Ultrafast spectroscopy of quantum confined states in a single CdSe nanowire

Photon Recycling in Semiconductor Thin Films and Devices

Photon recycling (PR) plays an important role in the study of semiconductor materials and impacts the properties of their optoelectronic applications. However, PR has not been investigated comprehensively and it has not been demonstrated experimentally in many different kinds of semiconductor materials and devices. In this review paper, first, the authors introduce the background of PR and describe how this phenomenon was originally identified in semiconductors. Then, the theory and modelling of PR is reviewed and some of the important parameters that are used to quantify PR are highlighted. Next, a variety of the methods used to achieve and characterize PR in materials and devices are discussed. Examples of how the performance parameters of different types of optoelectronic devices are affected by PR are described. Finally, a summary of the roles of PR in semiconductor materials and devices and an outlook on how PR can be used to solve existing problems and challenges in the field of optoelectronics are provided. From this review, it is apparent that PR can have a positive impact on optoelectronic device performance, and that further in-depth theoretical and experimental studies are needed to rigorously demonstrate the advantages and importance of PR.

Ultra-long distance carrier transportation in bandgap-graded CdSxSe1-x nanowire waveguides

Carrier transportation in semiconductor nanowires is essential for their application in integrated opto-electronic devices. Therefore, it is of importance to manipulate and enhance the transportation performance of nanowires through micro-nano scale engineering. In this work, the carrier dynamics of the waveguides in the bandgap-graded CdSxSe1-x nanowires is systematically investigated. By developing a spatially separated time-resolved photoluminescence spectroscopy system, the dependence between the propagation distance/direction and the dynamics of the bandgap gradient driven long-range carrier transportation of the nanowires is characterized. In the meantime, the dynamics of carrier concentration driven spontaneous diffusion is also characterized to be compared to. It is found that the continuous carrier transportation which is driven by the bandgap gradient is the dominant process in the active waveguide, where the maximum transportation distance of 100 μm is detected. Such a transportation distance is up to ∼8-fold larger than the spontaneous carrier diffusion distance in the bandgap-graded CdSxSe1-x nanowires. The ultra-long carrier transportation capability in the bandgap gradient nanowires makes them ideal structures for applications in long-distance photo-energy delivery and micro-nanoscale opto-electronics.

Ultrafast measurements of the dynamics of single nanostructures: a review

The ability to study single particles has revolutionized nanoscience. The advantage of single particle spectroscopy measurements compared to conventional ensemble studies is that they remove averaging effects from the different sizes and shapes that are present in the samples. In time-resolved experiments this is important for unraveling homogeneous and inhomogeneous broadening effects in lifetime measurements. In this report, recent progress in the development of ultrafast time-resolved spectroscopic techniques for interrogating single nanostructures will be discussed. The techniques include far-field experiments that utilize high numerical aperture (NA) microscope objectives, near-field scanning optical microscopy (NSOM) measurements, ultrafast electron microscopy (UEM), and time-resolved x-ray diffraction experiments. Examples will be given of the application of these techniques to studying energy relaxation processes in nanoparticles, and the motion of plasmons, excitons and/or charge carriers in different types of nanostructures.

Atomically thin cesium lead bromide perovskite quantum wires with high luminescence

We report a room-temperature colloidal synthesis of few-unit-cell-thick CsPbBr₃ QWs with lengths over a hundred nanometers. The surfactant-directed oriented attachment growth mechanism was proposed to explain the formation of such CsPbBr₃ QWs. Owing to the strong quantum confinement effect, the photoluminescence (PL) emission peak of few-unit-cell-thick CsPbBr₃ QWs blue-shifted to 430 nm. The ensemble PL quantum yield (PLQY) of the few-unit-cell-thick CsPbBr₃ QWs increased to 21.13% through a simple heat-treatment process. The improvement of PLQY was ascribed to the reduction of the density of surface trap states and defect states induced by the heat-treatment process. Notably, the dependence of the bandgap on the diameter with different numbers of unit cells was presented for the first time in 1-D CsPbBr₃ QWs on the basis of the produced few-unit-cell-thick CsPbBr₃ QWs.

Femtosecond Pump-Probe Microspectroscopy of Single Perylene Nanoparticles

We have developed a femtosecond pump-probe light scattering microspectroscopic system in which the output of a femtosecond Ti:sapphire oscillator (1 W, 82 MHz) was used as a light source; the pump light is the second harmonics (395 nm) of the laser output, and the probe light is a femtosecond white-light continuum (490-900 nm) generated with a photonic crystal fiber. Detection of the backscattered light from single nanoparticle on a glass substrate allowed us to obtain higher gain of the transient signals by ∼20 times in comparison with the conventional transmittance-mode experiment. This high-sensitivity of the backscattering detection makes it possible to examine ultrafast relaxation dynamics of excited states in organic nanoparticles, which, in general, are lower photodurability than the inorganic one. We applied the system to single nanocrystals of α-form perylene and then succeeded in direct observation of the excimer formation dynamics on a picosecond time scale. Single nanoparticle measurements for the perylene nanocrystals having a size range of 100 to 500 nm suggested that the excimer formation time became short from 2 ps to <0.3 ps for decreasing of the size.

Imaging nano-objects by linear and nonlinear optical absorption microscopies

Absorption based microscopy measurements are emerging as important tools for studying nanomaterials. This review discusses the three most common techniques for performing these experiments: transient absorption microscopy, photothermal heterodyne imaging, and spatial modulation spectroscopy. The focus is on the application of these techniques to imaging and detection, using examples taken from the authors' laboratory. The advantages and disadvantages of the three methods are discussed, with an emphasis on the unique information that can be obtained from these experiments, in comparison to conventional emission or scattering based microscopy experiments.

Ultrathin inorganic molecular nanowire based on polyoxometalates

The development of metal oxide-based molecular wires is important for fundamental research and potential practical applications. However, examples of these materials are rare. Here we report an all-inorganic transition metal oxide molecular wire prepared by disassembly of larger crystals. The wires are comprised of molybdenum(VI) with either tellurium(IV) or selenium(IV): {(NH4)2[XMo6O21]}n (X=tellurium(IV) or selenium(IV)). The ultrathin molecular nanowires with widths of 1.2 nm grow to micrometre-scale crystals and are characterized by single-crystal X-ray analysis, Rietveld analysis, scanning electron microscopy, X-ray photoelectron spectroscopy, ultraviolet-visible spectroscopy, thermal analysis and elemental analysis. The crystals can be disassembled into individual molecular wires through cation exchange and subsequent ultrasound treatment, as visualized by atomic force microscopy and transmission electron microscopy. The ultrathin molecular wire-based material exhibits high activity as an acid catalyst, and the band gap of the molecular wire-based crystal is tunable by heat treatment.

Imaging charge separation and carrier recombination in nanowire p-i-n junctions using ultrafast microscopy

Silicon nanowires incorporating p-type/n-type (p-n) junctions have been introduced as basic building blocks for future nanoscale electronic components. Controlling charge flow through these doped nanostructures is central to their function, yet our understanding of this process is inferred from measurements that average over entire structures or integrate over long times. Here, we have used femtosecond pump-probe microscopy to directly image the dynamics of photogenerated charge carriers in silicon nanowires encoded with p-n junctions along the growth axis. Initially, motion is dictated by carrier-carrier interactions, resulting in diffusive spreading of the neutral electron-hole cloud. Charge separation occurs at longer times as the carrier distribution reaches the edges of the depletion region, leading to a persistent electron population in the n-type region. Time-resolved visualization of the carrier dynamics yields clear, direct information on fundamental drift, diffusion, and recombination processes in these systems, providing a powerful tool for understanding and improving materials for nanotechnology.