Surface reactions of 1-propanethiol on GaAs(100)

Inorganic Nanoshell-Stabilized Liquid Metal for Targeted Photonanomedicine in NIR-II Biowindow

Gallium and gallium-based alloys, typical types of liquid metals with unique physiochemical properties, are emerging as a next generation of functional materials in versatile biomedical applications. However, the exploration of their biomedical performance is currently insufficient, and their intrinsic low oxidative resistance is a key factor blocking their further clinical translation. Herein, we report on the surface engineering of liquid metal-based nanoplatforms by an inorganic silica nanoshell based on a novel but facile sonochemical synthesis for highly efficient, targeted, and near-infrared (NIR)-triggered photothermal tumor hyperthermia in the NIR-II biowindow. The inorganic silica-shell engineering of liquid metal significantly enhances the photothermal performance of the liquid metal core as reflected by enhanced NIR absorption, improved photothermal stability by oxidation protection, and abundant surface chemistry for surface-targeted engineering to achieve enhanced tumor accumulation. Systematic in vitro cell-level evaluation and in vivo tumor xenograft assessment demonstrate that (Arg-Gly-Asp) RGD-targeted and silica-coated nanoscale liquid metal substantially induces phototriggered cancer-cell death and photothermal tumor eradication, accompanied by high in vivo biocompatibility and easy excretion out of the body. This work provides the first paradigm for surface-inorganic engineering of liquid metal-based nanoplatforms for achieving multiple desirable therapeutic performances, especially for combating cancer.

Control of Gallium Oxide Growth on Liquid Metal Eutectic Gallium/Indium Nanoparticles via Thiolation

Eutectic gallium-indium alloy (EGaIn, a room-temperature liquid metal) nanoparticles are of interest for their unique potential uses in self-healing and flexible electronic devices. One reason for their interest is due to a passivating oxide skin that develops spontaneously on exposure to ambient atmosphere which resists deformation and rupture of the resultant liquid particles. It is then of interest to develop methods for control of this oxide growth process. It is hypothesized here that functionalization of EGaIn nanoparticles with thiolated molecules could moderate oxide growth based on insights from the Cabrera-Mott oxidation model. To test this, the oxidation dynamics of several thiolated nanoparticle systems were tracked over time with X-ray photoelectron spectroscopy. These results demonstrate the ability to suppress gallium oxide growth by up to 30%. The oxide progressively matures over a 28 day period, terminating in different final thicknesses as a function of thiol selection. These results indicate not only that thiols moderate gallium oxide growth via competition with oxygen for surface sites but also that different thiols alter the thermodynamics of oxide growth through modification of the EGaIn work function.

Liquid-Phase Monolayer Doping of InGaAs with Si-, S-, and Sn-Containing Organic Molecular Layers

The functionalization and subsequent monolayer doping of InGaAs substrates using a tin-containing molecule and a compound containing both silicon and sulfur was investigated. Epitaxial InGaAs layers were grown on semi-insulating InP wafers and functionalized with both sulfur and silicon using mercaptopropyltriethoxysilane and with tin using allyltributylstannane. The functionalized surfaces were characterized using X-ray photoelectron spectroscopy (XPS). The surfaces were capped and subjected to rapid thermal annealing to cause in-diffusion of dopant atoms. Dopant diffusion was monitored using secondary ion mass spectrometry. Raman scattering was utilized to nondestructively determine the presence of dopant atoms, prior to destructive analysis, by comparison to a blank undoped sample. Additionally, due to the As-dominant surface chemistry, the resistance of the functionalized surfaces to oxidation in ambient conditions over periods of 24 h and 1 week was elucidated using XPS by monitoring the As 3d core level for the presence of oxide components.

Plasmachemical Double Click Thiol-ene Reactions for Wet Electrical Barrier

Click thiol-ene chemistry is demonstrated for the reaction of thiol containing molecules with surface alkene bonds during electrical discharge activation. This plasmachemical reaction mechanism is shown to be 2-fold for allyl mercaptan (an alkene and thiol group containing precursor), comprising self-cross-linked nanolayer deposition in tandem with interfacial cross-linking to the surface alkene bonds of a polyisoprene base layer. A synergistic multilayer structure is attained which displays high wet electrical barrier performance during immersion in water.

Structure of thiol self-assembled monolayers commensurate with the GaAs (001) surface

Observed properties of thiol self-assembled monolayers (SAMs) on GaAs (001) surfaces can be explained by the presence of surface reconstructions, but their exact form is generally unknown. We propose a new approach to modeling the SAM-surface interface based on using alkanethiol dense packing structures as a starting point and adjusting the surface reconstruction to accommodate them. Obtained in such a way, model SAMs adsorb along the trenches in the [110] direction and exhibit a 19 degrees tilt and +/- 45 degrees twist angles, in agreement with available experimental data. The molecules of the SAM bind to both Ga and As, and cover only 50% of the available surface sites. The requirements for the SAM formation process to achieve the proposed structures are discussed.

UV photooxidation and photopatterning of alkanethiolate self-assembled monolayers (SAMs) on GaAs (001)

We have investigated the photooxidation of alkanethiolate self-assembled monoalyers (SAMs) adsorbed on GaAs (001) using time-of-flight secondary ion mass spectrometry. Both -CH3- and -COOH-terminated SAMs undergo photoreaction to form sulfonated species upon exposure to UV light from a 500 W Hg arc lamp (lambda = 280-440 nm) in the presence of oxygen. In contrast to SAMs adsorbed on metals, the photooxidation of octadecanethiol adsorbed on GaAs can be fit to two first-order reactions: a fast initial reaction followed by a second slower reaction ( approximately 6 times slower). For SAMs with shorter alkyl chain lengths, the photooxidation process is can be fit to a single first-order reaction. Using the optimal photooxidation time, we also demonstrate that SAMs can be successfully UV photopatterned on GaAs substrates producing sharp, well-defined patterns.

Gas Phase Formation of Dense Alkanethiol Layers on GaAs(110)

We present a study of the growth and thermal stability of hexanethiol (C6) films on GaAs(110) by direct recoil spectroscopy with time-of-flight analysis. We compare our results with the better known case of C6 adsorption on Au(111). In contrast to the two-step adsorption kinetics observed for Au surfaces after lengthy exposures, data for C6 adsorption on the GaAs(110) surface are consistent with the formation of a single dense phase of C6 molecules at lower exposures. On the contrary, in solution preparation, dense phases can only be obtained on GaAs for long alkanethiols and after lengthy immersions. The C6 layer has a first desorption peak at 325 K, where partial desorption of the alkanethiol molecules takes place. Fits to the desorption curves result in a 1 eV adsorption energy, in agreement with a chemisorption process. Increasing the temperature to 500 K results in the S-C bond scission with only S remaining on the GaAs(110) surface. The possibility of forming dense, short-alkanethiol layers on semiconductor surfaces from the vapor phase could have a strong impact for a wide range of self-assembled monolayer applications, with only minimal care not to surpass room temperature once the layer has been formed in order to avoid molecular desorption.

Coupling vs surface-etching reactions of alkyl halides on GaAs(100). 2. CH2I2 reactions

Surface reactions of CH2I2 on gallium-rich GaAs(100)-(4 x 1), studied by temperature programmed desorption and X-ray photoelectron spectroscopy (XPS), show CH2I2 adsorbs dissociatively at liquid nitrogen temperatures to form surface chemisorbed CH2(ads) and I(ads) species. Controlled hydrogenation of a fraction of the CH2(ads) species in the chemisorbed layer by the background hydrogen radicals results in a surface layer comprising both CH3(ads) and CH2(ads) species. This hydrogenation step initiates a plethora of further surface reactions involving these two species and I(ads). Thermal activation leads to three sequential methylene insertions (CH2(ads)) into the CH3-surface bond to form three higher alkyl (ethyl (C2), propyl (C3), and butyl (C4)) species, which undergo beta-hydride elimination to evolve the respective higher alkene (ethene, propene, and butene). In competition with beta-hydride elimination, reductive elimination of the ethyl and propyl species with I(ads) occurs to liberate the respective alkyl iodide. Beta-hydride elimination in the alkyls, in the temperature range 420-520 K, is the more dominant pathway, and it is also the rate-limiting step for further chain propagation. The evolution of the alkyl iodides represents the only pathway for the removal of surface iodines in this study and is different from previous investigations where gallium and arsenic iodide etch products (GaI(x), AsI(x) (x = 1-3)) formed instead. The desorption of methane and methyl iodide, formed from surface CH3(ads) species at high temperatures by the reaction between surface methylenes and hydrogens eliminated from the surface C2-C4 alkyls, terminates the chain propagation. We discuss the reaction mechanisms by which the observed reaction products form and postulate reasons for the reaction pathways adopted by the surface species.

Molecular Self-Assembly at Bare Semiconductor Surfaces: Preparation and Characterization of Highly Organized Octadecanethiolate Monolayers on GaAs(001)

Through rigorous control of preparation conditions, organized monolayers with a highly reproducible structure can be formed by solution self-assembly of octadecanethiol on GaAs (001) at ambient temperature. A combination of characterization probes reveal a structure with conformationally ordered alkyl chains tilted on average at 14 +/- 1 degrees from the surface normal with a 43 +/- 5 degrees twist, a highly oleophobic and hydrophobic ambient surface, and direct S-GaAs attachment. Analysis of the tilt angle and film thickness data shows a significant mismatch of the average adsorbate molecule spacings with the spacings of an intrinsic GaAs(001) surface lattice. The monolayers are stable up to approximately 100 degrees C and exhibit an overall thermal stability which is lower than that of the same monolayers on Au[111] surfaces. A two-step solution assembly process is observed: rapid adsorption of molecules over the first several hours to form disordered structures with molecules lying close to the substrate surface, followed by a slow densification and asymptotic approach to final ordering. This process, while similar to the assembly of alkanethiols on Au[111], is nearly 2 orders of magnitude slower. Finally, despite differences in assembly rates and the thermal stability, exchange experiments with isotopically tagged molecules show that the octadecanethiol on GaAs(001) monolayers undergo exchange with solute thiol molecules at roughly the same rate as the corresponding exchanges of the same monolayers on Au[111].