Band Electronic Structure of One- and Two-Dimensional Pentacene Molecular Crystals

Indications for a Direct Singlet Fission Mechanism in TIPS-Pentacene Crystals from Hybrid DFT/MRCI and Molecular Mechanics Studies

A hybrid quantum mechanics/molecular mechanics setup was used to model the singlet fission (SF) of electronically excited 6,13-bis(triisopropylsilylethynyl)pentacene (TIPS-pentacene) in the crystalline phase. The optically bright S1bright state possesses nearly identical excitation energies and oscillator strengths in the two nonequivalent dimer units with large and small structural overlap, respectively. A shearing/tilting motion of the two slip-stacked TIPS-pentacene building blocks is the key for stabilizing the singlet-coupled triplet-pair state, 1(TT), in the large/small overlap situation. In both dimer models, the S1bright and 1(TT) states swap energetic order upon geometry relaxation, indicative of strong nonadiabatic coupling between these states and a direct SF mechanism in TIPS-pentacene crystals, at variance with unsubstituted pentacene where charge-transfer contributions are substantial in V-shaped substructures. The overall energy balance E(S1bright) - (E(T1) + E(T1)) remains positive at all investigated nuclear arrangements. The ferromagnetically coupled 5(TT) state lies energetically too high to take part in the SF mechanism.

Growth of Pentacene Crystals by Naphthalene Flux Method

We report the crystal growth of pentacene from a solution of naphthalene. The solubility of pentacene in naphthalene was evaluated by optical absorption at elevated temperature. The crystal growth was performed in an H-shaped sealed glass tube or metal vessels sealed with ultrahigh-vacuum compatible flanges placed in heated two-zone aluminum blocks. The obtained crystals had a single-crystal-like appearance and flat surface. They were made of aligned microtwins of the "bulk type" (interlayer spacing 14.5 Å) polymorph.

Switching of Electron and Ion Conductions by Reversible H2O Sorption in n-Type Organic Semiconductors

Polar H₂O molecules generally act as trapping sites and suppress the electron mobility of n-type organic semiconductors, making chemical design of H₂O-tolerant and responsive n-type semiconductors an important step toward multifunctional electron-ion coupling devices. The introduction of effective electrostatic interactions between potassium ions (K⁺) and carboxylate (-COO^-) anions into the electron-transporting naphthalenediimide π-framework enables the design of high-performance H₂O-tolerant n-type semiconductors with a reversible H₂O adsorption-desorption ability, where the electron mobility and K⁺ ionic conductivity were coupled with the reversible H₂O sorption behavior. The reversible H₂O adsorption into the crystals enhanced the electron mobility from 0.04 to 0.28 cm² V^-1 s^-1, whereas the K⁺ ionic conductivity decreased from 3.4 × 10^-5 to 4.7 × 10^-7 S cm^-1. Because this reversible electron-ion conducting switch is responsive to H₂O sorption behavior, it is a strong candidate for H₂O gating carrier transport systems.

Impact of Hydrogen Bonds Limited Dipolar Disorder in High-k Polymer Gate Dielectric on Charge Carrier Transport in OFET

The paper contributes to the characterization and understanding the mutual interactions of the polar polymer gate dielectric and organic semiconductor in organic field effect transistors (OFETs). It has been shown on the example of cyanoethylated polyvinylalcohol (CEPVA), the high-k dielectric containing strong polar side groups, that the conditions during dielectric layer solidification can significantly affect the charge transport in the semiconductor layer. In contrast to the previous literature we attributed the reduced mobility to the broader distribution of the semiconductor density of states (DOS) due to a significant dipolar disorder in the dielectric layer. The combination of infrared (IR), solid-state nuclear magnetic resonance (NMR) and broadband dielectric (BDS) spectroscopy confirmed the presence of a rigid hydrogen bonds network in the CEPVA polymer. The formation of such network limits the dipolar disorder in the dielectric layer and leads to a significantly narrowed distribution of the density of states (DOS) and, hence, to the higher charge carrier mobility in the OFET active channel made of 6,13-bis(triisopropylsilylethynyl)pentacene. The low temperature drying process of CEPVA dielectric results in the decreased energy disorder of transport states in the adjacent semiconductor layer, which is then similar as in OFETs equipped with the much less polar poly(4-vinylphenol) (PVP). Breaking hydrogen bonds at temperatures around 50 °C results in the gradual disintegration of the stabilizing network and deterioration of the charge transport due to a broader distribution of DOS.

Single-photon upconversion in 6-pentaceneone crystal from bulk to ultrathin flakes

Phonon-assisted single-photon upconversion, which was not previously reported in organic materials, has been demonstrated in the 6-pentaceneone crystal through the linear pumping power dependent anti-Stokes photoluminescence (ASPL), nanoseconds PL lifetime and quenched ASPL at low temperature. Furthermore, the 6-pentaceneone crystal can be mechanically exfoliated to ultrathin flakes and it exhibits thickness-dependent photoluminescence.

The Importance of Electronic Dimensionality in Multiorbital Radical Conductors

The exceptional performance of oxobenzene-bridged bis-1,2,3-dithiazolyls 6 as single-component neutral radical conductors arises from the presence of a low-lying π-lowest unoccupied molecular orbital, which reduces the potential barrier to charge transport and increases the kinetic stabilization energy of the metallic state. As part of ongoing efforts to modify the solid-state structures and transport properties of these so-called multiorbital materials, we report the preparation and characterization of the acetoxy, methoxy, and thiomethyl derivatives 6 (R = OAc, OMe, SMe). The crystal structures are based on ribbonlike arrays of radicals laced together by S···N' and S···O' secondary bonding interactions. The steric and electronic effects of the exocyclic ligands varies, affording one-dimensional (1D) π-stacked radicals for R = OAc, 1D cofacial dimer π-stacks for R = SMe, and a pseudo two-dimensional (2D) brick-wall arrangement for R = OMe. Variable-temperature magnetic and conductivity measurements reveal strong antiferromagnetic interactions and Mott insulating behavior for the two radical-based structures (R = OAc, OMe), with lower room-temperature conductivities (σ_RT ≈ 1 × 10^-4 and ∼1 × 10^-3 S cm^-1, respectively) and higher thermal activation energies ( E_act = 0.24 and 0.21 eV, respectively) than found for the ideal 2D brick-wall structure of 6 (R = F), where σ_RT ≈ 1 × 10^-2 S cm^-1 and E_act = 0.10 eV. The performance of R = OMe, OAc relative to that of R = F, is consistent with the results of density functional theory band electronic structure calculations, which indicate a lower kinetic stabilization energy of the putative metallic state arising from their reduced electronic dimensionality.

Benzoquinone-Bridged Heterocyclic Zwitterions as Building Blocks for Molecular Semiconductors and Metals

In pursuit of closed-shell building blocks for single-component organic semiconductors and metals, we have prepared benzoquino-bis-1,2,3-thiaselenazole QS, a heterocyclic selenium-based zwitterion with a small gap (λ_max = 729 nm) between its highest occupied and lowest unoccupied molecular orbitals. In the solid state, QS exists in two crystalline phases and one nanocrystalline phase. The structures of the crystalline phases (space groups R3 c and P2₁/ c) have been determined by high-resolution powder X-ray diffraction methods at ambient and elevated pressures (0-15 GPa), and their crystal packing patterns have been compared with that of the related all-sulfur zwitterion benzoquino-bis-1,2,3-dithiazole QT (space group Cmc2₁). Structural differences between the S- and Se-based materials are interpreted in terms of local intermolecular S/Se···N'/O' secondary bonding interactions, the strength of which varies with the nature of the chalcogen (S vs Se). While the perfectly two-dimensional "brick-wall" packing pattern associated with the Cmc2₁ phase of QT is not found for QS, all three phases of QS are nonetheless small band gap semiconductors, with σ_RT ranging from 10^-5 S cm^-1 for the P2₁/ c phase to 10^-3 S cm^-1 for the R3 c phase. The bandwidths of the valence and conduction bands increase with applied pressure, leading to an increase in conductivity and a decrease in thermal activation energy E_act. For the R3 c phase, band gap closure to yield an organic molecular metal with a σ_RT of ∼10² S cm^-1 occurs at 6 GPa. Band gaps estimated from density functional theory band structure calculations on the ambient- and high-pressure crystal structures of QT and QS correlate well with those obtained experimentally.

Polaron dynamics in oligoacene stacks

The dynamical properties of polarons in organic molecular crystals are numerically studied in the framework of an one-dimensional Holstein-Peierls approach that includes lattice relaxation. Particularly, the present study is aimed at designing a tight-binding Hamiltonian that can address the charge transport mechanism in model oligoacene stacks. Our findings show that the definition of a particular oligoacene system depends strictly on the employed set of parameters. The usefulness of this methodology is highlighted by analyzing the polaron's saturation velocity and, consequently, its stability in the presence of a damping term and substantially high electric field strengths. Importantly, these results may be useful for the designing of novel materials to be employed in the field of molecular electronics.

Single-Crystal Pentacene Valence-Band Dispersion and Its Temperature Dependence

The electronic structures of the highest occupied molecular orbital (HOMO) or the HOMO-derived valence bands dominate the transport nature of positive charge carriers (holes) in organic semiconductors. In the present study, the valence-band structures of single-crystal pentacene and the temperature dependence of their energy-momentum dispersion relations are successfully demonstrated using angle-resolved ultraviolet photoelectron spectroscopy (ARUPS). For the shallowest valence band, the intermolecular transfer integral and effective mass of the holes are evaluated as 43.1 meV and 3.43 times the electron rest mass, respectively, at room temperature along the crystallographic direction for which the widest energy dispersion is expected. The temperature dependence of the ARUPS results reveals that the transfer integral values (hole effective mass) are enhanced (reduced) by ∼20% on cooling the sample to 110 K.

Perovskite Solar Cells: Influence of Hole Transporting Materials on Power Conversion Efficiency

The recent advances in perovskite solar cells (PSCs) created a tsunami effect in the photovoltaic community. PSCs are newfangled high-performance photovoltaic devices with low cost that are solution processable for large-scale energy production. The power conversion efficiency (PCE) of such devices experienced an unprecedented increase from 3.8 % to a certified value exceeding 20 %, demonstrating exceptional properties of perovskites as solar cell materials. A key advancement in perovskite solar cells, compared with dye-sensitized solar cells, occurred with the replacement of liquid electrolytes with solid-state hole-transporting materials (HTMs) such as 2,2',7,7'-tetrakis-(N,N-di-4-methoxyphenylamino)-9,9'-spirobifluorene (Spiro-OMeTAD), which contributed to enhanced PCE values and improved the cell stability. Following improvements in the perovskite crystallinity to produce a smooth, uniform morphology, the selective and efficient extraction of positive and negative charges in the device dictated the PCE of PSCs. In this Review, we focus mainly on the HTMs responsible for hole transport and extraction in PSCs, which is one of the essential components for efficient devices. Here, we describe the current state-of-the-art in molecular engineering of hole-transporting materials that are used in PSCs and highlight the requisites for market-viability of this technology. Finally, we include an outlook on molecular engineering of new functional HTMs for high efficiency PSCs.

Band Structure Engineering by Substitutional Doping in Solid-State Solutions of [5-Me-PLY(O,O)]2B(1-x)Be(x) Radical Crystals

We report the substitutional doping of solid-state spiro-bis(5-methyl-1,9-oxido-phenalenyl)boron radical ([2]2B) by co-crystallization of this radical with the corresponding spiro-bis(5-methyl-1,9-oxido-phenalenyl)beryllium compound ([2]2Be). The pure compounds crystallize in different space groups ([2]2B, P1̅, Z = 2; [2]2Be, P2₁/c, Z = 4) with distinct packing arrangements, yet we are able to isolate crystals of composition [2]2B(1-x)Be(x), where x = 0-0.59. The phase transition from the P1̅ to the P2₁/c space group occurs at x = 0.1, but the conductivities of the solid solutions are enhanced and the activation energies reduced for values of x = 0-0.25. The molecular packing is driven by the relative concentration of the spin-bearing ([2]2B) and spin-free ([2]2Be) molecules in the crystals, and the extended Hückel theory band structures show that the progressive incorporation of spin-free [2]2Be in the lattice of the [2]2B radical (overall bandwidth, W = 1.4 eV, in the pure compound) leads to very strong narrowing of the bandwidth, which reaches a minimum at [2]2Be (W = 0.3 eV). The results provide a graphic picture of the structural transformations undergone by the lattice, and at certain compositions we are able to identify distinct structures for the [2]2B and [2]2Be molecules in a single crystalline phase.

A polymorph of the 6,13-dichloropentacene organic semiconductor: crystal structure, semiconductor measurements and band structure calculations

A new polymorph of the 6,13-dichloropentacene organic semiconductor was discovered, and its properties were compared with those of an earlier reported polymorph.

Highly oriented polymer semiconductor films compressed at the surface of ionic liquids for high-performance polymeric organic field-effect transistors

A novel and versatile method to align polymer semiconductors is demonstrated. Spreading and subsequent mechanical compression of a polymer thin film on an ionic liquid's surface yield a polymer thin film that has high uniaxial orientation of the polymer backbone, which is tested for typical polymer semiconductors of PB16TTT, PNDTBTC20, and P3HT. TFTs fabricated by the method exhibit significantly higher mobility compared to TFTs fabricated using a conventional spin-coating process.

Atomically flat, large-sized, two-dimensional organic nanocrystals

Large-sized, 2D single crystals of perylene are grown by both solution-cast and physical vapor transport methods. The crystals have a atomically flat parallelogram morphology and the aspect ratios of the lateral extension compared to the thickness are up to 10(3) . The atomically flat feature leads to good interface contact, making a single-crystal field-effect transistor with higher mobility. The mobility of atomically flat crystals can be 10(3) -10(4) times higher than rough crystals.

n-Type organic semiconductors in organic electronics

Organic semiconductors have been the subject of intensive academic and commercial interest over the past two decades, and successful commercial devices incorporating them are slowly beginning to enter the market. Much of the focus has been on the development of hole transporting, or p-type, semiconductors that have seen a dramatic rise in performance over the last decade. Much less attention has been devoted to electron transporting, or so called n-type, materials, and in this paper we focus upon recent developments in several classes of n-type materials and the design guidelines used to develop them.

Controlled deposition of highly ordered soluble acene thin films: effect of morphology and crystal orientation on transistor performance

Controlling the morphology of soluble small molecule organic semiconductors is crucial for the application of such materials in electronic devices. Using a simple dip-coating process we systematically vary the film drying speed to produce a range of morphologies, including oriented needle-like crystals. Structural characterization as well as electrical transistor measurements show that intermediate drying velocities produce the most uniformly aligned films.

Diazapentacene derivatives as thin-film transistor materials: morphology control in realizing high-field-effect mobility

5,7,12,14-Tetrachloro-6,13-diaza-6,13-dihydropentacene (TCDAHP) and 5,7,12,14-tetrachloro-6,13-diazapentacene (TCDAP) were synthesized and assessed as the active channel materials for thin-film transistor applications. Analyses of the crystal structures of these molecules revealed that both exhibited slipped pi-pi stacking of the long and fused aromatic moiety. Although the packing features of the two compounds are basically identical, their highest occupied molecular orbitals, which are relevant to hole transport, are very different. Better mobility was predicted for TCDAHP over TCDAP based on the dimeric structure in the X-ray coordinates. The morphologies of thin films of TCDAHP and TCDAP prepared by thermal evaporation depend critically on the substrate on which the molecules were deposited: from the amorphous state on a SiO(2)/Si surface to the crystalline state on a pentacene buffer layer surface. The performance of thin-film transistors prepared on various substrate surfaces was studied. While no field-effect mobility was observed for these films deposited on SiO(2)/Si, a high mobility of 1.4 cm(2)/(V s) for the TCDAHP film was achieved when deposited on a pentacene buffer layer prepared on a rubbed monolayer of n-nonyltrichlorosilane on a SiO(2)/Si surface. A similar device prepared from TCDAP gave a mobility of 0.13 cm(2)/(V s).

Modelling charge transport in organic semiconductors: from quantum dynamics to soft matter

The charge carrier dynamics in organic semiconductors has been traditionally discussed with the models used in inorganic crystalline and amorphous solids but this analogy has severe limitations because of the more complicated role of nuclear motions in organic materials. In this perspective, we discuss how a new approach to the modelling of charge transport is emerging from the alliance between the conventional quantum chemical methods and the methods more traditionally used in soft-matter modelling. After describing the conventional limit cases of charge transport we discuss the problems arising from the comparison of the theory with the experimental and computational results. Several recent applications of numerical methods based on the propagation of the wavefunction or kinetic Monte Carlo methods on soft semiconducting materials are reviewed.

Crystal structures and transistor properties of phenyl-substituted tetrathiafulvalene derivatives

The crystal structures, thin-film properties, and field-effect transistor (FET) characteristics of tetrathiafulvalene (TTF) derivatives with two phenyl groups are systematically investigated. The highest mobility, 0.11 cm(2) V(-1) s(-1), is observed in biphenyl-substituted TTF (1). The correlation between the crystal structures and the FET properties demonstrates that good transistor properties are associated with two-dimensional intermolecular interaction, which is achieved when the molecules are standing nearly perpendicular to the substrate. Since these TTF derivatives are strong electron donors, the use of a metallic charge-transfer salt (TTF)(TCNQ) as the source and drain electrodes has resulted in a considerable reduction of the off current (TCNQ: tetracyanoquinodimethane).

Electronic structures of the highest occupied molecular orbital bands of a pentacene ultrathin film

We report the energy dispersions of the highest occupied molecular orbitals (HOMO)-derived bands of a pentacene (Pn) thin film, whose in-plane structure resembles closely that of the ab plane of a low-density bulk Pn phase. Our present photoemission result indicates that the overlap of the pi-orbitals of adjacent Pn molecules is larger than what was expected from theoretical calculations. Further, of the two HOMO-derived bands, the large dispersion width of the band with higher binding energy suggests that this one mainly contributes to the bandlike charge transport in a Pn crystal.

Hole-vibronic coupling in oligothiophenes: impact of backbone torsional flexibility on relaxation energies

Density functional theory calculations together with highly resolved gas-phase ultraviolet photoelectron spectroscopy have been applied to oligothiophene chains with up to eight thiophene rings. One of the important parameters governing the charge transport properties in the condensed phase is the amount of energy relaxation upon ionization. Here, we investigate the impact on this parameter of the backbone flexibility present in oligothiophenes as a result of inter-ring torsional motions. With respect to oligoacenes that are characterized by a coplanar and rigid backbone, the torsional flexibility in oligothiophenes adds to the relaxation energy and leads to the broadening of the first ionization peak, making its analysis more complex.

Orientation of pentacene molecules on SiO2: From a monolayer to the bulk

Near edge x-ray absorption fine structure (NEXAFS) spectroscopy is used to study the orientation of pentacene molecules within thin films on SiO2 for thicknesses ranging from monolayers to the bulk (150 nm). The spectra exhibit a strong polarization dependence of the pi* orbitals for all films, which indicates that the pentacene molecules are highly oriented. At all film thicknesses the orientation varies with the rate at which pentacene molecules are deposited, with faster rates favoring a thin film phase with different tilt angles and slower rates leading to a more bulklike orientation. Our NEXAFS results extend previous structural observations to the monolayer regime and to lower deposition rates. The NEXAFS results match crystallographic data if a finite distribution of the molecular orientations is included. Damage to the molecules by hot electrons from soft x-ray irradiation eliminates the splitting between nonequivalent pi* orbitals, indicating a breakup of the pentacene molecule.

Synthesis, Ionisation Potentials and Electron Affinities of Hexaazatrinaphthylene Derivatives

Several hexaazatrinaphthylene derivatives and a tris(thieno)hexaazatriphenylene derivative have been synthesised by reaction of the appropriate diamines with hexaketocyclohexane. The crystal structure of 2,3,8,9,14,15-hexachloro-5,6,11,12,17,18-hexaazatrinaphthylene has been determined by X-ray diffraction; this reveals a molecular structure in good agreement with that predicted by density functional theory (DFT) calculations and pi-stacking with an average spacing between adjacent molecular planes of 3.18 A. Solid-state ionisation potentials have been measured by using UV photoelectron spectroscopy and fall in the range of 5.99 to 7.76 eV, whereas solid-state electron affinities, measured using inverse photoelectron spectroscopy, vary in the range -2.65 to -4.59 eV. The most easily reduced example is a tris(thieno)hexaazatriphenylene substituted with bis(trifluoromethyl)phenyl groups; DFT calculations suggest that the highly exothermic electron affinity is due both to the replacement of the outermost phenylene rings of hexaazatrinaphthylene with thieno groups and to the presence of electron-withdrawing bis(trifluoromethyl)phenyl groups. The rather exothermic electron affinities, the potential for adopting pi-stacked structures and the low intramolecular reorganisation energies obtained by DFT calculations suggest that some of these molecules may be useful electron-transport materials.

Thermally Induced Solid-State Phase Transition of Bis(triisopropylsilylethynyl) Pentacene Crystals

Bis(triisopropylsilylethynyl) pentacene (TIPS pentacene) is a functionalized pentacene derivative designed to enhance both the solution solubility and solid-state packing of pentacene. In this paper, we report our observations of a solid-state phase transition in TIPS pentacene crystals upon heating or cooling. Evidence from differential scanning calorimetry (DSC), hot-stage optical microscopy, as well as high-temperature X-ray and electron diffraction are presented. A reasonable match with experimental data is obtained with molecular modeling. Our results reveal that the transition is associated with a conformational reorganization of the TIPS side groups, accompanied by a slight decrease in the acene-to-acene spacing and a shift of the overlap between the neighboring pentacene units. The observed cracking should be avoided or minimized in TIPS pentacene-based thin film transistors to maintain their relatively high charge carrier mobility.

Intermolecular Charge Transfer between Heterocyclic Oligomers. Effects of Heteroatom and Molecular Packing on Hopping Transport in Organic Semiconductors

For electron or hole transfer between neighboring conducting polymer strands or oligomers, the intrinsic charge-transfer rate is dictated by the charge-resonance integral and by the reorganization energy due to geometric relaxation. To explain conduction anisotropy and other solid-state effects, a multivariate, systematic analysis of bandwidth as a function of intermolecular orientations is undertaken for a series of oligoheterocycles, using first-principles methods. While cofacial oligomers show the greatest bandwidths at a given intermolecular C-C contact distance, for a fixed center-to-center intermolecular distance, tilted pi-stacking increases pi-overlap (particularly for LUMO orbitals) and decreases electrostatic repulsion, yielding optimum tilt angles for packing of approximately 40-60 degrees at small intermolecular separations. The calculations also reveal that bandwidths and intrinsic mobilities of holes and electrons in conjugated oligoheterocycles can be quite comparable.