Solution synthesis of ultrathin single-crystalline SnS nanoribbons for photodetectors via phase transition and surface processing

Germanium and Tin Precursors for Chalcogenide Materials Containing N-Alkoxy Thioamide Ligands

This study describes the synthesis of germanium and tin complexes Ge(mdpaS)2 (1), Ge(edpaS)2 (2), Ge(bdpaS)2 (3), Ge(empaS)2 (4), Sn(mdpaS)2 (5), Sn(edpaS)2 (6), Sn(bdpaS)2 (7), and Sn(empaS)2 (8) (mdpaSH = (Z)-N-methoxy-2,2-dimethylpropanimidothioic acid; edpaSH = (Z)-N-ethoxy-2,2-dimethylpropanimidothioic acid; bdpaSH = (Z)-N-(tert-butoxy)-2,2-dimethylpropanimidothioic acid; empaSH = (Z)-N-ethoxy-2-methylpropanimidothioic acid), using newly designed N-alkoxy thioamide ligands as precursors for metal chalcogenide materials. All complexes were characterized using various analytical techniques, and the single-crystal structures of complexes 5 and 7 revealed a distorted seesaw geometry in the monomeric SnL2 form. Thermogravimetric (TG) curves showed differences between Ge compounds, which exhibited single-step weight losses, and Sn compounds, which exhibited multistep weight losses. As a result, we suggest that the synthesized complexes 1-8 are potential precursors for group IV metal chalcogenide materials.

Gas Sensing Properties of PLD Grown 2D SnS Film: Effect of Film Thickness, Metal Nanoparticle Decoration, and In Situ KPFM Investigation

This study employs novel growth methodologies and surface sensitization with metal nanoparticles to enhance and manipulate gas sensing behavior of two-dimensional (2D)SnS film. Growth of SnS films is optimized by varying substrate temperature and laser pulses during pulsed laser deposition (PLD). Thereafter, palladium (Pd), gold (Au), and silver (Ag) nanoparticles are decorated on as-grown film using gas-phase synthesis techniques. X-ray diffraction (XRD), Raman spectroscopy, and Field-emission scanning electron microscopy (FESEM) elucidate the growth evolution of SnS and the effect of nanoparticle decoration. X-ray photoelectron spectroscopy (XPS) analyses the chemical state and composition. Pristine SnS, Ag, and Au decorated SnS films are sensitive and selective toward NO2 at room temperature (RT). Ag nanoparticle increases the response of pristine SnS from 48 to 138% toward 2 ppm NO2, which indicates electronic and chemical sensitization effect of Ag. Pd decoration on SnS tunes its selectivity toward H2 gas with a response of 55% toward 70 ppm H2 and limit of detection (LOD) < 1 ppm. In situ Kelvin probe force microscopy (KPFM) maps the work function changes, revealing catalytic effect of Ag toward NO2 in Ag-decorated SnS and direct charge transfer between Pd and SnS during H2 exposure in Pd-decorated SnS.

The effect of ligands on the size distribution of copper nanoclusters: Insights from molecular dynamics simulations

Controlling the size distribution in the nucleation of copper particles is crucial for achieving nanocrystals with desired physical and chemical properties. However, their synthesis involves a complex system of solvents, ligands, and copper precursors with intertwining effects on the size of the nanoclusters. We combine molecular dynamics simulations and density functional theory calculations to provide insights into the nucleation mechanism in the presence of a triphenyl phosphite ligand. We identify the crucial role of the strength of the metal-phosphine interaction in inhibiting the cluster's growth. We demonstrate computationally several practical routes to fine-tune the interaction strength by modifying the side groups of the additive. Our work provides molecular insights into the complex nucleation process of protected copper nanocrystals, which can assist in controlling their size distribution and, eventually, their morphology.

High-Pressure Synthesis of Single-Crystalline SnS Nanoribbons

Two-dimensional tin monosulfide (SnS) is attractive for the development of electronic and optoelectronic devices with anisotropic characteristics. However, its shape-controlled synthesis with an atomic thickness and high quality remains challenging. Here, we show that highly crystalline SnS nanoribbons can be produced via high-pressure (0.5 GPa) and thermal treatment (400 °C). These SnS nanoribbons have a length of several tens of micrometers and a thickness down to 5.8 nm, giving an average aspect ratio of ∼30.6. The crystal orientation along the zigzag direction and the in-plane structural anisotropy of the SnS nanoribbons are identified by transmission electron microscopy and polarized Raman spectroscopy, respectively. An ionic liquid-gated field-effect transistor fabricated using the SnS nanoribbon exhibits an on/off current ratio of >103 and a field-effect mobility of ∼0.7 cm2 V-1 s-1. This work provides a unique way to achieve one-dimensional growth of SnS.

Real-time monitoring of phase transitions in π-SnS nanoparticles

While the new cubic phase of tin monosulfide, π-SnS, shows potential for various applications, not much work was focused on the phase transitions, thermal stability, and thermal properties of π-SnS. In this work, we addressed these issues using temperature-resolved in situ X-ray diffraction combined with thermo-gravimetric differential scanning calorimetry and thermo-gravimetric infrared spectroscopy. The cubic π-SnS phase nanoparticles capped with polyvinylpyrrolidone were proven stable for 12 hours at 400 °C, pointing out the possible utilization of this new cubic phase at elevated temperatures. At the same time, heating above this temperature resulted in a phase transition to the high-temperature orthorhombic β-SnS phase. Subsequent cooling to room temperature led to an additional phase transition to the stable orthorhombic α-SnS phase. Interestingly, heating-induced phase transformation of π-SnS nanoparticles always resulted in β-SnS, even at temperatures below the α- to β-SnS equilibrium transition temperature. It was shown that surfactant decomposition and evaporation triggers the phase transition. Several thermal parameters were calculated, including the phase transition activation energy and the thermal expansion of the unit cell parameter of π-SnS.

Record-High Work-Function p-Type CuBiP2 Se6 Atomic Layers for High-Photoresponse van der Waals Vertical Heterostructure Phototransistor

The notable lack of intrinsic p-type 2D layered semiconductors has hindered the engineering of 2D devices for complementary metal oxide semiconductors (CMOSs). Herein, a novel quaternary intrinsic p-type 2D semiconductor, CuBiP₂ Se₆ atomic layers, is introduced into the 2D family. The semiconductor displays a high work function of 5.26 eV, a moderate hole mobility of 1.72 cm² V^-1 s^-1 , and an ultrahigh on/off current exceeding 10⁶ at room temperature. To date, 5.26 eV is the highest work-function recorded in p-type 2D materials, indicating the ultrastable p-type behavior of CuBiP₂ Se₆ . Additionally, a multilayer graphene/CuBiP₂ Se₆ /multilayer graphene (MLG/CBPS/MLG)-based fully vertical van der Waals heterostructure phototransistor is designed and fabricated. This device exhibits outstanding optoelectronic performance with a responsivity (R) of 4.9 × 10⁴ A W^-1 , an external quantum efficiency (EQE) of 1.5 × 10⁷ %, a detectivity (D) of 1.14 × 10¹³ Jones, and a broad working wavelength (400-1100 nm), respectively. This is comparable to state-of-the-art 2D devices. Such excellent performance is attributed to the ultrashort transmit length and nondestructive/defect-free contacts. This leads to faster response speed and eliminates Fermi-level pinning effects. Moreover, ultrahigh responsivity and detectivity endow the device with applaudable imaging sensing capability. These results make CuBiP₂ Se₆ an ideal p-type candidate material for next-generation CMOSs logic devices.

Anisotropic Heavy-Metal-Free Semiconductor Nanocrystals: Synthesis, Properties, and Applications

Heavy-metal (Cd, Hg, and Pb)-containing semiconductor nanocrystals (NCs) have been explored widely due to their unique optical and electrical properties. However, the toxicity risks of heavy metals can be a drawback of heavy-metal-containing NCs in some applications. Anisotropic heavy-metal-free semiconductor NCs are desirable replacements and can be realized following the establishment of anisotropic growth mechanisms. These anisotropic heavy-metal-free semiconductor NCs can possess lower toxicity risks, while still exhibiting unique optical and electrical properties originating from both the morphological and compositional anisotropy. As a result, they are promising light-emitting materials in use various applications. In this review, we provide an overview on the syntheses, properties, and applications of anisotropic heavy-metal-free semiconductor NCs. In the first section, we discuss hazards of heavy metals and introduce the typical heavy-metal-containing and heavy-metal-free NCs. In the next section, we discuss anisotropic growth mechanisms, including solution-liquid-solid (SLS), oriented attachment, ripening, templated-assisted growth, and others. We discuss mechanisms leading both to morphological anisotropy and to compositional anisotropy. Examples of morphological anisotropy include growth of nanorods (NRs)/nanowires (NWs), nanotubes, nanoplatelets (NPLs)/nanosheets, nanocubes, and branched structures. Examples of compositional anisotropy, including heterostructures and core/shell structures, are summarized. Third, we provide insights into the properties of anisotropic heavy-metal-free NCs including optical polarization, fast electron transfer, localized surface plasmon resonances (LSPR), and so on, which originate from the NCs' anisotropic morphologies and compositions. Finally, we summarize some applications of anisotropic heavy-metal-free NCs including catalysis, solar cells, photodetectors, lighting-emitting diodes (LEDs), and biological applications. Despite the huge progress on the syntheses and applications of anisotropic heavy-metal-free NCs, some issues still exist in the novel anisotropic heavy-metal-free NCs and the corresponding energy conversion applications. Therefore, we also discuss the challenges of this field and provide possible solutions to tackle these challenges in the future.

Phase-Controllable Growth of Air-Stable SnS Nanostructures for High-Performance Photodetectors with Ultralow Dark Current

The epitaxial growth of low-dimensional tin chalcogenides SnX (X = S, Se) with a controlled crystal phase is of particular interest since it can be utilized to tune optoelectronic properties and exploit potential applications. However, it still remains a great challenge to synthesize SnX nanostructures with the same composition but different crystal phases and morphologies. Herein, we report a phase-controlled growth of SnS nanostructures via physical vapor deposition on mica substrates. The phase transition from α-SnS (Pbnm) nanosheets to β-SnS (Cmcm) nanowires can be tailored by the reduction of growth temperature and precursor concentration, which originates from a delicate competition between SnS-mica interfacial coupling and phase cohesive energy. The phase transition from the α to β phase not only greatly improves the ambient stability of SnS nanostructures but also leads to the band gap reduction from 1.03 to 0.93 eV, which is responsible for fabricated β-SnS devices with an ultralow dark current of 21 pA at 1 V, an ultrafast response speed of ≤14 μs, and broadband spectra response from the visible to near-infrared range under ambient condition. A maximum detectivity of the β-SnS photodetector arrives at 2.01 × 108 Jones, which is about 1 or 2 orders of magnitude larger than that of α-SnS devices. This work provides a new strategy for the phase-controlled growth of SnX nanomaterials for the development of highly stable and high-performance optoelectronic devices.

Low-pressure PVD growth SnS/InSe vertical heterojunctions with type-II band alignment for typical nanoelectronics

Two-dimensional (2D) polarization-sensitive detection as a new photoelectric application technology is extensively investigated. However, most devices are mainly based on individual anisotropic materials, which suffer from large dark current and relatively low anisotropic ratio, limiting the practical application in polarized imaging system. Herein, we design a van der Waals (vdWs) p-type SnS/n-type InSe vertical heterojunction with proposed type-II band alignment via low-pressure physical vapor deposition (LPPVD) and dry transfer method. The performance compared with the distinctive thickness of anisotropic SnS component was first studied. The fabricated device with a thick (80 nm) SnS nanosheet exhibits a larger rectification ratio exceeding 10³. Moreover, the SnS/InSe heterostructure shows a broadband spectral photoresponse from 405 to 1100 nm with a significant photovoltaic effect. Due to efficient photogenerated carrier separation across the wide depletion region at zero bias, the device with thinner (12.4 nm) SnS exhibits trade-off photoresponse performance with a maximum responsivity of 215 mA W^-1, an external quantum efficiency of 42.2%, specific detectivity of 1.05 × 10¹⁰ Jones, and response time of 8.6/4.2 ms under 635 nm illumination, respectively. In contrast, benefiting from the stronger in-plane anisotropic structure of thinner SnS component, the device delivers a large photocurrent anisotropic ratio of 4.6 under 635 nm illumination in a zigzag manner. Above all, our work provides a new design scheme for multifunctional optoelectronic applications based on thickness-dependent 2D vdWs heterostructures.

Construction and physical properties of low-dimensional structures for nanoscale electronic devices

Over the past decades, construction of nanoscale electronic devices with novel functionalities based on low-dimensional structures, such as single molecules and two-dimensional (2D) materials, has been rapidly developed. To investigate their intrinsic properties for versatile functionalities of nanoscale electronic devices, it is crucial to precisely control the structures and understand the physical properties of low-dimensional structures at the single atomic level. In this review, we provide a comprehensive overview of the construction of nanoelectronic devices based on single molecules and 2D materials and the investigation of their physical properties. For single molecules, we focus on the construction of single-molecule devices, such as molecular motors and molecular switches, by precisely controlling their self-assembled structures on metal substrates and charge transport properties. For 2D materials, we emphasize their spin-related electrical transport properties for spintronic device applications and the role that interfaces among 2D semiconductors, contact electrodes, and dielectric substrates play in the electrical performance of electronic, optoelectronic, and memory devices. Finally, we discuss the future research direction in this field, where we can expect a scientific breakthrough.

Imaging Anisotropic Waveguide Exciton Polaritons in Tin Sulfide

In recent years, novel materials supporting in-plane anisotropic polaritons have attracted a great deal of research interest due to their capability of shaping nanoscale field distributions and controlling nanophotonic energy flows. Here we report a nano-optical imaging study of waveguide exciton polaritons (EPs) in tin sulfide (SnS) in the near-infrared (near-IR) region using scattering-type scanning near-field optical microscopy (s-SNOM). With s-SNOM, we mapped in real space the propagative EPs in SnS, which show sensitive dependence on the excitation energy and sample thickness. Moreover, we found that both the polariton wavelength and propagation length are anisotropic in the sample plane. In particular, in a narrow spectral range from 1.32 to 1.44 eV, the EPs demonstrate quasi-one-dimensional propagation, which is rarely seen in natural polaritonic materials. A further analysis indicates that the observed polariton anisotropy originates from the different optical band gaps and exciton binding energies along the two principal crystal axes of SnS.

Small-diameter p-type SnS nanowire photodetectors and phototransistors with low-noise and high-performance

P-type nanostructured photodetectors and phototransistors have been widely used in the field of photodetection due to their excellent electrical and optoelectronic characteristics. However, the large dark current of p-type photodetectors will limit the detectivity. Herein, we synthesized small-diameter single-crystalline p-type SnS nanowires (NWs) and then fabricated single SnS NW photodetectors and phototransistors. The device exhibits low noise and low dark current, and its noise current power is as low as 2.4 × 10^-28A². Under 830 nm illumination and low power density of 0.12 mW cm^-2, the photoconductive gain, responsivity and detectivity of the photodetector are as high as 3.9 × 10², 2.6 × 10²A W^-1and 1.8 × 10¹³Jones, respectively, at zero gate voltage. The rise and fall time of response are about 9.6 and 14 ms. The experimental results show that the small-diameter p-type SnS NWs have broad application prospects in high-performance and low-power photodetectors with high sensitivity, fast response speed and wide spectrum detection in the future.

Solution phase growth and analysis of super-thin zigzag tin selenide nanoribbons

Tin selenide (SnSe), a highly promising layered material, has been garnering particular interest in recent times due to its significant promise for future energy devices. Herein we report a simple solution-phase approach for growing highly crystalline layered SnSe nanoribbons. Polyvinylpyrrolidone (PVP) was used as a templating agent to selectively passivates the (100) and (001) facets of the SnSe nanoribbons resulting in the unique growth of nanoribbons along theirb-axis with a defined zigzag edge state along the sidewalls. The SnSe nanoribbons are few layers thick (∼20 layers), with mean widths of ∼40 nm, and achievable length of >1μm. Nanoribbons could be produced in relatively high quantities (>150 mg) in a single batch experiment. The PVP coating also offers some resistance to oxidation, with the removal of the PVP seen to lead to the formation of a SnSe/SnO_xcore-shell structure. The use of non-toxic PVP to replace toxic amines that are typically employed for other 1D forms of SnSe is a significant advantage for sustainable and environmentally friendly applications. Heat transport properties of the SnSe nanoribbons, derived from power-dependent Raman spectroscopy, demonstrate the potential of SnSe nanoribbons as thermoelectric material.

Extended anisotropic phonon dispersion and optical properties of two-dimensional ternary SnSSe

The phonon dispersion and optical properties of mechanically exfoliated SnSSe were investigated with the aid of high-resolution Raman scattering and photoluminescence (PL) spectroscopies along with first-principles calculations.

Dimension effect on ferroelectricity: a first-principles study on GeS nanoribbons

Low-dimensional ferroelectricity has attracted enormous attention due to its applications in miniaturized devices and understanding the dimension effect on ferroelectricity is of significant importance. Based on first-principles calculations, we have investigated the dimension effect on the ferroelectricity of group-IV monochalcogenide MX nanoribbons. Our results reveal that H-terminated armchair GeSNRs exhibit large in-plane polarization along the ribbon direction which converges to the value of 2D GeS as the width increases, while out-of-plane polarization only arises in those with n = odd number. Interestingly, for bare A-GeSNRs, the structure with small n transforms into a paraelectric phase and the critical width for the PE/FE transition is calculated to be n = 10. On the side of zigzag GeSNRs, H-terminated ribbons possess polarization along both the out-of-plane and width directions, while bare Z-GeSNRs are expected to be polar ferromagnetic metals.

Core@shell and lateral heterostructures composed of SnS and NbS2

The spatial arrangement of heterostructures based on two-dimensional layered materials is important in controlling their electronic and optoelectronic properties. In this contribution, by controlling the reaction kinetics and thus the nucleation and growth sequence of p-type SnS and metallic NbS2, controllable preparation of both SnS@NbS2 core@shell and SnS/NbS2 lateral heterostructures was realized. The SnS@NbS2 core@shell heterostructures were further applied in photodetectors, and interestingly, a negative photoresponse was observed due to the Seebeck effect exerted on the NbS2 shell. Compared with the pure metallic NbS2, the SnS@NbS2 core@shell heterostructures showed a 15 times increased signal-to-noise ratio and much improved photocurrent stability, largely due to the charge and heat transfer between the SnS core and NbS2 shell.

A Review of the Synthesis, Properties, and Applications of Bulk and Two-Dimensional Tin (II) Sulfide (SnS)

Tin(II) sulfide (SnS) is an attractive semiconductor for solar energy conversion in thin film devices due to its bandgap of around 1.3 eV in its orthorhombic polymorph, and a band gap energy of 1.5–1.7 eV for the cubic polymorph—both of which are commensurate with efficient light harvesting, combined with a high absorption coefficient (10−4 cm−1) across the NIR–visible region of the electromagnetic spectrum, leading to theoretical power conversion efficiencies >30%. The high natural abundance and a relative lack of toxicity of its constituent elements means that such devices could potentially be inexpensive, sustainable, and accessible to most nations. SnS exists in its orthorhombic form as a layer structure similar to black phosphorus; therefore, the bandgap energy can be tuned by thinning the material to nanoscale dimensions. These and other properties enable SnS applications in optoelectronic devices (photovoltaics, photodetectors), lithium- and sodium-ion batteries, and sensors among others with a significant potential for a variety of future applications. The synthetic routes, structural, optical and electronic properties as well as their applications (in particular photonic applications and energy storage) of bulk and 2D tin(II) sulfide are reviewed herein.

Large Bulk Piezophotovoltaic Effect of Monolayer 2H-MoS2

The bulk photovoltaic effect in noncentrosymmetric materials is an intriguing physical phenomenon that holds potential for high-efficiency energy harvesting. Here, we study the shift current bulk photovoltaic effect in the transition-metal dichalcogenide MoS₂. We present a simple automated method to guide materials design and use it to uncover a distortion to monolayer 2H-MoS₂ that dramatically enhances the integrated shift current. Using this distortion, we show that overlap in the Brillouin zone of the distributions of the shift vector (a quantity measuring the net displacement in real space of coherent wave packets during excitation) and the transition intensity is crucial for increasing the shift current. The distortion pattern is related to the material polarization and can be realized through an applied electric field via the converse piezoelectric effect. This finding suggests an additional method for engineering the shift current response of materials to augment previously reported methods using mechanical strain.

Liquid-Metal Synthesized Ultrathin SnS Layers for High-Performance Broadband Photodetectors

Atomically thin materials face an ongoing challenge of scalability, hampering practical deployment despite their fascinating properties. Tin monosulfide (SnS), a low-cost, naturally abundant layered material with a tunable bandgap, displays properties of superior carrier mobility and large absorption coefficient at atomic thicknesses, making it attractive for electronics and optoelectronics. However, the lack of successful synthesis techniques to prepare large-area and stoichiometric atomically thin SnS layers (mainly due to the strong interlayer interactions) has prevented exploration of these properties for versatile applications. Here, SnS layers are printed with thicknesses varying from a single unit cell (0.8 nm) to multiple stacked unit cells (≈1.8 nm) synthesized from metallic liquid tin, with lateral dimensions on the millimeter scale. It is reveal that these large-area SnS layers exhibit a broadband spectral response ranging from deep-ultraviolet (UV) to near-infrared (NIR) wavelengths (i.e., 280-850 nm) with fast photodetection capabilities. For single-unit-cell-thick layered SnS, the photodetectors show upto three orders of magnitude higher responsivity (927 A W^-1 ) than commercial photodetectors at a room-temperature operating wavelength of 660 nm. This study opens a new pathway to synthesize reproduceable nanosheets of large lateral sizes for broadband, high-performance photodetectors. It also provides important technological implications for scalable applications in integrated optoelectronic circuits, sensing, and biomedical imaging.

Remarkably efficient charge transfer through a double heterojunction mechanism by a CdS-SnS-SnS2/rGO composite with excellent photocatalytic performance under visible light

In this work, a novel CdS-SnS-SnS₂/rGO photocatalyst with two tin valence states (Ⅱ and IV) was successfully synthesized by a one-pot solvothermal method. For comparison, CdS-SnS₂/rGO (GCS2) with tin in only the IV valence state was made by the same method. Based on a series of characterizations, CdS, SnS and SnS₂ were shown to be successfully loaded onto the rGO surface. The introduction of rGO may increase charge carrier separation. The degradation efficiency increased gradually with increasing rGO loading content, and the optimum photocatalytic activity was observed at 6.0 wt% rGO loading content (GCS1), which achieved the efficient removal (84.46%) of ibuprofen over 60 min. Compared with GCS2, the CdS-SnS-SnS₂/rGO composite exhibited significantly improved photocatalytic performance, which can be ascribed to the formation of a double heterostructure. rGO worked as a transfer mediator to transfer electrons from the conduction band (CB) of SnS to the CB of SnS₂ at the heterointerface, which then flowed to the CB of CdS because of another heterojunction, further enhancing the separation efficiency of photogenerated carriers. Therefore, this study highlights a novel double heterojunction system with a facial preparation method, visible light response and good recyclability, which is beneficial for environmental remediation.

Direct synthesis of metastable phases of 2D transition metal dichalcogenides

The different polymorphic phases of transition metal dichalcogenides (TMDs) have attracted enormous interest in the last decade. The metastable metallic and small band gap phases of group VI TMDs displayed leading performance for electrocatalytic hydrogen evolution, high volumetric capacitance and some of them exhibit large gap quantum spin Hall (QSH) insulating behaviour. Metastable 1T(1T') phases require higher formation energy, as compared to the thermodynamically stable 2H phase, thus in standard chemical vapour deposition and vapour transport processes the materials normally grow in the 2H phases. Only destabilization of their 2H phase via external means, such as charge transfer or high electric field, allows the conversion of the crystal structure into the 1T(1T') phase. Bottom-up synthesis of materials in the 1T(1T') phases in measurable quantities would broaden their prospective applications and practical utilization. There is an emerging evidence that some of these 1T(1T') phases can be directly synthesized via bottom-up vapour- and liquid-phase methods. This review will provide an overview of the synthesis strategies which have been designed to achieve the crystal phase control in TMDs, and the chemical mechanisms that can drive the synthesis of metastable phases. We will provide a critical comparison between growth pathways in vapour- and liquid-phase synthesis techniques. Morphological and chemical characteristics of synthesized materials will be described along with their ability to act as electrocatalysts for the hydrogen evolution reaction from water. Phase stability and reversibility will be discussed and new potential applications will be introduced. This review aims at providing insights into the fundamental understanding of the favourable synthetic conditions for the stabilization of metastable TMD crystals and at stimulating future advancements in the field of large-scale synthesis of materials with crystal phase control.

Amide-Assisted Synthesis of Iron Germanium Sulfide (Fe2GeS4) Nanostars: The Effect of LiN(SiMe3)2 on Precursor Reactivity for Favoring Nanoparticle Nucleation or Growth

Olivine Fe₂GeS₄ has been identified as a promising photovoltaic absorber material introduced as an alternate candidate to iron pyrite, FeS₂. The compounds share similar benefits in terms of elemental abundance and relative nontoxicity, but Fe₂GeS₄ was predicted to have higher stability with respect to decomposition to alternate phases and, therefore, more optimal device performance. Our initial report of the nanoparticle (NP) synthesis for Fe₂GeS₄ was not well understood and required an inefficient 24 h growth to dissolve an iron sulfide impurity. Here, we report an amide-assisted Fe₂GeS₄ NP synthesis that directly forms the phase-pure product in minutes. This significant advance was achieved by the replacement of the poorly understood hexamethyldisilazane (HMDS) additive and TMS₂S by the conjugate base, lithium bis(trimethylsilyl)amide (LiN(SiMe₃)₂), and elemental S, respectively. We hypothesized that fragments of both TMS₂S and HMDS had carried out the roles that Brønsted bases play in amide-assisted NP syntheses and were necessary for Ge incorporation. Convolution of this role with the supply of S in TMS₂S caused the iron sulfide impurities. Separating these effects in the use of LiN(SiMe₃)₂ and elemental S resulted in synthetic control over the ternary phase. Herein we explore the Fe-Ge-S reaction landscape and the role of the base. Its concentration was found to increase the reactivities of the Fe, Ge, and S precursors, and we discuss possible metal-amide intermediates. This affords tunability in two areas: favorability of NP nucleation versus growth and phase formation. The phase-purity of Fe₂GeS₄ depends on the molar ratios of the cations, base, and amine as well as the Fe:Ge:S molar ratios. The resultant Fe₂GeS₄ NPs exhibit an interesting star anise-like morphology with stacks of nanoplates that intersect along a 6-fold rotation axis. The optical properties of the Fe₂GeS₄ NPs are consistent with previously published measurements showing a measured band gap of 1.48 eV.

Anisotropic circular photogalvanic effect in colloidal tin sulfide nanosheets

Tin sulfide promises very interesting properties such as a high optical absorption coefficient and a small band gap, while being less toxic compared to other metal chalcogenides. However, the limitations in growing atomically thin structures of tin sulfide hinder the experimental exploration of these properties. Due to the flexibility of the colloidal synthesis, it is possible to synthesize very thin and at the same time large nanosheets. Electrical transport measurements show that these nanosheets can function as field-effect transistors with an on/off ratio of more than 105 at low temperatures and p-type behavior. The temperature dependency of the charge transport reveals that defects in the crystal are responsible for the formation of holes as majority carriers. During illumination with circularly polarized light, these crystals generate a helicity dependent photocurrent at zero-volt bias, since their symmetry is broken by asymmetric interfaces (substrate and vacuum). Further, the observed circular photogalvanic effect shows a pronounced in-plane anisotropy, with a higher photocurrent along the armchair direction, originating from the higher absorption coefficient in this direction. Our new insights show the potential of tin sulfide for new functionalities in electronics and optoelectronics, for instance as polarization sensors.

Surface/Interface Engineering for Constructing Advanced Nanostructured Photodetectors with Improved Performance: A Brief Review

Semiconductor-based photodetectors (PDs) convert light signals into electrical signals via a photon–matter interaction process, which involves surface/interface carrier generation, separation, and transportation of the photo-induced charge media in the active media, as well as the extraction of these charge carriers to external circuits of the constructed nanostructured photodetector devices. Because of the specific electronic and optoelectronic properties in the low-dimensional devices built with nanomaterial, surface/interface engineering is broadly studied with widespread research on constructing advanced devices with excellent performance. However, there still exist some challenges for the researchers to explore corresponding mechanisms in depth, and the detection sensitivity, response speed, spectral selectivity, signal-to-noise ratio, and stability are much more important factors to judge the performance of PDs. Hence, researchers have proposed several strategies, including modification of light absorption, design of novel PD heterostructures, construction of specific geometries, and adoption of specific electrode configurations to modulate the charge-carrier behaviors and improve the photoelectric performance of related PDs. Here, in this brief review, we would like to introduce and summarize the latest research on enhancing the photoelectric performance of PDs based on the designed structures by considering their surface/interface engineering and how to obtain advanced nanostructured photo-detectors with improved performance, which could be applied to design and fabricate novel low-dimensional PDs with ideal properties in the near future.

High-performance humidity sensor using Schottky-contacted SnS nanoflakes for noncontact healthcare monitoring

Humidity sensors based on flexible sensitive nanomaterials are very attractive in noncontact healthcare monitoring. However, the existing humidity sensors have some shortcomings such as limited sensitivity, narrow relative humidity (RH) range, and a complex process. Herein, we show that a tin sulphide (SnS) nanoflakes-based sensor presents high humidity sensing behaviour both in rigid and flexible substrate. The sensing mechanism based on the Schottky nature of a SnS-metal contact endows the as-fabricated sensor with a high response of 2491000% towards a wide RH range from 3% RH to 99% RH. The response and recovery time of the sensor are 6 s and 4 s, respectively. Besides, the flexible SnS nanoflakes-based humidity sensor with a polyimide substrate can be well attached to the skin and exhibits stable humidity sensing performance in the natural flat state and under bending loading. Moreover, the first-principles analysis is performed to prove the high specificity of SnS to the moisture (H₂O) in the air. Benefiting from its promising advantages, we explore some application of the SnS nanoflakes-based sensors in detection of breathing patterns and non-contact finger tips sensing behaviour. The sensor can monitor the respiration pattern of a human being accurately, and recognize the movement of the fingertip speedily. This novel humidity sensor shows great promising application in physiological and physical monitoring, portable diagnosis system, and noncontact interface localization.

Self-Powered SnS1-xSex Alloy/Silicon Heterojunction Photodetectors with High Sensitivity in a Wide Spectral Range

Alloy engineering and heterostructures designing are two efficient methods to improve the photosensitivity of two-dimensional (2D) material-based photodetectors. Herein, we report the first-principle calculation about the band structure of SnS_1-xSe_x (0 ≤ x ≤ 1) and synthesize these alloy nanosheets. Systematic measurements indicate that SnS_0.25Se_0.75 exhibits the highest hole mobility (0.77 cm²·V^-1·s^-1) and a moderate photoresponsivity (4.44 × 10² A·W^-1) with fast response speed (32.1/57.5 ms) under 635 nm irradiation. Furthermore, to reduce the dark current and strengthen the light absorption, a self-driven SnS_0.25Se_0.75/n-Si device has been fabricated. The device achieved a preeminent photo-responsivity of 377 mA·W^-1, a detectivity of ∼10¹¹ Jones and I_light/I_dark ratio of ∼4.5 × 10². In addition, the corresponding rising/decay times are as short as 4.7/3.9 ms. Moreover, a broadband sensitivity from 635 to 1200 nm is obtained and the related photoswitching curves are stable and reproducibility. Noticeably, the above parameters are comparable or superior to the most of reported group IV_A layered materials-based self-driven photodetectors. Last, the synergistic effects between the SnS_0.25Se_0.75 nanosheets and the n-Si have been discussed by the band alignment. These brilliant results will pave a new pathway for the development of next generation 2D alloy-based photoelectronic devices.

Stability of cubic tin sulphide nanocrystals: role of ammonium chloride surfactant headgroups

New semiconducting metastable cubic phases have been recently discovered in the tin monosulfide and monoselenide systems. Surface energy calculations and experimental studies indicate that this cubic π-phase is stabilized by specific ligand adsorption on the surface. In this work, it is shown experimentally that the synthesis carried out using mixtures of oleylamine and oleylammonium chloride (OACl) surfactants results in the cubic phase, transforming the growth from orthorhombic to cubic nanoparticles with increasing OACl concentration up to a limiting point. Complementary ab initio calculations find that adsorbed ligands lower the surface energies for both the cubic phase and the orthorhombic phase, relative to the pristine surfaces. The decrease in the surface energy increases with ligand coverage. Stronger binding energies to the cubic phase suggest a higher coverage, and therefore preferential stabilization of this phase. Upon further increasing the coverage, the surface energy becomes negative, effectively destabilizing the particles in agreement with experimental observations. Bonding analysis shows that Cl bonds to Sn and replaces missing Sn-S bonds at the surface of the cubic structure. In the competing orthorhombic layered phase, Cl also bonds to a Sn atom but at the expense of one of the Sn-S bonds of this Sn atom. This observation can explain the trends of the surface energies. This combined experimental and computational analysis sheds light on the stabilization processes of these nano-materials and indicates the path to improve synthetic routes.

Quantum confinement in few layer SnS nanosheets

Orthorhombic tin monosulfide (SnS) consists of layers of covalently bound Sn and S atoms held together by weak van der Waals forces and is a stable two-dimensional material with potentially useful properties in emerging applications such as valleytronics. Large-scale sustainable synthesis of few-layer (e.g., 1-10 layers) SnS is a challenge, which also slows progress in understanding their properties as a function of number of layers. Herein we describe solvothermal synthesis of SnS in water or ethylene glycol. The latter yields a flower-like morphology where the petals are SnS nanoplates and sonication and separation of these flowers via differential centrifugation yields 1-10 layer SnS nanoplates. The direct optical absorption edges of these SnS nanoplates blue-shift due to quantum confinement from 1.33 to 1.88 eV as the thickness (number of layers) is decreased from ∼5 nm (10 layers) to ∼2 nm (4 layers).

Facile Chemical Bath Synthesis of SnS Nanosheets and Their Ethanol Sensing Properties

Tin(II) monosulfide (SnS) nanosheets were synthesized using SnCl₄•5H₂O and S powders as raw materials in the presence of H₂O via a facile chemical bath method. Orthorhombic phase SnS nanosheets with a thickness of ~100 nm and lateral dimensions of 2~10 μm were obtained by controlling the synthesis parameters. The formation of a SnO₂ intermediate is key to the valence reduction of Sn ions (from IV to II) and the formation of SnS. The gas sensors fabricated from SnS nanosheets exhibited an excellent response of 14.86 to 100 ppm ethanol vapor when operating at 160 °C, as well as fast response and recovery times of 23 s and 26 s, respectively. The sensors showed excellent selectivity for the detection of ethanol over acetone, methanol, and ammonia gases, which indicates the SnS nanosheets are promising for high-performance ethanol gas sensing applications.

Effect of Temperature and Capping Agents on Structural and Optical Properties of Tin Sulphide Nanocrystals

SnS nanocrystals were synthesized using bis(phenylpiperazine dithiocarbamate)tin(II) in oleic acid (OA) and octadecylamine (ODA) at three different temperatures (150, 190, and 230°C). XRD diffraction pattern confirms that OASnS and ODASnS nanoparticles are in the orthorhombic phase and the type of capping agent used affects the crystallinity. Transmission electron microscopy (TEM) images shows spherically shaped nanocrystals for oleic acid capped SnS (OASnS) while octadecylamine (ODASnS) are cubic. Monodispersed SnS of size range 10.67–17.74 nm was obtained at 150°C for OASnS while the biggest-sized nanocrystals were obtained at 230°C for ODASnS. Temperature and capping agents tuned the crystallite sizes and shapes of the as-prepared nanocrystals. Electron dispersive X-ray spectroscopy indicates the formation of tin sulphide with the presence of Sn and S peaks in the nanocrystals. Flowery and agglomerated spherical-like morphology were observed for ODASnS and OASnS nanocrystals, respectively, using a SEM (scanning electron microscope). Direct electronic band gaps of the synthesized SnS nanocrystals are 1.71–1.95 eV and 1.93–2.81 eV for OASnS and ODASnS nanocrystals, respectively.

Liquid-phase exfoliated SnS as a semiconductor coating filler to enhance corrosion protection performance

This paper presents the anti-corrosion application of polyvinylbutyral/tin sulfide (PVB/SnS) composites for the first time, where the liquid-phase exfoliated (LPE) SnS nanosheets are uniformly embedded in the PVB matrix. The measurement results of the potentiodynamic polarization, the electrochemical impedance spectroscopy (EIS) and the scanning electronic microscopy (SEM) show that PVB/SnS composite coatings show the excellent corrosion protection behavior for copper under 3.0% NaCl solution. Besides, we investigated the anti-corrosion performance with different contents of SnS nanosheets. The results show that embedding 0.1 wt% SnS nanosheets in the PVB matrix can greatly improve the anti-corrosion properties of the coating due to the enhanced "Labyrinth effect" of the coatings. In addition, the results of the molecular dynamic analysis further show the high interaction energy between PVB/SnS composites and copper, which is attributed to the high aspect-ratio of LPE-SnS nanosheets. Moreover, the scratch tests reveal that the PVB/SnS composite coatings exhibit weak corrosion-promotion activity, indicating a promising potential application in the corrosion protection of the metal surface for ocean engineering. The methods for enhancing the inhibited corrosion-promotion activity of the semiconductor material SnS-based composite coatings could be expanded to other n-type and p-type semiconductors.

Hydrothermal synthesis of novel rhombic dodecahedral SnS nanocrystals for highly efficient photothermal therapy

Hydrothermal synthesis of novel rhombic dodecahedral SnS nanocrystals with a large extinction coefficient and a high photothermal conversion efficiency for photothermal therapy.

Self-passivated ultra-thin SnS layers via mechanical exfoliation and post-oxidation

Remarkable optical/electrical features are expected in two-dimensional group-IV monochalcogenides (MXs; M = Sn/Ge and X = S/Se) with a uniquely distorted layered structure. The lone pair electrons in the group-IV atoms are the origin of this structural distortion, while they also cause a strong interlayer force and high chemical reactivity. The fabrication of chemically stable few-to-monolayer MX has been a significant challenge. We have observed that, once the SnS surface is oxidized, the SnO_x top layer works as a passivation layer for the SnS layer underneath. In this work, the SnO_x/SnS hetero-structure is studied structurally, optically, and electrically. When tape-exfoliated bulk SnS is oxygen-annealed under a reduced pressure at 10 Pa, surface oxidation and SnS sublimation proceed simultaneously, resulting in a monolayer-thick SnS layer with the SnO_x passivation layer. The field-effect transistor of nine-layer SnS prepared via mechanical exfoliation exhibits a p-type characteristic because of intrinsic Sn vacancies, whereas ambipolar behavior is observed for the monolayer-thick SnS obtained via oxygen annealing probably owing to the additional n-type doping by S vacancies. This work on monolayer-thick SnS fabrication can be applied to other unstable lone pair analogues and can facilitate future research on MXs.

Recent advances in one-dimensional halide perovskites for optoelectronic applications

Metal-halide perovskites have emerged as efficient, low-cost energy materials owing to their remarkable optoelectronic properties. In particular, the dimensionality and morphology of crystallites may have a striking influence on their chemical and physical properties and therefore affect their optoelectronic applications. One-dimensional halide perovskites have superior carrier transportation in one dimension, high crystalline quality, and consequently, high quantum efficiencies and long carrier diffusion lengths, which are important for the performance of perovskite-based nanoscale optoelectronic and photonic devices. In this review, we highlight recent advances in the synthesis of one-dimensional halide perovskites and their unique properties as well as their novel optoelectronic applications. This review aims to provide an overview of the achievements in synthesis techniques and nanoscale optoelectronic applications based on one-dimensional perovskite nanocrystals.

Contact and Noncontact Measurement of Electronic Transport in Individual 2D SnS Colloidal Semiconductor Nanocrystals

Colloidal-based solution syntheses offer a scalable and cost-efficient means of producing 2D nanomaterials in high yield. While much progress has been made toward the controlled and tailorable synthesis of semiconductor nanocrystals in solution, it remains a substantial challenge to fully characterize the products' inherent electronic transport properties. This is often due to their irregular morphology or small dimensions, which demand the formation of colloidal assemblies or films as a prerequisite to performing electrical measurements. Here, we report the synthesis of nearly monodisperse 2D colloidal nanocrystals of semiconductor SnS and a thorough investigation of the intrinsic electronic transport properties of single crystals. We utilize a combination of multipoint contact probe measurements and ultrafast terahertz spectroscopy to determine the carrier concentration, carrier mobility, conductivity/resistivity, and majority carrier type of individual colloidal semiconductor nanocrystals. Employing this metrological approach, we compare the electronic properties extracted for distinct morphologies of 2D SnS and relate them to literature values. Our results indicate that the electronic transport of colloidal semiconductors may be tuned through prudent selection of the synthetic conditions. We find that these properties compare favorably to SnS grown using vapor deposition techniques, illustrating that colloidal solution synthesis is a promising route to scalable production of nanoscale 2D materials.

π-Phase Tin and Germanium Monochalcogenide Semiconductors: An Emerging Materials System

Cubic π-phase monochalcogenides (MX, M = Sn, Ge; X = S, Se) are an emerging new class of materials that has recently been discovered. Here, their thermodynamic stability, progress in synthetic routes, properties, and prospective applications are reviewed. The thermodynamic stability is demonstrated through density functional theory total energy and phonon spectra calculations, which show that the π-phase polytype is stable across the monochalcogenide family. To date, only π-phase tin monochalcogenides have been observed experimentally while π-phase Ge-monochalcogenides are predicted to be stable but are yet to be experimentally realized. Various synthetic preparation protocols of π-SnS and π-SnSe are described, focusing on surfactant-assisted nanoparticle synthesis and chemical deposition of thin films from aqueous-bath compositions. These techniques provide materials with different surface energies, which are likely to play a major role in stabilizing the π-phase in nanoscale materials. The properties of this newly discovered family of semiconducting materials are discussed in comparison with their conventional orthorhombic polymorphs. These could benefit a number of photovoltaic and optoelectronic applications since, apart from being cubic, they also possess characteristic advantages, such as moderately low toxicity and natural abundance.

Photoelectric Detectors Based on Inorganic p-Type Semiconductor Materials

Photoelectric detectors are the central part of modern photodetection systems with numerous commercial and scientific applications. p-Type semiconductor materials play important roles in optoelectronic devices. Photodetectors based on p-type semiconductor materials have attracted a great deal of attention in recent years because of their unique properties. Here, a comprehensive summary of the recent progress mainly on photodetectors based on inorganic p-type semiconductor materials is presented. Various structures, including photoconductors, phototransistors, homojunctions, heterojunctions, p-i-n junctions, and metal-semiconductor junctions of photodetectors based on inorganic p-type semiconductor materials, are discussed and summarized. Perspectives and an outlook, highlighting the promising future directions of this research field, are also given.

High-Performance Near-Infrared Photodetectors Based on p-Type SnX (X = S, Se) Nanowires Grown via Chemical Vapor Deposition

Because of the distinct electronic properties and strong interaction with light, quasi-one-dimensional nanowires (NWs) with semiconducting property have been demonstrated with tremendous potential for various technological applications, especially electronics and optoelectronics. However, until now, most of the state-of-the-art NW photodetectors are predominantly based on the n-type NW channel. Here, we successfully synthesized p-type SnSe and SnS NWs via the chemical vapor deposition method and fabricated high-performance single SnSe and SnS NW photodetectors. Importantly, these two NW devices exhibit an impressive photodetection performance with a high photoconductive gain of 1.5 × 10⁴ (2.8 × 10⁴), good responsivity of 1.0 × 10⁴ A W^-1 (1.6 × 10⁴ A W^-1), and excellent detectivity of 3.3 × 10¹² Jones (2.4 × 10¹² Jones) under near-infrared illumination at a bias of 3 V for the SnSe NW (SnS NW) channel. The rise and fall times can be as efficient as 460 and 520 μs (1.2 and 15.1 ms), respectively, for the SnSe NW (SnS NW) device. Moreover, the spatially resolved photocurrent mapping of the devices further reveals the bias-dependent photocurrent generation. All these results evidently demonstrate that the p-type SnSe and SnS NWs have great potential to be applied in next-generation high-performance optoelectronic devices.

Narrow-gap physical vapour deposition synthesis of ultrathin SnS1-xSex (0 ≤ x ≤ 1) two-dimensional alloys with unique polarized Raman spectra and high (opto)electronic properties

Here we report ultrathin SnS1-xSex alloyed nanosheets synthesized via a narrow-gap physical vapour deposition approach. The SnS1-xSex alloy presents a uniform quadrangle shape with a lateral size of 5-80 μm and a thickness of several nanometers. Clear orthorhombic symmetries and unique in-plane anisotropic properties of the 2D alloyed nanosheets were found with the help of X-ray diffraction, high resolution transmission electron microscopy and polarized Raman spectroscopy. Moreover, 2D alloyed field-effect transistors were fabricated, exhibiting a unipolar p-type semiconductor behavior. This study also provided a lesson that the thickness of the alloyed channels played the major role in the current on/off ratio, and the high ratio of 2.10 × 102 measured from a large ultrathin SnS1-xSex device was two orders of magnitude larger than that of previously reported SnS, SnSe nanosheet based transistors because of the capacitance shielding effect. Obviously enhanced Raman peaks were also found in the thinner nanosheets. Furthermore, the ultrathin SnS0.5Se0.5 based photodetector showed a highest responsivity of 1.69 A W-1 and a short response time of 40 ms under illumination of a 532 nm laser from 405 to 808 nm. Simultaneously, the corresponding highest external quantum efficiency of 392% and detectivity of 3.96 × 104 Jones were also achieved. Hopefully, the narrow-gap synthesis technique provides us with an improved strategy to obtain large ultrathin 2D nanosheets which may tend to grow into thicker ones for stronger interlayer van der Waals forces, and the enhanced physical and (opto)electrical performances in the obtained ultrathin SnS1-xSex alloyed nanosheets prove their great potential in the future applications for versatile devices.

Flexible and High-Performance All-2D Photodetector for Wearable Devices

Emerging novel applications at the forefront of innovation horizon raise new requirements including good flexibility and unprecedented properties for the photoelectronic industry. On account of diversity in transport and photoelectric properties, 2D layered materials have proven as competent building blocks toward next-generation photodetectors. Herein, an all-2D Bi₂ Te₃ -SnS-Bi₂ Te₃ photodetector is fabricated with pulsed-laser deposition. It is sensitive to broadband wavelength from ultraviolet (370 nm) to near-infrared (808 nm). In addition, it exhibits great durability to bend, with intact photoresponse after 100 bend cycles. Upon 370 nm illumination, it achieves a high responsivity of 115 A W^-1 , a large external quantum efficiency of 3.9 × 10⁴ %, and a superior detectivity of 4.1 × 10¹¹ Jones. They are among the best figures-of-merit of state-of-the-art 2D photodetectors. The synergistic effect of SnS's strong light-matter interaction, efficient carrier separation of Bi₂ Te₃ -SnS interface, expedite carrier injection across Bi₂ Te₃ -SnS interface, and excellent carrier collection of Bi₂ Te₃ topological insulator electrodes accounts for the superior photodetection properties. In summary, this work depicts a facile all-in-one fabrication strategy toward a Bi₂ Te₃ -SnS-Bi₂ Te₃ photodetector. More importantly, it reveals a novel all-2D concept for construction of flexible, broadband, and high-performance photoelectronic devices by integrating 2D layered metallic electrodes and 2D layered semiconducting channels.

Topotactic anion-exchange in thermoelectric nanostructured layered tin chalcogenides with reduced selenium content

Topotactic solution synthesis yields nanostructured tin chalcogenides, SnS_1–xSe_x with controllable composition; spark plasma sintered SnS_0.1Se_0.9 achieves ZT ≈ 1.16 at 923 K via microstructural texture tuning.

Anion exchange has been performed with nanoplates of tin sulfide (SnS) via “soft chemical” organic-free solution syntheses to yield layered pseudo-ternary tin chalcogenides on a 10 g-scale. SnS undergoes a topotactic transformation to form a series of S-substituted tin selenide (SnSe) nano/micro-plates with tuneable chalcogenide composition. SnS_0.1Se_0.9 nanoplates were spark plasma sintered into phase-pure, textured, dense pellets, the ZT of which has been significantly enhanced to ≈1.16 from ≈0.74 at 923 K via microstructure texturing control. These approaches provide versatile, scalable and low-cost routes to p-type layered tin chalcogenides with controllable composition and competitive thermoelectric performance.

Ionic liquid bifunctionally modulated aggregation-coalescence mechanism to synthesize SnSe single-crystal nanorod/nanoparticle core shell nanostructures and single-crystal nanorods for optoelectronics

Ionic liquid-bifunctional modulated synthesis of SnSe nanorafts and nanorods for optoelectronics.

Large-size and high performance visible-light photodetectors based on two-dimensional hybrid materials SnS/RGO

We report a facile solvothermal method to synthesize two-dimensional hybrid materials consisting of layered SnS nanosheets and reduced graphene oxide (SnS/RGO). Large-size photodetectors with a channel length/width = 2 mm/7 mm are fabricated on Si/SiO₂ substrates, showing an excellent photoresponsivity of 0.18 A W⁻¹ under visible-light illumination with a detectivity of 4.18 × 10¹⁰ Jones, as well as fast rise and decay times (τ_rise = τ_decay = 0.4 s). SnS/RGO hybrids are therefore promising candidates for potential applications in optoelectronics and low cost, high performance, and reliable photodetectors.

We report a facile solvothermal method to synthesize hybrid materials SnS/RGO which are promising candidates for potential applications in photodetectors.

Two-step synthesis and characterization of vertically stacked SnS–WS2 and SnS–MoS2 p–n heterojunctions

A robust way to synthesize bottom-up p–n junction based on SnS–WS₂ and SnS–MoS₂ heterostructures by two-step CVD.