Elusive β-Zn8Sb7: A New Zinc Antimonide Thermoelectric

New Trick for an Old Dog: From Prediction to Properties of "Hidden Clathrates" Ba2Zn5As6 and Ba2Zn5Sb6

The zinc-antimony phase space has been heavily investigated due to the structural complexity and abundance of high-performing thermoelectric materials. Consequentially, the desire to use zinc and antimony as framework elements to encage rattling cations and achieve phonon-glass-electron-crystal-type properties has remained an enticing goal with only two alkali metal clathrates to date, Cs₈Zn₁₈Sb₂₈ and K₅₈Zn₁₂₂Sb₂₀₇. Guided by Zintl electron-counting predictions, we explored the Ba-Zn-Pn (Pn = As, Sb) phase space proximal to the expected composition of the type-I clathrate. In situ powder X-ray diffraction studies revealed two "hidden" compounds which can only be synthesized in a narrow temperature range. The ex situ synthesis and crystal growth unveiled that instead of type-I clathrates, compositionally close but structurally different new clathrate-like compounds formed, Ba₂Zn₅As₆ and Ba₂Zn₅Sb₆. These materials crystallize in a unique structure, in the orthorhombic space group Pmna with the Wyckoff sequence i²h⁶gfe. Single-phase synthesis enabled the exploration of their transport properties. Rattling of the Ba cations in oversized cages manifested low thermal conductivity, which, coupled with the high Seebeck coefficients observed, are prerequisites for a promising thermoelectric material. Potential for further optimization of the thermoelectric performance by aliovalent doping was computationally analyzed.

From Three-Dimensional Clathrates to Two-Dimensional Zintl Phases AMSb2 (A = Rb, Cs; M = Ga, In) Composed of Pentagonal M-Sb Rings

Three new antimonide Zintl phases, RbGaSb₂, CsGaSb₂, and CsInSb₂, were discovered during exploration of corresponding A-M-Sb (A = Rb, Cs; M = Ga, In) ternary systems while searching for new clathrates. The AGaSb₂ phases crystallize in the tetragonal space group P4₂/nmc (No. 137) in the LiBS₂ structure type, while CsInSb₂ crystallizes in lower symmetry in the orthorhombic space group Cmce (No. 64) in the KGaSb₂ structure type with additional disorder of one of the Cs sites. The crystal structures of all three reported AMSb₂ compounds are composed of two-dimensional [MSb₂]^- tetrahedral layers separated by Rb⁺ or Cs⁺ cations. [MSb₂]^- layers are built from fused M-Sb pentagons and hexagons, which are also the main structural units for A₈M₂₇Sb₁₉ clathrate cages. The semiconductor nature of AMSb₂ was suggested by band structure calculations and confirmed by transport property characterization. CsGaSb₂ is a rare example of an n-type pnictide Zintl phase. All reported compounds exhibit low thermal conductivity typical for complex antimonides of heavy elements.

How to Look for Compounds: Predictive Screening and in situ Studies in Na-Zn-Bi System

Here, the combination of theoretical computations followed by rapid experimental screening and in situ diffraction studies is demonstrated as a powerful strategy for novel compounds discovery. When applied for the previously “empty” Na−Zn−Bi system, such an approach led to four novel phases. The compositional space of this system was rapidly screened via the hydride route method and the theoretically predicted NaZnBi (PbClF type, P4/nmm) and Na₁₁Zn₂Bi₅ (Na₁₁Cd₂Sb₅ type, P1‾ ) phases were successfully synthesized, while other computationally generated compounds on the list were rejected. In addition, single crystal X‐ray diffraction studies of NaZnBi indicate minor deviations from the stoichiometric 1 : 1 : 1 molar ratio. As a result, two isostructural (PbClF type, P4/nmm) Zn‐deficient phases with similar compositions, but distinctly different unit cell parameters were discovered. The vacancies on Zn sites and unit cell expansion were rationalized from bonding analysis using electronic structure calculations on stoichiometric “NaZnBi”. In‐situ synchrotron powder X‐ray diffraction studies shed light on complex equilibria in the Na−Zn−Bi system at elevated temperatures. In particular, the high‐temperature polymorph HT‐Na₃Bi (BiF₃ type, Fm3‾m) was obtained as a product of Na₁₁Zn₂Bi₅ decomposition above 611 K. HT‐Na₃Bi cannot be stabilized at room temperature by quenching, and this type of structure was earlier observed in the high‐pressure polymorph HP‐Na₃Bi above 0.5 GPa. The aforementioned approach of predictive synthesis can be extended to other multinary systems.

Ternary Zinc Antimonides Unlocked Using Hydride Synthesis

Three new sodium zinc antimonides Na₁₁Zn₂Sb₅, Na₄Zn₉Sb₉, and NaZn₃Sb₃ were synthesized utilizing sodium hydride NaH as a reactive sodium source. In comparison to the synthesis using sodium metal, salt-like NaH can be ball-milled, leading to the easy and uniform mixing of precursors in the desired stoichiometric ratios. Such comprehensive compositional control enables a fast screening of the Na-Zn-Sb system and identification of new compounds, followed by their preparation in bulk with high purity. Na₁₁Zn₂Sb₅ crystallizes in the triclinic P1 space group (No. 2, Z = 2, a = 8.8739(6) Å, b = 10.6407(7) Å, c = 11.4282(8) Å, α = 103.453(2)°, β = 96.997(2)°, γ = 107.517(2)°) and features polyanionic [Zn₂Sb₅]^11- clusters with unusual 3-coordinated Zn atoms. Both Na₄Zn₉Sb₉ (Z = 4, a = 28.4794(4) Å, b = 4.47189(5) Å, c = 17.2704(2) Å, β = 98.3363(6)°) and NaZn₃Sb₃ (Z = 8, a = 32.1790(1) Å, b = 4.51549(1) Å, c = 9.64569(2) Å, β = 98.4618(1)°) crystallize in the monoclinic C2/m space group (No. 12) and have complex new structure types. For both compounds, their frameworks are built from ZnSb₄ distorted tetrahedra, which are linked via edge-, vertex-sharing, or both, while Na cations fill in the framework channels. Due to the complex structures, Na₄Zn₉Sb₉ and NaZn₃Sb₃ compounds exhibit low thermal conductivities (0.97-1.26 W·m^-1 K^-1) at room temperature, positive Seebeck coefficients (19-32 μV/K) suggestive of holes as charge carriers, and semimetallic electrical resistivities (∼1.0-2.3 × 10^-4 Ω·m). Na₄Zn₉Sb₉ and NaZn₃Sb₃ decompose into the equiatomic NaZnSb above ∼800 K, as determined by in situ synchrotron powder X-ray diffraction. The discovery of multiple ternary compounds highlights the importance of judicious choice of the synthetic method.

Structural evolution in thermoelectric zinc antimonide thin films studied by in situ X-ray scattering techniques

Zinc antimonides have been widely studied owing to their outstanding thermoelectric properties. Unlike in the bulk state, where various structurally unknown phases have been identified through their specific physical properties, a number of intermediate phases in the thin-film state remain largely unexplored. Here, in situ X-ray diffraction and X-ray total scattering are combined with in situ measurement of electrical resistivity to monitor the crystallization process of as-deposited amorphous Zn-Sb films during post-deposition annealing. The as-deposited Zn-Sb films undergo a structural evolution from an amorphous phase to an intermediate crystalline phase and finally the ZnSb phase during heat treatment up to 573 K. An intermediate phase (phase B) is identified to be a modified β-Zn8Sb7 phase by refinement of the X-ray diffraction data. Within a certain range of Sb content (∼42-55 at%) in the films, phase B is accompanied by an emerging Sb impurity phase. Lower Sb content leads to smaller amounts of Sb impurity and the formation of phase B at lower temperatures, and phase B is stable at room temperature if the annealing temperature is controlled. Pair distribution function analysis of the amorphous phase shows local ordered units of distorted ZnSb4 tetrahedra, and annealing leads to long-range ordering of these units to form the intermediate phase. A higher formation energy is required when the intermediate phase evolves into the ZnSb phase with a significantly more regular arrangement of ZnSb4 tetrahedra.

First-principles predictions of low lattice thermal conductivity and high thermoelectric performance of AZnSb (A = Rb, Cs)

Here, two compounds, AZnSb (A = Rb, Cs), have been predicted to be potential materials for thermoelectric device applications at high temperatures by using first-principles calculations based on density functional theory (DFT), density functional perturbation theory (DFPT), and Boltzmann transport theory. The layered structure, and presence of heavier elements Rb/Cs and Sb induce high anharmonicity (larger values of mode Grüneisen parameter), low Debye temperature, and intense phonon scattering. Thus, these compounds possess intrinsically low lattice thermal conductivity (κ_l), ∼0.5 W m⁻¹ K⁻¹ on average at 900 K. Highly non-parabolic bands and relatively wide bandgap (∼1.37 and 1.1 eV for RbZnSb and CsZnSb, respectively, by mBJ potential including spin–orbit coupling effect) induce large Seebeck coefficient while highly dispersive and two-fold degenerate bands induce high electrical conductivity. Large power factor and low values of κ_l lead to a high average thermoelectric figure of merit (ZT) of RbZnSb and CsZnSb, reaching 1.22 and 1.1 and 0.87 and 1.14 at 900 K for p-and n-type carriers, respectively.

The layered structure, and presence of heavier elements Rb/Cs and Sb induce high anharmonicity, low Debye temperature, intense phonon scattering, and hence, low lattice thermal conductivity.

Chemically driven superstructural ordering leading to giant unit cells in unconventional clathrates Cs8Zn18Sb28 and Cs8Cd18Sb28

The unconventional clathrates, Cs₈Zn₁₈Sb₂₈ and Cs₈Cd₁₈Sb₂₈, were synthesized and reinvestigated. These clathrates exhibit unique and extensive superstructural ordering of the clathrate-I structure that was not initially reported. Cs₈Cd₁₈Sb₂₈ orders in the Ia3̄d space group (no. 230) with 8 times larger volume of the unit cell in which most framework atoms segregate into distinct Cd and Sb sites. The structure of Cs₈Zn₁₈Sb₂₈ is much more complicated, with an 18-fold increase of unit cell volume accompanied by significant reduction of symmetry down to P2 (no. 3) monoclinic space group. This structure was revealed by a combination of synchrotron X-ray diffraction and electron microscopy techniques. A full solid solution, Cs₈Zn_18−xCd_xSb₂₈, was also synthesized and characterized. These compounds follow Vegard's law in regard to their primitive unit cell sizes and melting points. Variable temperature in situ synchrotron powder X-ray diffraction was used to study the formation and melting of Cs₈Zn₁₈Sb₂₈. Due to the heavy elements comprising clathrate framework and the complex structural ordering, the synthesized clathrates exhibit ultralow thermal conductivities, all under 0.8 W m⁻¹ K⁻¹ at room temperature. Cs₈Zn₉Cd₉Sb₂₈ and Cs₈Zn_4.5Cd_13.5Sb₂₈ both have total thermal conductivities of 0.49 W m⁻¹ K⁻¹ at room temperature, among the lowest reported for any clathrate. Cs₈Zn₁₈Sb₂₈ has typical p-type semiconducting charge transport properties, while the remaining clathrates show unusual n–p transitions or sharp increases of thermopower at low temperatures. Estimations of the bandgaps as activation energy for resistivity dependences show an anomalous widening and then shrinking of the bandgap with increasing Cd-content.

Giant clathrate supercell driven by ordering of Zn/Sb bonding in the framework and Cs-guest vacancies is found in unconventional clathrate Cs₈Zn₁₈Sb₂₈.

Ba2Si3P6: 1D Nonlinear Optical Material with Thermal Barrier Chains

A novel barium silicon phosphide was synthesized and characterized. Ba₂Si₃P₆ crystallizes in the noncentrosymmetric space group Pna2₁ (No. 33) and exhibits a unique bonding connectivity in the Si-P polyanion not found in other compounds. The crystal structure is composed of SiP₄ tetrahedra connected into one-dimensional double-tetrahedra chains through corner sharing, edge sharing, and covalent P-P bonds. Chains are surrounded by Ba cations to achieve an electron balance. The novel compound exhibits semiconducting properties with a calculated bandgap of 1.6 eV and experimental optical bandgap of 1.88 eV. The complex pseudo-one-dimensional structure manifests itself in the transport and optical properties of Ba₂Si₃P₆, demonstrating ultralow thermal conductivity (0.56 W m^-1 K^-1 at 300 K), promising second harmonic generation signal (0.9 × AgGaS₂), as well as high laser damage threshold (1.6 × AgGaS₂, 48.5 MW/cm²) when compared to the benchmark material AgGaS₂. Differential scanning calorimetry reveals that Ba₂Si₃P₆ melts congruently at 1373 K, suggesting that large single crystal growth may be possible.

High-efficiency thermoelectric Ba8Cu14Ge6P26: bridging the gap between tetrel-based and tetrel-free clathrates

Synergy between tetrel- and pnictide-based clathrates: synthesis, crystal structure, and transport properties of a Ba₈Cu₁₄Ge₆P₂₆.

A new type-I clathrate, Ba₈Cu₁₄Ge₆P₂₆, was synthesized by solid-state methods as a polycrystalline powder and grown as a cm-sized single crystal via the vertical Bridgman method. Single-crystal and powder X-ray diffraction show that Ba₈Cu₁₄Ge₆P₂₆ crystallizes in the cubic space group Pm3n (no. 223). Ba₈Cu₁₄Ge₆P₂₆ is the first representative of anionic clathrates whose framework is composed of three atom types of very different chemical natures: a transition metal, tetrel element, and pnicogen. Uniform distribution of the Cu, Ge, and P atoms over the framework sites and the absence of any superstructural or local ordering in Ba₈Cu₁₄Ge₆P₂₆ were confirmed by synchrotron X-ray diffraction, electron diffraction and high-angle annular dark field scanning transmission electron microscopy, and neutron and X-ray pair distribution function analyses. Characterization of the transport properties demonstrate that Ba₈Cu₁₄Ge₆P₂₆ is a p-type semiconductor with an intrinsically low thermal conductivity of 0.72 W m^–1 K^–1 at 812 K. The thermoelectric figure of merit, ZT, for a slice of the Bridgman-grown crystal of Ba₈Cu₁₄Ge₆P₂₆ approaches 0.63 at 812 K due to a high power factor of 5.62 μW cm^–1 K^–2. The thermoelectric efficiency of Ba₈Cu₁₄Ge₆P₂₆ is on par with the best optimized p-type Ge-based clathrates and outperforms the majority of clathrates in the 700–850 K temperature region, including all tetrel-free clathrates. Ba₈Cu₁₄Ge₆P₂₆ expands clathrate chemistry by bridging conventional tetrel-based and tetrel-free clathrates. Advanced transport properties, in combination with earth-abundant framework elements and congruent melting make Ba₈Cu₁₄Ge₆P₂₆ a strong candidate as a novel and efficient thermoelectric material.

Synthesis, Crystal Structure, and Properties of La4Zn7P10 and La4Mg1.5Zn8.5P12

Two new zinc phosphides, La₄Zn₇P₁₀ and La₄Mg_1.5Zn_8.5P₁₂, were synthesized via transport reactions, and their crystal structures were determined by single crystal X-ray diffraction. La₄Zn₇P₁₀ and La₄Mg_1.5Zn_8.5P₁₂ are built from three-dimensional Zn-P and Zn-Mg-P anionic frameworks that encapsulate lanthanum atoms. The anionic framework of La₄Zn₇P₁₀ is constructed from one-dimensional Zn₄P₆, Zn₂P₄, and ZnP₄ chains. The Zn₄P₆ chains are also the main building units in La₄Mg_1.5Zn_8.5P₁₂. In La₄Zn₇P₁₀, the displacement of a zinc atom from the origin of the unit cell causes the Zn4 position to split into two equivalent atomic sites, each with 50% occupancy. The splitting of the atomic position substantially modifies the electronic properties, as suggested by theoretical calculations. The necessity of splitting can be overcome by replacement of zinc with magnesium in La₄Mg_1.5Zn_8.5P₁₂. Investigation of the transport properties of a densified polycrystalline sample of La₄Zn₇P₁₀ demonstrates that it is an n-type semiconductor with a small bandgap of ∼0.04 eV at 300 K. La₄Zn₇P₁₀ also exhibits low thermal conductivity, 1.3 Wm^-1 K^-1 at 300 K, which mainly originates from the lattice thermal conductivity. La₄Zn₇P₁₀ is stable in a sealed evacuated ampule up to 1123 K as revealed by differential scanning calorimetry.

Synthesis, crystal and electronic structures, and physical properties of a new quaternary phosphide Ba4Mg2+δCu12−δP10(0 < δ < 2)

A new quaternary phosphide composed of a Cu–Mg–P framework hosting Ba and Mg cations is synthesized and characterized.

High-pressure single crystal X-ray diffraction study of thermoelectric ZnSb and β-Zn4Sb3

The crystal structures of thermoelectric ZnSb and Zn₄Sb₃ have been studied by high pressure single crystal X-ray diffraction and the pressure behavior is different from thermal response.

Investigation of the bipolar effect in the thermoelectric material CaMg2Bi2 using a first-principles study

An effective carrier concentration n_eff is proposed to evaluate the bipolar effect, and the results show good consistency with measured data.