Synthesis and Optoelectronic Properties of Indeno[1,2-b]fluorene-6,12-dione Donor–Acceptor–Donor Triads

Computational study of electron transport in halogen incorporated diindenotetracene compounds: crystal structure, charge transport and optoelectronic properties

The crystal structure, charge transport and optoelectronic properties of newly designed air-stable halogenated diindenotetracene (DIT) based OSCs are reported in this article. The structural, electronic and charge transport properties of the compounds are investigated using density functional theory (DFT) formalism. The air-stability and n-type characteristics are validated from their low lying LUMO energies (<-3.9 eV) and large electron affinity (EA) values (>3.0 eV). Compared with the parent DIT, the designed DIT-X compounds (except for DIT-I) exhibit larger electronic coupling (V^e is found to be ∼1.5 times larger than that of the bare DIT) and higher electron mobilities because of the effect of electron-withdrawing groups substituted at the peripheral positions of the DIT derivatives. The designed DIT-X compounds (except DIT-I) show high electron mobilities (∼2.4-5.4 cm² V^-1 s^-1), implying that the compounds can serve as promising electron transport materials. In addition, the UV-visible optical spectra of DIT derivatives (except DIT-F) display bathochromic shifts as compared to the bare DIT compound.

Synthesis of indenophenanthridine via a [4+2] annulation strategy: a “turn-off’’ Fe3+ ion sensor, practical application in live cell imaging and reversible acidochromism studies

An efficient protocol has been developed for the synthesis of a novel fluorescent probe, 1,2-disubstituted-indeno[1,2,3-gh]phenanthridine, derived from a series of α-oxo-ketene dithioacetals (OKDTAs) and indenoquinoline under essential conditions via a [4+2] annulation in excellent yield.

9,10-Dihydro- as-indacenodithiophenes: Isomers with an as-Indacene Core

Two isomers of 9,10-dihydro- as-indacenodithiophenes (DIDTs) and the corresponding diketones having an as-indacene core were synthesized. Their thermal, photophysical, and electrochemical properties were investigated, revealing that they depend on the direction of the fusion of the thiophene rings. For the DIDTs, the effect of the mode of ring fusion on the physical properties is discussed by comparison with the previously reported derivatives of DIDT isomers with an s-indacene core. The observed difference between the highest occupied molecular orbital (HOMO)/lowest unoccupied molecular orbital (LUMO) levels of the DIDT isomers is ascribed to the efficiency of π-conjugation, which depends on α- or β-linkage between the terminal thiophenes with the central benzene ring. In addition, the effect of the peripheral aromatic ring (thiophene or benzene) is elucidated by comparison with indeno[2,1- a]fluorene (DIF) bearing an as-indacene core. The HOMO levels of DIDTs are significantly raised compared to that of structurally related DIF because of electron-donating character of the thiophene rings. For the DIDT diketones, structural effect due to the proximate carbonyl groups is discussed by comparison with the isomers with remote carbonyl groups. In diketones bearing proximate carbonyl groups, the LUMO levels are destabilized owing to antibonding interaction between the carbonyl oxygen atoms, resulting in approach of the LUMO and LUMO+1 energy levels.

Triisopropylsilylethynyl-substituted indenofluorenes: carbonyl versus dicyanovinylene functionalization in one-dimensional molecular crystals and solution-processed n-channel OFETs

Carbonyl vs. dicyanovinylene functionalization in indenofluorenes leads to substantial differences in solid-state packings and results in significant variations (×1000) in electron mobilities.

Pentaleno[1,2-a:4,5']diacenaphthylenes: Uniquely Stabilized Pentalene Derivatives

We demonstrate the preparation of diacenaphthopentalene derivatives via a palladium-catalyzed dimerization of 1-iodo-2-arylethynyl-acenaphthylenes. The resulting 7,14-diarylpentaleno[1,2-a:4,5a']diacenaphthylenes, which contain four linearly fused five-membered rings, are benchtop stable and behave as hole-transporting or ambipolar semiconductors in organic field effect transistors. The X-ray crystal structure shows the important role of the fused naphthalene unit that enforces a formal pentalene subunit at the central five-membered rings and [5]-radialene-like structures at the proximal five-membered rings. Nucleus-independent chemical shift (NICS) calculations show the internal pentalene rings are intermediate in antiaromaticity character between known pentalene and dibenzopentalenes derivatives. The diacenaphthopentalene derivatives give high optical gap materials owing to a forbidden HOMO to LUMO transition, yet have narrow electrochemical gaps and are reduced at small negative potentials giving LUMO energy levels of -3.57 to -3.74 eV.

Indacenodibenzothiophenes: synthesis, optoelectronic properties and materials applications of molecules with strong antiaromatic character

Indeno[1,2-b]fluorenes (IFs), while containing 4n π-electrons, are best described as two aromatic benzene rings fused to a weakly paratropic s-indacene core. In this study, we find that replacement of the outer benzene rings of an IF with benzothiophenes allows the antiaromaticity of the central s-indacene to strongly reassert itself. Herein we report a combined synthetic, computational, structural, and materials study of anti- and syn-indacenodibenzothiophenes (IDBTs). We have developed an efficient and scalable synthesis for preparation of a series of aryl- and ethynyl-substituted IDBTs. NICS-XY scans and ACID calculations reveal an increasingly antiaromatic core from [1,2-b]IF to anti-IDBT, with syn-IDBT being nearly as antiaromatic as the parent s-indacene. As an initial evaluation, the intermolecular electronic couplings and electronic band structure of a diethynyl anti-IDBT derivative reveal the potential for hole and / or electron transport. OFETs constructed using this molecule show the highest hole mobilities yet achieved for a fully conjugated IF derivative.