Optimizing performance of silicon-based p-n junction photodetectors by the piezo-phototronic effect

Flexo-Phototronic Boosted Self-Powered Ultraviolet Detection in ZnAl:Layered Double Hydroxide Nanosheets/NiO Heterostructure

Developing self-powered and flexible optoelectronic sensors with high responsivity and speed is crucial for modern applications, motivating continuous efforts to enhance their performance. Flexo-phototronics is a less-explored but promising technique to elevate the performance of optoelectronics. Therefore, this work addresses the potential of utilizing the flexo-phototronic effect to enhance the performance of a flexible and self-powered ultraviolet photodetector (UV PD) based on ZnAl:LDH (layered double hydroxides) nanosheets (Ns)/NiO heterostructure. The vertically oriented ZnAl:LDH Ns are synthesized via a simple method involving the immersion of a sputtered 10% Al-doped ZnO thin film in deionized water at room ambient conditions. The fabricated PD exhibits an impressive response to 365 nm UV light, with high sensitivity in the order of 103. The device's photocurrent and responsivity are significantly enhanced by the flexo-phototronic effect, attributed to the flexoelectric properties of ZnAl:LDH Ns. Specifically, applying an inhomogeneous tensile strain of 2% boosted the device responsivity by 57.1% and improved its operational speed. Furthermore, a working model revealing the altered energy-band structure is demonstrated to elucidate the flexo-phototronic-induced boost in the photoresponse. The PD also demonstrated a sustainable performance under severe bending cycles, underlining the good flexibility of the device. The results presented in this study demonstrate a self-powered and flexible UV PD and provide a viable approach to augment the performance of optoelectronics through the flexo-phototronic effect.

Pyro-Phototronic Effect Enhanced Pyramid Structured p-Si/n-ZnO Nanowires Heterojunction Photodetector

The emergence of nanomaterials has brought about the development of miniature photodetectors into a new stage, and ZnO nanomaterials are currently one of the most popular research objects. Here, the performance of a photodetector consisting of micropyramid structured p-Si/n-ZnO NWs heterojunction constructed by an anisotropic chemical etching and hydrothermal method is optimized by using the pyro-phototronic effect, and the photoresponses of the device to 405 and 648 nm lasers are investigated. The results show that, with the introduction of pyro-phototronic effect, the photoresponsivity R_pyro increases to 208 times that of R_photo when the wavelength is 405 nm and the optical power density is 0.0693 mW/cm². Moreover, with the increase of the chopper frequency, the photocurrent increases by more than 3 times, and the photoresponsivity is also increased by a factor of 4.5, making it possible to detect ultrafast pulsed light. In addition, in order to increase the current collection efficiency, a thin film Al layer was deposited as the back electrode on the basis of the device, and the photocurrent and photoresponsivity are significantly improved. Finally, the coupling between the pyro-phototronic effect and the piezo-phototronic effect is analyzed by applying compressive strain to the photodetector. When the compressive strain is -1.02%, the photocurrent decreases by 31.4% and the photoresponsivity decreases by 27.9% due to the opposite direction between laser illumination induced pyroelectric polarization charges and compressive strain induced piezoelectric polarization charges. This work not only demonstrates the great potential of pyro-phototronic effect in enhancing the silicon-based heterojunction photodetectors for high-performance photodetection and ultrafast pulsed light detection but also provides assistance for a better understanding of the coupling mechanism between pyro-phototronic and piezo-phototronic effects.

Fundamentals and Applications of ZnO-Nanowire-Based Piezotronics and Piezo-Phototronics

The piezotronic effect is a coupling effect of semiconductor and piezoelectric properties. The piezoelectric potential is used to adjust the p-n junction barrier width and Schottky barrier height to control carrier transportation. At present, it has been applied in the fields of sensors, human-machine interaction, and active flexible electronic devices. The piezo-phototronic effect is a three-field coupling effect of semiconductor, photoexcitation, and piezoelectric properties. The piezoelectric potential generated by the applied strain in the piezoelectric semiconductor controls the generation, transport, separation, and recombination of carriers at the metal-semiconductor contact or p-n junction interface, thereby improving optoelectronic devices performance, such as photodetectors, solar cells, and light-emitting diodes (LED). Since then, the piezotronics and piezo-phototronic effects have attracted vast research interest due to their ability to remarkably enhance the performance of electronic and optoelectronic devices. Meanwhile, ZnO has become an ideal material for studying the piezotronic and piezo-phototronic effects due to its simple preparation process and better biocompatibility. In this review, first, the preparation methods and structural characteristics of ZnO nanowires (NWs) with different doping types were summarized. Then, the theoretical basis of the piezotronic effect and its application in the fields of sensors, biochemistry, energy harvesting, and logic operations (based on piezoelectric transistors) were reviewed. Next, the piezo-phototronic effect in the performance of photodetectors, solar cells, and LEDs was also summarized and analyzed. In addition, modulation of the piezotronic and piezo-phototronic effects was compared and summarized for different materials, structural designs, performance characteristics, and working mechanisms' analysis. This comprehensive review provides fundamental theoretical and applied guidance for future research directions in piezotronics and piezo-phototronics for optoelectronic devices and energy harvesting.

Pyro-phototronic effect enhanced broadband photodetection based on CdS nanorod arrays by magnetron sputtering

In this work, self-powered photodetectors (PDs) based on RF magnetron sputtering-fabricated CdS nanorod arrays and polished Si substrates were prepared for the first time. By introducing the pyro-phototronic effect of wurtzite CdS, the self-powered PDs exhibit a broadband response range from UV (365 nm) to IR (1310 nm) at zero bias, even beyond the bandgap limit of the material. Both the photoresponsivity and specific detectivity are also enhanced by 23.3 times compared with those only based on the photovoltaic effect. In addition, the rise and fall times of self-powered PDs are 70 μs and 90 μs under 980 nm laser illumination. This research not only expands the application of CdS nanostructures in the field of pyro-phototronics, but also greatly enriches the preparation methods of CdS based pyro-phototronics materials.

High-performance broadband photoresponse of self-powered Mg2Si/Si photodetectors

Infrared optoelectronic devices are capable of operating in harsh environments with outstanding confidentiality and reliability. Nevertheless, suffering from the large band gap value, most semiconductor materials are difficult to detect infrared light signals. Here, Mg₂Si/Si heterojunction photodetectors (PDs), which possess the advantages of low-cost, easy process, environmental friendliness, and compatibility with silicon CMOS technology, have been reported with a broadband spectral response as tested from 532 to 1550 nm under zero-bias. When the incident light wavelength is 808 nm, the Mg₂Si/Si photodetector (PD) has a responsivity of 1.04 A W^-1and a specific detectivity of 1.51 × 10¹²Jones. Furthermore, we find that the Ag nanoparticles (Ag_NPs) assembled on the Mg₂Si layer can greatly improve the performance of the Mg₂Si/Si PD. The responsivity and specific detectivity of Mg₂Si/Si device with Ag_NPs under 808 nm illumination are 2.55 A W^-1and 2.60 × 10¹²Jones, respectively. These excellent photodetection performances can be attributed to the high-quality of our grown Mg₂Si material and the strong built-in electric field effect in the heterojunction, which can be further enhanced by the local surface plasmon effect and local electromagnetic field induced by Ag_NPs. Our study would provide significant guidance for the development of new self-powered infrared PDs based on silicon materials.

Piezo-phototronic effect on photocatalysis, solar cells, photodetectors and light-emitting diodes

The piezo-phototronic effect (a coupling effect of piezoelectric, photoexcitation and semiconducting properties, coined in 2010) has been demonstrated to be an ingenious and robust strategy to manipulate optoelectronic processes by tuning the energy band structure and photoinduced carrier behavior. The piezo-phototronic effect exhibits great potential in improving the quantum yield efficiencies of optoelectronic materials and devices and thus could help increase the energy conversion efficiency, thus alleviating the energy shortage crisis. In this review, the fundamental principles and challenges of representative optoelectronic materials and devices are presented, including photocatalysts (converting solar energy into chemical energy), solar cells (generating electricity directly under light illumination), photodetectors (converting light into electrical signals) and light-emitting diodes (LEDs, converting electric current into emitted light signals). Importantly, the mechanisms of how the piezo-phototronic effect controls the optoelectronic processes and the recent progress and applications in the above-mentioned materials and devices are highlighted and summarized. Only photocatalysts, solar cells, photodetectors, and LEDs that display piezo-phototronic behavior are reviewed. Material and structural design, property characterization, theoretical simulation calculations, and mechanism analysis are then examined as strategies to further enhance the quantum yield efficiency of optoelectronic devices via the piezo-phototronic effect. This comprehensive overview will guide future fundamental and applied studies that capitalize on the piezo-phototronic effect for energy conversion and storage.

Recent advances in development of nanostructured photodetectors from ultraviolet to infrared region: A review

Herein, we aim to evaluate the photodetector performance of various nanostructured materials (thin films, 2-D nanolayers, 1-D nanowires, and 0-D quantum dots) in ultraviolet (UV), visible, and infrared (IR) regions. Specifically, semiconductor-based metal oxides such as ZnO, Ga₂O₃, SnO₂, TiO₂, and WO₃ are the majority preferred materials for UV photodetection due to their broad band gap, stability, and relatively simple fabrication processes. Whereas, the graphene-based hetero- and nano-structured composites are considered as prominent visible light active photodetectors. Interestingly, graphene exhibits broad band spectral absorption and ultra-high mobility, which derives graphene as a suitable candidate for visible detector. Further, due to the very low absorption rate of graphene (2%), various materials have been integrated with graphene (rGO-CZS, PQD-rGO, N-SLG, and GO doped PbI₂). In the case of IR photodetectors, quantum dot IR detectors prevails significant advantage over the quantum well IR detectors due to the 0-D quantum confinement and ability to absorb the light with any polarization. In such a way, we discussed the most recent developments on IR detectors using InAs and PbS quantum dot nanostructures. Overall, this review gives clear view on the development of suitable device architecture under prominent nanostructures to tune the photodetector performance from UV to IR spectral regions for wide-band photodetectors.

Large-area transparent flexible guanidinium incorporated MAPbI3 microstructures for high-performance photodetectors with enhanced stability

Unveiling the transparency and flexibility in perovskite-based photodetectors with superior photoresponse and environmental stability remains an open challenge. Here we report on guanidinium incorporated metal halide perovskite (MA_1-xGua_xPbI₃, x = 0 to 0.65) random percolative microstructure (RPM) fabrication using an ultra-fast spray coating technique. Remarkably, RPMs over a large area of 5 × 5 cm² on flexible substrates with a transparency of ∼50% can be achieved with enriched environmental stability. Transparent photodetectors based on MA_1-xGua_xPbI₃ (x = 0.12) RPMs manifest excellent performance with a responsivity of 187 A W^-1, a detectivity of 2.23 × 10¹² Jones and an external quantum efficiency of 44 115%. Additionally, the photodetectors exhibited superior mechanical flexibility under a wide range of bending angles and large number of binding cycles. Integrating features including transparency, high performance, stability, flexibility and scalability within a photodetector is unmatched and holds potential for novel applications in transparent and wearable optoelectronic devices.

Surface/Interface Engineering for Constructing Advanced Nanostructured Photodetectors with Improved Performance: A Brief Review

Semiconductor-based photodetectors (PDs) convert light signals into electrical signals via a photon–matter interaction process, which involves surface/interface carrier generation, separation, and transportation of the photo-induced charge media in the active media, as well as the extraction of these charge carriers to external circuits of the constructed nanostructured photodetector devices. Because of the specific electronic and optoelectronic properties in the low-dimensional devices built with nanomaterial, surface/interface engineering is broadly studied with widespread research on constructing advanced devices with excellent performance. However, there still exist some challenges for the researchers to explore corresponding mechanisms in depth, and the detection sensitivity, response speed, spectral selectivity, signal-to-noise ratio, and stability are much more important factors to judge the performance of PDs. Hence, researchers have proposed several strategies, including modification of light absorption, design of novel PD heterostructures, construction of specific geometries, and adoption of specific electrode configurations to modulate the charge-carrier behaviors and improve the photoelectric performance of related PDs. Here, in this brief review, we would like to introduce and summarize the latest research on enhancing the photoelectric performance of PDs based on the designed structures by considering their surface/interface engineering and how to obtain advanced nanostructured photo-detectors with improved performance, which could be applied to design and fabricate novel low-dimensional PDs with ideal properties in the near future.

Enhanced Flexibility and Stability in Perovskite Photodiode-Solar Cell Nanosystem Using MoS2 Electron-Transport Layer

Hybrid organic-inorganic perovskites and MoS₂ are highly attractive as emerging materials for various kinds of optoelectronic devices. Here, we first report perovskite photodiode-solar cell nanosystems (PPSNs) by employing bilayer (BL) MoS₂ and triethylenetetramine-doped graphene (TETA-GR) as the electron-transport layer (ETL) and transparent conductive electrode (TCE), respectively. The rigid/flexible PPSNs exhibit 0.42/0.40 AW^-1 responsivity (R), 37.2/80.1 pW Hz^-1/2 noise equivalent power, 1.1 × 10¹⁰/5.0 × 10⁹ cm Hz^1/2 W^-1 specific detectivity at a zero-bias photodiode mode (i.e., self-power operation), similar to or even greater than those of previous reports, and 14.27/12.12% power conversion efficiency at a photovoltaic mode. The PPSNs show high long-term stabilities by maintaining more than 78% of the initial R for 30 days. The flexible PPSNs maintain about 80% of the original R during 1000 bending tests at 4 mm radius of curvature, indicating excellent mechanical properties. These high performances result from the enhanced TCE properties, well-matched band offsets at the cathode/ETL/active layer interfaces, and the reduced carrier recombination/charge-transfer resistance by the use of TETA-GR TCE and BL-MoS₂ ETL.

Piezotronics and Piezo-phototronics of Third Generation Semiconductor Nanowires

With the fast development of nanoscience and nanotechnology in the last 30 years, semiconductor nanowires have been widely investigated in the areas of both electronics and optoelectronics. Among them, representatives of third generation semiconductors, such as ZnO and GaN, have relatively large spontaneous polarization along their longitudinal direction of the nanowires due to the asymmetric structure in their c-axis direction. Two-way or multiway couplings of piezoelectric, photoexcitation, and semiconductor properties have generated new research areas, such as piezotronics and piezo-phototronics. In this review, an in-depth discussion of the mechanisms and applications of nanowire-based piezotronics and piezo-phototronics is presented. Research on piezotronics and piezo-phototronics has drawn much attention since the effective manipulation of carrier transport, photoelectric properties, etc. through the application of simple mechanical stimuli and, conversely, since the design of new strain sensors based on the strain-induced change in semiconductor properties.

Zinc oxide ultraviolet photodetectors: rapid progress from conventional to self-powered photodetectors

Currently, the development of ultraviolet (UV) photodetectors (PDs) has attracted the attention of the research community because of the vast range of applications of photodetectors in modern society. A variety of wide-band gap nanomaterials have been utilized for UV detection to achieve higher photosensitivity. Specifically, zinc oxide (ZnO) nanomaterials have attracted significant attention primarily due to their additional properties such as piezo-phototronic and pyro-phototronic effects, which allow the fabrication of high-performance and low power consumption-based UV PDs. This article primarily focuses on the recent development of ZnO nanostructure-based UV PDs ranging from nanomaterials to architectural device design. A brief overview of the photoresponse characteristics of UV PDs and potential ZnO nanostructures is presented. Moreover, the recent development in self-powered PDs and implementation of the piezo-phototronic effect, plasmonic effect and pyro-phototronic effect for performance enhancement is highlighted. Finally, the research perspectives and future research direction related to ZnO nanostructures for next-generation UV PDs are summarized.

Piezo-phototronic Effect Enhanced Efficient Flexible Perovskite Solar Cells

Tremendous work has been made recently to improve the power conversion efficiencies (PCEs) of perovskite solar cells (PSCs); the best reported value is now over 23%. However, further improving the PCEs of PSCs is challenged by material properties, device stability, and packaging technologies. Here, we report a new approach to increase the PCEs of flexible PSCs via introducing the piezo-phototronic effect in the PSCs by growing an array of ZnO nanowires on flexible plastic substrates, which act as the electron-transport layer for PSCs. From the piezo-phototronic effect, the absolute PCE was improved from 9.3 to 12.8% for flexible perovskite solar cells under a static mechanical strain of 1.88%, with a ∼40% enhancement but no change in the components of materials and device structure. A corresponding working model was proposed to elucidate the strategy to boost the performance of the PSCs. These findings present a general approach to improve PCEs of flexible PSCs without changing their fundamental materials.

Piezo-phototronic Effect Enhanced Photodetector Based on CH3NH3PbI3 Single Crystals

Piezoelectric organic-inorganic lead halide perovskites have recently attracted much attention in the field of optoelectronic devices. However, their piezoelectric properties as a possible way to modulate device performances have rarely been reported. Here, we study experimentally a photodetector based on CH₃NH₃PbI₃(MAPbI₃) single crystals, whose performance is effectively modulated via an emerging effect-the piezo-phototronic effect, which is to use the piezoelectric polarization charges to tune the optoelectronic processes at the interface. A piezoelectric coefficient of 10.81 pm/V of the CH₃NH₃PbI₃ single crystal is obtained. Under 680 nm laser illumination with a power density of 3.641 mW/cm² and at an external bias of 2 V, compared to the case without straining, the light current of the photodetector is enhanced by ∼120% when a 43.48 kPa compressive pressure is applied. The response speed of the photocurrent is 3 and 2 times faster than the cases without applying pressure for the light-on and light-off states, respectively. This work proves that the performance of the photodetector based on MAPbI₃ single crystals can be effectively enhanced by the piezo-phototronic effect, providing a good method for optimizing the performance of future perovskite-based optoelectronic devices.

Piezo-phototronic mediated enhanced photodetection characteristics of plasmonic Au-g-C3N4/CdS/ZnO based hybrid heterojunctions on a flexible platform

We have studied the piezo-phototronic induced enhancement in the photo-response of CdS/ZnO heterojunctions attached with plasmonic Au nanoparticle loaded 2D-graphitic carbon nitride (g-C3N4). The hybrid g-C3N4/CdS/ZnO heterojunction favours the charge carrier separation through the formation of a step-like band alignment. Furthermore, the integration of plasmonic Au loaded g-C3N4 nanosheets on the conventional CdS/ZnO heterojunction facilitates improved visible light absorption properties. The heterojunction device on a flexible platform under the application of a strain (∼0.017%) exhibits ∼102 times higher photoresponse over the control sample at a constant bias of ∼2 V. The variation in the photo-response under different bending conditions has been explained in terms of the improved charge transport through the modified energy bands at the interface of ZnO. The improved piezo-phototronic properties originated from the plasmonic properties of Au loaded g-C3N4 and the piezoelectric characteristics of c-axis oriented ZnO films may be used for future flexible photonic devices.

In2O3 Nanowire Field-Effect Transistors with Sub-60 mV/dec Subthreshold Swing Stemming from Negative Capacitance and Their Logic Applications

Heat dissipation is a key issue for scaling metal-oxide-semiconductor field-effect transistors (MOSFETs). The Boltzmann distribution of electrons imposes a physical limit on the subthreshold swing (SS), which impedes both the reduction of the switching energy and the further increase of the device density. The negative capacitance effect is proposed to rescue MOSFETs from this phenomenon called "Boltzmann tyranny". Herein, we report In₂O₃ nanowire (NW) transistors with SS values in the sub-60 mV/dec region, which utilize the ferroelectric P(VDF-TrFE) as the dielectric layer. An ultralow SS down to ∼10 mV/dec is observed and spans over 5 orders of magnitude in the drain current. Meanwhile, a high on/off ratio of more than 10⁸ and a transconductance ( g_m) of 2.3 μS are obtained simultaneously at V_d = 0.1 V. The results can be understood by the "voltage amplification" effect induced from the negative capacitance effect. Moreover, the steep slope FET-based inverters indicate a high voltage gain of 41.6. In addition to the NOR and NAND gates, the Schmitt trigger inverters containing only one steep slope FET are demonstrated. This work demonstrates an avenue for low-power circuit design with a steep SS.

Ferroelectric and Piezoelectric Effects on the Optical Process in Advanced Materials and Devices

Piezoelectric and ferroelectric materials have shown great potential for control of the optical process in emerging materials. There are three ways for them to impact on the optical process in various materials. They can act as external perturbations, such as ferroelectric gating and piezoelectric strain, to tune the optical properties of the materials and devices. Second, ferroelectricity and piezoelectricity as innate attributes may exist in some optoelectronic materials, which can couple with other functional features (e.g., semiconductor transport, photoexcitation, and photovoltaics) in the materials giving rise to unprecedented device characteristics. The last way is artificially introducing optical functionalities into ferroelectric and piezoelectric materials and devices, which provides an opportunity for investigating the intriguing interplay between the parameters (e.g., electric field, temperature, and strain) and the introduced optical properties. Here, the tuning strategies, fundamental mechanisms, and recent progress in ferroelectric and piezoelectric effects modulating the optical properties of a wide spectrum of materials, including lanthanide-doped phosphors, quantum dots, 2D materials, wurtzite-type semiconductors, and hybrid perovskites, are presented. Finally, the future outlook and challenges of this exciting field are suggested.

Self-Powered Si/CdS Flexible Photodetector with Broadband Response from 325 to 1550 nm Based on Pyro-phototronic Effect: An Approach for Photosensing below Bandgap Energy

Cadmium sulfide (CdS) has received widespread attention as the building block of optoelectronic devices due to its extraordinary optoelectronic properties, low work function, and excellent thermal and chemical stability. Here, a self-powered flexible photodetector (PD) based on p-Si/n-CdS nanowires heterostructure is fabricated. By introducing the pyro-phototronic effect derived from wurtzite structured CdS, the self-powered PD shows a broadband response range, even beyond the bandgap limitation, from UV (325 nm) to near infrared (1550 nm) under zero bias with fast response speed. The light-induced pyroelectric potential is utilized to modulate the optoelectronic processes and thus improve the photoresponse performance. Lasers with different wavelengths have different effects on the self-powered PDs and corresponding working mechanisms are carefully investigated. Upon 325 nm laser illumination, the rise time and fall time of the self-powered PD are 245 and 277 µs, respectively, which are faster than those of most previously reported CdS-based nanostructure PDs. Meanwhile, the photoresponsivity R and specific detectivity D* regarding to the relative peak-to-peak current are both enhanced by 67.8 times, compared with those only based on the photovoltaic effect-induced photocurrent. The self-powered flexible PD with fast speed, stable, and broadband response is expected to have extensive applications in various environments.

Threshold Switching Induced by Controllable Fragmentation in Silver Nanowire Networks

Silver nanowire (Ag NW) networks have been widely studied because of a great potential in various electronic devices. However, nanowires usually undergo a fragmentation process at elevated temperatures due to the Rayleigh instability that is a result of reduction of surface/interface energy. In this case, the nanowires become completely insulating due to the formation of randomly distributed Ag particles with a large distance and further applications are hindered. Herein, we demonstrate a novel concept based on the combination of ultraviolet/ozone irradiation and a low-temperature annealing process to effectively utilize and control the fragmentation behavior to realize the resistive switching performances. In contrast to the conventional fragmentation, the designed Ag/AgO_x interface facilitates a unique morphology of short nanorod-like segments or chains of tiny Ag nanoparticles with a very small spacing distance, providing conduction paths for achieving the tunneling process between the isolated fragments under the electric field. On the basis of this specific morphology, the Ag NW network has a tunable resistance and shows volatile threshold switching characteristics with a high selectivity, which is the ON/OFF current ratio in selector devices. Our concept exploits a new function of Ag NW network, i.e., resistive switching, which can be developed by designing a controllable fragmentation.

Enhancing performance of Ag–ZnO–Ag UV photodetector by piezo-phototronic effect

In this work, an ultraviolet (UV) photodetector based on a ZnO nanowires (NWs) array with metal–semiconductor–metal Schottky junction structure was successfully fabricated on a flexible polyester fibre substrate by a low-temperature hydrothermal method. Subjected to a 0.2% tensile strain at −1 V, the I_light and sensitivity of the as-prepared UV photodetector are lifted by 82% and 130%, respectively. Furthermore, the response speed and recovery speed are significantly raised under the same tensile strain. The working principle can be explained as that the Schottky barrier height (SBH) is effectively improved by the negative strain-induced polarization at the metal–ZnO interface which is favorable for the separation of photogenerated electron–hole pairs. This work not only provides a facile and promising means to optimize the performance of a ZnO based MSM photodetector by applying a tensile strain but also opens up the way for fabrication and integration of ZnO photodetectors on flexible polyester fiber substrates.

An ultraviolet photodetector based on a ZnO nanowires with metal–semiconductor–metal Schottky structure was fabricated on a flexible polyester fibre substrate.

The light-induced pyro-phototronic effect improving a ZnO/NiO/Si heterojunction photodetector for selectively detecting ultraviolet or visible illumination

In this work, we fabricate a ZnO/NiO/Si heterojunction photodetector, which successfully realizes selective detection of UV or visible light in a single photodetector. In addition, the pyro-phototronic effect has been confirmed as an effective approach for enhancing the performance of photodetectors based on ZnO. The pyro-phototronic effect is carefully studied by comparing with a ZnO/Si heterojunction photodetector under UV and visible illumination at different bias voltages. To enhance the photodetector's wavelength selectivity, the parameters and structure are further optimized for the ZnO/NiO/SiO₂/Si heterojunction photodetector. The newly designed photodetector may be used to selectively detect and distinguish UV and visible illumination in a single photodetector.

Flexible Photodetectors Based on Novel Functional Materials

Flexible photodetectors have attracted a great deal of research interest in recent years due to their great possibilities for application in a variety of emerging areas such as flexible, stretchable, implantable, portable, wearable and printed electronics and optoelectronics. Novel functional materials, including materials with zero-dimensional (0D) and one-dimensional (1D) inorganic nanostructures, two-dimensional (2D) layered materials, organic semiconductors and perovskite materials, exhibit appealing electrical and optoelectrical properties, as well as outstanding mechanical flexibility, and have been widely studied as building blocks in cost-effective flexible photodetection. Here, we comprehensively review the outstanding performance of flexible photodetectors made from these novel functional materials reported in recent years. The photoresponse characteristics and flexibility of the devices will be discussed systematically. Summaries and challenges are provided to guide future directions of this vital research field.

A Photodetector Based on p-Si/n-ZnO Nanotube Heterojunctions with High Ultraviolet Responsivity

Enhanced ultraviolet (UV) photodetectors (PDs) with high responsivity comparable to that of visible and infrared photodetectors are needed for commercial applications. n-Type ZnO nanotubes (NTs) with high-quality optical, structural, and electrical properties on a p-type Si(100) substrate are successfully fabricated by pulsed laser deposition (PLD) to produce a UV PD with high responsivity, for the first time. We measure the current-voltage characteristics of the device under dark and illuminated conditions and demonstrated the high stability and responsivity (that reaches ∼101.2 A W^-1) of the fabricated UV PD. Time-resolved spectroscopy is employed to identify exciton confinement, indicating that the high PD performance is due to optical confinement, the high surface-to-volume ratio, the high structural quality of the NTs, and the high photoinduced carrier density. The superior detectivity and responsivity of our NT-based PD clearly demonstrate that fabrication of high-performance UV detection devices for commercial applications is possible.

Piezo-Phototronic Effect on Selective Electron or Hole Transport through Depletion Region of Vis-NIR Broadband Photodiode

Silicon underpins nearly all microelectronics today and will continue to do so for some decades to come. However, for silicon photonics, the indirect band gap of silicon and lack of adjustability severely limit its use in applications such as broadband photodiodes. Here, a high-performance p-Si/n-ZnO broadband photodiode working in a wide wavelength range from visible to near-infrared light with high sensitivity, fast response, and good stability is reported. The absorption of near-infrared wavelength light is significantly enhanced due to the nanostructured/textured top surface. The general performance of the broadband photodiodes can be further improved by the piezo-phototronic effect. The enhancement of responsivity can reach a maximum of 78% to 442 nm illumination, the linearity and saturation limit to 1060 nm light are also significantly increased by applying external strains. The photodiode is illuminated with different wavelength lights to selectively choose the photogenerated charge carriers (either electrons or holes) passing through the depletion region, to investigate the piezo-phototronic effect on electron or hole transport separately for the first time. This is essential for studying the basic principles in order to develop a full understanding about piezotronics and it also enables the development of the better performance of optoelectronics.

Enhanced Performance of a Self-Powered Organic/Inorganic Photodetector by Pyro-Phototronic and Piezo-Phototronic Effects

Self-powered photodetectors (PDs) have long been realized by utilizing photovoltaic effect and their performances can be effectively enhanced by introducing the piezo-phototronic effect. Recently, a novel pyro-phototronic effect is invented as an alternative approach for performance enhancement of self-powered PDs. Here, a self-powered organic/inorganic PD is demonstrated and the influences of externally applied strain on the pyro-phototronic and the photovoltaic effects are thoroughly investigated. Under 325 nm 2.30 mW cm^-2 UV illumination and at a -0.45% compressive strain, the PD's photocurrent is dramatically enhanced from ≈14.5 to ≈103 nA by combining the pyro-phototronic and piezo-phototronic effects together, showing a significant improvement of over 600%. Theoretical simulations have been carried out via the finite element method to propose the underlying working mechanism. Moreover, the pyro-phototronic effect can be introduced by applying a -0.45% compressive strain to greatly enhance the PD's response to 442 nm illumination, including photocurrent, rise time, and fall time. This work provides in-depth understandings about the pyro-phototronic and the piezo-phototronic effects on the performances of self-powered PD to light sources with different wavelengths and indicates huge potential of these two effects in optoelectronic devices.

Gold nanoparticle-embedded silk protein-ZnO nanorod hybrids for flexible bio-photonic devices

Silk protein has been used as a biopolymer substrate for flexible photonic devices. Here, we demonstrate ZnO nanorod array hybrid photodetectors on Au nanoparticle-embedded silk protein for flexible optoelectronics. Hybrid samples exhibit optical absorption at the band edge of ZnO as well as plasmonic energy due to Au nanoparticles, making them attractive for selective UV and visible wavelength detection. The device prepared on Au-silk protein shows a much lower dark current and a higher photo to dark-current ratio of ∼10⁵ as compared to the control sample without Au nanoparticles. The hybrid device also exhibits a higher specific detectivity due to higher responsivity arising from the photo-generated hole trapping by Au nanoparticles. Sharp pulses in the transient photocurrent have been observed in devices prepared on glass and Au-silk protein substrates due to the light induced pyroelectric effect of ZnO, enabling the demonstration of self-powered photodetectors at zero bias. Flexible hybrid detectors have been demonstrated on Au-silk/polyethylene terephthalate substrates, exhibiting characteristics similar to those fabricated on rigid glass substrates. A study of the performance of photodetectors with different bending angles indicates very good mechanical stability of silk protein based flexible devices. This novel concept of ZnO nanorod array photodetectors on a natural silk protein platform provides an opportunity to realize integrated flexible and self-powered bio-photonic devices for medical applications in near future.

Self-Powered Ultrabroadband Photodetector Monolithically Integrated on a PMN-PT Ferroelectric Single Crystal

Photodetectors capable of detecting two or more bands simultaneously with a single system have attracted extensive attentions because of their critical applications in image sensing, communication, and so on. Here, we demonstrate a self-powered ultrabroadband photodetector monolithically integrated on a 0.72Pb(Mg_1/3Nb_2/3)O₃-0.28PbTiO₃ (PMN-28PT) single crystal. By combining the optothermal and pyroelectric effect, the multifunctional PMN-28PT single crystal can response to a wide wavelength range from UV to terahertz (THz). At room temperature, the photodetector could generate a pyroelectric current under the intermittent illumination of incident light in absence of external bias. A systematic study of the photoresponse was investigated. The pyroelectric current shows an almost linear relationship to illumination intensity. Benefiting from the excellent pyroelectric property of PMN-28PT single crystal and the optimized device architecture, the device exhibited a dramatic improvement in operation frequency up to 3 kHz without any obvious degradation in sensitivity. Such a self-powered photodetector with ultrabroadband response may open a window for the novel application of ferroelectric materials in optoelectronics.

Piezo-phototronic effect enhanced UV photodetector based on CuI/ZnO double-shell grown on flexible copper microwire

In this work, we present a facile, low-cost, and effective approach to fabricate the UV photodetector with a CuI/ZnO double-shell nanostructure which was grown on common copper microwire. The enhanced performances of Cu/CuI/ZnO core/double-shell microwire photodetector resulted from the formation of heterojunction. Benefiting from the piezo-phototronic effect, the presentation of piezocharges can lower the barrier height and facilitate the charge transport across heterojunction. The photosensing abilities of the Cu/CuI/ZnO core/double-shell microwire detector are investigated under different UV light densities and strain conditions. We demonstrate the I-V characteristic of the as-prepared core/double-shell device; it is quite sensitive to applied strain, which indicates that the piezo-phototronic effect plays an essential role in facilitating charge carrier transport across the CuI/ZnO heterojunction, then the performance of the device is further boosted under external strain.

Ultrafast Response p-Si/n-ZnO Heterojunction Ultraviolet Detector Based on Pyro-Phototronic Effect

A light-self-induced pyro-phototronic effect in wurtzite ZnO nanowires is proposed as an effective approach to achieve ultrafast response ultraviolet sensing in p-Si/n-ZnO heterostructures. The relatively long response/recovery time of zinc-oxide-based ultraviolet sensors in air/vacuum has long been an obstacle to developing such detectors for practical applications. The response/recovery time and photoresponsivity are greatly improved by the pyro-phototronic effect.

Tuning Light Emission of a Pressure-Sensitive Silicon/ZnO Nanowires Heterostructure Matrix through Piezo-phototronic Effects

Based on white light emission at silicon (Si)/ZnO hetrerojunction, a pressure-sensitive Si/ZnO nanowires heterostructure matrix light emitting diode (LED) array is developed. The light emission intensity of a single heterostructure LED is tuned by external strain: when the applied stress keeps increasing, the emission intensity first increases and then decreases with a maximum value at a compressive strain of 0.15-0.2%. This result is attributed to the piezo-phototronic effect, which can efficiently modulate the LED emission intensity by utilizing the strain-induced piezo-polarization charges. It could tune the energy band diagrams at the junction area and regulate the optoelectronic processes such as charge carriers generation, separation, recombination, and transport. This study achieves tuning silicon based devices through piezo-phototronic effect.

Progress in Piezo-Phototronic-Effect-Enhanced Light-Emitting Diodes and Pressure Imaging

Wurtzite materials exhibit both semiconductor and piezoelectric properties under strains due to the non-central symmetric crystal structures. The three-way coupling of semiconductor properties, piezoelectric polarization and optical excitation in ZnO, GaN, CdS and other piezoelectric semiconductors leads to the emerging field of piezo-phototronics. This effect can efficiently manipulate the emission intensity of light-emitting diodes (LEDs) by utilizing the piezo-polarization charges created at the junction upon straining to modulate the energy band diagrams and the optoelectronic processes, such as generation, separation, recombination and/or transport of charge carriers. Starting from fundamental physics principles, recent progress in piezo-phototronic-effect-enhanced LEDs is reviewed; following their development from single-nanowire pressure-sensitive devices to high-resolution array matrices for pressure-distribution mapping applications. The piezo-phototronic effect provides a promising method to enhance the light emission of LEDs based on piezoelectric semiconductors through applying static strains, and may find perspective applications in various optoelectronic devices and integrated systems.

Enhancing performance of ZnO/NiO UV photodetector by piezo-phototronic effect

The performance of the ZnO/NiO UV photodetector is enhanced by piezo-phototronic effect.

Recent Progress in Electronic Skin

The skin is the largest organ of the human body and can sense pressure, temperature, and other complex environmental stimuli or conditions. The mimicry of human skin's sensory ability via electronics is a topic of innovative research that could find broad applications in robotics, artificial intelligence, and human-machine interfaces, all of which promote the development of electronic skin (e-skin). To imitate tactile sensing via e-skins, flexible and stretchable pressure sensor arrays are constructed based on different transduction mechanisms and structural designs. These arrays can map pressure with high resolution and rapid response beyond that of human perception. Multi-modal force sensing, temperature, and humidity detection, as well as self-healing abilities are also exploited for multi-functional e-skins. Other recent progress in this field includes the integration with high-density flexible circuits for signal processing, the combination with wireless technology for convenient sensing and energy/data transfer, and the development of self-powered e-skins. Future opportunities lie in the fabrication of highly intelligent e-skins that can sense and respond to variations in the external environment. The rapidly increasing innovations in this area will be important to the scientific community and to the future of human life.

Light-induced pyroelectric effect as an effective approach for ultrafast ultraviolet nanosensing

Zinc oxide is potentially a useful material for ultraviolet detectors; however, a relatively long response time hinders practical implementation. Here by designing and fabricating a self-powered ZnO/perovskite-heterostructured ultraviolet photodetector, the pyroelectric effect, induced in wurtzite ZnO nanowires on ultraviolet illumination, has been utilized as an effective approach for high-performance photon sensing. The response time is improved from 5.4 s to 53 μs at the rising edge, and 8.9 s to 63 μs at the falling edge, with an enhancement of five orders in magnitudes. The specific detectivity and the responsivity are both enhanced by 322%. This work provides a novel design to achieve ultrafast ultraviolet sensing at room temperature via light-self-induced pyroelectric effect. The newly designed ultrafast self-powered ultraviolet nanosensors may find promising applications in ultrafast optics, nonlinear optics, optothermal detections, computational memories and biocompatible optoelectronic probes.

Piezotronic Effect: An Emerging Mechanism for Sensing Applications

Strain-induced polarization charges in a piezoelectric semiconductor effectively modulate the band structure near the interface and charge carrier transport. Fundamental investigation of the piezotronic effect has attracted broad interest, and various sensing applications have been demonstrated. This brief review discusses the fundamentals of the piezotronic effect, followed by a review highlighting important applications for strain sensors, pressure sensors, chemical sensors, photodetectors, humidity sensors and temperature sensors. Finally, the review offers some perspectives and outlook for this new field of multi-functional sensing enabled by the piezotronic effect.