Transmission electron microscopy study of individual carbon nanotube breakdown caused by Joule heating in air

Ultrastrong Carbon Nanotubes-Copper Core-Shell Wires with Enhanced Electrical and Thermal Conductivities as High-Performance Power Transmission Cables

Demands for high-performance electrical power transmission cables continue to rise, especially for offshore power transmission, electric vehicles, portable electronics, and deployable military applications. Carbon nanotubes (CNTs)-Copper (Cu) core-shell wire is regarded as one of the best candidate material systems for transmitting electricity and thermal energy. In this study, a facile and robust approach was developed to enhance the CNT-Cu interfacial interactions. This approach consists of a substrate-enhanced electroless deposition step for Cu pre-seeding and thiol functionalization. Benefiting from the thiol-activated CNT surface and Cu seed deposit, the CNTs-Cu core-shell wire forms a densely packed Cu shell with a void-free CNT-Cu interface. Consequently, the CNTs-Cu core-shell wire possesses (1) superior specific strength (eightfold stronger), (2) 30% higher specific conductivity, (3) 120% higher specific ampacity, and (4) an impressive 110% higher thermal conductivity compared with pure Cu wires. Moreover, this composite wire still maintains its structural integrity and electrical properties over 600 cycles of the fatigue bending test, rendering this system an excellent candidate for high-performance electrical cable and conductor applications.

Applications of biomemristors in next generation wearable electronics

With the rapid development of mobile internet and artificial intelligence, wearable electronic devices have a great market prospect. In particular, information storage and processing of real-time collected data are an indispensable part of wearable electronic devices. Biomaterial-based memristive systems are suitable for storage and processing of the obtained information in wearable electronics due to the accompanying merits, i.e. sustainability, lightweight, degradability, low power consumption, flexibility and biocompatibility. So far, many biomaterial-based flexible and wearable memristive devices were prepared by spin coating or other technologies on a flexible substrate at room temperature. However, mechanical deformation caused by mechanical mismatch between devices and soft tissues leads to the instability of device performance. From the current research and practical application, the device will face great challenges when adapting to different working environments. In fact, some interesting studies have been performed to address the above issues while they were not intensively highlighted and overviewed. Herein, the progress in wearable biomemristive devices is reviewed, and the outlook and perspectives are provided in consideration of the existing challenges during the development of wearable biomemristive systems.

In situ TEM modification of individual silicon nanowires and their charge transport mechanisms

Correlating the structure and composition of nanowires grown by the vapour-liquid-solid (VLS) mechanism with their electrical properties is essential for designing nanowire devices. In situ transmission electron microscopy (TEM) that can image while simultaneously measuring the current-voltage (I-V) characteristics of individual isolated nanowires is a unique tool for linking changes in structure with electronic transport. Here we grow and electrically connect silicon nanowires inside a TEM to perform in situ electrical measurements on individual nanowires both at high temperature and upon surface oxidation, as well as under ambient conditions. As-grown, the oxide-free nanowires have nonlinear I-V characteristics. We analyse the I-V measurements in terms of both bulk and injection limited transport models, finding Joule heating effects, bulk-limiting effects for thin nanowires and an injection-limiting effect for thick wires when high voltages are applied. When the nanowire surface is modified by in situ oxidation, drastic changes occur in the electronic properties. We investigate the relation between the observed geometry, changes in the surface structure and changes in electronic transport, obtaining information for individual nanowires that is inaccessible to other measuring techniques.

Electronic Stability of Carbon Nanotube Transistors Under Long-Term Bias Stress

Thousands of reports have demonstrated the exceptional performance of sensors based on carbon nanotube (CNT) transistors, with promises of transformative impact. Yet, the effect of long-term bias stress on individual CNTs, critical for most sensing applications, has remained uncertain. Here, we report bias ranges under which CNT transistors can operate continuously for months or more without degradation. Using a custom characterization system, the impacts of defect formation and charge traps on the stability of CNT-based sensors under extended bias are determined. In addition to breakdown, which is well-known, we identify three additional operational modes: full stability, slow decay, and fast decay. We identify a current drift behavior that reduces dynamic range by over four orders of magnitude but is avoidable with appropriate sensing modalities. Identification of these stable operation modes and limits for nanotube-based sensors addresses concerns surrounding their development for a myriad of sensing applications.

Ultrafast structural evolution and formation of linear carbon chains in single-walled carbon nanotube networks by femtosecond laser irradiation

Inter-allotropic structural transformation of sp² structured nanocarbon is a topic of fundamental and technological interest in scalable nanomanufacturing. Such modifications usually require extremely high temperature or high-energy irradiation, and are usually a destructive and time-consuming process. Here, we demonstrate a method for engineering a molecular structure of single-walled carbon nanotubes (SWNTs) and their network properties by femtosecond laser irradiation. This method allows effective coalescence between SWNTs, transforming them into other allotropic nanocarbon structures (double-walled, triple-walled and multi-walled nanotubes) with the formation of linear carbon chains. The nanocarbon network created by this laser-induced transformation process shows extraordinarily strong coalescence induced mode in Raman spectra and two-times enhanced electrical conductivity. This work suggests a powerful method for engineering sp² carbon allotropes and their junctions, which provides possibilities for next generation materials with structural hybridization at the atomic scale.

Flexible Multistate Data Storage Devices Fabricated Using Natural Lignin at Room Temperature

The growing interest in bioinspired and sustainable electronics has induced research on biocompatible and biodegradable materials. However, conventional electronic devices have been restricted due to their nonbiodegradable and sometimes harmful and toxic materials, which can even cause environmental issues. Here, we report a resistive switching random access memory (ReRAM) device based on lignin, which is a biodegradable waste product of the paper industry. The active layer of the device can be easily formed using a simple solution process on a plastic substrate. The memory devices show stable bipolar resistive switching behavior with good endurance and retention. Appropriate control of the maximum reset voltage and compliance current can yield multibit data storage capability with at least four resistance states, which can be exploited to realize a high-density memory device. The resistive switching mechanism may be a result of formation and rupture of carbon-rich filaments. These results suggest that lignin is a promising candidate material for an inexpensive and environmentally benign ReRAM device. We believe that this study can initiate a new route toward development of biocompatible and flexible electronics.

Field emission and anode etching during formation of length-controlled nanogaps in electrical breakdown of horizontally aligned single-walled carbon nanotubes

We observe field emission between nanogaps and voltage-driven gap extension of single-walled carbon nanotubes (SWNTs) on substrates during the electrical breakdown process. Experimental results show that the gap size is dependent on the applied voltage and humidity, which indicates high controllability of the gap size by appropriate adjustment of these parameters in accordance with the application. We propose a mechanism for the gap formation during electrical breakdown as follows. After small gaps are formed by Joule heating-induced oxidation, SWNTs on the anode side are electrochemically etched due to physically-adsorbed water from the air and the enhanced electric field at the SWNT tips. Field emission is measured in a vacuum as a possible mechanism for charge transfer at SWNT gaps. The relationship between the field enhancement factor and geometric features of SWNTs explains both the voltage dependence of the extended gap size and the field emission properties of the SWNT gaps. In addition, the similar field-induced etching can cause damage to adjacent SWNTs, which possibly deteriorates the selectivity for cutting metallic pathways in the presence of water vapor.

Controlling the Resistive Switching Behavior in Starch-Based Flexible Biomemristors

Implementation of biocompatible materials in resistive switching memory (ReRAM) devices provides opportunities to use them in biomedical applications. We demonstrate a robust, nonvolatile, flexible, and transparent ReRAM based on potato starch. We also introduce a biomolecular memory device that has a starch-chitosan composite layer. The ReRAM behavior can be controlled by mixing starch with chitosan in the resistive switching layer. Whereas starch-based biomemory devices which show abrupt changes in current level; the memory device with mixed biopolymers undergoes gradual changes. Both devices exhibit uniform and robust programmable memory properties for nonvolatile memory applications. The explicated source of the bipolar resistive switching behavior is assigned to formation and rupture of carbon-rich filaments. The gradual set/reset behavior in the memory device based on a starch-chitosan mixture makes it suitable for use in neuromorphic devices.

Sculpting carbon bonds for allotropic transformation through solid-state re-engineering of -sp2 carbon

Carbon forms one of nature's strongest chemical bonds; its allotropes having provided some of the most exciting scientific discoveries in recent times. The possibility of inter-allotropic transformations/hybridization of carbon is hence a topic of immense fundamental and technological interest. Such modifications usually require extreme conditions (high temperature, pressure and/or high-energy irradiations), and are usually not well controlled. Here we demonstrate inter-allotropic transformations/hybridizations of specific types that appear uniformly across large-area carbon networks, using moderate alternating voltage pulses. By controlling the pulse magnitude, small-diameter single-walled carbon nanotubes can be transformed predominantly into larger-diameter single-walled carbon nanotubes, multi-walled carbon nanotubes of different morphologies, multi-layered graphene nanoribbons or structures with sp(3) bonds. This re-engineering of carbon bonds evolves via a coalescence-induced reconfiguration of sp(2) hybridization, terminates with negligible introduction of defects and demonstrates remarkable reproducibility. This reflects a potential step forward for large-scale engineering of nanocarbon allotropes and their junctions.

Solution-processed soldering of carbon nanotubes for flexible electronics

We report a simple lithography-free, solution-based method of soldering of carbon nanotubes with Ohmic contacts, by taking specific examples of multi-walled carbon nanotubes (MWNTs). This is achieved by self-assembling a monolayer of soldering precursor, Pd(2+) anchored to 1,10 decanedithiol, onto which MWNTs could be aligned across the gap electrodes via solvent evaporation. The nanosoldering was realized by thermal/electrical activation or by both in sequence. Electrical activation and the following step of washing ensure selective retention of MWNTs spanning across the gap electrodes. The soldered joints were robust enough to sustain strain caused during the bending of flexible substrates as well as during ultrasonication. The estimated temperature generated at the MWNT-Au interface using an electro-thermal model is ∼150 °C, suggesting Joule heating as the primary mechanism of electrical activation. Further, the specific contact resistance is estimated from the transmission line model.

In Situ Real-Time TEM Reveals Growth, Transformation and Function in One-Dimensional Nanoscale Materials: From a Nanotechnology Perspective

This paper summarises recent developments in in situ TEM instrumentation and operation conditions. The focus of the discussion is on demonstrating how improved understanding of fundamental physical phenomena associated with nanowire or nanotube materials, revealed by following transformations in real time and high resolution, can assist the engineering of emerging electronic and optoelectronic devices. Special attention is given to Si, Ge, and compound semiconductor nanowires and carbon nanotubes (CNTs) as one of the most promising building blocks for devices inspired by nanotechnology.

Physical observation of a thermo-morphic transition in a silicon nanowire

A thermo-morphic transition of a silicon nanowire (Si-NW) is investigated in vacuum and air ambients, and notable differences are found under each ambient. In the vacuum ambient, permanent electrical breakdown occurs as a result of the Joule self-heating arising from the applied voltage across both ends of the Si-NW. The resulting current abruptly declines from a maximum value at the breakdown voltage (V(BD)) to zero. In addition, the thermal conductivity of the Si-NW is extracted from the V(BD) values under the vacuum ambient and shows good agreement with previously reported results. While the breakdown of the Si-NW does not exhibit negative differential resistance under the vacuum ambient, it interestingly shows negative differential resistance with multiple resistances in the current-voltage characteristics under the air ambient, similar to the behavior of carbon nanotubes. This behavior is triggered by current-induced oxidation, which leads to the thermo-morphic transition observed by TEM analyses. Additionally, the current-induced oxidation is favorably applied to reduce the size of a Si-NW at a localized and designated point.

A study of Joule heating-induced breakdown of carbon nanotube interconnects

We investigate breakdown of carbon nanotube (CNT) interconnects induced by Joule heating in air and under high vacuum conditions (10(-5) mbar). A CNT with a diameter of 18 nm, which is grown by chemical vapor deposition to connect opposing titanium nitride (TiN) electrodes, is able to carry an electrical power up to 0.6 mW before breaking down under vacuum, with a corresponding maximum current density up to 8 × 10(7) A cm(-2) (compared to 0.16 mW and 2 × 10(7) A cm(-2) in air). Decoration with electrochemically deposited Ni particles allows protection of the CNT interconnect against oxidation and improvement of the heat release through the surrounding environment. A CNT decorated with Ni particles is able to carry an increased electrical power of about 1.5 mW before breaking down under vacuum, with a corresponding maximum current density as high as 1.2 × 10(8) A cm(-2). The Joule heating produced along the current carrying CNT interconnect is able to melt the Ni particles and promotes the formation of titanium carbon nitride which improves the electrical contact between the CNT and the TiN electrodes.

Accelerated reliability testing of highly aligned single-walled carbon nanotube networks subjected to DC electrical stressing

We investigate the electrical reliability of nanoscale lines of highly aligned, networked, metallic/semiconducting single-walled carbon nanotubes (SWCNTs) fabricated through a template-based fluidic assembly process. We find that these SWCNT networks can withstand DC current densities larger than 10 MA cm(-2) for several hours and, in some cases, several days. We develop test methods that show that the degradation rate, failure predictability and total device lifetime can be linked to the initial resistance. Scanning electron and transmission electron microscopy suggest that fabrication variability plays a critical role in the rate of degradation, and we offer an empirical method of quickly determining the long-term performance of a network. We find that well-fabricated lines subject to constant electrical stress show a linear accumulation of damage reminiscent of electromigration in metallic interconnects, and we explore the underlying physical mechanisms that could cause such behavior.

Healing of broken multiwalled carbon nanotubes using very low energy electrons in SEM: a route toward complete recovery

We report the healing of electrically broken multiwalled carbon nanotubes (MWNTs) using very low energy electrons (3-10 keV) in scanning electron microscopy (SEM). Current-induced breakdown caused by Joule heating has been achieved by applying suitably high voltages. The broken tubes were examined and exposed to electrons of 3-10 keV in situ in SEM with careful maneuvering of the electron beam at the broken site, which results in the mechanical joining of the tube. Electrical recovery of the same tube has been confirmed by performing the current-voltage measurements after joining. This easy approach is directly applicable for the repairing of carbon nanotubes incorporated in ready devices, such as in on-chip horizontal interconnects or on-tip probing applications, such as in scanning tunneling microscopy.

Measurement of local Si-nanowire growth kinetics using in situ transmission electron microscopy of heated cantilevers

A technique to study nanowire growth processes on locally heated microcantilevers in situ in a transmission electron microscope has been developed. The in situ observations allow the characterization of the nucleation process of silicon wires, as well as the measurement of growth rates of individual nanowires and the ability to observe the formation of nanowire bridges between separate cantilevers to form a complete nanowire device. How well the nanowires can be nucleated controllably on typical cantilever sidewalls is examined, and the measurements of nanowire growth rates are used to calibrate the cantilever-heater parameters used in finite-element models of cantilever heating profiles, useful for optimization of the design of devices requiring local growth.

Epitaxial integration of nanowires in microsystems by local micrometer-scale vapor-phase epitaxy

Free-standing epitaxially grown nanowires provide a controlled growth system and an optimal interface to the underlying substrate for advanced optical, electrical, and mechanical nanowire device connections. Nanowires can be grown by vapor-phase epitaxy (VPE) methods such as chemical vapor deposition (CVD) or metal organic VPE (MOVPE). However, VPE of semiconducting nanowires is not compatible with several microfabrication processes due to the high synthesis temperatures and issues such as cross-contamination interfering with the intended microsystem or the VPE process. By selectively heating a small microfabricated heater, growth of nanowires can be achieved locally without heating the entire microsystem, thereby reducing the compatibility problems. The first demonstration of epitaxial growth of silicon nanowires by this method is presented and shows that the microsystem can be used for rapid optimization of VPE conditions. The important issue of the cross-contamination of other parts of the microsystem caused by the local growth of nanowires is also investigated by growth of GaN near previously grown silicon nanowires. The design of the cantilever heaters makes it possible to study the grown nanowires with a transmission electron microscope without sample preparation.

On the suitability of carbon nanotube forests as non-stick surfaces for nanomanipulation

A carbon nanotube forest provides a unique non-stick surface for nanomanipulation, as the nanostructuring of the surface allows micro- and nanoscale objects to be easily removed after first being deposited via a liquid dispersion. A common problem for smooth surfaces is the strong initial stiction caused by adhesion forces after deposition onto the surface. In this work, carbon nanotube forests fabricated by plasma-enhanced chemical vapour deposition are compared to structures with a similar morphology, silicon nanograss, defined by anisotropic reactive ion-etching. While manipulation experiments with latex microbeads on structured as well as smooth surfaces (gold, silicon, silicon dioxide, Teflon, diamond-like carbon) showed a very low initial stiction for both carbon nanotube forests and silicon nanograss, a homogeneous distribution of particles was significantly easier to achieve on the carbon nanotube forests. Contact-angle measurements during gradual evaporation revealed that the silicon nanograss was superhydrophic with no contact-line pinning, while carbon nanotube forests in contrast showed strong contact-line pinning, as confirmed by environmental scanning electron microscopy of microdroplets. As a consequence, latex microbeads dispersed on the surface from an aqueous solution distributed evenly on carbon nanotube forests, but formed large agglomerates after evaporation on silicon nanograss. Lateral manipulation of latex microbeads with a microcantilever was found to be easier on carbon nanotube forests and silicon nanograss compared to smooth diamond-like carbon, due to a substantially lower initial stiction force on surfaces with nanoscale roughness. Nanomanipulation of bismuth nanowires, carbon nanotubes and organic nanofibres was demonstrated on carbon nanotube forests using a sharp tungsten tip. We find that the reason for the remarkable suitability of carbon nanotube forests as a non-stick surface for nanomanipulation is indeed the strong contact-line pinning in combination with the nanostructured surface, which allows homogeneous dispersion and easy manipulation of individual particles.

Electron irradiation-induced destruction of carbon nanotubes in electron microscopes

Observations of carbon nanotubes under exposure to electron beam irradiation in standard transmission electron microscope (TEM) and scanning electron microscope (SEM) systems show that such treatment in some cases can cause severe damage of the nanotube structure, even at electron energies far below the approximate 100 keV threshold for knock-on damage displacing carbon atoms in the graphene structure. We find that the damage we observe in one TEM can be avoided by use of a cold finger. This and the morphology of the damage imply that water vapour, which is present as a background gas in many vacuum chambers, can damage the nanotube structure through electron beam-induced chemical reactions. Though, the dependence on the background gas makes these observations specific for the presently used systems, the results demonstrate the importance of careful assessment of the level of subtle structural damage that the individual electron microscope system can do to nanostructures during standard use.

Batch fabrication of carbon nanotube bearings

Relative displacements between the atomically smooth, nested shells in multiwalled carbon nanotubes (MWNTs) can be used as a robust nanoscale motion enabling mechanism. Here, we report on a novel method suited for structuring large arrays of MWNTs into such nanobearings in a parallel fashion. By creating MWNT nanostructures with nearly identical electrical circuit resistance and heat transport conditions, uniform Joule heating across the array is used to simultaneously engineer the shell geometry via electric breakdown. The biasing approach used optimizes process metrics such as yield and cycle-time. We also present the parallel and piecewise shell engineering at different segments of a single nanotube to construct multiple, but independent, high density bearings. We anticipate this method for constructing electromechanical building blocks to be a fundamental unit process for manufacturing future nanoelectromechanical systems (NEMS) with sophisticated architectures and to drive several nanoscale transduction applications such as GHz-oscillators, shuttles, memories, syringes and actuators.

Shrinking a carbon nanotube

We report a method to controllably alter the diameter of an individual carbon nanotube. The combination of defect formation via electron irradiation and simultaneous resistive heating and electromigration in vacuum causes the nanotube to continuously transform into a high-quality nanotube of successively smaller diameter, as observed by transmission electron microscopy. The process can be halted at any diameter. Electronic transport measurements performed in situ reveal a striking dependence of conductance on nanotube geometry. As the diameter of the nanotube is reduced to near zero into the carbon chain regime, we observe negative differential resistance.