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Cheng T, Bets KV, Yakobson BI. Synthesis Landscapes for Ammonia Borane Chemical Vapor Deposition of h-BN and BNNT: Unraveling Reactions and Intermediates from First-Principles. J Am Chem Soc 2024; 146:9318-9325. [PMID: 38517068 DOI: 10.1021/jacs.4c01354] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 03/23/2024]
Abstract
Planar hexagonal boron nitride (h-BN) and tubular BN nanotube (BNNT), known for their superior mechanical and thermal properties, as well as wide electronic band gap, hold great potential for nanoelectronic and optoelectronic devices. Chemical vapor deposition has demonstrated the best way to scalable synthesis of high-quality BN nanomaterials. Yet, the atomistic understanding of reactions from precursors to product-material remains elusive, posing challenges for experimental design. Here, performing first-principles calculations and ab initio molecular simulations, we explore pyrolytic decomposition pathways of the most used precursor ammonia borane (H3BNH3, AB) to BN, in gas-phase and on Ni(111) or amorphous boron (for BNNT growth) surfaces, for comparison. It reveals that in the gas phase, a pair of AB molecules cooperate to form intermediate NH3 and ammonia diborane, which further dissociates into H2BNH2, accompanied by critical BH4- and NH4+ ions. These ions act as H scavengers facilitating H2BNH2 dehydrogenation into HBNH. The consequent HBNH directly feeds BN flake growth by reacting with the crystal edge, while the addition of H2BNH2 to the edge is prohibited at 1500 K. In contrast, on Ni and boron surfaces, AB monomer dehydrogenates stepwise, deeper, yielding BNH and BN dimer as the primary building unit. Our study maps out three typical experimental conditions regarding the dissociation of AB-precursor, providing insights into the underlying reaction mechanisms of gas-phase precursors, to help as guidelines for the experimental growth of BN nanomaterials.
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Affiliation(s)
- Ting Cheng
- Department of Materials Science & NanoEngineering, Rice University, Houston, TX 77005, United States
| | - Ksenia V Bets
- Department of Materials Science & NanoEngineering, Rice University, Houston, TX 77005, United States
| | - Boris I Yakobson
- Department of Materials Science & NanoEngineering, Rice University, Houston, TX 77005, United States
- Department of Chemistry, Rice University, Houston, TX 77005, United States
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Erohin SV, Sorokin PB. Edges in bilayered h-BN: insights into the atomic structure. NANOSCALE 2022; 14:14155-14160. [PMID: 36111581 DOI: 10.1039/d2nr02818b] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/15/2023]
Abstract
This study is devoted to the study of the edges of bilayered h-BN, whose atomic structure was previously generally unknown. It is shown that the edges tend to connect regardless of the edge cut. A defectless connection can be expected only in the case of a zigzag edge, while in other cases a series of tetragonal and octagonal defects will be formed. This result was obtained by carrying out an analogy between the edge of bilayered h-BN and the interface of monolayer h-BN. Information on the structure and energetics of closed edges allowed us to predict the shape of holes in h-BN, which agreed with the reference experimental data. Finally, it is shown that the closed edges do not create electronic states in the band gap, thus not changing the dielectricity of h-BN.
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Affiliation(s)
- Sergey V Erohin
- Rzhanov Institute of Semiconductor Physics, Novosibirsk 630090, Russian Federation.
- National University of Science and Technology MISIS, Moscow 119049, Russian Federation
| | - Pavel B Sorokin
- Rzhanov Institute of Semiconductor Physics, Novosibirsk 630090, Russian Federation.
- National University of Science and Technology MISIS, Moscow 119049, Russian Federation
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Thermally Conductive Anticorrosive Epoxy Nanocomposites with Tannic Acid-Modified Boron Nitride Nanosheets. Ind Eng Chem Res 2020. [DOI: 10.1021/acs.iecr.0c04510] [Citation(s) in RCA: 26] [Impact Index Per Article: 6.5] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/29/2022]
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Joy J, George E, Haritha P, Thomas S, Anas S. An overview of boron nitride based polymer nanocomposites. JOURNAL OF POLYMER SCIENCE 2020. [DOI: 10.1002/pol.20200507] [Citation(s) in RCA: 34] [Impact Index Per Article: 8.5] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/18/2022]
Affiliation(s)
- Jomon Joy
- School of Chemical Sciences Mahatma Gandhi University Kottayam Kerala India
| | - Elssa George
- School of Chemical Sciences Mahatma Gandhi University Kottayam Kerala India
| | - Prakashan Haritha
- School of Chemical Sciences Mahatma Gandhi University Kottayam Kerala India
| | - Sabu Thomas
- School of Chemical Sciences Mahatma Gandhi University Kottayam Kerala India
- International and Inter University Centre for Nanoscience and Nanotechnology Mahatma Gandhi University Kottayam Kerala India
| | - Saithalavi Anas
- School of Chemical Sciences Mahatma Gandhi University Kottayam Kerala India
- Advanced Molecular Materials Research Centre Mahatma Gandhi University Kottayam Kerala India
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Pan D, Su F, Liu H, Ma Y, Das R, Hu Q, Liu C, Guo Z. The Properties and Preparation Methods of Different Boron Nitride Nanostructures and Applications of Related Nanocomposites. CHEM REC 2020; 20:1314-1337. [PMID: 32959523 DOI: 10.1002/tcr.202000079] [Citation(s) in RCA: 9] [Impact Index Per Article: 2.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 07/09/2020] [Revised: 08/26/2020] [Indexed: 12/14/2022]
Abstract
Due to special non-metallic polar bond between the III group (with certain metallic properties) element boron (B) and the V group element nitrogen (N), boron nitride (BN) has unique physical and chemical properties such as strong high-temperature resistance, oxidation resistance, heat conduction, electrical insulation and neutron absorption. Its unique lamellar, reticular and tubular morphologies and physicochemical properties make it attractive in the fields of adsorption, catalysis, hydrogen storage, thermal conduction, insulation, dielectric substrate of electronic devices, radiation protection, polymer composites, medicine, etc. Therefore, the synthesis and properties of BN derived materials become the main research hotspots of low-dimensional nanomaterials. This paper reviews the synthetic methods, overall properties, and applications of BN nanostructures and nanocomposites. In addition, challenges and prospect of this kind of materials are discussed.
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Affiliation(s)
- Duo Pan
- Key Laboratory of Materials Processing and Mold (Zhengzhou University), Ministry of Education; National Engineering Research Center for Advanced Polymer Processing Technology, Zhengzhou University, Zhengzhou, 450002, China
| | - Fengmei Su
- Key Laboratory of Materials Processing and Mold (Zhengzhou University), Ministry of Education; National Engineering Research Center for Advanced Polymer Processing Technology, Zhengzhou University, Zhengzhou, 450002, China
| | - Hu Liu
- Key Laboratory of Materials Processing and Mold (Zhengzhou University), Ministry of Education; National Engineering Research Center for Advanced Polymer Processing Technology, Zhengzhou University, Zhengzhou, 450002, China
| | - Yong Ma
- College of Chemical and Environmental Engineering, Shandong University of Science and Technology, Qingdao, 266590, China
| | - Rajib Das
- Oxea Chemical company (OQ), Bay City, Texas 77414, USA
| | - Qian Hu
- Integrated Composites Laboratory (ICL), Department of Chemical & Biomolecular Engineering, University of Tennessee, Knoxville, TN 37996, USA
| | - Chuntai Liu
- Key Laboratory of Materials Processing and Mold (Zhengzhou University), Ministry of Education; National Engineering Research Center for Advanced Polymer Processing Technology, Zhengzhou University, Zhengzhou, 450002, China
| | - Zhanhu Guo
- Integrated Composites Laboratory (ICL), Department of Chemical & Biomolecular Engineering, University of Tennessee, Knoxville, TN 37996, USA
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Shen Z, Zhao C, Qi Y, Mitrovic IZ, Yang L, Wen J, Huang Y, Li P, Zhao C. Memristive Non-Volatile Memory Based on Graphene Materials. MICROMACHINES 2020; 11:E341. [PMID: 32218324 PMCID: PMC7231216 DOI: 10.3390/mi11040341] [Citation(s) in RCA: 20] [Impact Index Per Article: 5.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 01/30/2020] [Revised: 03/14/2020] [Accepted: 03/21/2020] [Indexed: 02/04/2023]
Abstract
Resistive random access memory (RRAM), which is considered as one of the most promising next-generation non-volatile memory (NVM) devices and a representative of memristor technologies, demonstrated great potential in acting as an artificial synapse in the industry of neuromorphic systems and artificial intelligence (AI), due its advantages such as fast operation speed, low power consumption, and high device density. Graphene and related materials (GRMs), especially graphene oxide (GO), acting as active materials for RRAM devices, are considered as a promising alternative to other materials including metal oxides and perovskite materials. Herein, an overview of GRM-based RRAM devices is provided, with discussion about the properties of GRMs, main operation mechanisms for resistive switching (RS) behavior, figure of merit (FoM) summary, and prospect extension of GRM-based RRAM devices. With excellent physical and chemical advantages like intrinsic Young's modulus (1.0 TPa), good tensile strength (130 GPa), excellent carrier mobility (2.0 × 105 cm2∙V-1∙s-1), and high thermal (5000 Wm-1∙K-1) and superior electrical conductivity (1.0 × 106 S∙m-1), GRMs can act as electrodes and resistive switching media in RRAM devices. In addition, the GRM-based interface between electrode and dielectric can have an effect on atomic diffusion limitation in dielectric and surface effect suppression. Immense amounts of concrete research indicate that GRMs might play a significant role in promoting the large-scale commercialization possibility of RRAM devices.
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Affiliation(s)
- Zongjie Shen
- Department of Electrical and Electronic Engineering, Xi’an Jiaotong–Liverpool University, Suzhou 215123, China; (Z.S.); (Y.Q.); (J.W.); (Y.H.); (P.L.)
- Department of Electrical Engineering and Electronics, University of Liverpool, Liverpool L69 3BX, UK;
| | - Chun Zhao
- Department of Electrical and Electronic Engineering, Xi’an Jiaotong–Liverpool University, Suzhou 215123, China; (Z.S.); (Y.Q.); (J.W.); (Y.H.); (P.L.)
- Department of Electrical Engineering and Electronics, University of Liverpool, Liverpool L69 3BX, UK;
| | - Yanfei Qi
- Department of Electrical and Electronic Engineering, Xi’an Jiaotong–Liverpool University, Suzhou 215123, China; (Z.S.); (Y.Q.); (J.W.); (Y.H.); (P.L.)
- School of Electronic and Information Engineering, Xi’an Jiaotong University, Xi’an 710061, China
| | - Ivona Z. Mitrovic
- Department of Electrical Engineering and Electronics, University of Liverpool, Liverpool L69 3BX, UK;
| | - Li Yang
- Department of Chemistry, Xi’an Jiaotong–Liverpool University, Suzhou 215123, China;
- Department of Chemistry, University of Liverpool, Liverpool L69 3BX, UK
| | - Jiacheng Wen
- Department of Electrical and Electronic Engineering, Xi’an Jiaotong–Liverpool University, Suzhou 215123, China; (Z.S.); (Y.Q.); (J.W.); (Y.H.); (P.L.)
- Department of Electrical Engineering and Electronics, University of Liverpool, Liverpool L69 3BX, UK;
| | - Yanbo Huang
- Department of Electrical and Electronic Engineering, Xi’an Jiaotong–Liverpool University, Suzhou 215123, China; (Z.S.); (Y.Q.); (J.W.); (Y.H.); (P.L.)
- Department of Electrical Engineering and Electronics, University of Liverpool, Liverpool L69 3BX, UK;
| | - Puzhuo Li
- Department of Electrical and Electronic Engineering, Xi’an Jiaotong–Liverpool University, Suzhou 215123, China; (Z.S.); (Y.Q.); (J.W.); (Y.H.); (P.L.)
- Department of Electrical Engineering and Electronics, University of Liverpool, Liverpool L69 3BX, UK;
| | - Cezhou Zhao
- Department of Electrical and Electronic Engineering, Xi’an Jiaotong–Liverpool University, Suzhou 215123, China; (Z.S.); (Y.Q.); (J.W.); (Y.H.); (P.L.)
- Department of Electrical Engineering and Electronics, University of Liverpool, Liverpool L69 3BX, UK;
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Zhu H, Zhao X, Li H, Zhao R. Revealing stable geometries and magic clusters of hexagonal boron nitride in the nucleation of chemical vapor deposition growth on Ni(111)/Cu(111) surfaces: a theoretical study. Phys Chem Chem Phys 2020; 22:4023-4031. [PMID: 32022041 DOI: 10.1039/c9cp06425g] [Citation(s) in RCA: 9] [Impact Index Per Article: 2.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/20/2022]
Abstract
To improve the quality of chemical vapor deposition (CVD)-prepared hexagonal boron nitride (h-BN), it is essential to understand the growth mechanism, particularly to learn the structures as well as their stabilities and kinetic evolutions of the formed clusters in the initial growth stage. Herein, we performed systematic studies on the stabilities of various geometries of different-/identical-sized BN clusters on (111) surfaces of Ni and Cu by density functional theory simulations. The results show that the stable configurations of different-sized clusters are those containing the most normal hexagons composed with alternate B and N atoms. There exist ultra-stable magic clusters on the (111) surfaces of both the metals. On Ni(111), the geometries of the magic clusters are composed of hexagons arranged in the core-shell structure, while they contain tetragons on the Cu(111) surface. The ultra-high stabilities of the magic clusters can be attributed to the comprehensive effect from the core-shell structure, high symmetry, edged atoms, and adsorption sites. The stable geometries of different-sized clusters as well as magic clusters present the vital roles of metal substrates in CVD-synthesis of h-BN and provide instructive information in improving the quality of h-BN by selecting appropriate metal substrates.
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Affiliation(s)
- Hongxia Zhu
- Henan Key Laboratory of Materials on Deep-Earth Engineering, School of Materials Science and Engineering, Henan Polytechnic University, Henan 454003, China.
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