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Li H, Zhou Z, Vasenko AS, Chulkov EV, Fang Q, Long R. Formation and Recombination Dynamics of Polarons in Goethite: A Time-Domain Ab Initio Study. J Phys Chem Lett 2024; 15:10018-10025. [PMID: 39320159 DOI: 10.1021/acs.jpclett.4c02493] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 09/26/2024]
Abstract
The temperature and the coordination environment significantly affect polaron dynamics. Using goethite (FeOOH) as a model, our study examines polaron formation and recombination behavior under various conditions, including electron injection, photoexcitation, and heterovalent doping. Ab initio and nonadiabatic molecular dynamics (NAMD) simulations reveal that polaron formation in FeOOH is dependent on temperature via an adiabatic mechanism with higher temperatures leading to shorter formation times. Only electron polarons form in FeOOH, regardless of the formation method. NAMD simulations indicate that photoexcited electron polaron recombination is significantly faster in FeOOH than in Fe2O3. This difference arises from the distinct coordination environments, resulting in higher inelastic charge-phonon scattering and stronger nonadiabatic coupling in FeOOH. Our findings highlight the crucial roles of temperature and coordination environment in polaron dynamics, offering valuable insights for designing materials to optimize carrier dynamics.
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Affiliation(s)
- Hongliang Li
- College of Chemistry, Key Laboratory of Theoretical & Computational Photochemistry of Ministry of Education, Beijing Normal University, Beijing 100875, China
| | - Zhaohui Zhou
- Chemical Engineering and Technology, School of Water and Environment, Chang'an University, Xi'an 710064, China
| | - Andrey S Vasenko
- HSE University, 101000 Moscow, Russia
- Donostia International Physics Center (DIPC), 20018 San Sebastián-Donostia, Euskadi, Spain
| | - Evgueni V Chulkov
- Donostia International Physics Center (DIPC), 20018 San Sebastián-Donostia, Euskadi, Spain
- Centro de Física de Materiales (CFM-MPC), Centro MixtoCSIC-UPV/EHU, 20018 San Sebastián, Euskadi, Spain
| | - Qiu Fang
- College of Chemistry, Key Laboratory of Theoretical & Computational Photochemistry of Ministry of Education, Beijing Normal University, Beijing 100875, China
| | - Run Long
- College of Chemistry, Key Laboratory of Theoretical & Computational Photochemistry of Ministry of Education, Beijing Normal University, Beijing 100875, China
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Lu H, Fang WH, Long R. Nonadiabatic Molecular Dynamics in Momentum Space Beyond Harmonic Approximation: Hot Electron Relaxation in Photoexcited Black Phosphorus. J Am Chem Soc 2024; 146:19547-19554. [PMID: 38976802 DOI: 10.1021/jacs.4c06654] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 07/10/2024]
Abstract
We simulated hot-electron relaxation in black phosphorus using the nonadiabatic molecular dynamics (NA-MD) approach with a non-Condon effect in momentum space beyond the harmonic approximation. By comparing simulations at the Γ point in a large supercell with those using a few k-points in a smaller supercell─while maintaining the same number of electronic states within the same energy range, we demonstrate that both setups yield remarkably consistent energy relaxation times, regardless of the initial state energy. This consistency arises from the complementary effects of supercell size in real space and the number of k-points in the reciprocal space. This finding confirms that simulations at a single k-point in large size supercells are an effective approximation for NA-MD with a non-Condon effect. This approach offers significant advantages for complex photophysics, such as intervalley scattering and indirect bandgap charge recombination, and is particularly suitable for large systems without the need for a harmonic approximation.
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Affiliation(s)
- Haoran Lu
- College of Chemistry, Key Laboratory of Theoretical & Computational Photochemistry of Ministry of Education, Beijing Normal University, Beijing 100875, People's Republic of China
| | - Wei-Hai Fang
- College of Chemistry, Key Laboratory of Theoretical & Computational Photochemistry of Ministry of Education, Beijing Normal University, Beijing 100875, People's Republic of China
| | - Run Long
- College of Chemistry, Key Laboratory of Theoretical & Computational Photochemistry of Ministry of Education, Beijing Normal University, Beijing 100875, People's Republic of China
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Wang Y, Wang G, Wang Y, Zhou L, Kang J, Zheng W, Xiao S, Xing G, He J. Two-Dimensional Molybdenum Boride (MBene) Mo 4/3B 2T x with Broadband and Termination-Dependent Ultrafast Nonlinear Optical Response. J Phys Chem Lett 2024:3461-3469. [PMID: 38512334 DOI: 10.1021/acs.jpclett.3c03493] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 03/22/2024]
Abstract
Two-dimensional molybdenum borides (MBenes) comprise a new class of 2D transition metal borides that exhibit potential photonics applications. Recently, the synthesis of individual single-layer Mo4/3B2Tx (T = O, F, OH) MBene sheets has been realized, which attracted considerable attention in optoelectronics. However, there is still a lack of understanding and regulation of the photophysical processes of Mo4/3B2Tx MBene. Here, we demonstrate that Mo4/3B2Tx MBene exhibits a surface termination-dependent electronic structure, carrier dynamics, and nonlinear optical response over a wide wavelength range (500-1550 nm). As prepared 2D Mo4/3B2F2 MBene possesses a semimetal material property that exhibits a shorter intraband scattering process (<100 ps) and a considerable nonlinear optical response at a broadband cover optical communication C band at 1550 nm. These thrilling results are confirmed theoretically and experimentally. The analysis of these results adds to the regulating and understanding of the basic photophysical processes, which is anticipated to be beneficial for the further design of MBene-based photonics and nanoelectronics devices.
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Affiliation(s)
- Yiduo Wang
- Hunan Key Laboratory of Nanophotonics and Devices, School of Physics and Electronics, Central South University, Changsha 410083, P.R.China
- Hunan Key Laboratory for Super-microstructure and Ultrafast Process, School of Physics and Electronics, Central South University, 932 South Lushan Road, Changsha, Hunan 410083, P.R.China
| | - Gang Wang
- Joint Key Laboratory of the Ministry of Education, Institute of Applied Physics and Materials Engineering, University of Macau, Avenida da Universidade, Taipa, Macao SAR 999078, China
| | - Yingwei Wang
- Hunan Key Laboratory of Nanophotonics and Devices, School of Physics and Electronics, Central South University, Changsha 410083, P.R.China
- Hunan Key Laboratory for Super-microstructure and Ultrafast Process, School of Physics and Electronics, Central South University, 932 South Lushan Road, Changsha, Hunan 410083, P.R.China
| | - Li Zhou
- Hunan Key Laboratory of Nanophotonics and Devices, School of Physics and Electronics, Central South University, Changsha 410083, P.R.China
- Hunan Key Laboratory for Super-microstructure and Ultrafast Process, School of Physics and Electronics, Central South University, 932 South Lushan Road, Changsha, Hunan 410083, P.R.China
| | - Jianlong Kang
- Hunan Key Laboratory of Nanophotonics and Devices, School of Physics and Electronics, Central South University, Changsha 410083, P.R.China
- Hunan Key Laboratory for Super-microstructure and Ultrafast Process, School of Physics and Electronics, Central South University, 932 South Lushan Road, Changsha, Hunan 410083, P.R.China
| | - Wanxin Zheng
- Hunan Key Laboratory of Nanophotonics and Devices, School of Physics and Electronics, Central South University, Changsha 410083, P.R.China
- Hunan Key Laboratory for Super-microstructure and Ultrafast Process, School of Physics and Electronics, Central South University, 932 South Lushan Road, Changsha, Hunan 410083, P.R.China
| | - Si Xiao
- Hunan Key Laboratory of Nanophotonics and Devices, School of Physics and Electronics, Central South University, Changsha 410083, P.R.China
- Hunan Key Laboratory for Super-microstructure and Ultrafast Process, School of Physics and Electronics, Central South University, 932 South Lushan Road, Changsha, Hunan 410083, P.R.China
| | - Guichuan Xing
- Joint Key Laboratory of the Ministry of Education, Institute of Applied Physics and Materials Engineering, University of Macau, Avenida da Universidade, Taipa, Macao SAR 999078, China
| | - Jun He
- Hunan Key Laboratory of Nanophotonics and Devices, School of Physics and Electronics, Central South University, Changsha 410083, P.R.China
- Hunan Key Laboratory for Super-microstructure and Ultrafast Process, School of Physics and Electronics, Central South University, 932 South Lushan Road, Changsha, Hunan 410083, P.R.China
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