1
|
Wang B, Yin X, Yu S, Wang H. Hysteresis-Free and Bias-Stable Organic Transistors Fabricated by Dip-Coating with a Vertical-Phase-Separation Structure. MATERIALS (BASEL, SWITZERLAND) 2024; 17:1465. [PMID: 38611980 PMCID: PMC11012522 DOI: 10.3390/ma17071465] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/14/2024] [Revised: 03/15/2024] [Accepted: 03/20/2024] [Indexed: 04/14/2024]
Abstract
The morphology of organic films plays a pivotal role in determining the performance of transistor devices. While the dip-coating technique is capable of producing highly oriented organic films, it often encounters challenges such as limited coverage and the presence of defects in gaps between strips, adversely affecting device performance. In this study, we address these challenges by increasing solution viscosity through the incorporation of a substantial proportion of dielectric polymers, thereby enhancing the participation of additional molecules during the film formation process when pulled up. This method produces continuous and oriented organic films with a notable absence of gaps, significantly improving the carrier mobility of transistor devices by more than twofold. Importantly, the fabricated devices exhibit remarkable reliability, showing no hysteresis even after 200 cycles of measurement. Furthermore, the current and threshold voltages of the devices demonstrate exceptional stability, maintaining steady after 10,000 s of bias measurement. This approach provides a solution for the cost-effective and large-scale production of organic transistors, contributing significantly to the advancement of organic electronics.
Collapse
Affiliation(s)
- Bingxi Wang
- Key Laboratory of Automobile Materials, Ministry of Education, School of Materials Science and Engineering, Jilin University, Changchun 130012, China; (B.W.)
| | - Xiaowen Yin
- Key Laboratory of Automobile Materials, Ministry of Education, School of Materials Science and Engineering, Jilin University, Changchun 130012, China; (B.W.)
| | - Shuwen Yu
- Division of Energy Research Resources, Dalian Institute of Chemical Physics, Chinese Academy of Sciences, Dalian 116023, China
| | - Haibo Wang
- Key Laboratory of Automobile Materials, Ministry of Education, School of Materials Science and Engineering, Jilin University, Changchun 130012, China; (B.W.)
| |
Collapse
|
2
|
Wu Z, Yan Y, Zhao Y, Liu Y. Recent Advances in Realizing Highly Aligned Organic Semiconductors by Solution-Processing Approaches. SMALL METHODS 2022; 6:e2200752. [PMID: 35793415 DOI: 10.1002/smtd.202200752] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/12/2022] [Indexed: 06/15/2023]
Abstract
Solution-processing approaches are widely used for controlling the aggregation structure of organic semiconductors because they are fast, efficient, and have strong practicability. Effective regulation of the aggregation structure of molecules to achieve highly ordered molecular stacking is key to realizing effective carrier transport and high-performance devices. Numerous studies have achieved highly aligned organic semiconductors using different solution-processing approaches. This article provides a detailed review of the prevalent solution-processing technologies and emerging methods developed over the past few years for the alignment of organic semiconducting materials. These technologies and methods are classified according to the processing principle. This review focuses on the principles of different experimental techniques, improvements upon the conventional methods, and state-of-the-art performance of resulting devices. In addition, a brief discussion of the characteristics and development prospects of various methods is presented.
Collapse
Affiliation(s)
- Zeng Wu
- Laboratory of Molecular Materials and Devices, Department of Materials Science, Fudan University, Shanghai, 200433, P. R. China
| | - Yongkun Yan
- Laboratory of Molecular Materials and Devices, Department of Materials Science, Fudan University, Shanghai, 200433, P. R. China
| | - Yan Zhao
- Laboratory of Molecular Materials and Devices, Department of Materials Science, Fudan University, Shanghai, 200433, P. R. China
| | - Yunqi Liu
- Laboratory of Molecular Materials and Devices, Department of Materials Science, Fudan University, Shanghai, 200433, P. R. China
| |
Collapse
|
3
|
Zukun W, Wu R, Chen Z, Ye L, Li H, Zhu H. Ultrafast Electron Transfer Before Singlet Fission and Slow Triplet State Electron Transfer in Pentacene Single Crystal/C 60 Heterostructure. J Phys Chem A 2020; 124:4185-4192. [PMID: 32353232 DOI: 10.1021/acs.jpca.0c01791] [Citation(s) in RCA: 7] [Impact Index Per Article: 1.8] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/30/2022]
Abstract
The singlet fission (SF) process converts one high-energy singlet exciton to two low-energy triplet excitons after absorbing one photon. Organic photovoltaic devices based on the SF process have shown great potential in solar energy conversion to exceed Shockley-Queisser limit. The key to SF photovoltaic devices requires efficient electron transfer (ET) from triplet exciton after SF, which is yet to be thoroughly investigated. Here, we performed thorough photophysical studies in 6,13-Bis(triisopropylsilylethynyl)pentacene (TIPS-pentacene)/C60 heterostructures using TIPS-pentacene microsize single crystal as a well-defined model system. We show the SF process in TIPS-pentacene single crystal occurs by a two-step process, with triplet pair intermediates forming in 75 fs and then dissociating to non-interacting triplets in 1.6 ps. The SF process in single crystal is comparable to that in polycrystalline film. Importantly, we observe a considerable fraction of singlet excitons is quenched by ultrafast (<75 fs) interfacial ET prior to fission and no ET from triplet excitons in 1.5 ns time window. We confirm that the absence of ET is not limited by exciton diffusion but due to very slow (≫1.5 ns) interfacial ET from triplet exciton. The observations contradict expected singlet and triplet ET behaviors based on a simple two-state Marcus ET model and suggest long-range interfacial ET from delocalized photoexcitation. The ultrafast ET from singlet exciton before SF and slow ET from triplet exciton call for reconsideration and careful design of efficient SF photovoltaic devices.
Collapse
Affiliation(s)
- Wang Zukun
- Centre for Chemistry of High-Performance & Novel Materials, Department of Chemistry, Zhejiang University, Hangzhou 310027, Zhejiang, China
| | - Ruihan Wu
- MOE Key Laboratory of Macromolecule Synthesis and Functionalization, State Key Laboratory of Silicon Materials, Department of Polymer Science and Engineering, Zhejiang University, Hangzhou 310027, P. R. China
| | - Zeng Chen
- Centre for Chemistry of High-Performance & Novel Materials, Department of Chemistry, Zhejiang University, Hangzhou 310027, Zhejiang, China
| | - Lei Ye
- Centre for Chemistry of High-Performance & Novel Materials, Department of Chemistry, Zhejiang University, Hangzhou 310027, Zhejiang, China
| | - Hanying Li
- MOE Key Laboratory of Macromolecule Synthesis and Functionalization, State Key Laboratory of Silicon Materials, Department of Polymer Science and Engineering, Zhejiang University, Hangzhou 310027, P. R. China
| | - Haiming Zhu
- Centre for Chemistry of High-Performance & Novel Materials, Department of Chemistry, Zhejiang University, Hangzhou 310027, Zhejiang, China
| |
Collapse
|
4
|
Myles A, Behan JA, Twamley B, Colavita PE, Scanlan EM. Spontaneous Aryldiazonium Grafting for the Preparation of Functional Cyclodextrin-Modified Materials. ACS APPLIED BIO MATERIALS 2018; 1:825-832. [DOI: 10.1021/acsabm.8b00266] [Citation(s) in RCA: 4] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/24/2022]
Affiliation(s)
- Adam Myles
- School of Chemistry, Trinity College Dublin, College Green, Dublin 2, Ireland
| | - James A. Behan
- School of Chemistry, Trinity College Dublin, College Green, Dublin 2, Ireland
| | - Brendan Twamley
- School of Chemistry, Trinity College Dublin, College Green, Dublin 2, Ireland
| | - Paula E. Colavita
- School of Chemistry, Trinity College Dublin, College Green, Dublin 2, Ireland
- CRANN and AMBER Research Centres, Trinity College Dublin, College Green, Dublin 2, Ireland
| | - Eoin M. Scanlan
- School of Chemistry, Trinity College Dublin, College Green, Dublin 2, Ireland
| |
Collapse
|
5
|
Bharti D, Raghuwanshi V, Varun I, Mahato AK, Tiwari SP. Directional Solvent Vapor Annealing for Crystal Alignment in Solution-Processed Organic Semiconductors. ACS APPLIED MATERIALS & INTERFACES 2017; 9:26226-26233. [PMID: 28707466 DOI: 10.1021/acsami.7b03432] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/07/2023]
Abstract
A unified approach of directional solvent vapor annealing for crystal alignment in solution-processed organic semiconductors is proposed. Highly crystalline molecular self-assembly of the drop-cast technique is further enhanced by postprocessing scheme of the solvent vapor annealing with additional benefit of alignment of the crystalline domains. In this technique, a mixture of carrier gas and solvent vapors are made to flow in a certain direction and in the close proximity of the surface of the substrates carrying the solution. Flow of the carrier gas imparts directionality to the semiconducting crystalline ribbons, whereas the influx of the solvent vapors improves the crystalline order in the semiconducting film. The flow rate of the carrier gas and the position of the substrate in the interaction chamber are the primary regulating factors, which have the ability to provide a semiconducting layer with a well-aligned and interconnected assembly of long ribbons. These favorable film properties further materialize in the form of electrical performance of the corresponding field-effect transistors. The versatility of this technique makes it a viable alternative for the solution processing of organic semiconductors.
Collapse
Affiliation(s)
- Deepak Bharti
- Department of Electrical Engineering, Indian Institute of Technology Jodhpur , Jodhpur 342011, Rajasthan, India
| | - Vivek Raghuwanshi
- Department of Electrical Engineering, Indian Institute of Technology Jodhpur , Jodhpur 342011, Rajasthan, India
| | - Ishan Varun
- Department of Electrical Engineering, Indian Institute of Technology Jodhpur , Jodhpur 342011, Rajasthan, India
| | - Ajay Kumar Mahato
- Department of Electrical Engineering, Indian Institute of Technology Jodhpur , Jodhpur 342011, Rajasthan, India
| | - Shree Prakash Tiwari
- Department of Electrical Engineering, Indian Institute of Technology Jodhpur , Jodhpur 342011, Rajasthan, India
| |
Collapse
|
6
|
Zhao H, Wang Z, Dong G, Duan L. Fabrication of highly oriented large-scale TIPS pentacene crystals and transistors by the Marangoni effect-controlled growth method. Phys Chem Chem Phys 2015; 17:6274-9. [DOI: 10.1039/c4cp05378h] [Citation(s) in RCA: 35] [Impact Index Per Article: 3.9] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022]
Abstract
A new solution method of Marangoni effect-controlled oriented growth (MOG) to fabricate highly oriented crystals of TIPS pentacene.
Collapse
Affiliation(s)
- Haoyan Zhao
- Key Laboratory of Organic Optoelectronics and Molecular Engineering of Ministry of Education
- Department of Chemistry
- Tsinghua University
- Beijing
- P. R. China
| | - Zhao Wang
- Key Laboratory of Organic Optoelectronics and Molecular Engineering of Ministry of Education
- Department of Chemistry
- Tsinghua University
- Beijing
- P. R. China
| | - Guifang Dong
- Key Laboratory of Organic Optoelectronics and Molecular Engineering of Ministry of Education
- Department of Chemistry
- Tsinghua University
- Beijing
- P. R. China
| | - Lian Duan
- Key Laboratory of Organic Optoelectronics and Molecular Engineering of Ministry of Education
- Department of Chemistry
- Tsinghua University
- Beijing
- P. R. China
| |
Collapse
|