Preparation and Photoelectrochemistry of Semiconducting WS2 Thin Films

Wide Band Gap Chalcogenide Semiconductors

Wide band gap semiconductors are essential for today's electronic devices and energy applications because of their high optical transparency, controllable carrier concentration, and tunable electrical conductivity. The most intensively investigated wide band gap semiconductors are transparent conductive oxides (TCOs), such as tin-doped indium oxide (ITO) and amorphous In-Ga-Zn-O (IGZO), used in displays and solar cells, carbides (e.g., SiC) and nitrides (e.g., GaN) used in power electronics, and emerging halides (e.g., γ-CuI) and 2D electronic materials (e.g., graphene) used in various optoelectronic devices. Compared to these prominent materials families, chalcogen-based (Ch = S, Se, Te) wide band gap semiconductors are less heavily investigated but stand out because of their propensity for p-type doping, high mobilities, high valence band positions (i.e., low ionization potentials), and broad applications in electronic devices such as CdTe solar cells. This manuscript provides a review of wide band gap chalcogenide semiconductors. First, we outline general materials design parameters of high performing transparent semiconductors, as well as the theoretical and experimental underpinnings of the corresponding research methods. We proceed to summarize progress in wide band gap (E_G > 2 eV) chalcogenide materials-namely, II-VI MCh binaries, CuMCh₂ chalcopyrites, Cu₃MCh₄ sulvanites, mixed-anion layered CuMCh(O,F), and 2D materials-and discuss computational predictions of potential new candidates in this family, highlighting their optical and electrical properties. We finally review applications-for example, photovoltaic and photoelectrochemical solar cells, transistors, and light emitting diodes-that employ wide band gap chalcogenides as either an active or passive layer. By examining, categorizing, and discussing prospective directions in wide band gap chalcogenides, this Review aims to inspire continued research on this emerging class of transparent semiconductors and thereby enable future innovations for optoelectronic devices.

Ultra-High Sensitive NO2 Gas Sensor Based on Tunable Polarity Transport in CVD-WS2/IGZO p-N Heterojunction

In this work, a thin-film transistor gas sensor based on the p-N heterojunction is fabricated by stacking chemical vapor deposition-grown tungsten disulfide (WS₂) with a sputtered indium-gallium-zinc-oxide (IGZO) film. To the best of our knowledge, the present device has the best NO₂ gas sensor response compared to all the gas sensors based on transition-metal dichalcogenide materials. The gas-sensing response is investigated under different NO₂ concentrations, adopting heterojunction device mode and transistor mode. High sensing response is obtained of p-N diode in the range of 1-300 ppm with values of 230% for 5 ppm and 18 170% for 300 ppm. On the transistor mode, the gas-sensing response can be modulated by the gate bias, and the transistor shows an ultrahigh response after exposure to NO₂, with sensitivity values of 6820% for 5 ppm and 499 400% for 300 ppm. Interestingly, the transistor has a typical ambipolar behavior under dry air, while the transistor becomes p-type as the amount of NO₂ increases. The assembly of these results demonstrates that the WS₂/IGZO device is a promising platform for the NO₂-gas detection, and its gas-modulated transistor properties show a potential application in tunable engineering for two-dimensional material heterojunction-based transistor device.

A WS2 nanosheet-based nanosensor for the ultrasensitive detection of small molecule–protein interaction via terminal protection of small molecule-linked DNA and Nt.BstNBI-assisted recycling amplification

A novel, ultrasensitive and specific fluorescent nanosensor for the detection of small molecule–protein interaction based on the terminal protection of small molecule-linked DNA and Nt.BstNBI-assisted recycling amplification was reported.

Establishing water-soluble layered WS₂ nanosheet as a platform for biosensing

Layered WS2 nanosheet is a kind of two-dimensional (2D) covalent-network solid material with remarkable structural and electronic properties that has attracted increasing interest in recent years. In this work, we propose a one-step sonication-assisted exfoliation method to prepare water-soluble WS2 nanosheet and demonstrate its application as a biosensing platform. The synthesis route is simple and straightforward. We reveal that single-strand DNA (ssDNA) chains can readily be adsorbed on the nanosheet, leading to complete and fast quenching of a fluorescent dye tagged to the DNA chain. The adsorbed ssDNA is detachable from the nanosheet upon the interaction with other biomolecules, resulting in the restoration of the fluorescence. The 2D WS2 nanosheet thus acts as an efficient platform for assembling of bioprobes. Because of the extraordinarily high quenching efficiency, which is the synergic result of both excited-state energy transfer and static quenching, the WS2 platform affords minimal background and high sensitivity. Our attempt will extend the application of this material to biosensing and probing areas.

Multi-walled carbon/IF-WS2 nanoparticles with improved thermal properties

A unique new class of core-shell structured composite nanoparticles, C-coated inorganic fullerene-like WS2 (IF-WS2) hollow nanoparticles, has been created for the first time in large quantities, by a continuous chemical vapour deposition method using a rotary furnace. Transmission electron microscopy and Raman characterisations of the resulting samples reveal that the composite nanoparticles exhibited a uniform shell of carbon coating, ranging from 2-5 nm on the IF-WS2 core, with little or no agglomeration. Importantly, thermogravimetric analysis and differential scanning calorimetry analysis confirm that their thermal stability against oxidation in air has been improved by about 70 °C, compared to the pristine IF-WS2, making these new C-coated IF-WS2 nanoparticles more attractive for critical engineering applications.

PLD Grown Polycrystalline Tungsten Disulphide (WS2) Films

Polycrystalline WS2 films were grown by pulsed laser deposition (PLD) system at relatively low temperature. The main objective of this study is to optimize the growth conditions for polycrystalline WS2 films at relatively low temperature to use them for photovoltaics (PVs). Different growth conditions and substrates are used and examined systematically. It is found out that films grown on strontium titanate SrTiO3 (STO) substrate have the best structural properties when compared to other substrates examined in this work. X-ray diffraction and optical characterizations of these films reveal crystallographic growth and very promising optical properties for PVs. Furthermore, it was observed that higher growth temperature (>300°C) has an unfavorable effect on the layers by creating some tungsten metallic droplets.