Two-terminal nanoelectromechanical devices based on germanium nanowires

Anion Photoelectron Spectroscopy and Theoretical Studies of Ge3n+1O (n = 1-3) Clusters with the C3v Symmetric Ge3 Structural Unit

We investigate Ge3n+1O-/0 (n = 1-3) clusters using anion photoelectron spectroscopy and theoretical calculations. The results show that the lowest energy structure of Ge4O- is a bent Cs symmetric trigonal bipyramidal structure, while Ge4O has a C3v symmetric trigonal bipyramidal structure. Ge7O- has two coexisting low-lying isomers, the first one can be viewed as a Ge2O unit interacting with a Ge5 trigonal bipyramid, the second one can be regarded as an O atom interacting with a Ge7 pentagonal bipyramid; whereas Ge7O has a C3v symmetric structure with a Ge atom and an O atom capping a Ge6 trigonal antiprism from the bottom and top, respectively. The structures of Ge10O- and Ge10O can be obtained by adding an O atom to different binding sites of a C3v symmetric Ge10. Chemical bonding analyses of Ge3n+1O (n = 1-3) reveal that the O atom interacts with its neighboring three Ge atoms forming one 4c-2e σ bond and two 4c-2e π bonds in the top Ge3O trigonal pyramid, while the terminal Ge atom forms one 4c-2e σ bond in the bottom Ge4 trigonal pyramid. The large HOMO-LUMO gaps of Ge3n+1O (n = 1-3) indicate that they have good stabilities. Ab initio molecular dynamics simulations suggest that both Ge7O and Ge10O are dynamically stable in general at 300 and 500 K. The current work suggests that the C3v symmetric Ge3 units and the insertion growth pattern may be viable for constructing 1D germanium oxide nanostructures with the chemical formula of Ge3n+1O.

Adhesion of 2D MoS2 to Graphite and Metal Substrates Measured by a Blister Test

Using a blister test, we measured the work of separation between MoS₂ membranes from metal, semiconductor, and graphite substrates. We found a work of separation ranging from 0.11 ± 0.05 J/m² for chromium to 0.39 ± 0.1 J/m² for graphite substrates. In addition, we measured the work of adhesion of MoS₂ membranes over these substrates and observed a dramatic difference between the work of separation and adhesion, which we attribute to adhesion hysteresis. Due to the prominent role that adhesive forces play in the fabrication and functionality of devices made from 2D materials, an experimental determination of the work of separation and adhesion as provided here will help guide their development.

Fabrication and Characterization of Double- and Single-Clamped CuO Nanowire Based Nanoelectromechanical Switches

Electrostatically actuated nanoelectromechanical (NEM) switches hold promise for operation with sharply defined ON/OFF states, high ON/OFF current ratio, low OFF state power consumption, and a compact design. The present challenge for the development of nanoelectromechanical system (NEMS) technology is fabrication of single nanowire based NEM switches. In this work, we demonstrate the first application of CuO nanowires as NEM switch active elements. We develop bottom-up and top-down approaches for NEM switch fabrication, such as CuO nanowire synthesis, lithography, etching, dielectrophoretic alignment of nanowires on electrodes, and nanomanipulations for building devices that are suitable for scalable production. Theoretical modelling finds the device geometry that is necessary for volatile switching. The modelling results are validated by constructing gateless double-clamped and single-clamped devices on-chip that show robust and repeatable switching. The proposed design and fabrication route enable the scalable integration of bottom-up synthesized nanowires in NEMS.

Resonance assisted jump-in voltage reduction for electrostatically actuated nanobeam-based gateless NEM switches

Electrostatically actuated nanobeam-based electromechanical switches have shown promise for versatile novel applications, such as low power devices. However, their widespread use is restricted due to poor reliability resulting from high jump-in voltages. This article reports a new method for lowering the jump-in voltage by inducing mechanical oscillations in the active element during the switching ON process, reducing the jump-in voltage by more than three times. Ge_0.91Sn_0.09 alloy and Bi₂Se₃ nanowire-based nanoelectromechanical switches were constructed in situ to demonstrate the operation principles and advantages of the proposed method.

Investigating the mechanical properties of GeSn nanowires

Germanium tin (GeSn) has been proposed as a promising material for electronic and optical applications due to the formation of a direct band-gap at a Sn content >7 at%. Furthermore, the ability to manipulate the properties of GeSn at the nanoscale will further permit the realisation of advanced mechanical devices. Here we report for the first time the mechanical properties of GeSn nanowires (7.1-9.7 at% Sn) and assess their suitability as nanoelectromechanical (NEM) switches. Electron microscopy analysis showed the nanowires to be single crystalline, with surfaces covered by a thin native amorphous oxide layer. Mechanical resonance and bending tests at different boundary conditions were used to obtain size-dependent Young's moduli and to relate the mechanical characteristics of the alloy nanowires to geometry and Sn incorporation. The mechanical properties of the GeSn nanowires make them highly promising for applications in next generation NEM devices.

Low-friction nanojoint prototype

High surface energy of individual nanostructures leads to high adhesion and static friction that can completely hinder the operation of nanoscale systems with movable parts. For instance, silver or gold nanowires cannot be moved on silicon substrate without plastic deformation. In this paper, we experimentally demonstrate an operational prototype of a low-friction nanojoint. The movable part of the prototype is made either from a gold or silver nano-pin produced by laser-induced partial melting of silver and gold nanowires resulting in the formation of rounded bulbs on their ends. The nano-pin is then manipulated into the inverted pyramid (i-pyramids) specially etched in a Si wafer. Due to the small contact area, the nano-pin can be repeatedly tilted inside an i-pyramid as a rigid object without noticeable deformation. At the same time in the absence of external force the nanojoint is stable and preserves its position and tilt angle. Experiments are performed inside a scanning electron microscope and are supported by finite element method simulations.

Review: Electrostatically actuated nanobeam-based nanoelectromechanical switches - materials solutions and operational conditions

This review summarizes relevant research in the field of electrostatically actuated nanobeam-based nanoelectromechanical (NEM) switches. The main switch architectures and structural elements are briefly described and compared. Investigation methods that allow for exploring coupled electromechanical interactions as well as studies of mechanically or electrically induced effects are covered. An examination of the complex nanocontact behaviour during various stages of the switching cycle is provided. The choice of the switching element and the electrode is addressed from the materials perspective, detailing the benefits and drawbacks for each. An overview of experimentally demonstrated NEM switching devices is provided, and together with their operational parameters, the reliability issues and impact of the operating environment are discussed. Finally, the most common NEM switch failure modes and the physical mechanisms behind them are reviewed and solutions proposed.

Role of Nanoelectromechanical Switching in the Operation of Nanostructured Bi2Se3 Interlayers between Conductive Electrodes

We demonstrate a simple low-cost method of preparation of layered devices for opto- and thermoelectric applications. The devices consist of a functional Bi2Se3 layer of randomly oriented nanoplates and flexible nanobelts enclosed between two flat indium tin oxide (ITO) electrodes. The number of functional interconnections between the ITO electrodes and correspondingly the efficiency of the device can be increased by gradual nanoelectromechanical (NEM) switching of flexible individual Bi2Se3 nanobelts in the circuit. NEM switching is achieved through applying an external voltage to the device. For the first time, we investigate in situ NEM switching and breakdown parameters of Bi2Se3 nanobelts, visualize the processes occurring in the device under the influence of applied external voltage, and establish the limitations to the possible operational conditions.

Vertical, capacitive microelectromechanical switches produced via direct writing of copper wires

Three-dimensional (3D) direct writing based on the meniscus-confined electrodeposition of copper metal wires was used in this study to develop vertical capacitive microelectromechanical switches. Vertical microelectromechanical switches reduce the form factor and increase the area density of such devices in integrated circuits. We studied the electromechanical characteristics of such vertical switches by exploring the dependence of switching voltage on various device structures, particularly with regard to the length, wire diameter, and the distance between the two wires. A simple model was found to match the experimental measurements made in this study. We found that the electrodeposited copper microwires exhibit a good elastic modulus close to that of bulk copper. By optimizing the 3D structure of the electrodes, a volatile electromechanical switch with a sub-5 V switching voltage was demonstrated in a vertical microscale switch with a gap distance as small as 100 nm created with a pair of copper wires with diameters of ~1 μm and heights of 25 μm. This study establishes an innovative approach to construct microelectromechanical systems with arbitrary 3D microwire structures for various applications, including the demonstrated volatile and nonvolatile microswitches.

Electric current induced modification of germanium nanowire NEM switch contact

We present an investigation of contact properties of a germanium (Ge) nanowire based nanoelectromechanical (NEM) switch in its ON state. The contact stiffness in the ON state was evaluated by detecting the nanowire's resonance frequency. It was found that the resonance frequency increases when electric current flows through the nanowire/counter electrode contact area. The reason for modification in the contact area is referred to as electric-current-induced processes in the native oxide layer covering the nanowires. The presented resonance shift method is a simple way to indicate strengthening of the nanowire/counter electrode contact area without disassembling the contact.

In-situ observations of nanoscale effects in germanium nanowire growth with ternary eutectic alloys

Vapour-liquid-solid (VLS) techniques are popular routes for the scalable synthesis of semiconductor nanowires. In this article, in-situ electron microscopy is used to correlate the equilibrium content of ternary (Au0.75 Ag0.25 -Ge and Au0.65 Ag0.35 -Ge) metastable alloys with the kinetics, thermodynamics and diameter of Ge nanowires grown via a VLS mechanism. The shape and geometry of the heterogeneous interfaces between the liquid eutectic and solid Ge nanowires varies as a function of nanowire diameter and eutectic alloy composition. The behaviour of the faceted heterogeneous liquid-solid interface correlates with the growth kinetics of the nanowires, where the main growth facet at the solid nanowire-liquid catalyst drop contact line lengthens for faster nanowire growth kinetics. Pronounced diameter dependent growth kinetics, as inferred from liquid-solid interfacial behaviour, is apparent for the synthesised nanowires. Direct in-situ microscopy observations facilitates the comparison between the nanowire growth behaviour from ternary (Au-Ag-Ge) and binary (Au-Ge) eutectic systems.

Triple phase boundary induced self-catalyzed growth of Ge–graphite core–shell nanowires: field electron emission and surface wettability

Ge–graphite core–shell nanowires with good field electron emission capability and surface superhydrophobicity were synthesized by triple phase boundary-induced self-catalyzed growth.

Mesoporous nanobelts and nano-necklaces of Co3O4 converted from β-Co(OH)2 nanobelts via a thermal decomposition route for the electrocatalytic oxidation of H2O2

A direct and scalable approach, based upon a thermal decomposition route under normal atmospheric pressure via a precursor-induced mechanism, was developed for growing well-defined mesoporous Co₃O₄ nanobelts and nano-necklaces from β-Co(OH)₂ nanobelts.

One-dimensional nano-interconnection formation

Interconnection of one-dimensional nanomaterials such as nanowires and carbon nanotubes with other parts or components is crucial for nanodevices to realize electrical contacts and mechanical fixings. Interconnection has been being gradually paid great attention since it is as significant as nanomaterials properties, and determines nanodevices performance in some cases. This paper provides an overview of recent progress on techniques that are commonly used for one-dimensional interconnection formation. In this review, these techniques could be categorized into two different types: two-step and one-step methods according to their established process. The two-step method is constituted by assembly and pinning processes, while the one-step method is a direct formation process of nano-interconnections. In both methods, the electrodeposition approach is illustrated in detail, and its potential mechanism is emphasized.

In Situ Real-Time TEM Reveals Growth, Transformation and Function in One-Dimensional Nanoscale Materials: From a Nanotechnology Perspective

This paper summarises recent developments in in situ TEM instrumentation and operation conditions. The focus of the discussion is on demonstrating how improved understanding of fundamental physical phenomena associated with nanowire or nanotube materials, revealed by following transformations in real time and high resolution, can assist the engineering of emerging electronic and optoelectronic devices. Special attention is given to Si, Ge, and compound semiconductor nanowires and carbon nanotubes (CNTs) as one of the most promising building blocks for devices inspired by nanotechnology.

A mobile Sn nanowire inside a β-Ga2 O3 tube: a practical nanoscale electrically/thermally driven switch

Nanoelectromechanical system switches are seen as key devices for fast switching in communication networks since they can be switched between transmitting and receiving states with an electrostatic command. Herein, the fabrication of practical, nanoscale electrically/thermally driven switches is reported based on a mobile Sn nanowire inside a β-Ga2 O3 tube. The melting point of Sn inside the Ga2 O3 tube is found to be as low as 58 °C-far below the value of bulk Sn (231.89 °C)-and its crystal phase (β-Sn) remains unchanged even at temperatures as low as -170 °C. Thus a miniaturization of the unique wide-temperature-range thermometer based on the linear thermal expansion of liquid Sn fillings in the Ga2 O3 tube is realized. In addition, the electrical properties of the Sn-nanowire-filled β-Ga2 O3 tubes are carefully determined: importantly, the resistance demonstrates a sudden drop (rise) when two Sn nanowires contact (separate), due to the thermally driven motion of the liquid Sn fillings inside the tube. Thus this structure can be switched between its on and off states by controlling the motion, merging or splitting, of the Sn nanowires inside the tube, either electrically, by applying a current, or thermally, at a predetermined temperature.

Picoscale science and nanoscale engineering by electron microscopy

A future scanning/transmission electron microscope is proposed to be a comprehensive machine that is capable of providing picoseconds time-resolved information at sub-nanometer scale and even at picometer scale, spatial resolution. At the same time, physical and chemical properties can be measured in situ from a region as small as a few nanometers by introducing local electric, mechanical, thermal, magnetic and/or optical stimulations/excitations under vacuum or even in a quasi-ambient environment. It is anticipated that nanoscopy and picoscopy will be key tools for studying picoscale science and developing nanoscale technology related to materials science, biology, physics and chemistry.

One-dimensional germanium nanostructures--formation and their electron field emission properties

Ge nanostructures were synthesized by reduction of GeO(2) in H(2) atmosphere at various temperatures. Entangled and straight Ge nanowires with oxide shells were grown at high temperatures. Ge nanowires with various numbers of nodules were obtained at low temperatures. Ge nanowires without nodules exhibited remarkable field emission properties with a turn-on field of 4.6 V µm(-1) and field enhancement factor of 1242.

Low voltage nanoelectromechanical switches based on silicon carbide nanowires

We report experimental demonstrations of electrostatically actuated, contact-mode nanoelectromechanical switches based on very thin silicon carbide (SiC) nanowires (NWs). These NWs are lithographically patterned from a 50 nm thick SiC layer heteroepitaxially grown on single-crystal silicon (Si). Several generic designs of in-plane electrostatic SiC NW switches have been realized, with NW widths as small as approximately 20 nm and lateral switching gaps as narrow as approximately 10 nm. Very low switch-on voltages are obtained, from a few volts down to approximately 1 V level. Two-terminal, contact-mode "hot" switching with high on/off ratios (>10(2) or 10(3)) has been demonstrated repeatedly for many devices. We find enhanced switching performance in bare SiC NWs, with lifetimes exceeding those based on metallized SiC NWs.

In situ characterization of vertically oriented carbon nanofibers for three-dimensional nano-electro-mechanical device applications

We have performed mechanical and electrical characterization of individual as-grown, vertically oriented carbon nanofibers (CNFs) using in situ techniques, where such high-aspect-ratio, nanoscale structures are of interest for three-dimensional (3D) electronics, in particular 3D nano-electro-mechanical-systems (NEMS). Nanoindentation and uniaxial compression tests conducted in an in situ nanomechanical instrument, SEMentor, suggest that the CNFs undergo severe bending prior to fracture, which always occurs close to the bottom rather than at the substrate-tube interface, suggesting that the CNFs are well adhered to the substrate. This is also consistent with bending tests on individual tubes which indicated that bending angles as large as approximately 70 degrees could be accommodated elastically. In situ electrical transport measurements revealed that the CNFs grown on refractory metallic nitride buffer layers were conducting via the sidewalls, whereas those synthesized directly on Si were electrically unsuitable for low-voltage dc NEMS applications. Electrostatic actuation was also demonstrated with a nanoprobe in close proximity to a single CNF and suggests that such structures are attractive for nonvolatile memory applications. Since the magnitude of the actuation voltage is intimately dictated by the physical characteristics of the CNFs, such as diameter and length, we also addressed the ability to tune these parameters, to some extent, by adjusting the plasma-enhanced chemical vapor deposition growth parameters with this bottom-up synthesis approach.

Application of nanomaterials in two-terminal resistive-switching memory devices

Nanometer materials have been attracting strong attention due to their interesting structure and properties. Many important practical applications have been demonstrated for nanometer materials based on their unique properties. This article provides a review on the fabrication, electrical characterization, and memory application of two-terminal resistive-switching devices using nanomaterials as the active components, including metal and semiconductor nanoparticles (NPs), nanotubes, nanowires, and graphenes. There are mainly two types of device architectures for the two-terminal devices with NPs. One has a triple-layer structure with a metal film sandwiched between two organic semiconductor layers, and the other has a single polymer film blended with NPs. These devices can be electrically switched between two states with significant different resistances, i.e. the ‘ON’ and ‘OFF’ states. These render the devices important application as two-terminal non-volatile memory devices. The electrical behavior of these devices can be affected by the materials in the active layer and the electrodes. Though the mechanism for the electrical switches has been in argument, it is generally believed that the resistive switches are related to charge storage on the NPs. Resistive switches were also observed on crossbars formed by nanotubes, nanowires, and graphene ribbons. The resistive switches are due to nanoelectromechanical behavior of the materials. The Coulombic interaction of transient charges on the nanomaterials affects the configurable gap of the crossbars, which results into significant change in current through the crossbars. These nanoelectromechanical devices can be used as fast-response and high-density memory devices as well.

Two-terminal nanoelectromechanical bistable switches based on molybdenum-sulfur-iodine molecular wire bundles

We demonstrate the application of Mo(6)S(3)I(6) molecular wire bundles for electrically controllable two-terminal on-off switches. We investigate how changes in the contact electrode material and geometry influence the device characteristics, hysteretic switching behavior and device stability. We also determine the device operating parameters, particularly the Young's moduli (40-270 GPa), operating current densities (3.2 x 10(5)-7 x 10(6) A m(-2)) and force constants. Although qualitatively, the properties of Mo(6)S(3)I(6) nanowires in nanoelectromechanical (NEM) switches are similar to those of carbon nanotubes (CNTs), their lower friction coefficient, higher mechanical stability and higher operation voltages give specific advantages in terms of smaller differences in on-off operating potentials, higher switching speeds and lower energy consumption than CNTs, which are critical for applications in NEM devices.