Layer-Thinning Effects on Ferroelectricity and the Ferroelectric-to-Paraelectric Phase Transition of Vinylidene Fluoride−Trifluoroethylene Copolymer Layers

Epitaxy of Ferroelectric P(VDF-TrFE) Films via Removable PTFE Templates and Its Application in Semiconducting/Ferroelectric Blend Resistive Memory

Ferroelectric polymer based devices exhibit great potentials in low-cost and flexible electronics. To meet the requirements of both low voltage operation and low energy consumption, thickness of ferroelectric polymer films is usually required to be less than, for example, 100 nm. However, decrease of film thickness is also accompanied by the degradation of both crystallinity and ferroelectricity and also the increase of current leakage, which surely degrades device performance. Here we report one epitaxy method based on removable poly(tetrafluoroethylene) (PTFE) templates for high-quality fabrication of ordered ferroelectric polymer thin films. Experimental results indicate that such epitaxially grown ferroelectric polymer films exhibit well improved crystallinity, reduced current leakage and good resistance to electrical breakdown, implying their applications in high-performance and low voltage operated ferroelectric devices. On the basis of this removable PTFE template method, we fabricated organic semiconducting/ferroelectric blend resistive films which presented record electrical performance with operation voltage as low as 5 V and ON/OFF ratio up to 10⁵.

Crystallization of ultrathin poly(3-hydroxybutyrate) films in blends with small amounts of poly(l-lactic acid): correlation between film thickness and molecular weight of poly(l-lactic acid)

The crystallization behavior of poly(3-hydroxybutyrate) (PHB) films in blends with small amounts of poly(l-lactic acids) (PLLAs) was investigated by grazing incidence X-ray diffraction (GIXD) and infrared-reflection absorption spectroscopy (IRRAS).

Flexible ferroelectric polymer devices based on inkjet-printed electrodes from nanosilver ink

High-quality silver (Ag) patterns were inkjet-printed with nanosilver ink on a flexible polyethylene terephthalate (PET) substrate. All-solution-processed flexible ferroelectric polymer devices that use inkjet-printed Ag to create their bottom and top electrodes were demonstrated. The active layer, a poly (vinylidene fluoride-trifluoroethylene) (PVDF-TrFE) thin film, was spin-coated from solution. The devices have a remanent polarization of 8.03 μC cm(-2) and a coercive field of 68.5 MV m(-1), which is comparable to the device with evaporated-Ti electrodes on a silicon substrate. Based on the results presented in this paper, mass production of flexible ferroelectric devices is predictable.