Electrochemical aspects and structure characterization of VA-VIA compound semiconductor Bi2Te3/Sb2Te3 superlattice thin films via electrochemical atomic layer epitaxy

Evolution of the surface state in Bi2Se2Te thin films during phase transition

Topological insulators, a new quantum state of matter, have created exciting opportunities for studies in topological quantum physics and for exploring spintronics applications due to their gapless helical metallic surface states. In this study, thin films composed of alternate layers of Bi and Se (Te) ({Bi(3 Å)Te(9 Å)}n/{Bi(3 Å)Se(9 Å)}n) were fabricated by controlling the layer thickness within the atomic scale using thermal evaporation techniques. The high-purity growth of uniform Bi2Se2Te1 thin films has not yet been achieved using a thermal evaporation method. However, as a result of a self-ordering process during annealing, an as-grown amorphous film with p-type polarity could transform into single crystalline Bi2Se2Te1 with n-type polarity. Using THz-time domain spectroscopy (THz-TDS) and ultraviolet photoemission spectroscopy (UPS), we concluded that the conductivity is dominated by the Drude contribution, suggesting the presence of a quantum well state and surface states. Moreover we demonstrated that the emission of terahertz waves from the (001) surface of the single crystalline Bi2Se2Te1 thin film would be possible under the excitation of 790 nm femtosecond optical pulses, indicating the presence of a Dirac-fermion, a photo-Dember effect at the surface state and the transient current within the surface depletion region. The results reported herein provide useful information regarding a valuable deposition method that can be useful in studies of the evolution of surface state electrons in topological insulators.

Synthesis of metal-semiconductor core-shell nanoparticles using electrochemical surface-limited reactions

We report the synthesis of Au/CuI and Au/CdS core-shell nanoparticle (NP) thin films using codeposition and electrochemical atomic layer deposition (EC-ALD). Au nanoparticle films were prepared on glassy carbon supports by depositing alternating layers of poly(diallyl dimethylammonium)-stabilized Au nanoparticles and CoP(2)W(17)O(61)(8-) polyoxometallate interlayers. From there, CuI was deposited onto the surface of Au nanoparticles using electrochemical atomic layer deposition, while CdS films were grown by an atom-by-atom codeposition method. The semiconductor-Au core-shell nanoparticles were characterized by electrochemistry, photoluminescence spectroscopy, and Raman spectroscopy. Our results indicate that the semiconductors deposit onto the AuNP surface by surface limited electrochemical reactions.