Real function of semiconducting polymer in GaAs/polymer planar heterojunction solar cells

Nanowires for High-Efficiency, Low-Cost Solar Photovoltaics

Solar energy is abundant, clean, and renewable, making it an ideal energy source. Solar cells are a good option to harvest this energy. However, it is difficult to balance the cost and efficiency of traditional thin-film solar cells, whereas nanowires (NW) are far superior in making high-efficiency low-cost solar cells. Therefore, the NW solar cell has attracted great attention in recent years and is developing rapidly. Here, we review the great advantages, recent breakthroughs, novel designs, and remaining challenges of NW solar cells. Special attention is given to (but not limited to) the popular semiconductor NWs for solar cells, in particular, Si, GaAs(P), and InP.

The Light-Induced Field-Effect Solar Cell Concept - Perovskite Nanoparticle Coating Introduces Polarization Enhancing Silicon Cell Efficiency

Solar cell generates electrical energy from light one via pulling excited carrier away under built-in asymmetry. Doped semiconductor with antireflection layer is general strategy to achieve this including crystalline silicon (c-Si) solar cell. However, loss of extra energy beyond band gap and light reflection in particular wavelength range is known to hinder the efficiency of c-Si cell. Here, it is found that part of short wavelength sunlight can be converted into polarization electrical field, which strengthens asymmetry in organic-c-Si heterojunction solar cell through molecule alignment process. The light harvested by organometal trihalide perovskite nanoparticles (NPs) induces molecular alignment on a conducting polymer, which generates positive electrical surface field. Furthermore, a "field-effect solar cell" is successfully developed and implemented by combining perovskite NPs with organic/c-Si heterojunction associating with light-induced molecule alignment, which achieves an efficiency of 14.3%. In comparison, the device with the analogous structure without perovskite NPs only exhibits an efficiency of 12.7%. This finding provides a novel concept to design solar cell by sacrificing part of sunlight to provide "extra" asymmetrical field continuously as to drive photogenerated carrier toward respective contacts under direct sunlight. Moreover, it also points out a method to combine promising perovskite material with c-Si solar cell.

Effective coupled optoelectrical design method for fully infiltrated semiconductor nanowires based hybrid solar cells

We present a novel coupled design method that both optimizes light absorption and predicts electrical performance of fully infiltrated inorganic semiconductor nanowires (NWs) based hybrid solar cells (HSC). This method provides a thorough insight of hybrid photovoltaic process as a function of geometrical parameters of NWs. An active layer consisting of GaAs NWs as acceptor and poly(3-hexylthiophene-2,5-diyl) (P3HT) as donor were used as a design example. Absorption spectra features were studied by the evolution of the leaky modes and Fabry-Perot resonance with wavelength focusing firstly on the GaAs/air layer before extending to GaAs/P3HT hybrid active layer. The highest absorption efficiency reached 39% for the hybrid active layer of 2 μm thickness under AM 1.5G illumination. Combined with the optical absorption analysis, our method further codesigns the energy harvesting to predict electrical performance of HSC considering exciton dissociation efficiencies within both inorganic NWs and a polymeric shell of 20 nm thickness. The validity of the simulation model was also proved by the well agreement of the simulation results with the published experimental work indicating an effective guidance for future high performance HSC design.

Investigation of Localized States in GaAsSb Epilayers Grown by Molecular Beam Epitaxy

We report the carrier dynamics in GaAsSb ternary alloy grown by molecular beam epitaxy through comprehensive spectroscopic characterization over a wide temperature range. A detailed analysis of the experimental data reveals a complex carrier relaxation process involving both localized and delocalized states. At low temperature, the localized degree shows linear relationship with the increase of Sb component. The existence of localized states is also confirmed by the temperature dependence of peak position and band width of the emission. At temperature higher than 60 K, emissions related to localized states are quenched while the band to band transition dominates the whole spectrum. This study indicates that the localized states are related to the Sb component in the GaAsSb alloy, while it leads to the poor crystal quality of the material, and the application of GaAsSb alloy would be limited by this deterioration.

Improvement in Open-Circuit Voltage of Thin Film Solar Cells from Aqueous Nanocrystals by Interface Engineering

In this work, improved solar cells from aqueous CdTe NCs is achieved by replacing evaporated MoOx with spiro-OMeTAD as a hole transfer layer. The increased Voc and Jsc can be attributed to interfacial dipole effect and reduced back recombination loss, respectively. A high PCE of 6.56% for solar cells from aqueous NCs is obtained by optimizing the microstructure further.

Unravelling the working junction of aqueous-processed polymer–nanocrystal solar cells towards improved performance

We demonstrate that the working principle of hybrid solar cells based on water-soluble polymers and nanocrystals follows a p–n junction instead of a type-II heterojunction. An improved PCE of 5.41% is obtained by optimizing these cells.

Ambipolar Charge Photogeneration and Transfer at GaAs/P3HT Heterointerfaces

Recent work on hybrid photovoltaic systems based on conjugated polymers and III-V compound semiconductors with relatively high power conversion efficiency revived fundamental questions regarding the nature of charge separation and transfer at the interface between organic and inorganic semiconductors with different degrees of delocalization. In this work, we studied photoinduced charge generation and interfacial transfer dynamics in a prototypical photovoltaic n-type GaAs (111)B and poly(3-hexyl-thiophene) (P3HT) bilayer system. Ultrafast spectroscopy and density functional theory calculations indicate the coexistence of electron and hole transfer at the GaAs/P3HT interface, leading to the generation of long-lived species and photoinduced absorption upon creation of hybrid interfacial states. This opens up new avenues for the use of low-dimensional III-V compounds (e.g., nanowires or quantum dots) in hybrid organic/inorganic photovoltaics, where advanced bandgap and density of states engineering may also be exploited as design parameters.