Redox-driven conductance switching via filament formation and dissolution in carbon/molecule/TiO2/Ag molecular electronic junctions

Carbon-Based Molecular Junctions for Practical Molecular Electronics

The field of molecular electronics has grown rapidly since its experimental realization in the late 1990s, with thousands of publications on how molecules can act as circuit components and the possibility of extending microelectronic miniaturization. Our research group developed molecular junctions (MJs) using conducting carbon electrodes and covalent bonding, which provide excellent temperature tolerance and operational lifetimes. A carbon-based MJ based on quantum mechanical tunneling for electronic music represents the world's first commercial application of molecular electronics, with >3000 units currently in consumer hands. The all-carbon MJ consisting of aromatic molecules and oligomers between vapor-deposited carbon electrodes exploits covalent, C-C bonding which avoids the electromigration problem of metal contacts. The high bias and temperature stability as well as partial transparency of the all-carbon MJ permit a wide range of experiments to determine charge transport mechanisms and observe photoeffects to both characterize and stimulate operating MJs. As shown in the Conspectus figure, our group has reported a variety of electronic functions, many of which do not have analogs in conventional semiconductors. Much of the described research is oriented toward the rational design of electronic functions, in which electronic characteristics are determined by molecular structure.In addition to the fabrication of molecular electronic devices with sufficient stability and operating life for practical applications, our approach was directed at two principal questions: how do electrons move through molecules that are components of an electronic circuit, and what can we do with molecules that we cannot do with existing semiconductor technology? The central component is the molecular junction consisting of a 1-20+ nm layer of covalently bonded oligomers between two electrodes of conducting, mainly sp²-hybridized carbon. In addition to describing the unique junction structure and fabrication methods, this Account summarizes the valuable insights available from photons used both as probes of device structure and dynamics and as prods to stimulate resonant transport through molecular orbitals.Short-range (<5 nm) transport by tunneling and its properties are discussed separately from the longer-range transport (5-60 nm) which bridges the gap between tunneling and transport in widely studied organic semiconductors. Most molecular electronic studies deal with the <5 nm thickness range, where coherent tunneling is generally accepted as the dominant transport mechanism. However, the rational design of devices in this range by changing molecular structure is frustrated by electronic interactions with the conducting contacts, resulting in weak structural effects on electronic behavior. When the molecular layer thickness exceeds 5 nm, transport characteristics change completely since molecular orbitals become the conduits for transport. Incident photons can stimulate transport, with the observed photocurrent tracking the absorption spectrum of the molecular layer. Low-temperature, activationless transport of photogenerated carriers is possible for up to at least 60 nm, with characteristics completely distinct from coherent tunneling and from the hopping mechanisms proposed for organic semiconductors. The Account closes with examples of phenomena and applications enabled by molecular electronics which may augment conventional microelectronics with chemical functions such as redox charge storage, orbital transport, and energy-selective photodetection.

High-Yield Functional Molecular Electronic Devices

An ultimate goal of molecular electronics, which seeks to incorporate molecular components into electronic circuit units, is to generate functional molecular electronic devices using individual or ensemble molecules to fulfill the increasing technical demands of the miniaturization of traditional silicon-based electronics. This review article presents a summary of recent efforts to pursue this ultimate aim, covering the development of reliable device platforms for high-yield ensemble molecular junctions and their utilization in functional molecular electronic devices, in which distinctive electronic functionalities are observed due to the functional molecules. In addition, other aspects pertaining to the practical application of molecular devices such as manufacturing compatibility with existing complementary metal-oxide-semiconductor technology, their integration, and flexible device applications are also discussed. These advances may contribute to a deeper understanding of charge transport characteristics through functional molecular junctions and provide a desirable roadmap for future practical molecular electronics applications.

Multilevel memristor effect in metal-semiconductor core-shell nanoparticles tested by scanning tunneling spectroscopy

We have grown gold (Au) and copper-zinc-tin-sulfide (CZTS) nanocrystals and Au-CZTS core-shell nanostructures, with gold in the core and the semiconductor in the shell layer, through a high-temperature colloidal synthetic approach. Following usual characterization, we formed ultrathin layers of these in order to characterize the nanostructures in an ultrahigh-vacuum scanning tunneling microscope. Scanning tunneling spectroscopy of individual nanostructures showed the memristor effect or resistive switching from a low- to a high-conducting state upon application of a suitable voltage pulse. The Au-CZTS core-shell nanostructures also show a multilevel memristor effect with the nanostructures undergoing two transitions in conductance at two magnitudes of voltage pulse. We have studied the reproducibility, reversibility, and retentivity of the multilevel memristors. From the normalized density of states (NDOS), we infer that the memristor effect is correlated to a decrease in the transport gap of the nanostructures. We also infer that the memristor effect occurs in the nanostructures due to an increase in the density of available states upon application of a voltage pulse.

Electron transport in all-carbon molecular electronic devices

Carbon has always been an important electrode material for electrochemical applications, and the relatively recent development of carbon nanotubes and graphene as electrodes has significantly increased interest in the field. Carbon solids, both sp² and sp³ hybridized, are unique in their combination of electronic conductivity and the ability to form strong bonds to a variety of other elements and molecules. The Faraday Discussion included broad concepts and applications of carbon materials in electrochemistry, including analysis, energy storage, materials science, and solid-state electronics. This introductory paper describes some of the special properties of carbon materials useful in electrochemistry, with particular illustrations in the realm of molecular electronics. The strong bond between sp² conducting carbon and aromatic organic molecules enables not only strong electronic interactions across the interface between the two materials, but also provides sufficient stability for practical applications. The last section of the paper discusses several factors which affect the electron transfer kinetics at highly ordered pyrolytic graphite, some of which are currently controversial. These issues bear on the general question of how the structure and electronic properties of the carbon electrode material control its utility in electrochemistry and electron transport, which are the core principles of electrochemistry using carbon electrodes.

Anatomy of a nanoscale conduction channel reveals the mechanism of a high-performance memristor

By employing a precise method for locating and directly imaging the active switching region in a resistive random access memory (RRAM) device, a nanoscale conducting channel consisting of an amorphous Ta(O) solid solution surrounded by nearly stoichiometric Ta(2) O(5) is observed. Structural and chemical analysis of the channel combined with temperature-dependent transport measurements indicate a unique resistance switching mechanism.

Electron-beam evaporated silicon as a top contact for molecular electronic device fabrication

This paper discusses the electronic properties of molecular devices made using covalently bonded molecular layers on carbon surfaces with evaporated silicon top contacts. The Cu "top contact" of previously reported carbon/molecule/Cu devices was replaced with e-beam deposited Si in order to avoid Cu oxidation or electromigration, and provide further insight into electron transport mechanisms. The fabrication and characterization of the devices is detailed, including a spectroscopic assessment of the molecular layer integrity after top contact deposition. The electronic, optical, and structural properties of the evaporated Si films are assessed in order to determine the optical gap, work function, and film structure, and show that the electron beam evaporated Si films are amorphous and have suitable conductivity for molecular junction fabrication. The electronic characteristics of Si top contact molecular junctions made using different molecular layer structures and thicknesses are used to evaluate electron transport in these devices. Finally, carbon/molecule/silicon devices are compared to analogous carbon/molecule/metal junctions and the possible factors that control the conductance of molecular devices with differing contact materials are discussed.

Analytical chemistry in molecular electronics

This review discusses the analytical characterization of molecular electronic devices and structures relevant thereto. In particular, we outline the methods for probing molecular junctions, which contain an ensemble of molecules between two contacts. We discuss the analytical methods that aid in the fabrication and characterization of molecular junctions, beginning with the confirmation of the placement of a molecular layer on a conductive or semiconductive substrate. We emphasize methods that provide information about the molecular layer in the junction and outline techniques to ensure molecular layer integrity after the complete fabrication of a device. In addition, we discuss the analytical information derived during the actual device operation.

Microfabrication and integration of diazonium-based aromatic molecular junctions

Microfabrication techniques common in commercial semiconductor manufacturing were used to produce carbon/nitroazobenzene/Cu/Au molecular junctions with a range of areas from 3×3 to 400×400 μm, starting with 100-mm-diameter silicon wafers. The approach exhibited high yield (90-100%) and excellent reproducibility of the current density (relative standard deviation of typically 15%) and 32 devices on a chip. Electron-beam-deposited carbon films are introduced as substrates and may be applied at the full wafer level before dicing and electrochemical deposition of the molecular layer. The current scaled with the device area over a factor of >600, and the current density was quantitatively consistent with structurally similar molecular junctions made by other techniques. The current densities were weakly dependent on temperature over the range of 100-390 K, and maximum current densities above 400 A/cm2 were observed without breakdown. To simulate processing and operation conditions, the junction stability was tested at elevated temperatures. The JV curves of microfabricated junctions were unchanged after 22 h at 100 °C. A ∼50% increase in the current density was observed after 20 h at 150 °C but then remained constant for an additional 24 h. Parallel fabrication, thermal stability, and high yield are required for practical applications of molecular electronics, and the reported results provide important steps toward integration of molecular electronic devices with commercial processes and devices.

Penetration of thin C60 films by metal nanoparticles

Metal nanoparticles supported by thin films are important in the fields of molecular electronics, biotechnology and catalysis, among others. Penetration of these nanoparticles through their supporting films can be undesirable in some circumstances but desirable in others, and is often considered to be a diffusive process. Here, we demonstrate a mechanism for the penetration of thin films and other nanoscopic barriers that is different from simple diffusion. Silver clusters that are soft-landed onto a monolayer of C(60) supported by gold sink through the monolayer in a matter of hours. However, the clusters are stable when landed onto two monolayers of C(60) supported on gold, or on one monolayer of C(60) supported on graphite. With backing from atomistic calculations, these results demonstrate that a metallic substrate exerts attractive forces on metallic nanoparticles that are separated from the substrate by a single monolayer.

Enhancement of electrical bistability through semiconducting nanoparticles for organic memory applications

We report that an enhancement in electrical bistability in devices based on organic molecules can be achieved by the introduction of semiconducting nanoparticles. Here, devices based on alternate layers of a dye in the xanthene class and CdSe nanoparticles have been compared with devices based on the individual components. Results from dye/CdSe devices have yielded an appreciable enhancement in electrical bistability compared with those based on the dye or the nanoparticles. The enhancement is due to augmented carrier transport through the nanoparticles to the dye that consequently undergoes a change in its conformation, having a higher conductivity. We have evidenced read-only and random-access memory applications in the dye/nanoparticle hybrid system.

Core-shell hybrid nanoparticles with functionalized quantum dots and ionic dyes: growth, monolayer formation, and electrical bistability

We report growth, monolayer formation, and (electrical bistability and memory phenomenon) properties of hybrid core-shell nanoparticles. While inorganic quantum dots, such as CdS or CdSe, act as the core, a monolayer of ionic organic dye molecules, electrostatically bound to the surface of functionalized quantum dots, forms the shell. We form a monolayer of the core-shell hybrid nanoparticles via a layer-by-layer electrostatic assembly process. Growth and monolayer formation of the organic-inorganic hybrid nanoparticles have been substantiated by usual characterization methods, including electronic absorption spectroscopy of dispersed solution and atomic force microscope images of scratched films. Devices based on the hybrid nanoparticles have exhibited electrical bistability and memory phenomena. From the comparison of these properties in core-shell nanoparticles and in its components, we infer that the degree of conductance switching or on/off ratio is substantially higher in the hybrid nanoparticles. Also, they (core-shell particles) provide routes to tune the bistability and memory phenomena by choosing either of the components. A monolayer of hybrid nanoparticles has been characterized by a scanning tunneling microscope tip as the other electrode. We show that a single core-shell hybrid nanoparticle can exhibit bistability with an associated memory phenomenon. Charge confinement, as evidenced by an increase in the density of states, has been found to be the mechanism of electrical bistability.

Molecular electronics using diazonium-derived adlayers on carbon with Cu top contacts: critical analysis of metal oxides and filaments

Evaporation of Cu metal onto thin (less than 5 nm) molecular layers bonded to conductive carbon substrates results in electronic junctions with an ensemble of molecules sandwiched between two conductors. The resulting devices have previously been characterized through analysis of current density-voltage (j-V) curves for several different molecular layers and as a function of layer thickness. The approach represents an 'ensemble' rather than 'single molecule' technique, in which the electronic response represents that of a large number of molecules (10(6)-10(12)) in parallel as well as the conducting contacts contained in the molecular junction. In this paper, we extend a more detailed investigation of two critical issues: the possibility of conduction by metal filaments, and the potential role of top contact oxidation contributing to the electronic properties of the junctions. The results show that the conductance of the junctions can be modulated by changes in the deposition environment, but that the changes are not related to Cu oxide in the top contact. Based on these results, we propose that the conditions during top contact deposition change the way in which the molecules contact the metal, leading to differences in the effective junction area. Finally, through systematic studies using variation of the temperature, we show that metal filament conduction is distinct from that observed for the molecular junctions and that if the current observed experimentally passed through nanoscopic metal filaments the Joule heating would lead to rapid melting. For a series of junctions with structurally related aromatic molecules (including biphenyl, nitrobiphenyl, fluorene, and nitroazobenzene), the electron transfer mechanism is briefly investigated using area-independent analysis methods. It is shown that field emission and/or transport through bands formed by the molecular layer is likely, based on the weak temperature dependence of junction conductance.

Alligator clips to molecular dimensions

Techniques for fabricating nanospaced electrodes suitable for studying electron tunneling through metal-molecule-metal junctions are described. In one approach, top contacts are deposited/placed on a self-assembled monolayer or Langmuir-Blodgett film resting on a conducting substrate, the bottom contact. The molecular component serves as a permanent spacer that controls and limits the electrode separations. The top contact can be a thermally deposited metal film, liquid mercury drop, scanning probe tip, metallic wire or particle. Introduction of the top contact can greatly affect the electrical conductance of the intervening molecular film by chemical reaction, exerting pressure, or simply migrating through the organic layer. Alternatively, vacant nanogaps can be fabricated and the molecular component subsequently inserted. Strategies for constructing vacant nanogaps include mechanical break junction, electromigration, shadow mask lithography, focused ion beam deposition, chemical and electrochemical plating techniques, electron-beam lithography, and molecular and atomic rulers. The size of the nanogaps must be small enough to allow the molecule to connect both leads and large enough to keep the molecules in a relaxed and undistorted state. A significant advantage of using vacant nanogaps in the construction of metal-molecule-metal devices is that the junction can be characterized with and without the molecule in place. Any electrical artifacts introduced by the electrode fabrication process are more easily deconvoluted from the intrinsic properties of the molecule.

Nanowires of metal-organic complex by photocrystallization: a system to achieve addressable electrically bistable devices and memory elements

A new method has been achieved to form a Cu:benzoquinone derivative (DDQ) charge-transfer complex by the photoexcitation of [Cu(DDQ)2(CH 3COO)2] ( 1) that has been synthesized by the reaction of DDQ and hydrated cupric acetate in acetonitrile. Photoexcitation of coordinated complex 1 leads to the formation of charge-transfer complex Cu2+(DDQ(.-)2 ( 2). The charge transfer complex 2, when spun on solid substrates, forms nanowires. Sandwich structures of 2 exhibit electrical bistability associated with memory phenomenon. Read-only and random-access memory phenomena are evidenced in nanowires of 2 providing a route to attend the issues pertaining to the addressibility of organic memory devices.

Size-dependent charge collection in junctions containing single-size and multi-size arrays of colloidal CdSe quantum dots

This paper describes the electrical characteristics of junctions composed of three-dimensional arrays of colloidal CdSe quantum dots (QDs) with tin-doped indium oxide (ITO)/poly(3,4-ethylenedioxy-thiophene):poly(styrenesulfonate) (PEDOT:PSS) and eutectic Ga-In (EGaIn) electrodes. It focuses on a comparison of junctions containing QDs of one size to those of arrays containing QDs of multiple sizes. This comparison makes it possible to estimate the relative contributions of transport across various interfaces (e.g., between the QDs and between the QDs and the electrodes) to the observed electrical characteristics of the junction and to evaluate the dependence of these contributions on the locations of various sizes of QDs within the junction. The junctions were diodes, and their turn-on voltage depended on the size of the QDs next to the PEDOT:PSS. We describe this dependence using a Marcus model to estimate the barrier for charge transfer induced by the difference in energies between the orbitals of the QDs and the valence band of PEDOT:PSS.

Conductance switching in an organic material: from bulk to monolayer

Fluorescein sodium, which does not exhibit electrical bistability in thin films, can be switched to a high conducting state by the introduction of carbon nanotubes as channels for carrier transport. Thin films based on fluorescein sodium/carbon nanotubes display memory switching phenomenon among a low conducting state and several high conducting states. Read-only and random-access memory applications between the states resulted in multilevel memory in these systems. Results in thin films and in a monolayer (deposited via layer-by-layer assembly) show that instead of different molecular conformers, multilevel conducting states arise from the different density of high conducting fluorescein molecules.

Normal and surface-enhanced Raman spectroscopy of nitroazobenzene submonolayers and multilayers on carbon and silver surfaces

Raman and ultraviolet-visible (UV-Vis) absorption spectra were obtained for nitroazobenzene (NAB) chemisorbed on smooth and rough silver, and they were compared to published spectra for NAB on sp(2) hybridized pyrolyzed photoresist film (PPF) surfaces. High signal-to-noise ratio Raman spectra were obtained for 4.5 nm thick NAB films on PPF and smooth Ag due to significant enhancement of the NAB scattering relative to that observed in solution. The UV-Vis spectra of chemisorbed NAB exhibited a significant shift toward longer wavelength, thus bringing the NAB absorption closer to the 514.5 nm laser wavelength. The red shift was larger for PPF than for smooth Ag, consistent with the approximately 5x stronger Raman signal obtained on PPF. Deposition of Ag onto quartz without a chromium adhesion layer produced a rough Ag surface that enhanced the Raman spectrum of chemisorbed NAB by a factor of approximately 1000, as expected for roughened Ag due to electromagnetic field enhancement. The strong Raman signal permitted observation of NAB at low coverage and revealed changes in the NAB spectrum as the film progressed from submonolayer to multilayer thicknesses. Finally, deposition of Ag onto PPF/NAB samples through a metal grid produced Ag squares on top of the NAB, which enhanced the Raman scattering of the NAB layer by a factor of approximately 100. Deposition of a final conducting film on the Ag squares should permit in situ observation of a wide range of molecules in operating molecular electronic junctions.