Electronic Properties of Si and Ge Atoms Doped In Clusters: InnSim and InnGem

Structural evolution and electronic properties of pure and semiconductor atom doped in clusters: Inn - , Inn Si- , and Inn Ge- (n = 3-16)

The bonding and electronic properties of In_n ^- , In_n Si^- , and In_n Ge^- (n = 3-16) clusters have been computationally investigated. An intensive global search for the ground-state structures of these clusters were conducted using the genetic algorithm coupled with density functional theory (DFT). The ground-state structures of these clusters have been identified through the comparison between simulated photoelectron spectra (PES) of the found lowest-energy isomers and the experimentally measured ones. Doping semiconductor atom (Si or Ge) can significantly change the structures of the In clusters in most sizes, and the dopant prefers to be surrounded by In atoms. There are three structural motifs for In_n X^- (X = Si, Ge, n = 3-16), and the transition occurs at sizes n = 5 and 13. All In_n Si^- and In_n Ge^- share the same configurations and similar electronic properties except for n = 8. Among all above studied clusters, In₁₃ ^- stands out with the largest vertical detachment energy (VDE), HOMO-LUMO gap, (E_b ) and second order energy difference Δ² E due to its closed electronic shell of (1S)² (1P)⁶ (1D)¹⁰ (2S)² (1F)¹⁴ (2P)⁶ . Similarly, the neutral In₁₂ X (X = Si, Ge) clusters are also identified as superatoms but with electronic configuration of (1S)² (1P)⁶ (2S)² (1D)¹⁰ (1F)¹⁴ (2P)⁶ .

Structural evolution and electronic properties of CoSin− (n = 3–12) clusters: mass-selected anion photoelectron spectroscopy and quantum chemistry calculations

Experimental measurements and theoretical calculations show that CoSi₁₀⁻ has the highest vertical detachment energy among all the CoSi_n⁻ (n = 3–12) clusters, implying CoSi₁₀⁻ has special stability.

Chromium-doped germanium clusters CrGen (n = 1-5): geometry, electronic structure, and topology of chemical bonding

The structure and properties of small neutral and cationic CrGen(0,+) clusters, with n from 1 to 5, were investigated using quantum chemical calculations at the CASSCF/CASPT2 and DFT/B3LYP levels. Smaller clusters prefer planar geometries, whereas the lowest-lying electronic states of the neutral CrGe4, CrGe5, and cationic CrGe5+ forms exhibit nonplanar geometries. Most of the clusters considered prefer structures with high-spin ground state and large magnetic moments. Relative to the values obtained for the pure Gen clusters, fragmentation energies of doped CrGen clusters are smaller when n is 3 and 4 and larger when n = 5. The averaged binding energy tends to increase with the increasing number of Ge atoms. For n = 5, the binding energies for Ge5, CrGe5, and CrGe5+ are similar to each other, amounting to approximately 2.5 eV. The Cr atom acts as a general electron donor in neutral CrGen clusters. Electron localization function (ELF) analyses suggest that the chemical bonding in chromium-doped germanium clusters differs from that of their pure or Li-doped counterparts and allow the origin of the inherent high-spin ground state to be understood. The differential DeltaELF picture, obtained in separating both alpha and beta electron components, is consistent with that derived from spin density calculations. For CrGen, n = 2 and 3, a small amount of d-pi back-donation is anticipated within the framework of the proposed bonding model.