Molecular reorganization in organic field-effect transistors and its effect on two-dimensional charge transport pathways

Thickness-Dependent Relative Dielectric Constant of Organic Ultrathin Films

In formulas employed for analysis of organic electronic devices, the relative dielectric constant value of the semiconductor organic films is often assumed rather than measured, even though it is a fundamental parameter for a correct interpretation. This is particularly true for ultrathin films made of discrete molecular layers. In this work, Spectroscopy Ellipsometry and Scanning Capacitance Microscopy were used to study thin films made of N,N'-bis(n-octyl)-x:y,dicyanoperylene-3,4 : 9,10-bis(dicarboximide). The relative dielectric constant presents a non-monotonic trend with thickness: it is equal to 2.1 for one molecular layer, saturating at 3.2 for increasing thickness. This maximum value, equivalent to the bulk one, occurs when the coverage is in between the third to the fourth layer. In this range, the growth switches from a Frank-Van der Merwe (2D growth) to a Volmer-Weber mode (3D growth); in addition, the molecular configuration assumes a bent/distorted geometry with respect to the initial edge-on one. These results establish a morphological dependence of the dielectric constant, especially in the vicinity of the substrate interface, that disappears at a certain distance from it.

Strong Magnetic Field Annealing for Improved Phthalocyanine Organic Thin-Film Transistors

Thin-film microstructure, morphology, and polymorphism can be controlled and optimized to improve the performance of carbon-based electronics. Thermal or solvent vapor annealing are common post-deposition processing techniques; however, it can be difficult to control or destructive to the active layer or substrates. Here, the use of a static, strong magnetic field (SMF) as a non-destructive process for the improvement of phthalocyanine (Pc) thin-film microstructure, increasing organic thin-film transistor (OTFTs) mobility by twofold, is demonstrated. Grazing incident wide-angle X-ray scattering (GIWAXS), X-ray diffraction (XRD), and atomic force microscopy (AFM) elucidate the effect of SMF on both para- and diamagnetic Pc thin-films when subjected to a magnetic field. A SMF is found to increase the concentration of oxygen-induced radical species within the Pc thin-film, lending a paramagnetic character to ordinarily diamagnetic metal-free Pc and resulting in magnetic field induced changes to its thin-film microstructures. In a nitrogen environment, without competing degradation effects of molecular oxygen, SMF processing is found to favorably improve charge transport characteristics and increase OTFT mobility. Thus, post-deposition thin-film annealing with a magnetic field is presented as an alternative and promising technique for future thin-film engineering applications.

A comprehensive picture of roughness evolution in organic crystalline growth: the role of molecular aspect ratio

Exploiting the capabilities of organic semiconductors for applications ranging from light-emitting diodes to photovoltaics to lasers relies on the creation of ordered, smooth layers for optimal charge carrier mobilities and exciton diffusion. This, in turn, creates a demand for organic small molecules that can form smooth thin film crystals via homoepitaxy. We have studied a set of small-molecule organic semiconductors that serve as templates for homoepitaxy. The surface roughness of these materials is measured as a function of adlayer film thickness from which the growth exponent (β) is extracted. Notably, we find that three-dimensional molecules that have low molecular aspect ratios (AR) tend to remain smooth as thickness increases (small β). This is in contrast to planar or rod-like molecules with high AR that quickly roughen (large β). Molecular dynamics simulations find that the Ehrlich-Schwöbel barrier (E_ES) alone is unable to fully explain this trend. We further investigated the mobility of ad-molecules on the crystalline surface to categorize their diffusion behaviors and the effects of aggregation to account for the different degrees of roughness that we observed. Our results suggest that low AR molecules have low molecular mobility and moderate E_ES which creates a downward funneling effect leading to smooth crystal growth.

Synthesis, Crystal Structure, and Antibacterial Properties of Silver-Functionalized Low-Dimensional Layered Zirconium Phosphonates

New insoluble layered zirconium phosphate carboxyaminophosphonates (ZPs), with the general formula Zr2(PO4)H5[(O3PCH2)2N(CH2)nCOO]2·mH2O (n = 3, 4, and 5), have been prepared and characterized. The crystal structure for n = 3 and 4 samples was determined ab initio from X-ray powder diffraction data. The structure for n = 3 was monoclinic in space group C2/c with the following unit cell parameters: a = 34.346(1) Å, b = 8.4930(2) Å, c = 9.0401(2) Å, and β = 97.15(1)°. The structure for n = 4 was triclinic in space group P1̅ with the following unit cell parameters: a = 17.9803(9) Å, b = 8.6066(4) Å, c = 9.0478(3) Å, α = 90.466(3)°, β = 94.910(4)°, and γ = 99.552(4)°. The two structures had the same connectivity as Zr phosphate glycine diphosphonate (n = 1), as previously reported. By intercalation of short amines, these layered compounds were exfoliated in single lamella or packets of a few lamellae, which formed colloidal dispersions in water. After a thorough characterization, the dispersed lamellae were functionalized with Ag nanoparticles, which were grown in situ on the surface of exfoliated lamellae. Finally, their antimicrobial activity was tested on several Gram-positive and Gram-negative bacteria. All of these systems were found to be active against the four pathogens most frequently isolated from orthopedic prosthetic infections and often causative of nosocomial infections. Interestingly, they were found to express powerful inhibitory activity even against bacterial strains exhibiting a relevant profile of antibiotic resistance such as Staphylococcus aureus ATCC 700699.

Differential Entropy: An Appropriate Analysis to Interpret the Shape Complexity of Self-Similar Organic Islands

Differential entropy, along with fractal dimension, is herein employed to describe and interpret the shape complexity of self-similar organic islands. The islands are imaged with in situ Atomic Force Microscopy, following, step-by-step, the evolution of their shape while deposition proceeds. The fractal dimension shows a linear correlation with the film thickness, whereas the differential entropy presents an exponential plateau. Plotting differential entropy versus fractal dimension, a linear correlation can be found. This analysis enables one to discern the 6T growth on different surfaces, i.e., native SiO_x or 6T layer, and suggests a more comprehensive interpretation of the shape evolution. Changes in fractal dimension reflect rougher variations of the island contour, whereas changes in differential entropy correlates with finer contour details. The computation of differential entropy therefore helps to obtain more physical information on the island shape dependence on the substrate, beyond the standard description obtained with the fractal dimension.

Exciton Modulation in Perylene-Based Molecular Crystals Upon Formation of a Metal-Organic Interface From Many-Body Perturbation Theory

Excited-state processes at organic-inorganic interfaces consisting of molecular crystals are essential in energy conversion applications. While advances in experimental methods allow direct observation and detection of exciton transfer across such junctions, a detailed understanding of the underlying excitonic properties due to crystal packing and interface structure is still largely lacking. In this work, we use many-body perturbation theory to study structure-property relations of excitons in molecular crystals upon adsorption on a gold surface. We explore the case of the experimentally-studied octyl perylene diimide (C8-PDI) as a prototypical system, and use the GW and Bethe-Salpeter equation (BSE) approach to quantify the change in quasiparticle and exciton properties due to intermolecular and substrate screening. Our findings provide a close inspection of both local and environmental structural effects dominating the excitation energies and the exciton binding and nature, as well as their modulation upon the metal-organic interface composition.

Highly sensitive 2D organic field-effect transistors for the detection of lithium-ion battery electrolyte leakage

Lithium ion batteries (LIBs) have become indispensable in daily life. Here, we fabricated a broad range of polymer semiconductor films as thin as 2 nm via a standard spin-coating method, and utilized the resulting organic transistors for the detection of LIB electrolytes, which can give an early warning signal before LIB failure.

Roughness evolution in strongly interacting donor:acceptor mixtures of molecular semiconductors. An in situ, real-time growth study using x-ray reflectivity

The evolution of surface roughness in binary mixtures of the two molecular organic semiconductors (OSCs) diindenoperylene (DIP) as electron-donor and 1, 3, 4, 5, 7, 8-hexafluoro-tetracyano naphthoquinodimethane (F6TCNNQ) as electron-acceptor is studied. We co-deposit DIP and F6TCNNQ in vacuum with varying relative molar content while keeping a molar excess of DIP in order to produce phase-heterogeneous mixtures. The excess DIP phase segregates in pristine crystallites, whereas the remaining mixed phase is constituted by DIP:F6TCNNQ co-crystallites. We calculate the surface roughness as function of film thickness by modelling x-ray reflectivity data acquired in situ and in real-time during film growth. To model the experimental data, two distinct approaches, namely the kinematic approximation and the Parratt formalism, are applied. A comparative study of surface roughness evolution as function of DIP:F6TCNNQ mixing ratio is carried out implementing the Trofimov growth model within the kinematic approximation. Depending on the thickness regime, mixing ratio-specific trends are identified and discussed. To explain them, a growth mechanism for binary heterogeneous mixtures of strongly interacting OSCs is proposed.

Surface-Controlled Crystal Alignment of Naphthyl End-Capped Oligothiophene on Graphene: Thin-Film Growth Studied by in Situ X-ray Diffraction

We report on the microstructure, morphology, and growth of 5,5'-bis(naphth-2-yl)-2,2'-bithiophene (NaT2) thin films deposited on graphene, characterized by grazing incidence X-ray diffraction (GIXRD) and complemented by atomic force microscopy (AFM) measurements. NaT2 is deposited on two types of graphene surfaces: custom-made samples where chemical vapor deposition (CVD)-grown graphene layers are transferred onto a Si/SiO₂ substrate by us and common commercially transferred CVD graphene on Si/SiO₂. Pristine Si/SiO₂ substrates are used as a reference. The NaT2 crystal structure and orientation depend strongly on the underlying surface, with the molecules predominantly lying down on the graphene surface (face-on orientation) and standing nearly out-of-plane (edge-on orientation) on the Si/SiO₂ reference surface. Post growth GIXRD and AFM measurements reveal that the crystalline structure and grain morphology differ depending on whether there is polymer residue left on the graphene surface. In situ GIXRD measurements show that the thickness dependence of the intensity of the (111) reflection from the crystalline edge-on phase does not intersect zero at the beginning of the deposition process, suggesting that an initial wetting layer, corresponding to 1-2 molecular layers, is formed at the surface-film interface. By contrast, the (111) reflection intensity from the crystalline face-on phase grows at a constant rate as a function of film thickness during the entire deposition.

Synchrotron Scattering Methods for Nanomaterials and Soft Matter Research

This article aims to provide an overview of broad range of applications of synchrotron scattering methods in the investigation of nanoscale materials. These scattering techniques allow the elucidation of the structure and dynamics of nanomaterials from sub-nm to micron size scales and down to sub-millisecond time ranges both in bulk and at interfaces. A major advantage of scattering methods is that they provide the ensemble averaged information under in situ and operando conditions. As a result, they are complementary to various imaging techniques which reveal more local information. Scattering methods are particularly suitable for probing buried structures that are difficult to image. Although, many qualitative features can be directly extracted from scattering data, derivation of detailed structural and dynamical information requires quantitative modeling. The fourth-generation synchrotron sources open new possibilities for investigating these complex systems by exploiting the enhanced brightness and coherence properties of X-rays.

Gas Sensors Based on Nano/Microstructured Organic Field-Effect Transistors

Benefiting from the advantages of organic field-effect transistors (OFETs), including synthetic versatility of organic molecular design and environmental sensitivity, gas sensors based on OFETs have drawn much attention in recent years. Potential applications focus on the detection of specific gas species such as explosive, toxic gases, or volatile organic compounds (VOCs) that play vital roles in environmental monitoring, industrial manufacturing, smart health care, food security, and national defense. To achieve high sensitivity, selectivity, and ambient stability with rapid response and recovery speed, the regulation and adjustment of the nano/microstructure of the organic semiconductor (OSC) layer has proven to be an effective strategy. Here, the progress of OFET gas sensors with nano/microstructure is selectively presented. Devices based on OSC films one dimensional (1D) single crystal nanowires, nanorods, and nanofibers are introduced. Then, devices based on two dimensional (2D) and ultrathin OSC films, fabricated by methods such as thermal evaporation, dip-coating, spin-coating, and solution-shearing methods are presented, followed by an introduction of porous OFET sensors. Additionally, the applications of nanostructured receptors in OFET sensors are given. Finally, an outlook in view of the current research state is presented and eight further challenges for gas sensors based on OFETs are suggested.

Perylene-Diimide Molecules with Cyano Functionalization for Electron-Transporting Transistors

Core-cyanated perylene diimide (PDI_CY) derivatives are molecular compounds exhibiting an uncommon combination of appealing properties, including remarkable oxidative stability, high electron affinities, and excellent self-assembling properties. Such features made these compounds the subject of study for several research groups aimed at developing electron-transporting (n-type) devices with superior charge transport performances. After about fifteen years since the first report, field-effect transistors based on PDI_CY thin films are still intensely investigated by the scientific community for the attainment of n-type devices that are able to balance the performances of the best p-type ones. In this review, we summarize the main results achieved by our group in the fabrication and characterization of transistors based on PDI8-CN2 and PDIF-CN2 molecules, undoubtedly the most renowned compounds of the PDI_CY family. Our attention was mainly focused on the electrical properties, both at the micro and nanoscale, of PDI8-CN2 and PDIF-CN2 films deposited using different evaporation techniques. Specific topics, such as the contact resistance phenomenon, the bias stress effect, and the operation in liquid environment, have been also analyzed.

High-resolution photoluminescence electro-modulation microscopy by scanning lock-in

Morphological inhomogeneities and structural defects in organic semiconductors crucially determine the charge accumulation and lateral transport in organic thin-film transistors. Photoluminescence Electro-Modulation (PLEM) microscopy is a laser-scanning microscopy technique that relies on the modulation of the thin-film fluorescence in the presence of charge-carriers to image the spatial distribution of charges within the active organic semiconductor. Here, we present a lock-in scheme based on a scanning beam approach for increasing the PLEM microscopy resolution and contrast. The charge density in the device is modulated by a sinusoidal electrical signal, phase-locked to the scanning beam of the excitation laser. The lock-in detection scheme is achieved by acquiring a series of images with different phases between the beam scan and the electrical modulation. Application of high resolution PLEM to an organic transistor in accumulation mode demonstrates its potential to image local variations in the charge accumulation. A diffraction-limited precision of sub-300 nm and a signal to noise ratio of 21.4 dB could be achieved.

Subnanometer Resolution and Enhanced Friction Contrast at the Surface of Perylene Diimide PDI8-CN2 Thin Films in Ambient Conditions

We report high-resolution surface morphology and friction force maps of polycrystalline organic thin films derived by deposition of the n-type perylene diimide semiconductor PDI8-CN₂. We show that the in-plane molecular arrangement into ordered, cofacial slip-stacked rows results in a largely anisotropic surface structure, with a characteristic sawtooth corrugation of a few Ångstroms wavelength and height. Load-controlled experiments reveal different types of friction contrast between the alternating sloped and stepped regions, with transitions from atomic-scale dissipative stick-slip to smooth sliding with ultralow friction within the surface unit cell. Notably, such a rich phenomenology is captured under ambient conditions. We demonstrate that friction contrast is well reproduced by numerical simulations assuming a reduced corrugation of the tip-molecule potential nearby the step edges. We propose that the side alkyl chains pack into a compact low-surface-energy overlayer, and friction modulation reflects periodic heterogeneity of chains bending properties and subsurface anchoring to the perylene cores.

Self-assembled monolayers in organic electronics

Self-assembly is possibly the most effective and versatile strategy for surface functionalization. Self-assembled monolayers (SAMs) can be formed on (semi-)conductor and dielectric surfaces, and have been used in a variety of technological applications. This work aims to review the strategy behind the design and use of self-assembled monolayers in organic electronics, discuss the mechanism of interaction of SAMs in a microscopic device, and highlight the applications emerging from the integration of SAMs in an organic device. The possibility of performing surface chemistry tailoring with SAMs constitutes a versatile approach towards the tuning of the electronic and morphological properties of the interfaces relevant to the response of an organic electronic device. Functionalisation with SAMs is important not only for imparting stability to the device or enhancing its performance, as sought at the early stages of development of this field. SAM-functionalised organic devices give rise to completely new types of behavior that open unprecedented applications, such as ultra-sensitive label-free biosensors and SAM/organic transistors that can be used as robust experimental gauges for studying charge tunneling across SAMs.

The prediction of hole mobility in organic semiconductors and its calibration based on the grain-boundary effect

A new reliable computational model to predict the hole mobility of poly-crystalline organic semiconductors in thin films was developed. Site energy differences and transfer integrals in crystalline morphologies of organic molecules were obtained from quantum chemical calculations, in which periodic boundary conditions were efficiently applied to capture the interactions with the surrounding molecules in the crystalline organic layer. Then the parameters were employed in kinetic Monte Carlo (kMC) simulations to estimate the carrier mobility. Carrier transport in multiple directions has been considered in the kMC simulation to mimic poly-crystalline characteristics under thin-film conditions. Furthermore, the calculated mobility was corrected using a calibration equation based on microscopy images of the thin films to take the effect of grain boundaries into account. As a result, good agreement was observed between the predicted and measured hole mobility values for 21 molecular species: the coefficient of determination (R(2)) was estimated to be 0.83 and the mean absolute error was 1.32 cm(2) V(-1) s(-1). This numerical approach can be applied to any molecules for which crystal structures are available and will provide a rapid and precise way of predicting device performance.

Kinetic and Thermodynamic Control in Porphyrin and Phthalocyanine Self-Assembled Monolayers

Porphyrins and phthalocyanines are ubiquitous in modern science and technology. Their stability, redox properties, and photoresponse make them candidates for numerous applications. Many of these applications rely on thin films, and these are critically dependent on the first monolayer. In this article, we focus on noncovalently bound self-assembled monolayers of porphyrins and phthalocyanines at the solution-solid interface with special emphasis on the kinetic and thermodynamic processes that define the films and their reaction chemistry. We first discuss the difference between film-formation kinetics and desorption kinetics from fully formed films. We then present evidence that many of these monolayers are controlled by adsorption kinetics and are not in thermodynamic equilibrium. Measurement of the solution-solid interface desorption energy by scanning tunneling microscopy is discussed, and data is presented for cobalt, nickel, and free base octaethylporphyrin. The activation energy for the desorption of these compounds into phenyloctane is about half of the computed desorption energy in vacuum, and this is discussed in terms of the role of the solvent. Preexponential factors are very low compared to desorption into vacuum, and this is attributed to a reduction in the entropy of activation due to the participation of solvent in the transition state. An example of the use of relative desorption kinetics to create a new binary surface structure is given. It is suggested that this is a synthesis route that may have been missed because of the large difference in solution concentrations required to drive binary film formation. Attention then turns to the axial reaction chemistry of metalloporphyrins and metallophthalocyanines supported on conducting surfaces. We show several examples of chemistry unique to the supported complexes: cases where the metal binds ligands more readily and cases where the substrate induces ligand loss. Understanding this new axial coordination chemistry is of great importance in catalysis, sensing, and the growth of 3D materials from a self-assembled template.

MINERVA: A facility to study Microstructure and INterface Evolution in Realtime under VAcuum

A sample environment to enable real-time X-ray scattering measurements to be recorded during the growth of materials by thermal evaporation in vacuum is presented. The in situ capabilities include studying microstructure development with time or during exposure to different environmental conditions, such as temperature and gas pressure. The chamber provides internal slits and a beam stop, to reduce the background scattering from the X-rays passing through the entrance and exit windows, together with highly controllable flux rates of the evaporants. Initial experiments demonstrate some of the possibilities by monitoring the growth of bathophenanthroline (BPhen), a common molecule used in organic solar cells and organic light emitting diodes, including the development of the microstructure with time and depth within the film. The results show how BPhen nanocrystal structures coarsen at room temperature under vacuum, highlighting the importance of using real time measurements to understand the as-deposited pristine film structure and its development with time. More generally, this sample environment is versatile and can be used for investigation of structure-property relationships in a wide range of vacuum deposited materials and their applications in, for example, optoelectronic devices and energy storage.

A molecular-scale portrait of domain imaging in organic surfaces

Progress in the general understanding of structure-property relationships in organic devices requires experimental tools capable of imaging structural details, such as molecular packing or domain attributes, on ultra-thin films. An operation mode of scanning force microscopy, related to friction force microscopy (FFM) and known as transverse shear microscopy (TSM), has demonstrated the ability to reveal the orientation of crystalline domains in organic surfaces with nanometer resolution. In spite of these promising results, numerous questions remain about the physical origin of the TSM domain imaging mechanism. Taking as a benchmark a PTCDI-C8 sub-monolayer, we demonstrate experimentally and theoretically that such a mechanism is the same atomic scale stick-slip ruling FFM leading to the angular dependence of both signals. Lattice-resolved images acquired on top of differently oriented PTCDI-C8 molecular domains are crucial to permit azimuthal sampling, without the need for sample rotation. The simulations reveal that, though the surface crystallography is the direct cause of the FFM and TSM signals, the manifestation of anisotropy will largely depend on the amplitude of the surface potential corrugation as well as on the temperature. This work provides a novel nanoscale strategy for the quantitative analysis of organic thin films based on their nanotribological response.

Thermal Gradient During Vacuum-Deposition Dramatically Enhances Charge Transport in Organic Semiconductors: Toward High-Performance N-Type Organic Field-Effect Transistors

A thermal gradient distribution was applied to a substrate during the growth of a vacuum-deposited n-type organic semiconductor (OSC) film prepared from N,N'-bis(2-ethylhexyl)-1,7-dicyanoperylene-3,4:9,10-bis(dicarboxyimide) (PDI-CN2), and the electrical performances of the films deployed in organic field-effect transistors (OFETs) were characterized. The temperature gradient at the surface was controlled by tilting the substrate, which varied the temperature one-dimensionally between the heated bottom substrate and the cooled upper substrate. The vacuum-deposited OSC molecules diffused and rearranged on the surface according to the substrate temperature gradient, producing directional crystalline and grain structures in the PDI-CN2 film. The morphological and crystalline structures of the PDI-CN2 thin films grown under a vertical temperature gradient were dramatically enhanced, comparing with the structures obtained from either uniformly heated films or films prepared under a horizontally applied temperature gradient. The field effect mobilities of the PDI-CN2-FETs prepared using the vertically applied temperature gradient were as high as 0.59 cm² V^-1 s^-1, more than a factor of 2 higher than the mobility of 0.25 cm² V^-1 s^-1 submitted to conventional thermal annealing and the mobility of 0.29 cm² V^-1 s^-1 from the horizontally applied temperature gradient.

Thin film growth studies using time-resolved x-ray scattering

Thin-film growth is important for novel functional materials and new generations of devices. The non-equilibrium growth physics involved is very challenging, because the energy landscape for atomic scale processes is determined by many parameters, such as the diffusion and Ehrlich-Schwoebel barriers. We review the in situ real-time techniques of x-ray diffraction (XRD), x-ray growth oscillations and diffuse x-ray scattering (GISAXS) for the determination of structure and morphology on length scales from Å to µm. We give examples of time resolved growth experiments mainly from molecular thin film growth, but also highlight growth of inorganic materials using molecular beam epitaxy (MBE) and electrochemical deposition from liquids. We discuss how scaling parameters of rate equation models and fundamental energy barriers in kinetic Monte Carlo methods can be determined from fits of the real-time x-ray data.

Growth and annealing kinetics of α-sexithiophene and fullerene C60mixed films

Thin films of α-sexithiophene (6T) and C60mixtures deposited on nSiO substrates at 303 and 373 K were investigated in real time andin situduring the film growth using X-ray diffraction. The mixtures are observed to contain the well known 6T low-temperature crystal phase and the β phase, which usually coexist in pure 6T films. The addition of C60modifies the structure to almost purely β-phase-dominated films if the substrate is at 303 K. In contrast, at 373 K the low-temperature crystal phase of 6T dominates the film growth of the mixtures. Post-growth annealing experiments up to 373 K on equimolar mixtures and pure 6T films were also performed and followed in real time with X-ray diffraction. Annealing of pure 6T films results in a strong increase of film ordering, whereas annealing of equimolar 6T:C60mixed films does not induce any significant changes in the film structure. These results lend further support to theories about the important influence of C60on the growth behaviour and structure formation process of 6T in mixtures of the two materials.

Island shape and electronic structure in diindenoperylene thin films deposited on Au(110) single crystals

We have investigated diindenoperylene (DIP) thin films deposited on Au(110) single crystals, by using a multi-technique approach based on X-ray photoemission spectroscopy (XPS), resonant photoemission spectroscopy (RPES), near edge X-ray absorption fine structure (NEXAFS) spectroscopy, atomic force microscopy (AFM) and photoemission electron microscopy (PEEM). DIP molecules are physisorbed on gold, with image-charge screening playing the major role as an interface phenomenon. DIP thin films show Stranski-Krastanov growth mode and the structural herringbone arrangement mimics the arrangement found in DIP single crystals. These results are common with the (100) and (111) gold substrate geometries. On the contrary, the island aggregation is substrate geometry-dependent. This paves the way to exploit the degree of anisotropy in different lattice geometries as a tool for molecular patterning of inorganic surfaces, keeping the electronic structure preserved.

Modulation of Domain Size in Polycrystalline n-Type Dicyanoperylene Mono- and Bilayer Transistors

A single molecular layer (monolayer) of organic semiconductors is proven to be sufficient to create a conducting channel for charge carriers in field-effect transistors, which is an ideal platform to investigate the correlation between molecular self-assembly and device performance. Herein, ultrathin films including mono- and bilayers of an n-type dicyanoperylene (PDI8-CN2) are solution-processed by dip-coating. The domain size of the polycrystalline layers is modulated via the surface roughness of the dielectric within an extremely narrow window from 0.15 to 0.39 nm. When the surface roughness is varied from smooth to rough, the domain size and molecular order in the monolayer are significantly decreased, leading to the reduction in electron mobility by 3 orders of magnitude. On the contrary, a lower roughness dependence is observed in the case of the bilayers, with only a slight difference in domain size and charge carrier transport. On the smooth surface, the bilayers exhibit a transistor performance identical to that of the bulk film, confirming that the first few layers near the dielectric dominate the charge carrier transport. Additionally, these results provide insights into the intrinsic role of the interfacial microstructure of small molecular organic semiconductors.

Investigations on Substrate Temperature-Induced Growth Modes of Organic Semiconductors at Dielectric/semiconductor Interface and Their Correlation with Threshold Voltage Stability in Organic Field-Effect Transistors

Influence of substrate temperature on growth modes of copper phthalocyanine (CuPc) thin films at the dielectric/semiconductor interface in organic field effect transistors (OFETs) is investigated. Atomic force microscopy (AFM) imaging at the interface reveals a change from 'layer+island' to "island" growth mode with increasing substrate temperatures, further confirmed by probing the buried interfaces using X-ray reflectivity (XRR) and positron annihilation spectroscopic (PAS) techniques. PAS depth profiling provides insight into the details of molecular ordering while positron lifetime measurements reveal the difference in packing modes of CuPc molecules at the interface. XRR measurements show systematic increase in interface width and electron density correlating well with the change from layer + island to coalesced huge 3D islands at higher substrate temperatures. Study demonstrates the usefulness of XRR and PAS techniques to study growth modes at buried interfaces and reveals the influence of growth modes of semiconductor at the interface on hole and electron trap concentrations individually, thereby affecting hysteresis and threshold voltage stability. Minimum hole trapping is correlated to near layer by layer formation close to the interface at 100 °C and maximum to the island formation with large voids between the grains at 225 °C.

Single-Molecule Break Junctions Based on a Perylene-Diimide Cyano-Functionalized (PDI8-CN2) Derivative

In this letter, we report the single-molecule conductance properties of a cyano-functionalized perylene-diimide derivative (PDI8-CN2) investigated with gold nano-electrodes. This molecule is of large interest for the fabrication of high-performance and air-stable n-type organic field-effect transistors. Low-bias experiments performed on mechanically controllable break junctions reveal the presence of two different values of the single-molecule conductance, which differ by about two orders of magnitudes. Up to date, this feature was never observed for other perylene-diimide compounds having alternative chemical moieties attached to the basic aromatic core. Theoretical calculations suggest that the highest single-molecule conductance value here observed, comprised between 10(-2) and 10(-3) G0, is related to a charge transport path directly linking the two cyano groups.

Intercorrelation of Electronic, Structural, and Morphological Properties in Nanorods of 2,3,9,10-Tetrafluoropentacene

We evidence the intercorrelation of electronic, structural, and morphological properties in nanorods of a substituted fluorine-based pentacene, 2,3,9,10-tetrafluoropentacene, deposited on gold single crystals by using photoemission and X-ray absorption spectroscopy investigations. Our investigations show changes in the XPS spectroscopy lines, and NEXAFS features correlate with the specific structure of the assemblies and their morphology. Consequently, the chemical structure affects not only the molecular electronic structure and the way the molecules assemble in a film but also the film morphology leading to specific thin film electronic properties.

Probing molecular packing at engineered interfaces in organic field effect transistor and its correlation with charge carrier mobility

Surface engineering of SiO2 dielectric using different self-assembled monolayer (SAM) has been carried out, and its effect on the molecular packing and growth behavior of copper phthalocyanine (CuPc) has been studied. A correlation between the growth behavior and performance of organic field effect transistors is examined. Depth profiling using positron annihilation and X-ray reflectivity techniques has been employed to characterize the interface between CuPc and the modified and/or unmodified dielectric. We observe the presence of structural defects or disorder due to disorientation of CuPc molecules on the unmodified dielectric and ordered arrangement on the modified dielectrics, consistent with the high charge carrier mobility in organic field effect transistors in the latter. The study also highlights the sensitivity of these techniques to the packing of CuPc molecules on SiO2 modified using different SAMs. Our study also signifies the sensitivity and utility of these two techniques in the characterization of buried interfaces in organic devices.

Chemisorption, morphology, and structure of a n-type perylene diimide derivative at the interface with gold: influence on devices from thin films to single molecules

We have investigated thin films of a perylene diimide derivative with a cyano-functionalized core (PDI-8CN2) deposited on Au(111) single crystals from the monolayer to the multilayer regime. We found that PDI-8CN2 is chemisorbed on gold. The molecules experience a thickness-dependent reorientation, and a 2D growth mode with molecular stepped terraces is achieved adopting low deposition rates. The obtained results are discussed in terms of their impact on field effect devices, also clarifying why the use of substrate/contact treatments, decoupling PDI-8CN2 molecules from the substrate/contacts, is beneficial for such devices. Our results also suggest that perylene diimide derivatives with CN bay-functionalization are very promising candidates for single-molecule electronic devices.

Electronic structure and stability of fluorophore-nitroxide radicals from ultrahigh vacuum to air exposure

Thin film processes of organic radicals remain widely unknown, although these materials may have a significant technological potential. In aiming at their use in applications, we explore the electronic structure of thin films of a nitronyl nitroxide radical attached to a fluorophore core. According to our findings, this molecule maintains its radical function and, consequently, its sensing capabilities in the thin films. The films are characterized by a high structural degree of the molecular arrangement, coupled to strong vacuum and air stability that make this fluorophore-nitroxide radical an extremely promising candidate for application in electronics. Our work also identifies a quantitative correlation between the results obtained by the simultaneous use of X-ray photoemission and electron paramagnetic resonance spectroscopy. This result can be used as a standard diagnostic tool in order to link the (in situ-measured) electronic structure with classical ex situ paramagnetic investigations.

Aggregation of Aß(25-35) on DOPC and DOPC/DHA bilayers: an atomic force microscopy study

β amyloid peptide plays an important role in both the manifestation and progression of Alzheimer disease. It has a tendency to aggregate, forming low-molecular weight soluble oligomers, higher-molecular weight protofibrillar oligomers and insoluble fibrils. The relative importance of these single oligomeric-polymeric species, in relation to the morbidity of the disease, is currently being debated. Here we present an Atomic Force Microscopy (AFM) study of Aβ(25–35) aggregation on hydrophobic dioleoylphosphatidylcholine (DOPC) and DOPC/docosahexaenoic 22∶6 acid (DHA) lipid bilayers. Aβ(25–35) is the smallest fragment retaining the biological activity of the full-length peptide, whereas DOPC and DOPC/DHA lipid bilayers were selected as models of cell-membrane environments characterized by different fluidity. Our results provide evidence that in hydrophobic DOPC and DOPC/DHA lipid bilayers, Aβ(25-35) forms layered aggregates composed of mainly annular structures. The mutual interaction between annular structures and lipid surfaces end-results into a membrane solubilization. The presence of DHA as a membrane-fluidizing agent is essential to protect the membrane from damage caused by interactions with peptide aggregates; to reduces the bilayer defects where the delipidation process starts.

Charge trapping states at the SiO2-oligothiophene monolayer interface in field effect transistors studied by Kelvin probe force microscopy

Using Kelvin probe force microscopy (KPFM) we studied the local charge trapping states at the SiO2-oligothiophene interface in a field effect transistor (FET), where SiO2 is the gate dielectric. KPFM reveals surface potential inhomogeneities within the oligothiophene monolayer, which correlate with its structure. A large peak of trap states with energies in the oligothiophene's band gap due to hydroxyl groups is present at the oxide surface. We show that these states are successfully eliminated by preadsorption of a layer of (3-aminopropyl)triethoxysilane (APTES). Time-resolved surface potential transient measurements further show that the charge carrier injection in the nonpassivated FET contains two exponential transients, due to the charge trapping on the oxide surface and in the bulk oxide, while the APTES-passivated FET has only a single-exponential transient due to the bulk oxide. The results demonstrate that APTES is a good SiO2 surface passivation layer to reduce trap states while maintaining a hydrophilic surface, pointing out the importance of dielectric surface passivation to bridge the gap between soft materials and electronic devices.