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Gong S, Yin Z, Zhang X, He X, Zhang W, Yang S, Song W. A novel naphthalene diimide-based conjugated polymer as an electron transport material for non-fullerene organic solar cells. NEW J CHEM 2022. [DOI: 10.1039/d2nj00895e] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 01/21/2023]
Abstract
The only aliphatic amino side chains at the N-position of naphthalene diimide endow novel electron transport materials with good film-forming and interface modification properties, which improves the device efficiency and stability.
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Affiliation(s)
- Shuai Gong
- Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo, 315201, China
- Nano Science and Technology Institute, University of Science and Technology of China, Suzhou, 215123, China
| | - Zhipeng Yin
- Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo, 315201, China
| | - Xinxin Zhang
- Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo, 315201, China
- College of Materials, Metallurgical and Chemistry, Jiangxi University of Science and Technology, Ganzhou, 341000, P. R. China
| | - Xiang He
- Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo, 315201, China
- Nano Science and Technology Institute, University of Science and Technology of China, Suzhou, 215123, China
| | - Wenjun Zhang
- Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo, 315201, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Shangfeng Yang
- Department of Materials Science and Engineering, University of Science and Technology of China, Hefei, 230026, China
| | - Weijie Song
- Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo, 315201, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China
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Diez Cabanes V, Van Dyck C, Osella S, Cornil D, Cornil J. Challenges for Incorporating Optical Switchability in Organic-Based Electronic Devices. ACS APPLIED MATERIALS & INTERFACES 2021; 13:27737-27748. [PMID: 34105343 DOI: 10.1021/acsami.1c05489] [Citation(s) in RCA: 6] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/12/2023]
Abstract
Transistors operate by controlling the current flowing from a source to a drain electrode via a third electrode (gate), thus giving access to a binary treatment (ON/OFF or 0/1) of the signal currently exploited in microelectronics. Introducing a second independent lever to modulate the current would allow for more complex logic functions amenable to a single electronic component and hence to new opportunities for advanced electrical signal processing. One avenue is to add this second dimension with light by incorporating photochromic molecules in current organic-based electronic devices. In this Spotlight, we describe different concepts that have been implemented in organic thin films and in molecular junctions as well as some pitfalls that have been highlighted thanks to theoretical modeling.
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Affiliation(s)
- Valentin Diez Cabanes
- Laboratoire de Physique et Chimie Théoriques, Université de Lorraine & CNRS, 54000 Nancy, France
| | - Colin Van Dyck
- Laboratory for Chemistry of Novel Materials, University of Mons, Place du Parc 20, 7000 Mons, Belgium
| | - Silvio Osella
- Chemical and Biological Systems Simulation Lab, Centre of New Technologies, University of Warsaw, Banacha 2c, 02-097 Warszawa, Poland
| | - David Cornil
- Laboratory for Chemistry of Novel Materials, University of Mons, Place du Parc 20, 7000 Mons, Belgium
| | - Jérôme Cornil
- Laboratory for Chemistry of Novel Materials, University of Mons, Place du Parc 20, 7000 Mons, Belgium
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Han Y, Maglione MS, Diez Cabanes V, Casado-Montenegro J, Yu X, Karuppannan SK, Zhang Z, Crivillers N, Mas-Torrent M, Rovira C, Cornil J, Veciana J, Nijhuis CA. Reversal of the Direction of Rectification Induced by Fermi Level Pinning at Molecule-Electrode Interfaces in Redox-Active Tunneling Junctions. ACS APPLIED MATERIALS & INTERFACES 2020; 12:55044-55055. [PMID: 33237732 DOI: 10.1021/acsami.0c15435] [Citation(s) in RCA: 6] [Impact Index Per Article: 1.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/24/2023]
Abstract
Control over the energy level alignment in molecular junctions is notoriously difficult, making it challenging to control basic electronic functions such as the direction of rectification. Therefore, alternative approaches to control electronic functions in molecular junctions are needed. This paper describes switching of the direction of rectification by changing the bottom electrode material M = Ag, Au, or Pt in M-S(CH2)11S-BTTF//EGaIn junctions based on self-assembled monolayers incorporating benzotetrathiafulvalene (BTTF) with EGaIn (eutectic alloy of Ga and In) as the top electrode. The stability of the junctions is determined by the choice of the bottom electrode, which, in turn, determines the maximum applied bias window, and the mechanism of rectification is dominated by the energy levels centered on the BTTF units. The energy level alignments of the three junctions are similar because of Fermi level pinning induced by charge transfer at the metal-thiolate interface and by a varying degree of additional charge transfer between BTTF and the metal. Density functional theory calculations show that the amount of electron transfer from M to the lowest unoccupied molecular orbital (LUMO) of BTTF follows the order Ag > Au > Pt. Junctions with Ag electrodes are the least stable and can only withstand an applied bias of ±1.0 V. As a result, no molecular orbitals can fall in the applied bias window, and the junctions do not rectify. The junction stability increases for M = Au, and the highest occupied molecular orbital (HOMO) dominates charge transport at a positive bias resulting in a positive rectification ratio of 83 at ±1.5 V. The junctions are very stable for M = Pt, but now the LUMO dominates charge transport at a negative bias resulting in a negative rectification ratio of 912 at ±2.5 V. Thus, the limitations of Fermi level pinning can be bypassed by a judicious choice of the bottom electrode material, making it possible to access selectively HOMO- or LUMO-based charge transport and, as shown here, associated reversal of rectification.
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Affiliation(s)
- Yingmei Han
- Department of Chemistry, National University of Singapore, 3 Science Drive 3, Singapore 117543, Singapore
| | - Maria Serena Maglione
- Institut de Ciéncia de Materials de Barcelona (ICMAB-CSIC)/CIBER-BBN, Campus de la UAB, Bellaterra 08193, Spain
| | - Valentin Diez Cabanes
- Laboratory for Chemistry of Novel Materials, University of Mons, Place du Parc 20, Mons 7000, Belgium
| | - Javier Casado-Montenegro
- Institut de Ciéncia de Materials de Barcelona (ICMAB-CSIC)/CIBER-BBN, Campus de la UAB, Bellaterra 08193, Spain
| | - Xiaojiang Yu
- Singapore Synchrotron Light Source, National University of Singapore, 5 Research Link, Singapore 117603, Singapore
| | - Senthil Kumar Karuppannan
- Department of Chemistry, National University of Singapore, 3 Science Drive 3, Singapore 117543, Singapore
| | - Ziyu Zhang
- Department of Chemistry, National University of Singapore, 3 Science Drive 3, Singapore 117543, Singapore
| | - Núria Crivillers
- Institut de Ciéncia de Materials de Barcelona (ICMAB-CSIC)/CIBER-BBN, Campus de la UAB, Bellaterra 08193, Spain
| | - Marta Mas-Torrent
- Institut de Ciéncia de Materials de Barcelona (ICMAB-CSIC)/CIBER-BBN, Campus de la UAB, Bellaterra 08193, Spain
| | - Concepció Rovira
- Institut de Ciéncia de Materials de Barcelona (ICMAB-CSIC)/CIBER-BBN, Campus de la UAB, Bellaterra 08193, Spain
| | - Jérôme Cornil
- Laboratory for Chemistry of Novel Materials, University of Mons, Place du Parc 20, Mons 7000, Belgium
| | - Jaume Veciana
- Institut de Ciéncia de Materials de Barcelona (ICMAB-CSIC)/CIBER-BBN, Campus de la UAB, Bellaterra 08193, Spain
| | - Christian A Nijhuis
- Department of Chemistry, National University of Singapore, 3 Science Drive 3, Singapore 117543, Singapore
- Centre for Advanced 2D Materials and Graphene Research Center, National University of Singapore, 6 Science Drive 2, Singapore 117546, Singapore
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Yitzchaik S, Gutierrez R, Cuniberti G, Yerushalmi R. Diversification of Device Platforms by Molecular Layers: Hybrid Sensing Platforms, Monolayer Doping, and Modeling. LANGMUIR : THE ACS JOURNAL OF SURFACES AND COLLOIDS 2018; 34:14103-14123. [PMID: 30253096 DOI: 10.1021/acs.langmuir.8b02369] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/08/2023]
Abstract
Inorganic materials such as semiconductors, oxides, and metals are ubiquitous in a wide range of device technologies owing to the outstanding robustness and mature processing technologies available for such materials. However, while the important contribution of inorganic materials to the advancement of device technologies has been well established for decades, organic-inorganic hybrid device systems, which merge molecular functionalities with inorganic platforms, represent a newer domain that is rapidly evolving at an increasing pace. Such devices benefit from the great versatility and flexibility of the organic building blocks merged with the robustness of the inorganic platforms. Given the overwhelming wealth of literature covering various approaches for modifying and using inorganic devices, this feature article selectively highlights some of the advances made in the context of the diversification of devices by surface chemistry. Particular attention is given to oxide-semiconductor systems and metallic surfaces modified with organic monolayers. The inorganic device components, such as semiconductors, metals, and oxides, are modified by organic monolayers, which may serve as either active, static, or sacrificial components. We portray research directions within the broader field of organic-inorganic hybrid device systems that can be viewed as specific examples of the potential of such hybrid device systems given their comprehensive capabilities of design and diversification. Monolayer doping techniques where sacrificial organic monolayers are introduced into semiconducting elements are reviewed as a specific case, together with associated requirements for nanosystems, devices, and sensors for controlling doping levels and doping profiles on the nanometric scale. Another series of examples of the flexibility provided by the marriage of organic functional monolayers and inorganic device components are represented by a new class of biosensors, where the organic layer functionality is exploited in a functioning device for sensing. Considerations for relying on oxide-terminated semiconductors rather than the pristine semiconductor material as a platform both for processing and sensing are discussed. Finally, we cover aspects related to the use of various theoretical and computational approaches to model organic-inorganic systems. The main objectives of the topics covered here are (i) to present the advances made in each respective domain and (ii) to provide a comprehensive view of the potential uses of organic monolayers and self-assembly processes in the rapidly evolving field of molecular-inorganic hybrid device platforms and processing methodologies. The directions highlighted here provide a perspective on a future, not yet fully realized, integrated approach where organic monolayers are combined with inorganic platforms in order to obtain versatile, robust, and flexible systems with enhanced capabilities.
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Affiliation(s)
- Shlomo Yitzchaik
- Institute of Chemistry and the Center for Nanoscience and Nanotechnology , The Hebrew University of Jerusalem , Edmond J. Safra Campus , Givat Ram Jerusalem , 91904 Israel
| | | | | | - Roie Yerushalmi
- Institute of Chemistry and the Center for Nanoscience and Nanotechnology , The Hebrew University of Jerusalem , Edmond J. Safra Campus , Givat Ram Jerusalem , 91904 Israel
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High-response and low-temperature nitrogen dioxide gas sensor based on gold-loaded mesoporous indium trioxide. J Colloid Interface Sci 2018; 524:368-378. [DOI: 10.1016/j.jcis.2018.04.033] [Citation(s) in RCA: 27] [Impact Index Per Article: 4.5] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 02/01/2018] [Revised: 04/08/2018] [Accepted: 04/09/2018] [Indexed: 11/30/2022]
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Marzec MM, Awsiuk K, Daąbczyński P, Rysz J, Budkowski A, Bernasik A. Influence of Acrylic Polymers Stereoregularity on Interface Interactions in Model Thin Film Systems. MACROMOL CHEM PHYS 2018. [DOI: 10.1002/macp.201800097] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/08/2022]
Affiliation(s)
- Mateusz M. Marzec
- Academic Centre for Materials and Nanotechnology; AGH University of Science and Technology; al. Mickiewicza 30 30-059 Krakow Poland
| | - Kamil Awsiuk
- Smoluchowski Institute of Physics; Jagiellonian University; ul. Łojasiewicza 11 30-348 Kraków Poland
| | - Paweł Daąbczyński
- Smoluchowski Institute of Physics; Jagiellonian University; ul. Łojasiewicza 11 30-348 Kraków Poland
| | - Jakub Rysz
- Smoluchowski Institute of Physics; Jagiellonian University; ul. Łojasiewicza 11 30-348 Kraków Poland
| | - Andrzej Budkowski
- Smoluchowski Institute of Physics; Jagiellonian University; ul. Łojasiewicza 11 30-348 Kraków Poland
| | - Andrzej Bernasik
- Academic Centre for Materials and Nanotechnology; AGH University of Science and Technology; al. Mickiewicza 30 30-059 Krakow Poland
- Faculty of Physics and Applied Computer Science; AGH University of Science and Technology; al. Mickiewicza 30 30-059 Kraków Poland
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Smith CE, Xie Z, Bâldea I, Frisbie CD. Work function and temperature dependence of electron tunneling through an N-type perylene diimide molecular junction with isocyanide surface linkers. NANOSCALE 2018; 10:964-975. [PMID: 29192925 DOI: 10.1039/c7nr06461f] [Citation(s) in RCA: 30] [Impact Index Per Article: 5.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/07/2023]
Abstract
Conducting probe atomic force microscopy (CP-AFM) was employed to examine electron tunneling in self-assembled monolayer (SAM) junctions. A 2.3 nm long perylene tetracarboxylic acid diimide (PDI) acceptor molecule equipped with isocyanide linker groups was synthesized, adsorbed onto Ag, Au and Pt substrates, and the current-voltage (I-V) properties were measured by CP-AFM. The dependence of the low-bias resistance (R) on contact work function indicates that transport is LUMO-assisted ('n-type behavior'). A single-level tunneling model combined with transition voltage spectroscopy (TVS) was employed to analyze the experimental I-V curves and to extract the effective LUMO position εl = ELUMO - EF and the effective electronic coupling (Γ) between the PDI redox core and the contacts. This analysis revealed a strong Fermi level (EF) pinning effect in all the junctions, likely due to interface dipoles that significantly increased with increasing contact work function, as revealed by scanning Kelvin probe microscopy (SKPM). Furthermore, the temperature (T) dependence of R was found to be substantial. For Pt/Pt junctions, R varied more than two orders of magnitude in the range 248 K < T < 338 K. Importantly, the R(T) data are consistent with a single step electron tunneling mechanism and allow independent determination of εl, giving values compatible with estimates of εl based on analysis of the full I-V data. Theoretical analysis revealed a general criterion to unambiguously rule out a two-step transport mechanism: namely, if measured resistance data exhibit a pronounced Arrhenius-type temperature dependence, a two-step electron transfer scenario should be excluded in cases where the activation energy depends on contact metallurgy. Overall, our results indicate (1) the generality of the Fermi level pinning phenomenon in molecular junctions, (2) the utility of employing the single level tunneling model for determining essential electronic structure parameters (εl and Γ), and (3) the importance of changing the nature of the contacts to verify transport mechanisms.
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Affiliation(s)
- Christopher E Smith
- Department of Chemistry, University of Minnesota, Minneapolis, Minnesota 55455, USA
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Carlotti M, Kovalchuk A, Wächter T, Qiu X, Zharnikov M, Chiechi RC. Conformation-driven quantum interference effects mediated by through-space conjugation in self-assembled monolayers. Nat Commun 2016; 7:13904. [PMID: 27996036 PMCID: PMC5187444 DOI: 10.1038/ncomms13904] [Citation(s) in RCA: 55] [Impact Index Per Article: 6.9] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 07/18/2016] [Accepted: 11/10/2016] [Indexed: 11/09/2022] Open
Abstract
Tunnelling currents through tunnelling junctions comprising molecules with cross-conjugation are markedly lower than for their linearly conjugated analogues. This effect has been shown experimentally and theoretically to arise from destructive quantum interference, which is understood to be an intrinsic, electronic property of molecules. Here we show experimental evidence of conformation-driven interference effects by examining through-space conjugation in which π-conjugated fragments are arranged face-on or edge-on in sufficiently close proximity to interact through space. Observing these effects in the latter requires trapping molecules in a non-equilibrium conformation closely resembling the X-ray crystal structure, which we accomplish using self-assembled monolayers to construct bottom-up, large-area tunnelling junctions. In contrast, interference effects are completely absent in zero-bias simulations on the equilibrium, gas-phase conformation, establishing through-space conjugation as both of fundamental interest and as a potential tool for tuning tunnelling charge-transport in large-area, solid-state molecular-electronic devices.
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Affiliation(s)
- Marco Carlotti
- Stratingh Institute for Chemistry &Zernike Institute for Advanced Materials, University of Groningen, Nijenborgh 4, Groningen 9747 AG, The Netherlands
| | - Andrii Kovalchuk
- Stratingh Institute for Chemistry &Zernike Institute for Advanced Materials, University of Groningen, Nijenborgh 4, Groningen 9747 AG, The Netherlands
| | - Tobias Wächter
- Applied Physical Chemistry, Heidelberg University, Im Neuenheimer Feld 253, Heidelberg 69120, Germany
| | - Xinkai Qiu
- Stratingh Institute for Chemistry &Zernike Institute for Advanced Materials, University of Groningen, Nijenborgh 4, Groningen 9747 AG, The Netherlands
| | - Michael Zharnikov
- Applied Physical Chemistry, Heidelberg University, Im Neuenheimer Feld 253, Heidelberg 69120, Germany
| | - Ryan C Chiechi
- Stratingh Institute for Chemistry &Zernike Institute for Advanced Materials, University of Groningen, Nijenborgh 4, Groningen 9747 AG, The Netherlands
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