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Gradient area-selective deposition for seamless gap-filling in 3D nanostructures through surface chemical reactivity control. Nat Commun 2022; 13:7597. [PMID: 36494441 PMCID: PMC9734176 DOI: 10.1038/s41467-022-35428-6] [Citation(s) in RCA: 5] [Impact Index Per Article: 2.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 03/16/2022] [Accepted: 12/01/2022] [Indexed: 12/13/2022] Open
Abstract
The integration of bottom-up fabrication techniques and top-down methods can overcome current limits in nanofabrication. For such integration, we propose a gradient area-selective deposition using atomic layer deposition to overcome the inherent limitation of 3D nanofabrication and demonstrate the applicability of the proposed method toward large-scale production of materials. Cp(CH3)5Ti(OMe)3 is used as a molecular surface inhibitor to prevent the growth of TiO2 film in the next atomic layer deposition process. Cp(CH3)5Ti(OMe)3 adsorption was controlled gradually in a 3D nanoscale hole to achieve gradient TiO2 growth. This resulted in the formation of perfectly seamless TiO2 films with a high-aspect-ratio hole structure. The experimental results were consistent with theoretical calculations based on density functional theory, Monte Carlo simulation, and the Johnson-Mehl-Avrami-Kolmogorov model. Since the gradient area-selective deposition TiO2 film formation is based on the fundamentals of molecular chemical and physical behaviours, this approach can be applied to other material systems in atomic layer deposition.
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Kokkonen E, Kaipio M, Nieminen HE, Rehman F, Miikkulainen V, Putkonen M, Ritala M, Huotari S, Schnadt J, Urpelainen S. Ambient pressure x-ray photoelectron spectroscopy setup for synchrotron-based in situ and operando atomic layer deposition research. THE REVIEW OF SCIENTIFIC INSTRUMENTS 2022; 93:013905. [PMID: 35104956 DOI: 10.1063/5.0076993] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/29/2021] [Accepted: 12/28/2021] [Indexed: 06/14/2023]
Abstract
An ambient pressure cell is described for conducting synchrotron-based x-ray photoelectron spectroscopy (XPS) measurements during atomic layer deposition (ALD) processes. The instrument is capable of true in situ and operando experiments in which it is possible to directly obtain elemental and chemical information from the sample surface using XPS as the deposition process is ongoing. The setup is based on the ambient pressure XPS technique, in which sample environments with high pressure (several mbar) can be created without compromising the ultrahigh vacuum requirements needed for the operation of the spectrometer and the synchrotron beamline. The setup is intended for chemical characterization of the surface intermediates during the initial stages of the deposition processes. The SPECIES beamline and the ALD cell provide a unique experimental platform for obtaining new information on the surface chemistry during ALD half-cycles at high temporal resolution. Such information is valuable for understanding the ALD reaction mechanisms and crucial in further developing and improving ALD processes. We demonstrate the capabilities of the setup by studying the deposition of TiO2 on a SiO2 surface by using titanium(IV) tetraisopropoxide and water as precursors. Multiple core levels and the valence band of the substrate surface were followed during the film deposition using ambient pressure XPS.
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Affiliation(s)
- E Kokkonen
- MAX IV Laboratory, Lund University, Box 118, 221 00 Lund, Sweden
| | - M Kaipio
- Department of Chemistry, University of Helsinki, FI-00014 Helsinki, Finland
| | - H-E Nieminen
- Department of Chemistry, University of Helsinki, FI-00014 Helsinki, Finland
| | - F Rehman
- Division of Synchrotron Radiation Research, Department of Physics, Lund University, P.O. Box 118, 221 00 Lund, Sweden
| | - V Miikkulainen
- Department of Chemistry and Materials Science, Aalto University, 00076 Aalto, Finland
| | - M Putkonen
- Department of Chemistry, University of Helsinki, 00014 Helsinki, Finland
| | - M Ritala
- Department of Chemistry, University of Helsinki, 00014 Helsinki, Finland
| | - S Huotari
- Department of Physics, University of Helsinki, 00014 Helsinki, Finland
| | - J Schnadt
- MAX IV Laboratory, Lund University, Box 118, 221 00 Lund, Sweden
| | - S Urpelainen
- Nano and Molecular Systems Research Unit, University of Oulu, 90014 Oulu, Finland
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Cop P, Hess K, Werner S, Meinusch R, Smarsly BM, Kozuka H. Comparison of In-Plane Stress Development in Sol-Gel- and Nanoparticle-Derived Mesoporous Metal Oxide Thin Films. LANGMUIR : THE ACS JOURNAL OF SURFACES AND COLLOIDS 2019; 35:16427-16437. [PMID: 31746614 DOI: 10.1021/acs.langmuir.9b02455] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.2] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/10/2023]
Abstract
By using an evaporation-induced self-assembly (EISA) process, mesoporous metal oxide thin films are prepared via molecular precursors undergoing a sol-gel transition or by using nanoparticle dispersions as the starting materials. Both methods are employed together with PIB50-b-PEO45 as the structure-directing agent to produce porous TiO2 and ZrO2 thin films with spherical mesopores of around 14 nm in diameter. These nanoparticle- and sol-gel-derived films were investigated in terms of the intrinsic in-plane stress development during the heat treatment up to 500 °C to evaluate the impact of solvent evaporation, template decomposition and crystallization on the mechanical state of the film. The investigation revealed the lowest intrinsic stress for the nanoparticle-derived mesoporous film, which is assigned to the combination of the relaxing effects of the utilized diblock copolymer and the interparticular gaps between the precrystalline nanoparticles. Furthermore, the residual in-plane stress was studied after annealing steps ranging from 300 to 1000 °C and cooling down to room temperature. Here, TiO2 nanoparticle-derived mesoporous films possess a lower residual stress than the sol-gel-derived mesoporous films, while in the case of ZrO2 films, sol-gel-derived coatings reveal the smallest residual stress. The latter is based on the lower thermal expansion coefficient of the dominant monoclinic crystal phase compared to that of the silicon substrate. Hence, the present crystal structure has a strong influence on the mechanical state. The observation in this study helps to further understand the stress-related mechanical properties and the formation of mesoporous metal oxides.
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Affiliation(s)
- Pascal Cop
- Physikalisch-Chemisches Institut , Justus Liebig University , Heinrich-Buff-Ring 17 , 35392 Giessen , Germany
- Center of Materials Research , Justus Liebig University , Heinrich-Buff-Ring 16 , 35392 Giessen , Germany
| | - Kevin Hess
- Physikalisch-Chemisches Institut , Justus Liebig University , Heinrich-Buff-Ring 17 , 35392 Giessen , Germany
- Center of Materials Research , Justus Liebig University , Heinrich-Buff-Ring 16 , 35392 Giessen , Germany
- Department of Chemistry and Materials Engineering , Kansai University , 3-3-35 Yamate-cho , Suita , Osaka 564-8680 , Japan
| | - Sebastian Werner
- Physikalisch-Chemisches Institut , Justus Liebig University , Heinrich-Buff-Ring 17 , 35392 Giessen , Germany
- Center of Materials Research , Justus Liebig University , Heinrich-Buff-Ring 16 , 35392 Giessen , Germany
| | - Rafael Meinusch
- Physikalisch-Chemisches Institut , Justus Liebig University , Heinrich-Buff-Ring 17 , 35392 Giessen , Germany
- Center of Materials Research , Justus Liebig University , Heinrich-Buff-Ring 16 , 35392 Giessen , Germany
| | - Bernd M Smarsly
- Physikalisch-Chemisches Institut , Justus Liebig University , Heinrich-Buff-Ring 17 , 35392 Giessen , Germany
- Center of Materials Research , Justus Liebig University , Heinrich-Buff-Ring 16 , 35392 Giessen , Germany
| | - Hiromitsu Kozuka
- Department of Chemistry and Materials Engineering , Kansai University , 3-3-35 Yamate-cho , Suita , Osaka 564-8680 , Japan
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Dendooven J, Solano E, Minjauw MM, Van de Kerckhove K, Coati A, Fonda E, Portale G, Garreau Y, Detavernier C. Mobile setup for synchrotron based in situ characterization during thermal and plasma-enhanced atomic layer deposition. THE REVIEW OF SCIENTIFIC INSTRUMENTS 2016; 87:113905. [PMID: 27910568 DOI: 10.1063/1.4967711] [Citation(s) in RCA: 5] [Impact Index Per Article: 0.6] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/06/2023]
Abstract
We report the design of a mobile setup for synchrotron based in situ studies during atomic layer processing. The system was designed to facilitate in situ grazing incidence small angle x-ray scattering (GISAXS), x-ray fluorescence (XRF), and x-ray absorption spectroscopy measurements at synchrotron facilities. The setup consists of a compact high vacuum pump-type reactor for atomic layer deposition (ALD). The presence of a remote radio frequency plasma source enables in situ experiments during both thermal as well as plasma-enhanced ALD. The system has been successfully installed at different beam line end stations at the European Synchrotron Radiation Facility and SOLEIL synchrotrons. Examples are discussed of in situ GISAXS and XRF measurements during thermal and plasma-enhanced ALD growth of ruthenium from RuO4 (ToRuS™, Air Liquide) and H2 or H2 plasma, providing insights in the nucleation behavior of these processes.
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Affiliation(s)
- Jolien Dendooven
- Department of Solid State Sciences, COCOON, Ghent University, Krijgslaan 281/S1, B-9000 Ghent, Belgium
| | - Eduardo Solano
- Department of Solid State Sciences, COCOON, Ghent University, Krijgslaan 281/S1, B-9000 Ghent, Belgium
| | - Matthias M Minjauw
- Department of Solid State Sciences, COCOON, Ghent University, Krijgslaan 281/S1, B-9000 Ghent, Belgium
| | - Kevin Van de Kerckhove
- Department of Solid State Sciences, COCOON, Ghent University, Krijgslaan 281/S1, B-9000 Ghent, Belgium
| | - Alessandro Coati
- Synchrotron SOLEIL, L'Orme des Merisiers, Saint-Aubin, BP48, 91192 Gif-sur-Yvette, France
| | - Emiliano Fonda
- Synchrotron SOLEIL, L'Orme des Merisiers, Saint-Aubin, BP48, 91192 Gif-sur-Yvette, France
| | - Giuseppe Portale
- DUBBLE Beamline BM26, ESRF European Synchrotron, Avenue des Martyrs, CS40220, 38043 Grenoble, France
| | - Yves Garreau
- Synchrotron SOLEIL, L'Orme des Merisiers, Saint-Aubin, BP48, 91192 Gif-sur-Yvette, France
| | - Christophe Detavernier
- Department of Solid State Sciences, COCOON, Ghent University, Krijgslaan 281/S1, B-9000 Ghent, Belgium
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Dendooven J, Devloo-Casier K, Ide M, Grandfield K, Kurttepeli M, Ludwig KF, Bals S, Van Der Voort P, Detavernier C. Atomic layer deposition-based tuning of the pore size in mesoporous thin films studied by in situ grazing incidence small angle X-ray scattering. NANOSCALE 2014; 6:14991-14998. [PMID: 25363826 DOI: 10.1039/c4nr05049e] [Citation(s) in RCA: 12] [Impact Index Per Article: 1.2] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/04/2023]
Abstract
Atomic layer deposition (ALD) enables the conformal coating of porous materials, making the technique suitable for pore size tuning at the atomic level, e.g., for applications in catalysis, gas separation and sensing. It is, however, not straightforward to obtain information about the conformality of ALD coatings deposited in pores with diameters in the low mesoporous regime (<10 nm). In this work, it is demonstrated that in situ synchrotron based grazing incidence small angle X-ray scattering (GISAXS) can provide valuable information on the change in density and internal surface area during ALD of TiO(2) in a porous titania film with small mesopores (3-8 nm). The results are shown to be in good agreement with in situ X-ray fluorescence data representing the evolution of the amount of Ti atoms deposited in the porous film. Analysis of both datasets indicates that the minimum pore diameter that can be achieved by ALD is determined by the size of the Ti-precursor molecule.
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Affiliation(s)
- Jolien Dendooven
- Department of Solid State Sciences, COCOON, Ghent University, Krijgslaan 281/S1, B-9000 Ghent, Belgium.
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Borges J, Mano JF. Molecular Interactions Driving the Layer-by-Layer Assembly of Multilayers. Chem Rev 2014; 114:8883-942. [DOI: 10.1021/cr400531v] [Citation(s) in RCA: 609] [Impact Index Per Article: 60.9] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 02/07/2023]
Affiliation(s)
- João Borges
- 3B’s
Research Group—Biomaterials, Biodegradables and Biomimetics, University of Minho, Headquarters of the European Institute of Excellence on Tissue Engineering and Regenerative Medicine, AvePark, Zona Industrial da Gandra,
S. Cláudio do Barco 4806-909 Caldas das Taipas, Guimarães, Portugal
- ICVS/3B’s
− PT Government Associate Laboratory, Braga/Guimarães, Portugal
| | - João F. Mano
- 3B’s
Research Group—Biomaterials, Biodegradables and Biomimetics, University of Minho, Headquarters of the European Institute of Excellence on Tissue Engineering and Regenerative Medicine, AvePark, Zona Industrial da Gandra,
S. Cláudio do Barco 4806-909 Caldas das Taipas, Guimarães, Portugal
- ICVS/3B’s
− PT Government Associate Laboratory, Braga/Guimarães, Portugal
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Sun Y, Krishtab M, Struyf H, Verdonck P, De Feyter S, Baklanov MR, Armini S. Impact of plasma pretreatment and pore size on the sealing of ultra-low-k dielectrics by self-assembled monolayers. LANGMUIR : THE ACS JOURNAL OF SURFACES AND COLLOIDS 2014; 30:3832-3844. [PMID: 24621316 DOI: 10.1021/la404165n] [Citation(s) in RCA: 6] [Impact Index Per Article: 0.6] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/03/2023]
Abstract
Self-assembled monolayers (SAMs) from an 11-cyanoundecyltrichlorosilane (CN-SAM) precursor were deposited on porous SiCOH low-k dielectrics with three different pore radii, namely, 1.7, 0.7, and lower than 0.5 nm. The low-k dielectrics were first pretreated with either O2 or He/H2 plasma in order to generate silanol groups on the hydrophobic pristine surface. Subsequently, the SAMs were chemically grafted to the silanol groups on the low-k surface. The SAMs distribution in the low-k films depends on the pore diameter: if the pore diameter is smaller than the size of the SAMs precursors, the SAM molecules are confined to the surface, while if the pore diameter exceeds the van der Waals radius of the SAMs precursor, the SAMs molecules reach deeper in the dielectric. In the latter case, when the pore sidewalls are made hydrophilic by the plasma treatment, the chemical grafting of the SAM precursors follows the profile of the generated silanol groups. The modification depth induced by the O2 plasma is governed by the diffusion of the oxygen radicals into the pores, which makes it the preferred choice for microporous materials. On the other hand, the vacuum ultraviolet (VUV) light plays a critical role, which makes it more suitable for hydrolyzing mesoporous materials. In addition to the density of the surface -OH groups, the nanoscale concave curvature associated with the pores also affects the molecular packing density and ordering with respect to the self-assembly behavior on flat surfaces. A simple model which correlates the low-k pore structure with the plasma hydrophilization mechanism and the SAMs distribution in the pores is presented.
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Affiliation(s)
- Yiting Sun
- Imec, Kapeldreef 75, B-3001, Leuven, Belgium
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