Facile Secondary Deposition for Improving Quantum Dot Loading in Fabricating Quantum Dot Solar Cells

Improving the efficiency of quantum dot-sensitized solar cells by increasing the QD loading amount

In quantum dot-sensitized solar cells (QDSCs), optimized quantum dot (QD) loading mode and high QD loading amount are prerequisites for great device performance. Capping ligand-induced self-assembly (CLIS) mode represents the mainstream QD loading strategy in the fabrication of high-efficiency QDSCs. However, there remain limitations in CLIS that constrain further enhancement of QD loading levels. This review illustrates the development of various QD loading methods in QDSCs, with an emphasis on the outstanding merits and bottlenecks of CLIS. Subsequently, thermodynamic and kinetic factors dominating QD loading behaviors in CLIS are analyzed theoretically. Upon understanding driving forces, resistances, and energy effects in a QD assembly process, various novel strategies for improving the QD loading amount in CLIS are summarized, and the related functional mechanism is established. Finally, the article concludes and outlooks some remaining academic issues to be solved, so that higher QD loading amount and efficiencies of QDSCs can be anticipated in the future.

Reduced Surface Trap States of PbS Quantum Dots by Acetonitrile Treatment for Efficient SnO2-Based PbS Quantum Dot Solar Cells

The solution-phase ligand-exchange strategy offers a simple pathway to prepare PbS quantum dots (QDs) and their corresponding solar cells. However, the production of high-quality PbS QDs with reduced surface trap state density for efficient PbS QD solar cells (QDSCs) still faces challenges. As the hydroxyl group (-OH) has been demonstrated to be the primary source of the surface trap states on PbS QDs in the general oleic acid method, here, we present an effective and facile strategy for reducing the surface -OH content of PbS QDs by using acetonitrile (ACN) as precipitant to wash the surface of QDs, which significantly decreases the trap state density and enables the preparation of superior PbS QDs. The resulting solar cell with an ITO/SnO2/n-PbS/p-PbS/Au structure obtained an improved photoelectric conversion efficiency (PCE) from 8.53 to 10.49% with an enhanced air storage stability, realizing a high PCE for SnO2-based PbS QDSCs.

Synthesis and hybridization of CuInS2 nanocrystals for emerging applications

Copper indium sulfide (CuInS2) is a ternary A(I)B(III)X(VI)2-type semiconductor featuring a direct bandgap with a high absorption coefficient. In attempts to explore their practical applications, nanoscale CuInS2 has been synthesized with crystal sizes down to the quantum confinement regime. The merits of CuInS2 nanocrystals (NCs) include wide emission tunability, a large Stokes shift, long decay time, and eco-friendliness, making them promising candidates in photoelectronics and photovoltaics. Over the past two decades, advances in wet-chemistry synthesis have achieved rational control over cation-anion reactivity during the preparation of colloidal CuInS2 NCs and post-synthesis cation exchange. The precise nano-synthesis coupled with a series of hybridization strategies has given birth to a library of CuInS2 NCs with highly customizable photophysical properties. This review article focuses on the recent development of CuInS2 NCs enabled by advanced synthetic and hybridization techniques. We show that the state-of-the-art CuInS2 NCs play significant roles in optoelectronic and biomedical applications.

MOF-derived CuxS double-faced-decorated carbon nanosheets as high-performance and stable counter electrodes for quantum dots solar cells

The development of highly-catalytic counter electrode (CE) materials is vital to the construction of quantum dot-sensitized solar cells (QDSCs) but is still challenging. Here, a novel self-assembly double-faced decorated carbon nanosheets with MOF-derived Cu_xS nanospheres (DF-Cu_xS/C NSs) were prepared as high-performance hybrid CEs for improving the catalytic activity towards polysulfide electrolytes and enhancing the performance of QDSCs. It is shown that the MOF-derived Cu_xS nanospheres disperse well on the surface of the carbon NSs in the obtained DF-Cu_xS/C NSs hybrids. Electrochemical characterization demonstrated that the DF-Cu_xS/C NSs with moderate mass ratio exhibited enhanced electrocatalytic activity towards the reduction of the polysulfide redox couple (S_n^2-/S^2-) and decreased charge transfer resistance at the interface of the CE/electrolyte. Benefitting from the merits of this novel hybrid CE, the power conversion efficiency (PCE) of the CdSeTe QDs-based QDSCs is increased to 9.39%, which is higher than the pristine carrageenan (CA)-derived CEs (5.84%) and Cu-BTC-derived CEs (7.74%). With the further optimization of the substrate, the highest PCE of 11.36% was achieved based on the Ti mesh substrate supported hybrid CE.

Improving the Efficiency of Quantum Dot Sensitized Solar Cells beyond 15% via Secondary Deposition

Low loading is one of the bottlenecks limiting the performance of quantum dot sensitized solar cells (QDSCs). Although previous QD secondary deposition relying on electrostatic interaction can improve QD loading, due to the introduction of new recombination centers, it is not capable of enhancing the photovoltage and fill factor. Herein, without the introduction of new recombination centers, a convenient QD secondary deposition approach is developed by creating new adsorption sites via the formation of a metal oxyhydroxide layer around QD presensitized photoanodes. MgCl₂ solution treated Zn-Cu-In-S-Se (ZCISSe) QD sensitized TiO₂ film electrodes have been chosen as a model device to investigate this secondary deposition approach. The experimental results demonstrate that additional 38% of the QDs are immobilized on the photoanode as a single layer. Due to the increased QD loading and concomitant enhanced light-harvesting capacity and reduced charge recombination, not only photocurrent but also photovoltage and fill factor have been remarkably enhanced. The average PCE of resulted ZCISSe QDSCs is boosted to 15.31% (J_sc = 26.52 mA cm^-2, V_oc = 0.802 V, FF = 0.720), from the original 13.54% (J_sc = 24.23 mA cm^-2, V_oc = 0.789 V, FF = 0.708). Furthermore, a new certified PCE record of 15.20% has been obtained for liquid-junction QDSCs.

Zn-Cu-In-S-Se Quinary "Green" Alloyed Quantum-Dot-Sensitized Solar Cells with a Certified Efficiency of 14.4

The photoelectronic properties of quantum dots (QDs) have a critical impact on the performance of quantum-dot-sensitized solar cells (QDSCs). Currently, I-III-VI group QDs have become the mainstream light-harvesting materials in high-performance QDSCs. However, it is still a great challenge to achieve satisfactory efficiency for light-harvesting, charge extraction, and charge collection simultaneously in QDSCs. We design and prepare Zn_0.4 Cu_0.7 In_1.0 S_x Se_2-x (ZCISSe) quinary alloyed QDs by cation/anion co-alloying strategy. The critical photoelectronic properties of target QDs, including band gap, conduction band energy level, and density of defect trap states, can be conveniently tailored. Experimental results demonstrate that the ZCISSe quinary alloyed QDs can achieve an ideal balance among light-harvesting, photogenerated electron extraction, and charge-collection efficiencies in QDSCs compared to its single anion or cation quaternary alloyed QD counterparts. Consequently, the quinary alloyed QDs boost the certified efficiency of QDSCs to 14.4 %, which is a new efficiency record for liquid-junction QD solar cells.

Photoexcited carrier dynamics in colloidal quantum dot solar cells: insights into individual quantum dots, quantum dot solid films and devices

The certified power conversion efficiency (PCE) record of colloidal quantum dot solar cells (QDSCs) has considerably improved from below 4% to 16.6% in the last few years. However, the record PCE value of QDSCs is still substantially lower than the theoretical efficiency. So far, there have been several reviews on recent and significant achievements in QDSCs, but reviews on photoexcited carrier dynamics in QDSCs are scarce. The photovoltaic performances of QDSCs are still limited by the photovoltage, photocurrent and fill factor that are mainly determined by the photoexcited carrier dynamics, including carrier (or exciton) generation, carrier extraction or transfer, and the carrier recombination process, in the devices. In this review, the photoexcited carrier dynamics in the whole QDSCs, originating from individual quantum dots (QDs) to the entire device as well as the characterization methods used for analyzing the photoexcited carrier dynamics are summarized and discussed. The recent research including photoexcited multiple exciton generation (MEG), hot electron extraction, and carrier transfer between adjacent QDs, as well as carrier injection and recombination at each interface of QDSCs are discussed in detail herein. The influence of photoexcited carrier dynamics on the physiochemical properties of QDs and photovoltaic performances of QDSC devices is also discussed.

Enhanced performance of all solid-state quantum dot-sensitized solar cells via synchronous deposition of PbS and CdS quantum dots

The synchronous deposition of PbS and CdS affords band-structure tailoring and surface recombination passivation for efficient and stable solid-state QDSCs.

Al/Zn co-incorporated Cu–In–Se quantum dots for high efficiency quantum dot sensitized solar cells

A facile method for synthesizing high-quality Cu–In–Se quantum dots (QDs) was developed by Al/Zn co-incorporation. Benefiting from the reduction of trap-state defects in QDs, the efficiency of solar cells basing prepared QDs is obviously improved.

ZnSxSe1-x Alloy Passivation Layer for High-Efficiency Quantum-Dot-Sensitized Solar Cells

Interface modification is an important means for improving the performance of almost all optoelectronic devices. In quantum-dot-sensitized solar cells (QDSCs), effective surface modification of photoanode also has a critical impact on photovoltaic performance. At present, ZnS and ZnSe wide band gap semiconductors are the mainstream materials used for photoanode/electrolyte interface passivation in QDSCs. However, the problem with these two materials is that the passivation effect and the lattice match with TiO₂/QD are difficult to be balanced. Although ZnS can form a larger energetic barrier due to the higher conduction band edge, its lattice mismatch with TiO₂ and QD (such as CdSe and CuInSe₂) is large, leading to the formation of additional defect states. On the contrary, ZnSe has a small lattice mismatch with TiO₂ and QD but a relatively lower conduction band edge. Herein, we propose a strategy to employ ZnS_xSe_1-x alloy materials as a passivation layer for the first time to solve the drawbacks of single-component passivation layers. The ZnS_xSe_1-x alloy passivation layer was deposited on the Zn-Cu-In-Se (ZCISe) QD-sensitized TiO₂ film electrode via successive ionic layer adsorption and reaction (SILAR) method. A stable polyselenosulfide/sulfide mixed anions were served as anion precursor for the formation of ZnS_xSe_1-x alloy passivation layer. Experimental results revealed that the alloy passivation layer is more favorable for the suppression of charge recombination at the photoanode/electrolyte interface. In addition, the ZnS_xSe_1-x alloy passivation layer can significantly improve the photogenerated electron extraction efficiency compared to the current classical ZnS passivation layer as confirmed by the transient absorption (TA) measurement. Consequently, the average efficiency of QDSCs was improved from 12.17 to 13.08% with the replacement of traditional ZnS passivation layer by ZnSSe-10 under AM 1.5G one full sun illumination.

Se-Assisted Performance Enhancement of Cu2ZnSn(S,Se)4 Quantum-Dot Sensitized Solar Cells via a Simple Yet Versatile Synthesis

The earth-abundant Cu₂ZnSnS₄ (CZTS) quantum dots (QDs) have emerged as one potential substitute to toxic cadmium or rare indium QDs, but their application in quantum dot-sensitized solar cells (QDSSCs) is still limited by the improper particle size and the rigorous synthesis and ligand exchange conditions. Herein, we developed a one-pot hot injection method by using Tri-n-octylphosphine oxide (TOPO) as the solvent and oleylamine as the capping agent to synthesize Cu₂ZnSn(S,Se)₄ (CZTSSe) QDs with adjustable size and narrow size distribution. The key feature of this approach is that we can take advantage of the high-temperature nucleation, low-temperature growth, and strong reducibility of NaHB₄ to prepare small-sized CZTSSe QDs without using 1-dodecanethiol (DDT) and to extend the light harvesting range through Se incorporation. After Se incorporation, it turns out that the conduction band (CB) level of CZTSSe QDs decreases, implying that the injection driving force of the electron to the CB of TiO₂ films becomes weaker and a larger recombination would be induced at the TiO₂/QDs/electrolyte interface. Benefiting from the broadened optoelectronic response range, the induced higher J_sc (16.80 vs 14.13 mA/cm²) finally leads to the increase of the conversion efficiency of CZTSSe QDSSC from 3.17% to 3.54% without further modification. Despite the fact that the efficiency is still far behind those of literature reported values through use of other chalcogenide sensitizers, this DDT-free approach solves the main hindrance for the application of CZTSSe QDs in QDSSCs and holds a more convenient way for ligand exchange, light absorption improvement, and particle size control.

MOF-Derived Co,N Codoped Carbon/Ti Mesh Counter Electrode for High-Efficiency Quantum Dot Sensitized Solar Cells

Carbon supported on titanium mesh electrodes has been recognized as the best performing counter electrodes (CEs) in quantum dot sensitized solar cells (QDSCs). Herein, layered double hydroxides (LDHs) are applied as a scaffold template for the growth of cobalt-zeolite-imidazole framework (ZIF-67) crystals, and micrometer-sized Co,N codoped porous carbon materials (Co,N-C) are obtained through a carbonization process. The as-prepared Co,N-C exhibits favorable features for electrocatalytic reduction of polysulfide, including a high surface area of 491.36 m²/g, highly effective active sites, and a hierarchical micro/mesoporous structure. Due to the large particle size, the obtained Co,N-C can couple with a Ti mesh substrate for the fabrication of high-performance Co,N-C/Ti CEs for QDSCs. As a result, the corresponding QDSCs exhibit an average efficiency of 13.55% (J_sc = 25.93 mA/cm², V_oc = 0.778 V, FF = 0.672), which is a 10.5% enhancement compared to the previous best result from the N-doped mesoporous carbon counterpart.