Direct observation and measurement of mobile charge carriers in a monolayer organic semiconductor on a dielectric substrate

Nitrogen-doped amorphous monolayer carbon

Monoatomic-layered carbon materials, such as graphene1 and amorphous monolayer carbon2,3, have stimulated intense fundamental and applied research owing to their unprecedented physical properties and a wide range of promising applications4,5. So far, such materials have mainly been produced by chemical vapour deposition, which typically requires stringent reaction conditions compared to solution-phase synthesis. Herein, we demonstrate the solution preparation of free-standing nitrogen-doped amorphous monolayer carbon with mixed five-, six- and seven-membered (5-6-7-membered) rings through the polymerization of pyrrole within the confined interlayer cavity of a removable layered-double-hydroxide template. Structural characterizations and first-principles calculations suggest that the nitrogen-doped amorphous monolayer carbon was formed by radical polymerization of pyrrole at the α, β and N sites subjected to confinement of the reaction space, which enables bond rearrangements through the Stone-Wales transformation. The spatial confinement inhibits the C-C bond rotation and chain entanglement during polymerization, resulting in an atom-thick continuous amorphous layer with an in-plane π-conjugation electronic structure. The spatially confined radical polymerization using solid templates and ion exchange strategy demonstrates potential as a universal synthesis approach for obtaining two-dimensional covalent networks, as exemplified by the successful synthesis of monolayers of polythiophene and polycarbazole.

Identification of the conductivity type of single-walled carbon nanotubes via dual-modulation dielectric force microscopy

The conductivity type is one of the most fundamental transport properties of semiconductors, which is usually identified by fabricating the field-effect transistor, the Hall-effect device, etc. However, it is challenging to obtain an Ohmic contact if the sample is down to nanometer-scale because of the small size and intrinsic heterogeneity. Noncontact dielectric force microscopy (DFM) can identify the conductivity type of the sample by applying a DC gate voltage to the tip, which is effective in tuning the accumulation or depletion of charge carriers. Here, we further developed a dual-modulation DFM, which simplified the conductivity type identification from multiple scan times under different DC gate voltages to a single scan under an AC gate voltage. Taking single-walled carbon nanotubes as testing samples, the semiconducting-type sample exhibits a more significant charge carrier accumulation/depletion under each half-period of the AC gate voltage than the metallic-type sample due to the stronger rectification effect. The charge carrier accumulation or depletion of the p-type sample is opposite to that of the n-type sample at the same half-period of the AC gate voltage because of the reversed charge carrier type.

Directly Probing Interfacial Coupling in a Monolayer MoSe2 and CuPc Heterostructure

It is of great importance to develop useful methods to evaluate interfacial coupling strength noninvasively for exploring and optimizing heterointerface functionality. Recently, organic-inorganic van der Waals (vdW) heterostructures (HSs) composed of organic semiconductors and transition-metal dichalcogenides (TMD) have shown great potential for developing next-generation flexible optical, electrical, and optoelectrical devices. Since vdW coupling dominates the property of such a vdW HS, it is crucial to develop a method to evaluate its interfacial coupling strength noninvasively. In this work, by combining electrical force microscopy (EFM) and Raman and photoluminescence spectroscopic measurements, we were able to directly probe the coupling strength between monolayer MoSe₂ and a copper phthalocyanine (CuPc) thin film. Especially, we also found a new Raman mode in HS due to the Davydov splitting of the CuPc thin film via strong interfacial coupling between the two materials. This new Raman mode was thus utilized as a probe to reveal the modulation of the coupling strength by changing post-treatment conditions. All of these results indicate that the method developed here is capable of evaluating the coupling strength of the MoSe₂/CuPc HS effectively and innovatively, which aids in providing deep insights into such hybrid vdW HSs for future optical and optoelectrical applications.

Functional Scanning Force Microscopy for Energy Nanodevices

Energy nanodevices, including energy conversion and energy storage devices, have become a major cross-disciplinary field in recent years. These devices feature long-range electron and ion transport coupled with chemical transformation, which call for novel characterization tools to understand device operation mechanisms. In this context, recent developments in functional scanning force microscopy techniques and their application in thin-film photovoltaic devices and lithium batteries are reviewed. The advantages of scanning force microscopy, such as high spatial resolution, multimodal imaging, and the possibility of in situ and in operando imaging, are emphasized. The survey indicates that functional scanning force microscopy is making significant contributions in understanding materials and interfaces in energy nanodevices.

Probing nanoscale oxygen ion motion in memristive systems

Ion transport is an essential process for various applications including energy storage, sensing, display, memory and so on, however direct visualization of oxygen ion motion has been a challenging task, which lies in the fact that the normally used electron microscopy imaging mainly focuses on the mass attribute of ions. The lack of appropriate understandings and analytic approaches on oxygen ion motion has caused significant difficulties in disclosing the mechanism of oxides-based memristors. Here we show evidence of oxygen ion migration and accumulation in HfO2 by in situ measurements of electrostatic force gradient between the probe and the sample, as systematically verified by the charge duration, oxygen gas eruption and controlled studies utilizing different electrolytes, field directions and environments. At higher voltages, oxygen-deficient nano-filaments are formed, as directly identified employing a CS-corrected transmission electron microscope. This study could provide a generalized approach for probing ion motions at the nanoscale.

Photoexcited State Confinement in Two-Dimensional Crystalline Anthracene Monolayer at Room Temperature

Organic thin film electronics place a high demand on bottom-up technology to form a two-dimensionally (2D) functional unit consisting of a single molecular crystalline layer bound to a layered structure. As the strong interaction between a substrate and molecules makes it difficult to evaluate the electronic properties of organic films, the nature of electronic excited states has not been elucidated. Here, we study a 2D crystalline anthracene monolayer electronically decoupled by alkanethiolates on a gold substrate using scanning tunneling microscopy and time-resolved two-photon photoemission spectroscopy and unravel the geometric/electronic structures and excited electron dynamics. Our data reveal that dispersive 2D excited electrons on the surface can be highly coupled with an annihilation of nondispersive excitons that facilitate electron emission with vibronic interaction. Our results provide a fundamental framework for understanding photoexcited anthracene monolayer and show how the coupling between dispersive and nondispersive excited states may assist charge separation in crystalline molecular layers.

Dielectric force microscopy: imaging charge carriers in nanomaterials without electrical contacts

Nanomaterials are increasingly used in electronic, optoelectronic, bioelectronic, sensing, and energy nanodevices. Characterization of electrical properties at nanometer scales thus becomes not only a pursuit in basic science but also of widespread practical need. The conventional field-effect transistor (FET) approach involves making electrical contacts to individual nanomaterials. This approach faces serious challenges in routine characterization due to the small size and the intrinsic heterogeneity of nanomaterials, as well as the difficulties in forming Ohmic contact with nanomaterials. Since the charge carrier polarization in semiconducting and metallic materials dominates their dielectric response to external fields, detecting dielectric polarization is an alternative approach in probing the carrier properties and electrical conductivity in nanomaterials. This Account reviews the challenges in the electrical conductivity characterization of nanomaterials and demonstrates that dielectric force microscopy (DFM) is a powerful tool to address the challenges. DFM measures the dielectric polarization via its force interaction with charges on the DFM tip and thus eliminates the need to make electrical contacts with nanomaterials. Furthermore, DFM imaging provides nanometer-scaled spatial resolution. Single-walled carbon nanotubes (SWNTs) and ZnO nanowires are used as model systems. The transverse dielectric permittivity of SWNTs is quantitatively measured to be ∼10, and the differences in longitudinal dielectric polarization are exploited to distinguish metallic SWNTs from semiconducting SWNTs. By application of a gate voltage at the DFM tip, the local carrier concentration underneath the tip can be accumulated or depleted, depending on charge carrier type and the density of states near the Fermi level. This effect is exploited to identify the conductivity type and carrier type in nanomaterials. By making comparison between DFM and FET measurements on the exact same SWNTs, it is found that the DFM gate modulation ratio, which is the ratio of DFM signal strengths at different gate voltage, is linearly proportional to the logarithm of FET device on/off ratio. A Drude-level model is established to explain the semilogarithmic correlation between DFM gate modulation ration and FET device on/off ratio and simulate the dependence of DFM force on charge carrier concentration and mobility. Future developments towards DFM imaging of charge carrier concentration or mobility in nanomaterials and nanodevices can thus be expected.

Epitaxial growth of pentacene on alkali halide surfaces studied by Kelvin probe force microscopy

In the field of molecular electronics, thin films of molecules adsorbed on insulating surfaces are used as the functional building blocks of electronic devices. Control of the structural and electronic properties of the thin films is required for reliably operating devices. Here, noncontact atomic force and Kelvin probe force microscopies have been used to investigate the growth and electrostatic landscape of pentacene on KBr(001) and KCl(001) surfaces. We have found that, together with molecular islands of upright standing pentacene, a new phase of tilted molecules appears near step edges on KBr. Local contact potential differences (LCPD) have been studied with both Kelvin experiments and density functional theory calculations. Our images reveal that differently oriented molecules display different LCPD and that their value is independent of the number of molecular layers. These results point to the formation of an interface dipole, which may be explained by a partial charge transfer from the pentacene to the surface. Moreover, the monitoring of the evolution of the pentacene islands shows that they are strongly affected by dewetting: Multilayers build up at the expense of monolayers, and in the Kelvin images, previously unknown line defects appear, which reveal the epitaxial growth of pentacene crystals.

Charge transfer highways in polymer solar cells embedded with imprinted PEDOT:PSS gratings

Carrier transport highways induced by nanoimprinted PEDOT:PSS gratings play important roles in the enhancement of the electrical performances of P3HT:ICBA-based organic photovoltaic cells.

A general approach for fast detection of charge carrier type and conductivity difference in nanoscale materials

A general method using a biased atomic force microscopy tip that allows a qualitative, fast, and reliable determination of key electronic properties such as metallic, n-, or p-doped characteristics has been reported for the first time. This method eliminates the detrimental effect of contact in the traditional transport measurement and is much simpler than the common-electrostatic force microscopy detection method, thus providing a powerful tool for fast characterizations of nanomaterials.

Charge trapping states at the SiO2-oligothiophene monolayer interface in field effect transistors studied by Kelvin probe force microscopy

Using Kelvin probe force microscopy (KPFM) we studied the local charge trapping states at the SiO2-oligothiophene interface in a field effect transistor (FET), where SiO2 is the gate dielectric. KPFM reveals surface potential inhomogeneities within the oligothiophene monolayer, which correlate with its structure. A large peak of trap states with energies in the oligothiophene's band gap due to hydroxyl groups is present at the oxide surface. We show that these states are successfully eliminated by preadsorption of a layer of (3-aminopropyl)triethoxysilane (APTES). Time-resolved surface potential transient measurements further show that the charge carrier injection in the nonpassivated FET contains two exponential transients, due to the charge trapping on the oxide surface and in the bulk oxide, while the APTES-passivated FET has only a single-exponential transient due to the bulk oxide. The results demonstrate that APTES is a good SiO2 surface passivation layer to reduce trap states while maintaining a hydrophilic surface, pointing out the importance of dielectric surface passivation to bridge the gap between soft materials and electronic devices.

Space- and time-resolved mapping of ionic dynamic and electroresistive phenomena in lateral devices

A scanning probe microscopy-based technique for probing local ionic and electronic transport and their dynamic behavior on the 10 ms to 10 s scale is presented. The time-resolved Kelvin probe force microscopy (tr-KPFM) allows mapping of surface potential in both space and time domains, visualizing electronic and ionic charge dynamics and separating underlying processes based on their time responses. Here, tr-KPFM is employed to explore the interplay of the adsorbed surface ions and bulk oxygen vacancies and their role in the resistive switching in a Ca-substituted bismuth ferrite thin film.

Nanoscale charge distribution and energy band modification in defect-patterned graphene

Defects were introduced precisely to exfoliated graphene (G) sheets on a SiO(2)/n(+) Si substrate to modulate the local energy band structure and the electron pathway using solution-phase oxidation followed by thermal reduction. The resulting nanoscale charge distribution and band gap modification were investigated by electrostatic force microscopy and spectroscopy. A transition phase with coexisting submicron-sized metallic and insulating regions in the moderately oxidized monolayer graphene were visualized and measured directly. It was determined that the delocalization of electrons/holes in a graphene "island" is confined by the surrounding defective C-O matrix, which acts as an energy barrier for mobile charge carriers. In contrast to the irreversible structural variations caused by the oxidation process, the electrical properties of graphene can be restored by annealing. The defect-patterned graphene and graphene oxide heterojunctions were further characterized by electrical transport measurement.