Studies of hot photoluminescence in plasmonically coupled silicon via variable energy excitation and temperature-dependent spectroscopy

Toward a New Era of SERS and TERS at the Nanometer Scale: From Fundamentals to Innovative Applications

Surface-enhanced Raman scattering (SERS) and tip-enhanced Raman scattering (TERS) have opened a variety of exciting research fields. However, although a vast number of applications have been proposed since the two techniques were first reported, none has been applied to real practical use. This calls for an update in the recent fundamental and application studies of SERS and TERS. Thus, the goals and scope of this review are to report new directions and perspectives of SERS and TERS, mainly from the viewpoint of combining their mechanism and application studies. Regarding the recent progress in SERS and TERS, this review discusses four main topics: (1) nanometer to subnanometer plasmonic hotspots for SERS; (2) Ångström resolved TERS; (3) chemical mechanisms, i.e., charge-transfer mechanism of SERS and semiconductor-enhanced Raman scattering; and (4) the creation of a strong bridge between the mechanism studies and applications.

Visible upconversion luminescence of doped bulk silicon for a multimodal wafer metrology

We report the experimental observation of the UV-visible upconverted luminescence of bulk silicon under pulsed infrared excitation. We demonstrate that non-stationary distribution of excited carriers leads to the emission at spectral bands never to our knowledge observed before. We show that the doping type and concentration alter the shape of luminescence spectra. Silicon nanoparticles have a size between quantum-confined and Mie-type limits (10-100 nm) yet show increased luminescence intensity when placed atop a silicon wafer. The findings demonstrate that upconversion luminescence can become a powerful tool for nearest future silicon wafer inspection systems as a multimodal technique of measuring the several parameters of the wafer simultaneously.

Cavity Engineering of Photon-Phonon Interactions in Si Nanocavities

The ever-increasing demand for faster, smaller, and energy-efficient devices has pushed the frontiers of research toward silicon photonics to meet the challenges for fabricating the next generation of computing systems. In order to design new devices at the nanoscale, it is important to understand and be able to control material properties, which may differ significantly from their bulk counterparts. Here, we demonstrate very large tunability of phonon-photon interactions in Si nanowire cavities by engineering the cavity mode at the emission wavelength. Raman scattering measurements performed to quantify these interactions reveal that the anti-Stokes to Stokes scattering ratio can vary from 0.035 to 0.405 in Si nanowires compared to a value of 0.1 for bulk Si, demonstrating tunability by over an order of magnitude. Moreover, a ratio of 0.85 was attained at a temperature of 580 K, which is the highest value ever reported for Si. Cavity modes that can be easily changed by changing the nanowire diameter, cavity geometry, or excitation wavelength provide efficient ways of tuning these interactions. Nanocavity engineering offers a new approach for tuning phonon-photon interactions in silicon and opens up new avenues of research and applications in the fields of silicon photonics, Raman lasers, telecommunication, and optical cooling.

Nanocavity-Enhanced Giant Stimulated Raman Scattering in Si Nanowires in the Visible Light Region

Silicon photonics has been a very active area of research especially in the past two decades in order to meet the ever-increasing demand for more computational power and faster device speeds and their natural compatibility with complementary metal-oxide semiconductor. In order to develop Si as a useful photonics material, essential photonic components such as light sources, waveguides, wavelength convertors, modulators, and detectors need to be developed and integrated. However, due to the indirect electronic bandgap of Si, conventional light emission devices such as light-emitting diodes and lasers cannot be built. Therefore, there has been considerable interest in developing Si-based Raman lasers, which are nonlinear devices and require large stimulated Raman scattering (SRS) in an optical cavity. However, due to the low quantum yield of SRS in Si, Raman lasers have very large device footprints and high lasing threshold, making them unsuitable for faster, smaller, and energy-efficient devices. Here, we report strong SRS and extremely high Raman gain in Si nanowire optical cavities in the visible region with measured SRS threshold as low as 30 kW/cm². At cavity mode resonance, light is confined into a low mode volume and high intensity electromagnetic mode inside the Si nanowire due to its high refractive index, which leads to strong SRS at low pump intensities. Electromagnetic calculations reveal greater than 6 orders of magnitude increase in Raman gain coefficient at 532 nm pump wavelength, compared to the gain value at 1.55 μm wavelength reported in literature, despite the 10⁸ higher losses at 532 nm. Because of the high gain in such small structures, we believe that this is a significant first step in realizing a monolithically integrable nanoscale low-powered Si Raman laser.

Tuning Electroluminescence from a Plasmonic Cavity-Coupled Silicon Light Source

The combination of Moore's law and Dennard's scaling rules have constituted the fundamental guidelines for the silicon-based semiconductor industry for decades. Furthermore, the enormous growth of global data volume has pushed the demand for complex and densely packed devices. In recent years, it has become clear that wired interconnects impose increasingly severe speed and power limitations onto integrated circuits as scaling slows toward a halt. To overcome these limitations, there is a clear need for optical data processing. Despite significant progress in the development of silicon photonics, light sources remain challenging owing to the indirect bandgap of group IV materials. It is therefore highly desirable to develop new concepts for a silicon light source that meets efficiency and footprint requirements similar to their electronic counterparts. Here, we demonstrate an electrically driven and tunable silicon light source by matching the resonant modes of a silver nanocavity with the hot luminescence spectrum of an avalanching p-n junction. The cavity significantly enhances phonon-assisted recombination of hot carriers by tailoring the local density of states at the size-tunable resonance. Such tunable nanoscale emitter may be of great interest for short-reach communications, microdisplays or lab-on-chip applications.

Efficient Upper-Excited State Fluorescence in an Organic Hyperbolic Metamaterial

Upper-excited state emission is not usually observed from molecules owing to competition with much faster nonradiative relaxation pathways; however, it can be made more efficient by modifying the photonic density of states to enhance the radiative decay rate. Here, we show that embedding the small molecule zinc tetraphenylporphyrin (ZnTPP) in a hyperbolic metamaterial enables an ∼18-fold increase in fluorescence intensity from the second singlet excited state ( S₂) relative to that from the lowest singlet excited state ( S₁). By varying the number of periods in the HMM stack, we are able to systematically tune the ZnTPP fluorescence spectrum from red (dominated by emission from S₁) to blue (dominated by emission from S₂) with an instrument-limited decay lifetime <10 ps. Our results are consistent with a broadband Purcell enhancement in the radiative rate of both transitions predicted via transfer matrix modeling and point to a general opportunity to harness upper-excited states for spectrally tunable, ultrafast fluorescence via radiative decay engineering.

Flexible Light Emission Diode Arrays Made of Transferred Si Microwires-ZnO Nanofilm with Piezo-Phototronic Effect Enhanced Lighting

Due to the fragility and the poor optoelectronic performances of Si, it is challenging and exciting to fabricate the Si-based flexible light-emitting diode (LED) array devices. Here, a flexible LED array device made of Si microwires-ZnO nanofilm, with the advantages of flexibility, stability, lightweight, and energy savings, is fabricated and can be used as a strain sensor to demonstrate the two-dimensional pressure distribution. Based on piezo-phototronic effect, the intensity of the flexible LED array can be increased more than 3 times (under 60 MPa compressive strains). Additionally, the device is stable and energy saving. The flexible device can still work well after 1000 bending cycles or 6 months placed in the atmosphere, and the power supplied to the flexible LED array is only 8% of the power of the surface-contact LED. The promising Si-based flexible device has wide range application and may revolutionize the technologies of flexible screens, touchpad technology, and smart skin.

Multiband Hot Photoluminescence from Nanocavity-Embedded Silicon Nanowire Arrays with Tunable Wavelength

Besides the well-known quantum confinement effect, hot luminescence from indirect bandgap Si provides a new and promising approach to realize monolithically integrated silicon optoelectronics due to phonon-assisted light emission. In this work, multiband hot photoluminescence is generated from Si nanowire arrays by introducing trapezoid-shaped nanocavities that support hybrid photonic-plasmonic modes. By continuously adjusting the geometric parameters of the Si nanowires with trapezoidal nanocavities, the multiband hot photoluminescence can be tuned in the range from visible to near-infrared independent of the excitation laser wavelength. The highly tunable wavelength bands and concomitant compatibility with Si-integrated electronics enable tailoring of silicon-based light sources suitable for next-generation optoelectronics devices.

Engineering Localized Surface Plasmon Interactions in Gold by Silicon Nanowire for Enhanced Heating and Photocatalysis

The field of plasmonics has attracted considerable attention in recent years because of potential applications in various fields such as nanophotonics, photovoltaics, energy conversion, catalysis, and therapeutics. It is becoming increasing clear that intrinsic high losses associated with plasmons can be utilized to create new device concepts to harvest the generated heat. It is therefore important to design cavities, which can harvest optical excitations efficiently to generate heat. We report a highly engineered nanowire cavity, which utilizes a high dielectric silicon core with a thin plasmonic film (Au) to create an effective metallic cavity to strongly confine light, which when coupled with localized surface plasmons in the nanoparticles of the thin metal film produces exceptionally high temperatures upon laser irradiation. Raman spectroscopy of the silicon core enables precise measurements of the cavity temperature, which can reach values as high as 1000 K. The same Si-Au cavity with enhanced plasmonic activity when coupled with TiO₂ nanorods increases the hydrogen production rate by ∼40% compared to similar Au-TiO₂ system without Si core, in ethanol photoreforming reactions. These highly engineered thermoplasmonic devices, which integrate three different cavity concepts (high refractive index core, metallo-dielectric cavity, and localized surface plasmons) along with the ease of fabrication demonstrate a possible pathway for designing optimized plasmonic devices with applications in energy conversion and catalysis.

Tailoring the Spectroscopic Properties of Semiconductor Nanowires via Surface-Plasmon-Based Optical Engineering

Semiconductor nanowires, due to their unique electronic, optical, and chemical properties, are firmly placed at the forefront of nanotechnology research. The rich physics of semiconductor nanowire optics arises due to the enhanced light-matter interactions at the nanoscale and coupling of optical modes to electronic resonances. Furthermore, confinement of light can be taken to new extremes via coupling to the surface plasmon modes of metal nanostructures integrated with nanowires, leading to interesting physical phenomena. This Perspective will examine how the optical properties of semiconductor nanowires can be altered via their integration with highly confined plasmonic nanocavities that have resulted in properties such as orders of magnitude faster and more efficient light emission and lasing. The use of plasmonic nanocavities for tailored optical absorption will also be discussed in order to understand and engineer fundamental optical properties of these hybrid systems along with their potential for novel applications, which may not be possible with purely dielectric cavities.