Enhanced Superconductivity in Restacked TaS2 Nanosheets

Impact of Correlated Disorder on Surface Superconductivity: Revealing the Robustness of the Surface Ordering Effect

Surface superconductivity, wherein electron pairing occurs at material surfaces or interfaces, has attracted a remarkable amount of attention since its discovery. Recent theoretical predictions have unveiled increased critical temperatures, especially at the surfaces of certain compounds and/or structures. The notion of "surface ordering" has been advanced to elucidate this phenomenon. Employing the framework of self-consistent Bogoliubov-de Gennes equations and a model incorporating correlated disorder, our study demonstrates the persistence of the surface ordering effect in the presence of weak to moderate bulk disorder. Intriguingly, our findings indicate that under moderate disorder conditions the surface critical temperature can be further increased, depending on the intensity and correlation of the disorder.

Abnormal Metal-Semiconductor-Like Transition and Exceptional Enhanced Superconducting State in Pressurized Restacked TaS2

Interlayer coupling and stacking order play essential roles in shaping the exotic electronic properties of two-dimensional materials. Here, we employ restacked TaS₂─a novel transition metal dichalcogenide (TMD) with weak vdW bonding and twisted angles─to investigate the strain effects of interlayer modulation on the electronic properties. Under pressure, an unexpected transition from metallic to semiconducting-like states occurs. Superconductivity coexists with the semiconducting-like state over a wide pressure range, which has never before been observed in TMDs. Upon further compression, a new superconducting SC-II state emerges without structural evolution and gradually replaces the initial SC-I state. The emerging SC-II state exhibits robust zero-resistance superconductivity and an ultrahigh upper critical field. The abundant electronic state changes in RS-TaS₂ are strongly related to band-structure engineering resulting from pressure-induced interlayer stacking angle modulation. Our results reveal the remarkable effect of interlayer rearrangement on electronic properties and provide a special way to explore the unique properties of 2D materials.

Effect of Material-Dependent Boundaries on the Interference Induced Enhancement of the Surface Superconductivity Temperature

Using the tight-binding Bogoliubov-de Gennes formalism, we describe the influence of the surface potential on the superconducting critical temperature at the surface. Surface details are taken into account within the framework of the self-consistent Lang-Kohn effective potential. The regimes of strong and weak coupling of superconducting correlations are considered. Our study reveals that, although the enhancement of the surface critical temperature, originating from the enhancement of the localized correlation due to the constructive interference between quasiparticle bulk orbits, can be sufficiently affected by the surface potential, this influence, nonetheless, strongly depends on the bulk material parameters, such as the effective electron density parameter and Fermi energy, and is likely to be negligible for some materials, in particular for narrow-band metals. Thus, superconducting properties of a surface can be controlled by the surface/interface potential properties, which offer an additional tuning knob for the superconducting state at the surface/interface.

Regulating the Electrical and Mechanical Properties of TaS2 Films via van der Waals and Electrostatic Interaction for High Performance Electromagnetic Interference Shielding

Low-dimensional transition metal dichalcogenides (TMDs) have unique electronic structure, vibration modes, and physicochemical properties, making them suitable for fundamental studies and cutting-edge applications such as silicon electronics, optoelectronics, and bioelectronics. However, the brittleness, low toughness, and poor mechanical and electrical stabilities of TMD-based films limit their application. Herein, a TaS2 freestanding film with ultralow void ratio of 6.01% is restacked under the effect of bond-free van der Waals (vdW) interactions within the staggered 2H-TaS2 nanosheets. The restacked films demonstrated an exceptionally high electrical conductivity of 2,666 S cm-1, electromagnetic interference shielding effectiveness (EMI SE) of 41.8 dB, and absolute EMI SE (SSE/t) of 27,859 dB cm2 g-1, which is the highest value reported for TMD-based materials. The bond-free vdW interactions between the adjacent 2H-TaS2 nanosheets provide a natural interfacial strain relaxation, achieving excellent flexibility without rupture after 1,000 bends. In addition, the TaS2 nanosheets are further combined with the polymer fibers of bacterial cellulose and aramid nanofibers via electrostatic interactions to significantly enhance the tensile strength and flexibility of the films while maintaining their high electrical conductivity and EMI SE.This work provides promising alternatives for conventional materials used in EMI shielding and nanodevices.

Synthesis of an aqueous, air-stable, superconducting 1T'-WS2 monolayer ink

Liquid-phase chemical exfoliation can achieve industry-scale production of two-dimensional (2D) materials for a wide range of applications. However, many 2D materials with potential applications in quantum technologies often fail to leave the laboratory setting because of their air sensitivity and depreciation of physical performance after chemical processing. We report a simple chemical exfoliation method to create a stable, aqueous, surfactant-free, superconducting ink containing phase-pure 1T'-WS₂ monolayers that are isostructural to the air-sensitive topological insulator 1T'-WTe₂. The printed film is metallic at room temperature and superconducting below 7.3 kelvin, shows strong anisotropic unconventional superconducting behavior with an in-plane and out-of-plane upper critical magnetic field of 30.1 and 5.3 tesla, and is stable at ambient conditions for at least 30 days. Our results show that chemical processing can make nontrivial 2D materials that were formerly only studied in laboratories commercially accessible.

Beyond the Platinum Era─Scalable Preparation and Electrochemical Activation of TaS2 Flakes

Among 2D materials, transition-metal dichalcogenides (TMDCs) of group 5 metals recently have attracted substantial interest due to their superior electrocatalytic activity toward hydrogen evolution reaction (HER). However, a straightforward and efficient synthesis of the TMDCs which can be easily scaled up is missing. Herein, we report an innovative, simple, and scalable method for tantalum disulfide (TaS₂) synthesis, involving CS₂ as a sulfurizing agent and Ta₂O₅ as a metal precursor. The structure of the created TaS₂ flakes was analyzed by Raman, XRD, XPS, SEM, and HRTEM techniques. It was demonstrated that a tuning between 1T (metallic) and 3R (semiconductor) TaS₂ phases can be accomplished by varying the reaction conditions. The created materials were tested for HER, and the electrocatalytic activity of both phases was significantly enhanced by electrochemical self-activation, up to that comparable with the Pt one. The final values of the Tafel slopes of activated TaS₂ were found to be 35 and 43 mV/dec for 3R-TaS₂ and 1T-TaS₂, respectively, with the corresponding overpotentials of 63 and 109 mV required to reach a current density of 10 mA/cm². We also investigated the mechanism of flake activation, which can be attributed to the changes in the flake morphology and surface chemistry. Our work provides a scalable and simple synthesis method to produce transition-metal sulfides which could replace the platinum catalyst in water splitting technology.

Nanoscale Friction across the First-Order Charge Density Wave Phase Transition of 1T-TaS2

Nanotribology using atomic force microscopy (AFM) can be considered as a unique approach to analyze phase transition materials by localized mechanical interaction. In this work, we investigate friction on the lamellar transition metal dichalcogenide 1T-TaS₂, which can undergo first-order charge density wave (CDW) phase transitions. Based on temperature-dependent atomic force microscopy under ultrahigh vacuum conditions (UHV), we can characterize the general friction levels across the first-order phase transitions and for the different phases. While structural and electronic properties for different phases appear to be of minor influence on friction, a distinct peak in friction is observed during the phase transition when cooling the sample from the nearly commensurate CDW (NC-CDW) phase to the commensurate CDW (C-CDW) phase. By performing systematic measurements as a function of load, scan velocity, and scan time, a recently proposed friction mechanism can be corroborated, where the AFM tip gradually induces local transformations of the material close to the spinodal point in a thermally activated and shear-assisted process until the surface is fully "harvested". Our results demonstrate that repeated nanomechanical stress can trigger local first-order phase transitions constituting a so far little explored mechanical energy dissipation channel.

Host-Guest Intercalation Chemistry for the Synthesis and Modification of Two-Dimensional Transition Metal Dichalcogenides

Intercalation chemistry is of great importance in solid-state physics and chemistry for the ability to modulate electronic structures for constructing new materials with exotic properties. This ancient and versatile discipline has recently become prevailing in the synthesis and regulation of 2D transition metal dichalcogenides (TMDs) with atomic thickness due to diverse host-guest configurations and their impact on layered frameworks, which bring in extensive applications in electronics, optoelectronics, and other energy-based devices. In order to prepare 2D TMD materials with desired structure and properties, it is essential to gain in-depth understanding of the key role the intercalation chemistry plays in the preparation process. A focused review on recent advances regarding 2D TMD materials through intercalation exfoliation from the view of host, guest, and solvent interactions is provided. The effect of intercalation chemistry on TMD nanosheets synthesis and modification is comprehensively reviewed. The interactions between host and guest from the aspects of lattice strain, interlayer distance, and carrier density are considered. Finally, a prospectus of the future research opportunities for the intercalation chemistry of 2D materials is provided.

Chiral molecular intercalation superlattices

The discovery of chiral-induced spin selectivity (CISS) opens up the possibility to manipulate spin orientation without external magnetic fields and enables new spintronic device designs^1-4. Although many approaches have been explored for introducing CISS into solid-state materials and devices, the resulting systems so far are often plagued by high inhomogeneity, low spin selectivity or limited stability, and have difficulties in forming robust spintronic devices^5-8. Here we report a new class of chiral molecular intercalation superlattices (CMIS) as a robust solid-state chiral material platform for exploring CISS. The CMIS were prepared by intercalating layered two-dimensional atomic crystals (2DACs) (such as TaS₂ and TiS₂) with selected chiral molecules (such as R-α-methylbenzylamine and S-α-methylbenzylamine). The X-ray diffraction and transmission electron microscopy studies demonstrate highly ordered superlattice structures with alternating crystalline atomic layers and self-assembled chiral molecular layers. Circular dichroism studies show clear chirality-dependent signals between right-handed (R-) and left-handed (S-) CMIS. Furthermore, by using the resulting CMIS as the spin-filtering layer, we create spin-selective tunnelling junctions with a distinct chirality-dependent tunnelling current, achieving a tunnelling magnetoresistance ratio of more than 300 per cent and a spin polarization ratio of more than 60 per cent. With a large family of 2DACs of widely tunable electronic properties and a vast selection of chiral molecules of designable structural motifs, the CMIS define a rich family of artificial chiral materials for investigating the CISS effect and capturing its potential for new spintronic devices.

Record-High Superconductivity in Transition Metal Dichalcogenides Emerged in Compressed 2H-TaS2

Pressure has always been an effective method for uncovering novel phenomena and properties in condensed matter physics. Here, an electrical transport study is carried on 2H-TaS₂ up to ≈208 GPa, and an unexpected superconducting state (SC-II) emerging around 86.1 GPa with an initial critical temperature (T_c ) of 9.6 K is found. As pressure increases, the T_c enhances rapidly and reaches a maximum of 16.4 K at 157.4 GPa, which sets a new record for transition metal dichalcogenides (TMDs). The original superconducting state (SC-I) is found to be re-enhanced above 100 GPa after the recession around 10 GPa, and coexists with SC-II to the highest pressure applied in this work. In situ high-pressure X-ray diffraction and Hall effect measurements reveal that the occurrence of SC-II is accompanied by a structural modification and a concurrent enhancement of hole carrier density. The new high-T_c superconducting state in 2H-TaS₂ can be attributed to the change of the electronic states near the Fermi surface, owing to pressure-induced interlayer modulation. It is the first time finding this remarkable superconducting state in TMDs, which not only brings a new broad of perspective on layered materials but also expands the field of pressure-modified superconductivity.

Pathak A, Novikov D, Leitus G, Kaplan-Ashiri I, Kolíbal M, Enyashin AN, Houben L, Tenne R. Nanotubes from the Misfit Layered Compound (SmS)1.19TaS2: Atomic Structure, Charge Transfer, and Electrical Properties

Misfit layered compounds (MLCs) MX-TX₂, where M, T = metal atoms and X = S, Se, or Te, and their nanotubes are of significant interest due to their rich chemistry and unique quasi-1D structure. In particular, LnX-TX₂ (Ln = rare-earth atom) constitute a relatively large family of MLCs, from which nanotubes have been synthesized. The properties of MLCs can be tuned by the chemical and structural interplay between LnX and TX₂ sublayers and alloying of each of the Ln, T, and X elements. In order to engineer them to gain desirable performance, a detailed understanding of their complex structure is indispensable. MLC nanotubes are a relative newcomer and offer new opportunities. In particular, like WS₂ nanotubes before, the confinement of the free carriers in these quasi-1D nanostructures and their chiral nature offer intriguing physical behavior. High-resolution transmission electron microscopy in conjunction with a focused ion beam are engaged to study SmS-TaS₂ nanotubes and their cross-sections at the atomic scale. The atomic resolution images distinctly reveal that Ta is in trigonal prismatic coordination with S atoms in a hexagonal structure. Furthermore, the position of the sulfur atoms in both the SmS and the TaS₂ sublattices is revealed. X-ray photoelectron spectroscopy, electron energy loss spectroscopy, and X-ray absorption spectroscopy are carried out. These analyses conclude that charge transfer from the Sm to the Ta atoms leads to filling of the Ta 5d _{z ²} level, which is confirmed by density functional theory (DFT) calculations. Transport measurements show that the nanotubes are semimetallic with resistivities in the range of 10^-4 Ω·cm at room temperature, and magnetic susceptibility measurements show a superconducting transition at 4 K.

Recent progress in metal sulfide-based electron transport layers in perovskite solar cells

High-quality electron transport layers (ETLs) are essential for stable and efficient perovskite solar cells (PSCs). Metal sulfides (MSs) are considered potential candidates for ETLs due to their high carrier mobility, low cost, and favorable chemical and physical stability. The quality of the MS films plays important role in the photovoltaic performance of PSCs. However, few reports focus on the relative preparation, characteristics, and corresponding mechanisms of MS-based ETLs. In this review, MS-based ETLs are summarized according to their preparation strategies and the mechanism. We hope that this review can help others understand the intrinsic phenomena of MS-based ETLs and motivate further investigations.

Recent Advances in 2D Superconductors

The emergence of superconductivity in 2D materials has attracted much attention and there has been rapid development in recent years because of their fruitful physical properties, such as high transition temperature (T_c ), continuous phase transition, and enhanced parallel critical magnetic field (B_c ). Tremendous efforts have been devoted to exploring different physical parameters to figure out the mechanisms behind the unexpected superconductivity phenomena, including adjusting the thickness of samples, fabricating various heterostructures, tuning the carrier density by electric field and chemical doping, and so on. Here, different types of 2D superconductivity with their unique characteristics are introduced, including the conventional Bardeen-Cooper-Schrieffer superconductivity in ultrathin films, high-T_c superconductivity in Fe-based and Cu-based 2D superconductors, unconventional superconductivity in newly discovered twist-angle bilayer graphene, superconductivity with enhanced B_c , and topological superconductivity. A perspective toward this field is then proposed based on academic knowledge from the recently reported literature. The aim is to provide researchers with a clear and comprehensive understanding about the newly developed 2D superconductivity and promote the development of this field much further.

Surface/Interface Chemistry Engineering of Correlated-Electron Materials: From Conducting Solids, Phase Transitions to External-Field Response

Correlated electronic materials (CEMs) with strong electron-electron interactions are often associated with exotic properties, such as metal-insulator transition (MIT), charge density wave (CDW), superconductivity, and magnetoresistance (MR), which are fundamental to next generation condensed matter research and electronic devices. When the dimension of CEMs decreases, exposing extremely high specific surface area and enhancing electronic correlation, the surface states are equally important to the bulk phase. Therefore, surface/interface chemical interactions provide an alternative route to regulate the intrinsic properties of low-dimensional CEMs. Here, recent achievements in surface/interface chemistry engineering of low-dimensional CEMs are reviewed, using surface modification, molecule-solid interaction, and interface electronic coupling, toward modulation of conducting solids, phase transitions including MIT, CDW, superconductivity, and magnetism transition, as well as external-field response. Surface/interface chemistry engineering provides a promising strategy for exploring novel properties and functional applications in low-dimensional CEMs. Finally, the current challenge and outlook of the surface/interface engineering are also pointed out for future research development.

Atomic-Scale Edge Morphology, Stability, and Oxidation of Single-Layer 2H-TaS2

Tantalum disulphide belongs to the group of transition metal dichalcogenides (TMDs) and has attracted attention for its unique structural, electronic, and catalytic properties. Herein, we report the edge properties of single-layer 2H-TaS₂ studied by using density functional theory calculations, because the knowledge of the edge morphology, stability, and surface energy is essential for the determination of nanoparticle shapes and understanding the nature of catalytically active sites. We calculate the grand canonical potential of TaS₂ clusters having various edge morphologies to evaluate the edge energies of the Ta-edge and S-edge terminated surfaces. Under S-rich conditions, the most likely shape of TaS₂ is a deformed hexagon dominated by the Ta-edge covered by S monomers, while the triangular shape is preferred under S-poor conditions. Exposed edges of the single-layer TaS₂ are susceptible to oxidation in air because both oxygen adsorption and substitution at the edge are strongly exothermic, -0.96 and -2.20 eV for single O atom, respectively. The XPS calculation shows that specific initial steps of oxidative process (adsorption, vacancy creation, substitution) are unlikely to be distinguished in the XPS spectra due to small shift of respective binding energies, but initial edge oxidation of TaS₂ should be observable by an asymmetry of the Ta 4f doublet towards higher binding energies.

Enhanced Superconductivity in Few-Layer TaS2 due to Healing by Oxygenation

When approaching the atomically thin limit, defects and disorder play an increasingly important role in the properties of two-dimensional (2D) materials. While defects are generally thought to negatively affect superconductivity in 2D materials, here we demonstrate the contrary in the case of oxygenation of ultrathin tantalum disulfide (TaS₂). Our first-principles calculations show that incorporation of oxygen into the TaS₂ crystal lattice is energetically favorable and effectively heals sulfur vacancies typically present in these crystals, thus restoring the electronic band structure and the carrier density to the intrinsic characteristics of TaS₂. Strikingly, this leads to a strong enhancement of the electron-phonon coupling, by up to 80% in the highly oxygenated limit. Using transport measurements on fresh and aged (oxygenated) few-layer TaS₂, we found a marked increase of the superconducting critical temperature (T_c) upon aging, in agreement with our theory, while concurrent electron microscopy and electron-energy loss spectroscopy confirmed the presence of sulfur vacancies in freshly prepared TaS₂ and incorporation of oxygen into the crystal lattice with time. Our work thus reveals the mechanism by which certain atomic-scale defects can be beneficial to superconductivity and opens a new route to engineer T_c in ultrathin materials.

Flexible Foil of Hybrid TaS2 /Organic Superlattice: Fabrication and Electrical Properties

TaS₂ nanolayers with reduced dimensionality show interesting physics, such as a gate-tunable phase transition and enhanced superconductivity, among others. Here, a solution-based strategy to fabricate a large-area foil of hybrid TaS₂ /organic superlattice, where [TaS₂ ] monolayers and organic molecules alternatively stack in atomic scale, is proposed. The [TaS₂ ] layers are spatially isolated with remarkably weakened interlayer bonding, resulting in lattice vibration close to that of TaS₂ monolayers. The foil also shows excellent mechanical flexibility together with a large electrical conductivity of 1.2 × 10³ S cm^-1 and an electromagnetic interference of 31 dB, among the highest values for solution-processed thin films of graphene and inorganic graphene analogs. The solution-based strategy reported herein can add a new dimension to manipulate the structure and properties of 2D materials and provide new opportunities for flexible nanoelectronic devices.

2D Hybrid Superlattice-Based On-Chip Electrocatalytic Microdevice for in Situ Revealing Enhanced Catalytic Activity

A molecule-confined two-dimensional (2D) hybrid superlattice is emerging for uncovering the chemical properties as well as distinctive physical phenomenon arising from the interface electronic states. An efficient and convenient synthetic method represents an important precondition to implementing the superlattice in terminal applications and functional devices. Herein, we develop an approach of spontaneous molecular intercalation to obtain a TaS₂-N₂H₄ hybrid superlattice through simple solution immersion processing at room temperature. A cross-sectional high-angle annular dark field image verifies that the N₂H₄ molecules intercalate into the TaS₂ lattice, and the interlayer spacing expands approximately 1.5 times. Combining electrical transport testing and theoretical calculations, electron transfer from N₂H₄ to the S-Ta-S lattice induces enhanced superconductivity and the suppression of the order of charge density waves. Moreover, electrical and Kelvin probe force microscope measurements reveal that intercalary N₂H₄ molecules ensure that the superlattice has higher conductivity and a lower surface work function at room temperature. A 2D hybrid superlattice-based on-chip electrocatalytic microdevice was fabricated through in situ molecular intercalation to directly evaluate the catalytic performance. Benefiting from electronic state regulation, the hybrid superlattice is more active. The presented intercalation method would aid in exploring efficient catalysts and discovering fundamental 2D physics.

Tantalum disulfide quantum dots: preparation, structure, and properties

Tantalum disulfide (TaS₂) two-dimensional film material has attracted wide attention due to its unique optical and electrical properties. In this work, we report the preparation of 1 T-TaS₂ quantum dots (1 T-TaS₂ QDs) by top-down method. Herein, we prepared the TaS₂ QDs having a monodisperse grain size of around 3 nm by an effective ultrasonic liquid phase exfoliation method. Optical studies using UV-Vis, PL, and PLE techniques on the as-prepared TaS₂ QDs exhibited ultraviolet absorption at 283 nm. Furthermore, we found that dimension reduction of TaS₂ has led to a modification of the band gap, namely a transition from indirect to direct band gap, which is explained using first-principle calculations. By using quinine as reference, the fluorescence quantum yield is 45.6%. Therefore, our results suggest TaS₂ QDs have unique and extraordinary optical properties. Moreover, the low-cost, facile method of producing high quality TaS₂ QDs in this work is ideal for mass production to ensure commercial viability of devices based on this material. TaS₂ quantum dots having a monodisperse grain size of around 3 nm have been prepared by an ultrasonic liquid phase exfoliation method, it has been found that the dimension reduction of TaS₂ has led to a transition from indirect to direct band gap that results in the unique and extraordinary optical properties (PL QY: 45.6%).

Multifunctional 2H-TaS2 nanoflakes for efficient supercapacitors and electrocatalytic evolution of hydrogen and oxygen

Layered transition-metal dichalcogenides based on VIB elements have attracted substantial attention for their applications in energy storage and conversion. However, few studies have concentrated on VB element dichalcogenides. Herein, we report that trifunctional 2H-TaS2 nanoflakes exhibit high performance when applied in supercapacitors, hydrogen evolution reactions (HER) and oxygen evolution reactions (OER). Notably, TaS2 nanoflakes delivered a large volumetric capacitance (502 F cm-3 at the scan rate of 10 mV s-1) and remarkable cycling stability (over 91% after 5000 cycles). TaS2 nanoflakes also exhibited remarkable catalytic performances in HER and OER processes, showing very small overpotentials and Tafel slopes, which are far better than those of the previously reported TaS2 electrocatalysts. Furthermore, TaS2 is highly stable in both alkaline and acidic electrolyte solutions. This work offers a new concept to design VB element-based electrodes for future energy storage and conversion applications.

DC Self-Field Critical Current in Superconductor Dirac-Cone Material/Superconductor Junctions

Recently, several research groups have reported on anomalous enhancement of the self-field critical currents, Ic(sf,T), at low temperatures in superconductor/Dirac-cone material/superconductor (S/DCM/S) junctions. Some papers attributed the enhancement to the low-energy Andreev bound states arising from winding of the electronic wave function around DCM. In this paper, Ic(sf,T) in S/DCM/S junctions have been analyzed by two approaches: modified Ambegaokar-Baratoff and ballistic Titov-Beenakker models. It is shown that the ballistic model, which is traditionally considered to be a basic model to describe Ic(sf,T) in S/DCM/S junctions, is an inadequate tool to analyze experimental data from these type of junctions, while Ambegaokar-Baratoff model, which is generally considered to be a model for Ic(sf,T) in superconductor/insulator/superconductor junctions, provides good experimental data description. Thus, there is a need to develop a new model for self-field critical currents in S/DCM/S systems.

Classifying Induced Superconductivity in Atomically Thin Dirac-Cone Materials

Recently, Kayyalha et al. (Phys. Rev. Lett., 2019, 122, 047003) reported on the anomalous enhancement of the self-field critical currents (Ic (sf, T)) at low temperatures in Nb/BiSbTeSe2-nanoribbon/Nb Josephson junctions. The enhancement was attributed to the low-energy Andreev-bound states arising from the winding of the electronic wave function around the circumference of the topological insulator BiSbTeSe2 nanoribbon. It should be noted that identical enhancement in Ic (sf, T) and in the upper critical field (Bc2 (T)) in approximately the same reduced temperatures, were reported by several research groups in atomically thin junctions based on a variety of Dirac-cone materials (DCM) earlier. The analysis shows that in all these S/DCM/S systems, the enhancement is due to a new superconducting band opening. Taking into account that several intrinsic superconductors also exhibit the effect of new superconducting band(s) opening when sample thickness becomes thinner than the out-of-plane coherence length (c (0)), we reaffirm our previous proposal that there is a new phenomenon of additional superconducting band(s) opening in atomically thin films.

Hydrogen-Induced High-Temperature Superconductivity in Two-Dimensional Materials: The Example of Hydrogenated Monolayer MgB_{2}

Hydrogen-based compounds under ultrahigh pressure, such as the polyhydrides H_{3}S and LaH_{10}, superconduct through the conventional electron-phonon coupling mechanism to attain the record critical temperatures known to date. Here we exploit the intrinsic advantages of hydrogen to strongly enhance phonon-mediated superconductivity in a completely different system, namely, a two-dimensional material with hydrogen adatoms. We find that van Hove singularities in the electronic structure, originating from atomiclike hydrogen states, lead to a strong increase of the electronic density of states at the Fermi level, and thus of the electron-phonon coupling. Additionally, the emergence of high-frequency hydrogen-related phonon modes in this system boosts the electron-phonon coupling further. As a concrete example, we demonstrate the effect of hydrogen adatoms on the superconducting properties of monolayer MgB_{2}, by solving the fully anisotropic Eliashberg equations, in conjunction with a first-principles description of the electronic and vibrational states, and their coupling. We show that hydrogenation leads to a high critical temperature of 67 K, which can be boosted to over 100 K by biaxial tensile strain.

Lattice Discontinuities of 1T-TaS2 across First Order Charge Density Wave Phase Transitions

Transition metal dichalcogenides are lamellar materials which can exhibit unique and remarkable electronic behavior due to effects of electron-electron and electron-phonon coupling. Among these materials, 1T-tantalum disulfide (1T-TaS2) has spurred considerable interest, due to its multiple first order phase transitions between different charge density wave (CDW) states. In general, the basic effects of charge density wave formation in 1T-TaS2 can be attributed to in plane re-orientation of Ta-atoms during the phase transitions. Only in recent years, an increasing number of studies has also emphasized the role of interlayer interaction and stacking order as a crucial aspect to understand the specific electronic behavior of 1T-TaS2, especially for technological systems with a finite number of layers. Obviously, continuously monitoring the out of plane expansion of the sample can provide direct inside into the rearrangement of the layer structure during the phase transition. In this letter, we therefore investigate the c-axis lattice discontinuities of 1T-TaS2 by atomic force microscopy (AFM) method under ultra-high vacuum conditions. We find that the c-axis lattice experiences a sudden contraction across the nearly-commensurate CDW (NC-CDW) phase to commensurate CDW (C-CDW) phase transition during cooling, while an expansion is found during the transition from the C-CDW phase to a triclinic CDW phase during heating. Thereby our measurements reveal, how higher order C-CDW phase can favor a more dense stacking. Additionally, our measurements also show subtler effects like e.g. two expansion peaks at the start of the transitions, which can provide further insight into the mechanisms at the onset of CDW phase transitions.

Flexible Molybdenum Disulfide (MoS2) Atomic Layers for Wearable Electronics and Optoelectronics

Flexible, stretchable, and bendable materials, including inorganic semiconductors, organic polymers, graphene, and transition metal dichalcogenides (TMDs), are attracting great attention in such areas as wearable electronics, biomedical technologies, foldable displays, and wearable point-of-care biosensors for healthcare. Among a broad range of layered TMDs, atomically thin layered molybdenum disulfide (MoS₂) has been of particular interest, due to its exceptional electronic properties, including tunable bandgap and charge carrier mobility. MoS₂ atomic layers can be used as a channel or a gate dielectric for fabricating atomically thin field-effect transistors (FETs) for electronic and optoelectronic devices. This review briefly introduces the processing and spectroscopic characterization of large-area MoS₂ atomically thin layers. The review summarizes the different strategies in enhancing the charge carrier mobility and switching speed of MoS₂ FETs by integrating high-κ dielectrics, encapsulating layers, and other 2D van der Waals layered materials into flexible MoS₂ device structures. The photoluminescence (PL) of MoS₂ atomic layers has, after chemical treatment, been dramatically improved to near-unity quantum yield. Ultraflexible and wearable active-matrix organic light-emitting diode (AM-OLED) displays and wafer-scale flexible resistive random-access memory (RRAM) arrays have been assembled using flexible MoS₂ transistors. The review discusses the overall recent progress made in developing MoS₂ based flexible FETs, OLED displays, nonvolatile memory (NVM) devices, piezoelectric nanogenerators (PNGs), and sensors for wearable electronic and optoelectronic devices. Finally, it outlines the perspectives and tremendous opportunities offered by a large family of atomically thin-layered TMDs.

Transition-Metal Oxynitride: A Facile Strategy for Improving Electrochemical Capacitor Storage

The use of transition-metal oxide (TMO) as an extended-life electrochemical energy storage material remains challenging because TMO undergoes volume expansion during energy storage. In this work, a transition-metal oxynitride layer (TMON, M: Fe, Co, Ni, and V) was synthesized on TMO nanowires to address the crucial issue of volume expansion. The unique oxynitride layer possesses numerous active sites, excellent conductivity, and outstanding stability. These characteristics enhance specific capacitance and alleviate volume expansion effectively. Specifically, the specific capacity of the TMON electrode is enhanced by approximately twofold relative to that of its corresponding oxide. Notably, the capacitance of the TMON remains above 94% even after 10 000 cycles. This result indicates that the cycling performance of the TMON electrode is superior to that of its corresponding oxide. First-principles and quantitative kinetics analyses are performed to investigate the mechanism underlying the improved electrochemical performances of the TMON layers. Results demonstrate that the proposed TMON layer has attractive applications in the fields of energy storage, conversion, and beyond.

Surface-Limited Superconducting Phase Transition on 1 T-TaS2

Controlling superconducting phase transition on a two-dimensional (2D) material is of great fundamental and technological interest from the viewpoint of making 2D resistance-free electronic circuits. Here, we demonstrate that a 1 T-to-2 H phase transition can be induced on the topmost monolayer of bulk (<100 nm thick) 1 T-TaS₂ by thermal annealing. The monolayer 2 H-TaS₂ on bulk 1 T-TaS₂ exhibits a superconducting transition temperature ( T_c) of 2.1 K, which is significantly enhanced compared to that of bulk 2 H-TaS₂. Scanning tunneling microscopy measurements reveal a 3 × 3 charge density wave (CDW) in the phase-switched monolayer at 4.5 K. The enhanced T_c is explained by the suppressed 3 × 3 CDW and a charge-transfer doping from the 1 T substrate. We further show that the monolayer 2 H-TaS₂ could be switched back to 1 T phase by applying a voltage pulse. The observed surface-limited superconducting phase transition offers a convenient way to prepare robust 2D superconductivity on bulk 1 T-TaS₂ crystal, thereby bypassing the need to exfoliate monolayer samples.

Disorder Enhanced Superconductivity toward TaS2 Monolayer

Appearance of disorder is commonly known as detrimental to two-dimensional (2D) superconductivity, and typically results in decrement of the critical transition temperature ( T_c). Herein, an anomalous enhancement of superconductivity was observed in TaS₂ monolayer with function of disorder induced by structural defect. Owing to controlled pore density by acid concentration during chemical exfoliation, the disorder level in TaS₂ framework can be effectively regulated. Dome-shaped behavior was uncovered in disorder dependence of superconductivity toward the chemically functionalized TaS₂ monolayers, with T_c enhanced from 2.89 to 3.61 K when below critical disorder level. The disorder-engineered T_c enhancement, which distinctly differs from monotonic decrement in deposited 2D superconductors, can be ascribed to the increment of carrier density induced by Ta atom absence. The exotic superconducting enhancement would give help to deeply understand the correlation between superconductivity and disorder in 2D system.

Lateral Heterostructures Formed by Thermally Converting n-Type SnSe2 to p-Type SnSe

Different two-dimensional (2D) materials, when combined together to form heterostructures, can exhibit exciting properties that do not exist in individual components. Therefore, intensive research efforts have been devoted to their fabrication and characterization. Previously, vertical and in-plane 2D heterostructures have been formed by mechanical stacking and chemical vapor deposition. Here, we report a new material system that can form in-plane p-n junctions by thermal conversion of n-type SnSe₂ to p-type SnSe. Through scanning tunneling microscopy and density functional theory studies, we find that these two distinctively different lattices can form atomically sharp interfaces and have a type II to nearly type III band alignment. We also demonstrate that this method can be used to create micron-sized in-plane p-n junctions at predefined locations. These findings pave the way for further exploration of the intriguing properties of the SnSe₂-SnSe heterostructure.

Tuning Ising superconductivity with layer and spin-orbit coupling in two-dimensional transition-metal dichalcogenides

Systems simultaneously exhibiting superconductivity and spin–orbit coupling are predicted to provide a route toward topological superconductivity and unconventional electron pairing, driving significant contemporary interest in these materials. Monolayer transition-metal dichalcogenide (TMD) superconductors in particular lack inversion symmetry, yielding an antisymmetric form of spin–orbit coupling that admits both spin-singlet and spin-triplet components of the superconducting wavefunction. Here, we present an experimental and theoretical study of two intrinsic TMD superconductors with large spin–orbit coupling in the atomic layer limit, metallic 2H-TaS₂ and 2H-NbSe₂. We investigate the superconducting properties as the material is reduced to monolayer thickness and show that high-field measurements point to the largest upper critical field thus reported for an intrinsic TMD superconductor. In few-layer samples, we find the enhancement of the upper critical field is sustained by the dominance of spin–orbit coupling over weak interlayer coupling, providing additional candidate systems for supporting unconventional superconducting states in two dimensions.

Monolayer transition-metal dichalcogenide (TMD) is promising to host features of topological superconductivity. Here, de la Barrera et al. study layered compounds, 2H-TaS₂ and 2H-NbSe₂, in their atomic layer limit and find a largest upper critical field for an intrinsic TMD superconductor.

Vertical 1T-TaS2 Synthesis on Nanoporous Gold for High-Performance Electrocatalytic Applications

2D metallic TaS₂ is acting as an ideal platform for exploring fundamental physical issues (superconductivity, charge-density wave, etc.) and for engineering novel applications in energy-related fields. The batch synthesis of high-quality TaS₂ nanosheets with a specific phase is crucial for such issues. Herein, the successful synthesis of novel vertically oriented 1T-TaS₂ nanosheets on nanoporous gold substrates is reported, via a facile chemical vapor deposition route. By virtue of the abundant edge sites and excellent electrical transport property, such vertical 1T-TaS₂ is employed as high-efficiency electrocatalysts in the hydrogen evolution reaction, featured with rather low Tafel slopes ≈67-82 mV dec^-1 and an ultrahigh exchange current density ≈67.61 µA cm^-2 . The influence of phase states of 1T- and 2H-TaS₂ on the catalytic activity is also discussed with the combination of density functional theory calculations. This work hereby provides fundamental insights into the controllable syntheses and electrocatalytic applications of vertical 1T-TaS₂ nanosheets achieved through the substrate engineering.

Nano Titanium Monoxide Crystals and Unusual Superconductivity at 11 K

Nano TiO₂ is investigated intensely due to extraordinary photoelectric performances in photocatalysis, new-type solar cells, etc., but only very few synthesis and physical properties have been reported on nanostructured TiO or other low valent titanium-containing oxides. Here, a core-shell nanoparticle made of TiO core covered with a ≈5 nm shell of amorphous TiO_1+x is newly constructed via a controllable reduction method to synthesize nano TiO core and subsequent soft oxidation to form the shell (TiO_1+x ). The physical properties measurements of electrical transport and magnetism indicate these TiO@TiO_1+x nanocrystals are a type-ІІ superconductor of a recorded T_c^onset = 11 K in the binary Ti-O system. This unusual superconductivity could be attributed to the interfacial effect due to the nearly linear gradient of O/Ti ratio across the outer amorphous layer. This novel synthetic method and enhanced superconductivity could open up possibilities in interface superconductivity of nanostructured composites with well-controlled interfaces.