Approaching Topological Insulating States Leads to High Thermoelectric Performance in n-Type PbTe

Lattice Plainification Leads to High Thermoelectric Performance of P-Type PbSe Crystals

Thermoelectrics has applications in power generation and refrigeration. Since only commercial Bi2Te3 has a low abundance Te, PbSe gets attention. This work enhances the near-room temperature performance of p-type PbSe through enhancing carrier mobility via lattice plainification. Composition controlled and Cu-doped p-type PbSe crystals are grown through physical vapor deposition. Results exhibit an enhanced carrier mobility ≈2578 cm2 V-1 s-1 for Pb0.996Cu0.0004Se. Microstructure characterization and density functional theory calculations verify the introduced Cu atoms filled Pb vacancies, realizing lattice plainification and enhancing the carrier mobility. The Pb0.996Cu0.0004Se sample achieves a power factor ≈42 µW cm-1 K-2 and a ZT ≈ 0.7 at 300 K. The average ZT of it reaches ≈0.9 (300-573 K), resulting in a single-leg power generation efficiency of 7.1% at temperature difference of 270 K, comparable to that of p-type commercial Bi2Te3. A 7-pairs device paired the p-type Pb0.996Cu0.0004Se with the n-type commercial Bi2Te3 shows a maximum cooling temperature difference ≈42 K with the hot side at 300 K, ≈65% of that of the commercial Bi2Te3 device. This work highlights the potential of p-type PbSe for power generation and refrigeration near room temperature and hope to inspire researchers on replacing commercial Bi2Te3.

Interstitials in Thermoelectrics

Defect structure is pivotal in advancing thermoelectric performance with interstitials being widely recognized for their remarkable roles in optimizing both phonon and electron transport properties. Diverse interstitial atoms are identified in previous works according to their distinct roles and can be classified into rattling interstitial, decoupling interstitial, interlayer interstitial, dynamic interstitial, and liquid interstitial. Specifically, rattling interstitial can cause phonon resonance in cage compound to scatter phonon transport; decoupling interstitial can contribute to phonon blocking and electron transport due to their significantly different mean free paths; interlayer interstitial can facilitate out-of-layer electron transport in layered compounds; dynamic interstitial can tune temperature-dependent carrier density and optimize electrical transport properties at wide temperatures; liquid interstitial could improve the carrier mobility at homogeneous dispersion state. All of these interstitials have positive impact on thermoelectric performance by adjusting transport parameters. This perspective therefore intends to provide a thorough overview of advances in interstitial strategy and highlight their significance for optimizing thermoelectric parameters. Finally, the profound potential for extending interstitial strategy to various other thermoelectric systems is discussed and some future directions in thermoelectric material are also outlined.

All-SnTe-Based Thermoelectric Power Generation Enabled by Stepwise Optimization of n-Type SnTe

The practical application of thermoelectric devices requires both high-performance n-type and p-type materials of the same system to avoid possible mismatches and improve device reliability. Currently, environmentally friendly SnTe thermoelectrics have witnessed extensive efforts to develop promising p-type transport, making it rather urgent to investigate the n-type counterparts with comparable performance. Herein, we develop a stepwise optimization strategy for improving the transport properties of n-type SnTe. First, we improve the n-type dopability of SnTe by PbSe alloying to narrow the band gap and obtain n-type transport in SnTe with halogen doping over the whole temperature range. Then, we introduce additional Pb atoms to compensate for the cationic vacancies in the SnTe-PbSe matrix, further enhancing the electron carrier concentration and electrical performance. Resultantly, the high-ranged thermoelectric performance of n-type SnTe is substantially optimized, achieving a peak ZT of ∼0.75 at 573 K with a high average ZT (ZTave) exceeding 0.5 from 300 to 823 K in the (SnTe0.98I0.02)0.6(Pb1.06Se)0.4 sample. Moreover, based on the performance optimization on n-type SnTe, for the first time, we fabricate an all-SnTe-based seven-pair thermoelectric device. This device can produce a maximum output power of ∼0.2 W and a conversion efficiency of ∼2.7% under a temperature difference of 350 K, demonstrating an important breakthrough for all-SnTe-based thermoelectric devices. Our research further illustrates the effectiveness and application potential of the environmentally friendly SnTe thermoelectrics for mid-temperature power generation.

Large Mobility Enables Higher Thermoelectric Cooling and Power Generation Performance in n-type AgPb18+xSbTe20 Crystals

The room-temperature thermoelectric performance of materials underpins their thermoelectric cooling ability. Carrier mobility plays a significant role in the electronic transport property of materials, especially near room temperature, which can be optimized by proper composition control and growing crystals. Here, we grow Pb-compensated AgPb18+xSbTe20 crystals using a vertical Bridgman method. A large weighted mobility of ∼410 cm2 V-1 s-1 is achieved in the AgPb18.4SbTe20 crystal, which is almost 4 times higher than that of the polycrystalline counterpart due to the elimination of grain boundaries and Ag-rich dislocations verified by atom probe tomography, highlighting the significant benefit of growing crystals for low-temperature thermoelectrics. Due to the largely promoted weighted mobility, we achieve a high power factor of ∼37.8 μW cm-1 K-2 and a large figure of merit ZT of ∼0.6 in AgPb18.4SbTe20 crystal at 303 K. We further designed a 7-pair thermoelectric module using this n-type crystal and a commercial p-type (Bi, Sb)2Te3-based material. As a result, a high cooling temperature difference (ΔT) of ∼42.7 K and a power generation efficiency of ∼3.7% are achieved, revealing promising thermoelectric applications for PbTe-based materials near room temperature.

Enhanced Thermoelectric Performance and Low Thermal Conductivity in Cu2GeTe3 with Identified Localized Symmetry Breakdown

Highly efficient and eco-friendly thermoelectric generators rely on low-cost and nontoxic semiconductors with high symmetry and ultralow lattice thermal conductivity κ_L. We report the rational synthesis of the novel cubic (Ag, Se)-doped Cu₂GeTe₃ semiconductors. A localized symmetry breakdown (LSB) was found in the composition of Cu_1.9Ag_0.1GeTe_1.5Se_1.5 (i.e., CAGTS15) with an ultralow κ_L of 0.37 W/mK at 723 K, the lowest value outperforming all Cu₂GeCh₃ (Ch = S, Se, and Te). A joint investigation of synchrotron X-ray techniques identifies the LSB embedded into the cubic CAGTS15 host matrix. This LSB is an Ångström-scale orthorhombic symmetry unit, characteristic of multiple bond lengths, large anisotropic atomic displacements, and distinct local chemical coordination of anions. Computational results highlight that such an unusual orthorhombic symmetry demonstrates low-frequency phonon modes, which become softer and more predominant with increasing temperatures. This unconventional LSB promotes bond complexity and phonon scattering, highly beneficial for extraordinarily low lattice thermal conductivity.

Enhanced Thermoelectric Performance of n-Type PbTe via Carrier Concentration Optimization over a Broad Temperature Range

The optimal carrier concentration of thermoelectric materials increases with increasing temperature. However, conventional aliovalent doping usually provides an approximately constant carrier concentration over the whole temperature range, which can only match the optimal carrier concentration in a narrow temperature range. In this work, n-type indium and aluminum codoped PbTe were prepared with high-pressure synthesis, followed by spark plasma sintering. While Al doping can provide a roughly constant carrier concentration with varying temperatures, In doping can trap electrons at low temperatures and release them at high temperatures, thus optimizing the carrier concentration over a broad temperature range. As a result, both electrical transport properties and thermal conductivity are optimized, and a significantly enhanced thermoelectric performance is achieved in InxAl0.02Pb0.98Te. The optimal In0.008Al0.02Pb0.98Te shows a peak ZT of 1.3 and an average ZT of 1, with a decent conversion efficiency of 14%. Current work demonstrates that optimizing carrier concentration with varying temperatures is effective to enhance the thermoelectric performance of n-type PbTe.

Advances in Versatile GeTe Thermoelectrics from Materials to Devices

Driven by the intensive efforts in the development of high-performance GeTe thermoelectrics for mass-market application in power generation and refrigeration, GeTe-based materials display a high figure of merit of >2.0 and an energy conversion efficiency beyond 10%. However, a comprehensive review on GeTe, from fundamentals to devices, is still needed. In this regard, the latest progress on the state-of-the-art GeTe is timely reviewed. The phase transition, intrinsic high carrier concentration, and multiple band edges of GeTe are fundamentally analyzed from the perspectives of the native atomic orbital, chemical bonding, and lattice defects. Then, the fabrication methods are summarized with a focus on large-scale production. Afterward, the strategies for enhancing electronic transports of GeTe by energy filtering effect, resonance doping, band convergence, and Rashba band splitting, and the methods for strengthening phonon scatterings via nanoprecipitates, planar vacancies, and superlattices, are comprehensively reviewed. Besides, the device assembly and performance are highlighted. In the end, future research directions are concluded and proposed, which enlighten the development of broader thermoelectric materials.

Enhanced Thermoelectric Performance in Black Phosphorene via Tunable Interlayer Twist

Twist-angle two-dimensional (2D) systems are attractive in their exotic and tunable properties by the formation of the moiré superlattices, allowing easy access to manipulating intrinsic electrical and thermal properties. Here, the angle-dependent thermoelectric properties of twisted bilayer black phosphorene (tbBP) by first-principles calculations are reported. The simulations show that significantly enhanced Seebeck coefficient and power factor can be achieved in p-type tbBP due to merging of the multi-valley electronic states and flat moiré bands. Moreover, the twisted layers bring in a strong anharmonic phonon scattering and thus very low lattice thermal conductivity of 4.51 W m^-1  K^-1 at 300 K. Consequently, a maximal ZT value can be achieved in p-type 10.11° tbBP along the armchair direction up to 0.57 and 1.06 at 300 and 500 K, respectively. The room-temperature ZT value along the zigzag direction is also significantly increased by almost 40 times compared to pristine BP when the twist angle is close to 70.68°. This work demonstrates a platform to manipulate thermoelectric performance in 2D materials by creating moiré patterns, leading tbBP as a promising eco-friendly candidate for thermoelectric applications.

Atomic Level Defect Structure Engineering for Unusually High Average Thermoelectric Figure of Merit in n-Type PbSe Rivalling PbTe

Realizing high average thermoelectric figure of merit (ZT_ave ) and power factor (PF_ave ) has been the utmost task in thermoelectrics. Here the new strategy to independently improve constituent factors in ZT is reported, giving exceptionally high ZT_ave and PF_ave in n-type PbSe. The nonstoichiometric, alloyed composition and resulting defect structures in new Pb_{1+ x} Se_0.8 Te_0.2 (x = 0-0.125) system is key to this achievement. First, incorporating excess Pb unusually increases carrier mobility (µ_H ) and concentration (n_H ) simultaneously in contrast to the general physics rule, thereby raising electrical conductivity (σ). Second, modifying charge scattering mechanism by the authors' synthesis process boosts a magnitude of Seebeck coefficient (S) above theoretical expectations. Detouring the innate inverse proportionality between n_H and µ_H ; and σ and S enables independent control over them and change the typical trend of PF to temperature, giving remarkably high PF_ave ≈20 µW cm^-1 K^-2 from 300 to 823 K. The dual incorporation of Te and excess Pb generates unusual antisite Pb at the anionic site and displaced Pb from the ideal position, consequently suppressing lattice thermal conductivity. The best composition exhibits a ZT_ave of ≈1.2 from 400 to 823 K, one of the highest reported for all n-type PbQ (Q = chalcogens) materials.

Dramatic Enhancement of Thermoelectric Performance in PbTe by Unconventional Grain Shrinking in the Sintering Process

Nanostructure engineering is a key strategy for tailoring properties in the fields of batteries, solar cells, thermoelectrics, and so on. Limited by grain coarsening, however, the nanostructure effect gradually degrades during the materials' manufacturing and in-service period. Herein, a strategy of cleavage-fracture for grain shrinking is developed in a Pb_0.98 Sb_0.02 Te sample during sintering, and the grain size remains stable after repeated tests. Moreover, the initial grain boundary is filled by fractured slender grains and enriched by dislocations, evolving into a hierarchical grain-boundary structure. The lattice thermal conductivity (k_lat ) is greatly reduced to approach the amorphous limit. As a result, a record-high ZT value of ≈1.9 is obtained at 815 K in the n-type Pb_0.98 Sb_0.02 Te sample and a decent efficiency of 6.7% in thermoelectric device. This strategy for grain shrinking will shed light on the application of nanostructure engineering under high temperature and extreme conditions in other material systems.

Enhancing Thermoelectrics for Small-Bandwidth n-Type PbTe-MnTe Alloys via Balancing Compromise

Small-bandwidth n-type PbTe-MnTe alloys effectively modify the valley shape, while it also inevitably aggravates the deterioration of carrier mobility as nonpolar phonons dominate the scattering. It is found that a trace amount of Cu doping can alleviate the compromises among thermoelectric parameters, thereby significantly optimizing the electrical-transport performance near room temperature of n-type PbTe-MnTe alloys. The single-Kane model reveals that the physical origin of performance improvement lies in the carrier mobility enhancement and self-optimization of carrier concentration. The Debye-Callaway model further quantifies the contribution of copper defect scattering to the lattice thermal conductivity. Notably, the high thermoelectric quality factor obtained in this work rationalizes their superior properties and reveals immense potential for achieving higher zT. Herein, an extremely high zT of ∼0.52 at room temperature and a maximum zTmax of ∼1.2 at 823 K are achieved in 0.3% Cu-intercalated n-type PbTe-MnTe. The mechanism in balancing compromise elaborated in principle contributes to an improvement of thermoelectric properties of the n-type PbTe alloys in a broad temperature range.

Computing with DFT Band Offsets at Semiconductor Interfaces: A Comparison of Two Methods

Two DFT-based methods using hybrid functionals and plane-averaged profiles of the Hartree potential (individual slabs versus vacuum and alternating slabs of both materials), which are frequently used to predict or estimate the offset between bands at interfaces between two semiconductors, are analyzed in the present work. These methods are compared using several very different semiconductor pairs, and the conclusions about the advantages of each method are discussed. Overall, the alternating slabs method is recommended in those cases where epitaxial mismatch does not represent a significant problem.

Optimized Strategies for Advancing n-Type PbTe Thermoelectrics: A Review

p-Type and n-type thermoelectric semiconductor materials with compatible performance are key components for thermoelectric devices. Great improvement in thermoelectric performance has been achieved in p-type PbTe, whereas the n-type counterpart still shows much inferior thermoelectric performance compared to that of the p-type PbTe. This inspires many strategies focused on advancing n-type PbTe thermoelectrics. Herein, not only effective mass engineering, resonance states, point defects, and nanostructures but also newly developed concepts including dynamic doping for stabilizing the optimal carrier concentration and introducing dislocations for reducing lattice thermal conductivity are summarized. In addition, the synergistic effects for further enhancing the thermoelectric performance are outlined, together with a discussion and outlook for boosting the advancement in n-type PbTe thermoelectric materials. Strategies discussed here are expected to be applicable to other thermoelectric materials.

Investigation on carrier mobility when comparing nanostructures and bands manipulation

Nanostructuring as an effective strategy to reduce thermal conductivity was well developed to enhance thermoelectric performance in the past decades. However, electrical transport properties are always suppressed with nanostructures incorporated into a matrix, which finally causes limited increase of thermoelectric performance. To pursue further enhancement in thermoelectric materials beyond nanostructures, the approach of manipulating electronic band structures was revisited to optimize carrier transports by balancing the competitive relationship between carrier mobility and effective mass. In this review, we highlight and compare some advanced strategies to optimize electrical transport properties in lead and tin chalcogenides, including nanostructuring, bands manipulation and an integration of the two. We first summarize recent developments and compare the thermoelectric performance achieved by nanostructuring and bands manipulation, respectively. Then, several strategies to manipulate band structures are introduced and the competitive relationship between carrier mobility and effective mass are comprehensively investigated and revealed. Finally, the importance of elaborately modulating the carrier mobility and effective mass is emphasized, and a discussion of possible future strategies is presented to aim at further enhancing the thermoelectric performance.

Ultrahigh Average ZT Realized in p-Type SnSe Crystalline Thermoelectrics through Producing Extrinsic Vacancies

Crystalline SnSe has been revealed as an efficient thermoelectric candidate with outstanding performance. Herein, record-high thermoelectric performance is achieved among SnSe crystals via simply introducing a small amount of SnSe₂ as a kind of extrinsic defect dopant. This excellent performance mainly arises from the largely enhanced power factor by increasing the carrier concentration high as 6.55 × 10¹⁹ cm^-3, which was surprisingly promoted by introducing extrinsic SnSe₂ even though pristine SnSe₂ is an n-type conductor. The optimized carrier concentration promotes a deeper Fermi level and activates more valence bands, leading to an extraordinary room-temperature power factor ∼54 μW cm^-1 K^-2 through enlarging the band effective mass and Seebeck coefficient. As a result, on the basis of simultaneously depressed thermal conductivity induced from both Sn vacancies and SnSe₂ microdomains, maximum ZT values ∼0.9-2.2 and excellent average ZT > 1.7 among the working temperature range are achieved in Na doped SnSe crystals with 2% extrinsic SnSe₂. Our investigation illustrates new approaches on improving thermoelectric performance through introducing defect dopants, which might be well-implemented in other thermoelectric systems.

Realization of Both n- and p-Type GeTe Thermoelectrics: Electronic Structure Modulation by AgBiSe2 Alloying

Successful applications of a thermoelectric material require simultaneous development of compatible n- and p-type counterparts. While the thermoelectric performance of p-type GeTe has been improved tremendously in recent years, it has been a challenge to find a compatible n-type GeTe counterpart due to the prevalence of intrinsic Ge vacancies. Herein, we have shown that alloying of AgBiSe₂ with GeTe results in an intriguing evolution in its crystal and electronic structures, resulting in n-type thermoelectric properties. We have demonstrated that the ambient rhombohedral structure of pristine GeTe transforms into cubic phase in (GeTe)_100-x(AgBiSe₂)_x for x ≥ 25, with concurrent change from its p-type electronic character to n-type character in electronic transport properties. Such change in structural and electronic properties is confirmed from the nonmonotonic variation of band gap, unit cell volume, electrical conductivity, and Seebeck coefficient, all of which show an inflection point around x ∼ 20, as well as from the temperature variations of synchrotron powder X-ray diffractions and differential scanning calorimetry. First-principles density functional theoretical (DFT) calculations explain that the shift toward n-type electronic character with increasing AgBiSe₂ concentration arises due to increasing contribution of Bi p orbitals in the conduction band edge of (GeTe)_100-x(AgBiSe₂)_x. This cubic n-type phase has promising thermoelectric properties with a band gap of ∼0.25 eV and ultralow lattice thermal conductivity that ranges between 0.3 and 0.6 W/mK. Further, we have shown that (GeTe)_100-x(AgBiSe₂)_x has promising thermoelectric performance in the mid-temperature range (400-500 K) with maximum thermoelectric figure of merit, zT, reaching ∼1.3 in p-type (GeTe)₈₀(AgBiSe₂)₂₀ at 467 K and ∼0.6 in n-type (GeTe)₅₀(AgBiSe₂)₅₀ at 500 K.

High thermoelectric performance in low-cost SnS0.91Se0.09 crystals

Thermoelectric technology allows conversion between heat and electricity. Many good thermoelectric materials contain rare or toxic elements, so developing low-cost and high-performance thermoelectric materials is warranted. Here, we report the temperature-dependent interplay of three separate electronic bands in hole-doped tin sulfide (SnS) crystals. This behavior leads to synergistic optimization between effective mass (m*) and carrier mobility (μ) and can be boosted through introducing selenium (Se). This enhanced the power factor from ~30 to ~53 microwatts per centimeter per square kelvin (μW cm−1 K−2 at 300 K), while lowering the thermal conductivity after Se alloying. As a result, we obtained a maximum figure of merit ZT (ZTmax) of ~1.6 at 873 K and an average ZT (ZTave) of ~1.25 at 300 to 873 K in SnS0.91Se0.09 crystals. Our strategy for band manipulation offers a different route for optimizing thermoelectric performance. The high-performance SnS crystals represent an important step toward low-cost, Earth-abundant, and environmentally friendly thermoelectrics.