Large disparity between gallium and antimony self-diffusion in gallium antimonide

Nonlinear compositional and morphological evolution of ion irradiated GaSb prior to nanostructure formation

Low-energy ion irradiation of III-V semiconductor surfaces can lead to the formation of regular hexagonal dot patterns at the surface. We present experimental and computational results for ion irradiation of GaSb surfaces which elucidate the nature of the coupled compositional and morphological pattern-formation mechanisms. We demonstrate by in-situ grazing-incidence small-angle x-ray scattering (GISAXS) and angle-resolved Auger electron spectroscopy (ARAES) that the emergence of an altered compositional depth profile is essential to induce morphological changes at the surface. This morphological evolution of the surface follows nucleation-and-growth kinetics. Furthermore, we show from massive-scale molecular dynamics (MD) simulations that the compositional depth profile evolution leads to thermodynamic phase separation, providing a lateral compositional instability that drives pattern formation. Additionally, high-fluence simulations elucidate the irradiation-induced mechanisms of compositional depth profile formation. Prompt ion effects drive formation of single-element “protoclusters”, predominantly of Sb. Structural and energetic characterization of the simulation results indicate that Sb may be more mobile than Ga, providing a diffusional pathway for long-temporal-scale compositional evolution of the irradiated surface. Our findings motivate the development of new, comprehensive models which consider the total spatial and temporal complexity of multicomponent systems evolving under ion irradiation.

Crystal Structure Induced Preferential Surface Alloying of Sb on Wurtzite/Zinc Blende GaAs Nanowires

We study the surface diffusion and alloying of Sb into GaAs nanowires (NWs) with controlled axial stacking of wurtzite (Wz) and zinc blende (Zb) crystal phases. Using atomically resolved scanning tunneling microscopy, we find that Sb preferentially incorporates into the surface layer of the {110}-terminated Zb segments rather than the {112̅0}-terminated Wz segments. Density functional theory calculations verify the higher surface incorporation rate into the Zb phase and find that it is related to differences in the energy barrier of the Sb-for-As exchange reaction on the two surfaces. These findings demonstrate a simple processing-free route to compositional engineering at the monolayer level along NWs.

A thermodynamic approach of self- and hetero-diffusion in GaAs: connecting point defect parameters with bulk properties

GaAs diffusion is investigated with respect to temperature and pressure using a model that interconnects point defect with bulk properties.

Control of defect concentrations within a semiconductor through adsorption

The technologically useful properties of a crystalline solid depend upon the concentration of defects it contains. Here we show that defect concentrations as deep as 0.5 microm within a semiconductor can be profoundly influenced by gas adsorption. Self-diffusion rates within silicon show that nitrogen atoms adsorbed at less than 1% of a monolayer lead to defect concentrations that vary controllably over several orders of magnitude. The results show that previous measurements of diffusion and defect thermodynamics in semiconductors may have suffered from neglect of adsorption effects.

Template synthesis of metal nanowires containing monolayer molecular junctions

Metal nanowires containing in-wire monolayer junctions of 16-mercaptohexanoic acid were made by replication of the pores of 70 nm diameter polycarbonate track etch membranes. Au was electrochemically deposited halfway through the 6 microm long pores and a self-assembled monolayer (SAM) of 16-mercaptohexadecanoic acid was adsorbed on top. A thin layer of Au was then electrolessly grown to form a metal cap separated from the bottom part of the wire by the SAM. Electron micrographs showed that the bottom and top metal segments were separated by an approximately 2 nm thick organic monolayer. Current-voltage measurements of individual nanowires confirmed that the organic monolayer could be contacted electrically on the top and bottom by the metal nanowire segments without introducing electrical short circuits that penetrate the monolayer. The values of the electrical properties for zero-bias resistance, current density, and breakdown field strength were within the ranges expected for a well-ordered alkanethiol SAM of this thickness.