Effect of film thickness and domain spacing on defect densities in directed self-assembly of cylindrical morphology block copolymers

Directed Self-Assembly by Sparsely Prepatterned Substrates with Self-Responsive Polymer Brushes

The guiding pattern in the chemoepitaxially directed self-assembly (DSA) of block copolymers is often fabricated by periodically functionalizing homogeneously random copolymer brushes tethered on a substrate. The prepatterned copolymer brushes constitute a soft penetrable surface, and their two components can in principle locally segregate in response to the overlying self-assembly process of block copolymers. To reveal how the self-responsive behavior of the copolymer brushes affects the directing effect, we develop a dissipative particle dynamics model to explicitly include the prepatterned polymer brushes and implement it to simulate the DSA of a cylinder-forming diblock copolymer melt on the sparse pattern of polymer brushes. Through large-scale dynamic simulations, we identify the windows of the content of the random copolymer, the film thickness, and the diameter of the patterned spot, for the formation of perfectly ordered hexagonal patterns composed of perpendicular cylinders. Our dynamic simulations reveal that the random copolymer brushes grafted on the unpatterned area exhibit a remarkable self-responsive ability with respect to the self-assembly of the diblock copolymers overlying them, which may widen the effective window of the content of the random copolymer. Within the processing windows of these key parameters, defect-free patterns are successfully achieved both in simulations and in experiments with sizes as large as a few micrometers for 4-fold density multiplications. This work demonstrates that highly efficient computer simulations based on an effective model can provide helpful guidance for experiments to optimize the critical parameters and even may promote the application of DSA.

Template Design for Complex Block Copolymer Patterns Using a Machine Learning Method

This study represents the first attempt to address the inverse design problem of the guiding template for directed self-assembly (DSA) patterns using solely machine learning methods. By formulating the problem as a multi-label classification task, the study shows that it is possible to predict templates without requiring any forward simulations. A series of neural network (NN) models, ranging from the basic two-layer convolutional neural network (CNN) to the large NN models (32-layer CNN with 8 residual blocks), have been trained using simulated pattern samples generated by thousands of self-consistent field theory (SCFT) calculations; a number of augmentation techniques, especially suitable for predicting morphologies, have been also proposed to enhance the performance of the NN model. The exact match accuracy of the model in predicting the template of simulated patterns was significantly improved from 59.8% for the baseline model to 97.1% for the best model of this study. The best model also demonstrates an excellent generalization ability in predicting the template for human-designed DSA patterns, while the simplest baseline model is ineffective in this task.

Periodic nanowire arrays with alternating compositions and structures fabricated using a simultaneous nanowire formation step

Arrays of alternating metallic nanostructures present hybrid properties, which are useful for applications in photonics and catalysis. Block copolymer films provide versatile templates for fabricating periodic arrays of nanowires. Yet, creating arrays with alternating compositions or structures requires different modifications of domains of the same kind. By controlling the penetration depth of metal precursors into the film we were able to impregnate different layers of copolymer cylinders with different metals. Capitalizing on the hexagonal packing of the cylinders led to simultaneous formation of nanowires with alternating compositions and periodic arrangement on the substrate after plasma etching. Selective deposition of nanoparticles on the film enabled creating alternating bare and decorated nanowires, as well as trimetallic nanowire arrays.

Phase behavior in thin films of weakly segregated block copolymer/homopolymer blends

We have demonstrated the phase behavior of substrate-supported films of a symmetric weakly segregated polystyrene-block-poly (methyl methacrylate), P(S-b-MMA), block copolymer and its blends with homopolymer polystyrene (PS) at different compositions. Upon increasing the content of added PS in the blends, lamellae (L), perforated layers (PL), double gyroid (DG) and cylinders (C) are obtained in sequence for films. Among these nanodomains, PL and DG only exist in a narrow ϕ_PS region (ϕ_PS denotes the volume fraction of PS). At ϕ_PS = 64%, tuning film thickness and annealing temperature can produce parallel PL or DG with {121}_DG lattice planes being parallel to the substrate surface. The effects of annealing temperature and film thickness on the formation of PL and DG are examined. In thin films with n ≈ 3 (n denotes the ratio of initial film thickness to inter-domain spacing), the PL phase solely exists regardless of temperature. However, for thick films with n ≈ 6 and 10, thermal annealing at the most accessible temperature produces films containing both PL and DG of various fractions, but a low temperature tends to favor a greater fraction of PL. The PL phase becomes the only discernible phase if thick films are shortly annealed at 230 °C.

Machine Learning Predictions of Block Copolymer Self-Assembly

Directed self-assembly of block copolymers is a key enabler for nanofabrication of devices with sub-10 nm feature sizes, allowing patterning far below the resolution limit of conventional photolithography. Among all the process steps involved in block copolymer self-assembly, solvent annealing plays a dominant role in determining the film morphology and pattern quality, yet the interplay of the multiple parameters during solvent annealing, including the initial thickness, swelling, time, and solvent ratio, makes it difficult to predict and control the resultant self-assembled pattern. Here, machine learning tools are applied to analyze the solvent annealing process and predict the effect of process parameters on morphology and defectivity. Two neural networks are constructed and trained, yielding accurate prediction of the final morphology in agreement with experimental data. A ridge regression model is constructed to identify the critical parameters that determine the quality of line/space patterns. These results illustrate the potential of machine learning to inform nanomanufacturing processes.

Adsorption and ordering of amphiphilic rod-coil block copolymers on a substrate: conditions for well-aligned stripe nanopatterns

Controlling the ordering of self-assembled nanostructures is vital in block copolymer nanotechnology but still presents a challenge. Here we demonstrated that the adsorption and ordering of amphiphilic rod-coil block copolymers on a substrate can generate well-aligned stripe nanopatterns by dissipative particle dynamics simulations. The effects of the copolymer concentration and the surface affinity on the formation of stripe nanopatterns were examined. The simulation results revealed that the well-aligned stripe nanopatterns with controllable thickness and stripe width can be obtained in the systems with higher copolymer concentration and surface affinity. An immersion coating experiment was designed to verify the simulation results, and an agreement is shown. The present work provides a strategy for constructing well-aligned stripe nanopatterns in a controllable way.

Role of Defects in Achieving Highly Asymmetric Lamellar Self-Assembly in Block Copolymer/Homopolymer Blends

Lamellar structure is a prominent state in soft condensed matter. Swelling lamellar layers to highly asymmetric structures by a second component is a facile, cost-effective strategy to impart materials with adaptive size and tunable properties. One key question that remains unsolved is how defects form and affect the asymmetric lamellar order. This study unravels the role of defects by swelling a miktoarm block copolymer with a homopolymer. Ordered lamellae first lose translational order by a significant increase in the number of dislocations and then lose orientational order by the generation of disclinations. The homopolymers are not uniformly distributed in defective lamellae and primarily segregate in the vicinity of disclination cores. The free energy of defects is mainly contributed by molecular splay and significantly alleviated by an increased radius of local curvature. This study provides direct evidence to reveal the role of defects and lamellar order in block copolymer/homopolymer blends and also sheds light on understanding analogous structural transitions in other soft systems, including lyotropic liquid crystals, phospholipid membranes, and polymer nanocomposites.

High-χ alternating copolymers for accessing sub-5 nm domains via simulations

Based on molecular dynamics simulations, we designed novel high-χ alternating copolymers (ACPs) for fabricating sub-5 nm domains.

Effects of the Density of Chemical Cross-links and Physical Entanglements of Ultraviolet-Irradiated Polystyrene Chains on Domain Orientation and Spatial Order of Polystyrene-block-Poly(methyl methacrylate) Nano-Domains

Ultraviolet irradiation (UVI) of varied duration caused cross-linking and neutralization of polystyrene (PS) homopolymers of molar mass (M_n) from 6 to 290 kg mol^-1 on a silicon-oxide surface. An optimal neutral skin layer on the surface of the PS was obtained via brief UVI in air (UVIA), by which the PS had no preferential interaction with either block in the copolymer. UVI in an inert environment (gaseous dinitrogen) (UVIN) stabilized the PS layers via cross-linking and enabled the PS networks to have an effective adhesive contact with the underlying substrate. Thorough examination of domain orientations and spatial orders of a series of block copolymer, polystyrene-block-poly(methyl methacrylate) (PS-b-PMMA), thin films deposited on these UVI-treated PS support layers yielded clear evidence that a dense layer of neutralized PS chains was required for the perpendicular orientation of PS-b-PMMA nanodomains. In particular, in addition to neutralization, two factors-the densities of physical entanglements and of chemical crosslinks-both in UVI-treated PS should be considered for the perpendicular orientation of nanolamellae and nanocylinders in symmetric and asymmetric PS-b-PMMA thin films. The density of physical entanglement in PS depends intrinsically on M_n of the PS, whereas the density of chemical cross-links was controlled with a varied duration of UVIN. Sufficiently large densities of physical entanglements and chemical cross-links can prevent PS-b-PMMA chains from penetrating through the neutral skin layer. The total density of physical entanglements and chemical cross-links required for the perpendicular orientation is correlated with the dimensions of the PS-b-PMMA chains.

The selectivity of poly(2-vinylpyridine-block-methyl methacrylate) copolymer films: an AFM study

In this study, the surface morphologies of poly(2-vinyl pyridine-block-methyl methacrylate), P(2VP-MMA), copolymer films were analyzed by atomic force microscopy. P(2VP-MMA) samples varying in total molar mass and individual block length were evaluated for variations in the surface morphologies of films cast from toluene on Si wafers. The incorporation of AuNPs into the polymer domain significantly influenced the surface morphology of the films. Variations in the surface morphology as a function of the polarity of the casting solvent were also examined. In this context toluene (a non-polar solvent), chloroform (of intermediate polarity) and ethyl acetate (a polar solvent) were employed as casting solvents. Toluene is a good solvent for PMMA compared to P2VP, chloroform has no preferential solvation, while ethyl acetate is a good solvent for P2VP compared to PMMA. The morphology of the films cast on substrates of distinctly different polarities, such as mica, Si wafers, and HOPG, were studied to appraise their selectivity. Finally, a detailed study of the effects of thermal annealing on the surface morphologies of P(2VP-MMA) and P(2VP-MMA)-AuNPs was conducted.

In this study, the surface morphologies of poly(2-vinyl pyridine-block-methyl methacrylate), P(2VP-MMA), copolymer films were analyzed by atomic force microscopy.

Orientational ordering of lamellar structures on closed surfaces

Self-assembly of particles with short-range attraction and long-range repulsion interactions on a flat and on a spherical surface is compared. Molecular dynamics simulations are performed for the two systems having the same area and the density optimal for formation of stripes of particles. Structural characteristics, e.g., a cluster size distribution, a number of defects, and an orientational order parameter (OP), as well as the specific heat, are obtained for a range of temperatures. In both cases, the cluster size distribution becomes bimodal and elongated clusters appear at the temperature corresponding to the maximum of the specific heat. When the temperature decreases, orientational ordering of the stripes takes place and the number of particles per cluster or stripe increases in both cases. However, only on the flat surface, the specific heat has another maximum at the temperature corresponding to a rapid change of the OP. On the sphere, the crossover between the isotropic and anisotropic structures occur in a much broader temperature interval; the orientational order is weaker and occurs at significantly lower temperature. At low temperature, the stripes on the sphere form spirals and the defects resemble defects in the nematic phase of rods adsorbed at a sphere.

Orthogonally Aligned Block Copolymer Line Patterns on Minimal Topographic Patterns

We demonstrate the generation of block copolymer (BCP) line patterns oriented orthogonal to a very small (minimal) topographic trench pattern over arbitrarily large areas using solvent-vapor annealing. Increasing the thickness of BCP films induced an orthogonal alignment of the BCP cylindrical microdomains, where full orthogonal alignment of the cylindrical microdomains with respect to the trench direction was obtained at a film thickness corresponding to 1.70 L₀. A capillary flow of the solvent across the trenches was a critical factor in the alignment of the cylindrical microdomains. Grazing incidence small-angle X-ray scattering was used to determine the orientation function of the microdomains, with a value of 0.997 being found reflecting a nearly perfect orientation. This approach to produce orthogonally aligned BCP line patterns could be extended to the nanomanufacturing and fabrication of hierarchical nanostructures.

Well-ordered self-assembled nanostructures of block copolymer films via synergistic integration of chemoepitaxy and zone annealing

The integrated chemical template/zone annealing method has the capability to rapidly fabricate well-aligned and well-oriented nanostructures over a macroscopic area.

Macroscopically ordered hexagonal arrays by directed self-assembly of block copolymers with minimal topographic patterns

A simple and robust method has been developed for the generation of macroscopically ordered hexagonal arrays from the directed self-assembly (DSA) of cylinder-forming block copolymers (BCPs) based on minimal trench patterns with solvent vapor annealing. The use of minimal trench patterns allows us to probe the guided hexagonal arrays of cylindrical microdomains using grazing incidence small angle X-ray scattering (GISAXS), where the sample stage is rotated on the basis of the six-fold symmetry of a hexagonal system. It is found that the (10) planes of hexagonal arrays of cylindrical microdomains are oriented parallel to the underlying trench direction over macroscopic length scales (∼1 × 1 cm²). However, there are misorientations of the hexagonal arrays with short-range ordering. GISAXS patterns show that the hexagonal arrays on the minimal trench pattern are distorted, deviating from a perfect hexagonal lattice. This distortion has been attributed to the absence of topographic constraints in the unconfined direction on the 1-D minimal trench pattern. Also, the frustration of BCP microdomains, arising from the incommensurability between the trench pitch and natural period of the BCP at the base of the trench, influences the distortion of the hexagonal arrays.

Flash Light Millisecond Self-Assembly of High χ Block Copolymers for Wafer-Scale Sub-10 nm Nanopatterning

One of the fundamental challenges encountered in successful incorporation of directed self-assembly in sub-10 nm scale practical nanolithography is the process compatibility of block copolymers with a high Flory-Huggins interaction parameter (χ). Herein, reliable, fab-compatible, and ultrafast directed self-assembly of high-χ block copolymers is achieved with intense flash light. The instantaneous heating/quenching process over an extremely high temperature (over 600 °C) by flash light irradiation enables large grain growth of sub-10 nm scale self-assembled nanopatterns without thermal degradation or dewetting in a millisecond time scale. A rapid self-assembly mechanism for a highly ordered morphology is identified based on the kinetics and thermodynamics of the block copolymers with strong segregation. Furthermore, this novel self-assembly mechanism is combined with graphoepitaxy to demonstrate the feasibility of ultrafast directed self-assembly of sub-10 nm nanopatterns over a large area. A chemically modified graphene film is used as a flexible and conformal light-absorbing layer. Subsequently, transparent and mechanically flexible nanolithography with a millisecond photothermal process is achieved leading the way for roll-to-roll processability.

Metrology of DNA arrays by super-resolution microscopy

Recent results in the assembly of DNA into structures and arrays with nanoscale features and patterns have opened the possibility of using DNA for sub-10 nm lithographic patterning of semiconductor devices. Super-resolution microscopy is being actively developed for DNA-based imaging and is compatible with inline optical metrology techniques for high volume manufacturing. Here, we combine DNA tile assembly with state-dependent super-resolution microscopy to introduce crystal-PAINT as a novel approach for metrology of DNA arrays. Using this approach, we demonstrate optical imaging and characterization of DNA arrays revealing grain boundaries and the temperature dependence of array quality. For finite arrays, analysis of crystal-PAINT images provides further quantitative information of array properties. This metrology approach enables defect detection and classification and facilitates statistical analysis of self-assembled DNA nanostructures.

Strip-Pattern-Spheres Self-Assembled from Polypeptide-Based Polymer Mixtures: Structure and Defect Features

We found that poly(γ-benzyl-L-glutamate)-block-poly(ethylene glycol) (PBLG-b-PEG) rod-coil block copolymers and polystyrene (PS) homopolymers can cooperatively self-assemble into nano-spheres with striped patterns on their surfaces (strip-pattern-spheres) in aqueous solution. With assistance of dissipative particle dynamics simulation, it is discovered that the PS homopolymers form a spherical template core and the PBLG-b-PEG block copolymers assemble into striped patterns on the spherical surface. The hydrophobic PBLG rods are packed orderly in the strips, while the hydrophilic PEG blocks stabilize the strip-pattern-spheres in solution. Defects such as dislocations and disclinations can be observed in the striped patterns. Self-assembling temperature and sphere radius are found to affect defect densities in the striped patterns. A possible mechanism is proposed to illustrate how PBLG-b-PEG and PS cooperatively self-assemble into hierarchical spheres with striped patterns on surfaces.

Order-disorder transition in thin films of horizontally-oriented cylinder-forming block copolymers: thermal fluctuations vs. preferential wetting

We present experimental and theoretical investigations of the order-disorder transition (ODT) in thin films of cylinder-forming diblock copolymers with asymmetric wetting conditions. Grazing incidence small-angle X-ray scattering (GISAXS) was implemented to determine the ODT temperatures (TODT) for poly(styrene-b-2-vinyl pyridine) (PS-P2VP) block copolymer thin films on a P2VP-preferential silicon substrate. Specifically, films consisting of multilayers of horizontally-oriented cylindrical structures (from 1- to 9-layers) were tested. We find that films with more than 2 cylindrical layers have a TODT comparable to the bulk case. However, TODT decreases as the film becomes thinner and the monolayer system has an ODT 30 °C below the bulk. Using self-consistent field theory (SCFT), we studied the ordering in corresponding thin films with asymmetric (top and bottom surface) wetting conditions. Surprisingly, SCFT is found to predict an opposite trend in TODT with film thickness than observed experimentally. Field-theoretic simulations with complex Langevin sampling were employed to resolve this discrepancy and demonstrate that thermal fluctuations in the PS-P2VP thin-film system dominate its ordering behavior in monolayer and bilayer films.

Patterning at the 10 nanometer length scale using a strongly segregating block copolymer thin film and vapor phase infiltration of inorganic precursors

In this work, we demonstrate the use of self-assembled thin films of the cylinder-forming block copolymer poly(4-tert-butylstyrene-block-2-vinylpyridine) to pattern high density features at the 10 nm length scale. This material's large interaction parameter facilitates pattern formation in single-digit nanometer dimensions. This block copolymer's accessible order-disorder transition temperature allows thermal annealing to drive the assembly of ordered 2-vinylpyridine cylinders that can be selectively complexed with the organometallic precursor trimethylaluminum. This unique chemistry converts organic 2-vinylpyridine cylinders into alumina nanowires with diameters ranging from 8 to 11 nm, depending on the copolymer molecular weight. Graphoepitaxy of this block copolymer aligns and registers sub-12 nm diameter nanowires to larger-scale rectangular, curved, and circular features patterned by optical lithography. The alumina nanowires function as a robust hard mask to withstand the conditions required for patterning the underlying silicon by plasma etching. We conclude with a discussion of some of the challenges that arise with using block copolymers for patterning at sub-10 nm feature sizes.

Poly(cyclohexylethylene)-block-Poly(lactide) Oligomers for Ultrasmall Nanopatterning Using Atomic Layer Deposition

Poly(cyclohexylethylene)-block-poly(lactide) (PCHE-PLA) block polymers were synthesized through a combination of anionic polymerization, heterogeneous catalytic hydrogenation and controlled ring-opening polymerization. Ordered thin films of PCHE-PLA with ultrasmall hexagonally packed cylinders oriented perpendicularly to the substrate surface were prepared by spin-coating and subsequent solvent vapor annealing for use in two distinct templating strategies. In one approach, selective hydrolytic degradation of the PLA domains generated nanoporous PCHE templates with an average pore diameter of 5 ± 1 nm corroborated by atomic force microscopy and grazing incidence small-angle X-ray scattering. Alternatively, sequential infiltration synthesis (SIS) was employed to deposit Al2O3 selectively into the PLA domains of PCHE-PLA thin films. A combination of argon ion milling and O2 reactive ion etching (RIE) enabled the replication of the Al2O3 nanoarray from the PCHE-PLA template on diverse substrates including silicon and gold with feature diameters less than 10 nm.

Synthesis and Self-Assembly of Discrete Dimethylsiloxane-Lactic Acid Diblock Co-oligomers: The Dononacontamer and Its Shorter Homologues

Most of the theoretical and computational descriptions of the phase behavior of block copolymers describe the chain ensembles of perfect and uniform polymers. In contrast, experimental studies on block copolymers always employ materials with disperse molecular makeup. Although most polymers are so-called monodisperse, they still have a molecular weight dispersity. Here, we describe the synthesis and properties of a series of discrete length diblock co-oligomers, based on oligo-dimethylsiloxane (oDMS) and oligo-lactic acid (oLA), diblock co-oligomers with highly noncompatible blocks. By utilizing an iterative synthetic protocol, co-oligomers with molar masses up to 6901 Da, ultralow molar mass dispersities (Đ ≤ 1.00002), and unique control over the co-oligomer composition are synthesized and characterized. This specific block co-oligomer required the development of a new divergent strategy for the oDMS structures by which both bis- and monosubstituted oDMS derivatives up to 59 Si-atoms became available. The incompatibility of the two blocks makes the final coupling more demanding the longer the blocks become. These optimized synthetic procedures granted access to multigram quantities of most of the block co-oligomers, useful to study the lower limits of block copolymer phase segregation in detail. Cylindrical, gyroid, and lamellar nanostructures, as revealed by DSC, SAXS, and AFM, were generated. The small oligomeric size of the block co-oligomers resulted in exceptionally small feature sizes (down to 3.4 nm) and long-range organization.

Micropore extrusion-induced alignment transition from perpendicular to parallel of cylindrical domains in block copolymers

The orientation transition from perpendicular to parallel alignment of PEO cylindrical domains of PEO-b-PMA(Az) films has been demonstrated by extruding the block copolymer (BCP) solutions through a micropore of a plastic gastight syringe. The parallelized orientation of PEO domains induced by this micropore extrusion can be recovered to perpendicular alignment via ultrasonication of the extruded BCP solutions and subsequent annealing. A plausible mechanism is proposed in this study. The BCP films can be used as templates to prepare nanowire arrays with controlled layers, which has enormous potential application in the field of integrated circuits.

Orientation Control in Thin Films of a High-χ Block Copolymer with a Surface Active Embedded Neutral Layer

Directed self-assembly (DSA) of block copolymers (BCPs) is an attractive advanced patterning technology being considered for future integrated circuit manufacturing. By controlling interfacial interactions, self-assembled microdomains in thin films of polystyrene-block-poly(methyl methacrylate), PS-b-PMMA, can be oriented perpendicular to surfaces to form line/space or hole patterns. However, its relatively weak Flory interaction parameter, χ, limits its capability to pattern sub-10 nm features. Many BCPs with higher interaction parameters are capable of forming smaller features, but these "high-χ" BCPs typically have an imbalance in surface energy between the respective blocks that make it difficult to achieve the required perpendicular orientation. To address this challenge, we devised a polymeric surface active additive mixed into the BCP solution, referred to as an embedded neutral layer (ENL), which segregates to the top of the BCP film during casting and annealing and balances the surface tensions at the top of the thin film. The additive comprises a second BCP with a "neutral block" designed to provide matched surface tensions with the respective polymers of the main BCP and a "surface anchoring block" with very low surface energy that drives the material to the air interface during spin-casting and annealing. The surface anchoring block allows the film to be annealed above the glass transition temperature of the two materials without intermixing of the two components. DSA was also demonstrated with this embedded neutral top layer formulation on a chemical patterned template using a single step coat and simple thermal annealing. This ENL technology holds promise to enable the use of high-χ BCPs in advanced patterning applications.

Reordering transitions during annealing of block copolymer cylinder phases

While equilibrium block-copolymer morphologies are dictated by energy-minimization effects, the semi-ordered states observed experimentally often depend on the details of ordering pathways and kinetics. Here, we explore reordering transitions in thin films of block-copolymer cylinder-forming polystyrene-block-poly(methyl methacrylate). We observe several transient states as films order towards horizontally-aligned cylinders. In particular, there is an early-stage reorganization from randomly-packed cylinders into hexagonally-packed vertically-aligned cylinders; followed by a reorientation transition from vertical to horizontal cylinder states. These transitions are thermally activated. The growth of horizontal grains within an otherwise vertical morphology proceeds anisotropically, resulting in anisotropic grains in the final horizontal state. The size, shape, and anisotropy of grains are influenced by ordering history; for instance, faster heating rates reduce grain anisotropy. These results help elucidate aspects of pathway-dependent ordering in block-copolymer thin films.

Probing the Effect of Molecular Nonuniformity in Directed Self-Assembly of Diblock Copolymers in Nanoconfined Space

Various complex self-assembled morphologies of lamellar- and cylinder-forming block copolymers comprising poly(dimethylsiloxane)-b-polylactide (PDMS-b-PLA) confined in cylindrical channels were generated. Combining top-down lithography with bottom-up block copolymer self-assembly grants access to morphologies that are otherwise inaccessible with the bulk materials. Channel diameter (D) was systematically varied with four diblock copolymers having different compositions and bulk domain spacing (L0), corresponding to a range of frustration ratios (D/L0 from 2 to 4). Excessive packing frustration imposed by the channels leads to contorted domains. The resulting morphologies depend strongly on both D/L0 and copolymer composition. Under several circumstances, mixtures of complex morphologies were observed, which hypothetically arise from the severe sensitivity to D/L0 combined with the inherent compositional/molar mass dispersities associated with the nonuniform synthetic materials and silicon templates. Stochastic calculations offer compelling support for the hypothesis, and tractable pathways toward solving this apparent conundrum are proposed. The materials hold great promise for next-generation nanofabrication to address several emerging technologies, offering significantly enhanced versatility to basic diblock copolymers as templates for fabricating complex nanoscale objects.

High χ-Low N Block Polymers: How Far Can We Go?

Block polymers incorporating highly incompatible segments are termed "high χ" polymers, where χ is the Flory-Huggins interaction parameter. These materials have attracted a great deal of interest because low molar mass versions allow for the formation of microphase-separated domains with very small (<10 nm) feature sizes useful for nanopatterning at these extreme dimensions. Given that well-established photolithographic techniques now face difficult challenges of implementation at scales of 10 nm and below, the drive to further develop high χ block polymers is motivated by trends in the microelectronics industry. This Viewpoint highlights our perspective on this niche of block polymer self-assembly. We first briefly review the relevant recent literature, exploring the various block polymer compositions that have been specifically designed for small feature size patterning. We then overview the now standard method for the benchmarking χ values between different pairs of polymers and the consequences of low N and high χ on the thermodynamic aspects of microphase separation. Finally, we comment on restrictions going forward and offer our perspective on the future of this exciting area of block polymer self-assembly.

Defects in the Self-Assembly of Block Copolymers and Their Relevance for Directed Self-Assembly

Block copolymer self-assembly provides a platform for fabricating dense, ordered nanostructures by encoding information in the chemical architecture of multicomponent macromolecules. Depending on the volume fraction of the components and chain topology, these macromolecules form a variety of spatially periodic microphases in thermodynamic equilibrium. The kinetics of self-assembly, however, often results in initial morphologies with defects, and the subsequent ordering is protracted. Different strategies have been devised to direct the self-assembly of copolymer materials by external fields to align and perfect the self-assembled nanostructures. Understanding and controlling the thermodynamics of defects, their response to external fields, and their dynamics is important because applications in microelectronics either require extremely low defect densities or aim at generating specific defects at predetermined locations to fabricate irregular device-oriented structures for integrated circuits. In this review, we discuss defect morphologies of block copolymers in the bulk and thin films, highlighting (a) analogies to and differences from defects in other crystalline materials, (b) the stability of defects and their dynamics, and (c) the influence of external fields.

Transfer of Direct and Moiré Patterns by Reactive Ion Etching Through Ex Situ Fabricated Nanoporous Polymer Masks

We present a conceptually simple approach to nanolithographic patterning utilizing ex situ fabricated nanoporous masks from block copolymers. The fabricated block copolymer (BC) masks show predictable morphology based on the correlation between BC composition and bulk properties, independent of substrates' surface properties. The masks are prepared by microtoming of prealigned nanoporous polymer monoliths of hexagonal morphology at controlled angles; they appear as 30-60 nm thick films of typical dimensions 100 μm × 200 μm. Masks cut perpendicular to the cylindrical axis show monocrystalline hexagonal packing of 10 nm pores with a principal period of 20 nm. We demonstrate the transfer of the hexagonal pattern onto silicon by means of reactive ion etching through the masks. In addition, patterns of elliptic and slit-like holes on silicon are obtained by utilizing masks cut at 45° relative to the cylinder axis. Finally, we demonstrate the first transfer of moiré patterns from block copolymer masks to substrate. The nanoporous masks prepared ex situ show outstanding long-range order and can be applied directly onto any flat substrate, eliminating the need for topographic and chemical surface modification, which are essential prerequisites for the conventional procedure of block copolymer directed self-assembly. The demonstrated elliptic and moiré pattern transfers prove that the proposed ex situ procedure allows us to realize nanolithographic patterns that are difficult to realize by the conventional approach alone.

Writing Highly Ordered Macroscopic Patterns in Cylindrical Block Polymer Thin Films via Raster Solvent Vapor Annealing and Soft Shear

Block polymers (BPs) potentially can be used to template large arrays of nanopatterns for advanced nanotechnologies. However, the practical utilization of directed BP self-assembly typically requires guide patterns of relatively small size scales. In this work, the macroscopic alignment of block polymer cylinders on a template-free substrate is achieved through raster solvent vapor annealing combined with soft shear (RSVA-SS). Spatial control over nanoscale structures is realized by using a solvent vapor delivery nozzle, poly(dimethylsiloxane) shearing pad, and motorized stage. Complex patterns including dashes, crossed lines, and curves are demonstrated, along with the ability for large area alignment and scale-up for industry applications. The unique ability to directly write macroscopic patterns with microscopically aligned BP nanostructures will open new avenues of applied research in nanotechnology.

Self-assembly of diblock copolymer confined in an array-structure space

The combination of top-down and bottom-up technologies is an effective method to create the novel nanostructures with long range order in the field of advanced materials manufacture. In this work, we employed a polymeric self-consistent field theory to investigate the pattern formation of diblock copolymer in a 2D confinement system designed by filling pillar arrays with various 2D shapes such as squares, rectangles, and triangles. Our simulation shows that in such confinement system, the microphase structure of diblock copolymer strongly depends on the pitch, shape, size, and rotation of the pillar as well as the surface field of confinement. The array structures can not only induce the formation of new phase patterns but also control the location and orientation of pattern structures. Finally, several methods to tune the commensuration and frustration of array-structure confinement are proposed and examined.

Simulation of Defect Reduction in Block Copolymer Thin Films by Solvent Annealing

Solvent annealing provides an effective means to control the self-assembly of block copolymer (BCP) thin films. Multiple effects, including swelling, shrinkage, and morphological transitions, act in concert to yield ordered or disordered structures. The current understanding of these processes is limited; by relying on a theoretically informed coarse-grained model of block copolymers, a conceptual framework is presented that permits prediction and rationalization of experimentally observed behaviors. Through proper selection of several process conditions, it is shown that a narrow window of solvent pressures exists over which one can direct a BCP material to form well-ordered, defect-free structures.

Determination of the internal morphology of nanostructures patterned by directed self assembly

The directed self-assembly (DSA) of block copolymers (BCP) is an emerging resolution enhancement tool that can multiply or subdivide the pitch of a lithographically defined chemical or topological pattern and is a resolution enhancement candidate to augment conventional lithography for patterning sub-20 nm features. Continuing the development of this technology will require an improved understanding of the polymer physics involved as well as experimental confirmation of the simulations used to guide the design process. Both of these endeavors would be greatly facilitated by a metrology, which is capable of probing the internal morphology of a DSA film. We have developed a new measurement technique, resonant critical-dimension small-angle X-ray scattering (res-CDSAXS), to evaluate the 3D buried features inside the film. This is an X-ray scattering measurement where the sample angle is varied to probe the 3D structure of the film, while resonant soft X-rays are used to enhance the scattering contrast. By measuring the same sample with both res-CDSAXS and traditional CDSAXS (with hard X-rays), we are able to demonstrate the dramatic improvement in scattering obtained through the use of resonant soft X-rays. Analysis of the reciprocal space map constructed from the res-CDSAXS measurements allowed us to reconstruct the complex buried features in DSA BCP films. We studied a series of DSA BCP films with varying template widths, and the internal morphologies for these samples were compared to the results of single chain in mean-field simulations. The measurements revealed a range of morphologies that occur with changing template width, including results that suggest the presence of mixed morphologies composed of both whole and necking lamella. The development of res-CDSAXS will enable a better understanding of the fundamental physics behind the formation of buried features in DSA BCP films.

Fabrication of ordered, large scale, horizontally-aligned si nanowire arrays based on an in situ hard mask block copolymer approach

A simple technique is demonstrated to fabricate horizontal, uniform, and hexagonally arranged Sinanowire arrays with controlled orientation and density at spatially well defined locations on a substrate based on an in situ hard-mask pattern-formation approach by microphase-separated block-copolymer thin films. The technique may have significant application in the manufacture of transistor circuitry.