Bundling of GaAs nanowires: a case of adhesion-induced self-assembly of nanowires

Capillary-force-driven self-assembly of carbon nanotubes: from ab initio calculations to modeling of self-assembly

In elasto-capillary driven self-assembly of arrays of carbon nanotubes (CNTs) different factors play a role, from the mechanical properties of CNTs to the array geometry. In this work, we provide a multi-scale investigation where we first use density functional theory (DFT) to predict fully ab initio relevant mechanical properties such as Young's modulus, Poisson's ratio, and surface energy. To the best of our knowledge, we are the first to report DFT calculations of the surface energy of CNTs. Then, we feed the computed DFT parameters into a model for capillary-force-driven self-assembly of CNTs. By doing so, we are able to derive and predict cross-correlation between material parameters and array architecture.

Coalescence, crystallographic orientation and luminescence of ZnO nanowires grown on Si(001) by chemical vapour transport

We analyse the morphological, structural and luminescence properties of self-assembled ZnO nanowires grown by chemical vapour transport on Si(001). The examination of nanowire ensembles by scanning electron microscopy reveals that a non-negligible fraction of nanowires merge together forming coalesced aggregates during growth. We show that the coalescence degree can be unambiguously quantified by a statistical analysis of the cross-sectional shape of the nanowires. The examination of the structural properties by x-ray diffraction evidences that the nanowires crystallize in the wurtzite phase, elongate along the c-axis, and are randomly oriented in plane. The luminescence of the ZnO nanowires, investigated by photoluminescence and cathodoluminescence spectroscopy, is characterized by two bands, the near-band-edge emission and the characteristic defect-related green luminescence of ZnO. The cross-correlation of scanning electron micrographs and monochromatic cathodoluminescence intensity maps reveals that: (i) coalescence joints act as a source of non-radiative recombination, and (ii) the luminescence of ZnO nanowires is inhomogeneously distributed at the single nanowire level. Specifically, the near-band-edge emission arises from the nanowire cores, while the defect-related green luminescence originates from the volume close to the nanowire sidewalls. Two-dimensional simulations of the optical guided modes supported by ZnO nanowires allow us to exclude waveguiding effects as the underlying reason for the luminescence inhomogeneities. We thus attribute this observation to the formation of a core-shell structure in which the shell is characterized by a high concentration of green-emitting radiative point defects as compared to the core.

The importance of design in nanoarchitectonics: multifractality in MACE silicon nanowires

Background: Mechanisms of self-assembly/self-organization are fundamental for the emergence of nanoarchitectonic systems composed by elemental units, and it is important to build a theoretical framework for them. Additionally, because the enhanced functionalities of these systems are related to their spatial morphologies, it is necessary to quantify the self-organized design through suited statistical analysis tools. Results: We have investigated the self-assembly bundling process of nanowires fabricated by metal-assisted chemical etching (MACE). First, we have applied theoretical models in order to obtain a quantitative estimation of the driving forces leading to self-assembly. Then, we have studied the surfaces of the nanoarchitectures by means of multifractal analysis. We have found that these systems are not simple monofractals, but that the more complex paradigm of multifractality (different fractal dimensions across different scales) has to be applied to describe their morphology. Conclusion: The multifractal analysis approach has proven its ability to discriminate among different MACE nanoarchitectures. Additionally, it has demonstrated its capacity to measure the degree of homogeneity of these surfaces. Finally, a correlation between the growth conditions and the capacity dimension of the nanowires was obtained.

Improvement of Terahertz Wave Radiation for InAs Nanowires by Simple Dipping into Tap Water

We report improvement of terahertz (THz) wave radiation for Si-based catalyst-free InAs nanowires (NWs) by simple dipping into tap water (DTW). In addition, the possibility of using InAs NWs as a cost-effective method for biomedical applications is discussed by comparison to bulk InAs. The peak-to-peak current signals (PPCSs) of InAs NWs measured from THz time-domain spectroscopy increased with increasing NW height. For example, the PPCS of 10 μm-long InAs NWs was 2.86 times stronger than that of 2.1 μm-long NWs. The THz spectra of the InAs NWs obtained by applying a fast Fourier transformation to the current signals showed a main frequency of 0.5 THz, which can be applied to a variety of medical imaging systems. After the DTW process, structural variation was not observed for 2.1 μm-long InAs NWs. However, the top region of several InAs NWs with heights of 4.6 and 5.8 μm merged into a conical structure. InAs NWs with a height of 10 μm resulted in a bundle feature forming above the conical shape, where the length of bundle region was 4 μm. After the DTW process, the PPCS for 10 μm-long InAs NWs increased by 15 percent compared to that of the as-grown case.

Nucleation, Growth, and Bundling of GaN Nanowires in Molecular Beam Epitaxy: Disentangling the Origin of Nanowire Coalescence

We investigate the nucleation, growth, and coalescence of spontaneously formed GaN nanowires in molecular beam epitaxy combining the statistical analysis of scanning electron micrographs with Monte Carlo growth models. We find that (i) the nanowire density is limited by the shadowing of the substrate from the impinging fluxes by already existing nanowires, (ii) shortly after the nucleation stage, nanowire radial growth becomes negligible, and (iii) coalescence is caused by bundling of nanowires. The latter phenomenon is driven by the gain of surface energy at the expense of the elastic energy of bending and becomes energetically favorable once the nanowires exceed a certain critical length.

Improved control over spontaneously formed GaN nanowires in molecular beam epitaxy using a two-step growth process

We investigate the influence of modified growth conditions during the spontaneous formation of GaN nanowires (NWs) on Si(111) in plasma-assisted molecular beam epitaxy. We find that a two-step growth approach, where the substrate temperature is increased during the nucleation stage, is an efficient method to gain control over the area coverage, average diameter, and coalescence degree of GaN NW ensembles. Furthermore, we also demonstrate that the growth conditions employed during the incubation time that precedes nanowire nucleation do not influence the properties of the final nanowire ensemble. Therefore, when growing GaN NWs at elevated temperatures or with low Ga/N ratios, the total growth time can be reduced significantly by using more favorable growth conditions for nanowire nucleation during the incubation time.