Near-infrared and mid-infrared semiconductor broadband light emitters

Unveiling Efficient Acousto-Optic Modulation in Silicon Photonic Devices via Lithium Niobate Using Transfer Printing

Piezo-optomechanics presents a promising route to convert microwave signals to the optical domain, implementing processing tasks that are challenging using conventional electronics. The surge of integrated photonics facilitates the exploitation of localized light-sound interactions toward new technological paradigms. However, efficient acousto-optic interaction has yet to be fully exploited in silicon due to the absence of piezoelectricity, despite its maturity in photonic integrated circuits. Here, we introduce a distinctive acousto-optic scheme to supplement silicon photonic devices through heterogeneous integration with lithium niobate (LN). Utilizing LN as an efficient acoustic pump to harness the inherently exceptional photoelasticity in silicon, we demonstrate efficient microwave-to-acoustic transduction, ultimately achieving a modulation figure-of-merit of VπL ∼ 0.496 V·cm. This efficient modulation scheme is further extended to implement non-reciprocal intermodal modulation. The proposed hybrid integration route opens new possibilities for tailoring photon-phonon interactions in silicon, consolidating acousto-optic technology in multifunctional integrated photonics.

Experimental Study on Damage Effect of Mid-Infrared Pulsed Laser on Charge Coupled Device (CCD) and HgCgTe Detectors

As the weak link in electro-optical imaging systems, photodetectors have always faced the threat of laser damage. In this paper, we experimentally investigated the damage mechanism of the photodetector induced by the out-of-band laser. The damage thresholds of the mid-infrared pulsed laser for Charge Coupled Device (CCD) and HgCdTe detectors were determined through damage experiments. The analysis of the damage phenomena and data for both CCD and HgCdTe detectors clearly demonstrated that out-of-band mid-infrared pulsed lasers could entirely incapacitate CCD and HgCdTe detectors. Our analysis of the damage process and data revealed that the primary mechanism of damage to CCD and HgCdTe detectors by mid-infrared pulsed lasers was primarily thermal. This study serves as a reference for further research on the mid-infrared pulsed laser damage mechanisms of CCD and HgCdTe detectors, as well as for laser protection and performance optimization in imaging systems.

Application of emerging technologies in ischemic stroke: from clinical study to basic research

Stroke is a primary cause of noncommunicable disease-related death and disability worldwide. The most common form, ischemic stroke, is increasing in incidence resulting in a significant burden on patients and society. Urgent action is thus needed to address preventable risk factors and improve treatment methods. This review examines emerging technologies used in the management of ischemic stroke, including neuroimaging, regenerative medicine, biology, and nanomedicine, highlighting their benefits, clinical applications, and limitations. Additionally, we suggest strategies for technological development for the prevention, diagnosis, and treatment of ischemic stroke.

Ultralarge Pixel Array Photothermal Film based on 3D Self-Suspended Microbridge Structure for Infrared Scene Projection

Infrared emitter is highly desirable for applications in infrared imaging and infrared stealth technology. It is also a core device in infrared scene generation. Light-driven photothermal film has attracted considerable interest due to its outstanding photothermal properties and easy fabrication. However, the existing photothermal films suffer from low photothermal conversion efficiency (PCE) as well as small sizes. The improvement of the PCE is usually achieved at the expense of dynamic frame rate. Here, this work designs and fabricates a photothermal film based on 3D self-suspended microbridge structure. Silicon (Si) microbridges are introduced into each microstructure to manipulate the thermal conductivity of the films. By optimizing the parameters of the Si microbridges, the high PCE and fast frame rate are both achieved. Moreover, the 3D structure microbridge film is 4-inch in diameter, forming an ultralarge array with over 2200 × 2200 pixels. Finally, a high PCE infrared scene projector is realized based on this photothermal film. A visible image is projected on the film, the 3D-microstructured photothermal film absorbs the visible light and emits an infrared image same as the visible one with high resolution and fast frame rate due to the excellent photothermal properties.

Highly efficient and thermally stable broadband NIR phosphors by rationally bridging Cr3+–Yb3+ in LiScGe2O6 for optical bioimaging

A broadband NIR phosphor covering the 750–1200 nm region with high luminescence efficiency and good thermal stability was realized by the energy transfer of Cr3+ → Yb3+.

Broadband Quantum Dot Superluminescent Diode with Simultaneous Three-State Emission

Semiconductor superluminescent light-emitting diodes (SLEDs) have emerged as ideal and vital broadband light sources with extensive applications, such as optical fiber-based sensors, biomedical sensing/imaging, wavelength-division multiplexing system testing and optoelectronic systems, etc. Self-assembled quantum dots (SAQDs) are very promising candidates for the realization of broadband SLED due to their intrinsic large inhomogeneous spectral broadening. Introducing excited states (ESs) emission could further increase the spectral bandwidth. However, almost all QD-based SLEDs are limited to the ground state (GS) or GS and first excited state (ES₁) emission. In this work, multiple five-QD-layer structures with large dot size inhomogeneous distribution were grown by optimizing the molecular beam epitaxy (MBE) growth conditions. Based on that, with the assistance of a carefully designed mirror-coating process to accurately control the cavity mirror loss of GS and ESs, respectively, a broadband QD-SLED with three simultaneous states of GS, ES₁ and second excited-state (ES₂) emission has been realized, exhibiting a large spectral width of 91 nm with a small spectral dip of 1.3 dB and a high continuous wave (CW) output power of 40 mW. These results pave the way for a new fabrication technique for high-performance QD-based low-coherent light sources.

Lanthanide doped lead-free double perovskites as the promising next generation ultra-broadband light sources

Efficient ultra-broadband emitter is realized by using lanthanide ion doping coupled with "DPs-in-glass composite" (DiG) structure. The synergy of self-trapped exciton together with the energy transition induce this ultra-broadband emission emerge.

Recent Developments of Quantum Dot Materials for High Speed and Ultrafast Lasers

Owing to their high integration and functionality, nanometer-scale optoelectronic devices based on III-V semiconductor materials are emerging as an enabling technology for fiber-optic communication applications. Semiconductor quantum dots (QDs) with the three-dimensional carrier confinement offer potential advantages to such optoelectronic devices in terms of high modulation bandwidth, low threshold current density, temperature insensitivity, reduced saturation fluence, and wavelength flexibility. In this paper, we review the development of the molecular beam epitaxial (MBE) growth methods, material properties, and device characteristics of semiconductor QDs. Two kinds of III-V QD-based lasers for optical communication are summarized: one is the active electrical pumped lasers, such as the Fabry–Perot lasers, the distributed feedback lasers, and the vertical cavity surface emitting lasers, and the other is the passive lasers and the instance of the semiconductor saturable absorber mirrors mode-locked lasers. By analyzing the pros and cons of the different QD lasers by their structures, mechanisms, and performance, the challenges that arise when using these devices for the applications of fiber-optic communication have been presented.

Glass-Crystallized Luminescence Translucent Ceramics toward High-Performance Broadband NIR LEDs

Near-infrared (NIR) phosphor-converted light-emitting diodes (pc-LEDs) are newly emergent broadband light sources for miniaturizing optical systems like spectrometers. However, traditional converters with NIR phosphors encapsulated by organic resins suffer from low external quantum efficiency (EQE), strong thermal quenching as well as low thermal conductivity, thus limiting the device efficiency and output power. Through pressureless crystallization from the designed aluminosilicate glasses, here broadband Near-infrared (NIR) emitting translucent ceramics are developed with high EQE (59.5%) and excellent thermal stability (<10% intensity loss and negligible variation of emission profile at 150 °C) to serve as all-inorganic visible-to-NIR converters. A high-performance NIR phosphor-converted light emitting diodes is further demonstrated with a record NIR photoelectric efficiency (output power) of 21.2% (62.6 mW) at 100 mA and a luminescence saturation threshold up to 184 W cm-2 . The results can substantially expand the applications of pc-LEDs, and may open up new opportunity to design efficient broadband emitting materials.

Dual near infrared emission in Ag2Se quantum dots via Pb doping for broadband mini light-emitting diodes

Dual emission almost covering the entire NIR-II region with the maximum full width at half maximum of 542 nm was achieved by doping small amounts of Pb ions into Ag2Se...

Carrier dynamics and lasing behavior of InAs/GaAs quantum dot lasers with short cavity lengths

The modulation p-doping technique has emerged as an effective way to optimize the carrier dynamics process of quantum dot (QD) structures. Here, the laser structures based on the 1.3μm multiple-layer InAs/GaAs QD were fabricated with and without modulation p-doping. The carrier relaxation rate was increased after modulation p-doping, as demonstrated by transient absorption spectroscopy. The higher relaxation rate in p-doped QDs could be explained by more rapid carrier-carrier scattering process originating from increasing of the hole quasi-Fermi-level movement that increases the probability of occupancy of the valence states. In addition, the lasing behavior of Fabry-Perot lasers with and without modulation p-doping was investigated and compared. It was found that the ground state (GS) lasing in the absence of facet coating was successfully achieved in a p-doped laser diode with short cavity length (400μm), which can be attributed to the higher GS saturation gain caused by p-doping. With assistance of a designed TiO₂/SiO₂facet coating whose central wavelength (∼1480 nm) is far beyond the lasing wavelength of 1310 nm, the GS lasing could be realized in a laser diode with short cavity lengths (300μm) under continuous wave operation at room temperature, implying great potential for the development of low-cost and high-speed directly modulated lasers.

Effect of Substrate Misorientation on the Structural and Optical Characteristics of In-Rich InGaAs/GaAsP Quantum Wells

InGaAs quantum well (QW) lasers have attracted significant attention owing to their considerable potential for applications in optical communications; however, the relationship between the misorientation of the substrates used to grow InGaAs QWs and the structural and optical properties of QWs is still ambiguous. In this study, In-rich InGaAs/GaAsP single QWs were grown in the same run via metal organic chemical vapor deposition on GaAs (001) substrates misoriented by 0°, 2°, and 15° toward (111). The effects of substrate misorientation on the crystal quality and structural properties of InGaAs/GaAsP were investigated by X-ray diffraction and Raman spectroscopy. The 0° substrate exhibited the least lattice relaxation, and with increasing misorientation, the degree of lattice relaxation increased. The optical properties of the InGaAs/GaAsP QWs were investigated using temperature-dependent photoluminescence. An abnormal S-shaped variation of the peak energy and inverse evolution of the spectral bandwidth were observed at low temperatures for the 2° substrate, caused by the localization potentials due to the In-rich clusters. Surface morphology observations revealed that the growth mode varied with different miscuts. Based on the experimental results obtained in this study, a mechanism elucidating the effect of substrate miscuts on the structural and optical properties of QWs was proposed and verified.

Broadband Anti-Reflection Coatings Fabricated by Precise Time-Controlled and Oblique-Angle Deposition Methods

Broadband anti-reflection (AR) coatings are essential elements for improving the photocurrent generation of photovoltaic modules and enhancing visibility in optical devices. In this paper, we report a hybrid-structured, anti-reflection coating that combines multi-layer thin films with a single top-oblique deposited layer. By simply introducing this low-refractive index layer, the broadband anti-reflection properties of optical thin films can be improved while simplifying the preparation. Precise time-controlled and oblique-angle deposition (OAD) methods were used to fabricate the broadband AR coating. By accurately measuring and adjusting the design errors for the thin and thick film layers, 22-layer and 36-layer AR coatings on a sapphire substrate with a 400–2000 nm wideband were obtained. This bottom-up preparation process and AR coating design have the potential to significantly enhance the broadband antireflective properties for many optical systems and reduce the manufacturing cost of broadband AR coatings.

An electrically driven whispering gallery polariton microlaser

Near-infrared micro/nanolaser devices utilizing low-dimensional semiconductors can provide essential building blocks to achieve integrated optoelectronic devices and circuitry for advanced functionalities and are compatible with on-chip technologies. Although significant progress has been made through using narrow-band semiconductor micro/nanostructures to realize near-infrared stimulated radiation at room temperature, severe challenges still remain involving much lower quantum efficiencies and higher auger recombination. Herein, we report an experimental realization of a current-injection semiconductor polariton device made of a ZnO microwire via Ga-doping (ZnO:Ga MW) and p-type GaAs template. The device can emit polaritonic illumination directly from sharp edges of the hexagonal MW. The experimental results of angle-resolved electroluminescence measurements reveal a typical anticrossing feature between excitons and cavity modes, unambiguous evidence of the strong exciton-polariton coupling, with corresponding Rabi splitting energy extracted to be about 195 meV. As the applied bias goes above a certain value, electrically driven whispering gallery lasing action was achieved in the near-infrared spectrum, and the lasing features can be assigned to the exciton-polariton effect. The results not only can afford insights into the development of low-threshold coherent light sources via the exciton-polariton effect, but also can expand the fabrication of low-dimensional, near-infrared microlaser devices.

Recent advances in focused ion beam nanofabrication for nanostructures and devices: fundamentals and applications

The past few decades have witnessed growing research interest in developing powerful nanofabrication technologies for three-dimensional (3D) structures and devices to achieve nano-scale and nano-precision manufacturing. Among the various fabrication techniques, focused ion beam (FIB) nanofabrication has been established as a well-suited and promising technique in nearly all fields of nanotechnology for the fabrication of 3D nanostructures and devices because of increasing demands from industry and research. In this article, a series of FIB nanofabrication factors related to the fabrication of 3D nanostructures and devices, including mechanisms, instruments, processes, and typical applications of FIB nanofabrication, are systematically summarized and analyzed in detail. Additionally, current challenges and future development trends of FIB nanofabrication in this field are also given. This work intends to provide guidance for practitioners, researchers, or engineers who wish to learn more about the FIB nanofabrication technology that is driving the revolution in 3D nanostructures and devices.

An electrically driven single microribbon based near-infrared exciton–polariton light-emitting diode

An electrically driven exciton–polariton NIR-LED involving an n-ZnO:Ga microribbon/p-GaAs heterojunction was achieved. The Rabi splitting is measured to be 109 meV.

Electrically pumped continuous-wave O-band quantum-dot superluminescent diode on silicon

High-power, broadband quantum-dot (QD) superluminescent diodes (SLDs) are ideal light sources for optical coherence tomography (OCT) imaging systems but have previously mainly been fabricated on native GaAs- or InP-based substrates. Recently, significant progress has been made to emigrate QD SLDs from native substrates to silicon substrates. Here, we demonstrate electrically pumped continuous-wave InAs QD SLDs monolithically grown on silicon substrates with significantly improved performance thanks to the achievement of a low density of defects in the III-V epilayers. The fabricated narrow-ridge-waveguide device exhibits a maximum 3 dB bandwidth of 103 nm emission spectrum centered at the O-band together with a maximum single facet output power of 3.8 mW at room temperature. The silicon-based SLD has been assessed for application in an OCT system. Under optimized conditions, a predicted axial resolution of ∼5.3µm is achieved with a corresponding output power of 0.66 mW/facet.

Standoff Chemical Detection Using Laser Absorption Spectroscopy: A Review

Remote chemical detection in the atmosphere or some specific space has always been of great interest in many applications for environmental protection and safety. Laser absorption spectroscopy (LAS) is a highly desirable technology, benefiting from high measurement sensitivity, improved spectral selectivity or resolution, fast response and capability of good spatial resolution, multi-species and standoff detection with a non-cooperative target. Numerous LAS-based standoff detection techniques have seen rapid development recently and are reviewed herein, including differential absorption LiDAR, tunable laser absorption spectroscopy, laser photoacoustic spectroscopy, dual comb spectroscopy, laser heterodyne radiometry and active coherent laser absorption spectroscopy. An update of the current status of these various methods is presented, covering their principles, system compositions, features, developments and applications for standoff chemical detection over the last decade. In addition, a performance comparison together with the challenges and opportunities analysis is presented that describes the broad LAS-based techniques within the framework of remote sensing research and their directions of development for meeting potential practical use.

Plasmon-enhanced high-performance Si-based light sources by incorporating alloyed Au and Ag nanorods

Benefitting from alloyed Au and Ag nanorods with desired plasmons, single ZnO:Ga microwire assembled on a p-Si template, can provide a promising candidate for the realization of high-efficiency Si-based light sources

Perovskite quantum dots for light-emitting devices

Perovskite quantum dots (QDs) have been hotly pursued in recent decades owing to their quantum confinement effect and defect-tolerant nature. Their unique optical properties, such as high photoluminescence quantum yield (PLQY) approaching unity, narrow emission bandwidth, tunable wavelength spanning the entire visible spectrum, and compatibility with flexible/stretchable electronics, render perovskite QDs promising for next-generation solid lighting sources and information displays. Herein, the advances in perovskite QDs and their applications in LEDs are reviewed. Strategies to fabricate efficient perovskite QDs and device configuration, including material composition design, synthetic methods, surface engineering, and device optimization, are investigated and highlighted. Moreover, the main challenges in perovskite QDs of instability and toxicity (lead-based) are identified, while the solutions undertaken with respect to composition engineering, device encapsulation, and lead-replacement QDs are demonstrated. Meanwhile, perspectives for the further development of perovskite QDs and corresponding LEDs are presented.

InAs on GaAs Photodetectors Using Thin InAlAs Graded Buffers and Their Application to Exceeding Short-Wave Infrared Imaging at 300 K

Short-wave infrared (SWIR) detectors and emitters have a high potential value in several fields of applications, including the internet of things (IoT) and advanced driver assistance systems (ADAS), gas sensing. Indium Gallium Arsenide (InGaAs) photodetectors are widely used in the SWIR region of 1–3 μm; however, they only capture a part of the region due to a cut-off wavelength of 1.7 μm. This study presents an InAs p-i-n photodetector grown on a GaAs substrate (001) by inserting 730-nm thick In_xAl_1−xAs graded and AlAs buffer layers between the InAs layer and the GaAs substrate. At room temperature, the fabricated InAs photodetector operated in an infrared range of approximately 1.5–4 μm and its detectivity (D^*) was 1.65 × 10⁸ cm · Hz^1/2 · W⁻¹ at 3.3 μm. To demonstrate performance, the Sherlock Holmes mapping images were obtained using the photodetector at room temperature.

InAs/GaAs quantum dot semiconductor saturable absorber for controllable dual-wavelength passively Q-switched fiber laser

We experimentally demonstrate the first use of 1550-nm InAs/GaAs quantum dot semiconductor saturable absorber mirror (QD-SESAM) in the dual-wavelength passively Q-switched (QS) erbium doped fiber (EDF) laser. The dual-wavelength QS lasing was obtained at a pump threshold of 180 mW with the average output power of 2.2 mW and the spacing between the two lasing wavelengths is 14 nm. A large absorption ranging from 1520 to 1590 nm has been realized when no substrate rotation was employed during the molecular beam epitaxy growth of the QD-SESAM indicating the potential to generate a 60 nm spacing of the dual-wavelength QS lasing peaks by changing the positions in the QD-SESAM and replacing EDF by co-doped fiber as gain medium. These results have provided a new opportunity towards achieving the stable and wide wavelength-tunable dual-modes fiber lasers.

Hybrid Nanostructured Antireflection Coating by Self-Assembled Nanosphere Lithography

Broadband antireflection (AR) coatings are essential elements for improving the photocurrent generation of photovoltaic modules or the enhancement of visibility in optical devices. In this paper, we report a hybrid nanostructured antireflection coating combination that is a clean and efficient method for fabricating a nanostructured antireflection coating (ARC). A multilayer thin-film was introduced between the ARC and substrate to solve the significant problem of preparing nanostructured ARCs on different substrates. In this way, we rebuilt a gradient refractive index structure and optimize the antireflective property by simply adjusting the moth-eye structure and multilayers. Subwavelength-structured cone arrays were directly patterned using a self-assembled single-layer polystyrene (PS) nanosphere array as an etching mask. Nanostructure coatings exhibited excellent broadband and wide-angle antireflective properties. The bottom-up preparation process and hybrid structural combination have the potential to significantly enhance the broadband and wide-angle antireflective properties for a number of optical systems that require high transparency, which is promising for reducing the manufacturing cost of nanostructured AR coatings.

Multiband enhancement of magnetic dipole emission with tapered hollow hyperbolic metamaterials

Based on a single resonance, nanostructures often provide narrowband enhancement for magnetic dipole emissions. Here, tapered hollow hyperbolic metamaterial is designed in order to produce a multiband emission enhancement. Specifically, a series of coaxial magnetic hot spots is excited inside the structure in five discrete bands. Meanwhile, we demonstrate that the emission enhancement can be achieved at both multiple wavelengths and multiple spatial positions in one single device. An enhancement factor of radiative decay rate up to 694 is obtained. Results of this paper might open new possibilities for nanostructures to achieve multiband light emission enhancement in the magneto-optical domain.

Facile synthesized ZnO microcrystals for random microlasers and incandescent-type light sources

Well-crystallized ZnO microcrystals (MCs) with a well-faceted, smooth surface were successfully synthesized and employed to construct ultraviolet microsized random lasers.

Mid-infrared Fourier-domain optical coherence tomography with a pyroelectric linear array

Optical technology in the mid-infrared wavelength range is currently a rapidly developing field initiated by the availability of novel high-power and spatially coherent sources. Non-destructive testing techniques based on these sources are very promising for industrial and medical applications. However, there are still many engineering problems due to the technical challenges and high prices of the optical elements suitable for the mid-infrared region. In this paper, we report the development and performances of the first mid-infrared Fourier-domain optical coherence tomography based on a supercontinuum source and low-cost pyroelectric detector. The system is designed to operate in the spectral region around 4 μm. Experimental results are demonstrated for detections of embedded microstructures in ceramic materials and subsurface oil paint layers.

Mid-infrared broadband superluminescent light emitter arrays

Mid-infrared (MIR) room-temperature (RT) and continuous-wave (CW) broadband quantum cascade superluminescent light emitters (QCSLEs) have emerged as ideal broadband light sources for a number of applications of biomedical imaging, security inspection, and gas detection. It is quite challenging to attain a RT-CW output power up to milliwatt level due to the very low efficiency of the spontaneous emission in the intersubband transitions in QCSLEs. In this work, for the first time to the best of our knowledge, a compact light emitter array is realized by integrating several single emitters exhibiting a very high RT-CW power of 2.4 mW, which is attributed to the sufficient low reflectivity provided by the waveguide structure that includes three sections with a short straight part adjacent to a tilted stripe and to a J-shaped waveguide, and the two-phonon resonance QC active structure. This advancement is certainly a big step forward to the applications of broadband light sources towards MIR photonics.

Room-temperature quantum cascade superluminescent light emitters with wide bandwidth and high temperature stability

The realization of room-temperature (RT) mid-infrared (MIR) broadband light sources is fundamentally interesting and highly desirable for a number of applications. Recently, superluminescent light emitters (SLEs) based on quantum cascade (QC) structures have emerged as excellent candidates among mid-infrared broadband light sources. However, it is challenging to achieve RT-QCSLEs due to the very low efficiency of the spontaneous emission in the intersubband transitions. Here, we demonstrate the realization of a set of ~5 μm RT-SLEs under continuous wave (CW) or quasi-CW (10% duty circle) operation by using a two-phonon resonant QC active region and monolithic integrated waveguide structures. In addition, with the design of an inclined tapered cavity, the SLEs exhibit high milliwatt power, large spectral width of more than 200 cm^-1 and good temperature characteristic. These demonstrated results are believed to be a big step forward to the applications of broadband MIR semiconductor light sources.