Ultrafast electron-optical phonon scattering and quasiparticle lifetime in CVD-grown graphene

Graphene Terahertz Devices for Sensing and Communication

Graphene-based terahertz (THz) devices have emerged as promising platforms for a variety of applications, leveraging graphene's unique optoelectronic properties. This review explores recent advancements in utilizing graphene in THz technology, focusing on two main aspects: THz molecular sensing and THz wave modulation. In molecular sensing, the environment-sensitive THz transmission and emission properties of graphene are utilized for enabling molecular adsorption detection and biomolecular sensing. This capability holds significant potential, from the detection of pesticides to DNA at high sensitivity and selectivity. In THz wave modulation, crucial for next-generation wireless communication systems, graphene demonstrates remarkable potential in absorption modulation when gated. Novel device structures, spectroscopic systems, and metasurface architectures have enabled enhanced absorption and wave modulation. Furthermore, techniques such as spatial phase modulation and polarization manipulation have been explored. From sensing to communication, graphene-based THz devices present a wide array of opportunities for future research and development. Finally, advancements in sensing techniques not only enhance biomolecular analysis but also contribute to optimizing graphene's properties for communication by enabling efficient modulation of electromagnetic waves. Conversely, developments in communication strategies inform and enhance sensing capabilities, establishing a mutually beneficial relationship.

Singlet Fission, Polaron Generation and Intersystem Crossing in Hexaphenyl Film

The ultrafast dynamics of triplet excitons and polarons in hexaphenyl film was investigated by time-resolved fluorescence and femtosecond transient absorption techniques under various excitation photon energies. Two distinct pathways of triplet formation were clearly observed. Long-lived triplet states are populated within 4.5 ps via singlet fission-intersystem crossing, while the short-lived triplet states (1.5 ns) are generated via singlet fission from vibrational electronic states. In the meantime, polarons were formed from hot excitons on a timescale of <30 fs and recombined in ultrafast lifetime (0.37 ps). In addition, the characterization of hexaphenyl film suggests the morphologies of crystal and aggregate to wide applications in organic electronic devices. The present study provides a universally applicable film fabrication in hexaphenyl system towards future singlet fission-based solar cells.

Singlet fission from upper excited singlet states and polaron formation in rubrene film

Femtosecond fluorescence up-conversion and transient absorption pump-probe setups are applied to study the relaxation dynamics of the lower and upper excited singlet electronic states in easy-to-make rubrene films. Upon 250 nm (4.96 eV) excitation, singlet fission was observed directly from S2 state bypassing S1 state within 30 fs i.e. breaking the classical Kasha rule. From the transient absorption measurements, polaron formation was also detected on the same time scale. Both singlet fission and polaron formation are accelerated from upper excited states compared with S1 state. Our work shows that rubrene films with low degree of crystallinity could display efficient singlet fission, notably in the case of excitation to upper lying electronic states. This can strongly expand the applications of rubrene in organic electronics. Moreover, our results will provide a new direction for synthesizing novel materials with optimized excited state properties for organic photovoltaic applications.

Plasmon-induced efficient hot carrier generation in graphene on gold ultrathin film with periodic array of holes: Ultrafast pump-probe spectroscopy

Using ultrafast pump-probe reflectivity with a 3.1 eV pump and coherent white light probe (1.1-2.6 eV), we show that graphene on gold nanostructures exhibits a strong coupling to the plasmonic resonances of the ordered lattice hole array, thus injecting a high density of hot carriers in graphene through plasmons. The system being studied is single-layer graphene on an ultrathin film of gold with periodic arrangements of holes showing anomalous transmission. A comparison is made with gold film with and without hole array. By selectively probing transient carrier dynamics in the spectral regions corresponding to plasmonic resonances, we show efficient plasmon induced hot carrier generation in graphene. We also show that due to high electromagnetic field intensities at the edge of the submicron holes, fast decay time (10-100 fs), and short decay length (1 nm) of plasmons, a highly confined density of hot carriers (very close to the edge of the holes) is generated by Landau damping of plasmons within the holey gold film. A contribution to transient decay dynamics due to the diffusion of the initial nonuniform distribution of hot carriers away from the hole edges is observed. Our results are important for future applications of novel hot carrier device concepts where hot carriers with tunable energy can be generated in different graphene regions connected seamlessly.

Making transient optical reflection of graphene polarization dependent

The polarization dependence of transient optical reflection, induced by nonequilibrium carriers isotropically distributed in momentum space, of graphene on substrate is experimentally and theoretically investigated. It is found that this transient optical reflection could be made greatly polarization dependent by using oblique incidence for light, and the characteristic of this polarization dependence could be flexibly altered with incident angle and incident direction (from graphene to substrate, or from substrate to graphene). Our results suggest that through polarization of incident beam is an efficient way of manipulating graphene transient optical reflection.

Ultrafast electron dynamics in epitaxial graphene investigated with time- and angle-resolved photoemission spectroscopy

In order to exploit the intriguing optical properties of graphene it is essential to gain a better understanding of the light-matter interaction in the material on ultrashort timescales. Exciting the Dirac fermions with intense ultrafast laser pulses triggers a series of processes involving interactions between electrons, phonons and impurities. Here we study these interactions in epitaxial graphene supported on silicon carbide (semiconducting) and iridium (metallic) substrates using ultrafast time- and angle-resolved photoemission spectroscopy (TR-ARPES) based on high harmonic generation. For the semiconducting substrate we reveal a complex hot carrier dynamics that manifests itself in an elevated electronic temperature and an increase in linewidth of the π band. By analyzing these effects we are able to disentangle electron relaxation channels in graphene. On the metal substrate this hot carrier dynamics is found to be severely perturbed by the presence of the metal, and we find that the electronic system is much harder to heat up than on the semiconductor due to screening of the laser field by the metal.

Optical characterization of electron-phonon interactions at the saddle point in graphene

The role of many-body interactions is experimentally and theoretically investigated near the saddle point absorption peak of graphene. The time and energy-resolved differential optical transmission measurements reveal the dominant role played by electron-acoustic phonon coupling in band structure renormalization. Using a Born approximation for electron-phonon coupling and experimental estimates of the dynamic lattice temperature, we compute the differential transmission line shape. Comparing the numerical and experimental line shapes, we deduce the effective acoustic deformation potential to be Deff(ac)≃5  eV. This value is in accord with recent theoretical predictions but differs from those extracted using electrical transport measurements.

Enhanced hot-carrier luminescence in multilayer reduced graphene oxide nanospheres

We report a method to promote photoluminescence emission in graphene materials by enhancing carrier scattering instead of directly modifying band structure in multilayer reduced graphene oxide (rGO) nanospheres. We intentionally curl graphene layers to form nanospheres by reducing graphene oxide with spherical polymer templates to manipulate the carrier scattering. These nanospheres produce hot-carrier luminescence with more than ten-fold improvement of emission efficiency as compared to planar nanosheets. With increasing excitation power, hot-carrier luminescence from nanospheres exhibits abnormal spectral redshift with dynamic feature associated to the strengthened electron-phonon coupling. These experimental results can be well understood by considering the screened Coulomb interactions. With increasing carrier density, the reduced screening effect promotes carrier scattering which enhances hot-carrier emission from such multilayer rGO nanospheres. This carrier-scattering scenario is further confirmed by pump-probe measurements.

Two-photon-induced singlet fission in rubrene single crystal

The two-photon-induced singlet fission was observed in rubrene single crystal and studied by use of femtosecond pump-probe spectroscopy. The location of two-photon excited states was obtained from the nondegenerate two-photon absorption (TPA) spectrum. Time evolution of the two-photon-induced transient absorption spectra reveals the direct singlet fission from the two-photon excited states. The TPA absorption coefficient of rubrene single crystal is 52 cm∕GW at 740 nm, as obtained from Z-scan measurements. Quantum chemical calculations based on time-dependent density functional theory support our experimental data.

Transient absorption microscopy studies of energy relaxation in graphene oxide thin film

Spatial mapping of energy relaxation in graphene oxide (GO) thin films has been imaged using transient absorption microscopy (TAM). Correlated AFM images allow us to accurately determine the thickness of the GO films. In contrast to previous studies, correlated TAM-AFM allows determination of the effect of interactions of GO with the substrate and between stacked GO layers on the relaxation dynamics. Our results show that energy relaxation in GO flakes has little dependence on the substrate, number of stacked layers, and excitation intensity. This is in direct contrast to pristine graphene, where these factors have great consequences in energy relaxation. This suggests intrinsic factors rather than extrinsic ones dominate the excited state dynamics of GO films.

Near-Infrared photoluminescence in the femtosecond time region in monolayer graphene on SiO₂

We investigate the dynamical properties of photoexcited carriers in a single monolayer of graphene at room temperature in air using femtosecond time-resolved luminescence spectroscopy. The luminescence kinetics are observed in the near-infrared region of 0.7-1.4 eV and analyzed based on the two-temperature model describing the cooling of thermalized carriers via the carrier-optical phonon interaction. The observed luminescence in the range 0.7-0.9 eV is well reproduced by the model. In the range 1.0-1.4 eV, however, the luminescence, which decays in ∼300 fs, cannot be reproduced by this model. These results indicate that the carrier system is not completely thermalized in ∼300 fs. We also show the importance of the carrier-doping effect induced by the substrate and surrounding environment in the carrier cooling dynamics and the predominance of optical phonons over acoustic phonons in the carrier-phonon interactions even at a temperature of ∼400 K.

The origin of fluorescence from graphene oxide

Time-resolved fluorescence measurements of graphene oxide in water show multiexponential decay kinetics ranging from 1 ps to 2 ns. Electron-hole recombination from the bottom of the conduction band and nearby localized states to wide-range valance band is suggested as origin of the fluorescence. Excitation wavelength dependence of the fluorescence was caused by relative intensity changes of few emission species. By introducing the molecular orbital concept, the dominant fluorescence was found to originate from the electronic transitions among/between the non-oxidized carbon regions and the boundary of oxidized carbon atom regions, where all three kinds of functionalized groups C-O, C = O and O = C-OH were participating. In the visible spectral range, the ultrafast fluorescence of graphene oxide was observed for the first time.

Excitation of surface electromagnetic waves in a graphene-based Bragg grating

Here, we report the fabrication of a graphene-based Bragg grating (one-dimensional photonic crystal) and experimentally demonstrate the excitation of surface electromagnetic waves in the periodic structure using prism coupling technique. Surface electromagnetic waves are non-radiative electromagnetic modes that appear on the surface of semi-infinite 1D photonic crystal. In order to fabricate the graphene-based Bragg grating, alternating layers of high (graphene) and low (PMMA) refractive index materials have been used. The reflectivity plot shows a deepest, narrow dip after total internal reflection angle corresponds to the surface electromagnetic mode propagating at the Bragg grating/air boundary. The proposed graphene based Bragg grating can find a variety of potential surface electromagnetic wave applications such as sensors, fluorescence emission enhancement, modulators, etc.

Singlet fission in rubrene single crystal: direct observation by femtosecond pump-probe spectroscopy

The excited state dynamics of rubrene in solution and in the single crystal were studied by femtosecond pump-probe spectroscopy under various excitation conditions. Singlet fission was demonstrated to play a predominant role in the excited state relaxation of the rubrene crystal in contrast to rubrene in solution. Upon 500 nm excitation, triplet excitons form on the picosecond time scale via fission from the lowest excited singlet state. Upon 250 nm excitation, fission from upper excited singlet states is observed within 200 fs.