1
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Tokura Y, Xu S, Yasui K, Nishii Y, Hirano K. Pd-catalysed C-H alkynylation of benzophospholes. Chem Commun (Camb) 2024; 60:2792-2795. [PMID: 38362673 DOI: 10.1039/d3cc05994d] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 02/17/2024]
Abstract
A palladium-catalysed C2-H alkynylation of benzophospholes with alkynyl bromides has been developed to afford the corresponding phosphole-alkyne conjugations in good to high yields. The C-C triple bond as well as terminal alkyne C-H bond in the obtained products is a good synthetic handle for further manipulations, thus giving the versatile π-conjugated benzophosphole derivatives. The optoelectronic properties of the newly synthesized conjugated benzophospholes are also described.
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Affiliation(s)
- Yu Tokura
- Department of Applied Chemistry, Graduate School of Engineering, Osaka University, Suita, Osaka 565-0871, Japan
| | - Shibo Xu
- Innovative Catalysis Science Division, Institute for Open and Transdisciplinary Research Initiatives (ICS-OTRI), Osaka University, Suita, Osaka 565-0871, Japan.
| | - Kosuke Yasui
- Department of Applied Chemistry, Graduate School of Engineering, Osaka University, Suita, Osaka 565-0871, Japan
| | - Yuji Nishii
- Department of Applied Chemistry, Graduate School of Engineering, Osaka University, Suita, Osaka 565-0871, Japan
| | - Koji Hirano
- Department of Applied Chemistry, Graduate School of Engineering, Osaka University, Suita, Osaka 565-0871, Japan
- Innovative Catalysis Science Division, Institute for Open and Transdisciplinary Research Initiatives (ICS-OTRI), Osaka University, Suita, Osaka 565-0871, Japan.
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2
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Pandey A, Chernyshev A, Panthi YR, Zedník J, Šturcová A, Konefał M, Kočková O, Foulger SH, Vohlídal J, Pfleger J. Synapse-Mimicking Memristors Based on 3,6-Di( tpy)-9-Phenylcarbazole Unimer and Its Copolymer with Cobalt(II) Ions. Polymers (Basel) 2024; 16:542. [PMID: 38399920 PMCID: PMC10892321 DOI: 10.3390/polym16040542] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 12/31/2023] [Revised: 02/09/2024] [Accepted: 02/14/2024] [Indexed: 02/25/2024] Open
Abstract
The title compound, unimer U (tpy stands for 2,2':6',2″-terpyridin-4'-yl end-group), by itself shows the memristor effect with a retention time of 18 h and persistence of 11 h. Its coordination copolymer with Co(II) ions, [CoU]n, exhibits multimodal resistance changes similar to the synaptic responses observed in biological systems. More than 320 cycles of potentiation and depression measured in continuous sequence occurred without observing a significant current change, confirming the operational stability and reproducibility of the device based on the [CoU]n polymer. The synaptic effect of a device with an indium tin oxide (ITO)/[CoU]n/top-electrode (TE) configuration is more pronounced for the device with TE = Au compared to devices with TE = Al or Ga. However, the latter TEs provide a cost-effective approach without any significant compromise in device plasticity. The detected changes in the synaptic weight, about 12% for pair-pulse facilitation and 80% for its depression, together with a millisecond trigger and reading pulses that decay exponentially on the time scale typical of neurosynapses, justify the device's ability to learn and memorize. These properties offer potential applications in neuromorphic computation and brain-inspired synaptic devices.
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Affiliation(s)
- Ambika Pandey
- Faculty of Mathematics and Physics, Charles University, Ke Karlovu 3, 121 16 Prague, Czech Republic; (A.P.); (Y.R.P.)
- Institute of Macromolecular Chemistry, Czech Academy of Sciences, Heyrovského nám. 2, 162 00 Prague, Czech Republic; (A.Š.); (M.K.); (O.K.)
| | - Andrei Chernyshev
- Department of Physical and Macromolecular Chemistry, Faculty of Science, Charles University, Albertov 6, 128 00 Prague, Czech Republic; (A.C.); (J.Z.)
| | - Yadu Ram Panthi
- Faculty of Mathematics and Physics, Charles University, Ke Karlovu 3, 121 16 Prague, Czech Republic; (A.P.); (Y.R.P.)
- Institute of Macromolecular Chemistry, Czech Academy of Sciences, Heyrovského nám. 2, 162 00 Prague, Czech Republic; (A.Š.); (M.K.); (O.K.)
| | - Jiří Zedník
- Department of Physical and Macromolecular Chemistry, Faculty of Science, Charles University, Albertov 6, 128 00 Prague, Czech Republic; (A.C.); (J.Z.)
| | - Adriana Šturcová
- Institute of Macromolecular Chemistry, Czech Academy of Sciences, Heyrovského nám. 2, 162 00 Prague, Czech Republic; (A.Š.); (M.K.); (O.K.)
| | - Magdalena Konefał
- Institute of Macromolecular Chemistry, Czech Academy of Sciences, Heyrovského nám. 2, 162 00 Prague, Czech Republic; (A.Š.); (M.K.); (O.K.)
| | - Olga Kočková
- Institute of Macromolecular Chemistry, Czech Academy of Sciences, Heyrovského nám. 2, 162 00 Prague, Czech Republic; (A.Š.); (M.K.); (O.K.)
| | - Stephen H. Foulger
- Center for Optical Materials Science and Engineering Technology (COMSET), Department of Materials Science and Engineering, Clemson University, Clemson, SC 29634, USA;
- Department of Bioengineering, Clemson University, Clemson, SC 29634, USA
| | - Jiří Vohlídal
- Department of Physical and Macromolecular Chemistry, Faculty of Science, Charles University, Albertov 6, 128 00 Prague, Czech Republic; (A.C.); (J.Z.)
| | - Jiří Pfleger
- Institute of Macromolecular Chemistry, Czech Academy of Sciences, Heyrovského nám. 2, 162 00 Prague, Czech Republic; (A.Š.); (M.K.); (O.K.)
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3
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Lin X, Zhou P, Gao Y, Li T, Chen X, Li H, Jiang R, Chen Z, Zheng H. Implementation of Thermal-Triggered Binary-Ternary Switchable Memory Performance in Zn/polysulfide/organic Complex-Based Memorizers by Finely Modulating the S 62- Relaxation. Inorg Chem 2024; 63:775-783. [PMID: 38134353 DOI: 10.1021/acs.inorgchem.3c03787] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/24/2023]
Abstract
Polysulfide-based multilevel memorizers are promising as novel memorizers, in which the occurrence of Sn2- relaxation is key for their multilevel memory. However, the effects of crystal packing and the side group of organic ligands on Sn2- relaxation are still ambiguous. In this work, ionic [Zn(S6)2·Zn2(Bipy)2SO4 (1), Zn(S6)2·Zn(Pmbipy)3 (2)] and neutral [ZnS6(Ombipy) (3), ZnS6(Phen)2 (4)] Zn/polysulfide/organic complexes with different packing modes and structures of organic ligands have been synthesized and were fabricated as memory devices. In both ionic and neutral Zn complexes, the S62- relaxation will be blocked by steric hindrances due to the packing of counter-cations and hydrogen-bond restrictions. Consequently, only the binary memory performances can be seen in FTO/1/Ag, FTO/2/Ag, and FTO/4/Ag, which originate from the more condensed packing of conjugated ligands upon electrical stimulus. Interestingly, FTO/3/Ag illustrates the unique thermally triggered reversible binary-ternary switchable memory performance. In detail, after introducing a methyl group on the 6'-position of bipyridine in ZnS6(Ombipy) (3), the ring-to-chain relaxation of S62- anions at room temperature will be inhibited, but it can happen at a higher temperature of 120 °C, which has been verified by elongated S-S lengths and the strengthened C-H···S hydrogen bond upon heating. The rules drawn in this work will provide a useful guide for the design of stimulus-responsive memorizers that can be applied in special industries such as automobile, oil, and gas industries.
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Affiliation(s)
- Xiaoli Lin
- College of Chemistry, Fuzhou University, Fuzhou, Fujian 350108, China
| | - Panke Zhou
- College of Chemistry, Fuzhou University, Fuzhou, Fujian 350108, China
| | - Yiqun Gao
- College of Chemistry, Fuzhou University, Fuzhou, Fujian 350108, China
| | - Tao Li
- College of Chemistry, Fuzhou University, Fuzhou, Fujian 350108, China
| | - Xiong Chen
- College of Chemistry, Fuzhou University, Fuzhou, Fujian 350108, China
| | - Haohong Li
- College of Chemistry, Fuzhou University, Fuzhou, Fujian 350108, China
| | - Rong Jiang
- College of Chemistry, Fuzhou University, Fuzhou, Fujian 350108, China
| | - Zhirong Chen
- College of Chemistry, Fuzhou University, Fuzhou, Fujian 350108, China
| | - Huidong Zheng
- College of Chemistry, Fuzhou University, Fuzhou, Fujian 350108, China
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4
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Birara S, Saini S, Majumder M, Lama P, Tiwari SP, Metre RK. Design and synthesis of a solution-processed redox-active bis(formazanate) zinc complex for resistive switching applications. Dalton Trans 2023. [PMID: 38009276 DOI: 10.1039/d3dt02809g] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/28/2023]
Abstract
In this paper, we report the synthesis and characterization of a mononuclear zinc complex (1) containing a redox-active bis(4-antipyrinyl) derivative of the 3-cyanoformazanate ligand. Complex 1 was readily obtained by refluxing zinc acetate with 3-cyano-1,5-(4-antipyrinyl)formazan (LH) in a methanolic solution. Single-crystal X-ray diffraction analysis of complex 1 shows that the formazanate ligands bind to the zinc center in a five-member chelate "open" form via the 1- and 4-positions of the 1,2,4,5-tetraazapentadienyl formazanate backbone leading to the formation of the mononuclear bis(formazanate) zinc complex exhibiting a distorted octahedral geometry. We also report the study of resistive-switching random access memory application of this solution-processable bis(formazanate) Zn(II) complex to facilitate the practical implementation of transition metal complex-based molecular memory devices. The complex demonstrated high conductance switching with a large ON-OFF ratio, good stability, and a long retention time. A trap-controlled space charge limited current mechanism is proposed for the observed resistive switching behavior of the device, wherein the role played by the [ZnIIL2] complex that comprises the extended redox-active conjugated ligand backbone is revealed by corroborating electrochemical studies, spectrochemical experiments, and DFT calculations. In addition to providing significant insights into the molecular design of transition metal complexes for memory applications, this study also presents the utilization of ZnIIL2 towards the realization of non-volatile resistive random access memory (RRAM) devices with inorganic/organic hybrid active layers that are highly cost-effective and sustainable. These devices exhibited multilevel switching and low current operation, both of which are desirable for advanced memory applications.
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Affiliation(s)
- Sunita Birara
- Department of Chemistry, Indian Institute of Technology Jodhpur, Rajasthan-342030, India.
| | - Shalu Saini
- Department of Electrical Engineering, Indian Institute of Technology Jodhpur, Rajasthan-342030, India.
| | - Moumita Majumder
- Department of Metallurgical and Materials Engineering, Indian Institute of Technology Jodhpur, Rajasthan-342030, India.
| | - Prem Lama
- CSIR-Indian Institute of Petroleum, Haridwar Road, Mokhampur, Dehradun-248005, India
| | - Shree Prakash Tiwari
- Department of Electrical Engineering, Indian Institute of Technology Jodhpur, Rajasthan-342030, India.
| | - Ramesh K Metre
- Department of Chemistry, Indian Institute of Technology Jodhpur, Rajasthan-342030, India.
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5
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Rath SP, Thompson D, Goswami S, Goswami S. Many-Body Molecular Interactions in a Memristor. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2023; 35:e2204551. [PMID: 36043246 DOI: 10.1002/adma.202204551] [Citation(s) in RCA: 2] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/20/2022] [Revised: 07/26/2022] [Indexed: 06/15/2023]
Abstract
Electronic transitions in molecular-circuit elements hinge on complex interactions between molecules and ions, offering a multidimensional parameter space to embed, access, and optimize material functionalities for target-specific applications. This opportunity is not cultivated in molecular memristors because their low-temperature charge transport, which is a route to decipher molecular many-body interactions, is unexplored. To address this, robust, temperature-resilient molecular memristors based on a Ru complex of an azo aromatic ligand are designed, and current-voltage sweep measurements from room temperature down to 2 K with different cooling protocols are performed. By freezing out or activating different components of supramolecular dynamics, the local Coulombic interactions between the molecules and counterions that affect the electronic transport can be controlled. Operating conditions are designed where functionalities spanning bipolar, unipolar, nonvolatile, and volatile memristors with sharp as well as gradual analog transitions are captured within a single device. A mathematical design space evolves, thereof comprising 36 tuneable parameters in which all possible steady-state functional variations in a memristor characteristic can be attainable. This enables a deterministic design route to engineer neuromorphic devices with unprecedented control over the transformation characteristics governing their functional flexibility and tunability.
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Affiliation(s)
- Santi P Rath
- Centre for Nanoscience and Engineering, CeNSE, Indian Institute of Science (IISc), Bangalore, Karnataka, 560012, India
| | - Damien Thompson
- Department of Physics, University of Limerick, Limerick, V94 T9PX, Ireland
| | - Sreebrata Goswami
- Centre for Nanoscience and Engineering, CeNSE, Indian Institute of Science (IISc), Bangalore, Karnataka, 560012, India
| | - Sreetosh Goswami
- Centre for Nanoscience and Engineering, CeNSE, Indian Institute of Science (IISc), Bangalore, Karnataka, 560012, India
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6
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Zhou PK, Lin XL, Chee MY, Lew WS, Zeng T, Li HH, Chen X, Chen ZR, Zheng HD. Switching the memory behaviour from binary to ternary by triggering S 62- relaxation in polysulfide-bearing zinc-organic complex molecular memories. MATERIALS HORIZONS 2023. [PMID: 37070656 DOI: 10.1039/d3mh00037k] [Citation(s) in RCA: 1] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/19/2023]
Abstract
The use of crystalline metal-organic complexes with definite structures as multilevel memories can enable explicit structure-property correlations, which is significant for designing the next generation of memories. Here, four Zn-polysulfide complexes with different degrees of conjugation have been fabricated as memory devices. ZnS6(L)2-based memories (L = pyridine and 3-methylpyridine) can exhibit only bipolar binary memory performances, but ZnS6(L)-based memories (L = 2,2'-bipyridine and 1,10-phenanthroline) illustrate non-volatile ternary memory performances with high ON2/ON1/OFF ratios (104.22/102.27/1 and 104.85/102.58/1) and ternary yields (74% and 78%). Their ON1 states stem from the packing adjustments of organic ligands upon the injection of carriers, and the ON2 states are a result of the ring-to-chain relaxation of S62- anions. The lower conjugated degrees in ZnS6(L)2 result in less compact packing; consequently, the adjacent S62- rings are too long to trigger the S62- relaxation. The deep structure-property correlation in this work provides a new strategy for implementing multilevel memory by triggering polysulfide relaxation based on the conjugated degree regulation of organic ligands.
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Affiliation(s)
- Pan-Ke Zhou
- Fujian Provincial Key Laboratory of Advanced Inorganic Oxygenated Materials, State Key Laboratory of Photocatalysis on Energy and Environment, College of Chemistry, Fuzhou University, Fujian 350108, China.
| | - Xiao-Li Lin
- Fujian Provincial Key Laboratory of Advanced Inorganic Oxygenated Materials, State Key Laboratory of Photocatalysis on Energy and Environment, College of Chemistry, Fuzhou University, Fujian 350108, China.
| | - Mun Yin Chee
- School of Physical and Mathematical Sciences, Nanyang Technological University, Singapore 637371, Singapore
| | - Wen Siang Lew
- School of Physical and Mathematical Sciences, Nanyang Technological University, Singapore 637371, Singapore
| | - Tao Zeng
- Department of Materials Science and Engineering, National University of Singapore, Singapore 117575, Singapore
| | - Hao-Hong Li
- Fujian Provincial Key Laboratory of Advanced Inorganic Oxygenated Materials, State Key Laboratory of Photocatalysis on Energy and Environment, College of Chemistry, Fuzhou University, Fujian 350108, China.
| | - Xiong Chen
- Fujian Provincial Key Laboratory of Advanced Inorganic Oxygenated Materials, State Key Laboratory of Photocatalysis on Energy and Environment, College of Chemistry, Fuzhou University, Fujian 350108, China.
| | - Zhi-Rong Chen
- Fujian Provincial Key Laboratory of Advanced Inorganic Oxygenated Materials, State Key Laboratory of Photocatalysis on Energy and Environment, College of Chemistry, Fuzhou University, Fujian 350108, China.
| | - Hui-Dong Zheng
- Fujian Engineering Research Centre of Advanced Manufacturing Technology for Fine Chemicals, College of Chemical Engineering, Fuzhou University, Fuzhou, Fujian, 350108, China.
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7
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Yang C, Xiao H, Tang L, Luo Z, Luo Y, Zhou N, Liang E, Wang G, Tang J. A 3D multistage information encryption platform with self-erasure function based on a synergistically shape-deformable and AIE fluorescence-tunable hydrogel. MATERIALS HORIZONS 2023. [PMID: 37060150 DOI: 10.1039/d3mh00206c] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/19/2023]
Abstract
The traditional stored information is statically shown on single 2D planes, which leads to low information storage capacity and secondary information leakage without the proper handling of decrypted information. Developing a 3D multistage information encryption platform with self-erasure function is highly desirable. Here, a novel bilayer hydrogel with synergistic deformation and fluorescence color (SDFC) change is designed for 3D multistage information encryption. The bilayer hydrogel consisting of a shape-deformable hydrogel layer and a fluorescence hydrogel layer with aggregation-induced emission (AIE) properties can exhibit pH-responsive SDFC change. Fluorescence information can be ionoprinted on the fluorescent hydrogel layer based on electrostatic interactions and dynamic covalent bonds. The 2D bilayer hydrogel encoded with information can synergistically produce predesigned 3D shape configuration and enhanced background fluorescence to wrap information, which is only readable after sequential shape recovery with the disappearance of background fluorescence. Furthermore, multistage information can be further obtained by stepwise decryption due to information with differential fluorescence fading rates. The displayed information is automatically self-erased in the end, avoiding the information secondary leakage. This study paves an avenue for broadening conventional 2D single-level information encryption platforms to 3D multistage counterparts with self-erasure and multi-decryption capabilities based on SDFC change of the bilayer hydrogel.
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Affiliation(s)
- Caixia Yang
- Hunan Key Laboratory of Biomedical Nanomaterials and Devices, College of Life Sciences and Chemistry, Hunan University of Technology, Zhuzhou, 412007, P. R. China.
- College of Packaging and Material Engineering, Hunan University of Technology, Zhuzhou, 412007, P. R. China
- College of Chemistry and Chemical Engineering, Hunan Institute of Science and Technology, Yueyang, Hunan Province, 414006, P. R. China.
| | - Hangxiang Xiao
- College of Chemistry and Chemical Engineering, Hunan Institute of Science and Technology, Yueyang, Hunan Province, 414006, P. R. China.
| | - Li Tang
- Hunan Key Laboratory of Biomedical Nanomaterials and Devices, College of Life Sciences and Chemistry, Hunan University of Technology, Zhuzhou, 412007, P. R. China.
| | - Zichen Luo
- College of Chemistry and Chemical Engineering, Hunan Institute of Science and Technology, Yueyang, Hunan Province, 414006, P. R. China.
| | - Ying Luo
- College of Chemistry and Chemical Engineering, Hunan Institute of Science and Technology, Yueyang, Hunan Province, 414006, P. R. China.
| | - Ningbo Zhou
- College of Chemistry and Chemical Engineering, Hunan Institute of Science and Technology, Yueyang, Hunan Province, 414006, P. R. China.
- Key Laboratory of Hunan Province for Advanced Carbon-based Functional Materials, School of Chemistry and Chemical Engineering, Hunan Institute of Science and Technology, Yueyang, 414006, P. R. China
| | - Enxiang Liang
- College of Chemistry and Chemical Engineering, Hunan Institute of Science and Technology, Yueyang, Hunan Province, 414006, P. R. China.
- Key Laboratory of Hunan Province for Advanced Carbon-based Functional Materials, School of Chemistry and Chemical Engineering, Hunan Institute of Science and Technology, Yueyang, 414006, P. R. China
| | - Guoxiang Wang
- College of Chemistry and Chemical Engineering, Hunan Institute of Science and Technology, Yueyang, Hunan Province, 414006, P. R. China.
- Key Laboratory of Hunan Province for Advanced Carbon-based Functional Materials, School of Chemistry and Chemical Engineering, Hunan Institute of Science and Technology, Yueyang, 414006, P. R. China
| | - Jianxin Tang
- Hunan Key Laboratory of Biomedical Nanomaterials and Devices, College of Life Sciences and Chemistry, Hunan University of Technology, Zhuzhou, 412007, P. R. China.
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8
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Kamboj N, Betal A, Majumder M, Sahu S, Metre RK. Redox Switching Behavior in Resistive Memory Device Designed Using a Solution-Processable Phenalenyl-Based Co(II) Complex: Experimental and DFT Studies. Inorg Chem 2023; 62:4170-4180. [PMID: 36848532 DOI: 10.1021/acs.inorgchem.2c04264] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 03/01/2023]
Abstract
We herein report a novel square-planar complex [CoIIL], which was synthesized using the electronically interesting phenalenyl-derived ligand LH2 = 9,9'-(ethane-1,2-diylbis(azanediyl))bis(1H-phenalen-1-one). The molecular structure of the complex is confirmed with the help of the single-crystal X-ray diffraction technique. [CoIIL] is a mononuclear complex where the Co(II) ion is present in the square-planar geometry coordinated by the chelating bis-phenalenone ligand. The solid-state packing of [CoIIL] complex in a crystal structure has been explained with the help of supramolecular studies, which revealed that the π···π stacking present in the [CoIIL] complex is analogous to the one present in tetrathiafulvalene/tetracyanoquinodimethane charge transfer salt, well-known materials for their unique charge carrier interfaces. The [CoIIL] complex was employed as the active material to fabricate a resistive switching memory device, indium tin oxide/CoIIL/Al, and characterized using the write-read-erase-read cycle. The device has interestingly shown a stable and reproducible switching between two different resistance states for more than 2000 s. Observed bistable resistive states of the device have been explained by corroborating the electrochemical characterizations and density functional theory studies, where the role of the CoII metal center and π-conjugated phenalenyl backbone in the redox-resistive switching mechanism is proposed.
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Affiliation(s)
- Nisha Kamboj
- Department of Chemistry, Indian Institute of Technology Jodhpur, Rajasthan 342030, India
| | - Atanu Betal
- Department of Physics, Indian Institute of Technology Jodhpur, Rajasthan 342030, India
| | - Moumita Majumder
- Department of Metallurgical and Materials Engineering, Indian Institute of Technology Jodhpur, Rajasthan 342030, India
| | - Satyajit Sahu
- Department of Physics, Indian Institute of Technology Jodhpur, Rajasthan 342030, India
| | - Ramesh K Metre
- Department of Chemistry, Indian Institute of Technology Jodhpur, Rajasthan 342030, India
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9
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Tsurusaki A, Tahara S, Nakamura M, Matsumoto H, Kamikawa K. Synthesis, Structures, and Properties of π-Extended Phosphindolizine Derivatives. Chemistry 2023; 29:e202203321. [PMID: 36539376 DOI: 10.1002/chem.202203321] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 10/26/2022] [Revised: 12/19/2022] [Accepted: 12/20/2022] [Indexed: 12/24/2022]
Abstract
Dibenzo[b,g]phosphindolizine oxide and three types of benzo[e]naphthophosphindolizine oxides have been synthesized by the ring-closing metathesis of benzo[b]phosphole oxide and naphthophosphole oxides with two olefin tethers. Their molecular structures and properties were revealed by X-ray crystallographic analysis, UV-vis spectroscopy, and electrochemical analysis. The number and position of the benzene rings were found to alter the structural geometry and the HOMO/LUMO energy levels, and their effects were investigated by theoretical calculations. Among the phosphindolizine oxide derivatives investigated, only benzo[e]naphtho[2,3-b]phosphindolizine oxide with the naphthalene ring fused at 2,3-positions showed weak yellow fluorescence with a large Stokes shift.
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Affiliation(s)
- Akihiro Tsurusaki
- Department of Chemistry, Graduate School of Science, Osaka Metropolitan University, Sakai, Osaka, 599-8531, Japan
| | - Sana Tahara
- Department of Chemistry, Graduate School of Science, Osaka Metropolitan University, Sakai, Osaka, 599-8531, Japan
| | - Makoto Nakamura
- Department of Chemistry, Graduate School of Science, Osaka Metropolitan University, Sakai, Osaka, 599-8531, Japan
| | - Hiroyo Matsumoto
- Department of Chemistry, Graduate School of Science, Osaka Metropolitan University, Sakai, Osaka, 599-8531, Japan
| | - Ken Kamikawa
- Department of Chemistry, Graduate School of Science, Osaka Metropolitan University, Sakai, Osaka, 599-8531, Japan
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10
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Kelly JA, Streitferdt V, Dimitrova M, Westermair FF, Gschwind RM, Berger RJF, Wolf R. Transition-Metal-Stabilized Heavy Tetraphospholide Anions. J Am Chem Soc 2022; 144:20434-20441. [DOI: 10.1021/jacs.2c08754] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/11/2022]
Affiliation(s)
- John A. Kelly
- Institute of Inorganic Chemistry, University of Regensburg, 93040 Regensburg, Germany
| | - Verena Streitferdt
- Institute of Organic Chemistry, University of Regensburg, 93040 Regensburg, Germany
| | - Maria Dimitrova
- Department of Chemistry, Faculty of Science, University of Helsinki, FI-00014 University of Helsinki, Finland
| | - Franz F. Westermair
- Institute of Organic Chemistry, University of Regensburg, 93040 Regensburg, Germany
| | - Ruth M. Gschwind
- Institute of Organic Chemistry, University of Regensburg, 93040 Regensburg, Germany
| | - Raphael J. F. Berger
- Department for Chemistry and Physics of Materials, Paris-Lodron University Salzburg, 5020 Salzburg, Austria
| | - Robert Wolf
- Institute of Inorganic Chemistry, University of Regensburg, 93040 Regensburg, Germany
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11
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Regulating WORM/Flash electrical memory behavior of metallopolymers through varying metal centers. J Organomet Chem 2022. [DOI: 10.1016/j.jorganchem.2022.122563] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/13/2022]
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12
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Zhang L, Zhang F, Chen J, Jia L, Li Y, Xu J. Stimuli-responsive luminescent nanomaterial based on lanthanide modified carbon dots for multilevel information encryption. Colloids Surf A Physicochem Eng Asp 2022. [DOI: 10.1016/j.colsurfa.2022.130043] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/25/2022]
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13
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Dou F, Zhao X, Gao M, He Z, Wang S, Liu H, Wang S, Wang C. Ternary Memory Behavior of Carbazole‐Based Donor–Acceptor Polymer and CdS NPs Composites. MACROMOL CHEM PHYS 2022. [DOI: 10.1002/macp.202200104] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/05/2022]
Affiliation(s)
- Feng Dou
- School of Chemical Engineering and Materials Heilongjiang University Harbin 150080 P. R. China
| | - Xiaofeng Zhao
- Heilongjiang Provincial Key Laboratory of Micro‐nano Sensitive Devices and Systems Heilongjiang University Harbin 150080 P. R. China
| | - Meng Gao
- School of Chemical Engineering and Materials Heilongjiang University Harbin 150080 P. R. China
| | - Zhaohua He
- School of Chemical Engineering and Materials Heilongjiang University Harbin 150080 P. R. China
| | - Shuao Wang
- State Key Laboratory of Radiation Medicine and Protection School for Radiological and Interdisciplinary Sciences (RAD‐X) and Collaborative Innovation Center of Radiation Medicine of Jiangsu Higher Education Institutions Soochow University Suzhou 215123 P. R. China
| | - Hanzhou Liu
- State Key Laboratory of Radiation Medicine and Protection School for Radiological and Interdisciplinary Sciences (RAD‐X) and Collaborative Innovation Center of Radiation Medicine of Jiangsu Higher Education Institutions Soochow University Suzhou 215123 P. R. China
| | - Shuhong Wang
- School of Chemical Engineering and Materials Heilongjiang University Harbin 150080 P. R. China
| | - Cheng Wang
- School of Chemical Engineering and Materials Key Laboratory of Functional Inorganic Material Chemistry Ministry of Education Heilongjiang University Harbin 150080 P. R. China
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14
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Shen J, Xue F, Wang G, Li Y, Dong H, Zhang Q. Effective Transport Tunnels Achieved by 1,2,4,5-Tetrazine-Induced Intermolecular C-H...N Interaction and Anion Radicals for Stable ReRAM Performance. ACS APPLIED MATERIALS & INTERFACES 2022; 14:8218-8225. [PMID: 35107274 DOI: 10.1021/acsami.1c23654] [Citation(s) in RCA: 4] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/14/2023]
Abstract
The D-A structured small-molecule-based resistive random-access memory (ReRAM) device has been well-researched in the last decade, and the switching mechanism was mainly induced by the intramolecular/intermolecular charge transfer processes from the donors to the acceptors. However, in the previous work, some small molecules with pristine electron acceptors in the backbone could still show the typical memory behaviors, of which the switching mechanism is still ambiguous. In this work, two 1,2,4,5-tetrazine based n-type small-molecular isomers, 2-DPTZ and 4-DPTZ, with the same electron acceptor, 1,2,4,5-tetrazine and pyridine, are chosen to investigate the isomeric effects on molecular packing, switching mechanism, and memory performance. Because of the abundant nitrogen atoms with a localized lone pair of electrons in the sp2 orbital, 2-DPTZ and 4-DPTZ compounds could self-assemble into a long-range ordered molecular packing through intermolecular C-H...N interactions, affording effective transporting tunnels for charge-carrier transport. As expected, the sandwich-structured ITO/2-DPTZ or 4-DPTZ/Al memory devices both showed binary memory characteristics, with 2-DPTZ based memory devices showing the write once read many times (WORM) memory behavior and 4-DPTZ based memory devices having the negative differential resistance (NDR) memory performance. These distinct ReRAM properties arose from the different morphologies of 2-DPTZ and 4-DPTZ films that were induced by the different packing styles between the adjacent molecules, as confirmed by X-ray diffraction (XRD) and tapping-mode atomic force microscopy (AFM) height images. Most importantly, the switching mechanism was thought to be attributed to the injected electrons that reduced the neutral molecules of 2-DPTZ and 4-DPTZ to their corresponding anion radicals. Thus, this present work helps us better understand the conducting mechanism of small molecules with pristine electron acceptors in the backbone and provides a supplementary guideline for designing multilevel small molecules to match the structure-stacking-property relationship.
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Affiliation(s)
- Junyu Shen
- School of Materials Engineering, Changshu Institute of Technology, Changshu, Jiangsu 215500, P.R. China
| | - Fei Xue
- School of Materials Engineering, Changshu Institute of Technology, Changshu, Jiangsu 215500, P.R. China
| | - Guan Wang
- College of Chemistry, Chemical Engineering and Materials Science, Soochow University, Suzhou 215123, P.R. China
| | - Yang Li
- School of Physical Science and Technology, Suzhou University of Science and Technology, Suzhou, Jiangsu 215009, China
| | - Huilong Dong
- School of Materials Engineering, Changshu Institute of Technology, Changshu, Jiangsu 215500, P.R. China
| | - Qijian Zhang
- School of Materials Engineering, Changshu Institute of Technology, Changshu, Jiangsu 215500, P.R. China
- College of Chemistry, Chemical Engineering and Materials Science, Soochow University, Suzhou 215123, P.R. China
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15
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Lian H, Cheng X, Hao H, Han J, Lau MT, Li Z, Zhou Z, Dong Q, Wong WY. Metal-containing organic compounds for memory and data storage applications. Chem Soc Rev 2022; 51:1926-1982. [PMID: 35083990 DOI: 10.1039/d0cs00569j] [Citation(s) in RCA: 20] [Impact Index Per Article: 10.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022]
Abstract
With the upcoming trend of Big Data era, some new types of memory technologies have emerged as substitutes for the traditional Si-based semiconductor memory devices, which are encountering severe scaling down technical obstacles. In particular, the resistance random access memory (RRAM) and magnetic random access memory (MRAM) hold great promise for the in-memory computing, which are regarded as the optimal strategy and pathway to solve the von Neumann bottleneck by high-throughput in situ data processing. As far as the active materials in RRAM and MRAM are concerned, organic semiconducting materials have shown increasing application perspectives in memory devices due to their rich structural diversity and solution processability. With the introduction of metal elements into the backbone of molecules, some new properties and phenomena will emerge accordingly. Consequently, the RRAM and MRAM devices based on metal-containing organic compounds (including the small molecular metal complexes, metallopolymers, metal-organic frameworks (MOFs) and organic-inorganic-hybrid perovskites (OIHPs)) have been widely explored and attracted intense attention. In this review, we highlight the fundamentals of RRAM and MRAM, as well as the research progress of the applications of metal-containing organic compounds in both RRAM and MRAM. Finally, we discuss the challenges and future directions for the research of organic RRAM and MRAM.
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Affiliation(s)
- Hong Lian
- MOE Key Laboratory of Advanced Display and System Applications, Shanghai University, 149 Yanchang Road, Jingan District, Shanghai 200072, China.,School of Mechanical & Electronic Engineering and Automation, Shanghai University, 99 Shangda Road, Baoshan District, Shanghai 200444, China. .,MOE Key Laboratory of Interface Science and Engineering in Advanced Materials, Taiyuan University of Technology, 79 Yingze West Street, Taiyuan, 030024, China
| | - Xiaozhe Cheng
- MOE Key Laboratory of Advanced Display and System Applications, Shanghai University, 149 Yanchang Road, Jingan District, Shanghai 200072, China.,MOE Key Laboratory of Interface Science and Engineering in Advanced Materials, Taiyuan University of Technology, 79 Yingze West Street, Taiyuan, 030024, China.,Department of Applied Biology and Chemical Technology, The Hong Kong Polytechnic University, Hung Hom, Hong Kong, China.
| | - Haotian Hao
- MOE Key Laboratory of Interface Science and Engineering in Advanced Materials, Taiyuan University of Technology, 79 Yingze West Street, Taiyuan, 030024, China
| | - Jinba Han
- MOE Key Laboratory of Interface Science and Engineering in Advanced Materials, Taiyuan University of Technology, 79 Yingze West Street, Taiyuan, 030024, China
| | - Mei-Tung Lau
- Department of Applied Biology and Chemical Technology, The Hong Kong Polytechnic University, Hung Hom, Hong Kong, China. .,The Hong Kong Polytechnic University Shenzhen Research Institute, Shenzhen 518057, China
| | - Zikang Li
- Department of Applied Biology and Chemical Technology, The Hong Kong Polytechnic University, Hung Hom, Hong Kong, China. .,The Hong Kong Polytechnic University Shenzhen Research Institute, Shenzhen 518057, China
| | - Zhi Zhou
- School of Chemistry and Materials Science, Hunan Agricultural University, Changsha 410128, China.
| | - Qingchen Dong
- MOE Key Laboratory of Advanced Display and System Applications, Shanghai University, 149 Yanchang Road, Jingan District, Shanghai 200072, China.,School of Mechanical & Electronic Engineering and Automation, Shanghai University, 99 Shangda Road, Baoshan District, Shanghai 200444, China. .,MOE Key Laboratory of Interface Science and Engineering in Advanced Materials, Taiyuan University of Technology, 79 Yingze West Street, Taiyuan, 030024, China
| | - Wai-Yeung Wong
- Department of Applied Biology and Chemical Technology, The Hong Kong Polytechnic University, Hung Hom, Hong Kong, China. .,The Hong Kong Polytechnic University Shenzhen Research Institute, Shenzhen 518057, China
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16
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Xu J, Zhu T, Shi J, Song B, Zhang L, Zhao D, Dong X, Bi N, Gou J, Jia L. A dual-stimuli-responsive intelligent layered lanthanide hydroxide for application in information security and latent fingerprint identification. J RARE EARTH 2021. [DOI: 10.1016/j.jre.2021.11.007] [Citation(s) in RCA: 4] [Impact Index Per Article: 1.3] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 10/31/2022]
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17
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Song Y, Feng G, Sun C, Liang Q, Wu L, Yu X, Lei S, Hu W. Ternary Conductance Switching Realized by a Pillar[5]arene-Functionalized Two-Dimensional Imine Polymer Film. Chemistry 2021; 27:13605-13612. [PMID: 34312929 DOI: 10.1002/chem.202101772] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 06/02/2021] [Indexed: 02/05/2023]
Abstract
Nowadays, most manufacturing memory devices are based on materials with electrical bistability (i. e., "0" and "1") in response to an applied electric field. Memory devices with multilevel states are highly desired so as to produce high-density and efficient memory devices. Herein, we report the first multichannel strategy to realize a ternary-state memristor. We make use of the intrinsic sub-nanometer channel of pillar[5]arene and nanometer channel of a two-dimensional imine polymer to construct an active layer with multilevel channels for ternary memory devices. Low threshold voltage, long retention time, clearly distinguishable resistance states, high ON/OFF ratio (OFF/ON1/ON2=1 : 10 : 103 ), and high ternary yield (75 %) were obtained. In addition, the flexible memory device based on 2DPTPAZ+TAPB can maintain its stable ternary memory performance after being bent 500 times. The device also exhibits excellent thermal stability and can tolerate a temperature as high as 300 °C. It is envisioned that the results of this work will open up possibilities for multistate, flexible resistive memories with good thermal stability and low energy consumption, and broaden the application of pillar[n]arene.
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Affiliation(s)
- Yaru Song
- Tianjin Key Laboratory of Molecular Optoelectronic Science, Department of Chemistry, School of Science &, Collaborative Innovation Center of Chemical Science and Engineering, Tianjin University, Tianjin, 300072, P. R. China
| | - Guangyuan Feng
- Tianjin Key Laboratory of Molecular Optoelectronic Science, Department of Chemistry, School of Science &, Collaborative Innovation Center of Chemical Science and Engineering, Tianjin University, Tianjin, 300072, P. R. China
| | - Chenfang Sun
- Tianjin Key Laboratory of Molecular Optoelectronic Science, Department of Chemistry, School of Science &, Collaborative Innovation Center of Chemical Science and Engineering, Tianjin University, Tianjin, 300072, P. R. China
| | - Qiu Liang
- Tianjin Key Laboratory of Molecular Optoelectronic Science, Department of Chemistry, School of Science &, Collaborative Innovation Center of Chemical Science and Engineering, Tianjin University, Tianjin, 300072, P. R. China
| | - Lingli Wu
- Medical College, Northwest Minzu University, Lanzhou, 730000, P. R. China
| | - Xi Yu
- Tianjin Key Laboratory of Molecular Optoelectronic Science, Department of Chemistry, School of Science &, Collaborative Innovation Center of Chemical Science and Engineering, Tianjin University, Tianjin, 300072, P. R. China
| | - Shengbin Lei
- Tianjin Key Laboratory of Molecular Optoelectronic Science, Department of Chemistry, School of Science &, Collaborative Innovation Center of Chemical Science and Engineering, Tianjin University, Tianjin, 300072, P. R. China
| | - Wenping Hu
- Tianjin Key Laboratory of Molecular Optoelectronic Science, Department of Chemistry, School of Science &, Collaborative Innovation Center of Chemical Science and Engineering, Tianjin University, Tianjin, 300072, P. R. China
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18
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Zhuang Y, Wang Y, Deng Y, Li F, Chen X, Liu S, Tong Y, Zhao Q. Memristors Based on an Iridium(III) Complex Containing Viologen for Advanced Synaptic Bionics. Inorg Chem 2021; 60:13021-13028. [PMID: 34376047 DOI: 10.1021/acs.inorgchem.1c01439] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 02/04/2023]
Abstract
Memristors with nonvolatile memory properties are expected to open the era of neuromorphic computing. However, it remains a huge challenge to develop memristors with high uniformity, high stability, and low power consumption for advanced synaptic bionics. Herein, an electroactive iridium(III) complex Ir-vio was designed and synthesized by incorporating a viologen moiety into its N∧N ligand. Complex Ir-vio showed multiple redox states and high sensitivity to an electrical stimulus. Importantly, two-terminal memristors with Ag/Ir-vio/W structure were successfully fabricated by the solution-processable method, which exhibited multilevel storage characteristics with a low switching threshold voltage of 0.5 V and high ON1/ON2/ON3/OFF current ratio of 105/103/102/1 at a low reading bias of 0.05 V. Moreover, the memristors can mimic synaptic plasticity, indicating that they can act as artificial synapses to construct brain-inspired neural networks. The memristive mechanisms can be ascribed to the interconversion among different charge-transfer and redox states under various electrical stimulus. To the best of our knowledge, this work is the first experimental demonstration of memristors based on iridium(III) complexes, opening a new era for the development of synaptic bionic devices based on organometallic compounds.
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Affiliation(s)
- Yanling Zhuang
- State Key Laboratory of Organic Electronics and Information Displays & Jiangsu Key Laboratory for Biosensors, Institute of Advanced Materials, Nanjing University of Posts and Telecommunications, Nanjing 210023, Jiangsu, P. R. China
| | - Yu Wang
- College of Electronic and Optical Engineering & College of Microelectronics, Institute of Flexible Electronics (Future Technology), Jiangsu Province Engineering Research Center for Fabrication and Application of Special Optical Fiber Materials and Devices, Nanjing University of Posts and Telecommunications, Nanjing 210023, Jiangsu, P. R. China
| | - Yongjing Deng
- State Key Laboratory of Organic Electronics and Information Displays & Jiangsu Key Laboratory for Biosensors, Institute of Advanced Materials, Nanjing University of Posts and Telecommunications, Nanjing 210023, Jiangsu, P. R. China
| | - Feiyang Li
- State Key Laboratory of Organic Electronics and Information Displays & Jiangsu Key Laboratory for Biosensors, Institute of Advanced Materials, Nanjing University of Posts and Telecommunications, Nanjing 210023, Jiangsu, P. R. China
| | - Xintong Chen
- College of Electronic and Optical Engineering & College of Microelectronics, Institute of Flexible Electronics (Future Technology), Jiangsu Province Engineering Research Center for Fabrication and Application of Special Optical Fiber Materials and Devices, Nanjing University of Posts and Telecommunications, Nanjing 210023, Jiangsu, P. R. China
| | - Shujuan Liu
- State Key Laboratory of Organic Electronics and Information Displays & Jiangsu Key Laboratory for Biosensors, Institute of Advanced Materials, Nanjing University of Posts and Telecommunications, Nanjing 210023, Jiangsu, P. R. China
| | - Yi Tong
- College of Electronic and Optical Engineering & College of Microelectronics, Institute of Flexible Electronics (Future Technology), Jiangsu Province Engineering Research Center for Fabrication and Application of Special Optical Fiber Materials and Devices, Nanjing University of Posts and Telecommunications, Nanjing 210023, Jiangsu, P. R. China
| | - Qiang Zhao
- State Key Laboratory of Organic Electronics and Information Displays & Jiangsu Key Laboratory for Biosensors, Institute of Advanced Materials, Nanjing University of Posts and Telecommunications, Nanjing 210023, Jiangsu, P. R. China.,College of Electronic and Optical Engineering & College of Microelectronics, Institute of Flexible Electronics (Future Technology), Jiangsu Province Engineering Research Center for Fabrication and Application of Special Optical Fiber Materials and Devices, Nanjing University of Posts and Telecommunications, Nanjing 210023, Jiangsu, P. R. China
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19
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Tang MC, Chan MY, Yam VWW. Molecular Design of Luminescent Gold(III) Emitters as Thermally Evaporable and Solution-Processable Organic Light-Emitting Device (OLED) Materials. Chem Rev 2021; 121:7249-7279. [DOI: 10.1021/acs.chemrev.0c00936] [Citation(s) in RCA: 36] [Impact Index Per Article: 12.0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 01/04/2023]
Affiliation(s)
- Man-Chung Tang
- Department of Chemistry, The University of Hong Kong, Pokfulam Road, Hong Kong, P.R. China
| | - Mei-Yee Chan
- Department of Chemistry, The University of Hong Kong, Pokfulam Road, Hong Kong, P.R. China
| | - Vivian Wing-Wah Yam
- Department of Chemistry, The University of Hong Kong, Pokfulam Road, Hong Kong, P.R. China
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20
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Barman BK, Khatua M, Goswami B, Samanta S, Vijayaraghavan RK. Irreversible Resistive State Switching in Devices with a Homoleptic Cobalt(II) Complex Active Layer. Chem Asian J 2021; 16:1545-1552. [PMID: 33871144 DOI: 10.1002/asia.202100152] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 02/11/2021] [Revised: 04/12/2021] [Indexed: 02/02/2023]
Abstract
Molecules with bi-stable electronic transport behaviour have been in upfront research topics of the molecular semiconductor devices in the past few decades due to the use of such materials in resistive data storage devices. Transition metal complexes (TMC) are expected to be potential candidates in regard to the tunable and manifold redox behaviour expecting multiple bulk transport states. Finding alternate mechanisms in such devices with TMC as the active layer materials would revoke the multifaceted approach to the functional gain. We have succeeded in demonstrating write once-read many (WORM) type of resistive memory device using a homoleptic Cobalt(II) (Co(II)) complex with large on/off current ratio ensuring the easy readout process at lower voltage. The advantage of this device was the turn on voltage was found to be the low (<2.7 V) operational voltage and the success ratio of the devices were more than 83%. The durability of the stored data was found to be more than 35,000 seconds which ensures the stability of the bistable state in the fabricated devices. Such ambient stable, solution processable devices are important for the large-scale printable devices. The manuscript describes the preparation, optical and electrochemical characterisation of the metal complex used along with a detailed mechanistic investigations and electrical characterisation of memory device obtained from a stable cobalt complex.
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Affiliation(s)
- Biswajit K Barman
- Department of Chemical Sciences, Indian Institute of Science Education and Research Kolkata, West Bengal, India
| | - Manas Khatua
- Department of Chemical Sciences, Indian Institute of Science Education and Research Kolkata, West Bengal, India
| | - Bappaditya Goswami
- Department of Chemical Sciences, Indian Institute of Science Education and Research Kolkata, West Bengal, India
| | - Subhas Samanta
- Department of Chemistry, Indian Institute of Technology Jammu, Jammu, 181221, India
| | - Ratheesh K Vijayaraghavan
- Department of Chemical Sciences, Indian Institute of Science Education and Research Kolkata, West Bengal, India
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21
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Li Y, Qian Q, Ling S, Fan T, Zhang C, Zhu X, Zhang Q, Zhang Y, Zhang J, Yu S, Yao J, Ma C. A benzothiadiazole-containing π-conjugated small molecule as promising element for nonvolatile multilevel resistive memory device. J SOLID STATE CHEM 2021. [DOI: 10.1016/j.jssc.2020.121850] [Citation(s) in RCA: 3] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 01/17/2023]
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22
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Tsuchido Y, Abe R, Ide T, Osakada K. A Macrocyclic Gold(I)-Biphenylene Complex: Triangular Molecular Structure with Twisted Au 2 (diphosphine) Corners and Reductive Elimination of [6]Cycloparaphenylene. Angew Chem Int Ed Engl 2020; 59:22928-22932. [PMID: 32692468 DOI: 10.1002/anie.202005482] [Citation(s) in RCA: 31] [Impact Index Per Article: 7.8] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 04/15/2020] [Revised: 07/08/2020] [Indexed: 12/15/2022]
Abstract
The digold(I) complex [Au2 Cl2 (Cy2 PCH2 PCy2 )] reacts with 4,4'-diphenylene diboronic acid to form a triangular macrocyclic complex with twisted Au-P-C-P-Au groups at the three corners. The synthesis of the complex and its chemical oxidation produced [6]cycloparaphenylene ([6]CPP) in 59 % overall yield.
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Affiliation(s)
- Yoshitaka Tsuchido
- Laboratory for Chemistry and Life Science, Institute of Innovative Research, Tokyo Institute of Technology, 4259-R1-3 Nagatsuta, Midori-ku, Yokohama, 226-8503, Japan.,Department of Chemistry, Faculty of Science, Tokyo University of Science, 1-3 Kagurazaka, Shinjuku-ku, Tokyo, 162-8601, Japan
| | - Ryota Abe
- Laboratory for Chemistry and Life Science, Institute of Innovative Research, Tokyo Institute of Technology, 4259-R1-3 Nagatsuta, Midori-ku, Yokohama, 226-8503, Japan
| | - Tomohito Ide
- Department of Chemical Science and Engineering, National Institute of Technology, Tokyo College, 1220-2 Kunugida-machi, Hachioji-shi, Tokyo, 193-0997, Japan
| | - Kohtaro Osakada
- Laboratory for Chemistry and Life Science, Institute of Innovative Research, Tokyo Institute of Technology, 4259-R1-3 Nagatsuta, Midori-ku, Yokohama, 226-8503, Japan
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23
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Wong CL, Cheng YH, Poon CT, Yam VWW. Synthesis, Photophysical, Photochromic, and Photomodulated Resistive Memory Studies of Dithienylethene-Containing Copper(I) Diimine Complexes. Inorg Chem 2020; 59:14785-14795. [PMID: 32914626 DOI: 10.1021/acs.inorgchem.0c02089] [Citation(s) in RCA: 5] [Impact Index Per Article: 1.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/29/2022]
Abstract
A series of dithienylethene-containing copper(I) diimine complexes have been synthesized and structurally characterized. Systematic studies on their photophysics, electrochemistry, and photochromism have been carried out. The photoinduced color changes of the copper(I) complexes have been achieved by photoexcitation into the metal-to-ligand charge-transfer (MLCT) absorption bands, indicating the photosensitization of light-induced cyclization by the 3MLCT excited state. In addition, by an increase in either the steric bulkiness around the copper(I) center or the structural rigidity of the complexes, the quantum efficiencies of photoluminescence and photocyclization can be effectively enhanced because of suppression of the flattening distortion of the complexes at the MLCT excited state. Furthermore, one of the complexes has been employed as an active component in the fabrication of solution-processed resistive memory devices. Notable lowering of the switching threshold voltage of the binary memory devices has been realized through photocyclization of the dithienylethene-containing copper(I) system.
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Affiliation(s)
- Cheok-Lam Wong
- Department of Chemistry, The University of Hong Kong, Pokfulam Road, Hong Kong, China
| | - Yat-Hin Cheng
- Department of Chemistry, The University of Hong Kong, Pokfulam Road, Hong Kong, China
| | - Chun-Ting Poon
- Department of Chemistry, The University of Hong Kong, Pokfulam Road, Hong Kong, China
| | - Vivian Wing-Wah Yam
- Department of Chemistry, The University of Hong Kong, Pokfulam Road, Hong Kong, China
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24
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Tsuchido Y, Abe R, Ide T, Osakada K. A Macrocyclic Gold(I)–Biphenylene Complex: Triangular Molecular Structure with Twisted Au
2
(diphosphine) Corners and Reductive Elimination of [6]Cycloparaphenylene. Angew Chem Int Ed Engl 2020. [DOI: 10.1002/ange.202005482] [Citation(s) in RCA: 9] [Impact Index Per Article: 2.3] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 01/14/2023]
Affiliation(s)
- Yoshitaka Tsuchido
- Laboratory for Chemistry and Life Science Institute of Innovative Research Tokyo Institute of Technology 4259-R1-3 Nagatsuta, Midori-ku Yokohama 226-8503 Japan
- Department of Chemistry Faculty of Science Tokyo University of Science 1–3 Kagurazaka, Shinjuku-ku Tokyo 162-8601 Japan
| | - Ryota Abe
- Laboratory for Chemistry and Life Science Institute of Innovative Research Tokyo Institute of Technology 4259-R1-3 Nagatsuta, Midori-ku Yokohama 226-8503 Japan
| | - Tomohito Ide
- Department of Chemical Science and Engineering National Institute of Technology, Tokyo College 1220-2 Kunugida-machi, Hachioji-shi Tokyo 193-0997 Japan
| | - Kohtaro Osakada
- Laboratory for Chemistry and Life Science Institute of Innovative Research Tokyo Institute of Technology 4259-R1-3 Nagatsuta, Midori-ku Yokohama 226-8503 Japan
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25
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Li L. Graphene Oxide: Graphene Quantum Dot Nanocomposite for Better Memristic Switching Behaviors. NANOMATERIALS (BASEL, SWITZERLAND) 2020; 10:E1448. [PMID: 32722171 PMCID: PMC7466482 DOI: 10.3390/nano10081448] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 06/27/2020] [Revised: 07/15/2020] [Accepted: 07/21/2020] [Indexed: 01/17/2023]
Abstract
Tristable memristic switching provides the capability for multi-bit data storage. In this study, all-inorganic multi-bit memory devices were successfully manufactured by the attachment of graphene quantum dots (GQDs) onto graphene oxide (GO) through a solution-processable method. By means of doping GQDs as charge-trapping centers, the device indium-tin oxide (ITO)/GO:0.5 wt%GQDs/Ni revealed controllable memristic switching behaviors that were tunable from binary to ternary, and remarkably enhanced in contrast with ITO/GO/Ni. It was found that the device has an excellent performance in memristic switching parameters, with a SET1, SET2 and RESET voltage of -0.9 V, -1.7 V and 5.15 V, as well as a high ON2/ON1/OFF current ratio (103:102:1), and a long retention time (104 s) together with 100 successive cycles. The conduction mechanism of the binary and ternary GO-based memory cells was discussed in terms of experimental data employing a charge trapping-detrapping mechanism. The reinforcement effect of GQDs on the memristic switching of GO through cycle-to-cycle operation has been extensively investigated, offering great potential application for multi-bit data storage in ultrahigh-density, nonvolatile memory.
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Affiliation(s)
- Lei Li
- HLJ Province Key Laboratories of Senior-Education for Electronic Engineering, Heilongjiang University, Harbin 150080, China;
- Research Center for Fiber Optic Sensing Technology National Local Joint Engineering, Heilongjiang University, Harbin 150080, China
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26
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Yam VWW, Chan AKW, Hong EYH. Charge-transfer processes in metal complexes enable luminescence and memory functions. Nat Rev Chem 2020. [DOI: 10.1038/s41570-020-0199-7] [Citation(s) in RCA: 61] [Impact Index Per Article: 15.3] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/18/2022]
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27
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Wong CL, Ng M, Hong EYH, Wong YC, Chan MY, Yam VWW. Photoresponsive Dithienylethene-Containing Tris(8-hydroxyquinolinato)aluminum(III) Complexes with Photocontrollable Electron-Transporting Properties for Solution-Processable Optical and Organic Resistive Memory Devices. J Am Chem Soc 2020; 142:12193-12206. [DOI: 10.1021/jacs.0c03057] [Citation(s) in RCA: 27] [Impact Index Per Article: 6.8] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/21/2022]
Affiliation(s)
- Cheok-Lam Wong
- Department of Chemistry, The University of Hong Kong, Pokfulam Road, Hong Kong, China
| | - Maggie Ng
- Department of Chemistry, The University of Hong Kong, Pokfulam Road, Hong Kong, China
| | - Eugene Yau-Hin Hong
- Department of Chemistry, The University of Hong Kong, Pokfulam Road, Hong Kong, China
| | - Yi-Chun Wong
- Department of Chemistry, The University of Hong Kong, Pokfulam Road, Hong Kong, China
| | - Mei-Yee Chan
- Department of Chemistry, The University of Hong Kong, Pokfulam Road, Hong Kong, China
| | - Vivian Wing-Wah Yam
- Department of Chemistry, The University of Hong Kong, Pokfulam Road, Hong Kong, China
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28
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Goswami S, Rath SP, Thompson D, Hedström S, Annamalai M, Pramanick R, Ilic BR, Sarkar S, Hooda S, Nijhuis CA, Martin J, Williams RS, Goswami S, Venkatesan T. Charge disproportionate molecular redox for discrete memristive and memcapacitive switching. NATURE NANOTECHNOLOGY 2020; 15:380-389. [PMID: 32203436 DOI: 10.1038/s41565-020-0653-1] [Citation(s) in RCA: 37] [Impact Index Per Article: 9.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/04/2019] [Accepted: 01/31/2020] [Indexed: 05/24/2023]
Abstract
Electronic symmetry breaking by charge disproportionation results in multifaceted changes in the electronic, magnetic and optical properties of a material, triggering ferroelectricity, metal/insulator transition and colossal magnetoresistance. Yet, charge disproportionation lacks technological relevance because it occurs only under specific physical conditions of high or low temperature or high pressure. Here we demonstrate a voltage-triggered charge disproportionation in thin molecular films of a metal-organic complex occurring in ambient conditions. This provides a technologically relevant molecular route for simultaneous realization of a ternary memristor and a binary memcapacitor, scalable down to a device area of 60 nm2. Supported by mathematical modelling, our results establish that multiple memristive states can be functionally non-volatile, yet discrete-a combination perceived as theoretically prohibited. Our device could be used as a binary or ternary memristor, a binary memcapacitor or both concomitantly, and unlike the existing 'continuous state' memristors, its discrete states are optimal for high-density, ultra-low-energy digital computing.
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Affiliation(s)
- Sreetosh Goswami
- NUSNNI-NanoCore, National University of Singapore, Singapore, Singapore.
- NUS Graduate School for Integrative Science and Engineering, National University of Singapore, Singapore, Singapore.
| | - Santi P Rath
- School of Chemical Sciences, Indian Association for the Cultivation of Science (IACS), Kolkata, India
| | - Damien Thompson
- Department of Physics, Bernal Institute, University of Limerick, Limerick, Ireland.
| | - Svante Hedström
- Fysikum, Stockholm University, Stockholm, Sweden
- Svensk Kärnbränslehantering, Solna, Sweden
| | | | - Rajib Pramanick
- School of Chemical Sciences, Indian Association for the Cultivation of Science (IACS), Kolkata, India
| | - B Robert Ilic
- Center for Nanoscale Science and Technology, National Institute of Standards and Technology, Gaithersburg, MD, USA
| | - Soumya Sarkar
- NUSNNI-NanoCore, National University of Singapore, Singapore, Singapore
- NUS Graduate School for Integrative Science and Engineering, National University of Singapore, Singapore, Singapore
| | - Sonu Hooda
- NUSNNI-NanoCore, National University of Singapore, Singapore, Singapore
| | - Christian A Nijhuis
- NUSNNI-NanoCore, National University of Singapore, Singapore, Singapore
- Department of Chemistry, National University of Singapore, Singapore, Singapore
- Centre for Advanced 2D Materials, National University of Singapore, Singapore, Singapore
| | - Jens Martin
- NUSNNI-NanoCore, National University of Singapore, Singapore, Singapore.
- Centre for Advanced 2D Materials, National University of Singapore, Singapore, Singapore.
- Department of Physics, National University of Singapore, Singapore, Singapore.
- Leibniz Institut für Kristallzüchtung, Materials Science Department, Berlin, Germany.
| | - R Stanley Williams
- Department of Electrical and Computer Engineering, Texas A&M University, College Station, TX, USA
| | - Sreebrata Goswami
- School of Chemical Sciences, Indian Association for the Cultivation of Science (IACS), Kolkata, India.
| | - T Venkatesan
- NUSNNI-NanoCore, National University of Singapore, Singapore, Singapore.
- NUS Graduate School for Integrative Science and Engineering, National University of Singapore, Singapore, Singapore.
- Department of Physics, National University of Singapore, Singapore, Singapore.
- Department of Electrical and Computer Engineering, National University of Singapore, Singapore, Singapore.
- Materials Science and Engineering Department, National University of Singapore, Singapore, Singapore.
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29
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Jia L, Zhang B, Xu J, Zhu T, Chen R, Zhou F. Chameleon Luminophore for Erasable Encrypted and Decrypted Devices: From Dual-Channel, Programmable, Smart Sensory Lanthanide Hydrogel to Logic Devices. ACS APPLIED MATERIALS & INTERFACES 2020; 12:19955-19964. [PMID: 32252519 DOI: 10.1021/acsami.0c03219] [Citation(s) in RCA: 20] [Impact Index Per Article: 5.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
With the rapid development of the data security technology, increasing attention has been paid to programmable memory materials with desirable security. However, most conventional memory devices only have a single switchable color state. In this research, a kind of pH-responsive Chameleon luminescent sensor (Lap@Eu-OFX, Lap = laponite, OFX = ofloxacin) based on lanthanide doping has been fabricated, which can realize highly contrast, dynamically controlled full-color display by changing the pH value of the solution. The advanced programmable security inks, including the green and red luminescent inks, have been prepared and used to protect confidential information. More interestingly, triethylamine and hydrochloric acid are selected as encryption and decryption reagents, which can repeatedly switch the emission color of important data. Hence, the high-tech security inks show great potential in data coding, multiencryption, and decryption under UV light. Furthermore, the designed dual-channel memory device, Lap@Eu-OFX@CS (CS = Chitosan), enables reversible synchronous switching of sol-gel and emission color when converting from acid to base conditions. This can be dynamically monitored by a subsequent logic gate system and can be converted and stored into binary values. This work provides an effective approach for the design and promising application of information encryptor, smart monitor, and circuit controllers.
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Affiliation(s)
- Lei Jia
- College of Chemistry and Chemical Engineering, Henan Polytechnic University, Jiaozuo, Henan 454000, P. R. China
| | - Beibei Zhang
- College of Chemistry and Chemical Engineering, Henan Polytechnic University, Jiaozuo, Henan 454000, P. R. China
| | - Jun Xu
- College of Chemistry and Chemical Engineering, Henan Polytechnic University, Jiaozuo, Henan 454000, P. R. China
| | - Tinghui Zhu
- College of Chemistry and Chemical Engineering, Henan Polytechnic University, Jiaozuo, Henan 454000, P. R. China
| | - Rujie Chen
- College of Chemistry and Chemical Engineering, Henan Polytechnic University, Jiaozuo, Henan 454000, P. R. China
| | - Feng Zhou
- State Key Laboratory of Solid Lubrication, Lanzhou Institute of Chemical Physics, Chinese Academy of Sciences, Lanzhou 730000, P. R. China
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30
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Wang T, Ji X, Tao Z, Zhou X, Hao Z, Wang X, Gao X, Wang S, Liu Y. Dual stimuli-responsive lanthanide-based phosphors for an advanced full-color anti-counterfeiting system. RSC Adv 2020; 10:15573-15578. [PMID: 35495456 PMCID: PMC9052573 DOI: 10.1039/d0ra01594f] [Citation(s) in RCA: 12] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 02/19/2020] [Accepted: 04/13/2020] [Indexed: 12/14/2022] Open
Abstract
Dual stimuli-responsive lanthanide (Ln)-based phosphors were prepared for constructing a multi-level full color anti-counterfeiting system. The encrypted information can be visually read out under UV irradiation. Further triggered by water, not only are the fluorescence colors changed, but so are the patterns of the encrypted information. The Ln-based phosphors can be cost-effectively prepared in a simple way, presenting great potential application in constructing an advanced anti-counterfeiting system with a convenient authentication assay. Dual stimuli-responsive lanthanide-based phosphors were prepared for constructing a multilevel full color anti-counterfeiting system, augmenting the security level for information protection.![]()
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Affiliation(s)
- Tianlin Wang
- State Key Laboratory of Food Nutrition and Safety
- College of Food Engineering and Biotechnology
- Tianjin University of Science and Technology
- Tianjin 300457
- P. R. China
| | - Xiangyi Ji
- State Key Laboratory of Food Nutrition and Safety
- College of Food Engineering and Biotechnology
- Tianjin University of Science and Technology
- Tianjin 300457
- P. R. China
| | - Zhanhui Tao
- State Key Laboratory of Food Nutrition and Safety
- College of Food Engineering and Biotechnology
- Tianjin University of Science and Technology
- Tianjin 300457
- P. R. China
| | - Xiao Zhou
- State Key Laboratory of Food Nutrition and Safety
- College of Food Engineering and Biotechnology
- Tianjin University of Science and Technology
- Tianjin 300457
- P. R. China
| | - Zhe Hao
- State Key Laboratory of Food Nutrition and Safety
- College of Food Engineering and Biotechnology
- Tianjin University of Science and Technology
- Tianjin 300457
- P. R. China
| | - Xinke Wang
- State Key Laboratory of Food Nutrition and Safety
- College of Food Engineering and Biotechnology
- Tianjin University of Science and Technology
- Tianjin 300457
- P. R. China
| | - Xia Gao
- State Key Laboratory of Food Nutrition and Safety
- College of Food Engineering and Biotechnology
- Tianjin University of Science and Technology
- Tianjin 300457
- P. R. China
| | - Shuo Wang
- Tianjin Key Laboratory of Food Science and Health
- School of Medicine
- Nankai University
- Tianjin
- P. R. China
| | - Yaqing Liu
- State Key Laboratory of Food Nutrition and Safety
- College of Food Engineering and Biotechnology
- Tianjin University of Science and Technology
- Tianjin 300457
- P. R. China
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31
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Lin X, Wang C, Chen Q, Yang E, Lv W, Wang W, Ling Q. Synthesis of Novel Pr-bonded Polymers with Phenanthroline Units for Polymer Memory Devices. CHEM LETT 2019. [DOI: 10.1246/cl.190664] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.4] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/28/2022]
Affiliation(s)
- Xingchi Lin
- College of Chemistry and Materials Science, Fujian Normal University, Fuzhou 350007, P. R. China
| | - Chun Wang
- College of Chemistry and Materials Science, Fujian Normal University, Fuzhou 350007, P. R. China
| | - Qiming Chen
- College of Chemistry and Materials Science, Fujian Normal University, Fuzhou 350007, P. R. China
| | - E Yang
- College of Chemistry and Materials Science, Fujian Normal University, Fuzhou 350007, P. R. China
| | - Wei Lv
- College of Chemistry and Materials Science, Fujian Normal University, Fuzhou 350007, P. R. China
| | - Wen Wang
- College of Chemistry and Materials Science, Fujian Normal University, Fuzhou 350007, P. R. China
| | - Qidan Ling
- College of Chemistry and Materials Science, Fujian Normal University, Fuzhou 350007, P. R. China
- Fujian Provincial Key Laboratory of Polymer Materials, Fuzhou 350007, P. R. China
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32
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Li Y, Zhu X, Li Y, Zhang M, Ma C, Li H, Lu J, Zhang Q. Highly Robust Organometallic Small-Molecule-Based Nonvolatile Resistive Memory Controlled by a Redox-Gated Switching Mechanism. ACS APPLIED MATERIALS & INTERFACES 2019; 11:40332-40338. [PMID: 31610648 DOI: 10.1021/acsami.9b13401] [Citation(s) in RCA: 22] [Impact Index Per Article: 4.4] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/10/2023]
Abstract
Although organic small-molecule-based memory devices (OSMDs) have been demonstrated to show great potential for the application in next-generation data-storage technology, progress toward their further development has been hugely hindered by the ambiguity of their electrical switching mechanism. Thus, purposely fabricating OSMDs with a definite switching behavior is very urgent. Here, we reported a redox-gated nonvolatile rewritable memory device using an organometallic small molecule as an active material. By introducing the redox-active ferrocene into an organic skeleton, the target small molecule exhibits reliable and robust FLASH-type bistable electrical characteristics with a clear redox-controlled switching mechanism, which leads to low operational voltages, good endurance, and long retention. Our study offers a proof-of-concept strategy to design controllable OSMDs with excellent performances.
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Affiliation(s)
- Yang Li
- Jiangsu Key Laboratory of Micro and Nano Heat Fluid Flow Technology and Energy Application, School of Mathematics and Physics , Suzhou University of Science and Technology , Suzhou , Jiangsu 215009 , P. R. China
- College of Chemistry, Chemical Engineering, and Materials Science , Soochow University , Suzhou 215123 , P. R. China
- School of Materials Science and Engineering , Nanyang Technological University , Singapore 639798 , Singapore
| | - Xiaolin Zhu
- Jiangsu Key Laboratory of Micro and Nano Heat Fluid Flow Technology and Energy Application, School of Mathematics and Physics , Suzhou University of Science and Technology , Suzhou , Jiangsu 215009 , P. R. China
| | - Yujia Li
- Jiangsu Key Laboratory of Micro and Nano Heat Fluid Flow Technology and Energy Application, School of Mathematics and Physics , Suzhou University of Science and Technology , Suzhou , Jiangsu 215009 , P. R. China
| | - Mayue Zhang
- Jiangsu Key Laboratory of Micro and Nano Heat Fluid Flow Technology and Energy Application, School of Mathematics and Physics , Suzhou University of Science and Technology , Suzhou , Jiangsu 215009 , P. R. China
| | - Chunlan Ma
- Jiangsu Key Laboratory of Micro and Nano Heat Fluid Flow Technology and Energy Application, School of Mathematics and Physics , Suzhou University of Science and Technology , Suzhou , Jiangsu 215009 , P. R. China
| | - Hua Li
- College of Chemistry, Chemical Engineering, and Materials Science , Soochow University , Suzhou 215123 , P. R. China
| | - Jianmei Lu
- College of Chemistry, Chemical Engineering, and Materials Science , Soochow University , Suzhou 215123 , P. R. China
| | - Qichun Zhang
- School of Materials Science and Engineering , Nanyang Technological University , Singapore 639798 , Singapore
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33
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Wu NMW, Yam VWW. Photochromic Barbiturate Pendant-Containing Benzo[ b]phosphole Oxides with Co-Assembly Property and Photoinduced Morphological Changes. ACS APPLIED MATERIALS & INTERFACES 2019; 11:40290-40299. [PMID: 31633321 DOI: 10.1021/acsami.9b13900] [Citation(s) in RCA: 9] [Impact Index Per Article: 1.8] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/10/2023]
Abstract
A series of novel barbiturate pendant-containing benzo[b]phosphole oxides has been demonstrated to exhibit photochromic and co-assembly properties. Both the open form and the photogenerated closed form of the diarylethene-based benzo[b]phosphole oxides have displayed color changes with new appearance of the bathochromic-shifted lowest-energy absorption bands upon addition of the H-bonding ditopic receptor that is complementary to the barbiturate groups, probably resulting in the formation of a supramolecular polymer. The co-assembly mixtures have displayed dissociation and association processes upon heating and cooling, respectively. Moreover, both the unassembled and co-assembled states of the benzo[b]phosphole oxide have exhibited photoinduced coloration, leading to a near-infrared absorption behavior. Multiaddressable states of the co-assembly mixture with multiple colors have been achieved via the combination of photochromism and thermochromism. More interestingly, photoinduced morphological changes from extensive porous network structures to ring-like aggregates have been observed for the co-assembly upon photoirradiation. The present work provides important insight for further developments of the multiaddressable systems and the supramolecular polymers with photo- and thermo-responsive behaviors, paving the way for the future design of photochromic materials with interesting photocontrollable functions.
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Affiliation(s)
- Nathan Man-Wai Wu
- Institute of Molecular Functional Materials [Areas of Excellence Scheme, University Grant Committee (Hong Kong)] and Department of Chemistry , The University of Hong Kong , Pokfulam Road , Hong Kong , PR China
| | - Vivian Wing-Wah Yam
- Institute of Molecular Functional Materials [Areas of Excellence Scheme, University Grant Committee (Hong Kong)] and Department of Chemistry , The University of Hong Kong , Pokfulam Road , Hong Kong , PR China
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34
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Shao JY, Cui BB, Tang JH, Zhong YW. Resistive memory switching of transition-metal complexes controlled by ligand design. Coord Chem Rev 2019. [DOI: 10.1016/j.ccr.2019.05.010] [Citation(s) in RCA: 28] [Impact Index Per Article: 5.6] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/20/2022]
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35
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Tsurusaki A, Matsumoto H, Kamikawa K. Dibenzo[b,e]phosphindolizines synthesized by a ring-closing metathesis of benzo[b]phospholes with two vinyl tethers. Chem Commun (Camb) 2019; 55:4909-4912. [PMID: 30892322 DOI: 10.1039/c9cc00463g] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.6] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/11/2022]
Abstract
Dibenzo[b,e]phosphindolizines 1 were successfully synthesized by a ring-closing metathesis of benzo[b]phosphole chalcogenides 2a-2c with two vinyl tethers (for chalcogen analogs 1a-1c), and by a deselenization reaction (for lone-pair analog 1d). The structures, properties, and bowl inversion derived from a phosphorus atom were fully investigated.
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Affiliation(s)
- Akihiro Tsurusaki
- Department of Chemistry, Graduate School of Science, Osaka Prefecture University, Sakai, Osaka 599-8531, Japan.
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36
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Ternary Memristic Effect of Trilayer-Structured Graphene-Based Memory Devices. NANOMATERIALS 2019; 9:nano9040518. [PMID: 30987015 PMCID: PMC6524159 DOI: 10.3390/nano9040518] [Citation(s) in RCA: 7] [Impact Index Per Article: 1.4] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 02/21/2019] [Revised: 03/08/2019] [Accepted: 03/15/2019] [Indexed: 01/19/2023]
Abstract
A tristable memory device with a trilayer structure utilizes poly(methyl methacrylate) (PMMA) sandwiched between double-stacked novel nanocomposite films that consist of 2-(4-tert-butylphenyl)-5-(4-biphenylyl)-1,3,4-oxadiazole (PBD) doped with graphene oxide (GO). We successfully fabricated devices consisting of single and double GO@PBD nanocomposite films embedded in polymer layers. These devices had binary and ternary nonvolatile resistive switching behaviors, respectively. Binary memristic behaviors were observed for the device with a single GO@PBD nanocomposite film, while ternary behaviors were observed for the device with the double GO@PBD nanocomposite films. The heterostructure GO@PBD/PMMA/GO@PBD demonstrated ternary charge transport on the basis of I–V fitting curves and energy-band diagrams. Tristable memory properties could be enhanced by this novel trilayer structure. These results show that the novel graphene-based memory devices with trilayer structure can be applied to memristic devices. Charge trap materials with this innovative architecture for memristic devices offer a novel design scheme for multi-bit data storage.
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37
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One-dimensional π-d conjugated coordination polymers: synthesis and their improved memory performance. Sci China Chem 2019. [DOI: 10.1007/s11426-018-9447-4] [Citation(s) in RCA: 15] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 10/27/2022]
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38
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Wu NM, Ng M, Yam VW. Photochromic Benzo[
b
]phosphole Alkynylgold(I) Complexes with Mechanochromic Property to Serve as Multistimuli‐Responsive Materials. Angew Chem Int Ed Engl 2019; 58:3027-3031. [DOI: 10.1002/anie.201806272] [Citation(s) in RCA: 72] [Impact Index Per Article: 14.4] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 05/31/2018] [Revised: 06/30/2018] [Indexed: 11/09/2022]
Affiliation(s)
- Nathan Man‐Wai Wu
- Institute of Molecular Functional Materials, Areas of Excellence Scheme, University Grants Committee (Hong Kong) andDepartment of ChemistryThe University of Hong Kong Pokfulam Road Hong Kong P. R. China
| | - Maggie Ng
- Institute of Molecular Functional Materials, Areas of Excellence Scheme, University Grants Committee (Hong Kong) andDepartment of ChemistryThe University of Hong Kong Pokfulam Road Hong Kong P. R. China
| | - Vivian Wing‐Wah Yam
- Institute of Molecular Functional Materials, Areas of Excellence Scheme, University Grants Committee (Hong Kong) andDepartment of ChemistryThe University of Hong Kong Pokfulam Road Hong Kong P. R. China
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39
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Mo JP, Hashemi L, He JL, Feng WL, Yin Y, Zhang WB, Li XH, Xiao HP, Morsali A. Crystal structure, thermal stability and photoluminesence properties of five new Zn(II) coordination polymers constructed from mixed ligand; N-donor pyridine ligands and bis(4-carboxylphenyl)phosphinic acid. J Mol Struct 2019. [DOI: 10.1016/j.molstruc.2018.11.007] [Citation(s) in RCA: 5] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 10/27/2022]
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40
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Haque A, Al-Balushi RA, Al-Busaidi IJ, Khan MS, Raithby PR. Rise of Conjugated Poly-ynes and Poly(Metalla-ynes): From Design Through Synthesis to Structure-Property Relationships and Applications. Chem Rev 2018; 118:8474-8597. [PMID: 30112905 DOI: 10.1021/acs.chemrev.8b00022] [Citation(s) in RCA: 109] [Impact Index Per Article: 18.2] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 02/08/2023]
Abstract
Conjugated poly-ynes and poly(metalla-ynes) constitute an important class of new materials with potential application in various domains of science. The key factors responsible for the diverse usage of these materials is their intriguing and tunable chemical and photophysical properties. This review highlights fascinating advances made in the field of conjugated organic poly-ynes and poly(metalla-ynes) incorporating group 4-11 metals. This includes several important aspects of conjugated poly-ynes viz. synthetic protocols, bonding, electronic structure, nature of luminescence, structure-property relationships, diverse applications, and concluding remarks. Furthermore, we delineated the future directions and challenges in this particular area of research.
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Affiliation(s)
- Ashanul Haque
- Department of Chemistry , Sultan Qaboos University , P.O. Box 36, Al-Khod 123 , Sultanate of Oman
| | - Rayya A Al-Balushi
- Department of Chemistry , Sultan Qaboos University , P.O. Box 36, Al-Khod 123 , Sultanate of Oman
| | - Idris Juma Al-Busaidi
- Department of Chemistry , Sultan Qaboos University , P.O. Box 36, Al-Khod 123 , Sultanate of Oman
| | - Muhammad S Khan
- Department of Chemistry , Sultan Qaboos University , P.O. Box 36, Al-Khod 123 , Sultanate of Oman
| | - Paul R Raithby
- Department of Chemistry , University of Bath , Claverton Down , Bath BA2 7AY , U.K
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41
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Photochromic Benzo[
b
]phosphole Alkynylgold(I) Complexes with Mechanochromic Property to Serve as Multistimuli‐Responsive Materials. Angew Chem Int Ed Engl 2018. [DOI: 10.1002/ange.201806272] [Citation(s) in RCA: 13] [Impact Index Per Article: 2.2] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/12/2022]
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42
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Li X, Hong EYH, Chan AKW, Poon CT, Li B, Wu L, Yam VWW. Amphiphilic Carbazole-Containing Compounds with Lower Critical Solution Temperature Behavior for Supramolecular Self-Assembly and Solution-Processable Resistive Memories. Chem Asian J 2018; 13:2626-2631. [PMID: 30094922 DOI: 10.1002/asia.201800615] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 04/20/2018] [Indexed: 12/12/2022]
Abstract
The self-organization and resistive memory performances of a series of newly synthesized water-soluble amphiphilic carbazole derivatives have been explored. Temperature-dependent UV/Vis absorption spectroscopy has been conducted to study the isodesmic self-assembly mechanism of the carbazole-containing compounds. This class of compounds also exhibits interesting lower critical solution temperature properties, which are sensitive to concentration and ionic additives. One of the compounds has been solution-processed and utilized as an active material in the engineering of resistive memory devices, exhibiting a switching voltage of about 3.9 V, a constant ON/OFF current ratio of 106 , and a long retention time of 104 s. The present work demonstrates the versatile potential applications of water-soluble amphiphilic carbazole-containing compounds in supramolecular chemistry and resistive memory devices.
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Affiliation(s)
- Xiaoying Li
- State Key Laboratory of Supramolecular Structure, and Materials and College of Chemistry, Jilin University, Changchun, 130012, P. R. China.,Institute of Molecular Functional Materials [Areas of Excellence, Scheme University Grant Committee (Hong Kong)], and Department of Chemistry, The University of Hong Kong, Pokfulam Road, Hong Kong, P. R. China
| | - Eugene Yau-Hin Hong
- Institute of Molecular Functional Materials [Areas of Excellence, Scheme University Grant Committee (Hong Kong)], and Department of Chemistry, The University of Hong Kong, Pokfulam Road, Hong Kong, P. R. China
| | - Alan Kwun-Wa Chan
- Institute of Molecular Functional Materials [Areas of Excellence, Scheme University Grant Committee (Hong Kong)], and Department of Chemistry, The University of Hong Kong, Pokfulam Road, Hong Kong, P. R. China
| | - Chun-Ting Poon
- Institute of Molecular Functional Materials [Areas of Excellence, Scheme University Grant Committee (Hong Kong)], and Department of Chemistry, The University of Hong Kong, Pokfulam Road, Hong Kong, P. R. China
| | - Bao Li
- State Key Laboratory of Supramolecular Structure, and Materials and College of Chemistry, Jilin University, Changchun, 130012, P. R. China
| | - Lixin Wu
- State Key Laboratory of Supramolecular Structure, and Materials and College of Chemistry, Jilin University, Changchun, 130012, P. R. China
| | - Vivian Wing-Wah Yam
- State Key Laboratory of Supramolecular Structure, and Materials and College of Chemistry, Jilin University, Changchun, 130012, P. R. China.,Institute of Molecular Functional Materials [Areas of Excellence, Scheme University Grant Committee (Hong Kong)], and Department of Chemistry, The University of Hong Kong, Pokfulam Road, Hong Kong, P. R. China
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43
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San Sebastian E, Rodríguez-Diéguez A, Seco JM, Cepeda J. Coordination Polymers with Intriguing Photoluminescence Behavior: The Promising Avenue for Greatest Long-Lasting Phosphors. Eur J Inorg Chem 2018. [DOI: 10.1002/ejic.201800124] [Citation(s) in RCA: 28] [Impact Index Per Article: 4.7] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 02/03/2023]
Affiliation(s)
- Eider San Sebastian
- Departamento de Química Aplicada; Facultad de Química; Universidad del Pais Vasco (UPV/EHU); 20018 Donostia Spain
| | - Antonio Rodríguez-Diéguez
- Departamento de Química Inorgánica; Facultad de Ciencias; Universidad de Granada; 18071 Granada Spain
| | - Jose M. Seco
- Departamento de Química Aplicada; Facultad de Química; Universidad del Pais Vasco (UPV/EHU); 20018 Donostia Spain
| | - Javier Cepeda
- Departamento de Química Aplicada; Facultad de Química; Universidad del Pais Vasco (UPV/EHU); 20018 Donostia Spain
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44
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Wang C, Fukazawa A, Tanabe Y, Inai N, Yokogawa D, Yamaguchi S. Water-Soluble Phospholo[3,2-b
]phosphole-P
,P
′-Dioxide-Based Fluorescent Dyes with High Photostability. Chem Asian J 2018; 13:1616-1624. [DOI: 10.1002/asia.201800533] [Citation(s) in RCA: 19] [Impact Index Per Article: 3.2] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 04/09/2018] [Indexed: 12/16/2022]
Affiliation(s)
- Chenguang Wang
- Institute of Transformative Bio-Molecules (WPI-ITbM); Nagoya University; Furo-cho, Chikusa-ku Nagoya 464-8602 Japan
| | - Aiko Fukazawa
- Department of Chemistry; Graduate School of Science and Integrated Research Consortium on Chemical Sciences (IRCCS); Nagoya University; Furo-cho, Chikusa-ku Nagoya 464-8602 Japan
| | - Yoshiyuki Tanabe
- Department of Chemistry; Graduate School of Science and Integrated Research Consortium on Chemical Sciences (IRCCS); Nagoya University; Furo-cho, Chikusa-ku Nagoya 464-8602 Japan
| | - Naoto Inai
- Department of Chemistry; Graduate School of Science and Integrated Research Consortium on Chemical Sciences (IRCCS); Nagoya University; Furo-cho, Chikusa-ku Nagoya 464-8602 Japan
| | - Daisuke Yokogawa
- Institute of Transformative Bio-Molecules (WPI-ITbM); Nagoya University; Furo-cho, Chikusa-ku Nagoya 464-8602 Japan
- Department of Chemistry; Graduate School of Science and Integrated Research Consortium on Chemical Sciences (IRCCS); Nagoya University; Furo-cho, Chikusa-ku Nagoya 464-8602 Japan
| | - Shigehiro Yamaguchi
- Institute of Transformative Bio-Molecules (WPI-ITbM); Nagoya University; Furo-cho, Chikusa-ku Nagoya 464-8602 Japan
- Department of Chemistry; Graduate School of Science and Integrated Research Consortium on Chemical Sciences (IRCCS); Nagoya University; Furo-cho, Chikusa-ku Nagoya 464-8602 Japan
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45
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Serra J, Font P, Sosa Carrizo ED, Mallet-Ladeira S, Massou S, Parella T, Miqueu K, Amgoune A, Ribas X, Bourissou D. Cyclometalated gold(iii) complexes: noticeable differences between (N,C) and (P,C) ligands in migratory insertion. Chem Sci 2018; 9:3932-3940. [PMID: 29780525 PMCID: PMC5941201 DOI: 10.1039/c7sc04899h] [Citation(s) in RCA: 27] [Impact Index Per Article: 4.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 11/14/2017] [Accepted: 03/21/2018] [Indexed: 12/12/2022] Open
Abstract
Gold(iii) complexes are garnering increasing interest for opto-electronic, therapeutic and catalytic applications.
Gold(iii) complexes are garnering increasing interest for opto-electronic, therapeutic and catalytic applications. But so far, very little is known about the factors controlling their reactivity and the very influence of the ancillary ligand. This article reports the first comprehensive study on this topic. The reactivity of a cationic (N,C) gold(iii) complex, namely 1A, towards ethylene has been thoroughly studied and compared with that of the related (P,C) complex 1C. A cationic gold(iii) complex 5A resulting from double insertion of ethylene was selectively obtained. Complex 5A was found to be remarkably stable. It was trapped with chloride and fully characterized. In marked contrast to that observed with 1C, no β-H elimination or linear-to-branched rearrangement of the alkyl chain occurred with 1A. The energy profile for the reactions of 1A with ethylene has been comprehensively investigated computationally, and the influence of the ancillary ligand has been precisely delineated. Because nitrogen is a weaker donor than carbon (and phosphorus), the (N,C) ligand is very electronically dissymmetric, much more than the (P,C) ligand. This makes the two reactive sites at gold quite different, which noticeably influences the competition between migratory insertion and β-H elimination, and actually changes the outcome of the olefin insertion at gold. This study provides valuable insight into the influence of ancillary ligands on gold(iii) reactivity, something critical to further develop Au(iii) and Au(i)/Au(iii) catalysis.
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Affiliation(s)
- Jordi Serra
- QBIS-CAT Group , Institut de Química Computacional i Catàlisi (IQCC) , Departament de Química , Universitat de Girona , Campus Montilivi , Girona , E-17003 , Catalonia , Spain .
| | - Pau Font
- QBIS-CAT Group , Institut de Química Computacional i Catàlisi (IQCC) , Departament de Química , Universitat de Girona , Campus Montilivi , Girona , E-17003 , Catalonia , Spain .
| | - E Daiann Sosa Carrizo
- CNRS/UNIV PAU & PAYS ADOUR , Institut des Sciences Analytiques et de Physico-Chimie pour l'Environnement et les Matériaux (IPREM, UMR 5254) , Hélioparc , 2 Avenue du Président Angot , 64053 Pau Cedex 09 , France
| | - Sonia Mallet-Ladeira
- Institut de Chimie de Toulouse (FR 2599) , 118 Route de Narbonne , 31062 Toulouse Cedex 09 , France
| | - Stéphane Massou
- Institut de Chimie de Toulouse (FR 2599) , 118 Route de Narbonne , 31062 Toulouse Cedex 09 , France
| | - Teodor Parella
- Servei de RMN , Facultat de Ciències , Universitat Autonòma de Barcelona , Campus UAB , Bellaterra E-08193 , Catalonia , Spain
| | - Karinne Miqueu
- CNRS/UNIV PAU & PAYS ADOUR , Institut des Sciences Analytiques et de Physico-Chimie pour l'Environnement et les Matériaux (IPREM, UMR 5254) , Hélioparc , 2 Avenue du Président Angot , 64053 Pau Cedex 09 , France
| | - Abderrahmane Amgoune
- CNRS , Université Paul Sabatier , Laboratoire Hétérochimie Fondamentale Appliquée (LHFA, UMR 5069) , 118 Route de Narbonne , 31062 Toulouse Cedex 09 , France .
| | - Xavi Ribas
- QBIS-CAT Group , Institut de Química Computacional i Catàlisi (IQCC) , Departament de Química , Universitat de Girona , Campus Montilivi , Girona , E-17003 , Catalonia , Spain .
| | - Didier Bourissou
- CNRS , Université Paul Sabatier , Laboratoire Hétérochimie Fondamentale Appliquée (LHFA, UMR 5069) , 118 Route de Narbonne , 31062 Toulouse Cedex 09 , France .
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46
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Li L, Wen D. Memristic Characteristics from Bistable to Tristable Memory with Controllable Charge Trap Carbon Nanotubes. NANOMATERIALS (BASEL, SWITZERLAND) 2018; 8:E114. [PMID: 29462989 PMCID: PMC5853745 DOI: 10.3390/nano8020114] [Citation(s) in RCA: 10] [Impact Index Per Article: 1.7] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 01/12/2018] [Revised: 02/11/2018] [Accepted: 02/13/2018] [Indexed: 02/02/2023]
Abstract
The incorporation of the one-dimensional carbon nanomaterial carbon nanotubes (CNTs) in poly(methyl methacrylate) (PMMA) was found to successfully develop a resistive switching. It implements memristic characteristics which shift from bistable to tristable memory. The localized current pathways in the organic nanocomposite layers for each intermediate resistive state (IRS) are attributed to the trapping mechanism consistent with the fluorescent measurements. Multi-bit organic memories have attracted considerable interest, which provide an effective way to increase the memory density per unit cell area. This study will be useful for the development and tuning of multi-bit storable organic nanocomposite memory device systems.
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Affiliation(s)
- Lei Li
- Key Laboratories of Senior-Education for Electronic Engineering, Harbin 150080, China.
| | - Dianzhong Wen
- Key Laboratories of Senior-Education for Electronic Engineering, Harbin 150080, China.
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47
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Cheung AFF, Hong EYH, Yam VWW. Supramolecular Assembly of Phosphole Oxide Based Alkynylplatinum(II) 2,6-Bis(N-alkylbenzimidazol-2'-yl)pyridine Complexes-An Interplay of Hydrophobicity and Aromatic π-Surfaces. Chemistry 2018; 24:1383-1393. [PMID: 29266490 DOI: 10.1002/chem.201704110] [Citation(s) in RCA: 11] [Impact Index Per Article: 1.8] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 09/01/2017] [Indexed: 01/27/2023]
Abstract
A new class of phosphole oxide based alkynylplatinum(II) 2,6-bis(N-alkylbenzimidazol-2'-yl)pyridine (bzimpy) complexes were synthesized and characterized. Their self-assembly was driven by hydrophobic-hydrophobic and π-π stacking interactions. The self-assembly properties were also investigated by UV/Vis absorption spectroscopy, which revealed that the alkyl-chain length of the bzimpy moiety and the π-surface area of the alkynyl ligand have significant influence on the overall self-assembly process. The alkyl-chain length also affected the morphological structures of the aggregates, which were studied by transmission electron microscopy and scanning electron microscopy.
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Affiliation(s)
- Andy Fu-Fai Cheung
- Institute of Molecular Functional Materials and Department of Chemistry, The University of Hong Kong, Pokfulam Road, Hong Kong, China
| | - Eugene Yau-Hin Hong
- Institute of Molecular Functional Materials and Department of Chemistry, The University of Hong Kong, Pokfulam Road, Hong Kong, China
| | - Vivian Wing-Wah Yam
- Institute of Molecular Functional Materials and Department of Chemistry, The University of Hong Kong, Pokfulam Road, Hong Kong, China
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48
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Song B, Wang H, Zhong Y, Chu B, Su Y, He Y. Fluorescent and magnetic anti-counterfeiting realized by biocompatible multifunctional silicon nanoshuttle-based security ink. NANOSCALE 2018; 10:1617-1621. [PMID: 29327009 DOI: 10.1039/c7nr06337g] [Citation(s) in RCA: 55] [Impact Index Per Article: 9.2] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/07/2023]
Abstract
Herein, we present the first example of a silicon nanoshuttle-based security ink simultaneously featuring attractive optical and magnetic properties, suitable for fluorescent and magnetic anti-counterfeiting and encryption. Significantly, the information can be dual-encrypted through multi-color fluorescence and longitudinal (T1)/transverse (T2) relaxation contrast by using the silicon nanoshuttle-based security ink. We further demonstrate the feasibility of this high-performance ink for practical application in banknote anti-counterfeiting.
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Affiliation(s)
- Bin Song
- Laboratory of Nanoscale Biochemical Analysis, Jiangsu Key Laboratory for Carbon-Based Functional Materials and Devices, Institute of Functional Nano & Soft Materials (FUNSOM), and Collaborative Innovation Center of Suzhou Nano Science and Technology (NANO-CIC), Soochow University, Suzhou, Jiangsu 215123, China.
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49
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Goswami S, Matula AJ, Rath SP, Hedström S, Saha S, Annamalai M, Sengupta D, Patra A, Ghosh S, Jani H, Sarkar S, Motapothula MR, Nijhuis CA, Martin J, Goswami S, Batista VS, Venkatesan T. Robust resistive memory devices using solution-processable metal-coordinated azo aromatics. NATURE MATERIALS 2017; 16:1216-1224. [PMID: 29058729 DOI: 10.1038/nmat5009] [Citation(s) in RCA: 115] [Impact Index Per Article: 16.4] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/14/2017] [Accepted: 09/15/2017] [Indexed: 06/07/2023]
Abstract
Non-volatile memories will play a decisive role in the next generation of digital technology. Flash memories are currently the key player in the field, yet they fail to meet the commercial demands of scalability and endurance. Resistive memory devices, and in particular memories based on low-cost, solution-processable and chemically tunable organic materials, are promising alternatives explored by the industry. However, to date, they have been lacking the performance and mechanistic understanding required for commercial translation. Here we report a resistive memory device based on a spin-coated active layer of a transition-metal complex, which shows high reproducibility (∼350 devices), fast switching (≤30 ns), excellent endurance (∼1012 cycles), stability (>106 s) and scalability (down to ∼60 nm2). In situ Raman and ultraviolet-visible spectroscopy alongside spectroelectrochemistry and quantum chemical calculations demonstrate that the redox state of the ligands determines the switching states of the device whereas the counterions control the hysteresis. This insight may accelerate the technological deployment of organic resistive memories.
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Affiliation(s)
- Sreetosh Goswami
- NUSNNI-NanoCore, National University of Singapore, Singapore 117411, Singapore
- NUS Graduate School for Integrative Science and Engineering, National University of Singapore, Singapore 117456, Singapore
| | - Adam J Matula
- Department of Chemistry, Yale University, New Haven, Connecticut 06520, USA
| | - Santi P Rath
- Department of Inorganic Chemistry, Indian Association for the Cultivation of Science (IACS), Jadavpur, Kolkata 700032, India
| | - Svante Hedström
- Department of Chemistry, Yale University, New Haven, Connecticut 06520, USA
| | - Surajit Saha
- NUSNNI-NanoCore, National University of Singapore, Singapore 117411, Singapore
| | - Meenakshi Annamalai
- NUSNNI-NanoCore, National University of Singapore, Singapore 117411, Singapore
| | - Debabrata Sengupta
- Department of Inorganic Chemistry, Indian Association for the Cultivation of Science (IACS), Jadavpur, Kolkata 700032, India
| | - Abhijeet Patra
- NUSNNI-NanoCore, National University of Singapore, Singapore 117411, Singapore
- NUS Graduate School for Integrative Science and Engineering, National University of Singapore, Singapore 117456, Singapore
| | - Siddhartha Ghosh
- NUSNNI-NanoCore, National University of Singapore, Singapore 117411, Singapore
| | - Hariom Jani
- NUSNNI-NanoCore, National University of Singapore, Singapore 117411, Singapore
- NUS Graduate School for Integrative Science and Engineering, National University of Singapore, Singapore 117456, Singapore
| | - Soumya Sarkar
- NUSNNI-NanoCore, National University of Singapore, Singapore 117411, Singapore
- NUS Graduate School for Integrative Science and Engineering, National University of Singapore, Singapore 117456, Singapore
| | | | - Christian A Nijhuis
- Department of Chemistry, National University of Singapore, Singapore 117543, Singapore
- Centre for Advanced 2D Materials, National University of Singapore, Singapore 117546, Singapore
| | - Jens Martin
- Centre for Advanced 2D Materials, National University of Singapore, Singapore 117546, Singapore
- Department of Physics, National University of Singapore, Singapore 117542, Singapore
| | - Sreebrata Goswami
- Department of Inorganic Chemistry, Indian Association for the Cultivation of Science (IACS), Jadavpur, Kolkata 700032, India
| | - Victor S Batista
- Department of Chemistry, Yale University, New Haven, Connecticut 06520, USA
| | - T Venkatesan
- NUSNNI-NanoCore, National University of Singapore, Singapore 117411, Singapore
- NUS Graduate School for Integrative Science and Engineering, National University of Singapore, Singapore 117456, Singapore
- Department of Physics, National University of Singapore, Singapore 117542, Singapore
- Department of Electrical and Computer Engineering, National University of Singapore, Singapore 117583, Singapore
- Materials Science and Engineering Department, National University of Singapore, Singapore 117575, Singapore
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50
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Tang JH, Sun TG, Shao JY, Gong ZL, Zhong YW. Resistive memory devices based on a triphenylamine-decorated non-precious cobalt(ii) bis-terpyridine complex. Chem Commun (Camb) 2017; 53:11925-11928. [PMID: 29044252 DOI: 10.1039/c7cc05806c] [Citation(s) in RCA: 20] [Impact Index Per Article: 2.9] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/31/2022]
Abstract
The ITO/active material/Au sandwiched devices of a cobalt(ii) bis-terpyridine complex decorated with two triphenylamine motifs display appealing flash-type resistive switching with a large ON/OFF ratio (>103) and low operating voltages (<±3 V). In contrast, devices with the triphenylamine-appended terpyridine ligand show WORM-type memory behaviour.
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Affiliation(s)
- Jian-Hong Tang
- CAS Key Laboratory of Photochemistry, CAS Research/Education Centre for Excellence in Molecular Sciences, Institute of Chemistry, Chinese Academy of Sciences, Beijing 100190, China.
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