Computational and Experimental Studies on the Thermolysis Mechanism of Zirconium and Hafnium Tetraalkyl Complexes. Difference between Titanium and Zirconium Complexes

Mechanisms of Thermal Atomic Layer Etching

ConspectusAtomic layer control of semiconductor processing is needed as critical dimensions are progressively reduced below the 10 nm scale. Atomic layer deposition (ALD) methods are meeting this challenge and produce conformal thin film growth on high aspect ratio features. Atomic layer etching (ALE) techniques are also required that can remove material with atomic layer precision. ALE processes are defined using sequential, self-limiting reactions based on surface modification and volatile release. Plasma ALE methods employ energetic ion or neutral species to release the modified material anisotropically using sputtering. In contrast, thermal ALE processes utilize gas species to release the modified material isotropically using thermal reactions. Thermal ALE can be viewed as the "reverse of ALD".There are a number of mechanisms for thermal ALE that have developed over the last five years. This Account will first examine the fluorination and ligand-exchange mechanism for thermal ALE. This mechanism is applicable for many metal oxide and metal nitride materials. Subsequently, the "conversion etch" mechanisms will be explored that are derived from the conversion of the surface of the substrate to a new material. The "conversion etch" mechanisms are needed when the initial material does not have a viable etching pathway via fluorination and ligand-exchange or when the material has a volatile fluoride. The thermal ALE mechanisms founded on either oxidation or halogenation of the initial substrate will then be examined with an emphasis on metal thermal ALE. Lastly, thermal ALE mechanisms will be considered that are based on self-limiting surface ligands or temperature modulation mechanisms. These various mechanisms offer a wide range of pathways to remove material isotropically with atomic layer control.Thermal ALE will be required to fabricate advanced semiconductor devices. This fabrication will increasingly occur beyond the limits of lithography and will extend into the third dimension. The situation is like Manhattan during the advent of skyscrapers. When there was no more room on the ground, building started to move to the third dimension. Three-dimensional devices require a sequential series of deposition and etching steps to build the skyscraper structures. Some etching needs to be vertical and anisotropic to make the elevator shafts. Other etching needs to be horizontal and isotropic to form the hallways. The mechanisms of thermal ALE will be critical for the definition of isotropic ALE processes.Reaching beyond the limits of lithography will also increase the need for maskless processing. The mechanisms of thermal ALE lead to strategies for selective etching of one material in the presence of many materials. In addition, area-selective deposition can benefit from the ability of thermal ALE to enhance deposition on the desired growth surfaces by removing deposition from other surrounding surfaces. Looking ahead, thermal ALE will continue to provide unique capabilities and will grow in importance as a nanofabrication processing technique.

Prospects for Thermal Atomic Layer Etching Using Sequential, Self-Limiting Fluorination and Ligand-Exchange Reactions

Thermal atomic layer etching (ALE) of Al2O3 and HfO2 using sequential, self-limiting fluorination and ligand-exchange reactions was recently demonstrated using HF and tin acetylacetonate (Sn(acac)2) as the reactants. This new thermal pathway for ALE represents the reverse of atomic layer deposition (ALD) and should lead to isotropic etching. Atomic layer deposition and ALE can together define the atomic layer growth and removal steps required for advanced semiconductor fabrication. The thermal ALE of many materials should be possible using fluorination and ligand-exchange reactions. The chemical details of ligand-exchange can lead to selective ALE between various materials. Thermal ALE could produce conformal etching in high-aspect-ratio structures. Thermal ALE could also yield ultrasmooth thin films based on deposit/etch-back methods. Enhancement of ALE rates and possible anisotropic ALE could be achieved using radicals or ions together with thermal ALE.

Molecular single-bond covalent radii for elements 1-118

A self-consistent system of additive covalent radii, R(AB)=r(A) + r(B), is set up for the entire periodic table, Groups 1-18, Z=1-118. The primary bond lengths, R, are taken from experimental or theoretical data corresponding to chosen group valencies. All r(E) values are obtained from the same fit. Both E-E, E-H, and E-CH(3) data are incorporated for most elements, E. Many E-E' data inside the same group are included. For the late main groups, the system is close to that of Pauling. For other elements it is close to the methyl-based one of Suresh and Koga [J. Phys. Chem. A 2001, 105, 5940] and its predecessors. For the diatomic alkalis MM' and halides XX', separate fits give a very high accuracy. These primary data are then absorbed with the rest. The most notable exclusion are the transition-metal halides and chalcogenides which are regarded as partial multiple bonds. Other anomalies include H(2) and F(2). The standard deviation for the 410 included data points is 2.8 pm.

Reactions of d0 Group 4 Amides with Dioxygen. Preparation of Unusual Oxo Aminoxy Complexes and Theoretical Studies of Their Formation

Reactions of d0 amides M(NMe2)4 (M = Zr, 1; Hf, 2) with O2 have been found to yield unusual trinuclear oxo aminoxide complexes M3(NMe2)6(mu-NMe2)3(mu3-O)(mu3-ONMe2) (M = Zr, 3; Hf, 4) in high yields. Tetramethylhydrazine Me2N-NMe2 was also observed in the reaction mixtures. Crystal structures of 3 and 4 have been determined. Density functional theory calculations have been performed to explore the mechanistic pathways in the reactions of model complexes Zr(NR2)4 (R = H, 5; Me, 1) and [Zr(NR2)4]2 (R = H, 5a; Me, 1a) with triplet O2. Monomeric and dimeric reaction pathways in the formation of the Zr complex 3 are proposed.

Hafnium Oxide and Zirconium Oxide Atomic Layer Deposition: Initial Precursor and Potential Side-Reaction Product Pathways with H/Si(100)-2×1

Hybrid density functional calculations have been carried out using cluster models of the H/Si(100)-2 x 1 surface to investigate the mechanistic details of the initial surface reactions occurring in the atomic layer deposition of hafnium and zirconium oxides (HfO2 and ZrO2). Reaction pathways involving the metal precursors ZrCl4, Zr(CH3)4, HfCl4, and Hf(CH3)4 have been examined. Pathways leading to the formation of a Zr-Si or Hf-Si linkage show a significant sensitivity to the identity of the leaving group, with chloride loss reactions being both kinetically and thermodynamically less favorable than reactions leading to the loss of a methyl group. The energetics of the Zr(CH3)4 and Hf(CH3)4 reactions are similar with an overall exothermicity of 0.3-0.4 eV and a classical barrier height of 1.1-1.2 eV. For the reaction between H2O and the H/Si(100)-2 x 1 surface, the activation energy and overall reaction enthalpy are 1.6 and -0.8 eV, respectively. Due to contamination, trace amounts of H2O may be encountered by metal precursors, leading to the formation of minor species that can lead to unanticipated side-reaction pathways. Such gas-phase reactions between the halogenated and alkylated metal precursors and H2O are exothermic with small or no reaction barriers, allowing for the possibility of metal precursor hydroxylation before the H/Si surface is encountered. Of the contaminant surface reaction pathways, the most kinetically favorable corresponds to the surface -OH deposition. Interestingly, for the hydroxylated metal precursors, a unique reaction pathway resulting in the direct formation of Si-O-Zr and Si-O-Hf linkages has been identified and found to be the most thermodynamically stable pathway available, being exothermic by approximately 1.0 eV.

Zirconium, Hafnium, and Tantalum Amide Silyl Complexes: Their Preparation and Conversion to Metallaheterocyclic Complexes via γ-Hydrogen Abstraction by Silyl Ligands

New transition metal silyl amide complexes (Me(2)N)(3)Ta[N(SiMe(3))(2)](SiPh(2)Bu(t)) (1) and (Me(2)N)M[N(SiMe(3))(2)](2)(SiPh(2)Bu(t)) (M = Zr, 2a, and Hf, 2b) were found to undergo gamma-H abstraction by the silyl ligands to give metallaheterocyclic complexes (3) and (M = Zr, 4a, and Hf, 4b), respectively. The conversion of 1 to 3 follows first-order kinetics with DeltaH() = 23.6(1.6) kcal/mol and DeltaS() = 3(5) eu between 288 and 313 K. The formation of 4a from (Me(2)N)Zr[N(SiMe(3))(2)](2)Cl (5a) and Li(THF)(2)SiPh(2)Bu(t) (6) involves the formation of the intermediate 2a, followed by gamma-H abstraction. Kinetic studies of these consecutive reactions, a second-order reaction to give 2a and then a first-order gamma-H abstraction to give 4a, were conducted by an analytical method and a numerical method. At 278 K, the rate constants k(1) and k(2) for the two consecutive reactions are 2.17(0.03) x 10(-)(3) M(-)(1) s(-)(1) and 5.80(0.15) x 10(-)(5) s(-)(1) by the analytical method. The current work is a rare kinetic study of the A + B --> C --> D (+ E) consecutive reactions. Kinetic studies of the formation of a metallaheterocyclic moiety have, to our knowledge, not been reported. In addition, gamma-H abstraction by a silyl ligand to give such a metallaheterocyclic moiety is new. Theoretical investigations of the gamma-H abstraction by silyl ligands have been conducted by density functional theory calculations at the Becke3LYP (B3LYP) level, and they revealed that the formation of the metallacyclic complexes through gamma-H abstraction is entropically driven. X-ray crystal structures of (Me(2)N)(3)Ta[N(SiMe(3))(2)](SiPh(2)Bu(t)) (1), (Me(2)N)Zr[N(SiMe(3))(2)](2)Cl (5a), and (M = Zr, 4a, and Hf, 4b) are also reported.