Tuning p-Si(111) Photovoltage via Molecule|Semiconductor Electronic Coupling

Origins of non-ideal behaviour in voltammetric analysis of redox-active monolayers

Disorder in redox-active monolayers convolutes electrochemical characterization. This disorder can come from pinhole defects, loose packing, heterogeneous distribution of redox-active headgroups, and lateral interactions between immobilized redox-active molecules. Identifying the source of non-ideal behaviour in cyclic voltammograms can be challenging as different types of disorder often cause similar non-ideal cyclic voltammetry behaviour such as peak broadening, large peak-to-peak separation, peak asymmetry and multiple peaks for single redox processes. This Review provides an overview of ideal voltammetric behaviour for redox-active monolayers, common manifestations of disorder on voltammetric responses, common experimental parameters that can be varied to interrogate sources of disorder, and finally, examples of different types of disorder and how they impact electrochemical responses.

Electrochemical Impedance of Well-Passivated Semiconductors Reveals Bandgaps, Fermi Levels, and Interfacial Density of States

For well-passivated semiconductor materials, the density of states (DOS) at the band edge determines the concentration of electrons (or holes) available to participate in photo/electrochemical redox and chemical reactions. Electrochemical impedance enables the characterization of photo-electrode DOS in a functional, in situ, electrochemical environment. However, the in situ electrochemical approach remains underutilized for band structure characterization of inorganic semiconductors. In this work, we demonstrate that the DOS of the well-passivated, highly ordered semiconductors silicon and germanium is directly probed by electrochemical impedance spectroscopy (EIS). More specifically, EIS measurements of the chemical capacitance in contact with electrolyte enable direct analysis of the DOS properties. From the capacitance-potential plot, the following parameters can be extracted: Fermi level, valence band maximum, conduction band minimum, and a quantitative value of the number of states at each potential. This study aims to establish the groundwork for future EIS investigations of electronically modified semiconductor interfaces with covalently bound organic molecules, organometallic catalysts, or more complex biorelated functionalizations.

Semiconductor Band Structure, Symmetry, and Molecular Interface Hybridization for the Chemist

Merging molecular bonding concepts with semiconductor- and materials-based concepts of band structure is challenging due to the mutually exclusive historical development and notations used in those respective fields: symmetry adapted linear combinations (SALCs) and Mulliken terms for molecules, versus k space and Bloch sums for materials. This lack of commonality brings the issue of hybridization (aka electronic coupling) between molecules and materials to the forefront in many aspects of modern chemical research─including nanocrystal properties, solar energy conversion, and molecular computing. It is thus critical to establish a holistic approach to hybridizing orbital (molecule) and plane-wave (semiconductor/material) systems to better describe symmetry-based molecule|material bonding and the corresponding symmetry-adapted molecular orbital (MO) diagrams. Such a unified approach would enable the construction of testable hypotheses about the role of symmetry and electronic structure in determining the extent of electronic coupling between molecular orbitals and semiconductor band structure. This Perspective provides an analysis and compendium of "translations" between the physics and chemistry language of group theory. In this vein, this approach describes the symmetries─and corresponding point groups─that occur in k space along the available descent in symmetry pathways (k space vectors). As a result, chemists may arrive at a more intuitive understanding of the band symmetries of semiconductors, as well as insights into the corresponding algebraic formulations. This analysis can ultimately generate MO diagrams for hybrid molecule|material systems. Lastly, an Outlook provides some context to the application of this analysis to modern problems at the interface of molecular and materials chemistry.

Voltage-Induced Inversion of Band Bending and Photovoltages at Semiconductor/Liquid Interfaces

At semiconductor/liquid interfaces, the surface potential and photovoltages are produced by a combination of band bending and quasi-Fermi-level splitting at the semiconductor surface, which are usually treated in a qualitative fashion. As such, it is important to develop quantitative metrics for the band energies and photovoltaics at these interfaces. Here, we present a spectroscopic method for monitoring the photovoltages produced at semiconductor/liquid junctions. The surface reporter molecule mercaptobenzonitrile (MBN) is functionalized on the photoelectrode surface (p-type silicon) and is measured using in situ surface-enhanced Raman scattering (SERS) spectroscopy with a water immersion lens under electrochemical working conditions. In particular, the vibrational frequency of the C≡N stretch mode (ωCN) around 2225 cm-1 is sensitive to the local electric field in solution at the electrode/electrolyte interface via the vibrational Stark effect. Over the applied potential range from -0.8 to 0.6 V vs Ag/AgCl, we observe ωCN to increase from 2220 to 2229 cm-1 (at low laser power). As the incident laser power is increased from 83.5 μW to 13.3 mW, we observe additional shifts of ΔωCN = ±1 cm-1, corresponding to photovoltages produced at the semiconductor/liquid interface ΔV = ±0.2 V. Based on Mott-Schottky measurements, the flat band potential (FBP) occurs at -0.39 V vs Ag/AgCl. For applied potentials above the FBP, we observe ΔωCN > 0 (i.e., blue-shifts ∼1 cm-1) corresponding to positive photovoltages, whereas for applied potentials below the flat band potential, we observe ΔωCN < 0 (i.e., red-shifts ∼1 cm-1) corresponding to negative photovoltages. These spectroscopic observations reveal voltage-induced changes in the band bending at the semiconductor/liquid junction that, thus far, have been difficult to measure.

Multi-Electron Transfer at H-Terminated p-Si Electrolyte Interfaces: Large Photovoltages under Inversion Conditions

Photovoltages for hydrogen-terminated p-Si(111) in an acetonitrile electrolyte were quantified with methyl viologen [1,1'-(CH₃)₂-4,4'-bipyridinium](PF₆)₂, abbreviated MV²⁺, and [Ru(bpy)₃](PF₆)₂, where bpy is 2,2'-bipyridine, that respectively undergo two and three one-electron transfer reductions. The reduction potentials, E°, of the two MV²⁺ reductions occurred at energies within the forbidden bandgap, while the three [Ru(bpy)₃]²⁺ reductions occurred within the continuum of conduction band states. Bandgap illumination resulted in reduction that was more positive than that measured with a degenerately doped n⁺-Si demonstrative of a photovoltage, V_ph, that increased in the order MV^2+/+ (260 mV) < MV^+/0 (400 mV) < Ru^2+/+ (530 mV) ∼ Ru^+/0 (540 mV) ∼ Ru^0/- (550 mV). Pulsed 532 nm excitation generated electron-hole pairs whose dynamics were nearly constant under depletion conditions and increased markedly as the potential was raised or lowered. A long wavelength absorption feature assigned to conduction band electrons provided additional evidence for the presence of an inversion layer. Collectively, the data reveal that the most optimal photovoltage, as well as the longest electron-hole pair lifetime and the highest surface electron concentration, occurs when E° lies energetically within the unfilled conduction band states where an inversion layer is present. The bell-shaped dependence for electron-hole pair recombination with the surface potential was predicted by the time-honored SRH model, providing a clear indication that this interface provides access to all four bias conditions, i.e., accumulation, flat band, depletion, and inversion. The implications of these findings for photocatalysis applications and solar energy conversion are discussed.

Surface Immobilization of a Re(I) Tricarbonyl Phenanthroline Complex to Si(111) through Sonochemical Hydrosilylation

A sonochemical-based hydrosilylation method was employed to covalently attach a rhenium tricarbonyl phenanthroline complex to silicon(111). fac-Re(5-(p-Styrene)-phen)(CO)₃Cl (5-(p-styrene)-phen = 5-(4-vinylphenyl)-1,10-phenanthroline) was reacted with hydrogen-terminated silicon(111) in an ultrasonic bath to generate a hybrid photoelectrode. Subsequent reaction with 1-hexene enabled functionalization of remaining atop Si sites. Attenuated total reflectance-Fourier transform infrared spectroscopy confirms attachment of the organometallic complex to silicon without degradation of the organometallic core, supporting hydrosilylation as a strategy for installing coordination complexes that retain their molecular integrity. Detection of Re(I) and nitrogen by X-ray photoelectron spectroscopy (XPS) further support immobilization of fac-Re(5-(p-styrene)-phen)(CO)₃Cl. Cyclic voltammetry and electrochemical impedance spectroscopy under white light illumination indicate that fac-Re(5-(p-styrene)-phen)(CO)₃Cl undergoes two electron reductions. Mott-Schottky analysis indicates that the flat band potential is 239 mV more positive for p-Si(111) co-functionalized with both fac-Re(5-(p-styrene)-phen)(CO)₃Cl and 1-hexene than when functionalized with 1-hexene alone. XPS, ultraviolet photoelectron spectroscopy, and Mott-Schottky analysis show that functionalization with fac-Re(5-(p-styrene)-phen)(CO)₃Cl and 1-hexene introduces a negative interfacial dipole, facilitating reductive photoelectrochemistry.

Using Spectator Ligands to Enhance Nanocrystal-to-Molecule Electron Transfer

Semiconductor nanocrystals (NCs) have emerged as promising photocatalysts. However, NCs are often functionalized with complex ligand shells that contain not only charge acceptors but also other "spectator ligands" that control NC solubility and affinity for target reactants. Here, we show that spectator ligands are not passive observers of photoinduced charge transfer but rather play an active role in this process. We find the rate of electron transfer from quantum-confined PbS NCs to perylenediimide acceptors can be varied by over a factor of 4 simply by coordinating cinnamate ligands with distinct dipole moments to NC surfaces. Theoretical calculations indicate this rate variation stems from both ligand-induced changes in the free energy for charge transfer and electrostatic interactions that alter perylenediimide electron acceptor orientation on NC surfaces. Our work shows NC-to-molecule charge transfer can be fine-tuned through ligand shell design, giving researchers an additional handle for enhancing NC photocatalysis.

Realistic Efficiency Limits for Singlet-Fission Silicon Solar Cells

Singlet fission is a carrier multiplication mechanism that could make silicon solar cells much more efficient. The singlet-fission process splits one high-energy spin-singlet exciton into two lower-energy spin-triplet excitons. We calculated the efficiency potential of three technologically relevant singlet-fission silicon solar cell implementations. We assume realistic but optimistic parameters for the singlet-fission material and investigate the effect of singlet energy and entropic gain. If the transfer of triplet excitons occurs via charge transfer, the maximum efficiency is 34.6% at a surprisingly small singlet energy of 1.85 eV. For the Dexter-type triplet energy transfer, the maximum efficiency is 32.9% at a singlet energy of 2.15 eV. For Förster resonance energy transfer (FRET), the triplet excitons are first transferred into a quantum dot, from which they then undergo FRET into silicon. For this transfer mechanism, the maximum efficiency is 28.% at a singlet energy of 2.33 eV. We show that the efficiency gain from singlet fission is larger the more efficient the silicon base cell is, which stands in contrast to tandem perovskite-silicon solar cells.

Design of robust 2,2'-bipyridine ligand linkers for the stable immobilization of molecular catalysts on silicon(111) surfaces

The attachment of the 2,2'-bipyridine (bpy) moieties to the surface of planar silicon(111) (photo)electrodes was investigated using ab initio simulations performed on a new cluster model for methyl-terminated silicon. Density functional theory (B3LYP) with implicit solvation techniques indicated that adventitious chlorine atoms, when present in the organic linker backbone, led to instability at very negative potentials of the surface-modified electrode. In prior experimental work, chlorine atoms were present as a trace surface impurity due to required surface processing chemistry, and thus could plausibly result in the observed surface instability of the linker. Free energy calculations for the Cl-atom release process with model silyl-linker constructs revealed a modest barrier (14.9 kcal mol-1) that decreased as the electrode potential became more negative. A small library of new bpy-derived structures has additionally been explored computationally to identify strategies that could minimize chlorine-induced linker instability. Structures with fluorine substituents are predicted to be more stable than their chlorine analogues, whereas fully non-halogenated structures are predicted to exhibit the highest stability. The behavior of a hydrogen-evolving molecular catalyst Cp*Rh(bpy) (Cp* = pentamethylcyclopentadienyl) immobilized on a silicon(111) cluster was explored theoretically to evaluate differences between the homogeneous and surface-attached behavior of this species in a tautomerization reaction observed under reductive conditions for catalytic H2 evolution. The calculated free energy difference between the tautomers is small, hence the results suggest that use of reductively stable linkers can enable robust attachment of catalysts while maintaining chemical behavior on the electrode similar to that exhibited in homogeneous solution.