Zerr A, Miehe G. Synthesis of tin(IV) nitride with spinel structure,
γ-Sn
3N
4, from the elements and its Raman-spectroscopic examination at high pressures.
PHILOSOPHICAL TRANSACTIONS. SERIES A, MATHEMATICAL, PHYSICAL, AND ENGINEERING SCIENCES 2023;
381:20220330. [PMID:
37634541 DOI:
10.1098/rsta.2022.0330]
[Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/31/2022] [Accepted: 04/30/2023] [Indexed: 08/29/2023]
Abstract
We report on the synthesis of tin(IV) nitride with spinel structure, γ-Sn3N4, from the elements at high pressures and temperatures using a laser-heated diamond anvil cell, and on the Rietveld refinement of the product structure. The procedure described here is, in our opinion, the most reliable method of obtaining high-purity nitrides which are thermodynamically stable only at high pressures. Raman spectroscopy and powder X-ray diffraction were used to characterize the synthesis products. Pressure dependences of the Raman-band frequencies of γ-Sn3N4 were measured and used to determine its average mode Grüneisen parameter, 〈γ〉 = 0.95. Using this value, we estimated the thermal-shock resistance of γ-Sn3N4 to be about half that of γ-Si3N4, which, in turn, is moderately surpassed by β-Si3N4, known to be highly thermal-shock resistant. This article is part of the theme issue 'Exploring the length scales, timescales and chemistry of challenging materials (Part 1)'.
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