Geometric and Electronic Structures of Terbium−Silicon Mixed Clusters (TbSin; 6 ≤ n ≤ 16)

Making Sense of the Growth Behavior of Ultra-High Magnetic Gd2-Doped Silicon Clusters

The growth behavior, stability, electronic and magnetic properties of the Gd₂Si_n^- (n = 3-12) clusters are reported, which are investigated using density functional theory calculations combined with the Saunders 'Kick' and the Artificial Bee Colony algorithm. The lowest-lying structures of Gd₂Si_n^- (n = 3-12) are all exohedral structures with two Gd atoms face-capping the Si_n frameworks. Results show that the pentagonal bipyramid (PB) shape is the basic framework for the nascent growth process of the present clusters, and forming the PB structure begins with n = 5. The Gd₂Si₅^- is the potential magic cluster due to significantly higher average binding energies and second order difference energies, which can also be further verified by localized orbital locator and adaptive natural density partitioning methods. Moreover, the localized f-electron can be observed by natural atomic orbital analysis, implying that these electrons are not affected by the pure silicon atoms and scarcely participate in bonding. Hence, the implantation of these elements into a silicon substrate could present a potential alternative strategy for designing and synthesizing rare earth magnetic silicon-based materials.

Bridging the gas and condensed phases for metal-atom encapsulating silicon- and germanium-cage superatoms: electrical properties of assembled superatoms

With the development of nanocluster (NC) synthesis methods in the gas phase, atomically precise NCs composed of a finite number of metal and semiconductor atoms have emerged. NCs are expected to be the smallest units for nanomaterials with various functions, such as catalysts, optoelectronic materials, and electromagnetic devices. The exploration of a stable NC called a magic number NC has revealed a couple of important factors, such as a highly symmetric geometric structure and an electronic shell closure, and a magic number behavior is often enhanced by mixing additional elements. A synergetic effect between geometric and electronic structures leads to the formation of chemically robust NC units called superatoms (SAs), which act as individual units assembled as thin films. The agglomeration of non-ligated bare SAs is desirable in fabricating the assembled SAs associated with intrinsic SA nature. The recent development of an intensive pulsed magnetron sputtering method opens up the scalable synthesis of SAs in the gas phase, enabling the fabrication of SA assembly coupled with the non-destructive deposition of a soft-landing technique. This perspective describes our recent progress in the investigation of the formation of binary cage SA (BCSA) assembled thin films composed of metal-atom encapsulating silicon-cage SAs (M@Si₁₆) and germanium-cage SAs (M@Ge₁₆), with a focus on their electrical properties associated with a conduction mechanism toward the development of new functional nanoscale materials.

Structural evolution and electronic properties of neutral and anionic TiASil (A = Sc, Ti; l ≤ 12): relatively stable TiASi4 as a structural unit

Molecular orbitals (MO) and the HOMO–LUMO energy gaps (HLgs) of neutral TiASi4 clusters (A = Sc, Ti).

Quantum chemistry calculations of the growth patterns, simulated photoelectron spectra, and electronic properties of LaASil (A = Sc, Y, La; l ≤ 10) compounds and their anions

The growth patterns, simulated photoelectron spectra, and electronic properties of LaASi_l (A = Sc, Y, and La; l ≤ 10) compounds and their anions were studied via quantum chemistry calculations using the Perdew-Burke-Ernzerhof (PBE) method and unprejudiced structural searching software ABCluster. The results revealed that the growth patterns of the most stable structures of neutral and anionic LaASi_l showed an adsorptive mode. The lowest-energy structures (LESs) of the LaASi_l (l ≤ 7) clusters were similar, except for those of anionic LaYSi₄^- and LaYSi₅^- and neutral LaScSi₇. Additionally, we investigated and calculated the photoelectron spectra, vertical detachment energies, adiabatic electron affinities, relative stability, charge transfer, magnetic moment, and chemical bond analysis of the LaASi_l ground-state structures. The La₂Si_l clusters exhibited higher stability than the LaYSi_l and LaScSi_l systems owing to their higher dissociation energies (DEs). The DEs of the LESs in the LaASi₃ molecule are higher than those of other clusters. Thus, the LaASi₃ cluster shows potential as a building framework for Si-based cluster materials with good stability. The natural population analysis data and chemical bond analysis results showed that the spd hybridization of the orbitals of the metal atoms in the LaASi_l system occurred. Except for the LaScSi₉ and LaScSi₁₀ clusters, the neutral LaASi_l compounds transform into the corresponding anions when an extra electron is accepted by the Si clusters.

Study on the growth behavior and photoelectron spectroscopy of neodymium-doped silicon nanoclusters NdSin0/- (n = 8-20) with a double-hybrid density functional theory

Structural evolution, magnetic moment, and thermochemical and spectral properties of NdSi_n^0/- (n = 8-20) nanoclusters were studied. Optimized structures for NdSi_n demonstrated that the configuration with quintet ground state prefers Nd-substituted for a Si of the most stable Si_n + 1 (n = 8-11) structure to Nd-linked configuration with Si₉ tricapped trigonal prism subcluster (n = 12-19). Finally, the configuration prefers to Nd-encapsulated into Si cage framework (n = 20). For anion, the evolution at the quartet state prefers Nd-linked structure for n = 8-19 (excluded 9), and prefers Nd-encapsulated structure of n = 20. The spectral information including electron affinity, vertical detachment energy, and simulated photoelectron spectroscopy were also observed. The 4f electrons of Nd atom in NdSi_n with n = 8-10 hardly participate in bonding, but take part in remaining neutral clusters and all anionic NdSi_n^- clusters. The calculations of average bond energy, HOMO-LUMO gap, and chemical bonding analyses reveal that NdSi₂₀^- possesses perfect thermodynamic and ideal chemical stability, making it as the most appropriate constitutional units for novel multi-functional semiconductors.

Structural and electronic properties of exohedrally doped neutral silicon clusters LnSin (n = 5, 10; Ln = Sm, Eu, Yb)

Lanthanide-doped silicon clusters have been extensively studied in the fields of optoelectronics, magnetism and nanomaterials during the last decade. Herein, systematic structure searches for typical neutral clusters of lanthanide-doped silicon clusters LnSin (n = 5, 10; Ln = Sm, Eu, Yb) have been performed by means of density functional theory coupled with the "stochastic kicking" global search technique. It is found that the Ln atom in LnSin prefers to locate on the surface of Sin to form an exohedral structure, and this exohedral configuration may dominate the nascent structure of LnSin. The spin density and Mulliken population analyses indicate that LnSin clusters possess remarkable magnetic moments (except for YbSin), which are mainly supplied by the Ln 4f electrons (except for Yb). Density of states visually shows the significant spin polarization for open-shell structures of SmSin and EuSin. As for the YbSin (n = 5, 10) system, it has a closed-shell electronic structure with a large HOMO-LUMO gap of 2.72 eV. Bonding analysis, including localized orbital locator and electron density difference, shows that the Si-Si covalent interaction and Sm-Si electrostatic interaction are important for the structural stability of LnSin.

The stability, electronic, and magnetic properties of rare-earth doped silicon-based clusters

The rare-earth doped silicon-based clusters exhibit remarkable structural, physical, and chemical properties, which make them attractive candidates as building units in designing of cluster-based materials with special optical, electronic, and magnetic properties. The structural, stability, electronic, and magnetic properties of pure silicon Si_n + 1 (n = 1-9) and rare-earth doped clusters Si_nEu (n = 1-9) are investigated using the "stochastic kicking" (SK) global search technique combined with density functional theory (DFT) calculations. It was found that: 1) the ground state structures of pure silicon clusters tend to form compact structures rather than cages with the increase of cluster size; 2) the ground state structures for doped species were found to be additional or substitutional sites, and the rare-earth atoms tend to locate on the surface of the silicon clusters; 3) the average binding energy of the doped clusters increased gradually and exhibited the final phenomenon of saturation with the increase of clusters size. The average binding energy of doped clusters was slightly higher than that of pure silicon clusters of the same size, which indicated that the rare-earth atom encapsulated by silicon enhanced the stability of the silicon clusters to some degree; 4) the doped clusters have strong total magnetic moments, which mainly originated from the contribution of rare-earth atoms, whereas the contribution of silicon atoms were almost negligible. As the cluster size increased, the total magnetic moments of binary mixed clusters tended to be stable.

Structural determination of niobium-doped silicon clusters by far-infrared spectroscopy and theory

The structures of niobium doped silicon cluster cations are determined by a combination of infrared multiple photon dissociation spectroscopy and density functional theory calculations.

Structural assignment, and electronic and magnetic properties of lanthanide metal doped silicon heptamers Si7M0/− with M = Pr, Gd and Ho

The ground state geometries of neutral and anionic lanthanide-metal-doped silicon clusters Si₇M^0/− with M = Pr, Gd and Ho were determined by quantum chemical (DFT) computations and the previous experimental photoelectron spectra were assigned.

Density functional study on the structural, electronic, and magnetic properties of 3d transition-metal-doped Au5 clusters

Density functional calculations have been performed for the structural, electronic, and magnetic properties of Au5M (M = Sc-Zn) clusters. Geometry optimizations indicate that the M atoms in low-energy Au5M isomers prefer to occupy the most highly coordinated position. The ground-state clusters except Au5Sc possess a planar structure. The vibrational spectra of the doped clusters are completely different from that of a pure gold cluster. The relative stability and chemical activity are investigated through the averaged binding energy and energy gap for the most stable Au5M clusters. It is found that the impurity atoms (not including the Zn atom) can enhance the thermal stability of the host cluster. The chemical activity of Au5M clusters is higher than that of the Au6 cluster. The calculated energy gaps are in accord with available approximate experimental data. The vertical ionization potential, the electron affinity, and photoelectron spectrum are computed and simulated theoretically for all of the ground-state clusters. The magnetism analyses show that the magnetic moment of these Au5M clusters varies from 0 to 5 μB by substituting a Au atom in a Au6 cluster with various M atoms and is mainly localized on the M atom for M = Ti-Ni.

A combined stochastic search and density functional theory study on the neutral and charged silicon-based clusters MSi6 (M = La, Ce, Yb and Lu)

Structures and simulated photoelectron spectra of MSi₆⁻ (M = La, Ce, Yb and Lu).

DENSITY FUNCTIONAL THEORY STUDIES OF CHARGED, COPPER-DOPED, SMALL SILICON CLUSTERS, ${\rm CuSi}_{n}^{+}/{\rm CuSi}_{n}^{-}$ (n = 1–7)

The structures and stabilities of charged, copper-doped, small silicon clusters [Formula: see text] (n = 1–7) have been systematically investigated using the density functional theory method at the B3LYP/6-311+G* level. For comparison, the geometries of neutral CuSi n clusters were also optimized at the same level, although most of them have been reported previously [see Xiao CY, Abraham A, Quinn R, Hagelberg F, Comparative study on the interaction of scandium and copper atoms with small silicon clusters, J Phys Chem A106:11380, 2002; Liu X, Zhao GF, Guo LJ, Wang XW, Zhang J, Jing Q, Luo YH, First-principle studies of the geometries and electronic properties of Cu m Si n (2 ≤ m + n ≤ 7) clusters, Chin Phys16:3359, 2007]. Our results for the ground state structures of neutral CuSi n clusters agree well with those of Liu et al. and Xiao et al. except for CuSi3 and CuSi7 . Removing or adding an electron greatly changes some ground state structures, i.e. for [Formula: see text], [Formula: see text], [Formula: see text], [Formula: see text], and [Formula: see text]; others are almost unchanged, e.g. [Formula: see text], [Formula: see text], [Formula: see text], [Formula: see text], [Formula: see text]. The ground states of ionic [Formula: see text] are all singlet, except for the smaller CuSi- and [Formula: see text]. Based on the optimized geometries, various energetic properties, including binding energies, second-order difference energies, the highest occupied molecular orbit and the lowest unoccupied molecular orbital (HOMO–LUMO) energy gaps, ionization potential and electron affinities, were calculated for the most stable isomers of [Formula: see text]. All the results indicate that anionic [Formula: see text] and cationic [Formula: see text] clusters are relatively stable. The higher stability of the latter has been confirmed by Beck's observations.

The Bromide - Carbon Monoxide Gas Phase Complex: Anion Photoelectron Spectroscopy and Ab Initio Calculations

The anion photoelectron spectrum of the bromide–carbon monoxide complex is presented in combination with supporting ab initio calculations. The spectrum features transitions between anion and neutral van der Waals complexes, Br⋯CO. A stabilization energy of 0.14 ± 0.05 eV is extracted from the spectrum, while the predicted binding energy for the anion complex is 9.9 kJ mol–1 from CCSD(T)/aug-cc-pVTZ calculations. The electron affinity of the Br⋯CO complex is 3.50 ± 0.05 eV. The ab initio calculations reveal a previously unreported minimum for the neutral radical complex, namely the van der Waals Br⋯OC linear complex.