Semiconductor-inspired design principles for superconducting quantum computing

Erasure Detection of a Dual-Rail Qubit Encoded in a Double-Post Superconducting Cavity

Qubits with predominantly erasure errors present distinctive advantages for quantum error correction (QEC) and fault-tolerant quantum computing. Logical qubits based on dual-rail encoding that exploit erasure detection have been recently proposed in superconducting circuit architectures, with either coupled transmons or cavities. Here, we implement a dual-rail qubit encoded in a compact, double-post superconducting cavity. Using an auxiliary transmon, we perform erasure detection on the dual-rail subspace. We characterize the behavior of the code space by a novel method to perform joint-Wigner tomography. This is based on modifying the cross-Kerr interaction between the cavity modes and the transmon. We measure an erasure rate of 3.981±0.003  (ms)^{-1} and a residual, postselected dephasing error rate up to 0.17  (ms)^{-1} within the code space. This strong hierarchy of error rates, together with the compact and hardware-efficient nature of this novel architecture, holds promise in realizing QEC schemes with enhanced thresholds and improved scaling.

Recent Progress in 1D Contacts for 2D-Material-Based Devices

Recent studies have intensively examined 2D materials (2DMs) as promising materials for use in future quantum devices due to their atomic thinness. However, a major limitation occurs when 2DMs are in contact with metals: a van der Waals (vdW) gap is generated at the 2DM-metal interfaces, which induces metal-induced gap states that are responsible for an uncontrollable Schottky barrier (SB), Fermi-level pinning (FLP), and high contact resistance (R_C ), thereby substantially lowering the electronic mobility of 2DM-based devices. Here, vdW-gap-free 1D edge contact is reviewed for use in 2D devices with substantially suppressed carrier scattering of 2DMs with hexagonal boron nitride (hBN) encapsulation. The 1D contact further enables uniform carrier transport across multilayered 2DM channels, high-density transistor integration independent of scaling, and the fabrication of double-gate transistors suitable for demonstrating unique quantum phenomena of 2DMs. The existing 1D contact methods are reviewed first. As a promising technology toward the large-scale production of 2D devices, seamless lateral contacts are reviewed in detail. The electronic, optoelectronic, and quantum devices developed via 1D contacts are subsequently discussed. Finally, the challenges regarding the reliability of 1D contacts are addressed, followed by an outlook of 1D contact methods.

Enabling single qubit addressability in a molecular semiconductor comprising gold-supported organic radicals

A bis(dithiolene)gold complex is presented as a model for an organic molecular electron spin qubit attached to a metallic surface that acts as a conduit to electrically address the qubit. A two-membered electron transfer series is developed of the formula [AuIII(adt)2]1-/0, where adt is a redox-active dithiolene ligand that is sequentially oxidized as the series is traversed while the central metal ion remains AuIII and steadfastly square planar. One-electron oxidation of diamagnetic [AuIII(adt)2]1- (1) produces an S = 1/2 charge-neutral complex, [AuIII(adt2 3-˙)] (2) which is spectroscopically and theoretically characterized with a near negligible Au contribution to the ground state. A phase memory time (T M) of 21 μs is recorded in 4 : 1 CS2/CCl4 at 10 K, which is the longest ever reported for a coordination complex possessing a third-row transition metal ion. With increasing temperature, T M dramatically decreases becoming unmeasurable above 80 K as a consequence of the diminishing spin-lattice (T 1) relaxation time fueled by spin-orbit coupling. These relaxation times are 1-2 orders of magnitude shorter for the solid dilution of 2 in isoelectronic [Ni(adt)2] because this material is a molecular semiconductor. Although the conducting properties of this material provide efficient pathways to dissipate the energy through the lattice, it can also be used to electrically address the paramagnetic dopant by tapping into the mild reduction potential to switch magnetism "on" and "off" in the gold complex without compromising the integrity of its structure. These results serve to highlight the need to consider all components of these spintronic assemblies.