Initial Steps of Rubicene Film Growth on Silicon Dioxide

Synthesis and Properties of Rubicene-Based Aromatic π-Conjugated Compounds as Five-Membered Ring Embedded Planar Nanographenes

Polycyclic aromatic hydrocarbons consisting of two or three rubicene substructures were designed as π-conjugated compounds embedding five-membered rings. The target compounds with t-butyl groups were synthesized by the Scholl reaction of precursors consisting of 9,10-diphenylanthracene units, even though a partially precyclized precursor was required for the synthesis of the trimer. These compounds were isolated as stable and dark blue solids. Single-crystal X-ray analysis and DFT calculations revealed the planar aromatic framework of these compounds. In the electronic spectra, the absorption and emission bands were considerably red-shifted compared with those of the reference rubicene compound. In particular, the emission band of the trimer extended to the near-IR region while retaining the emissive property. The narrowed HOMO-LUMO gap with the extension of the π-conjugation was confirmed by cyclic voltammetry and DFT calculations.

Post-Growth Dynamics and Growth Modeling of Organic Semiconductor Thin Films

The ability to control the properties of organic thin films is crucial for obtaining highly performant thin-film devices. However, thin films may experience post-growth processes, even when the most sophisticated and controlled growth techniques such as organic molecular beam epitaxy (OMBE) are used. Such processes can modify the film structure and morphology and, thus, the film properties ultimately affecting device performances. For this reason, probing the occurrence of post-growth evolution is essential. Equally importantly, the processes responsible for this evolution should be addressed in view of finding a strategy to control and, possibly, leverage them for driving film properties. Here, nickel-tetraphenylporphyrin (NiTPP) thin films grown by OMBE on highly oriented pyrolytic graphite (HOPG) are selected as an exemplary system exhibiting a remarkable post-growth morphology evolution consistent with Ostwald-like ripening. To quantitatively describe the growth, the height-height correlation function (HHCF) analysis of the atomic force microscopy (AFM) images is carried out, clarifying the role of the post-growth evolution as an integral part of the whole growth process. The set of scaling exponents obtained confirms that the growth is mainly driven by diffusion combined with the presence of step-edge barriers, in agreement with the observed ripening phenomenon. Finally, the results together with the overall approach adopted demonstrate the reliability of the HHCF analysis in systems displaying post-growth evolution.

Synthesis and Photophysical Properties of Soluble N-Doped Rubicenes via Ruthenium-Catalyzed Transfer Hydrogenative Benzannulation

Ruthenium-catalyzed butadiene-mediated benzannulation enabled the first synthesis of 3,10-(di-tert-butyl)rubicene and its N-doped derivatives as well as preliminary studies on their photophysical properties. Unlike the parent rubicene and 3,10-(di-tert-butyl)rubicene, which adopt classical herringbone-type packing motifs in the solid state, the N-doped congener 7 b displayed columnar packing with an alternating co-facial arrangement of aromatic and heteroaromatic substructures.

Control of post-growth processes for the selection of metallo-tetraphenylporphyrin nanowires

Controlling self-organization of small organic molecules in nanostructures with a desired shape and size is one of the main challenges in organic nanoelectronics. Here, a strategy for selectively growing uniaxially aligned nanowires of meso-tetraphenyl porphyrin-Zn(ii) (ZnTPP) is presented. ZnTPP is deposited on an organic single crystal, namely potassium hydrogen phthalate, by organic molecular beam epitaxy. The films typically display a rather rich surface morphology, characterized by the presence of nanowires and other nm-sized aggregates, most of them unstable over time. Post-growth processes occurring via quasi-Ostwald ripening both in air and in vacuum demonstrate an aging protocol in vacuum as a tool for the selection of ZnTPP nanowires, whose morphology and uniaxial orientation are demonstrated to be led by organic epitaxy. The ability of growing ZnTPP nanowires with a unique crystal structure and precise orientation gives the chance to observe the intrinsic optical anisotropy of the triclinic polymorph of ZnTPP crystal and establishes the role of intermolecular interactions, providing new perspectives in the study of the intrinsic physical properties of ZnTPP crystals.

Pentacene Crystal Growth on Silica and Layer-Dependent Step-Edge Barrier from Atomistic Simulations

Understanding and controlling the growth of organic crystals deposited from the vapor phase is important for fundamental materials science and necessary for applications in pharmaceutical and organic electronics industries. Here, this process is studied for the paradigmatic case of pentacene on silica by means of a specifically tailored computational approach inspired by the experimental vapor deposition process. This scheme is able to reproduce the early stages of the thin-film formation, characterized by a quasi layer-by-layer growth, thus showcasing its potential as a tool complementary to experimental techniques for investigating organic crystals. Crystalline islands of standing molecules are formed at a critical coverage, as a result of a collective reorientation of disordered aggregates of flat-lying molecules. The growth then proceeds by sequential attachment of molecules at the cluster and then terrace edges. Free-energy calculations allowed us to characterize the step-edge barrier for descending the terraces, a fundamental parameter for growth models for which only indirect experimental measurements are available. The barrier is found to be layer-dependent (approximately 1 kcal/mol for the first monolayer on silica, 2 kcal/mol for the second monolayer) and to extend over a distance comparable with the molecular length.

Adsorption, desorption, and film formation of quinacridone and its thermal cracking product indigo on clean and carbon-covered silicon dioxide surfaces

The evaporation of quinacridone from a stainless steel Knudsen cell leads to the partial decomposition of this molecule in the cell, due to its comparably high sublimation temperature. At least one additional type of molecules, namely indigo, could be detected in the effusion flux. Thermal desorption spectroscopy and atomic force microscopy have been used to study the co-deposition of these molecules on sputter-cleaned and carbon-covered silicon dioxide surfaces. Desorption of indigo appears at temperatures of about 400 K, while quinacridone desorbs at around 510 K. For quinacridone, a desorption energy of 2.1 eV and a frequency factor for desorption of 1 × 10(19) s(-1) were calculated, which in this magnitude is typical for large organic molecules. A fraction of the adsorbed quinacridone molecules (∼5%) decomposes during heating, nearly independent of the adsorbed amount, resulting in a surface composed of small carbon islands. The sticking coefficients of indigo and quinacridone were found to be close to unity on a carbon covered SiO2 surface but significantly smaller on a sputter-cleaned substrate. The reason for the latter can be attributed to insufficient energy dissipation for unfavorably oriented impinging molecules. However, due to adsorption via a hot-precursor state, the sticking probability is increased on the surface covered with carbon islands, which act as accommodation centers.

Idiosyncrasies of Physical Vapor Deposition Processes from Various Knudsen Cells for Quinacridone Thin Film Growth on Silicon Dioxide

Thin films of quinacridone deposited by physical vapor deposition on silicon dioxide were investigated by thermal desorption spectroscopy (TDS), mass spectrometry (MS), atomic force microscopy (AFM), specular and grazing incidence X-ray diffraction (XRD, GIXD), and Raman spectroscopy. Using a stainless steel Knudsen cell did not allow the preparation of a pure quinacridone film. TDS and MS unambiguously showed that in addition to quinacridone, desorbing at about 500 K (γ-peak), significant amounts of indigo desorbed at about 420 K (β-peak). The existence of these two species on the surface was verified by XRD, GIXD, and Raman spectroscopy. The latter spectroscopies revealed that additional species are contained in the films, not detected by TDS. In the film mainly composed of indigo a species was identified which we tentatively attribute to carbazole. The film consisting of mainly quinacridone contained in addition p-sexiphenyl. The reason for the various decomposition species effusing from the metal Knudsen cell is the comparably high sublimation temperature of the hydrogen bonded quinacridone. With special experimental methods and by using glass Knudsen-type cells we were able to prepare films which exclusively consist of molecules either corresponding to the β-peak or the γ-peak. These findings are of relevance for choosing the proper deposition techniques in the preparation of quinacridone films in the context of organic electronic devices.

Initial stages of organic film growth characterized by thermal desorption spectroscopy

In the wake of the increasing importance of organic electronics, a more in-depth understanding of the early stages of organic film growth is indispensable. In this review a survey of several rod-like and plate-like organic molecules (p-quaterphenyl, p-sexiphenyl, hexaazatriphenylene-hexacarbonitrile (HATCN), rubicene, indigo) deposited on various application relevant substrates (gold, silver, mica, silicon dioxide) is given. The focus is particularly put on the application of thermal desorption spectroscopy to shed light on the kinetics and energetics of the molecule-substrate interaction. While each adsorption system reveals a manifold of features that are specific for the individual system, one can draw some general statements on the early stages of organic film formation from the available datasets. Among the important issues in this context is the formation of wetting layers and the dewetting as a function of the substrate surface conditions, organic film thickness and temperature.

Diindeno[1,2-g:1′,2′-s]rubicene: all-carbon non-fullerene electron acceptor for efficient bulk-heterojunction organic solar cells with high open-circuit voltage

An all carbon non-fullerene electron acceptor material based on diindeno[1,2-g:1′,2′-s]rubicene (DIR) was readily synthesized and processed for bulk-heterojunction organic solar cells.

Film growth, adsorption and desorption kinetics of indigo on SiO2

Organic dyes have recently been discovered as promising semiconducting materials, attributable to the formation of hydrogen bonds. In this work, the adsorption and desorption behavior, as well as thin film growth was studied in detail for indigo molecules on silicon dioxide with different substrate treatments. The material was evaporated onto the substrate by means of physical vapor deposition under ultra-high vacuum conditions and was subsequently studied by Thermal Desorption Spectroscopy (TDS), Auger Electron Spectroscopy, X-Ray Diffraction, and Atomic Force Microscopy. TDS revealed initially adsorbed molecules to be strongly bonded on a sputter cleaned surface. After further deposition a formation of dimers is suggested, which de-stabilizes the bonding mechanism to the substrate and leads to a weakly bonded adsorbate. The dimers are highly mobile on the surface until they get incorporated into energetically favourable three-dimensional islands in a dewetting process. The stronger bonding of molecules within those islands could be shown by a higher desorption temperature. On a carbon contaminated surface no strongly bonded molecules appeared initially, weakly bonded monomers rather rearrange into islands at a surface coverage that is equivalent to one third of a monolayer of flat-lying molecules. The sticking coefficient was found to be unity on both substrates. The desorption energies from carbon covered silicon dioxide calculated to 1.67 ± 0.05 eV for multilayer desorption from the islands and 0.84 ± 0.05 eV for monolayer desorption. Corresponding values for desorption from a sputter cleaned surface are 1.53 ± 0.05 eV for multilayer and 0.83 ± 0.05 eV for monolayer desorption.

Controlling the growth mode of para-sexiphenyl (6P) on ZnO by partial fluorination

Partial fluorination of para-sexiphenyl significantly alters the growth process on ZnO(101̄0) avoiding the phase coexistence of unsubstituted para-sexiphenyl and leading to smooth layer-by-layer growth.