Interplay of Dirac electrons and magnetism in CaMnBi2 and SrMnBi2

Robust magnetism and crystal structure in Dirac semimetal EuMnBi2under high pressure

Dirac materials offer exciting opportunities to explore low-energy carrier dynamics and novel physical phenomena, especially their interaction with magnetism. In this context, this work focuses on studies of pressure control on the magnetic state of EuMnBi2, a representative magnetic Dirac semimetal, through time-domain synchrotron Mössbauer spectroscopy in151Eu. Contrary to the previous report that the antiferromagnetic order is suppressed by pressure above 4 GPa, we have observed robust magnetic order up to 33.1 GPa. Synchrotron-based x-ray diffraction experiment on a pure EuMnBi2sample shows that the tetragonal crystal lattice remains stable up to at least 31.7 GPa.

Electronic structure and layer-dependent magnetic order of a new high-mobility layered antiferromagnet KMnBi

Room-temperature two-dimensional antiferromagnetic (AFM) materials are highly desirable for various device applications. In this letter, we report the low-energy electronic structure of KMnBi measured by angle-resolved photoemission spectroscopy, which confirms an AFM ground state with the valence band maximum located at -100 meV below the Fermi level and small hole effective masses associated with the sharp band dispersion. Using complementary Raman, atomic force microscope and electric transport measurement, we systematically study the evolution of electric transport characteristics of micro-mechanically exfoliated KMnBi with varied flake thicknesses, which all consistently reveal the existence of a probable AFM ground state down to the quintuple-layer regime. The AFM phase transition temperature ranges from 220 K to 275 K, depending on the thickness. Our results suggest that with proper device encapsulation, multilayer KMnBi is indeed a promising 2D AFM platform for testing various theoretical proposals for device applications.

Discovery of a Magnetic Dirac System with a Large Intrinsic Nonlinear Hall Effect

Magnetic materials exhibiting topological Dirac fermions are attracting significant attention for their promising technological potential in spintronics. In these systems, the combined effect of the spin-orbit coupling and magnetic order enables the realization of novel topological phases with exotic transport properties, including the anomalous Hall effect and magneto-chiral phenomena. Herein, we report experimental signature of topological Dirac antiferromagnetism in TaCoTe₂ via angle-resolved photoelectron spectroscopy and first-principles density functional theory calculations. In particular, we find the existence of spin-orbit coupling-induced gaps at the Fermi level, consistent with the manifestation of a large intrinsic nonlinear Hall conductivity. Remarkably, we find that the latter is extremely sensitive to the orientation of the Néel vector, suggesting TaCoTe₂ as a suitable candidate for the realization of non-volatile spintronic devices with an unprecedented level of intrinsic tunability.

Giant Negative Magnetoresistance beyond Chiral Anomaly in Topological Material YCuAs2

The large negative magnetoresistance (MR) effect, which usually emerges in various magnetic systems, is a technologically important property for spintronics. Recently, the so-called "chiral anomaly" in topological semimetals offers an alternative to generate a considerable negative MR effect without utilizing magnetism. However, it requires that the applied magnetic field must be strictly along the electric current direction, which sets a strong limit for practical applications. Here, a giant negative MR effect is discovered with a value of up to -40% in 9 T at 2 K in the nonmagnetic Dirac material YCuAs₂ , which is not restricted to the specific configuration for applied magnetic fields. Based on magnetic susceptibility and NMR measurements, the giant negative MR effect is tightly connected with the unexpected spin-dependent scattering from vacancy-induced local moments, which is also beyond the classical Kondo effect. The present work not only offers an alternative route for spintronics based on nonmagnetic topological materials, but also helps to further understand the negative MR effect in topological materials.

Drug Resistance and Epigenetic Modulatory Potential of Epigallocatechin-3-Gallate Against Staphylococcus aureus

Antimicrobial resistance of human pathogens, such as methicillin-resistant Staphylococcus aureus, is described by the World Health Organization as a health global challenge and efforts must be made for the discovery of new effective and safe compounds. This work aims to evaluate epigallocatechin-3-gallate (EGCG) epigenetic and modulatory drug potential against S. aureus in vitro and in vivo. S. aureus strains were isolated from commensal flora of healthy volunteers. Antibiotic susceptibility and synergistic assay were assessed through disk diffusion accordingly to EUCAST guidelines with and without co-exposure to EGCG at final concentrations of 250 µg/ml, 100 µg/ml, 50 µg/ml, and 25 µg/ml. Transcriptional expression of orfx, spdC, and WalKR was performed through qRT-PCR. A 90-day interventional study was performed with daily consumption of 225 mg of EGCG. Obtained data revealed a high prevalence of S. aureus colonization in healthcare workers and clearly demonstrated the antimicrobial and synergistic potential of EGCG as well as divergent resistant phenotypes associated with altered transcriptional expression of epigenetic and drug response modulators genes. Here, we demonstrate the potential of EGCG for antimicrobial treatment and/or therapeutic adjuvant against antibiotic-resistant microorganisms and report divergent patterns of epigenetic modulators expression associated with phenotypic resistance profiles.

Microglia at the Centre of Brain Research: Accomplishments and Challenges for the Future

Microglia are the immune guardians of the central nervous system (CNS), with critical functions in development, maintenance of homeostatic tissue balance, injury and repair. For a long time considered a forgotten 'third element' with basic phagocytic functions, a recent surge in interest, accompanied by technological progress, has demonstrated that these distinct myeloid cells have a wide-ranging importance for brain function. This review reports microglial origins, development, and function in the healthy brain. Moreover, it also targets microglia dysfunction and how it contributes to the progression of several neurological disorders, focusing on particular molecular mechanisms and whether these may present themselves as opportunities for novel, microglia-targeted therapeutic approaches, an ever-enticing prospect. Finally, as it has been recently celebrated 100 years of microglia research, the review highlights key landmarks from the past century and looked into the future. Many challenging problems have arisen, thus it points out some of the most pressing questions and experimental challenges for the ensuing century.

Double-bowl state in photonic Dirac nodal line semimetal

The past decade has seen a proliferation of topological materials for both insulators and semimetals in electronic systems and classical waves. Topological semimetals exhibit topologically protected band degeneracies, such as nodal points and nodal lines. Dirac nodal line semimetals (DNLS), which own four-fold line degeneracy, have drawn particular attention. DNLSs have been studied in electronic systems but there is no photonic DNLS. Here in this work, we provide a new mechanism, which is unique for photonic systems to investigate a stringent photonic DNLS. When truncated, the photonic DNLS exhibits double-bowl states (DBS), which comprise two sets of perpendicularly polarized surface states. In sharp contrast to nondegenerate surface states in other photonic systems, here the two sets of surface states are almost degenerate over the whole-spectrum range. The DBS and the bulk Dirac nodal ring (DNR) dispersion along the relevant directions, are experimentally resolved.

Thermoelectric Properties of Novel Semimetals: A Case Study of YbMnSb2

The emerging class of topological materials provides a platform to engineer exotic electronic structures for a variety of applications. As complex band structures and Fermi surfaces can directly benefit thermoelectric performance it is important to identify the role of featured topological bands in thermoelectrics particularly when there are coexisting classic regular bands. In this work, the contribution of Dirac bands to thermoelectric performance and their ability to concurrently achieve large thermopower and low resistivity in novel semimetals is investigated. By examining the YbMnSb₂ nodal line semimetal as an example, the Dirac bands appear to provide a low resistivity along the direction in which they are highly dispersive. Moreover, because of the regular-band-provided density of states, a large Seebeck coefficient over 160 µV K^-1 at 300 K is achieved in both directions, which is very high for a semimetal with high carrier concentration. The combined highly dispersive Dirac and regular bands lead to ten times increase in power factor, reaching a value of 2.1 mW m^-1 K^-2 at 300 K. The present work highlights the potential of such novel semimetals for unusual electronic transport properties and guides strategies towards high thermoelectric performance.

Spin-Canting-Induced Band Reconstruction in the Dirac Material Ca_{1-x}Na_{x}MnBi_{2}

The ternary AMnBi_{2} (A is alkaline as well as rare-earth atom) materials provide an arena for investigating the interplay between low-dimensional magnetism of the antiferromagnetic MnBi layers and the electronic states in the intercalated Bi layers, which harbor relativistic fermions. Here, we report on a comprehensive study of the optical properties and magnetic torque response of Ca_{1-x}Na_{x}MnBi_{2}. Our findings give evidence for a spin canting occurring at T_{s}∼50-100  K. With the support of first-principles calculations we establish a direct link between the spin canting and the reconstruction of the electronic band structure, having immediate implications for the spectral weight reshuffling in the optical response, signaling a partial gapping of the Fermi surface, and the dc transport properties below T_{s}.

Pressure-Induced Large Volume Collapse, Plane-to-Chain, Insulator to Metal Transition in CaMn2Bi2

In situ high pressure single crystal X-ray diffraction study reveals that the quantum material CaMn₂Bi₂ undergoes a unique plane to chain structural transition between 2 and 3 GPa, accompanied by a large volume collapse. Puckered Mn-Mn honeycomb layer converts to quasi-one-dimensional (1D) zigzag chains above the phase transition pressure. Single crystal measurements reveal that the pressure-induced structural transformation is accompanied by a dramatic 2 orders of magnitude drop of resistivity. Although the ambient pressure phase displays semiconducting behavior at low temperatures, metallic temperature dependent resistivity is observed for the high pressure phase, as surprisingly, are two resistivity anomalies with opposite pressure dependences, while one of them could be a magnetic transition and the other originates from Fermi surface instability. Assessment of the total energies for hypothetical magnetic structures for high pressure CaMn₂Bi₂ indicates that ferrimagnetism is thermodynamically favored.

On the effect of Ga and In substitutions in the Ca11Bi10 and Yb11Bi10 bismuthides crystallizing in the tetragonal Ho11Ge10 structure type

The Ga- and In-substituted bismuthides Ca₁₁Ga_xBi_10-x, Ca₁₁In_xBi_10-x, Yb₁₁Ga_xBi_10-x, and Yb₁₁In_xBi_10-x (x < 2) can be readily synthesized employing molten Ga or In metals as fluxes. They crystallize in the tetragonal space group I4/mmm and adopt the Ho₁₁Ge₁₀ structure type (Pearson code tI84; Wyckoff sequence n2 m j h2 e2 d). The structural response to the substitution of Bi with smaller and electron-poorer In or Ga has been studied by single-crystal X-ray diffraction methods for the case of Ca₁₁In_xBi_10-x [x = 1.73 (2); octabismuth undecacalcium diindium]. The refinements show that the In atoms substitute Bi only at the 8h site. The refined interatomic distances show an unconventional - for this structure type - bond-length distribution within the anionic sublattice. The latter can be viewed as consisting of isolated Bi^3- anions and [In₄Bi₈^20-] clusters for the idealized Ca₁₁In₂Bi₈ model. Formal electron counting and first-principle calculations show that the peculiar bonding in this compound drives the system toward an electron-precise state, thereby stabilizing the observed bond-length pattern.