CdSeS Nanowires: Compositionally Controlled Band Gap and Exciton Dynamics

Anion-Driven Bandgap Tuning of AgIn(SxSe1-x)2 Quantum Dots

Accurate tuning of the electronic and photophysical properties of quantum dots is required to maximize the light conversion efficiencies in semiconductor-assisted processes. Herein, we report a facile synthetic procedure for AgIn(SxSe1-x)2 quantum dots with S content (x) ranging from 1 to 0. This simple approach allowed us to tune the bandgap (2.6-1.9 eV) and extend the absorption of AgIn(SxSe1-x)2 quantum dots to lower photon energies (near-IR) while maintaining a small QD size (∼5 nm). Ultraviolet spectroscopy studies revealed that the change in the bandgap is modulated by the electronic shifts in both the valence band and the conduction band positions. The negative overall charge of the as-synthesized quantum dots enabled us to make films of quantum dots on mesoscopic TiO2. Excited state studies of the AgIn(SxSe1-x)2 quantum dot films demonstrated a fast charge injection to TiO2, and the electron transfer rate constant was found to be 1.5-3.5 × 1011 s-1. The results of this work present AgIn(SxSe1-x)2 quantum dots synthesized by the one-step method as a potential candidate for designing light-harvesting assemblies.

General synthesis of mixed-dimensional van der Waals heterostructures with hexagonal symmetry

The combination of two-dimensional (2D) materials with non-2D materials (quantum dots, nanowires and bulk materials), i.e. mixed-dimensional van der Waals (md-vdW) heterostructures endow 2D materials with remarkable electronics properties. However, it remains a big challenge to synthesize md-vdW heterostructures because of the difference of crystal symmetry between 2D and non-2D materials. Meanwhile, it is difficult to initiate the nucleation due to the lack of chemical active sites on chemical inert surfaces of 2D materials. Herein, we design a general chemical vapor deposition method for synthesizing a broad class of md-vdW heterostructures with well-aligned hexagonal symmetry including MoS₂/FeS, MoS₂/CoS, MoS₂/MnS, MoS₂/ZnS, Mo(S_xSe_1-x)₂/ZnS_xSe_1-x, Mo(S_xSe_1-x)₂/CdS_xSe_1-x. Combining with DFT calculation, we find that the hexagonal symmetry and the centered clusters of MoS₂and Mo(S_xSe_1-x)₂nanoflakes are two crucial factors to launch the hexagonally oriented growth and nucleation of non-2D materials on 2D materials. Our discovery opens an opportunity for the versatile hetero-integration of 2D materials and allows systematic investigation of physical properties in a wide variety of md-vdW heterostructures.

Self-Assembly of Biocompatible FeSe Hollow Nanostructures and 2D CuFeSe Nanosheets with One- and Two-Photon Luminescence Properties

Transition metal chalcogenides are investigated for catalyst, intermediary agency, and particular optical properties because of their distinguished electron-vacancy-transfer (EVT) process toward different applications. In this work, one convenient approach for making pure-phased FeSe nanocrystals (NCs) and doped CuFeSe nanosheets (NSs) through a wet chemistry method in mixed solvents is illustrated. The surface modification of each product is realized by using a peptide molecule glutathione (GSH), in which the thiol group (-SH) is ascribed to be the in situ reducer and bonding agency between the crystalline surface and surfactant in whole constructing processes. Due to the functional groups in biological GSH, highly aggregated NCs are rebuilt in the form of an FeSe hollow structure through amino and carboxyl cross-linking functions through a spontaneous assembly procedure. Owing to the coupling procedure of Cu and Fe in the growth process, it generates enhanced EVT. Additionally, it shows the emission spectra of λ_EM-PL = 436 nm (FeSe) and 452 nm (CuFeSe) while λ_EX-PL = 356 nm, it also conveys two-photon phenomenon while λ_EX-PL = 720 nm. Moreover, it also shows strong off-resonant luminescence due to two-photon absorption, which should be valuable for biological applications.

Controllable Vapor Growth of Large-Area Aligned CdS x Se1-x Nanowires for Visible Range Integratable Photodetectors

The controllable growth of large area band gap engineered-semiconductor nanowires (NWs) with precise orientation and position is of immense significance in the development of integrated optoelectronic devices. In this study, we have achieved large area in-plane-aligned CdS _x Se_1-x nanowires via chemical vapor deposition method. The orientation and position of the alloyed CdS _x Se_1-x NWs could be controlled well by the graphoepitaxial effect and the patterns of Au catalyst. Microstructure characterizations of these as-grown samples reveal that the aligned CdS _x Se_1-x NWs possess smooth surface and uniform diameter. The aligned CdS _x Se_1-x NWs have strong photoluminescence and high-quality optical waveguide emission covering almost the entire visible wavelength range. Furthermore, photodetectors were constructed based on individual alloyed CdS _x Se_1-x NWs. These devices exhibit high performance and fast response speed with photoresponsivity ~ 670 A W^-1 and photoresponse time ~ 76 ms. Present work provides a straightforward way to realize in-plane aligned bandgap engineering in semiconductor NWs for the development of large area NW arrays, which exhibit promising applications in future optoelectronic integrated circuits.

Ultrafast spectroscopic studies of composition-dependent near-infrared-emitting alloyed CdSeTe quantum dots

In this study, ultrafast optical properties of composition-dependent near infrared-emitting alloyed CdSeTe quantum dots are measured and analyzed.

Optoelectronic Properties of Semiconductor Quantum Dot Solids for Photovoltaic Applications

Quantum dot (QD) solids represent a new type of condensed matter drawing high fundamental and applied interest. Quantum confinement in individual QDs, combined with macroscopic scale whole materials, leads to novel exciton and charge transfer features that are particularly relevant to optoelectronic applications. This Perspective discusses the structure of semiconductor QD solids, optical and spectral properties, charge carrier transport, and photovoltaic applications. The distance between adjacent nanoparticles and surface ligands influences greatly electrostatic interactions between QDs and, hence, charge and energy transfer. It is almost inevitable that QD solids exhibit energetic disorder that bears many similarities to disordered organic semiconductors, with charge and exciton transport described by the multiple trapping model. QD solids are synthesized at low cost from colloidal solutions by casting, spraying, and printing. A judicious selection of a layer sequence involving QDs with different size, composition, and ligands can be used to harvest sunlight over a wide spectral range, leading to inexpensive and efficient photovoltaic devices.

Unusually Slow Electron Cooling to Charge-Transfer State in Gradient CdTeSe Alloy Nanocrystals Mediated through Mn Atom

We have synthesized Mn-doped CdTeSe gradient alloy nanocrystals (NCs) by a colloidal synthetic method, and charge carrier dynamics have been revealed through ultrafast transient absorption (TA) spectroscopy. Due to the reactivity difference between Te and Se, a CdTe-rich core and CdSe-rich shell have been formed in the CdTeSe alloy with the formation of a gradient type II core-shell structure. Electron paramagnetic resonance studies suggest Mn atoms are located in the surface of the alloy NCs. Steady-state optical absorption and emission studies suggest formation of a charge-transfer (CT) state in which electrons are localized in a CdSe-rich shell and holes are localized in a CdTe-rich core which appears in the red region of the spectra. Electron transfer in the CT state is found to take place in the Marcus inverted region. To understand charge-transfer dynamics in the CdTeSe alloy NCs and to determine the effect of Mn doping on the alloy, ultrafast transient absorption studies have been carried out. In the case of the undoped alloy, formation of the CT state is found to take place through electron relaxation to the conduction band of the CT state with a time of 600 fs and through hole relaxation (from the CdSe-rich state to the CdTe-rich state) to the valence band of the CT state with a time scale of 1 ps. However, electron relaxation in the presence of Mn dopants takes place initially via an electron transfer to the Mn 3d state (d(5)) followed by transfer from the Mn 3d state (d(6)) to the CT state, which has been found to take place with a >700 ps time scale in addition to the hole relaxation time of 2 ps. Charge recombination time of the CT state is found to be extremely slow in the Mn-doped CdTeSe alloy NCs as compared to the undoped one, where the Mn atom acts as an electron storage center.

The excitonic photoluminescence mechanism and lasing action in band-gap-tunable CdS(1-x)Se(x) nanostructures

Bandgap tunable semiconductor materials have wide application in integrated-optoelectronic and communication devices. The CdS1-xSex ternary semiconductor materials covering green-red bands have been reported previously, but their basic band-gap and optical properties crucial to the performance of the CdS1-xSex-based optoelectronic devices have not been deeply understood. In this paper, we theoretically simulated and discussed the feasibility of bandgap-tunable CdS1-xSex nanomaterials for designing wavelength tunable microlasers. Then we fabricated the CdS1-xSex nanobelts with their band gap ranging from 2.4 to 1.74 eV by adjusting the composition ratio x in the vapor-phase-transport growth process. The temperature-dependent photoluminescence and exciton-related optical constants of the CdS1-xSex nanobelts were carefully demonstrated. Finally, the wavelength-tunable Fabry-Perot lasing in CdS1-xSex nanobelts was obtained, and the Fabry-Perot lasing mechanism was numerically simulated by the FDTD method. The systematic results on the mechanism of the tunable band gap, exciton properties and lasing of the CdS1-xSex nanostructure help us deeply understand the intrinsic optical properties of this material, and will build a strong foundation for future application of green-red wavelength-tunable CdS1-xSex microlasers.

Diffusion-Induced Shape Evolution in Multinary Semiconductor Nanostructures

The classical mechanism of crystal growth for architecting different nanomaterials in solution, although widely studied, is mainly restricted to binary semiconductor systems. However, this method is not applicable to multinary nanomaterials, which have multivalent cations possessing different reactivity under identical reaction conditions. Hence, the shape architectures of these nanostructures, which require a more sophisticated approach, remain relatively unexplored compared to those of binary semiconductors. Owing to the importance of the multinary materials, which are emerging as excellent green materials for both light harvesting and light emission, we investigated the diffusion-rate-controlled formation of ternary AgGaSe2 nanostructures and studied their heterostructures with noble metals. Controlling the changes in the rate of diffusion of the Ag ions resulted in the formation of tadpole-shaped AgGaSe2 ternary nanostructures. In situ study by collecting a sequential collection of samples has been carried out, and the conversion of amorphous Ga-selenide to crystalline AgGaSe2 has been monitored. In addition, heterostructures of tadpole AgGaSe2 with noble metals, Au and Pt, were designed, and their photocatalytic behaviors were studied.

Tuning the surface properties of alloyed CdSxSe1−x 2D nanosheets

Surface engineering and tuning of the optoelectronic properties of wurtzite CdS_xSe_1−x nanosheets by ligand exchange.

Photovoltaic properties of multilayered quantum dot/quantum rod-sensitized TiO2 solar cells fabricated by SILAR and electrophoresis

A multilayered semiconductor sensitizer structure composed of three differently sized CdSe quantum rods and CdS quantum dots.