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Ahmed I, Shi L, Pasanen H, Vivo P, Maity P, Hatamvand M, Zhan Y. There is plenty of room at the top: generation of hot charge carriers and their applications in perovskite and other semiconductor-based optoelectronic devices. LIGHT, SCIENCE & APPLICATIONS 2021; 10:174. [PMID: 34465725 PMCID: PMC8408272 DOI: 10.1038/s41377-021-00609-3] [Citation(s) in RCA: 14] [Impact Index Per Article: 4.7] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 03/08/2021] [Revised: 07/22/2021] [Accepted: 07/31/2021] [Indexed: 06/13/2023]
Abstract
Hot charge carriers (HC) are photoexcited electrons and holes that exist in nonequilibrium high-energy states of photoactive materials. Prolonged cooling time and rapid extraction are the current challenges for the development of future innovative HC-based optoelectronic devices, such as HC solar cells (HCSCs), hot energy transistors (HETs), HC photocatalytic reactors, and lasing devices. Based on a thorough analysis of the basic mechanisms of HC generation, thermalization, and cooling dynamics, this review outlines the various possible strategies to delay the HC cooling as well as to speed up their extraction. Various materials with slow cooling behavior, including perovskites and other semiconductors, are thoroughly presented. In addition, the opportunities for the generation of plasmon-induced HC through surface plasmon resonance and their technological applications in hybrid nanostructures are discussed in detail. By judiciously designing the plasmonic nanostructures, the light coupling into the photoactive layer and its optical absorption can be greatly enhanced as well as the successful conversion of incident photons to HC with tunable energies can also be realized. Finally, the future outlook of HC in optoelectronics is highlighted which will provide great insight to the research community.
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Affiliation(s)
- Irfan Ahmed
- State Key Laboratory of ASIC and System, Centre of Micro-Nano System, SIST, Fudan University, 200433, Shanghai, China.
- Department of Physics, Government Postgraduate College, (Higher Education Department-HED) Khyber Pakhtunkhwa, 21300, Mansehra, Pakistan.
| | - Lei Shi
- State Key Laboratory of Surface Physics, Key Laboratory of Micro- and Nano-Photonics, Fudan University, 200433, Shanghai, China
| | - Hannu Pasanen
- Faculty of Engineering and Natural Sciences, Tampere University, FI-33014, Tampere, Finland
| | - Paola Vivo
- Faculty of Engineering and Natural Sciences, Tampere University, FI-33014, Tampere, Finland
| | - Partha Maity
- KAUST Solar Center, Division of Physical Science and Engineering, King Abdullah University of Science and Technology (KAUST), Thuwal, 23955-6900, Riyadh, Kingdom of Saudi Arabia
| | - Mohammad Hatamvand
- State Key Laboratory of ASIC and System, Centre of Micro-Nano System, SIST, Fudan University, 200433, Shanghai, China
| | - Yiqiang Zhan
- State Key Laboratory of ASIC and System, Centre of Micro-Nano System, SIST, Fudan University, 200433, Shanghai, China.
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