site and displaced Pb from the ideal position, consequently suppressing lattice thermal conductivity. The best composition exhibits a ZTave of ≈1.2 from 400 to 823 K, one of the highest reported for all n-type PbQ (Q = chalcogens) materials.
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Affiliation(s)
- Bangzhi Ge
- State Key Laboratory for Mechanical Behavior of MaterialsXi'an Jiaotong UniversityXi'an710049China
- School of Chemical and Biological Engineering and Institute of Chemical ProcessesSeoul National UniversitySeoul08826Republic of Korea
| | - Hyungseok Lee
- School of Chemical and Biological Engineering and Institute of Chemical ProcessesSeoul National UniversitySeoul08826Republic of Korea
- Center for Correlated Electron SystemsInstitute for Basic Science (IBS)Seoul08826Republic of Korea
| | - Lulu Huang
- School of Chemical and Biological Engineering and Institute of Chemical ProcessesSeoul National UniversitySeoul08826Republic of Korea
- Key Lab of Photovoltaic and Energy Conservation MaterialsInstitute of Solid State PhysicsHFIPSChinese Academy of SciencesHefei230031China
| | - Chongjian Zhou
- School of Chemical and Biological Engineering and Institute of Chemical ProcessesSeoul National UniversitySeoul08826Republic of Korea
| | - Zhilei Wei
- State Key Laboratory for Mechanical Behavior of MaterialsXi'an Jiaotong UniversityXi'an710049China
| | - Bowen Cai
- State Key Laboratory of New Ceramics and Fine ProcessingSchool of Materials Science and EngineeringTsinghua UniversityBeijing100190China
| | - Sung‐Pyo Cho
- National Center for Inter‐University Research FacilitiesSeoul National UniversitySeoul08826Republic of Korea
| | - Jing‐Feng Li
- State Key Laboratory of New Ceramics and Fine ProcessingSchool of Materials Science and EngineeringTsinghua UniversityBeijing100190China
| | - Guanjun Qiao
- State Key Laboratory for Mechanical Behavior of MaterialsXi'an Jiaotong UniversityXi'an710049China
- School of Materials Science and EngineeringJiangsu UniversityZhenjiang212013China
| | - Xiaoying Qin
- Key Lab of Photovoltaic and Energy Conservation MaterialsInstitute of Solid State PhysicsHFIPSChinese Academy of SciencesHefei230031China
| | - Zhongqi Shi
- State Key Laboratory for Mechanical Behavior of MaterialsXi'an Jiaotong UniversityXi'an710049China
| | - In Chung
- School of Chemical and Biological Engineering and Institute of Chemical ProcessesSeoul National UniversitySeoul08826Republic of Korea
- Center for Correlated Electron SystemsInstitute for Basic Science (IBS)Seoul08826Republic of Korea
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13
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Xu L, Xiao Y, Wang S, Cui B, Wu D, Ding X, Zhao LD. Dense dislocations enable high-performance PbSe thermoelectric at low-medium temperatures. Nat Commun 2022; 13:6449. [PMID: 36307447 DOI: 10.1038/s41467-022-34227-3] [Citation(s) in RCA: 5] [Impact Index Per Article: 2.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 09/15/2022] [Accepted: 10/19/2022] [Indexed: 11/09/2022] Open
Abstract
PbSe-based thermoelectric materials exhibit promising ZT values at medium temperature, but its near-room-temperature thermoelectric properties are overlooked, thus restricting its average ZT (ZTave) value at low-medium temperatures. Here, a high ZTave of 0.90 at low temperature (300-573 K) is reported in n-type PbSe-based thermoelectric material (Pb1.02Se0.72Te0.20S0.08-0.3%Cu), resulting in a large ZTave of 0.96 at low-medium temperatures (300-773 K). This high thermoelectric performance stems from its ultralow lattice thermal conductivity caused by dense dislocations through heavy Te/S alloying and Cu interstitial doping. The dislocation density evaluated by modified Williamson-Hall method reaches up to 5.4 × 1016 m-2 in Pb1.02Se0.72Te0.20S0.08-0.3%Cu. Moreover, the microstructure observation further uncloses two kinds of dislocations, namely screw and edge dislocations, with several to hundreds of nanometers scale in length. These dislocations in lattice can strongly intensify phonon scattering to minimize the lattice thermal conductivity and simultaneously maintain high carrier transport. As a result, with the reduced lattice thermal conductivity and optimized power factor in Pb1.02Se0.72Te0.20S0.08-0.3%Cu, its near-room-temperature thermoelectric performance is largely enhanced and exceeds previous PbSe-based thermoelectric materials.
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Affiliation(s)
- Liqing Xu
- State Key Laboratory for Mechanical Behavior of Materials, Xi'an Jiaotong University, 710049, Xi'an, China
| | - Yu Xiao
- State Key Laboratory for Mechanical Behavior of Materials, Xi'an Jiaotong University, 710049, Xi'an, China.
| | - Sining Wang
- School of Materials Science and Engineering, Beihang University, 100191, Beiijng, China
| | - Bo Cui
- Institute of Nuclear Physics and Chemistry, China Academy of Engineering Physics, 621900, Mianyang, China.
| | - Di Wu
- School of Materials Science and Engineering, Shaanxi Normal University, 710049, Xi'an, China
| | - Xiangdong Ding
- State Key Laboratory for Mechanical Behavior of Materials, Xi'an Jiaotong University, 710049, Xi'an, China
| | - Li-Dong Zhao
- School of Materials Science and Engineering, Beihang University, 100191, Beiijng, China.
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14
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Lee YL, Lee H, Kim T, Byun S, Lee YK, Jang S, Chung I, Chang H, Im J. Data-Driven Enhancement of ZT in SnSe-Based Thermoelectric Systems. J Am Chem Soc 2022; 144:13748-13763. [DOI: 10.1021/jacs.2c04741] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/30/2022]
Affiliation(s)
- Yea-Lee Lee
- Korea Research Institute of Chemical Technology (KRICT), Daejeon 34114, Republic of Korea
| | - Hyungseok Lee
- School of Chemical and Biological Engineering, and Institute of Chemical Processes, Seoul National University, Seoul 08826, Republic of Korea
- Center for Correlated Electron Systems, Institute for Basic Science (IBS), Seoul 08826, Republic of Korea
| | - Taeshik Kim
- School of Chemical and Biological Engineering, and Institute of Chemical Processes, Seoul National University, Seoul 08826, Republic of Korea
- Center for Correlated Electron Systems, Institute for Basic Science (IBS), Seoul 08826, Republic of Korea
| | - Sejin Byun
- School of Chemical and Biological Engineering, and Institute of Chemical Processes, Seoul National University, Seoul 08826, Republic of Korea
- Center for Correlated Electron Systems, Institute for Basic Science (IBS), Seoul 08826, Republic of Korea
| | - Yong Kyu Lee
- School of Chemical and Biological Engineering, and Institute of Chemical Processes, Seoul National University, Seoul 08826, Republic of Korea
| | - Seunghun Jang
- Korea Research Institute of Chemical Technology (KRICT), Daejeon 34114, Republic of Korea
| | - In Chung
- School of Chemical and Biological Engineering, and Institute of Chemical Processes, Seoul National University, Seoul 08826, Republic of Korea
- Center for Correlated Electron Systems, Institute for Basic Science (IBS), Seoul 08826, Republic of Korea
| | - Hyunju Chang
- Korea Research Institute of Chemical Technology (KRICT), Daejeon 34114, Republic of Korea
| | - Jino Im
- Korea Research Institute of Chemical Technology (KRICT), Daejeon 34114, Republic of Korea
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15
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Wu M, Zhu L, Liu S, Song M, Zhang F, Liang P, Chao X, Yang Z, He J, Wu D. Significantly Enhanced Thermoelectric Performance Achieved in CuGaTe 2 through Dual-Element Permutations at Cation Sites. ACS APPLIED MATERIALS & INTERFACES 2022; 14:30046-30055. [PMID: 35731615 DOI: 10.1021/acsami.2c07557] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/15/2023]
Abstract
CuGaTe2 has become a widely studied mid-temperature thermoelectric material due to the advantages of large element abundance, proper band gap, and intrinsically high Seebeck coefficient. However, the intrinsically high lattice thermal conductivity and low room-temperature electrical conductivity result in a merely moderate thermoelectric performance for pristine CuGaTe2. In this work, we found that Cu deficiency can significantly reduce the activation energy Ea of Cu vacancies from ∼0.17 eV for pristine CuGaTe2 to nearly zero for Cu0.97GaTe2, thus leading to dramatic improvements in hole concentration and power factor. More remarkably, element permutations (Ag/Cu and In/Ga) at both cation sites can effectively reduce the lattice thermal conductivity at the entire testing temperatures by producing intensive atomic-scale mass and strain fluctuations. Eventually, an ultrahigh peak ZTmax value of ∼1.5 at 873 K is achieved in the composition of Cu0.72Ag0.25Ga0.6In0.4Te2, while a large average ZTavg value of ∼0.7 (323-873 K) is obtained in the Cu0.67Ag0.3Ga0.6In0.4Te2 sample, both of which are significant improvements over pristine CuGaTe2.
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Affiliation(s)
- Mengyue Wu
- Key Laboratory for Macromolecular Science of Shaanxi Province, School of Materials Science and Engineering, Shaanxi Normal University, Xi'an 710119, China
| | - Lujun Zhu
- School of Physics and Information Technology, Shaanxi Normal University, Xi'an 710119, China
| | - Shixuan Liu
- Department of Physics, Southern University of Science and Technology, Shenzhen 518055, China
| | - Mingzhen Song
- Key Laboratory for Macromolecular Science of Shaanxi Province, School of Materials Science and Engineering, Shaanxi Normal University, Xi'an 710119, China
| | - Fudong Zhang
- Key Laboratory for Macromolecular Science of Shaanxi Province, School of Materials Science and Engineering, Shaanxi Normal University, Xi'an 710119, China
| | - Pengfei Liang
- School of Physics and Information Technology, Shaanxi Normal University, Xi'an 710119, China
| | - Xiaolian Chao
- Key Laboratory for Macromolecular Science of Shaanxi Province, School of Materials Science and Engineering, Shaanxi Normal University, Xi'an 710119, China
| | - Zupei Yang
- Key Laboratory for Macromolecular Science of Shaanxi Province, School of Materials Science and Engineering, Shaanxi Normal University, Xi'an 710119, China
| | - Jiaqing He
- Department of Physics, Southern University of Science and Technology, Shenzhen 518055, China
| | - Di Wu
- Key Laboratory for Macromolecular Science of Shaanxi Province, School of Materials Science and Engineering, Shaanxi Normal University, Xi'an 710119, China
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16
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Xiong Y, Jin Y, Deng T, Mei K, Qiu P, Xi L, Zhou Z, Yang J, Shi X, Chen L. High-Throughput Screening for Thermoelectric Semiconductors with Desired Conduction Types by Energy Positions of Band Edges. J Am Chem Soc 2022; 144:8030-8037. [PMID: 35446042 DOI: 10.1021/jacs.1c13713] [Citation(s) in RCA: 5] [Impact Index Per Article: 2.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 01/20/2023]
Abstract
The conduction type of semiconductors is vitally important in many fields (e.g., photovoltaics, transistors, and thermoelectrics), but so far, there is no effective and simple indicator to quickly judge or predict the conduction type of various semiconductors. In this work, based on the relationship between the formation energy of charged defect and the Fermi level, we propose a simple and low-cost strategy for high-throughput screening the potential n-type or p-type semiconductors from the material database by using energy positions of band edges as indicators. As a case study, we validate this strategy in searching potential n-type thermoelectric materials from copper (Cu)-containing metal chalcogenides. A new promising thermoelectric material, CuIn5Se8, with potential intrinsic n-type conduction, is successfully screened from 407 Cu-containing metal chalcogenides and validated in the subsequent experiments. Upon doping iodine in CuIn5Se8, a peak thermoelectric figure of merit zT of 0.84 is obtained at 850 K. Beyond thermoelectrics, the strategy proposed in this study also sheds light on the new material development with desired conduction types in photovoltaics, transistors, and other fields.
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Affiliation(s)
- Yifei Xiong
- State Key Laboratory of High Performance Ceramics and Superfine Microstructure, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 200050, China.,Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Yeqing Jin
- Materials Genome Institute, Shanghai University, Shanghai 200444, China
| | - Tingting Deng
- School of Chemistry and Materials Science, Hangzhou Institute for Advanced Study, University of Chinese Academy of Sciences, Hangzhou 310024, China
| | - Kaili Mei
- State Key Laboratory of High Performance Ceramics and Superfine Microstructure, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 200050, China
| | - Pengfei Qiu
- State Key Laboratory of High Performance Ceramics and Superfine Microstructure, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 200050, China.,School of Chemistry and Materials Science, Hangzhou Institute for Advanced Study, University of Chinese Academy of Sciences, Hangzhou 310024, China
| | - Lili Xi
- Materials Genome Institute, Shanghai University, Shanghai 200444, China
| | - Zhengyang Zhou
- State Key Laboratory of High Performance Ceramics and Superfine Microstructure, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 200050, China
| | - Jiong Yang
- Materials Genome Institute, Shanghai University, Shanghai 200444, China.,Zhejiang Laboratory, Hangzhou, Zhejiang 311100, China
| | - Xun Shi
- State Key Laboratory of High Performance Ceramics and Superfine Microstructure, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 200050, China.,Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Lidong Chen
- State Key Laboratory of High Performance Ceramics and Superfine Microstructure, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 200050, China.,Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
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17
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Li C, Song H, Dai Z, Zhao Z, Liu C, Yang H, Cui C, Miao L. High Thermoelectric Performance Achieved in Sb-Doped GeTe by Manipulating Carrier Concentration and Nanoscale Twin Grains. MATERIALS 2022; 15:ma15020406. [PMID: 35057127 PMCID: PMC8777978 DOI: 10.3390/ma15020406] [Citation(s) in RCA: 2] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 10/23/2021] [Revised: 12/19/2021] [Accepted: 12/20/2021] [Indexed: 11/16/2022]
Abstract
Lead-free and eco-friendly GeTe shows promising mid-temperature thermoelectric applications. However, a low Seebeck coefficient due to its intrinsically high hole concentration induced by Ge vacancies, and a relatively high thermal conductivity result in inferior thermoelectric performance in pristine GeTe. Extrinsic dopants such as Sb, Bi, and Y could play a crucial role in regulating the hole concentration of GeTe because of their different valence states as cations and high solubility in GeTe. Here we investigate the thermoelectric performance of GeTe upon Sb doping, and demonstrate a high maximum zT value up to 1.88 in Ge0.90Sb0.10Te as a result of the significant suppression in thermal conductivity while maintaining a high power factor. The maintained high power factor is due to the markable enhancement in the Seebeck coefficient, which could be attributed to the significant suppression of hole concentration and the valence band convergence upon Sb doping, while the low thermal conductivity stems from the suppression of electronic thermal conductivity due to the increase in electrical resistivity and the lowering of lattice thermal conductivity through strengthening the phonon scattering by lattice distortion, dislocations, and twin boundaries. The excellent thermoelectric performance of Ge0.90Sb0.10Te shows good reproducibility and thermal stability. This work confirms that Ge0.90Sb0.10Te is a superior thermoelectric material for practical application.
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Affiliation(s)
- Chao Li
- School of Electromechanical Engineering, Guangdong University of Technology, Guangzhou 510006, China
- Ji Hua Laboratory, Foshan 528299, China
- The Fifth Electronics Research Institute of Ministry of Industry and Information Technology, Guangzhou 510006, China; (Z.D.); (Z.Z.)
- Correspondence: (C.L.); (H.S.); (H.Y.); (C.C.); (L.M.)
| | - Haili Song
- Key Laboratory of Bioinorganic and Synthetic Chemistry of Ministry of Education, School of Chemistry, Sun Yat-Sen University, Guangzhou 510275, China
- Correspondence: (C.L.); (H.S.); (H.Y.); (C.C.); (L.M.)
| | - Zongbei Dai
- The Fifth Electronics Research Institute of Ministry of Industry and Information Technology, Guangzhou 510006, China; (Z.D.); (Z.Z.)
| | - Zhenbo Zhao
- The Fifth Electronics Research Institute of Ministry of Industry and Information Technology, Guangzhou 510006, China; (Z.D.); (Z.Z.)
| | - Chengyan Liu
- Guangxi Key Laboratory of Information Material, Guangxi Collaborative Innovation Center of Structure and Property for New Energy and Materials, School of Material Science and Engineering, Guilin University of Electronic Technology, Guilin 541004, China;
| | - Hengquan Yang
- Jiangsu Key Laboratory of Modern Measurement Technology and Intelligent Systems, School of Physics and Electronic & Electrical Engineering, Huaiyin Normal University, Huai’an 223300, China
- Correspondence: (C.L.); (H.S.); (H.Y.); (C.C.); (L.M.)
| | - Chengqiang Cui
- School of Electromechanical Engineering, Guangdong University of Technology, Guangzhou 510006, China
- Ji Hua Laboratory, Foshan 528299, China
- Correspondence: (C.L.); (H.S.); (H.Y.); (C.C.); (L.M.)
| | - Lei Miao
- Guangxi Key Laboratory of Information Material, Guangxi Collaborative Innovation Center of Structure and Property for New Energy and Materials, School of Material Science and Engineering, Guilin University of Electronic Technology, Guilin 541004, China;
- SIT Research Laboratories, Innovative Global Program, Department of Materials Science and Engineering, Faculty of Engineering, Shibaura Institute of Technology, Tokyo 135-8548, Japan
- Correspondence: (C.L.); (H.S.); (H.Y.); (C.C.); (L.M.)
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18
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Li XG, Liu WD, Li SM, Li D, Zhu JX, Feng ZY, Yang B, Zhong H, Shi XL, Chen ZG. Ce Filling Limit and Its Influence on Thermoelectric Performance of Fe 3CoSb 12-Based Skutterudite Grown by a Temperature Gradient Zone Melting Method. MATERIALS (BASEL, SWITZERLAND) 2021; 14:6810. [PMID: 34832212 PMCID: PMC8620759 DOI: 10.3390/ma14226810] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 09/25/2021] [Revised: 11/05/2021] [Accepted: 11/09/2021] [Indexed: 11/21/2022]
Abstract
CoSb3-based skutterudite is a promising mid-temperature thermoelectric material. However, the high lattice thermal conductivity limits its further application. Filling is one of the most effective methods to reduce the lattice thermal conductivity. In this study, we investigate the Ce filling limit and its influence on thermoelectric properties of p-type Fe3CoSb12-based skutterudites grown by a temperature gradient zone melting (TGZM) method. Crystal structure and composition characterization suggests that a maximum filling fraction of Ce reaches 0.73 in a composition of Ce0.73Fe2.73Co1.18Sb12 prepared by the TGZM method. The Ce filling reduces the carrier concentration to 1.03 × 1020 cm-3 in the Ce1.25Fe3CoSb12, leading to an increased Seebeck coefficient. Density functional theory (DFT) calculation indicates that the Ce-filling introduces an impurity level near the Fermi level. Moreover, the rattling effect of the Ce fillers strengthens the short-wavelength phonon scattering and reduces the lattice thermal conductivity to 0.91 W m-1 K-1. These effects induce a maximum Seebeck coefficient of 168 μV K-1 and a lowest κ of 1.52 W m-1 K-1 at 693 K in the Ce1.25Fe3CoSb12, leading to a peak zT value of 0.65, which is 9 times higher than that of the unfilled Fe3CoSb12.
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Affiliation(s)
- Xu-Guang Li
- State Key Laboratory of Solidification Processing, Northwestern Polytechnical University, Xi’an 710072, China; (X.-G.L.); (D.L.); (J.-X.Z.); (Z.-Y.F.); (B.Y.); (H.Z.)
| | - Wei-Di Liu
- Australian Institute of Bioengineering and Nanotechnology, The University of Queensland, Brisbane, QLD 4072, Australia;
- Centre for Future Materials, University of Southern Queensland, Brisbane, QLD 4300, Australia;
| | - Shuang-Ming Li
- State Key Laboratory of Solidification Processing, Northwestern Polytechnical University, Xi’an 710072, China; (X.-G.L.); (D.L.); (J.-X.Z.); (Z.-Y.F.); (B.Y.); (H.Z.)
| | - Dou Li
- State Key Laboratory of Solidification Processing, Northwestern Polytechnical University, Xi’an 710072, China; (X.-G.L.); (D.L.); (J.-X.Z.); (Z.-Y.F.); (B.Y.); (H.Z.)
| | - Jia-Xi Zhu
- State Key Laboratory of Solidification Processing, Northwestern Polytechnical University, Xi’an 710072, China; (X.-G.L.); (D.L.); (J.-X.Z.); (Z.-Y.F.); (B.Y.); (H.Z.)
| | - Zhen-Yu Feng
- State Key Laboratory of Solidification Processing, Northwestern Polytechnical University, Xi’an 710072, China; (X.-G.L.); (D.L.); (J.-X.Z.); (Z.-Y.F.); (B.Y.); (H.Z.)
| | - Bin Yang
- State Key Laboratory of Solidification Processing, Northwestern Polytechnical University, Xi’an 710072, China; (X.-G.L.); (D.L.); (J.-X.Z.); (Z.-Y.F.); (B.Y.); (H.Z.)
| | - Hong Zhong
- State Key Laboratory of Solidification Processing, Northwestern Polytechnical University, Xi’an 710072, China; (X.-G.L.); (D.L.); (J.-X.Z.); (Z.-Y.F.); (B.Y.); (H.Z.)
| | - Xiao-Lei Shi
- Centre for Future Materials, University of Southern Queensland, Brisbane, QLD 4300, Australia;
- School of Mechanical and Mining Engineering, The University of Queensland, Brisbane, QLD 4072, Australia
| | - Zhi-Gang Chen
- Centre for Future Materials, University of Southern Queensland, Brisbane, QLD 4300, Australia;
- School of Mechanical and Mining Engineering, The University of Queensland, Brisbane, QLD 4072, Australia
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Ma N, Li F, Li JG, Liu X, Zhang DB, Li YY, Chen L, Wu LM. Mixed-Valence CsCu 4Se 3: Large Phonon Anharmonicity Driven by the Hierarchy of the Rigid [(Cu +) 4(Se 2-) 2](Se -) Double Anti-CaF 2 Layer and the Soft Cs + Sublattice. J Am Chem Soc 2021; 143:18490-18501. [PMID: 34705460 DOI: 10.1021/jacs.1c07629] [Citation(s) in RCA: 14] [Impact Index Per Article: 4.7] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/30/2022]
Abstract
Crystalline solids that exhibit inherently low lattice thermal conductivity (κlat) have attracted a great deal of attention because they offer the only independent control for pursuing a high thermoelectric figure of merit (ZT). Herein, we report the successful preparation of CsCu4Q3 (Q = S (compound 1), Se (compound 2)) with the aid of a safe and facile boron-chalcogen method. The single-crystal diffraction data confirm the P4/mmm hierarchical structures built up by the mixed-valence [(Cu+)4(Q2-)2](Q-) double anti-CaF2 layer and the NaCl-type Cs+ sublattice involving multiple bonding interactions. The electron-poor compound CsCu4Q3 features Cu-Q antibonding states around EF that facilitates a high σ value of 3100 S/cm in 2 at 323 K. Significantly, the ultralow κlat value of 2, 0.20 W/m/K at 650 K (70% lower than that of Cu2Se), is mainly driven by the vibrational coupling of the rigid double anti-CaF2 layer and the soft NaCl-type sublattice. The hierarchical structure increases the bond multiplicity, which eventually leads to a large phonon anharmonicity, as evidenced by the effective scattering of the low-lying optical phonons to the heat-carrying acoustic phonons. Consequently, the acoustic phonon frequency in 2 drops sharply from 118 cm-1 (of Cu2Se) to 48 cm-1. In addition, the elastic properties indicate that the hierarchical structure largely inhibits the transverse phonon modes, leading to a sound velocity (1571 m/s) and a Debye temperature (189 K) lower than those of Cu2Se (2320 m/s; 292 K).
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Affiliation(s)
- Ni Ma
- Center for Advanced Materials Research, Advanced Institute of Natural Sciences, Beijing Normal University at Zhuhai, Zhuhai 519087, People's Republic of China
| | - Fan Li
- Beijing Key Laboratory of Energy Conversion and Storage Materials, College of Chemistry, Beijing Normal University, Beijing 100875, People's Republic of China
| | - Jian-Gao Li
- College of Nuclear Science and Technology, Beijing Normal University, Beijing 100875, People's Republic of China
| | - Xin Liu
- Beijing Key Laboratory of Energy Conversion and Storage Materials, College of Chemistry, Beijing Normal University, Beijing 100875, People's Republic of China
| | - Dong-Bo Zhang
- College of Nuclear Science and Technology, Beijing Normal University, Beijing 100875, People's Republic of China
| | - Yan-Yan Li
- Center for Advanced Materials Research, Advanced Institute of Natural Sciences, Beijing Normal University at Zhuhai, Zhuhai 519087, People's Republic of China
| | - Ling Chen
- Center for Advanced Materials Research, Advanced Institute of Natural Sciences, Beijing Normal University at Zhuhai, Zhuhai 519087, People's Republic of China.,Beijing Key Laboratory of Energy Conversion and Storage Materials, College of Chemistry, Beijing Normal University, Beijing 100875, People's Republic of China
| | - Li-Ming Wu
- Center for Advanced Materials Research, Advanced Institute of Natural Sciences, Beijing Normal University at Zhuhai, Zhuhai 519087, People's Republic of China.,Beijing Key Laboratory of Energy Conversion and Storage Materials, College of Chemistry, Beijing Normal University, Beijing 100875, People's Republic of China
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20
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Jiao WY, Hu R, Han SH, Luo YF, Yuan HM, Li MK, Liu HJ. Surprisingly good thermoelectric performance of monolayer C 3N. NANOTECHNOLOGY 2021; 33:045401. [PMID: 34653997 DOI: 10.1088/1361-6528/ac302c] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/19/2021] [Accepted: 10/15/2021] [Indexed: 06/13/2023]
Abstract
The rapid emergence of graphene has attracted numerous efforts to explore other two-dimensional materials. Here, we combine first-principles calculations and Boltzmann theory to investigate the structural, electronic, and thermoelectric transport properties of monolayer C3N, which exhibits a honeycomb structure very similar to graphene. It is found that the system is both dynamically and thermally stable even at high temperature. Unlike graphene, the monolayer has an indirect band gap of 0.38 eV and much lower lattice thermal conductivity. Moreover, the system exhibits obviously larger electrical conductivity and Seebeck coefficients for the hole carriers. Consequently, theZTvalue ofp-type C3N can reach 1.4 at 1200 K when a constant relaxation time is predicted by the simple deformation potential theory. However, such a largerZTis reduced to 0.6 if we fully consider the electron-phonon coupling. Even so, the thermoelectric performance of monolayer C3N is still significantly enhanced compared with that of graphene, and is surprisingly good for low-dimensional thermoelectric materials consisting of very light elements.
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Affiliation(s)
- W Y Jiao
- Key Laboratory of Artificial Micro- and Nano-Structures of Ministry of Education and School of Physics and Technology, Wuhan University, Wuhan 430072, People's Republic of China
| | - R Hu
- Key Laboratory of Artificial Micro- and Nano-Structures of Ministry of Education and School of Physics and Technology, Wuhan University, Wuhan 430072, People's Republic of China
| | - S H Han
- Key Laboratory of Artificial Micro- and Nano-Structures of Ministry of Education and School of Physics and Technology, Wuhan University, Wuhan 430072, People's Republic of China
| | - Y F Luo
- Key Laboratory of Artificial Micro- and Nano-Structures of Ministry of Education and School of Physics and Technology, Wuhan University, Wuhan 430072, People's Republic of China
| | - H M Yuan
- Key Laboratory of Artificial Micro- and Nano-Structures of Ministry of Education and School of Physics and Technology, Wuhan University, Wuhan 430072, People's Republic of China
| | - M K Li
- Key Laboratory of Artificial Micro- and Nano-Structures of Ministry of Education and School of Physics and Technology, Wuhan University, Wuhan 430072, People's Republic of China
| | - H J Liu
- Key Laboratory of Artificial Micro- and Nano-Structures of Ministry of Education and School of Physics and Technology, Wuhan University, Wuhan 430072, People's Republic of China
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21
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Zhang C, Geng X, Chen B, Li J, Meledin A, Hu L, Liu F, Shi J, Mayer J, Wuttig M, Cojocaru-Mirédin O, Yu Y. Boron-Mediated Grain Boundary Engineering Enables Simultaneous Improvement of Thermoelectric and Mechanical Properties in N-Type Bi 2 Te 3. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2021; 17:e2104067. [PMID: 34541782 DOI: 10.1002/smll.202104067] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/12/2021] [Revised: 08/20/2021] [Indexed: 06/13/2023]
Abstract
Powder metallurgy introduces small structures of high-density grain boundaries into Bi2 Te3 -based alloys, which promises to enhance their mechanical and thermoelectric performance. However, due to the strong donor-like effect induced by the increased surface, Te vacancies form in the powder-metallurgy process. Hence, the as-sintered n-type Bi2 Te3 -based alloys show a lower figure of merit (ZT) value than their p-type counterparts and the commercial zone-melted (ZM) ingots. Here, boron is added to one-step-sintered n-type Bi2 Te3 -based alloys to inhibit grain growth and to suppress the donor-like effect, simultaneously improving the mechanical and thermoelectric (TE) performance. Due to the alleviated donor-like effect and the carrier mobility maintained in our n-type Bi2 Te2.7 Se0.3 alloys upon the addition of boron, the maximum and average ZT values within 298-473 K can be enhanced to 1.03 and 0.91, respectively, which are even slightly higher than that of n-type ZM ingots. Moreover, the addition of boron greatly improves the mechanical strength such as Vickers hardness and compressive strength due to the synergetic effects of Hall-Petch grain-boundary strengthening and boron dispersion strengthening. This facile and cost-effective grain boundary engineering by adding boron facilitates the practical application of Bi2 Te3 -based alloys and can also be popularized in other thermoelectric materials.
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Affiliation(s)
- Chaohua Zhang
- College of Materials Science and Engineering, Shenzhen Key Laboratory of Special Functional Materials, Shenzhen Engineering Laboratory for Advanced Technology of Ceramics, Guangdong Research Center for Interfacial Engineering of Functional Materials, Institute of Deep Underground Sciences and Green Energy, Shenzhen University, Shenzhen, 518060, P. R. China
| | - Xingjin Geng
- College of Materials Science and Engineering, Shenzhen Key Laboratory of Special Functional Materials, Shenzhen Engineering Laboratory for Advanced Technology of Ceramics, Guangdong Research Center for Interfacial Engineering of Functional Materials, Institute of Deep Underground Sciences and Green Energy, Shenzhen University, Shenzhen, 518060, P. R. China
| | - Bin Chen
- College of Materials Science and Engineering, Shenzhen Key Laboratory of Special Functional Materials, Shenzhen Engineering Laboratory for Advanced Technology of Ceramics, Guangdong Research Center for Interfacial Engineering of Functional Materials, Institute of Deep Underground Sciences and Green Energy, Shenzhen University, Shenzhen, 518060, P. R. China
| | - Junqin Li
- College of Materials Science and Engineering, Shenzhen Key Laboratory of Special Functional Materials, Shenzhen Engineering Laboratory for Advanced Technology of Ceramics, Guangdong Research Center for Interfacial Engineering of Functional Materials, Institute of Deep Underground Sciences and Green Energy, Shenzhen University, Shenzhen, 518060, P. R. China
| | - Alexander Meledin
- Central Facility for Electron Microscopy (GFE), RWTH Aachen University, Ahornstr. 55, D-52074, Aachen, Germany
| | - Lipeng Hu
- College of Materials Science and Engineering, Shenzhen Key Laboratory of Special Functional Materials, Shenzhen Engineering Laboratory for Advanced Technology of Ceramics, Guangdong Research Center for Interfacial Engineering of Functional Materials, Institute of Deep Underground Sciences and Green Energy, Shenzhen University, Shenzhen, 518060, P. R. China
| | - Fusheng Liu
- College of Materials Science and Engineering, Shenzhen Key Laboratory of Special Functional Materials, Shenzhen Engineering Laboratory for Advanced Technology of Ceramics, Guangdong Research Center for Interfacial Engineering of Functional Materials, Institute of Deep Underground Sciences and Green Energy, Shenzhen University, Shenzhen, 518060, P. R. China
| | - Jigui Shi
- College of Materials Science and Engineering, Shenzhen Key Laboratory of Special Functional Materials, Shenzhen Engineering Laboratory for Advanced Technology of Ceramics, Guangdong Research Center for Interfacial Engineering of Functional Materials, Institute of Deep Underground Sciences and Green Energy, Shenzhen University, Shenzhen, 518060, P. R. China
| | - Joachim Mayer
- Central Facility for Electron Microscopy (GFE), RWTH Aachen University, Ahornstr. 55, D-52074, Aachen, Germany
- Ernst Ruska-Centre for Microscopy and Spectroscopy with Electrons (ER-C 2), Forschungszentrum Jülich, D-52425, Jülich, Germany
| | - Matthias Wuttig
- Institute of Physics IA, RWTH Aachen University, 52056, Aachen, Germany
- PGI 10 (Green IT), Forschungszentrum Jülich GmbH, 52428, Jülich, Germany
| | | | - Yuan Yu
- Institute of Physics IA, RWTH Aachen University, 52056, Aachen, Germany
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22
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Xie L, He D, He J. SnSe, the rising star thermoelectric material: a new paradigm in atomic blocks, building intriguing physical properties. MATERIALS HORIZONS 2021; 8:1847-1865. [PMID: 34846469 DOI: 10.1039/d1mh00091h] [Citation(s) in RCA: 6] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/13/2023]
Abstract
Thermoelectric (TE) materials, which enable direct energy conversion between waste heat and electricity, have witnessed enormous and exciting developments over last several decades due to innovative breakthroughs both in materials and the synergistic optimization of structures and properties. Among the promising state-of-the-art materials for next-generation thermoelectrics, tin selenide (SnSe) has attracted rapidly growing research interest for its high TE performance and the intrinsic layered structure that leads to strong anisotropy. Moreover, complex interactions between lattice, charge, and orbital degrees of freedom in SnSe make up a large phase space for the optimization of its TE properties via the simultaneous tuning of structural and chemical features. Various techniques, especially advanced electron microscopy (AEM), have been devoted to exploring these critical multidiscipline correlations between TE properties and microstructures. In this review, we first focus on the intrinsic layered structure as well as the extrinsic structural "imperfectness" of various dimensions in SnSe as studied by AEM. Based on these characterization results, we give a comprehensive discussion on the current understanding of the structure-property relationship. We then point out the challenges and opportunities as provided by modern AEM techniques toward a deeper knowledge of SnSe based on electronic structures and lattice dynamics at the nanometer or even atomic scale, for example, the measurements of local charge and electric field distribution, phonon vibrations, bandgap, valence state, temperature, and resultant TE effects.
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Affiliation(s)
- Lin Xie
- Shenzhen Key Laboratory of Thermoelectric Materials and Department of Physics, Southern University of Science and Technology, Shenzhen, 518055, China.
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23
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Jiang B, Yu Y, Chen H, Cui J, Liu X, Xie L, He J. Entropy engineering promotes thermoelectric performance in p-type chalcogenides. Nat Commun 2021; 12:3234. [PMID: 34050188 PMCID: PMC8163856 DOI: 10.1038/s41467-021-23569-z] [Citation(s) in RCA: 25] [Impact Index Per Article: 8.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 03/18/2021] [Accepted: 05/05/2021] [Indexed: 02/04/2023] Open
Abstract
We demonstrate that the thermoelectric properties of p-type chalcogenides can be effectively improved by band convergence and hierarchical structure based on a high-entropy-stabilized matrix. The band convergence is due to the decreased light and heavy band energy offsets by alloying Cd for an enhanced Seebeck coefficient and electric transport property. Moreover, the hierarchical structure manipulated by entropy engineering introduces all-scale scattering sources for heat-carrying phonons resulting in a very low lattice thermal conductivity. Consequently, a peak zT of 2.0 at 900 K for p-type chalcogenides and a high experimental conversion efficiency of 12% at ΔT = 506 K for the fabricated segmented modules are achieved. This work provides an entropy strategy to form all-scale hierarchical structures employing high-entropy-stabilized matrix. This work will promote real applications of low-cost thermoelectric materials.
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Affiliation(s)
- Binbin Jiang
- Shenzhen Key Laboratory of Thermoelectric Materials, Department of Physics, Southern University of Science and Technology, Shenzhen, China
| | - Yong Yu
- Shenzhen Key Laboratory of Thermoelectric Materials, Department of Physics, Southern University of Science and Technology, Shenzhen, China
| | - Hongyi Chen
- College of Chemistry and Chemical Engineering, Central South University, Changsha, China
| | - Juan Cui
- Shenzhen Key Laboratory of Thermoelectric Materials, Department of Physics, Southern University of Science and Technology, Shenzhen, China
| | - Xixi Liu
- Shenzhen Key Laboratory of Thermoelectric Materials, Department of Physics, Southern University of Science and Technology, Shenzhen, China
| | - Lin Xie
- Shenzhen Key Laboratory of Thermoelectric Materials, Department of Physics, Southern University of Science and Technology, Shenzhen, China
| | - Jiaqing He
- Shenzhen Key Laboratory of Thermoelectric Materials, Department of Physics, Southern University of Science and Technology, Shenzhen, China.
- Guangdong-Hong Kong-Macao Joint Laboratory for Photonic-Thermal-Electrical Energy Materials and Devices, Southern University of Science and Technology, Shenzhen, China.
- Key Laboratory of Energy Conversion and Storage Technologies, Southern University of Science and Technology, Ministry of Education, Shenzhen, China.
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