Direct evidence for a half-metallic ferromagnet

Switchable half-metallicity in anti-ferromagnetic bilayer NbS2

Electrical control over spin in spintronics has many advantages over magnetic control such as improved efficiency, reduced energy consumption, enhanced compatibility and faster response. However, direct electrical control also has its disadvantage due to its volatility feature, and thus indirect electrical control with the aid of ferroelectric materials is much more attractive. In this work, we propose another indirect electrical control strategy based on sliding ferroelectricity to achieve half-metallicity in antiferromagnetic bilayer NbS2. Based on density functional theory calculations, it is found that switchable sliding interlayer ferroelectricity can be produced. The built-in electrical field from the resultant out-of-plane polarization can induce a potential energy difference between the two layers, which leads to spin splitting in the band structure. Although the sliding ferroelectricity is generally weak as compared to those intrinsic ferroelectric 2D materials, the spin splitting is strong enough to close the band gap of one of the spin channels and lead to half-metallicity in the antiferromagnetic bilayer NbS2. Our study provides an alternative method to realize sliding induced switchable half-metallicity in 2D antiferromagnetic bilayer systems and thus to extend their practical applications.

Electrical Control of Spin Polarization in a Multiferroic Heterojunction Based on One-Dimensional Chiral Hybrid Metal Halide

Hybrid metal halide materials have been demonstrated to show potential in spintronic applications. In the field of spintronics, controlling the spin degree of freedom by electrical means represents a significant advancement. In this work, we present a spintronic device with a ferromagnet/ferroelectric/ferromagnet heterostructure, in which a one-dimensional (1D) chiral hybrid metal halide serves as an interlayer. The ferroelectricity of the material has been confirmed through both experimental and theoretical approaches. Unlike conventional magnetic tunnel junctions, this multiferroic device exhibits four distinct resistance states, which can be tuned by magnetic and electric fields. Notably, the sign of magnetoresistance can be modulated by an applied bias voltage, demonstrating that the spin polarization of carriers injected from ferromagnetic electrodes can be controlled by an external electric field. Our study not only provides a feasible pathway for electrically controlled spin but also highlights the potential of chiral hybrid metal halides in spintronic applications.

Half-Metallic Antiferromagnetic 2D Nonlayered Cr2Se3 Nanosheets

Half-metallic magnetism, characterized by metallic behavior in one spin direction and semiconducting or insulating behavior in the opposite spin direction, is an intriguing and highly useful physical property for advanced spintronics because it allows for the complete realization of 100% spin-polarized current. Particularly, half-metallic antiferromagnetism is recognized as an excellent candidate for the development of highly efficient spintronic devices due to its zero net magnetic moment combined with 100% spin polarization, which results in lower energy losses and eliminates stray magnetic fields compared to half-metallic ferromagnets. However, the synthesis and characterization of half-metallic antiferromagnets have not been reported until now as the theoretically proposed materials require a delicate and challenging approach to fabricate such complex compounds. Here, we propose Cr2Se3 as the experimentally synthesizable half-metallic antiferromagnet. Our experimental and theoretical studies─including magnetic property measurements, spin-resolved density functional theory calculations, and tunneling magnetoresistance experiments─confirm its half-metallic antiferromagnetic behavior. We demonstrate that the 2D nonlayered Cr2Se3 synthesized via chemical vapor deposition offers an ideal platform for innovative spintronics applications and fundamental research into half-metallic antiferromagnets.

Switchable long-distance propagation of chiral magnonic edge states

The coherent spin waves, magnons, can propagate without accompanying charge transports and Joule heat dissipation. Room-temperature and long-distance spin waves propagating within nanoscale spin channels are considered promising for integrated magnonic applications, but experimentally challenging. Here we report that long-distance propagation of chiral magnonic edge states can be achieved at room temperature in manganite thin films with long, antiferromagnetically coupled spin spirals (millimetre length) and low magnetic Gilbert damping (~3.04 × 10-4). By directly observing the non-reciprocal spin-wave propagation and analysing the strong magnon-magnon coupling in the spiral textures, we elucidate the crucial role of the dynamic dipolar interaction on the birth and hybridization of this chiral magnonic edge state. The observed hybridized magnons with robust chirality can be reversibly and selectively switched on/off by different threshold angles under an external field, indicating great potential for the design of versatile magnonic devices at the nanoscale.

Confined Magnetization at the Sublattice-Matched Ruthenium Oxide Heterointerface

Creating a heterostructure by combining two magnetically and structurally distinct ruthenium oxides is a crucial approach for investigating their emergent magnetic states and interactions. Previously, research has predominantly concentrated on the intrinsic properties of the ferromagnet SrRuO3 and recently discovered altermagnet RuO2 solely. Here, the study engineers an ultrasharp sublattice-matched heterointerface using pseudo-cubic SrRuO3 and rutile RuO2, conducting an in-depth analysis of their spin interactions. Structurally, to accommodate the lattice symmetry mismatch, the inverted RuO2 layer undergoes an in-plane rotation of 18 degrees during epitaxial growth on SrRuO3 layer, resulting in an interesting and rotational interface with perfect crystallinity and negligible chemical intermixing. Performance-wise, the interfacial layer of 6 nm in RuO2 adjacent to SrRuO3 exhibits a nonzero magnetic moment, contributing to an enhanced anomalous Hall effect (AHE) at low temperatures. Furthermore, the observations indicate that in contrast to SrRuO3 single layers, the AHE of [(RuO2)15/(SrRuO3)n] heterostructures show nonlinear behavior and reaches its maximum when the SrRuO3 thickness reaches tens of nm. These results suggest that the interfacial magnetic interaction surpasses that of all-perovskite oxides (≈5-unit cells). This study underscores the significance and potential applications of magnetic interactions based on the crystallographic asymmetric interfaces in the design of spintronic devices.

Investigations on full-Heusler alloys Mn2TaAl and Mn2WAl for spintronic and thermoelectric applications

Half-metallic materials are widely used as spintronic devices such as electrodes, magnetic tunneling junction, and giant magnetoresistance. In this work, we have systematically investigated the structural stability, Gilbert damping, electronic structure, and magnetism together with exchange interactions and Curie temperatures for Mn2TaAl and Mn2WAl alloys. Initially, we estimate their structural stability and offer possible phase synthesis. Subsequently, the Gilbert damping parameters calculated by the linear response theory are used to assess their response speed as spintronic materials. Furthermore, the Mn2TaAl and Mn2WAl are predicted to be half-metallic and nearly half-metallic ferrimagnets and their total magnetic moments obey the Mt = Zt-18 rule. Accordingly, their Curie temperatures for Mn2TaAl and Mn2WAl are also evaluated by the mean-field approximation. Finally, their thermodynamic parameters within 0∼600 K and thermoelectric properties within 200∼900 K are discussed. Overall, our research for Mn2TaAl and Mn2WAl alloys might provide some valuable clues for their application in spintronic devices.

A 2D low-buckled hexagonal honeycomb Weyl-point spin-gapless semiconductor family with the quantum anomalous Hall effect

Spin-gapless semiconductors (SGSs), serving as superior alternatives to half-metals, open up new avenues in spintronics. Specifically, Weyl-point SGSs (WPSGSs) with ideal Weyl points at the Fermi energy level represent an optimal amalgamation of spintronics and topological physics. Moreover, considering spin-orbital coupling (SOC), most two-dimensional (2D) WPSGSs undergo transformation into half Chern insulators (HCIs) with the emergence of the quantum anomalous Hall effect (QAHE). The 2D I-II-V half-Heusler compounds, constituting a broad family of narrow-bandgap semiconductors with low-buckled hexagonal honeycomb crystal structures akin to silicene, aptly function as SGSs and serve as nontrivial topological parent materials. Through first-principles calculations, we propose that the Li12X10Cr2Y12 (X = Mg, Zn, Cd; Y = P, As) monolayers, derived by substituting certain X atoms in the LiXY (X = Mg, Zn, Cd; Y = P, As) monolayers of I-II-V half-Heusler compounds with Cr atoms, emerge as potential candidates for ideal 2D WPSGSs. These monolayers exhibit stable thermodynamic properties and 100% spin polarization. With SOC taken into account, the Li12X10Cr2Y12 monolayers transition into HCIs with a Chern number of +1, giving rise to the QAHE. These intriguing findings lay the groundwork for a promising material platform for the development of low-power spintronic and topological microelectronic devices.

A complex magnetic study: evidence of spin-glass transition below long-range magnetic ordering and its correlation with renormalization of phonon modes

In this paper, we report a complex magnetic behavior arising due to the interplay of three active magnetic cations (Nd/Sm, Co and Ir), forming 3d-5d-4f magnetic sublattices. The B-site ordered double perovskites Nd2CoIrO6and Sm2CoIrO6were successfully prepared by conventional solid-state method. Detailed structural analysis revealed that both samples crystallized in monoclinic structure with P21/n (No.-14) space group. X-ray photoelectron spectroscopy analysis confirms the presence of multiple oxidation states of Ir (i.e. Ir4+and Ir5+). Both samples show a paramagnetic-ferrimagnetic (TFiM) transition around 100 K, additionally, a low temperature transition is observed at around 10 K in the SCIO sample. This FM-like behavior of the samples is attributed to the antiparallel alignment of the Co2+and Ir4+spins, resulting in FiM ordering. The ac susceptibility analysis confirms a spin glass type transition just below the long-range ordering temperature in NCIO sample, The obtained characteristic flipping time of a single spin from both the law (Power law and Vogel-Fulcher law) and nonzero Vogel-Fulcher temperature (T0≃ 89.1 K) further verified the existence of cluster spin-glass behavior below the ordering temperature. The temperature evolution of phonon modes (up to 4 K) suggests that the phonon mode above the magnetic ordering temperature is mainly governed by the lattice degrees of freedom; notable renormalization of the mode frequency below the ordering temperature is due to the coupling of lattice with the underlying magnetic degrees of freedom.

A Density Functional Theory Study of the Physico-Chemical Properties of Alkali Metal Titanate Perovskites for Solar Cell Applications

The urgent need to shift from non-renewable to renewable energy sources has caused widespread interest in photovoltaic technologies that allow us to harness readily available and sustainable solar energy. In the past decade, polymer solar cells (PSCs) and perovskite solar cells (Per-SCs) have gained attention owing to their low price and easy fabrication process. Charge transport layers (CTLs), transparent conductive electrodes (TCEs), and metallic top electrodes are important constituents of PSCs and Per-SCs, which affect the efficiency and stability of these cells. Owing to the disadvantages of current materials, including instability and high cost, the development of alternative materials has attracted significant attention. Owing to their more flexible physical and chemical characteristics, ternary oxides are considered to be appealing alternatives, where ATiO3 materials-a class of ternary perovskite oxides-have demonstrated considerable potential for applications in solar cells. Here, we have employed calculations based on the density functional theory to study the structural, optoelectronic, and magnetic properties of ATiO3 (A=Li, Na, K, Rb, and Cs) in different crystallographic phases to determine their potential as PSCs and Per-SCs materials. We have also determined thermal and elastic properties to evaluate their mechanical and thermal stability. Our calculations have revealed that KTiO3 and RbTiO3 possess similar electronic properties as half-metallic materials, while LiTiO3 and CsTiO3 are metallic. Semiconductor behavior with a direct band gap of 2.77 eV was observed for NaTiO3, and calculations of the optical and electronic properties predicted that NaTiO3 is the most appropriate candidate to be employed as a charge transfer layer (CTL) and bottom transparent conducting electrode (TCE) in PSCs and Per-SCs, owing to its transparency and large bandgap, whereas NaTiO3 also provided superior elastic and thermal properties. Among the metallic and half-metallic ATiO3 compounds, CsTiO3 and KTiO3 exhibited the most appropriate features for the top electrode and additional absorbent in the active layer, respectively, to enhance the performance and stability of these cells.

Electronic and Structural Disorder of the Epitaxial La0.67Sr0.33MnO3 Surface

Understanding and tuning epitaxial complex oxide films are crucial in controlling the behavior of devices and catalytic processes. Substrate-induced strain, doping, and layer growth are known to influence the electronic and magnetic properties of the bulk of the film. In this study, we demonstrate a clear distinction between the bulk and surface of thin films of La0.67Sr0.33MnO3 in terms of chemical composition, electronic disorder, and surface morphology. We use a combined experimental approach of X-ray-based characterization methods and scanning probe microscopy. Using X-ray diffraction and resonant X-ray reflectivity, we uncover surface nonstoichiometry in the strontium and lanthanum alongside an accumulation of oxygen vacancies. With scanning tunneling microscopy, we observed an electronic phase separation (EPS) on the surface related to this nonstoichiometry. The EPS is likely driving the temperature-dependent resistivity transition and is a cause of proposed mixed-phase ferromagnetic and paramagnetic states near room temperature in these thin films.

Antiferromagnetic Semiconductor BaMnO3 Hexagonal Perovskite with a Direct Bandgap

The unique properties of direct bandgap semiconductors make it important to search for semiconductors exhibiting this phenomenon in perovskite materials. In this study, we employed first-principles calculations to investigate the crystal structures, magnetic configurations, and electronic properties of hexagonal perovskite BaMnO3 in its 4H and 6H phases. The results indicate that both structures exhibit antiferromagnetic characteristics, in which the Mn-O-Mn superexchange plays the dominant role in the 4H phase, although there is a competition between the Mn-Mn direct exchange interaction and the Mn-O-Mn superexchange interaction. In contrast, these two interactions exhibit harmonious coexistence in the 6H phase, and the two antiferromagnetic transitions occurring in the experimental phase should be related to the synergistic effect between them. Despite their different internal arrangements, they exhibit the same charge combination of Ba2+Mn4+O2-3. More importantly, both phases exhibit semiconductor properties with a direct bandgap, making it suitable to serve as an alternative material for photovoltaic and optoelectronic devices. In particular, the band gap of the 4H phase is just the right size to absorb visible light, and the 6H phase should be a potential candidate to absorb light in the ultraviolet region.

Effect of a flat band on a multiband two-dimensional Lieb lattice with intra- and interband interactions

In this study, we explore the effect of a single flat band in the electronic properties of a ferromagnetic two-dimensional Lieb lattice using the multiband Hubbard model with polarized carriers, spin-up and spin-down. We employ the self-consistent dynamical mean field theory and a Green functions cumulant expansion around the atomic limit to obtain the correlated densities of states while varying the intra- and interband interactions. Our findings demonstrate a renormalization of the correlated density of states in both the spin-up and spin-down carriers as we varied the intra- and interband interactions. We conclude that the presence of a flat band enables the system to maintain a metal state with itinerant ferromagnetism in the spin-up carrier.

Two-dimensional ferroelastic and ferromagnetic NiOX (X = Cl and Br) with half-metallicity and a high Curie temperature

Two-dimensional (2D) multiferroic materials with distinctive properties, such as half-metallicity, high Curie temperature (TC), and magnetoelastic coupling, hold potential applications in novel nanoscale spintronic devices, but they are rare. Using density functional theory (DFT) calculations and evolutionary algorithms, we identify new types of 2D NiOX (X = F, Cl and Br) monolayers that are stable in energy, dynamics, thermodynamics, and mechanics. Among them, NiOF is an indirect-gap antiferromagnetic (AFM) semiconductor, while NiOCl and NiOBr are half-metallic materials with ferromagnetic (FM) ordering with a TC of 671 and 692 K and in-plane magnetic anisotropy energies (MAEs) of 541 and 609 μeV per Ni along the x-axis and y-axis, respectively. Notably, ferroelasticity is another important feature of NiOCl and NiOBr monolayers with energy barriers of 234.0 and 151.5 meV per atom, respectively. Moreover, the in-plane magnetic easy axis is strongly coupled to the lattice direction. The coexistence of high ferromagnetism, ferroelasticity, half-metallicity, and magnetoelastic coupling renders NiOCl and NiOBr monolayers great potential for future nanodevices.

A Janus CrSSe monolayer with interesting ferromagnetism

The search for intrinsic half-metallic ferromagnetic (FM) monolayers with a high Curie temperature (TC), considerable magnetic anisotropy energy (MAE), and multiferroic coupling is key for the development of ultra-compact spintronics. Here, we have identified a new stable FM Janus monolayer, the tetrahedral CrSSe, through first-principles structural search calculations, which not only exhibits very interesting magnetoelectric properties with a high TC of 790 K, a large MAE of 0.622 meV per Cr, and robust half-metallicity, but also shows obvious ferroelasticity with a modest energy barrier of 0.31 eV per atom. Additionally, there appears to be interesting multiferroic coupling between in-plane magnetization and ferroelasticity. Furthermore, by replacing the Se/S atoms in the CrSSe monolayer with S/Se atoms, we obtained two new half-metallic FM CrS2 and CrSe2 monolayers, which also exhibit excellent magnetoelectric properties. Therefore, our findings provide a pathway to design novel multiferroic materials and enrich the understanding of 2D transition metal chalcogenides.

Magnetism and Thermal Transport of Exchange-Spring-Coupled La2/3Sr1/3MnO3/La2MnCoO6 Superlattices with Perpendicular Magnetic Anisotropy

Superlattices (SLs) comprising layers of a soft ferromagnetic metal La2/3Sr1/3MnO3 (LSMO) with in-plane (IP) magnetic easy axis and a hard ferromagnetic insulator La2MnCoO6 (LMCO, out-of-plane anisotropy) were grown on SrTiO3 (100)(STO) substrates by a metalorganic aerosol deposition technique. Exchange spring magnetic (ESM) behavior between LSMO and LMCO, manifested by a spin reorientation transition of the LSMO layers towards perpendicular magnetic anisotropy below TSR = 260 K, was observed. Further, 3ω measurements of the [(LMCO)9/(LSMO)9]11/STO(100) superlattices revealed extremely low values of the cross-plane thermal conductivity κ(300 K) = 0.32 Wm-1K-1. Additionally, the thermal conductivity shows a peculiar dependence on the applied IP magnetic field, either decreasing or increasing in accordance with the magnetic disorder induced by ESM. Furthermore, both positive and negative magnetoresistance were observed in the SL in the respective temperature regions due to the formation of 90°-Néel domain walls within the ESM, when applying IP magnetic fields. The results are discussed in the framework of electronic contribution to thermal conductivity originating from the LSMO layers.

Development of deflector mode for spin-resolved time-of-flight photoemission spectroscopy

Spin- and angle-resolved photoemission spectroscopy ("spin-ARPES") is a powerful technique for probing the spin degree-of-freedom in materials with nontrivial topology, magnetism, and strong correlations. Spin-ARPES faces severe experimental challenges compared to conventional ARPES attributed to the dramatically lower efficiency of its detection mechanism, making it crucial for instrumentation developments that improve the overall performance of the technique. In this paper, we demonstrate the functionality of our spin-ARPES setup based on time-of-flight spectroscopy and introduce our recent development of an electrostatic deflector mode to map out spin-resolved band structures without sample rotation. We demonstrate the functionality by presenting the spin-resolved spectra of the topological insulator Bi2Te3 and describe in detail the spectrum calibrations based on numerical simulations. By implementing the deflector mode, we minimize the need for sample rotation during measurements, hence improving the overall efficiency of experiments on small or inhomogeneous samples.

Large Magnetoresistance of Isolated Domain Walls in La2/3 Sr1/3 MnO3 Nanowires

Generation, manipulation, and sensing of magnetic domain walls are cornerstones in the design of efficient spintronic devices. Half-metals are amenable for this purpose as large low field magnetoresistance signals can be expected from spin accumulation at spin textures. Among half metals, La1- x Srx MnO3 (LSMO) manganites are considered as promising candidates for their robust half-metallic ground state, Curie temperature above room temperature (Tc = 360 K, for x = 1/3), and chemical stability. Yet domain wall magnetoresistance is poorly understood, with large discrepancies in the reported values and conflicting interpretation of experimental data due to the entanglement of various source of magnetoresistance, namely, spin accumulation, anisotropic magnetoresistance, and colossal magnetoresistance. In this work, the domain wall magnetoresistance is measured in LSMO cross-shape nanowires with single-domain walls nucleated across the current path. Magnetoresistance values above 10% are found to be originating at the spin accumulation caused by the mistracking effect of the spin texture of the domain wall by the conduction electrons. Fundamentally, this result shows the importance on non-adiabatic processes at spin textures despite the strong Hund coupling to the localized t2g electrons of the manganite. These large magnetoresistance values are high enough for encoding and reading magnetic bits in future oxide spintronic sensors.

Slater-Pauling Behavior in Half-Metallic Heusler Compounds

Heusler materials have become very popular over the last two decades due to the half-metallic properties of a large number of Heusler compounds. The latter are magnets that present a metallic behavior for the spin-up and a semiconducting behavior for the spin-down electronic band structure leading to a variety of spintronic applications, and Slater-Pauling rules have played a major role in the development of this research field. These rules have been derived using ab initio electronic structure calculations and directly connecting the electronic properties (existence of spin-down energy gap) to the magnetic properties (total spin magnetic moment). Their exact formulation depends on the half-metallic family under study and can be derived if the hybridization of the orbitals at various sites is taken into account. In this review, the origin and formulation of the Slater-Pauling rules for various families of Heusler compounds, derived during these two last decades, is presented.

Probing the structural, mechanical, phonon, thermal, and transport properties of magnetic halide perovskites XTiBr3 (X = Rb, Cs) through ab-initio results

Herein, we have first reported the intrinsic properties, including structural, mechanical, electronic, magnetic, thermal, and transport properties of XTiBr₃ (X = Rb, Cs) halide perovskites within the simulation scheme of density functional theory as integrated into Wien2k. First and foremost, the structural stability in terms of their ground state energies has been keenly evaluated from their corresponding structural optimizations, which advocate that XTiBr₃ (X = Rb, Cs) has a stable ferromagnetic rather than the competing non-magnetic phase. Later on, the electronic properties have been computed within the mix of two applied potential schemes like Generalized Gradient Approximation (GGA) along with Trans-Bhala modified Becke Johnson (TB-mBJ), which thoroughly addresses the half-metallic behaviour with spin-up as metallic and in contrast to opposite spin-down channel signatures the semiconducting behaviour. Furthermore, the spin-splitting seen from their corresponding spin-polarised band structures offers a net magnetism of 2 µB which lends their opportunities to unlock the application branch of spintronics. In addition, these alloys have been characterised to show their mechanical stability describing the ductile feature. Moreover, phonon dispersions decisively certify the dynamical stability within the density functional perturbation theory (DFPT) context. Finally, the transport and thermal properties predicted within their specified packages have also been forwarded in this report.

Remarkable Electrical Conductivity Increase and Pure Metallic Properties from Semiconducting Colloidal Nanocrystals by Cation Exchange for Solution-Processable Optoelectronic Applications

The authors report a strategic approach to achieve metallic properties from semiconducting CuFeS colloidal nanocrystal (NC) solids through cation exchange method. An unprecedentedly high electrical conductivity is realized by the efficient generation of charge carriers onto a semiconducting CuS NC template via minimal Fe exchange. An electrical conductivity exceeding 10 500 S cm^-1 (13 400 S cm^-1 at 2 K) and a sheet resistance of 17 Ω/sq at room temperature, which are among the highest values for solution-processable semiconducting NCs, are achieved successfully from bornite-phase CuFeS NC films possessing 10% Fe atom. The temperature dependence of the corresponding films exhibits pure metallic characteristics. Highly conducting NCs are demonstrated for a thermoelectric layer exhibiting a high power factor over 1.2 mW m^-1 K^-2 at room temperature, electrical wires for switching on light emitting diods (LEDs), and source-drain electrodes for p- and n-type organic field-effect transistors. Ambient stability, eco-friendly composition, and solution-processability further validate their sustainable and practical applicability. The present study provides a simple but very effective method for significantly increasing charge carrier concentrations in semiconducting colloidal NCs to achieve metallic properties, which is applicable to various optoelectronic devices.

Electric and Magnetic Tuning of Gilbert Damping Constant in LSMO/PMN-PT(011) Heterostructure

Electric field control of magnetodynamics in magnetoelectric (ME) heterostructures has
been the subject of recent interest due to its fundamental complexity and promising applications in
room temperature devices. The present work focuses on the tuning of magnetodynamic parameters
of epitaxially grown ferromagnetic (FM) La_0.7Sr_0.3MnO₃(LSMO) on a ferro(piezo)electric (FE)
Pb(Mg_0.33Nb_0.67)O₃-PbTiO₃(PMN-PT) single crystal substrate. The uniaxial magnetic anisotropy
of LSMO on PMN-PT confirms the ME coupling at the FM/FE heterointerface. The magnitude of
the Gilbert damping constant (α) of this uniaxial LSMO film measured along the hard magnetic axis
is significantly small compared to the easy axis. Furthermore, a marked decrease in the α values of
LSMO at positive and negative electrical remanence of PMN-PT is observed, which is interpreted
in the framework of strain induced spin dependent electronic structure. The present results clearly
encourage the prospects of electric field controlled magnetodynamics, thereby realising the room
temperature spin-wave based device applications with ultra-low power consumption.

Hierarchically Engineered Manganite Thin Films with a Wide-Temperature-Range Colossal Magnetoresistance Response

Colossal magnetoresistance is of great fundamental and technological significance in condensed-matter physics, magnetic memory, and sensing technologies. However, its relatively narrow working temperature window is still a severe obstacle for potential applications due to the nature of the material-inherent phase transition. Here, we realized hierarchical La_0.7Sr_0.3MnO₃ thin films with well-defined (001) and (221) crystallographic orientations by combining substrate modification with conventional thin-film deposition. Microscopic investigations into its magnetic transition through electron holography reveal that the hierarchical microstructure significantly broadens the temperature range of the ferromagnetic-paramagnetic transition, which further widens the response temperature range of the macroscopic colossal magnetoresistance under the scheme of the double-exchange mechanism. Therefore, this work puts forward a method to alter the magnetic transition and thus to extend the magnetoresistance working window by nanoengineering, which might be a promising approach also for other phase-transition-related effects in functional oxides.

Tunable Magnetic Properties in Sr2FeReO6 Double-Perovskite

Double-perovskite oxides have attracted recent attention due to their attractive functionalities and application potential. In this paper, we demonstrate the effect of dual controls, i.e., the deposition pressure of oxygen (P_O2) and lattice mismatch (ε), on tuning magnetic properties in epitaxial double-perovskite Sr₂FeReO₆ films. In a nearly lattice matched Sr₂FeReO₆/SrTiO₃ film, the ferrimagnetic-to-paramagnetic phase transition occurs when P_O2 is reduced to 30 mTorr, probably due to the formation of Re⁴⁺ ions that replace the stoichiometric Re⁵⁺ to cause disorders of B-site ions. On the other hand, a large compressive strain or tensile strain shifts this critical P_O2 to below 1 mTorr or above 40 mTorr, respectively. The observations can be attributed to the modulation of B-site ordering by epitaxial strain through affecting elemental valence. Our results provide a feasible way to expand the functional tunability of magnetic double-perovskite oxides that hold great promise for spintronic devices.

Electrical and Magnetic Transport Properties of Co2VGa Half-Metallic Heusler Alloy

This study performed a systematic experimental investigation into the structural, magnetic, and transport properties of the Co₂VGa Heusler alloy, which was theoretically predicted to exhibit half-metallic ferromagnetism. It has been experimentally found that the studied alloy has a relatively high-ordered L2₁ cubic structure at room temperature and orders ferromagnetically below ~350 K. Interestingly, by fitting the electric transport data with the properly governing equations in two different temperature regions, the two-magnon scattering process (the T9/2 dependence) appears in the temperature range from 30 to 75 K. Moreover, the magnetoresistance effect changes from a negative value to a positive value when the temperature is below 100 K. Such experimental findings provide indirect evidence that the half-metallic nature of this alloy is retained only when the temperature is below 100 K. On the other hand, the magnetic transport measurements indicate that the anomalous Hall coefficient of this alloy increases when the temperature increases and reaches a relatively high value (~8.3 μΩ·cm/T) at 300 K due to its lower saturated magnetization. By analyzing the anomalous Hall resistivity scale with the longitudinal resistivity, it was also found that the anomalous Hall effect can be ascribed to the combined effect of extrinsic skew scattering and intrinsic Berry curvature, but the latter contribution plays a dominant role.

Realization of a Half Metal with a Record-High Curie Temperature in Perovskite Oxides

Half metals, in which one spin channel is conducting while the other is insulating with an energy gap, are theoretically considered to comprise 100% spin-polarized conducting electrons, and thus have promising applications in high-efficiency magnetic sensors, computer memory, magnetic recording, and so on. However, for practical applications, a high Curie temperature combined with a wide spin energy gap and large magnetization is required. Realizing such a high-performance combination is a key challenge. Herein, a novel A- and B-site ordered quadruple perovskite oxide LaCu₃ Fe₂ Re₂ O₁₂ with the charge format of Cu²⁺ /Fe³⁺ /Re^4.5+ is reported. The strong Cu²⁺ (↑)Fe³⁺ (↑)Re^4.5+ (↓) spin interactions lead to a ferrimagnetic Curie temperature as high as 710 K, which is the reported record in perovskite-type half metals thus far. The saturated magnetic moment determined at 300 K is 7.0 μ_B f.u.^-1 and further increases to 8.0 μ_B f.u.^-1 at 2 K. First-principles calculations reveal a half-metallic nature with a spin-down conducting band while a spin-up insulating band with a large energy gap up to 2.27 eV. The currently unprecedented realization of record Curie temperature coupling with the wide energy gap and large moment in LaCu₃ Fe₂ Re₂ O₁₂ opens a way for potential applications in advanced spintronic devices at/above room temperature.

Structural Characterization and Physical Properties of Double Perovskite La2FeReO6+δ Powders

The structural, optical, dielectric, and magnetic properties of double perovskite La₂FeReO_6+δ (LFRO) powders synthesized by solid-state reaction method under CO reduced atmosphere are reported on in this paper. Reitveld refinements on the XRD data revealed that the LFRO powders crystallized in an orthogonal structure (Pbnm space group) with column-like morphology. The molar ratios of La, Fe, and Re elements were close to 2:1:1. XPS spectra verified the mixed chemical states of Fe and Re ions, and two oxygen species in the LFRO powders. The LFRO ceramics exhibited a relaxor-like dielectric behavior, and the associated activation energy was 0.05 eV. Possible origins of the dielectric relaxation behavior are discussed based on the hopping of electrons among the hetero-valence ions at B-site, oxygen ion hopping through the vacant oxygen sites, and the jumping of electrons trapped in the shallower level created by oxygen vacancy. The LFRO powders display room temperature ferromagnetism with Curie temperature of 746 K. A Griffiths-like phase was observed in the LFRO powders with a Griffiths temperature of 758 K. The direct optical band gap of the LFRO powders was 2.30 eV, deduced from their absorption spectra, as confirmed by their green photoluminescence spectra with a strong peak around 556 nm.

Dislocation Defect Layer-Induced Magnetic Bi-states Phenomenon in Epitaxial La0.7Sr0.3MnO3(111) Thin Films

La_0.7Sr_0.3MnO₃ (LSMO) is one of the most fascinating strongly correlated oxides in which the spin polarization and magnetic property are sensitive to strain, especially in the (111)-oriented LSMO. In the paper, epitaxial LSMO(111) thin films with different thicknesses were prepared, and they showed continuous dislocation defect arrays with thickness greater than 45 nm. Then, the thick LSMO(111) films were divided into a double-layer structure with two slightly different oriented cells. The LSMO(111) films present a stronger lattice-spin coupling, thus the double-layer structure triggers an obvious magnetic heterogeneity phenomenon (magnetic bi-states) by the way of creating a double-mode ferromagnetic resonance (FMR) spectrum. Therefore, the nanostructures, especially the ordered structure defects, may trigger enriched physical phenomena and offer new forms of spin coupling and device functionality in strain-sensitive strongly correlated oxide systems.

Influence of Thickness on the Magnetic and Magnetotransport Properties of Epitaxial La0.7Sr0.3MnO3 Films Deposited on STO (0 0 1)

Epitaxial La0.7Sr0.3MnO3 films with different thicknesses (9-90 nm) were deposited on SrTiO3 (0 0 1) substrates by pulsed laser deposition. The films have been investigated with respect to morpho-structural, magnetic, and magneto-transport properties, which have been proven to be thickness dependent. Magnetic contributions with different switching mechanisms were evidenced, depending on the perovskite film thickness. The Curie temperature increases with the film thickness. In addition, colossal magnetoresistance effects of up to 29% above room temperature were evidenced and discussed in respect to the magnetic behavior and film thickness.

Infinite-layer/perovskite oxide heterostructure-induced high-spin states in SrCuO2/SrRuO3 bilayer films

Heterostructures composed of dissimilar oxides with different properties offer opportunities to develop emergent devices with desired functionalities. A key feature of oxide heterostructures is interface electronics and orbital reconstructions. Here, we combined infinite-layered SrCuO₂ and perovskite SrRuO₃ into heterostructures. A rare high spin state as large as 3.0 μ_B f.u^-1 and an increase in Curie temperature by 12 K are achieved in an ultrathin SrRuO₃ film capped by a SrCuO₂ layer. Atomic-scale lattice imaging shows the uniform CuO₂-plane-to-RuO₅-pyramid connection at the interface, where the regularly arranged RuO₅ pyramids were elongated along the out-of-plane direction. As revealed by theoretical calculations and spectral analysis, these features finally result in an abnormally high spin state of the interfacial Ru ions with highly polarized e_g orbitals. The present work demonstrates that oxygen coordination engineering at the infinite-layer/perovskite oxide interface is a promising approach towards advanced oxide electronics.

Overlayer deposition-induced control of oxide ion concentration in SrFe0.5Co0.5O2.5 oxygen sponges

Controlling the oxide ion (O2-) concentration in oxides is essential to develop advanced ionic devices, i.e. solid oxide fuel cells, smart windows, memory devices, energy storage devices, and so on. Among many oxides several transition metal (TM)-based perovskite oxides show high oxide ion conductivity, and their physical properties show high sensitivity to the change of the oxide ion concentration. Here, the change in the oxide ion concentration is shown through the overlayer deposition on the SrFe0.5Co0.5O2.5 (SFCO) oxygen sponge film. We grew SFCO films followed by the deposition of two kinds of complex oxide films under exactly the same growth conditions, and observed the changes in the crystal structure, valence states, and magnetic ground states. As the NSMO overlayer grows, strong evidence of oxidation at the O K edge is shown. In addition, the Fe4+ feature is revealed, and the electron valence state of Co increased from 3 to 3.25. The oxide ion concentration of SFCO changes during layer growth due to oxidation or reduction due to differences in chemical potential. The present results might be useful to develop advanced ionic devices using TM-based perovskite oxides.

Designing new ferromagnetic double perovskites: the coexistence of polar distortion and half-metallicity

Advancing technology and growing interdisciplinary fields raise the need for new materials that simultaneously possess several significant physics quantities to meet human demands. In this research, using density functional theory, we aim to design A₂MnVO₆ (A = Ca, Ba) as new double perovskites and investigate their structural, electronic, and magnetic properties. Structural calculations based on the total energies show the optimized monoclinic and orthorhombic crystal structures for the Ca₂MnVO₆ (CMVO) and Ba₂MVO₆ (BMVO) compounds, respectively. Through performing calculations, we reveal that the Jahn-Teller effect plays an important role in polar distortions of VO₆ and elongation of MnO₆ octahedra, resulting from the V⁵⁺(3d⁰) and Mn³⁺(3d⁴:t32ge1g) electron configurations. The spin-polarized calculations predict the half-metallic ferromagnetic ground state for CMVO and BMVO with a total magnetic moment of 4.00 μ_B f.u.^-1 Our findings introduce CMVO and BMVO double perovskites as promising candidates for designing ferromagnetic polar half-metals and spintronic applications.

Resistance-Chiral Anisotropy of Chiral Mesostructured Half-metallic Fe3 O4 Films

Half-metallic materials are theoretically predicted to be metallic and insulating, which have not been confirmed experimentally, and the predictions are still in doubt. We report the resistance-chiral anisotropy (R-ChA), i.e., chirality-dependent electrical conductivity, in chiral mesostructured Fe₃ O₄ films (CMFFs) grown on the substrates via a hydrothermal method using amino acids as symmetry-breaking agents. Two levels of chirality exist in the CMFFs: primary distortion of the crystal lattice forms twisted nanoflakes, and secondary helical stacking of nanoflakes forms fan-shaped nanoplates. At temperatures below 30 K, the CMFFs exhibited metallic conductivity and insulation for one handedness and the other, respectively. The chirality-dependent effective magnetic fields were speculated to stabilize the opposite spin in the antipodal chiral frame, which led to the free transport of electrons in one handedness of the chiral structure and immobility for the other handedness.

Large Low-Field Magnetoresistance (LFMR) Effect in Free-Standing La0.7Sr0.3MnO3 Films

The realization of a large low-field magnetoresistance (LFMR) effect in free-standing magnetic oxide films is a crucial goal toward promoting the development of flexible, low power consumption, and nonvolatile memory devices for information storage. La_0.7Sr_0.3MnO₃ (LSMO) is an ideal material for spintronic devices due to its excellent magnetic and electronic properties. However, it is difficult to achieve both a large LFMR effect and high flexibility in LSMO films due to the lack of research on LFMR-related mechanisms and the strict LSMO growth conditions, which require rigid substrates. Here, we induced a large LFMR effect in an LSMO/mica heterostructure by utilizing a disorder-related spin-polarized tunneling effect and developed a simple transfer method to obtain free-standing LSMO films for the first time. Electrical and magnetic characterizations of these free-standing LSMO films revealed that all of the principal properties of LSMO were sustained under compressive and tensile conditions. Notably, the magnetoresistance of the processed LSMO film reached up to 16% under an ultrasmall magnetic field (0.1 T), which is 80 times that of a traditional LSMO film. As a demonstration, a stable nonvolatile multivalue storage function in flexible LSMO films was successfully achieved. Our work may pave the way for future wearable resistive memory device applications.

Realizing stable half-metallicity in zigzag silicene nanoribbons with edge dihydrogenation and chemical doping

Although many schemes have been proposed to obtain full half-metallicity in zigzag silicene nanoribbons with edge monohydrogenation (H-H ZSiNRs) by chemical modification, the resulted negligible energy difference between the antiferromagnetic (AFM) and ferromagnetic (FM) configurations makes the half-metallicity hardly observable practically. In this work, based on density functional calculations, we find that the ZSiNRs with edge dihydrogenation (H2-H2 ZSiNRs) can be tuned to be half-metallic by replacing the central two zigzag Si chains with two zigzag Al-P chains, and more importantly, the FM-AFM energy difference is significantly increased compared with the H-H cases. The obtained half-metallicity originates from the different potential between two edges of the ribbon after doping, which results in the edge states of two spin channels shifting oppositely in energy. This mechanism is so robust that the half-metallicity can always be achieved, irrespective of the ribbon width. Our finding provides a fantastic way for achieving stable half-metallicity in ZSiNRs.

Spectroscopic characterization of electronic structures of ultra-thin single crystal La0.7Sr0.3MnO3

We have successfully fabricated high quality single crystalline La_0.7Sr_0.3MnO₃ (LSMO) film in the freestanding form that can be transferred onto silicon wafer and copper mesh support. Using soft x-ray absorption (XAS) and resonant inelastic x-ray scattering (RIXS) spectroscopy in transmission and reflection geometries, we demonstrate that the x-ray emission from Mn 3s-2p core-to-core transition (3sPFY) seen in the RIXS maps can represent the bulk-like absorption signal with minimal self-absorption effect around the Mn L₃-edge. Similar measurements were also performed on a reference LSMO film grown on the SrTiO₃ substrate and the agreement between measurements substantiates the claim that the bulk electronic structures can be preserved even after the freestanding treatment process. The 3sPFY spectrum obtained from analyzing the RIXS maps offers a powerful way to probe the bulk electronic structures in thin films and heterostructures when recording the XAS spectra in the transmission mode is not available.

Simultaneous observation of anti-damping and the inverse spin Hall effect in the La0.67Sr0.33MnO3/Pt bilayer system

Manganites have shown potential in spintronics because they exhibit high spin polarization. Here, by ferromagnetic resonance we have studied the damping properties of La0.67Sr0.33MnO3/Pt bilayers which are prepared by oxide molecular beam epitaxy. The damping coefficient (α) of a La0.67Sr0.33MnO3 (LSMO) single layer is found to be 0.0104. However the LSMO/Pt bilayers exhibit a decrease in α with an increase in Pt thickness. This decrease in the value of α is probably due to high anti-damping like torque. Furthermore, we have investigated the angle dependent inverse spin Hall effect (ISHE) to quantify the spin pumping voltage from other spin rectification effects such as the anomalous Hall effect and anisotropic magnetoresistance. We have observed a high spin pumping voltage (∼20 μV). The results indicate that both anti-damping and spin pumping phenomena occur simultaneously.

Multifunctional Metal-Oxide Nanocomposite Thin Film with Plasmonic Au Nanopillars Embedded in Magnetic La0.67Sr0.33MnO3 Matrix

Searching for multifunctional materials with tunable magnetic and optical properties has been a critical task toward the implementation of future integrated optical devices. Vertically aligned nanocomposite (VAN) thin films provide a unique platform for multifunctional material designs. Here, a new metal-oxide VAN has been designed with plasmonic Au nanopillars embedded in a ferromagnetic La_0.67Sr_0.33MnO₃ (LSMO) matrix. Such Au-LSMO nanocomposite presents intriguing plasmon resonance in the visible range and magnetic anisotropy property, which are functionalized by the Au and LSMO phase, respectively. Furthermore, the vertically aligned nanostructure of metal and dielectric oxide results in the hyperbolic property for near-field electromagnetic wave manipulation. Such optical and magnetic response could be further tailored by tuning the composition of Au and LSMO phases.

Engineering magnetic anisotropy and exchange couplings in double transition metal MXenes via surface defects

Two-dimensional (2D) materials have been experimentally proven to manifest almost all types of material properties observed in bulk materials. However, 2D magnetism was elusive until recently. In this work, we used an approach that synergistically uses density functional theory, and Monte Carlo methods to investigate the magnetic and electronic properties of magnetic double transition metal MXene alloys (Hf₂MnC₂O₂and Hf₂VC₂O₂) by exploiting realistic surface terminations via creating surface defects including oxygen vacancies and H adatoms. We found that introducing surface oxygen vacancies or hydrogen adatoms is able to modify the electronic structures, magnetic anisotropies, and exchange couplings. Depending on the defect concentration, a ferromagnetic half-metallic state can be realized for both Hf₂VC₂O₂and Hf₂MnC₂O₂. Bare Hf₂VC₂O₂exhibits easy-axis anisotropy, whereas bare Hf₂MnC₂O₂exhibits easy-plane anisotropy; however, defects can change the latter to easy-axis anisotropy, which is preferable for spintronics applications. The considered defects were found to modify the magnetic anisotropy by as much as 300%. Defects also produce an inhomogeneous pattern of exchange couplings, which can further enhance the Curie temperature. In particular, Hf₂MnC₂O₂H_0.22was predicted to have a Curie temperature of about 171 K due to a combination of easy-axis anisotropy and a connected network of enhanced exchange couplings. Our calculations suggest a route toward engineering exchange couplings and magnetic anisotropy to improve magnetic properties.

Interfacial reconstruction in La0.7Sr0.3MnO3 thin films: giant low-field magnetoresistance

Herein, interfacial reconstruction in a series of La0.7Sr0.3MnO3 (LSMO) films grown on a (001) oriented LaAlO3 (LAO) substrate using the pulsed plasma sputtering technique is demonstrated. X-ray diffraction studies suggested that the LSMO film on LAO was stabilized in a tetragonal structure, which was relaxed in-plane and strained along the out-of-plane direction. The interfacial reconstruction of the LSMO-LAO interface due to the reorientation of the Mn ion spin induced spin-glass behavior due to the presence of non-collinear Mn ion spins. Consequently, the interface effect was observed on the Curie temperature, temperature-dependent resistivity, metal-to-semiconductor transition temperature, and magnetoresistance (MR). At a magnetic field of 7 T, MR decreased from 99.8% to 7.69% as the LSMO film thickness increased from 200 Å to 500 Å. A unique characteristic of the LSMO films is the large low-field MR after a decrease in the field from the maximum field. The observed temperature-dependent magnetization and low-temperature resistivity upturn of the LSMO films grown on LAO provide direct evidence that the low-field MR is due to the non-collinear interfacial spins of Mn. The present work demonstrates the great potential of interface and large low-field MR, which might advance the fundamental applications of orbital physics and spintronics.

Interfacial tuning of chiral magnetic interactions for large topological Hall effects in LaMnO3/SrIrO3 heterostructures

Chiral interactions in magnetic systems can give rise to rich physics manifested, for example, as nontrivial spin textures. The foremost interaction responsible for chiral magnetism is the Dzyaloshinskii-Moriya interaction (DMI), resulting from inversion symmetry breaking in the presence of strong spin-orbit coupling. However, the atomistic origin of DMIs and their relationship to emergent electrodynamic phenomena, such as topological Hall effect (THE), remain unclear. Here, we investigate the role of interfacial DMIs in 3d-5d transition metal-oxide-based LaMnO₃/SrIrO₃ superlattices on THE from a chiral spin texture. By additively engineering the interfacial inversion symmetry with atomic-scale precision, we directly link the competition between interfacial collinear ferromagnetic interactions and DMIs to an enhanced THE. The ability to control the DMI and resulting THE points to a pathway for harnessing interfacial structures to maximize the density of chiral spin textures useful for developing high-density information storage and quantum magnets for quantum information science.

Strain induced spin-splitting and half-metallicity in antiferromagnetic bilayer silicene under bending

Searching for half-metals in low dimensional materials is not only of scientific importance, but also has important implications for the realization of spintronic devices on a small scale. In this work, we show theoretically that simple bending can induce spin-splitting in bilayer silicene. For bilayer silicene with Bernal stacking, the monolayer has a long range ferromagnetic spin order and between the two monolayers, the spin orders are opposite, giving rise to an antiferromagnetic configuration for the ground state of the bilayer silicene. Under bending, the antiferromagnetic spin order is retained but the energetic degeneracy of opposite spin states is lifted. Due to the unusual deformation potentials of the conduction band minimum (CBM) and valence band maximum (VBM) as revealed by density-functional theory calculations and density-functional tight-binding calculations, this spin-splitting is nearly proportional to the degree of bending deformation. Consequently, the spin-splitting can be significant and the desired half-metallic state may emerge when the bending increases, which has been verified by direct simulation of the bent bilayer silicene using the generalized Bloch theorem. Our results hint that bilayer silicene may be an excellent candidate for half-metallicity.

High-Throughput Computational Search for Half-Metallic Oxides

Half metals are a peculiar class of ferromagnets that have a metallic density of states at the Fermi level in one spin channel and simultaneous semiconducting or insulating properties in the opposite one. Even though they are very desirable for spintronics applications, identification of robust half-metallic materials is by no means an easy task. Because their unusual electronic structures emerge from subtleties in the hybridization of the orbitals, there is no simple rule which permits to select a priori suitable candidate materials. Here, we have conducted a high-throughput computational search for half-metallic compounds. The analysis of calculated electronic properties of thousands of materials from the inorganic crystal structure database allowed us to identify potential half metals. Remarkably, we have found over two-hundred strong half-metallic oxides; several of them have never been reported before. Considering the fact that oxides represent an important class of prospective spintronics materials, we have discussed them in further detail. In particular, they have been classified in different families based on the number of elements, structural formula, and distribution of density of states in the spin channels. We are convinced that such a framework can help to design rules for the exploration of a vaster chemical space and enable the discovery of novel half-metallic oxides with properties on demand.

Unconventional deformation potential and half-metallicity in zigzag nanoribbons of 2D-Xenes

Realization of half-metallicity (HM) in low dimensional materials is a fundamental challenge for nano spintronics and a critical component for developing alternative generations of information technology. Using first-principles calculations, we reveal an unconventional deformation potential for zigzag nanoribbons (NRs) of 2D-Xenes. Both the conduction band minimum (CBM) and valence band maximum (VBM) of the edge states have negative deformation potentials. This unique property, combined with the localization and spin-polarization of the edge states, enables us to induce spin-splitting and HM using an inhomogeneous strain pattern, such as simple in-plane bending. Indeed, our calculation using the generalized Bloch theorem reveals the predicted HM in bent zigzag silicene NRs. Furthermore, the magnetic stability of the long range magnetic order for the spin-polarized edge states is maintained well against the bending deformation. These aspects indicate that it is a promising approach to realize HM in low dimensions with the zigzag 2D-Xene NRs.

Effects of Oxygen Modification on the Structural and Magnetic Properties of Highly Epitaxial La0.7Sr0.3MnO3 (LSMO) thin films

La_0.7Sr_0.3MnO₃, a strong semi-metallic ferromagnet having robust spin polarization and magnetic transition temperature (T_C) well above 300 K, has attracted significant attention as a possible candidate for a wide range of memory, spintronic, and multifunctional devices. Since varying the oxygen partial pressure during growth is likely to change the structural and other physical functionalities of La_0.7Sr_0.3MnO₃ (LSMO) films, here we report detailed investigations on structure, along with magnetic behavior of LSMO films with same thickness (~30 nm) but synthesized at various oxygen partial pressures: 10, 30, 50, 100, 150, 200 and 250 mTorr. The observation of only (00 l) reflections without any secondary peaks in the XRD patterns confirms the high-quality synthesis of the above-mentioned films. Surface morphology of the films reveals that these films are very smooth with low roughness, the thin films synthesized at 150 mTorr having the lowest average roughness. The increasing of magnetic T_C and sharpness of the magnetic phase transitions with increasing oxygen growth pressure suggests that by decreasing the oxygen growth pressure leads to oxygen deficiencies in grown films which induce oxygen inhomogeneity. Thin films grown at 150 mTorr exhibits the highest magnetization with T_C = 340 K as these thin films possess the lowest roughness and might exhibit lowest oxygen vacancies and defects. Interpretation and significance of these results in the 30 nm LSMO thin films prepared at different oxygen growth pressures are also presented, along with the existence and growth pressure dependence of negative remanent magnetization (NRM) of the above-mentioned thin films.

Metal-free photocatalysts for hydrogen evolution

This article provides a comprehensive review of the latest progress, challenges and recommended future research related to metal-free photocatalysts for hydrogen productionviawater-splitting.