Volatilize-controlled oriented growth of the single-crystal layer for organic field-effect transistors

Hysteresis-Free and Bias-Stable Organic Transistors Fabricated by Dip-Coating with a Vertical-Phase-Separation Structure

The morphology of organic films plays a pivotal role in determining the performance of transistor devices. While the dip-coating technique is capable of producing highly oriented organic films, it often encounters challenges such as limited coverage and the presence of defects in gaps between strips, adversely affecting device performance. In this study, we address these challenges by increasing solution viscosity through the incorporation of a substantial proportion of dielectric polymers, thereby enhancing the participation of additional molecules during the film formation process when pulled up. This method produces continuous and oriented organic films with a notable absence of gaps, significantly improving the carrier mobility of transistor devices by more than twofold. Importantly, the fabricated devices exhibit remarkable reliability, showing no hysteresis even after 200 cycles of measurement. Furthermore, the current and threshold voltages of the devices demonstrate exceptional stability, maintaining steady after 10,000 s of bias measurement. This approach provides a solution for the cost-effective and large-scale production of organic transistors, contributing significantly to the advancement of organic electronics.

Recent Advances in Realizing Highly Aligned Organic Semiconductors by Solution-Processing Approaches

Solution-processing approaches are widely used for controlling the aggregation structure of organic semiconductors because they are fast, efficient, and have strong practicability. Effective regulation of the aggregation structure of molecules to achieve highly ordered molecular stacking is key to realizing effective carrier transport and high-performance devices. Numerous studies have achieved highly aligned organic semiconductors using different solution-processing approaches. This article provides a detailed review of the prevalent solution-processing technologies and emerging methods developed over the past few years for the alignment of organic semiconducting materials. These technologies and methods are classified according to the processing principle. This review focuses on the principles of different experimental techniques, improvements upon the conventional methods, and state-of-the-art performance of resulting devices. In addition, a brief discussion of the characteristics and development prospects of various methods is presented.

Ultrafast Electron Transfer Before Singlet Fission and Slow Triplet State Electron Transfer in Pentacene Single Crystal/C60 Heterostructure

The singlet fission (SF) process converts one high-energy singlet exciton to two low-energy triplet excitons after absorbing one photon. Organic photovoltaic devices based on the SF process have shown great potential in solar energy conversion to exceed Shockley-Queisser limit. The key to SF photovoltaic devices requires efficient electron transfer (ET) from triplet exciton after SF, which is yet to be thoroughly investigated. Here, we performed thorough photophysical studies in 6,13-Bis(triisopropylsilylethynyl)pentacene (TIPS-pentacene)/C₆₀ heterostructures using TIPS-pentacene microsize single crystal as a well-defined model system. We show the SF process in TIPS-pentacene single crystal occurs by a two-step process, with triplet pair intermediates forming in 75 fs and then dissociating to non-interacting triplets in 1.6 ps. The SF process in single crystal is comparable to that in polycrystalline film. Importantly, we observe a considerable fraction of singlet excitons is quenched by ultrafast (<75 fs) interfacial ET prior to fission and no ET from triplet excitons in 1.5 ns time window. We confirm that the absence of ET is not limited by exciton diffusion but due to very slow (≫1.5 ns) interfacial ET from triplet exciton. The observations contradict expected singlet and triplet ET behaviors based on a simple two-state Marcus ET model and suggest long-range interfacial ET from delocalized photoexcitation. The ultrafast ET from singlet exciton before SF and slow ET from triplet exciton call for reconsideration and careful design of efficient SF photovoltaic devices.

Directional Solvent Vapor Annealing for Crystal Alignment in Solution-Processed Organic Semiconductors

A unified approach of directional solvent vapor annealing for crystal alignment in solution-processed organic semiconductors is proposed. Highly crystalline molecular self-assembly of the drop-cast technique is further enhanced by postprocessing scheme of the solvent vapor annealing with additional benefit of alignment of the crystalline domains. In this technique, a mixture of carrier gas and solvent vapors are made to flow in a certain direction and in the close proximity of the surface of the substrates carrying the solution. Flow of the carrier gas imparts directionality to the semiconducting crystalline ribbons, whereas the influx of the solvent vapors improves the crystalline order in the semiconducting film. The flow rate of the carrier gas and the position of the substrate in the interaction chamber are the primary regulating factors, which have the ability to provide a semiconducting layer with a well-aligned and interconnected assembly of long ribbons. These favorable film properties further materialize in the form of electrical performance of the corresponding field-effect transistors. The versatility of this technique makes it a viable alternative for the solution processing of organic semiconductors.

Fabrication of highly oriented large-scale TIPS pentacene crystals and transistors by the Marangoni effect-controlled growth method

A new solution method of Marangoni effect-controlled oriented growth (MOG) to fabricate highly oriented crystals of TIPS pentacene.