1
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Wu W, Shi Z, Ozerov M, Du Y, Wang Y, Ni XS, Meng X, Jiang X, Wang G, Hao C, Wang X, Zhang P, Pan C, Pan H, Sun Z, Yang R, Xu Y, Hou Y, Yan Z, Zhang C, Lu HZ, Chu J, Yuan X. The discovery of three-dimensional Van Hove singularity. Nat Commun 2024; 15:2313. [PMID: 38485978 PMCID: PMC10940667 DOI: 10.1038/s41467-024-46626-9] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 07/04/2023] [Accepted: 02/29/2024] [Indexed: 03/18/2024] Open
Abstract
Arising from the extreme/saddle point in electronic bands, Van Hove singularity (VHS) manifests divergent density of states (DOS) and induces various new states of matter such as unconventional superconductivity. VHS is believed to exist in one and two dimensions, but rarely found in three dimension (3D). Here, we report the discovery of 3D VHS in a topological magnet EuCd2As2 by magneto-infrared spectroscopy. External magnetic fields effectively control the exchange interaction in EuCd2As2, and shift 3D Weyl bands continuously, leading to the modification of Fermi velocity and energy dispersion. Above the critical field, the 3D VHS forms and is evidenced by the abrupt emergence of inter-band transitions, which can be quantitatively described by the minimal model of Weyl semimetals. Three additional optical transitions are further predicted theoretically and verified in magneto-near-infrared spectra. Our results pave the way to exploring VHS in 3D systems and uncovering the coordination between electronic correlation and the topological phase.
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Affiliation(s)
- Wenbin Wu
- State Key Laboratory of Precision Spectroscopy, East China Normal University, 200241, Shanghai, China
- Key Laboratory of Polar Materials and Devices, Ministry of Education, School of Physics and Electronic Science, East China Normal University, 200241, Shanghai, China
- Shanghai Center of Brain-Inspired Intelligent Materials and Devices, East China Normal University, 200241, Shanghai, China
| | - Zeping Shi
- State Key Laboratory of Precision Spectroscopy, East China Normal University, 200241, Shanghai, China
| | - Mykhaylo Ozerov
- National High Magnetic Field Laboratory, Florida State University, Tallahassee, FL, 32310, USA
| | - Yuhan Du
- State Key Laboratory of Precision Spectroscopy, East China Normal University, 200241, Shanghai, China
| | - Yuxiang Wang
- State Key Laboratory of Surface Physics and Institute for Nanoelectronic Devices and Quantum Computing, Fudan University, 200433, Shanghai, China
| | - Xiao-Sheng Ni
- Guangdong Provincial Key Laboratory of Magnetoelectric Physics and Devices, School of Physics, Sun Yat-Sen University, 510275, Guangzhou, China
| | - Xianghao Meng
- State Key Laboratory of Precision Spectroscopy, East China Normal University, 200241, Shanghai, China
| | - Xiangyu Jiang
- State Key Laboratory of Precision Spectroscopy, East China Normal University, 200241, Shanghai, China
| | - Guangyi Wang
- State Key Laboratory of Precision Spectroscopy, East China Normal University, 200241, Shanghai, China
| | - Congming Hao
- State Key Laboratory of Precision Spectroscopy, East China Normal University, 200241, Shanghai, China
| | - Xinyi Wang
- State Key Laboratory of Precision Spectroscopy, East China Normal University, 200241, Shanghai, China
| | - Pengcheng Zhang
- State Key Laboratory of Precision Spectroscopy, East China Normal University, 200241, Shanghai, China
| | - Chunhui Pan
- Multifunctional Platform for Innovation Precision Machining Center, East China Normal University, 200241, Shanghai, China
| | - Haifeng Pan
- State Key Laboratory of Precision Spectroscopy, East China Normal University, 200241, Shanghai, China
| | - Zhenrong Sun
- State Key Laboratory of Precision Spectroscopy, East China Normal University, 200241, Shanghai, China
| | - Run Yang
- Key Laboratory of Quantum Materials and Devices of Ministry of Education, School of Physics, Southeast University, 211189, Nanjing, China
| | - Yang Xu
- Key Laboratory of Polar Materials and Devices, Ministry of Education, School of Physics and Electronic Science, East China Normal University, 200241, Shanghai, China
| | - Yusheng Hou
- Guangdong Provincial Key Laboratory of Magnetoelectric Physics and Devices, School of Physics, Sun Yat-Sen University, 510275, Guangzhou, China
| | - Zhongbo Yan
- Guangdong Provincial Key Laboratory of Magnetoelectric Physics and Devices, School of Physics, Sun Yat-Sen University, 510275, Guangzhou, China
| | - Cheng Zhang
- State Key Laboratory of Surface Physics and Institute for Nanoelectronic Devices and Quantum Computing, Fudan University, 200433, Shanghai, China
- Zhangjiang Fudan International Innovation Center, Fudan University, 201210, Shanghai, China
| | - Hai-Zhou Lu
- Shenzhen Institute for Quantum Science and Engineering and Department of Physics, Southern University of Science and Technology (SUSTech), 518055, Shenzhen, China
| | - Junhao Chu
- Key Laboratory of Polar Materials and Devices, Ministry of Education, School of Physics and Electronic Science, East China Normal University, 200241, Shanghai, China
- Institute of Optoelectronics, Fudan University, 200438, Shanghai, China
| | - Xiang Yuan
- State Key Laboratory of Precision Spectroscopy, East China Normal University, 200241, Shanghai, China.
- Key Laboratory of Polar Materials and Devices, Ministry of Education, School of Physics and Electronic Science, East China Normal University, 200241, Shanghai, China.
- Shanghai Center of Brain-Inspired Intelligent Materials and Devices, East China Normal University, 200241, Shanghai, China.
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2
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Klebel-Knobloch B, Tabiś W, Gala MA, Barišić OS, Sunko DK, Barišić N. Transport properties and doping evolution of the Fermi surface in cuprates. Sci Rep 2023; 13:13562. [PMID: 37604843 PMCID: PMC10442347 DOI: 10.1038/s41598-023-39813-z] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 03/22/2023] [Accepted: 07/31/2023] [Indexed: 08/23/2023] Open
Abstract
Measured transport properties of three representative cuprates are reproduced within the paradigm of two electron subsystems, itinerant and localized. The localized subsystem evolves continuously from the Cu 3d[Formula: see text] hole at half-filling and corresponds to the (pseudo)gapped parts of the Fermi surface. The itinerant subsystem is observed as a pure Fermi liquid (FL) with material-independent universal mobility across the doping/temperature phase diagram. The localized subsystem affects the itinerant one in our transport calculations solely by truncating the textbook FL integrals to the observed (doping- and temperature-dependent) Fermi arcs. With this extremely simple picture, we obtain the measured evolution of the resistivity and Hall coefficients in all three cases considered, including LSCO which undergoes a Lifshitz transition in the relevant doping range, a complication which turns out to be superficial. Our results imply that prior to evoking polaronic, quantum critical point, quantum dissipation, or even more exotic scenarios for the evolution of transport properties in cuprates, Fermi-surface properties must be addressed in realistic detail.
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Affiliation(s)
| | - W Tabiś
- Institute of Solid State Physics, TU Wien, 1040, Vienna, Austria
- Faculty of Physics and Applied Computer Science, AGH University of Krakow, 30-059, Krakow, Poland
| | - M A Gala
- Institute of Solid State Physics, TU Wien, 1040, Vienna, Austria
- Faculty of Physics and Applied Computer Science, AGH University of Krakow, 30-059, Krakow, Poland
| | - O S Barišić
- Institute of Physics, Bijenička cesta 46, HR-10000, Zagreb, Croatia.
| | - D K Sunko
- Department of Physics, Faculty of Science, University of Zagreb, Bijenička cesta 32, HR-10000, Zagreb, Croatia.
| | - N Barišić
- Institute of Solid State Physics, TU Wien, 1040, Vienna, Austria.
- Department of Physics, Faculty of Science, University of Zagreb, Bijenička cesta 32, HR-10000, Zagreb, Croatia.
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3
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Tromp WO, Benschop T, Ge JF, Battisti I, Bastiaans KM, Chatzopoulos D, Vervloet AHM, Smit S, van Heumen E, Golden MS, Huang Y, Kondo T, Takeuchi T, Yin Y, Hoffman JE, Sulangi MA, Zaanen J, Allan MP. Puddle formation and persistent gaps across the non-mean-field breakdown of superconductivity in overdoped (Pb,Bi) 2Sr 2CuO 6+δ. NATURE MATERIALS 2023; 22:703-709. [PMID: 36879002 DOI: 10.1038/s41563-023-01497-1] [Citation(s) in RCA: 1] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/20/2022] [Accepted: 01/31/2023] [Indexed: 06/03/2023]
Abstract
The cuprate high-temperature superconductors exhibit many unexplained electronic phases, but the superconductivity at high doping is often believed to be governed by conventional mean-field Bardeen-Cooper-Schrieffer theory1. However, it was shown that the superfluid density vanishes when the transition temperature goes to zero2,3, in contradiction to expectations from Bardeen-Cooper-Schrieffer theory. Our scanning tunnelling spectroscopy measurements in the overdoped regime of the (Pb,Bi)2Sr2CuO6+δ high-temperature superconductor show that this is due to the emergence of nanoscale superconducting puddles in a metallic matrix4,5. Our measurements further reveal that this puddling is driven by gap filling instead of gap closing. The important implication is that it is not a diminishing pairing interaction that causes the breakdown of superconductivity. Unexpectedly, the measured gap-to-filling correlation also reveals that pair breaking by disorder does not play a dominant role and that the mechanism of superconductivity in overdoped cuprate superconductors is qualitatively different from conventional mean-field theory.
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Affiliation(s)
- Willem O Tromp
- Leiden Institute of Physics, Leiden University, Leiden, The Netherlands
| | - Tjerk Benschop
- Leiden Institute of Physics, Leiden University, Leiden, The Netherlands
| | - Jian-Feng Ge
- Leiden Institute of Physics, Leiden University, Leiden, The Netherlands
| | - Irene Battisti
- Leiden Institute of Physics, Leiden University, Leiden, The Netherlands
| | - Koen M Bastiaans
- Leiden Institute of Physics, Leiden University, Leiden, The Netherlands
- Department of Quantum Nanoscience, Kavli Institute of Nanoscience, Delft University of Technology, Delft, The Netherlands
| | | | | | - Steef Smit
- Institute of Physics, University of Amsterdam, Amsterdam, The Netherlands
| | - Erik van Heumen
- Institute of Physics, University of Amsterdam, Amsterdam, The Netherlands
- QuSoft, Amsterdam, The Netherlands
| | - Mark S Golden
- Institute of Physics, University of Amsterdam, Amsterdam, The Netherlands
| | - Yinkai Huang
- Institute of Physics, University of Amsterdam, Amsterdam, The Netherlands
| | - Takeshi Kondo
- Institute for Solid State Physics, University of Tokyo, Kashiwa, Japan
| | | | - Yi Yin
- Zhejiang Province Key Laboratory of Quantum Technology and Device, Department of Physics, Zhejiang University, Hangzhou, China
- Collaborative Innovation Centre of Advanced Microstructures, Nanjing University, Nanjiang, China
| | | | - Miguel Antonio Sulangi
- Department of Physics, University of Florida, Gainesville, FL, USA
- National Institute of Physics, College of Science, University of the Philippines, Diliman, Quezon City, Philippines
| | - Jan Zaanen
- Institute-Lorentz for Theoretical Physics, Leiden University, Leiden, The Netherlands
| | - Milan P Allan
- Leiden Institute of Physics, Leiden University, Leiden, The Netherlands.
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4
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Wu X, Ming F, Smith TS, Liu G, Ye F, Wang K, Johnston S, Weitering HH. Superconductivity in a Hole-Doped Mott-Insulating Triangular Adatom Layer on a Silicon Surface. PHYSICAL REVIEW LETTERS 2020; 125:117001. [PMID: 32976011 DOI: 10.1103/physrevlett.125.117001] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/17/2020] [Accepted: 08/07/2020] [Indexed: 06/11/2023]
Abstract
Adsorption of one-third monolayer of Sn on an atomically clean Si(111) substrate produces a two-dimensional triangular adatom lattice with one unpaired electron per site. This dilute adatom reconstruction is an antiferromagnetic Mott insulator; however, the system can be modulation doped and metallized using heavily doped p-type Si(111) substrates. Here, we show that the hole-doped dilute adatom layer on a degenerately doped p-type Si(111) wafer is superconducting with a critical temperature of 4.7±0.3 K. While a phonon-mediated coupling scenario would be consistent with the observed T_{c}, Mott correlations in the Sn-derived dangling-bond surface state could suppress the s-wave pairing channel. The latter suggests that the superconductivity in this triangular adatom lattice may be unconventional.
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Affiliation(s)
- Xuefeng Wu
- Department of Physics, Southern University of Science and Technology, Shenzhen, Guangdong 518055, China
| | - Fangfei Ming
- State Key Laboratory of Optoelectronic Materials and Technologies, School of Electronics and Information Technology and Guangdong Province Key Laboratory of Display Material and Technology, Sun Yat-sen University, Guangzhou 510275, China
| | - Tyler S Smith
- Department of Physics and Astronomy, The University of Tennessee, Knoxville, Tennessee 37996, USA
| | - Guowei Liu
- Department of Physics, Southern University of Science and Technology, Shenzhen, Guangdong 518055, China
| | - Fei Ye
- Department of Physics, Southern University of Science and Technology, Shenzhen, Guangdong 518055, China
| | - Kedong Wang
- Department of Physics, Southern University of Science and Technology, Shenzhen, Guangdong 518055, China
| | - Steven Johnston
- Department of Physics and Astronomy, The University of Tennessee, Knoxville, Tennessee 37996, USA
| | - Hanno H Weitering
- Department of Physics and Astronomy, The University of Tennessee, Knoxville, Tennessee 37996, USA
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5
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Chen FC, Fei Y, Li SJ, Wang Q, Luo X, Yan J, Lu WJ, Tong P, Song WH, Zhu XB, Zhang L, Zhou HB, Zheng FW, Zhang P, Lichtenstein AL, Katsnelson MI, Yin Y, Hao N, Sun YP. Temperature-Induced Lifshitz Transition and Possible Excitonic Instability in ZrSiSe. PHYSICAL REVIEW LETTERS 2020; 124:236601. [PMID: 32603145 DOI: 10.1103/physrevlett.124.236601] [Citation(s) in RCA: 10] [Impact Index Per Article: 2.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/04/2019] [Revised: 04/06/2020] [Accepted: 05/22/2020] [Indexed: 06/11/2023]
Abstract
The nodal-line semimetals have attracted immense interest due to the unique electronic structures such as the linear dispersion and the vanishing density of states as the Fermi energy approaching the nodes. Here, we report temperature-dependent transport and scanning tunneling microscopy (spectroscopy) [STM(S)] measurements on nodal-line semimetal ZrSiSe. Our experimental results and theoretical analyses consistently demonstrate that the temperature induces Lifshitz transitions at 80 and 106 K in ZrSiSe, which results in the transport anomalies at the same temperatures. More strikingly, we observe a V-shaped dip structure around Fermi energy from the STS spectrum at low temperature, which can be attributed to co-effect of the spin-orbit coupling and excitonic instability. Our observations indicate the correlation interaction may play an important role in ZrSiSe, which owns the quasi-two-dimensional electronic structures.
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Affiliation(s)
- F C Chen
- Key Laboratory of Materials Physics, Institute of Solid State Physics, HFIPS, Chinese Academy of Sciences, Hefei 230031, China
- University of Science and Technology of China, Hefei 230026, China
| | - Y Fei
- Department of Physics, Zhejiang University, Hangzhou 310027, China
| | - S J Li
- Institute of Applied Physics and Computational Mathematics, Beijing 100088, China
- Anhui Province Key Laboratory of Condensed Matter Physics at Extreme Conditions, High Magnetic Field Laboratory, HFIPS, Chinese Academy of Sciences, Hefei 230031, China
- College of Mathematics and Physics, Beijing University of Chemical Technology, Beijing 100029, China
| | - Q Wang
- University of Science and Technology of China, Hefei 230026, China
- Anhui Province Key Laboratory of Condensed Matter Physics at Extreme Conditions, High Magnetic Field Laboratory, HFIPS, Chinese Academy of Sciences, Hefei 230031, China
| | - X Luo
- Key Laboratory of Materials Physics, Institute of Solid State Physics, HFIPS, Chinese Academy of Sciences, Hefei 230031, China
| | - J Yan
- Key Laboratory of Materials Physics, Institute of Solid State Physics, HFIPS, Chinese Academy of Sciences, Hefei 230031, China
- University of Science and Technology of China, Hefei 230026, China
| | - W J Lu
- Key Laboratory of Materials Physics, Institute of Solid State Physics, HFIPS, Chinese Academy of Sciences, Hefei 230031, China
| | - P Tong
- Key Laboratory of Materials Physics, Institute of Solid State Physics, HFIPS, Chinese Academy of Sciences, Hefei 230031, China
| | - W H Song
- Key Laboratory of Materials Physics, Institute of Solid State Physics, HFIPS, Chinese Academy of Sciences, Hefei 230031, China
| | - X B Zhu
- Key Laboratory of Materials Physics, Institute of Solid State Physics, HFIPS, Chinese Academy of Sciences, Hefei 230031, China
| | - L Zhang
- Anhui Province Key Laboratory of Condensed Matter Physics at Extreme Conditions, High Magnetic Field Laboratory, HFIPS, Chinese Academy of Sciences, Hefei 230031, China
| | - H B Zhou
- Anhui Province Key Laboratory of Condensed Matter Physics at Extreme Conditions, High Magnetic Field Laboratory, HFIPS, Chinese Academy of Sciences, Hefei 230031, China
| | - F W Zheng
- Institute of Applied Physics and Computational Mathematics, Beijing 100088, China
| | - P Zhang
- Institute of Applied Physics and Computational Mathematics, Beijing 100088, China
- School of Physics and Physical Engineering, Qufu Normal University, Qufu 273165, China
| | - A L Lichtenstein
- Institute for Theoretical Physics, University Hamburg, Jungiusstrasse 9, D-20355 Hamburg, Germany
- Theoretical Physics and Applied Mathematics Department, Ural Federal University, Mira Street 19, 620002 Ekaterinburg, Russia
| | - M I Katsnelson
- Theoretical Physics and Applied Mathematics Department, Ural Federal University, Mira Street 19, 620002 Ekaterinburg, Russia
- Institute for Molecules and Materials, Radboud University, Heijendaalseweg 135, NL-6525AJ Nijmegen, The Netherlands
| | - Y Yin
- Department of Physics, Zhejiang University, Hangzhou 310027, China
- Collaborative Innovation Center of Microstructures, Nanjing University, Nanjing 210093, China
| | - Ning Hao
- Anhui Province Key Laboratory of Condensed Matter Physics at Extreme Conditions, High Magnetic Field Laboratory, HFIPS, Chinese Academy of Sciences, Hefei 230031, China
| | - Y P Sun
- Key Laboratory of Materials Physics, Institute of Solid State Physics, HFIPS, Chinese Academy of Sciences, Hefei 230031, China
- Anhui Province Key Laboratory of Condensed Matter Physics at Extreme Conditions, High Magnetic Field Laboratory, HFIPS, Chinese Academy of Sciences, Hefei 230031, China
- Collaborative Innovation Center of Microstructures, Nanjing University, Nanjing 210093, China
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6
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Kurashima K, Adachi T, Suzuki KM, Fukunaga Y, Kawamata T, Noji T, Miyasaka H, Watanabe I, Miyazaki M, Koda A, Kadono R, Koike Y. Development of Ferromagnetic Fluctuations in Heavily Overdoped (Bi,Pb)_{2}Sr_{2}CuO_{6+δ} Copper Oxides. PHYSICAL REVIEW LETTERS 2018; 121:057002. [PMID: 30118284 DOI: 10.1103/physrevlett.121.057002] [Citation(s) in RCA: 5] [Impact Index Per Article: 0.8] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/07/2017] [Indexed: 06/08/2023]
Abstract
We demonstrate the presence of ferromagnetic (FM) fluctuations in the superconducting and nonsuperconducting heavily overdoped regimes of high-temperature superconducting copper oxides, using (Bi,Pb)_{2}Sr_{2}CuO_{6+δ} (Bi-2201) single crystals. Magnetization curves exhibit a tendency to be saturated in high magnetic fields at low temperatures in the heavily overdoped crystals, which is probably a precursor phenomenon of a FM transition at a lower temperature. Muon spin relaxation detects the enhancement of spin fluctuations at high temperatures below 200 K. Correspondingly, the ab-plane resistivity follows a 4/3 power law in a wide temperature range, which is characteristic of metals with two-dimensional FM fluctuations due to itinerant electrons. As the Wilson ratio evidences the enhancement of spin fluctuations with hole doping in the heavily overdoped regime, it is concluded that two-dimensional FM fluctuations reside in the heavily overdoped Bi-2201 cuprates, which is probably related to the decrease in the superconducting transition temperature in the heavily overdoped cuprates.
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Affiliation(s)
- Koshi Kurashima
- Department of Applied Physics, Tohoku University, 6-6-05 Aoba, Aramaki, Sendai 980-8579, Japan
| | - Tadashi Adachi
- Department of Engineering and Applied Sciences, Sophia University, 7-1 Kioi-cho, Chiyoda-ku, Tokyo 102-8554, Japan
| | - Kensuke M Suzuki
- Institute for Materials Research, Tohoku University, 2-1-1 Katahira, Sendai 980-8577, Japan
| | - Yasushi Fukunaga
- Department of Applied Physics, Tohoku University, 6-6-05 Aoba, Aramaki, Sendai 980-8579, Japan
| | - Takayuki Kawamata
- Department of Applied Physics, Tohoku University, 6-6-05 Aoba, Aramaki, Sendai 980-8579, Japan
| | - Takashi Noji
- Department of Applied Physics, Tohoku University, 6-6-05 Aoba, Aramaki, Sendai 980-8579, Japan
| | - Hitoshi Miyasaka
- Institute for Materials Research, Tohoku University, 2-1-1 Katahira, Sendai 980-8577, Japan
- Department of Chemistry, Tohoku University, 6-3 Aoba, Aramaki, Sendai 980-8578, Japan
| | - Isao Watanabe
- Meson Science Laboratory, Nishina Center for Accelerator-Based Science, RIKEN, 2-1 Hirosawa, Wako 351-0198, Japan
| | - Masanori Miyazaki
- Graduate School of Engineering, Muroran Institute of Technology, 27-1 Mizumoto, Muroran 050-8585, Japan
| | - Akihiro Koda
- Institute of Materials Structure Science, High Energy Accelerator Research Organization (KEK-IMSS), 1-1 Oho, Tsukuba 305-0801, Japan
| | - Ryosuke Kadono
- Institute of Materials Structure Science, High Energy Accelerator Research Organization (KEK-IMSS), 1-1 Oho, Tsukuba 305-0801, Japan
| | - Yoji Koike
- Department of Applied Physics, Tohoku University, 6-6-05 Aoba, Aramaki, Sendai 980-8579, Japan
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7
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Zhang J, Ding Y, Chen CC, Cai Z, Chang J, Chen B, Hong X, Fluerasu A, Zhang Y, Ku CS, Brewe D, Heald S, Ishii H, Hiraoka N, Tsuei KD, Liu W, Zhang Z, Cai YQ, Gu G, Irifune T, Mao HK. Evolution of a Novel Ribbon Phase in Optimally Doped Bi 2Sr 2CaCu 2O 8+δ at High Pressure and Its Implication to High- T C Superconductivity. J Phys Chem Lett 2018; 9:4182-4188. [PMID: 29979596 DOI: 10.1021/acs.jpclett.8b01849] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 06/08/2023]
Abstract
One challenge in studying high-temperature superconductivity (HTSC) stems from a lack of direct experimental evidence linking lattice inhomogeneity and superconductivity. Here, we apply synchrotron hard X-ray nanoimaging and small-angle scattering to reveal a novel micron-scaled ribbon phase in optimally doped Bi2Sr2CaCu2O8+δ (Bi-2212, with δ = 0.1). The morphology of the ribbon-like phase evolves simultaneously with the dome-shaped TC behavior under pressure. X-ray absorption studies show that the increasing of TC is associated with oxygen-hole redistribution in the CuO2 plan, while TC starts to decrease with pressure when oxygen holes become immobile. Additional X-ray irradiation experiments reveal that nanoscaled short-range ordering of oxygen vacancies could further lower TC, which indicates that the optimal TC is affected not only by an optimal morphology of the ribbon phase, but also an optimal distribution of oxygen vacancies. Our studies thereby provide for the first time compelling experimental evidence correlating the TC with micron to nanoscale inhomogeneity.
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Affiliation(s)
- Jianbo Zhang
- Center for High-Pressure Science & Technology Advanced Research , Beijing , 100094 , People's Republic of China
| | - Yang Ding
- Center for High-Pressure Science & Technology Advanced Research , Beijing , 100094 , People's Republic of China
| | - Cheng-Chien Chen
- Department of Physics , University of Alabama at Birmingham , Birmingham , Alabama 35294 , United States
| | - Zhonghou Cai
- Advanced Photon Source , Argonne National Laboratory , Argonne , Illinois 60439 , United States
| | - Jun Chang
- College of Physics and Information Technology , Shaanxi Normal University , Xi'an 710119 , People's Republic of China
| | - Bijuan Chen
- Center for High-Pressure Science & Technology Advanced Research , Beijing , 100094 , People's Republic of China
| | - Xinguo Hong
- Center for High-Pressure Science & Technology Advanced Research , Beijing , 100094 , People's Republic of China
| | - Andrei Fluerasu
- National Synchrotron Light Source II , Brookhaven National Laboratory , Upton , New York 11973 , United States
| | - Yugang Zhang
- National Synchrotron Light Source II , Brookhaven National Laboratory , Upton , New York 11973 , United States
| | - Ching-Shun Ku
- National Synchrotron Radiation Research Center , Hsinchu 30076 , Taiwan
| | - Dale Brewe
- Advanced Photon Source , Argonne National Laboratory , Argonne , Illinois 60439 , United States
| | - Steve Heald
- Advanced Photon Source , Argonne National Laboratory , Argonne , Illinois 60439 , United States
| | - Hirofumi Ishii
- National Synchrotron Radiation Research Center , Hsinchu 30076 , Taiwan
| | - Nozomu Hiraoka
- National Synchrotron Radiation Research Center , Hsinchu 30076 , Taiwan
| | - Ku-Ding Tsuei
- National Synchrotron Radiation Research Center , Hsinchu 30076 , Taiwan
| | - Wenjun Liu
- Advanced Photon Source , Argonne National Laboratory , Argonne , Illinois 60439 , United States
| | - Zhan Zhang
- Advanced Photon Source , Argonne National Laboratory , Argonne , Illinois 60439 , United States
| | - Yong Q Cai
- National Synchrotron Light Source II , Brookhaven National Laboratory , Upton , New York 11973 , United States
| | - Genda Gu
- Condensed Matter Physics and Materials Science Department , Brookhaven National Laboratory , Upton , New York 11973 , United States
| | - Tetsuo Irifune
- Geodynamics Research Center , Ehime University , 2-5 Bunkyo-cho , Matsuyama 790-8577 , Japan
- Earth-Life Science Institute , Tokyo Institute of Technology , Tokyo 152-8500 , Japan
| | - Ho-Kwang Mao
- Center for High-Pressure Science & Technology Advanced Research , Beijing , 100094 , People's Republic of China
- Geophysical Laboratory , Carnegie Institution of Washington , Washington, D.C. 20015 , United States
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8
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Bragança H, Sakai S, Aguiar MCO, Civelli M. Correlation-Driven Lifshitz Transition at the Emergence of the Pseudogap Phase in the Two-Dimensional Hubbard Model. PHYSICAL REVIEW LETTERS 2018; 120:067002. [PMID: 29481286 DOI: 10.1103/physrevlett.120.067002] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/05/2017] [Indexed: 06/08/2023]
Abstract
We study the relationship between the pseudogap and Fermi-surface topology in the two-dimensional Hubbard model by means of the cellular dynamical mean-field theory. We find two possible mean-field metallic solutions on a broad range of interactions, doping, and frustration: a conventional renormalized metal and an unconventional pseudogap metal. At half filling, the conventional metal is more stable and displays an interaction-driven Mott metal-insulator transition. However, for large interactions and small doping, a region that is relevant for cuprates, the pseudogap phase becomes the ground state. By increasing doping, we show that a first-order transition from the pseudogap to the conventional metal is tied to a change of the Fermi surface from hole- to electronlike, unveiling a correlation-driven mechanism for a Lifshitz transition. This explains the puzzling link between the pseudogap phase and Fermi surface topology that has been pointed out in recent experiments.
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Affiliation(s)
- Helena Bragança
- Departamento de Física, Universidade Federal de Minas Gerais, C. P. 702, 30123-970 Belo Horizonte, Minas Gerais, Brazil
- Laboratoire de Physique des Solides, CNRS UMR 8502, Univ. Paris-Sud, Université Paris-Saclay F-91405 Orsay Cedex, France
| | - Shiro Sakai
- Center for Emergent Matter Science, RIKEN, Wako, Saitama 351-0198, Japan
| | - M C O Aguiar
- Departamento de Física, Universidade Federal de Minas Gerais, C. P. 702, 30123-970 Belo Horizonte, Minas Gerais, Brazil
| | - Marcello Civelli
- Laboratoire de Physique des Solides, CNRS UMR 8502, Univ. Paris-Sud, Université Paris-Saclay F-91405 Orsay Cedex, France
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9
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Ming F, Johnston S, Mulugeta D, Smith TS, Vilmercati P, Lee G, Maier TA, Snijders PC, Weitering HH. Realization of a Hole-Doped Mott Insulator on a Triangular Silicon Lattice. PHYSICAL REVIEW LETTERS 2017; 119:266802. [PMID: 29328725 DOI: 10.1103/physrevlett.119.266802] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.1] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/15/2017] [Indexed: 06/07/2023]
Abstract
The physics of doped Mott insulators is at the heart of some of the most exotic physical phenomena in materials research including insulator-metal transitions, colossal magnetoresistance, and high-temperature superconductivity in layered perovskite compounds. Advances in this field would greatly benefit from the availability of new material systems with a similar richness of physical phenomena but with fewer chemical and structural complications in comparison to oxides. Using scanning tunneling microscopy and spectroscopy, we show that such a system can be realized on a silicon platform. The adsorption of one-third monolayer of Sn atoms on a Si(111) surface produces a triangular surface lattice with half filled dangling bond orbitals. Modulation hole doping of these dangling bonds unveils clear hallmarks of Mott physics, such as spectral weight transfer and the formation of quasiparticle states at the Fermi level, well-defined Fermi contour segments, and a sharp singularity in the density of states. These observations are remarkably similar to those made in complex oxide materials, including high-temperature superconductors, but highly extraordinary within the realm of conventional sp-bonded semiconductor materials. It suggests that exotic quantum matter phases can be realized and engineered on silicon-based materials platforms.
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Affiliation(s)
- Fangfei Ming
- Department of Physics and Astronomy, The University of Tennessee, Knoxville, Tennessee 37996, USA
| | - Steve Johnston
- Department of Physics and Astronomy, The University of Tennessee, Knoxville, Tennessee 37996, USA
- Joint Institute of Advanced Materials at The University of Tennessee, Knoxville, Tennessee 37996, USA
| | - Daniel Mulugeta
- Department of Physics and Astronomy, The University of Tennessee, Knoxville, Tennessee 37996, USA
| | - Tyler S Smith
- Department of Physics and Astronomy, The University of Tennessee, Knoxville, Tennessee 37996, USA
| | - Paolo Vilmercati
- Department of Physics and Astronomy, The University of Tennessee, Knoxville, Tennessee 37996, USA
- Joint Institute of Advanced Materials at The University of Tennessee, Knoxville, Tennessee 37996, USA
| | - Geunseop Lee
- Department of Physics, Inha University, Inchon 402-751, Korea
| | - Thomas A Maier
- Computational Science and Engineering Division and Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831, USA
| | - Paul C Snijders
- Department of Physics and Astronomy, The University of Tennessee, Knoxville, Tennessee 37996, USA
- Materials Science and Technology Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831, USA
| | - Hanno H Weitering
- Department of Physics and Astronomy, The University of Tennessee, Knoxville, Tennessee 37996, USA
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10
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The study of electronic nematicity in an overdoped (Bi, Pb) 2Sr 2CuO 6+δ superconductor using scanning tunneling spectroscopy. Sci Rep 2017; 7:8059. [PMID: 28808301 PMCID: PMC5556024 DOI: 10.1038/s41598-017-08376-1] [Citation(s) in RCA: 13] [Impact Index Per Article: 1.9] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 07/28/2016] [Accepted: 07/12/2017] [Indexed: 11/08/2022] Open
Abstract
The pseudogap (PG) state and its related intra-unit-cell symmetry breaking remain the focus in the research of cuprate superconductors. Although the nematicity has been studied in Bi2Sr2CaCu2O8+δ, especially underdoped samples, its behavior in other cuprates and different doping regions is still unclear. Here we apply a scanning tunneling microscope to explore an overdoped (Bi, Pb)2Sr2CuO6+δ with a large Fermi surface (FS). The establishment of a nematic order and its real-space distribution is visualized as the energy scale approaches the PG.
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11
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Entropic Origin of Pseudogap Physics and a Mott-Slater Transition in Cuprates. Sci Rep 2017; 7:44008. [PMID: 28327627 PMCID: PMC5361159 DOI: 10.1038/srep44008] [Citation(s) in RCA: 12] [Impact Index Per Article: 1.7] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 07/22/2016] [Accepted: 02/02/2017] [Indexed: 11/30/2022] Open
Abstract
We propose a new approach to understand the origin of the pseudogap in the cuprates, in terms of bosonic entropy. The near-simultaneous softening of a large number of different q-bosons yields an extended range of short-range order, wherein the growth of magnetic correlations with decreasing temperature T is anomalously slow. These entropic effects cause the spectral weight associated with the Van Hove singularity (VHS) to shift rapidly and nearly linearly toward half filling at higher T, consistent with a picture of the VHS driving the pseudogap transition at a temperature ~T*. As a byproduct, we develop an order-parameter classification scheme that predicts supertransitions between families of order parameters. As one example, we find that by tuning the hopping parameters, it is possible to drive the cuprates across a transition between Mott and Slater physics, where a spin-frustrated state emerges at the crossover.
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12
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Lv YF, Wang WL, Peng JP, Ding H, Wang Y, Wang L, He K, Ji SH, Zhong R, Schneeloch J, Gu GD, Song CL, Ma XC, Xue QK. Mapping the Electronic Structure of Each Ingredient Oxide Layer of High-T\{c} Cuprate Superconductor Bi{2}Sr{2}CaCu{2}O{8+δ}. PHYSICAL REVIEW LETTERS 2015; 115:237002. [PMID: 26684137 DOI: 10.1103/physrevlett.115.237002] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/29/2015] [Indexed: 06/05/2023]
Abstract
Understanding the mechanism of high transition temperature (T{c}) superconductivity in cuprates has been hindered by the apparent complexity of their multilayered crystal structure. Using a cryogenic scanning tunneling microscopy (STM), we report on layer-by-layer probing of the electronic structures of all ingredient planes (BiO, SrO, CuO{2}) of Bi{2}Sr{2}CaCu_2}O{8+δ} superconductor prepared by argon-ion bombardment and annealing technique. We show that the well-known pseudogap (PG) feature observed by STM is inherently a property of the BiO planes and thus irrelevant directly to Cooper pairing. The SrO planes exhibit an unexpected van Hove singularity near the Fermi level, while the CuO{2} planes are exclusively characterized by a smaller gap inside the PG. The small gap becomes invisible near T{c}, which we identify as the superconducting gap. The above results constitute severe constraints on any microscopic model for high T{c} superconductivity in cuprates.
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Affiliation(s)
- Yan-Feng Lv
- State Key Laboratory of Low-Dimensional Quantum Physics, Department of Physics, Tsinghua University, Beijing 100084, China
| | - Wen-Lin Wang
- State Key Laboratory of Low-Dimensional Quantum Physics, Department of Physics, Tsinghua University, Beijing 100084, China
| | - Jun-Ping Peng
- State Key Laboratory of Low-Dimensional Quantum Physics, Department of Physics, Tsinghua University, Beijing 100084, China
| | - Hao Ding
- State Key Laboratory of Low-Dimensional Quantum Physics, Department of Physics, Tsinghua University, Beijing 100084, China
| | - Yang Wang
- State Key Laboratory of Low-Dimensional Quantum Physics, Department of Physics, Tsinghua University, Beijing 100084, China
| | - Lili Wang
- State Key Laboratory of Low-Dimensional Quantum Physics, Department of Physics, Tsinghua University, Beijing 100084, China
- Collaborative Innovation Center of Quantum Matter, Beijing 100084, China
| | - Ke He
- State Key Laboratory of Low-Dimensional Quantum Physics, Department of Physics, Tsinghua University, Beijing 100084, China
- Collaborative Innovation Center of Quantum Matter, Beijing 100084, China
| | - Shuai-Hua Ji
- State Key Laboratory of Low-Dimensional Quantum Physics, Department of Physics, Tsinghua University, Beijing 100084, China
- Collaborative Innovation Center of Quantum Matter, Beijing 100084, China
| | - Ruidan Zhong
- Condensed Matter Physics and Materials Science Department, Brookhaven National Laboratory, Upton, New York 11973, USA
| | - John Schneeloch
- Condensed Matter Physics and Materials Science Department, Brookhaven National Laboratory, Upton, New York 11973, USA
| | - Gen-Da Gu
- Condensed Matter Physics and Materials Science Department, Brookhaven National Laboratory, Upton, New York 11973, USA
| | - Can-Li Song
- State Key Laboratory of Low-Dimensional Quantum Physics, Department of Physics, Tsinghua University, Beijing 100084, China
- Collaborative Innovation Center of Quantum Matter, Beijing 100084, China
| | - Xu-Cun Ma
- State Key Laboratory of Low-Dimensional Quantum Physics, Department of Physics, Tsinghua University, Beijing 100084, China
- Collaborative Innovation Center of Quantum Matter, Beijing 100084, China
| | - Qi-Kun Xue
- State Key Laboratory of Low-Dimensional Quantum Physics, Department of Physics, Tsinghua University, Beijing 100084, China
- Collaborative Innovation Center of Quantum Matter, Beijing 100084, China
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13
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Mistark P, Hafiz H, Markiewicz RS, Bansil A. Fermi-surface-free superconductivity in underdoped (Bi,Pb)(Sr,La)2CuO(6+δ) (Bi2201). Sci Rep 2015; 5:9739. [PMID: 26084605 PMCID: PMC4471721 DOI: 10.1038/srep09739] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 02/06/2014] [Accepted: 03/12/2015] [Indexed: 12/05/2022] Open
Abstract
Fermi-surface-free superconductivity arises when the superconducting order pulls down spectral weight from a band that is completely above the Fermi energy in the normal state. We show that this can arise in hole-doped cuprates when a competing order causes a reconstruction of the Fermi surface. The change in Fermi surface topology is accompanied by a characteristic rise in the spectral weight. Our results support the presence of a trisected superconducting dome, and suggest that superconductivity is responsible for stabilizing the (π,π) magnetic order at higher doping.
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Affiliation(s)
- Peter Mistark
- Department of Physics, Northeastern University, Boston
| | - Hasnain Hafiz
- Department of Physics, Northeastern University, Boston
| | | | - Arun Bansil
- Department of Physics, Northeastern University, Boston
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14
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Benhabib S, Sacuto A, Civelli M, Paul I, Cazayous M, Gallais Y, Méasson MA, Zhong RD, Schneeloch J, Gu GD, Colson D, Forget A. Collapse of the normal-state pseudogap at a Lifshitz transition in the Bi(2)Sr(2)CaCu(2)O(8+δ) cuprate superconductor. PHYSICAL REVIEW LETTERS 2015; 114:147001. [PMID: 25910152 DOI: 10.1103/physrevlett.114.147001] [Citation(s) in RCA: 8] [Impact Index Per Article: 0.9] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/21/2014] [Indexed: 06/04/2023]
Abstract
We report a fine tuned doping study of strongly overdoped Bi_{2}Sr_{2}CaCu_{2}O_{8+δ} single crystals using electronic Raman scattering. Combined with theoretical calculations, we show that the doping, at which the normal-state pseudogap closes, coincides with a Lifshitz quantum phase transition where the active holelike Fermi surface becomes electronlike. This conclusion suggests that the microscopic cause of the pseudogap is sensitive to the Fermi surface topology. Furthermore, we find that the superconducting transition temperature is unaffected by this transition, demonstrating that their origins are different on the overdoped side.
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Affiliation(s)
- S Benhabib
- Laboratoire Matériaux et Phénomènes Quantiques (UMR 7162 CNRS), Université Paris Diderot-Paris 7, Bâtiment Condorcet, 75205 Paris Cedex 13, France
| | - A Sacuto
- Laboratoire Matériaux et Phénomènes Quantiques (UMR 7162 CNRS), Université Paris Diderot-Paris 7, Bâtiment Condorcet, 75205 Paris Cedex 13, France
| | - M Civelli
- Laboratoire de Physique des Solides, UMR 8502 CNRS, Université Paris Sud, Bâtiment 510, 91405 Orsay Cedex, France
| | - I Paul
- Laboratoire Matériaux et Phénomènes Quantiques (UMR 7162 CNRS), Université Paris Diderot-Paris 7, Bâtiment Condorcet, 75205 Paris Cedex 13, France
| | - M Cazayous
- Laboratoire Matériaux et Phénomènes Quantiques (UMR 7162 CNRS), Université Paris Diderot-Paris 7, Bâtiment Condorcet, 75205 Paris Cedex 13, France
| | - Y Gallais
- Laboratoire Matériaux et Phénomènes Quantiques (UMR 7162 CNRS), Université Paris Diderot-Paris 7, Bâtiment Condorcet, 75205 Paris Cedex 13, France
| | - M-A Méasson
- Laboratoire Matériaux et Phénomènes Quantiques (UMR 7162 CNRS), Université Paris Diderot-Paris 7, Bâtiment Condorcet, 75205 Paris Cedex 13, France
| | - R D Zhong
- Matter Physics and Materials Science, Brookhaven National Laboratory (BNL), Upton, New York 11973, USA
| | - J Schneeloch
- Matter Physics and Materials Science, Brookhaven National Laboratory (BNL), Upton, New York 11973, USA
| | - G D Gu
- Matter Physics and Materials Science, Brookhaven National Laboratory (BNL), Upton, New York 11973, USA
| | - D Colson
- Service de Physique de l'Etat Condensé, CEA-Saclay, 91191 Gif-sur-Yvette, France
| | - A Forget
- Service de Physique de l'Etat Condensé, CEA-Saclay, 91191 Gif-sur-Yvette, France
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15
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Weak antilocalization effect and noncentrosymmetric superconductivity in a topologically nontrivial semimetal LuPdBi. Sci Rep 2014; 4:5709. [PMID: 25043549 PMCID: PMC4104393 DOI: 10.1038/srep05709] [Citation(s) in RCA: 91] [Impact Index Per Article: 9.1] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 03/21/2014] [Accepted: 06/27/2014] [Indexed: 11/13/2022] Open
Abstract
A large number of half-Heusler compounds have been recently proposed as three-dimensional (3D) topological insulators (TIs) with tunable physical properties. However, no transport measurements associated with the topological surface states have been observed in these half-Heusler candidates due to the dominating contribution from bulk electrical conductance. Here we show that, by reducing the mobility of bulk carriers, a two-dimensional (2D) weak antilocalization (WAL) effect, one of the hallmarks of topological surface states, was experimentally revealed from the tilted magnetic field dependence of magnetoconductance in a topologically nontrivial semimetal LuPdBi. Besides the observation of a 2D WAL effect, a superconducting transition was revealed at Tc ~ 1.7 K in the same bulk LuPdBi. Quantitative analysis within the framework of a generalized BCS theory leads to the conclusion that the noncentrosymmetric superconductivity of LuPdBi is fully gapped with a possibly unconventional pairing character. The co-existence of superconductivity and the transport signature of topological surface states in the same bulk alloy suggests that LuPdBi represents a very promising candidate as a topological superconductor.
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