Carbon nanotube field effect transistors with suspended graphene gates

Ultralow power complementary inverter circuits using axially doped p- and n-channel Si nanowire field effect transistors

We have successfully synthesized axially doped p- and n-type regions on a single Si nanowire (NW). Diodes and complementary metal-oxide-semiconductor (CMOS) inverter devices using single axial p- and n-channel Si NW field-effect transistors (FETs) were fabricated. We show that the threshold voltages of both p- and n-channel Si NW FETs can be lowered to nearly zero by effectively controlling the doping concentration. Because of the high performance of the p- and n-type Si NW channel FETs, especially with regard to the low threshold voltage, the fabricated NW CMOS inverters have a low operating voltage (<3 V) while maintaining a high voltage gain (∼6) and ultralow static power dissipation (≤0.3 pW) at an input voltage of ±3 V. This result offers a viable way for the fabrication of a high-performance high-density logic circuit using a low-temperature fabrication process, which makes it suitable for flexible electronics.

Fabrication of fast mid-infrared range photodetector based on hybrid graphene-PbSe nanorods

Weak light absorption of graphene has limited the responsivity of graphene-based photodetectors. On the other hand, the slow response of PbSe as a mid-infrared range (MIR) detector makes this type of detector unsuitable as a commercial detector. Here, we report a fast MIR detector based on hybrid graphene-PbSe nanorods. For this purpose, a few-layer graphene piece was synthesized using a simple, scalable, and economical method on a cobalt layer, the synthesized graphene was transferred onto interdigitated copper electrodes, and then synthesized nanorods were spin coated on the transferred graphene. Strong and tunable light absorption in the quantum dot layer creates electric charges, which are transferred to the graphene, and due to the high charge mobility of graphene and long trapped-charge lifetimes in the quantum dot layer, they recirculate many times. The fabricated device has high speed and responsivity. The gain of fabricated detectors based on hybrid graphene quantum dots is 10.3 times more, their response time is 14.3 times faster, and their responsivity is 10 times more than conventional nanorod-based detectors. From the point of view of spectral selectivity, tuning the size of the nanorods helps optical detection from the IR to mid-IR.

Facile synthesis of high quality multi-walled carbon nanotubes on novel 3D KIT-6: application in high performance dye-sensitized solar cells

A novel hard templating strategy for the synthesis of high quality multi-walled carbon nanotubes (MWCNTs) with a uniform diameter was developed. MWCNTs were successfully synthesized through chemical vapour deposition (CVD) using acetylene by employing 3D bicontinuous mesoporous silica (KIT-6) as a hard template and used as the counter electrode in dye-sensitized solar cells (DSSCs). Here, we report that Ni-Cr-KIT-6 and Co-Cr-KIT-6 systems are the most suitable catalysts for the growth of MWCNTs. Raman spectroscopy and TEM analysis revealed that the synthesized MWCNTs were of high quality and well graphitized. Impressively, DSSCs with a MWCNT counter electrode demonstrated high power conversion efficiencies (PCEs) of up to 10.53%, which was significantly higher than that of 9.87% obtained for a DSSC with a conventional Pt counter electrode. Moreover, MWCNTs had a charge transfer resistance (Rct) of only 0.74 Ω cm(2) towards the I3(-)/I(-) electrolyte commonly applied in DSSCs, which is several orders of magnitude lower than that of a typical Pt electrode (2.78 Ω cm(2)). These results indicate that the synthesized MWCNT counter electrodes are versatile candidates that can increase the power conversion efficiency (PCE) of DSSCs.

High performance Si nanowire field-effect-transistors based on a CMOS inverter with tunable threshold voltage

We successfully fabricated nanowire-based complementary metal-oxide semiconductor (NWCMOS) inverter devices by utilizing n- and p-type Si nanowire field-effect-transistors (NWFETs) via a low-temperature fabrication processing technique. We demonstrate that NWCMOS inverter devices can be operated at less than 1 V, a significantly lower voltage than that of typical thin-film based complementary metal-oxide semiconductor (CMOS) inverter devices. This low-voltage operation was accomplished by controlling the threshold voltage of the n-type Si NWFETs through effective management of the nanowire (NW) doping concentration, while realizing high voltage gain (>10) and ultra-low static power dissipation (≤3 pW) for high-performance digital inverter devices. This result offers a viable means of fabricating high-performance, low-operation voltage, and high-density digital logic circuits using a low-temperature fabrication processing technique suitable for next-generation flexible electronics.

Three-terminal nanoelectromechanical field effect transistor with abrupt subthreshold slope

We report the first experimental demonstration of a three-terminal nanoelectromechanical field effect transistor (NEMFET) with measurable subthreshold slope as small as 6 mV/dec at room temperature and a switching voltage window of under 2 V. The device operates by modulating drain current through a suspended nanowire channel via an insulated gate electrode, thus eliminating the need for a conducting moving electrode, and yields devices that reliably switch on/off for up to 130 cycles. Radio-frequency measurements have confirmed operation at 125 MHz. Our measurements and simulations suggest that the NEMFET design is scalable toward sub-1 V ultrahigh-frequency operation for future low-power computing systems.

High performance amorphous ZnMgO/carbon nanotube composite thin-film transistors with a tunable threshold voltage

Here we report the fabrication and characterization of high mobility amorphous ZnMgO/single-walled carbon nanotube composite thin film transistors (TFTs) with a tunable threshold voltage. By controlling the ratio of MgO, ZnO and carbon nanotubes, high performance composite TFTs can be obtained with a field-effect mobility of up to 135 cm(2) V(-1) s(-1), a low threshold voltage of 1 V and a subthreshold swing as small as 200 mV per decade, making it a promising new solution-processed material for high performance functional circuits. A low voltage inverter is demonstrated with a functional frequency exceeding 5 kHz, which is only limited by parasitic capacitance rather than the intrinsic material speed. The overall device performance of the composite TFTs greatly surpasses not only that of the solution-processed TFTs, but also that of the conventional amorphous or polycrystalline silicon TFTs. It therefore has the potential to open up a new avenue to high-performance, solution-processed flexible electronics which could significantly impact the existing applications, and enable a whole new generation of flexible, wearable, or disposable electronics.

Determination of the bending rigidity of graphene via electrostatic actuation of buckled membranes

Classical continuum mechanics is used extensively to predict the properties of nanoscale materials such as graphene. The bending rigidity, κ, is an important parameter that is used, for example, to predict the performance of graphene nanoelectromechanical devices and also ripple formation. Despite its importance, there is a large spread in the theoretical predictions of κ for few-layer graphene. We have used the snap-through behavior of convex buckled graphene membranes under the application of electrostatic pressure to determine experimentally values of κ for double-layer graphene membranes. We demonstrate how to prepare convex-buckled suspended graphene ribbons and fully clamped suspended membranes and show how the determination of the curvature of the membranes and the critical snap-through voltage, using AFM, allows us to extract κ. The bending rigidity of bilayer graphene membranes under ambient conditions was determined to be 35.5−15.0 +20.0 eV. Monolayers are shown to have significantly lower κ than bilayers.