Dong H, Sun J, Ma S, Liang J, Xu B. Investigation of the growth temperature on indium diffusion in InGaAs/GaAsP multiple quantum wells and photoelectric properties.
RSC Adv 2015. [DOI:
10.1039/c5ra12905b]
[Citation(s) in RCA: 8] [Impact Index Per Article: 0.9] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022] Open
Abstract
InGaAs/GaAsP MQWs grown by metal–organic chemical vapor deposition at different growth temperatures generated an indium diffusion zone (InGaAsP) between InGaAs and GaAsP.
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