Directed Assembly of Block Copolymer Templates for the Fabrication of Mesoporous Silica Films with Controlled Architectures via 3-D Replication

Recent advances in amphiphilic block copolymer templated mesoporous metal-based materials: assembly engineering and applications

Mesoporous metal-based materials (MMBMs) have received unprecedented attention in catalysis, sensing, and energy storage and conversion owing to their unique electronic structures, uniform mesopore size and high specific surface area. In the last decade, great progress has been made in the design and application of MMBMs; in particular, many novel assembly engineering methods and strategies based on amphiphilic block copolymers as structure-directing agents have also been developed for the "bottom-up" construction of a variety of MMBMs. Development of MMBMs is therefore of significant importance from both academic and practical points of view. In this review, we provide a systematic elaboration of the molecular assembly methods and strategies for MMBMs, such as tuning the driving force between amphiphilic block copolymers and various precursors (i.e., metal salts, nanoparticles/clusters and polyoxometalates) for pore characteristics and physicochemical properties. The structure-performance relationship of MMBMs (e.g., pore size, surface area, crystallinity and crystal structure) based on various spectroscopy analysis techniques and density functional theory (DFT) calculation is discussed and the influence of the surface/interfacial properties of MMBMs (e.g., active surfaces, heterojunctions, binding sites and acid-base properties) in various applications is also included. The prospect of accurately designing functional mesoporous materials and future research directions in the field of MMBMs is pointed out in this review, and it will open a new avenue for the inorganic-organic assembly in various fields.

Poly(cyclohexylethylene)-block-Poly(lactide) Oligomers for Ultrasmall Nanopatterning Using Atomic Layer Deposition

Poly(cyclohexylethylene)-block-poly(lactide) (PCHE-PLA) block polymers were synthesized through a combination of anionic polymerization, heterogeneous catalytic hydrogenation and controlled ring-opening polymerization. Ordered thin films of PCHE-PLA with ultrasmall hexagonally packed cylinders oriented perpendicularly to the substrate surface were prepared by spin-coating and subsequent solvent vapor annealing for use in two distinct templating strategies. In one approach, selective hydrolytic degradation of the PLA domains generated nanoporous PCHE templates with an average pore diameter of 5 ± 1 nm corroborated by atomic force microscopy and grazing incidence small-angle X-ray scattering. Alternatively, sequential infiltration synthesis (SIS) was employed to deposit Al2O3 selectively into the PLA domains of PCHE-PLA thin films. A combination of argon ion milling and O2 reactive ion etching (RIE) enabled the replication of the Al2O3 nanoarray from the PCHE-PLA template on diverse substrates including silicon and gold with feature diameters less than 10 nm.

Nanomanufacturing: A Perspective

Nanomanufacturing, the commercially scalable and economically sustainable mass production of nanoscale materials and devices, represents the tangible outcome of the nanotechnology revolution. In contrast to those used in nanofabrication for research purposes, nanomanufacturing processes must satisfy the additional constraints of cost, throughput, and time to market. Taking silicon integrated circuit manufacturing as a baseline, we consider the factors involved in matching processes with products, examining the characteristics and potential of top-down and bottom-up processes, and their combination. We also discuss how a careful assessment of the way in which function can be made to follow form can enable high-volume manufacturing of nanoscale structures with the desired useful, and exciting, properties.

Structural transitions in asymmetric poly(styrene)-block-poly(lactide) thin films induced by solvent vapor exposure

Successive structural transitions in thin films of asymmetric poly(styrene)-block-poly(lactide) (PS-PLA) block copolymer samples upon exposure to tetrahydrofuran (THF) vapors have been monitored using atomic force microscopy (AFM) and both in situ and ex situ grazing incidence small-angle X-ray scattering (GISAXS). A direct link was established between the structure in the swollen state and the morphology formed in the dried state post solvent evaporation. This was related to the high incompatibility between the constituting blocks of the copolymer that thwarted the system from reaching the homogeneous disordered state in the swollen state under the specific conditions utilized in this study. Upon rapid solvent removal, the morphologies formed in the swollen state were trapped due the fast evaporation kinetics. This work provides a better understanding of the mechanisms associated with block copolymer thin film morphology changes induced by solvent vapor annealing.

Blossoming of nanosheet structures via a disturbed self-assembly

Nanofabrication has been critical in all kinds of nanotechnology, not only for achieving various nanostructures or nanosystems but also for the application of the nanotechnology. To achieve controllable but simple nanofabrication is one of the central aspirations for many research communities; here, for the first time, we report the growth of nanosheet structures simply by introducing internal disturbances (adding nanoparticles and surface tension) or external disturbances (deformations) to the self-assembly of copolymers induced by evaporation. Nanoparticles, curved surface, and deformations by such as writing or extension have been employed to demonstrate the sensitivity of the nanosheet structures to various disturbances. Finally, a physical model has been proposed to explain how the disturbances contribute to the formation of the nanosheet structures. These significant results indicate a scalable, writable, cost-effective and environmentally friendly nanotechnology that will stimulate new nanofabrication research.