Role of mid-gap states in charge transport and photoconductivity in semiconductor nanocrystal films

Enhanced Photodetection Performance of WSe2/V2O5 Nanocomposite on Flexible Substrate: Synergistic Advantages and Improved Efficiency

The two-dimensional (2D) chalcogenide WSe2/V2O5 composite nanostructures were synthesized using the hydrothermal method and extensively characterized with various spectroscopic techniques. X-ray diffraction analysis confirmed the hexagonal crystal structure exhibiting space symmetry of P63/mmc. Scanning electron microscopy images provided insights into the irregular and nonuniform morphology. Optical spectrum analysis indicated a band gap value of 2.01 eV for 15% WSe2/V2O5 nanostructures, as determined by the Wood and Tauc equation. Photoluminescence (PL) excitation spectra at emission wavelengths of 550 and 750 nm exhibited broad emission attributed to self-trapped excitons for V2O5 and WSe2 nanostructures. Under excitation at λexc = 365 nm, PL emission spectra displayed distinct peaks at 550 and 750 nm, demonstrating the ability to emit vivid red light. A device optimized for photoresponsivity (R) of approximately 7.80 × 10-1 A W-1 and detectivity (D) of around 8.65 × 1011 Jones, and quantum efficiency of approximately 3.42 × 10-2 A W-1 were achieved at a wavelength of 390 nm while using a lamination sheet as a substrate. These findings underscore the capability of devices for efficient photoconversion at specified wavelengths, indicating potential applications in sensing, imaging, and optical communication. The photoresponsivity of the device remained stable at 3.38 × 10-3 A W-1 at 0° and 3.09 × 10-3 A W-1 at 55° bending angle. This indicates the resilience of device to mechanical strain, making it ideal for flexible and wearable sensor applications. The structural, morphological, and optical characterizations confirm the suitability of luminescent WSe2/V2O5 chalcogenide for practical optoelectronic applications, especially in display technologies.

A Brief Review of Perovskite Quantum Dot Solar Cells: Synthesis, Property and Defect Passivation

Perovskite quantum dot solar cells (PQDSCs), as the promising candidate for the next generation of solar cell, have garnered the significant attention over the past decades. However, the performance and stability of PQDSCs are highly dependent on the properties of interfaces between the perovskite quantum dots (PQDs) and the other layers in the device. This work provides a brief overview of PQDSCs, including the synthesis of PQDs, the characteristics and preparation methods of PQDs, the photoelectric properties as the light absorption layer and optimization methods for PQDSCs with high efficiency. Future directions and potential applications are also highlighted.

Advancing Silver Bismuth Sulfide Quantum Dots for Practical Solar Cell Applications

Colloidal quantum dots (CQDs) show unique properties that distinguish them from their bulk form, the so-called quantum confinement effects. This feature manifests in tunable size-dependent band gaps and discrete energy levels, resulting in distinct optical and electronic properties. The investigation direction of colloidal quantum dots (CQDs) materials has started switching from high-performing materials based on Pb and Cd, which raise concerns regarding their toxicity, to more environmentally friendly compounds, such as AgBiS2. After the first breakthrough in solar cell application in 2016, the development of AgBiS2 QDs has been relatively slow, and many of the fundamental physical and chemical properties of this material are still unknown. Investigating the growth of AgBiS2 QDs is essential to understanding the fundamental properties that can improve this material's performance. This review comprehensively summarizes the synthesis strategies, ligand choice, and solar cell fabrication of AgBiS2 QDs. The development of PbS QDs is also highlighted as the foundation for improving the quality and performance of AgBiS2 QD. Furthermore, we prospectively discuss the future direction of AgBiS2 QD and its use for solar cell applications.

Colloidal quantum dot materials for next-generation near-infrared optoelectronics

Colloidal quantum dots (CQDs) are a promising class of materials for next-generation optoelectronic devices, such as displays, LEDs, lasers, photodetectors, and solar cells. CQDs can be obtained at low cost and in large quantities using wet chemistry. CQDs have also been produced using various materials, such as CdSe, InP, perovskites, PbS, PbSe, and InAs. Some of these CQD materials absorb and emit photons in the visible region, making them excellent candidates for displays and LEDs, while others interact with low-energy photons in the near-infrared (NIR) region and are intensively utilized in NIR lasers, NIR photodetectors, and solar cells. In this review, we have focused on NIR CQD materials and reviewed the development of CQD materials for solar cells, NIR lasers, and NIR photodetectors since the first set of reports on CQD materials in these particular applications.

Relativistic DFT Calculations of Cadmium and Selenium Solid-State NMR Spectra of CdSe Nanocrystal Surfaces

Solid-state NMR spectra have been used to probe the structure of CdSe nanocrystals and propose detailed models of their surface structures. Density functional theory (DFT)-optimized cluster models that represent probable molecular structures of carboxylate-coordinated surface sites have been proposed. However, to the best of our knowledge, 113Cd and 77Se chemical shifts have not been calculated for these surface models. We performed relativistic DFT calculations of cadmium and selenium magnetic shielding tensors on model compounds with previously measured solid-state NMR spectra with (i) the four-component Dirac-Kohn-Sham (DKS) Hamiltonian and (ii) the scalar and (iii) spin-orbit levels within the ZORA Hamiltonian. Molecular clusters with Cd and Se sites in varying bonding environments were used to model CdSe (100) and CdSe(111) surfaces capped with carboxylic acid ligands. Our calculations identify the observed 113Cd isotropic chemical shifts δ(iso) of -465, -318, and -146 ppm arising from CdSeO3, CdSe2O2, and CdSe3O surface groups, respectively, with very good agreement with experimental measurements. The 113Cd chemical shifts linearly decrease with the number of O-neighbors. The calculated spans (δ11 - δ33) encompass the experimental values for CdSe3O and CdSe2O2 clusters but are slightly larger than the measured value for CdSeO3 clusters. Relativistic DFT calculations predicted a one-bond 113Cd-77Se scalar coupling of 258 Hz, which is in good agreement with the experimental values of 250 Hz. With a dense coverage of carboxylic acid ligands, the CdSe (100) surface shows a distribution of Cd-Se bond lengths and J-couplings. Relativistic DFT simulations thus aid in interpretation of NMR spectra of CdSe nanocrystals and related nanomaterials.

Micrometer-Scale Carrier Transport in the Solid Film of Giant CdSe/CdS Nanocrystals Imaged by Transient Absorption Microscopy

For the practical applications in solar cells and photodetectors, semiconductor colloidal nanocrystals (NCs) are assembled into a high-concentration film with carrier transport characteristics, the full understanding and effective control of which are critical for the achievement of high light-to-electricity conversion efficiencies. Here we have applied transient absorption microscopy to the solid film of giant CdSe/CdS NCs and discovered that at high pump fluences the carrier transport could reach a long distance of ∼2 μm within ∼30 ps after laser pulse excitation. This intriguing behavior is attributed to the metal-insulator transition and the associated bandlike transport, which are promoted by the enhanced electronic coupling among neighboring NCs with extended wave functions overlap of the excited-state charge carriers. Besides providing fundamental transport information in the regime of high laser pump fluences, the above findings shed light on the rational design of high-power light detecting schemes based on colloidal NCs.

Electronic and magnetic properties of TATA-DNA sequence driven by chemical functionalization

The TATA box is a promoter sequence able to interact directly with the components of the basal transcription initiation machinery. We investigate the changes in the electronic and magnetic properties of a TATA-DNA sequence when functionalized with different chemical groups; using the first-principles density functional theory specifically, the TATA-DNA sequences were functionalized with methyl groups (CH₃ , methylation), amino groups (NH₂ , amination), imine groups (NH, imination), chloroamine groups (NCl₂ , chloramination), H-adatom (hydrogenation), and Cl-adatom (chlorination). The functional groups were anchored at nitrogen atoms from adenine and oxygen atoms from thymine at sites pointed as reactive regions. We demonstrated that chemical functionalization induces significant changes in charge transfer, hydrogen bond distance, and hydrogen bond energy. The hydrogenation and imination increased the hydrogen bond energy. Results also revealed that the chemical functionalization of DNA molecules exhibit a ferromagnetic ground state, reaching magnetization up to 4.665 μ_B and complex magnetic ordering. We further demonstrated that the functionalization could induce tautomerism (proton migration in the base pair systems). The present study provides a theoretical basis for understanding the functionalization further into DNA molecules and visualizing possible future applications.

Top-down synthesis and enhancing device adaptability of graphene quantum dots

Quantum dots (QD) are rapidly making their way into several application sectors including optoelectronics, and there is a strong need to focus on non-toxic QDs. In this work, we have synthesized graphene QDs in the size range of 1.4-4.2 nm from inexpensive graphite by oxidative cleavage using a sulphuric and nitric acid mixture. A subsequent hydrogen peroxide oxidation step, investigated using two thermal budgets, has resulted in QDs with excellent photoluminescence (PL) intensity. Prolonged, higher temperature oxidation results in smaller size GQDs. X-ray photoelectron spectroscopy analysis confirmed the role of ·OH radicals in the oxidation process and Raman analysis revealed that the higher thermal budget oxidation results in lower defect density. To overcome the challenges in device adaptability due to the inherent acidity in the QDs, a post-synthesis neutralization process was devised. The neutralized GQDs were formed into a film to be used as the active layer in a photodetector device. Fluorescence decay analysis showed there is no significant change in lifetime because of the film formation process. The fabricated GQD photodetector device exhibited high photocurrent under ultraviolet illumination with an ON/OFF ratio of 400% at an applied bias of ±1 V. The device performance underlines the high potential for the non-toxic, top-down synthesized GQDs for application in optoelectronic devices.

Mid-Infrared Intraband Photodetector via High Carrier Mobility HgSe Colloidal Quantum Dots

In this work, a room-temperature mixed-phase ligand exchange method is developed to obtain a relatively high carrier mobility (∼1 cm²/(V s)) on HgSe intraband colloidal quantum dot solids without any observable trap state. What is more, the doping from 1S_e to 1P_e state in the conduction band could be precisely controlled by additional salts during this method, proved by optical and transport experiments. The high mobility and controllable doping benefit the mid-infrared photodetector utilizing the 1S_e to 1P_e transition, with a 1000-fold improvement in response speed, which is several μs, a 55-fold increase in responsivity, which is 77 mA/W, and a 10-fold increase in specific detectivity, which is above 1.7 × 10⁹ Jones at 80 K. The high-performance photodetector could serve as an intraband infrared camera for thermal imaging, as well as a CO₂ gas sensor with a range from 0.25 to 2000 ppm.

Uncovering the multifaceted roles of nitrogen defects in graphitic carbon nitride for selective photocatalytic carbon dioxide reduction: a density functional theory study

Surface defect engineering on the nanoscale has attracted extensive research attention lately; however, its role in modulating the properties and catalytic performance of a semiconducting material has not been comprehensively covered. Here, we systematically unraveled the effect of defect engineering towards textural, electronic and optical properties of graphitic carbon nitride (g-C₃N₄), as well as its photocatalytic mechanism of CO₂ reduction using first-principle calculations by density functional theory through the introduction of various defect sites. Among the five unique atoms in g-C₃N₄, the vacancy site was found to be the most feasible at the two-coordinated nitrogen, N2. By initiating N2 point defects, an asymmetric electron density distribution was engendered around the vacancy region, which resulted in an evolution of semiconducting properties. We also discovered an improved charge separation efficiency and CO₂ adsorption affinity in g-C₃N₄, which rendered a more thermodynamically feasible pathway for CO₂ reduction to CO, CH₃OH and CH₄ fuels. This theoretical finding is hoped to shed light on the importance of the defect engineering strategy towards photocatalytic enhancement in g-C₃N₄.

Solution-Processed, Inverted AgBiS2 Nanocrystal Solar Cells

AgBiS₂ nanocrystals are a promising nontoxic alternative to PbS, CsPbI₃, and CdS quantum dots for solution-fabricated nanocrystal photovoltaics. In this work, we fabricated the first inverted (p-i-n) structure AgBiS₂ nanocrystal solar cells. We selected spray-coated NiO as the hole-transporting material and used PCBM/BCP as the electron-transporting material. Combining transient photocurrent and photovoltage measurements with femtosecond transient absorption spectroscopy, we investigated the charge collection process on metal oxide/AgBiS₂ interfaces and demonstrated that the NiO/AgBiS₂ NC junction in the p-i-n configuration is more efficient for charge carrier collection. The fabricated p-i-n solar cells exhibited a 4.3% power conversion efficiency (PCE), which was higher than that of conventional n-i-p solar cells fabricated using the same sample. Additionally, inverted devices showed an ultrahigh short-circuit current (J_SC) over 20.7 mA cm^-2 and 0.38 V open-circuit voltage (V_OC), suggesting their potential for further improvements in efficiency and, eventually, for large-scale production.

Influence of Ligand Structure on Excited State Surface Chemistry of Lead Sulfide Quantum Dots

The ligand-nanocrystal boundaries of colloidal quantum dots (QDs) mediate the primary energy and electron transfer processes that underpin photochemical and photocatalytic transformations at their surfaces. We use mid-infrared transient absorption spectroscopy to reveal the influence that ligand structure and bonding to nanocrystal surfaces have on the changes of the excited state surface chemistry of this boundary in PbS QDs and the corresponding impact on charge transfer processes between nanocrystals. We demonstrate that oleate ligands undergo marked changes in their bonding to surfaces in the excitonic excited states of the nanocrystals, indicating that oleate passivated PbS surfaces undergo significant structural changes following photoexcitation. These changes can impact the surface mobility of the ligands and the ability of redox shuttles to approach the nanocrystal surfaces to undergo charge transfer in photocatalytic reactions. In contrast, markedly different transient vibrational features are observed in iodide/mercaptoproprionic acid passivated PbS QD films that result from charge transfer between neighboring nanocrystals and localization of holes at the nanocrystal surfaces near MPA ligands. This ability to distinguish the influence that excitonic excited states vs charge transfer processes have on the surface chemistry of the ligand-nanocrystal boundary lays the groundwork for exploration of how this boundary can be understood and controlled for the design of nanocrystalline materials tailored for specific applications in solar energy harvesting and photocatalytic reactions.

Sub-level engineering strategy of nitrogen-induced Bi2O3/g-C3N4: a versatile photocatalyst for oxidation and reduction

Herein, the α-Bi₂O₃ nanocrystal decorated by nitrogen dopant and its heterojunction nanocomposite with g-C₃N₄ (N_0.1/Bi₂O₃/g-C₃N₄) is successfully fabricated for the first time, for photo-oxidation of RhB and photo-reduction of Cr(VI) to Cr(III). The resulting N_0.1/Bi₂O₃/g-C₃N₄ (3%) nanocomposite showed an optimal Cr(VI) photo-reduction and RhB photo-oxidation rates under visible-light irradiation, being 3-4 times higher than that of pure α-Bi₂O₃. The results from XPS confirmed the substitution of nitrogen with various oxidation states from N³⁺ to N^x+ (x < 5), due to the existence of different nitrogen oxides including N-O, O-N=O, and NO₃^- in the crystal structure. We investigated the reaction mechanism using catalytic tests, impedance spectroscopy, EPR technique, and density functional calculations. The DFT calculations presented the appearance of a new mid-gap hybrid of p states, comprised of N 2p, O 2p, and Bi 6P states, which enhance light absorption capacity and narrow band gap. The theoretical results were in excellent agreement with experimental UV-Vis data. The N_0.1/Bi₂O₃/g-C₃N₄ nanocomposite exhibited acceptable practical application value and recycling ability for removal of the contaminants. Such improved photocatalytic activity is originated from the modified band positions, new electron evolution pathway, introducing defects in α-Bi₂O₃ by insertion of N atoms into the Bi sites, and the enhanced charge carrier mobility between N_0.1/Bi₂O₃ and g-C₃N₄. The strategy to form nitrogen-doped bismuth-based nanocomposites may open a new opportunity to design atomic-level electronic defects by feasible methods to obtain a versatile photocatalyst material with simultaneous photo-reduction and photo-oxidation ability for removal of Cr(VI) and organic dyes from water.

Open-Circuit Voltage Loss in Lead Chalcogenide Quantum Dot Solar Cells

Lead chalcogenide colloidal quantum dot solar cells (CQDSCs) have received considerable attention due to their broad and tunable absorption and high stability. Presently, lead chalcogenide CQDSC has achieved a power conversion efficiency of ≈14%. However, the state-of-the-art lead chalcogenide CQDSC still has an open-circuit voltage (V_oc ) loss of ≈0.45 V, which is significantly higher than those of c-Si and perovskite solar cells. Such high V_oc loss severely limits the performance improvement and commercialization of lead chalcogenide CQDSCs. In this review, the V_oc loss is first analyzed via detailed balance theory and the origin of V_oc loss from both solar absorber and interface is summarized. Subsequently, various strategies for improving the V_oc from the solar absorber, including the passivation strategies during the synthesis and ligand exchange are overviewed. The great impact of the ligand exchange process on CQD passivation is highlighted and the corresponding strategies to further reduce the V_oc loss are summarized. Finally, various strategies are discussed to reduce interface V_oc loss from charge transport layers. More importantly, the great potential of achieving performance breakthroughs via various organic hole transport layers is highlighted and the existing challenges toward commercialization are discussed.

Revealing the Surface Structure of CdSe Nanocrystals by Dynamic Nuclear Polarization-Enhanced 77Se and 113Cd Solid-State NMR Spectroscopy

Dynamic nuclear polarization (DNP) solid-state NMR (SSNMR) spectroscopy was used to obtain detailed surface structures of zinc blende CdSe nanocrystals (NCs) with plate or spheroidal morphologies which are capped by carboxylic acid ligands. 1D ¹¹³Cd and ⁷⁷Se cross-polarization magic angle spinning (CPMAS) NMR spectra revealed distinct signals from Cd and Se atoms on the surface of the NCs, and those residing in bulk-like environments, below the surface. ¹¹³Cd cross-polarization magic-angle-turning (CP-MAT) experiments identified CdSe₃O, CdSe₂O₂, and CdSeO₃ Cd coordination environments on the surface of the NCs, where the oxygen atoms are presumably from coordinated carboxylate ligands. The sensitivity gain from DNP enabled natural isotopic abundance 2D homonuclear ¹¹³Cd-¹¹³Cd and ⁷⁷Se-⁷⁷Se and heteronuclear ¹¹³Cd-⁷⁷Se scalar correlation solid-state NMR experiments which revealed the connectivity of the Cd and Se atoms. Importantly, ⁷⁷Se{¹¹³Cd} scalar heteronuclear multiple quantum coherence (J-HMQC) experiments were used to selectively measure one-bond ⁷⁷Se-¹¹³Cd scalar coupling constants (¹J(⁷⁷Se, ¹¹³Cd)). With knowledge of ¹J(⁷⁷Se, ¹¹³Cd), heteronuclear ⁷⁷Se{¹¹³Cd} spin echo (J-resolved) NMR experiments were used to determine the number of Cd atoms bonded to Se atoms and vice versa. The J-resolved experiments directly confirmed that major Cd and Se surface species have CdSe₂O₂ and SeCd₄ stoichiometries, respectively. Considering the crystal structure of zinc blende CdSe and the similarity of the solid-state NMR data for the platelets and spheroids, we conclude that the surface of the spheroidal CdSe NCs is primarily composed of {100} facets. The methods outlined here will generally be applicable to obtain detailed surface structures of various main group semiconductor nanoparticles.

Materials Design and Optimization for Next-Generation Solar Cell and Light-Emitting Technologies

We review some of the most potent directions in the design of materials for next-generation solar cell and light-emitting technologies that go beyond traditional solid-state inorganic semiconductor-based devices, from both the experimental and computational standpoints. We focus on selected recent conceptual advances in tackling issues which are expected to significantly impact applied literature in the coming years. Specifically, we consider solution processability, design of dopant-free charge transport materials, two-dimensional conjugated polymeric semiconductors, and colloidal quantum dot assemblies in the fields of experimental synthesis, characterization, and device fabrication. Key modeling issues that we consider are calculations of optical properties and of effects of aggregation, including recent advances in methods beyond linear-response time-dependent density functional theory and recent insights into the effects of correlation when going beyond the single-particle ansatz as well as in the context of modeling of thermally activated fluorescence.

Understanding the structure, bonding and reactions of nanocrystalline semiconductors: a novel high-resolution instrumental method of solid-state synchronous luminescence spectroscopy

This Perspective Article describes the recent advancements in studies of nanocrystalline metal oxides using a novel ultra-high resolution method, solid-state synchronous luminescence spectroscopy (SS-SLS). Semiconductors notably include titanium dioxide and these studies shed light on the detailed electronic structure, composition, and their reactions. First, we critically discuss the limitations of the major existing non-spectroscopic and spectroscopic methods of characterization of electronic structure of nanocrystalline semiconductors and insulators. Second, we describe the foundations and the setup of SS-SLS as an enhanced-resolution, facile, non-contact, non-destructive, and highly capable method of studies of nanomaterials. Third, the following insights are featured which are obtained by SS-SLS, but are not available by other methods: (a) detection of traps of electric charge (specific mid-gap states); (b) discrimination between "surface" and "bulk" sites; (c) in situ studies of composite nanomaterials and mechanisms of reactions, (d) the derivative SS-SLS for accurate determination of energies of absorption and emission. The specific advantages of SS-SLS versus other methods and in direct comparison with "conventional" photoluminescence spectroscopy are highlighted. Finally, new opportunities and challenges of SS-SLS are presented. SS-SLS is an advanced spectroscopic method with significant potential to aid academia and industry in studies of chemo-sensing, photocatalysis, optoelectronic materials, applied surface science, development of instrumental analysis, and studies of mechanisms of surface and "bulk" chemical reactions.

Preparation of hydrogen, fluorine and chlorine doped and co-doped titanium dioxide photocatalysts: a theoretical and experimental approach

Titanium dioxide (TiO₂) has a strong photocatalytic activity in the ultra-violet part of the spectrum combined with excellent chemical stability and abundance. However, its photocatalytic efficiency is prohibited by limited absorption within the visible range derived from its wide band gap value and the presence of charge trapping states located at the band edges, which act as electron–hole recombination centers. Herein, we modify the band gap and improve the optical properties of TiO₂ via co-doping with hydrogen and halogen. The present density functional theory (DFT) calculations indicate that hydrogen is incorporated in interstitial sites while fluorine and chlorine can be inserted both as interstitial and oxygen substitutional defects. To investigate the synergy of dopants in TiO₂ experimental characterization techniques such as Fourier transform infrared (FTIR), X-ray diffraction (XRD), X-ray and ultra-violet photoelectron spectroscopy (XPS/UPS), UV–Vis absorption and scanning electron microscopy (SEM) measurements, have been conducted. The observations suggest that the oxide’s band gap is reduced upon halogen doping, particularly for chlorine, making this material promising for energy harvesting devices. The studies on hydrogen production ability of these materials support the enhanced hydrogen production rates for chlorine doped (Cl:TiO₂) and hydrogenated (H:TiO₂) oxides compared to the pristine TiO₂ reference.

Eco-Friendly AgBiS2 Nanocrystal/ZnO Nanowire Heterojunction Solar Cells with Enhanced Carrier Collection Efficiency

AgBiS₂ nanocrystals (NCs) are nontoxic, lead-free, and near-infrared absorbing materials. Eco-friendly solar cells were constructed using interdigitated layers of ZnO nanowires (NWs) and AgBiS₂ NCs, with the aim of elongating the otherwise short carrier diffusion length of the AgBiS₂ NC assembly. AgBiS₂ NCs were uniformly infiltrated into the ZnO NW layers using a low-cost and easily scalable dip coating method. The resulting ZnO NW/AgBiS₂ NC interdigitated structures provided efficient carrier pathways in constructed nanowire solar cells (NWSCs), composed of a transparent electrode/ZnO NW/AgBiS₂ NC interdigitated layer/P3HT hole transport layer/Au. The photocurrent external quantum efficiency (EQE) in the visible to near-infrared regions was enhanced compared to those of the control solar cells made with ZnO/AgBiS₂ tandem layered structures. The maximum EQE for the NWSCs reached 82% in the visible region, which is higher than the EQE values previously reported for solar cells fabricated with ZnO/AgBiS₂ NCs. Air stability tests on unsealed NWSCs demonstrated that 90% or more of the initial power conversion efficiency was maintained even after 6 months.

The role of ligands in electron transport in nanocrystal solids

We investigate theoretically the transport of electrons and holes in crystalline solids consisting of three-dimensional arrays of semiconductor nanocrystals passivated by two types of organic ligands-linear chain carboxylates and functionalized aromatic cinnamates. We focus on a critical quantity in transport: the quantum-mechanical overlap of the strongly confined electron and hole wavefunctions on neighboring nanocrystals. Using results from density-functional-theory (DFT) calculations, we construct a one-dimensional model system whose analytic wavefunctions reproduce the full DFT numerical overlap values. By investigating the analytic behavior of this model, we reveal several important features of electron transport. The most significant is that the wavefunction overlap decays exponentially with ligand length, with a characteristic decay length that depends primarily on properties of the ligand and is almost independent of the size and type of nanocrystal. Functionalization of the ligands can also affect the overlap by changing the height of the tunneling barrier. The physically transparent analytic expressions we obtain for the wavefunction overlap and its decay length should be useful for future efforts to control transport in nanocrystal solids.

Manipulating Electronic Structure from the Bottom-Up: Colloidal Nanocrystal-Based Semiconductors

Semiconductors assembled from colloidal nanocrystals (NCs) are often described in the same terms as their single-crystalline counterparts with references to conduction and valence band edges, doping densities, and electronic defects; however, how and why semiconductor properties manifest in these bottom-up fabricated thin films can be fundamentally different. In this Perspective, we describe the factors that determine the electronic structure in colloidal NC-based semiconductors, and comment on approaches for measuring or calculating this electronic structure. Finally, we discuss future directions for these semiconductors and highlight their potential to bridge the divide between localized quantum effects and long-range transport in thin films.

Structure-Transport Correlation Reveals Anisotropic Charge Transport in Coupled PbS Nanocrystal Superlattices

The assembly of colloidal semiconductive nanocrystals into highly ordered superlattices predicts novel structure-related properties by design. However, those structure-property relationships, such as charge transport depending on the structure or even directions of the superlattice, have remained unrevealed so far. Here, electric transport measurements and X-ray nanodiffraction are performed on self-assembled lead sulfide nanocrystal superlattices to investigate direction-dependent charge carrier transport in microscopic domains of these materials. By angular X-ray cross-correlation analysis, the structure and orientation of individual superlattices is determined, which are directly correlated with the electronic properties of the same microdomains. By that, strong evidence for the effect of superlattice crystallinity on the electric conductivity is found. Further, anisotropic charge transport in highly ordered monocrystalline domains is revealed, which is attributed to the dominant effect of shortest interparticle distance. This implies that transport anisotropy should be a general feature of weakly coupled nanocrystal superlattices.

Charge transport in semiconductors assembled from nanocrystal quantum dots

The potential of semiconductors assembled from nanocrystals has been demonstrated for a broad array of electronic and optoelectronic devices, including transistors, light emitting diodes, solar cells, photodetectors, thermoelectrics, and phase change memory cells. Despite the commercial success of nanocrystal quantum dots as optical absorbers and emitters, applications involving charge transport through nanocrystal semiconductors have eluded exploitation due to the inability to predictively control their electronic properties. Here, we perform large-scale, ab initio simulations to understand carrier transport, generation, and trapping in strongly confined nanocrystal quantum dot-based semiconductors from first principles. We use these findings to build a predictive model for charge transport in these materials, which we validate experimentally. Our insights provide a path for systematic engineering of these semiconductors, which in fact offer previously unexplored opportunities for tunability not achievable in other semiconductor systems.

Gap state distribution and Fermi level pinning in monolayer to multilayer MoS2 field effect transistors

Gap states and Fermi level pinning play an important role in all semiconductor devices, but even more in transition metal dichalcogenide-based devices due to their high surface to volume ratio and the absence of intralayer dangling bonds. Here, we measure Fermi level pinning using Kelvin probe force microscopy, extract the corresponding electronic state distribution within the band gap, and present a systematic comparison between the gap state distribution obtained for exfoliated single layer, bilayer and thick MoS2 FET samples. It is found that the gap state distribution in all cases decreases from the conduction band edge and is in the order of 1019 eV-1 cm-3 and slightly decreases with increasing channel thickness. Strong Fermi level pinning is observed near the conduction band edge, and it decreases as it approaches the middle and lower part of the bandgap.

AgBiS2 as a low-cost and eco-friendly all-inorganic photovoltaic material: nanoscale morphology-property relationship

Solar cells made of low-cost solution-processed all-inorganic materials are a promising alternative to conventional solar cells made of high-temperature processed inorganic materials, especially because many high-temperature processed inorganic materials contain toxic element(s) such as lead or cadmium (e.g., CsPbI₃ perovskite, PbS, CdTe and CdS(Se)). AgBiS₂ nanocrystals, consisting of earth-abundant elements but without lead and cadmium, have already emerged as a promising candidate in high-performance solar cells. However, the nanoscale morphology-optoelectronic property relationship for AgBiS₂ nanocrystals is still largely unknown. Herein, we investigate the electronic properties of various AgBiS₂ nanocrystals by using first-principles computation. We show that the optoelectronic properties of bulk AgBiS₂ are highly dependent on the M-S-M-S- (M: Ag or Bi) orderings. Moreover, because Ag-S-Ag-S- and Bi-S-Bi-S- in AgBiS₂ bulk crystals contribute respectively to the valence band maximum and conduction band minimum, these unique chemical orderings actually benefit easy separation of mobile electrons and holes for photovoltaic application. More importantly, we find that AgBiS₂ nanocrystals (NCs) can exhibit markedly different optoelectronic properties, depending on their stoichiometry. NCs with minor off-stoichiometry give rise to mid-gap states, whereas NCs with substantial off-stoichiometry give rise to many deep defect states in the band gap, and some NCs even show metallic-like electronic behavior. We also find that the deep-defect states can be removed through ligand passivation with optimal coverage. The new insights into the nanoscale morphology-optoelectronic property relationship offer a rational design strategy to engineer the band alignment of AgBiS₂ NC layers while addressing some known challenging issues inherent in all-inorganic photovoltaic materials.

PbE (E = S, Se) Colloidal Quantum Dot-Layered 2D Material Hybrid Photodetectors

Hybrid lead chalcogenide (PbE) (E = S, Se) quantum dot (QD)-layered 2D systems are an emerging class of photodetectors with unique potential to expand the range of current technologies and easily integrate into current complementary metal-oxide-semiconductor (CMOS)-compatible architectures. Herein, we review recent advancements in hybrid PbE QD-layered 2D photodetectors and place them in the context of key findings from studies of charge transport in layered 2D materials and QD films that provide lessons to be applied to the hybrid system. Photodetectors utilizing a range of layered 2D materials including graphene and transition metal dichalcogenides sensitized with PbE QDs in various device architectures are presented. Figures of merit such as responsivity (R) and detectivity (D*) are reviewed for a multitude of devices in order to compare detector performance. Finally, a look to the future considers possible avenues for future device development, including potential new materials and device treatment/fabrication options.

Defect processes in F and Cl doped anatase TiO2

Titanium dioxide represents one of the most widely studied transition metal oxides due to its high chemical stability, non-toxicity, abundance, electron transport capability in many classes of optoelectronic devices and excellent photocatalytic properties. Nevertheless, the wide bang gap of pristine oxide reduces its electron transport ability and photocatalytic activity. Doping with halides and other elements has been proven an efficient defect engineering strategy in order to reduce the band gap and maximize the photocatalytic activity. In the present study, we apply Density Functional Theory to investigate the influence of fluorine and chlorine doping on the electronic properties of TiO₂. Furthermore, we present a complete investigation of spin polarized density functional theory of the (001) surface doped with F and Cl in order to elaborate changes in the electronic structure and compare them with the bulk TiO₂.

Fast, Infrared-Active Optical Transistors Based on Dye-Sensitized CdSe Nanocrystals

We report an optically gated transistor composed of CdSe nanocrystals (NCs), sensitized with the dye zinc β-tetraaminophthalocyanine for operation in the first telecom window. This device shows a high ON/OFF ratio of 6 orders of magnitude in the red spectral region and an unprecedented 4.5 orders of magnitude at 847 nm. By transient absorption spectroscopy, we reveal that this unexpected infrared sensitivity is due to electron transfer from the dye to the CdSe NCs within 5 ps. We show by time-resolved photocurrent measurements that this enables fast rise times during near-infrared optical gating of 47 ± 11 ns. Electronic coupling and accelerated nonradiative recombination of charge carriers at the interface between the dye and the CdSe NCs are further corroborated by steady-state and time-resolved photoluminescence measurements. Field-effect transistor measurements indicate that the increase in photocurrent upon laser illumination is mainly due to the increase in the carrier concentration while the mobility remains unchanged. Our results illustrate that organic dyes as ligands for NCs invoke new optoelectronic functionalities, such as fast optical gating at sub-bandgap optical excitation energies.

Gapless van der Waals Heterostructures for Infrared Optoelectronic Devices

Mixed-dimensional van der Waals (vdW) heterostructures based on two-dimensional (2D) materials exhibit immense potential in infrared optoelectronic applications. However, the weak vdW coupling results in limiting performance of infrared optoelectronic device. Here, we exploit a gapless heterostructure that S dangling bonds of nonlayered PbS are connected to the bonding sites of MoS₂ (with factitious S vacancies) via strong orbital hybridization. The strong interface coupling leads to ultrahigh responsivity and photogain (G) exceeding 10⁵, and the detectivity (D*) is greater than 10¹⁴ Jones. More importantly, the gapless heterostructure shows fast rise and decay times about 47 and 49 μs, respectively, which is 5 orders of magnitude faster than that of transferred vdW heterostructures. Furthermore, an ultrahigh photon-triggered on/off ratio of 1.6 × 10⁶ is achieved, which is 4 orders of magnitude higher than that of transferred vdW heterostructures. This architecture can offer an effective approach for advanced infrared optoelectronic devices.

Energetics at the Surface: Direct Optical Mapping of Core and Surface Electronic Structure in CdSe Quantum Dots Using Broadband Electronic Sum Frequency Generation Microspectroscopy

Understanding and controlling the electronic structure of nanomaterials is the key to tailoring their use in a wide range of practical applications. Despite this need, many important electronic states are invisible to conventional optical measurements and are typically identified indirectly based on their inferred impact on luminescence properties. This is especially common and important in the study of nanomaterial surfaces and their associated defects. Surface trap states play a crucial role in photophysical processes yet remain remarkably poorly understood. Here we demonstrate for the first time that broadband electronic sum frequency generation (eSFG) microspectroscopy can directly map the optically bright and dark states of nanoparticles, including the elusive below gap states. This new approach is applied to model cadmium selenide (CdSe) quantum dots (QDs), where the energies of surface trap states have eluded direct optical characterization for decades. Our eSFG measurements show clear signatures of electronic transitions both above the band gap, which we assign to previously reported one- and two-photon transitions associated with the CdSe core, as well as broad spectral signatures below the band gap that are attributed to surface states. In addition to the core states, this analysis reveals two distinct distributions of below gap states, providing the first direct optical measurement of both shallow and deep surface states on this system. Finally, chemical modification of the surfaces via oxidation results in the relative increase in the signals originating from the surface states. Overall, our eSFG experiments provide an avenue to directly map the entirety of the QD core and surface electronic structure, which is expected to open up opportunities to study how these materials are grown in situ and how surface states can be controlled to tune functionality.

Flexible colloidal nanocrystal electronics

Nanometer-scale crystals of bulk group IV, III-V, II-VI, IV-VI, I-III-VI2, and metal-halide perovskite semiconductors, dispersed in solvents, are known as colloidal nanocrystals and form an excellent, solution-processable materials class for thin film and flexible electronics. This review surveys the size, composition, and surface chemistry-dependent properties of semiconductor NCs and thin films derived therefrom and provides physico-chemical insight into the recent leaps forward in the performance of NC field-effect transistors. Device design and fabrication methods are described that have enabled the demonstration and scaling up in complexity and area and scaling down in device size of flexible, colloidal nanocrystal integrated circuits. Finally, taking stock of the advances made in the science and engineering of NC systems, challenges and opportunities are presented to develop next-generation, colloidal NC electronic materials and devices, important to their potential in future computational and in Internet of Things applications.

High-efficiency colloidal quantum dot infrared light-emitting diodes via engineering at the supra-nanocrystalline level

Colloidal quantum dot (CQD) light-emitting diodes (LEDs) deliver a compelling performance in the visible, yet infrared CQD LEDs underperform their visible-emitting counterparts, largely due to their low photoluminescence quantum efficiency. Here we employ a ternary blend of CQD thin film that comprises a binary host matrix that serves to electronically passivate as well as to cater for an efficient and balanced carrier supply to the emitting quantum dot species. In doing so, we report infrared PbS CQD LEDs with an external quantum efficiency of ~7.9% and a power conversion efficiency of ~9.3%, thanks to their very low density of trap states, on the order of 10¹⁴ cm^-3, and very high photoluminescence quantum efficiency in electrically conductive quantum dot solids of more than 60%. When these blend devices operate as solar cells they deliver an open circuit voltage that approaches their radiative limit thanks to the synergistic effect of the reduced trap-state density and the density of state modification in the nanocomposite.

Charge-Transport Mechanisms in CuInSe xS2- x Quantum-Dot Films

Colloidal quantum dots (QDs) have attracted considerable attention as promising materials for solution-processable electronic and optoelectronic devices. Copper indium selenium sulfide (CuInSe _xS_{2- x} or CISeS) QDs are particularly attractive as an environmentally benign alternative to the much more extensively studied QDs containing toxic metals such as Cd and Pb. Carrier transport properties of CISeS-QD films, however, are still poorly understood. Here, we aim to elucidate the factors that control charge conductance in CISeS QD solids and, based on this knowledge, develop practical approaches for controlling the polarity of charge transport and carrier mobilities. To this end, we incorporate CISeS QDs into field-effect transistors (FETs) and perform detailed characterization of these devices as a function of the Se/(Se+S) ratio, surface treatment, thermal annealing, and the identity of source and drain electrodes. We observe that as-synthesized CuInSe _xS_{2- x} QDs exhibit degenerate p-type transport, likely due to metal vacancies and Cu_In^'' anti-site defects (Cu¹⁺ on an In³⁺ site) that act as acceptor states. Moderate-temperature annealing of the films in the presence of indium source and drain electrodes leads to switching of the transport polarity to nondegenerate n-type, which can be attributed to the formation of In-related defects such as In_Cu^•• (an In³⁺ cation on a Cu¹⁺ site) or In_i^••• (interstitial In³⁺) acting as donors. We observe that the carrier mobilities increase dramatically (by 3 orders of magnitude) with increasing Se/(Se+S) ratio in both n- and p-type devices. To explain this observation, we propose a two-state conductance model, which invokes a high-mobility intrinsic band-edge state and a low-mobility defect-related intragap state. These states are thermally coupled, and their relative occupancies depend on both QD composition and temperature. Our observations suggest that the increase in the relative fraction of Se moves conduction- and valence band edges closer to low-mobility intragap levels. This results in increased relative occupancy of the intrinsic band-edge states and a corresponding growth of the measured mobility. Further improvement in charge-transport characteristics of the CISeS QD samples as well as their stability is obtained by infilling the QD films with amorphous Al₂O₃ using atomic layer deposition.

Energy level tuned indium arsenide colloidal quantum dot films for efficient photovoltaics

We introduce indium arsenide colloidal quantum dot films for photovoltaic devices, fabricated by two-step surface modification. Native ligands and unwanted oxides on the surface are peeled off followed by passivating with incoming atomic or short ligands. The near-infrared-absorbing n-type indium arsenide colloidal quantum dot films can be tuned in energy-level positions up to 0.4 eV depending on the surface chemistry, and consequently, they boost collection efficiency when used in various emerging solar cells. As an example, we demonstrate p-n junction between n-type indium arsenide and p-type lead sulfide colloidal quantum dot layers, which leads to a favorable electronic band alignment and charge extraction from both colloidal quantum dot layers. A certified power conversion efficiency of 7.92% is achieved without additionally supporting carrier transport layers. This study provides richer materials to explore for high-efficiency emerging photovoltaics and will broaden research interest for various optoelectronic applications using the n-type covalent nanocrystal arrays.

Quantum Dot Solar Cells: Small Beginnings Have Large Impacts

From a niche field over 30 years ago, quantum dots (QDs) have developed into viable materials for many commercial optoelectronic devices. We discuss the advancements in Pb-based QD solar cells (QDSCs) from a viewpoint of the pathways an excited state can take when relaxing back to the ground state. Systematically understanding the fundamental processes occurring in QDs has led to improvements in solar cell efficiency from ~3% to over 13% in 8 years. We compile data from ~200 articles reporting functioning QDSCs to give an overview of the current limitations in the technology. We find that the open circuit voltage limits the device efficiency and propose some strategies for overcoming this limitation.

Charge Transport in Trap-Sensitized Infrared PbS Quantum-Dot-Based Photoconductors: Pros and Cons

Control of quantum-dot (QD) surface chemistry offers a direct approach for the tuning of charge-carrier dynamics in photoconductors based on strongly coupled QD solids. We investigate the effects of altering the surface chemistry of PbS QDs in such QD solids via ligand exchange using 3-mercaptopropionic acid (MPA) and tetrabutylammonium iodide (TBAI). The roll-to-roll compatible doctor-blade technique was used for the fabrication of the QD solid films as the photoactive component in photoconductors and field-effect phototransistors. The ligand exchange of the QD solid film with MPA yields superior device performance with higher photosensitivity and detectivity, which is due to less dark current and lower noise level as compared to ligand exchange with TBAI. In both cases, the mechanism responsible for photoconductivity is related to trap sensitization of the QD solid, in which traps are responsible of high photoconductive gain values, but slow response times under very low incident optical power (<1 pW). At medium⁻high incident optical powers (>100 pW), where traps are filled, both MPA- and TBAI-treated photodevices exhibit similar behavior, characterized by lower responsivity and faster response time, as limited by the mobility in the QD solid.

Surface States Mediate Triplet Energy Transfer in Nanocrystal-Acene Composite Systems

Hybrid organic:inorganic materials composed of semiconductor nanocrystals functionalized with acene ligands have recently emerged as a promising platform for photon upconversion. Infrared light absorbed by a nanocrystal excites charge carriers that can pass to surface-bound acenes, forming triplet excitons capable of fusing to produce visible radiation. To fully realize this scheme, energy transfer between nanocrystals and acenes must occur with high efficiency, yet the mechanism of this process remains poorly understood. To improve our knowledge of the fundamental steps involved in nanoparticle:acene energy transfer, we used ultrafast transient absorption to investigate excited electronic dynamics of PbS nanocrystals chemically functionalized with 6,13-bis(triisopropylsilylethynyl)pentacene (TIPS-pentacene) ligands. We find photoexcitation of PbS does not lead to direct triplet energy transfer to surface-bound TIPS-pentacene molecules but rather to the formation of an intermediate state within 40 ps. This intermediate persists for ∼100 ns before evolving to produce TIPS-pentacene triplet excitons. Analysis of transient absorption lineshapes suggests this intermediate corresponds to charge carriers localized at the PbS nanocrystal surface. This hypothesis is supported by constrained DFT calculations that find a large number of spin-triplet states at PbS NC surfaces. Though some of these states can facilitate triplet transfer, others serve as traps that hinder it. Our results highlight that nanocrystal surfaces play an active role in mediating energy transfer to bound acene ligands and must be considered when optimizing composite NC-based materials for photon upconversion, photocatalysis, and other optoelectronic applications.

Exciton-Delocalizing Ligands Can Speed Up Energy Migration in Nanocrystal Solids

Researchers have long sought to use surface ligands to enhance energy migration in nanocrystal solids by decreasing the physical separation between nanocrystals and strengthening their electronic coupling. Exciton-delocalizing ligands, which possess frontier molecular orbitals that strongly mix with nanocrystal band-edge states, are well-suited for this role because they can facilitate carrier-wave function extension beyond the nanocrystal core, reducing barriers for energy transfer. This report details the use of the exciton-delocalizing ligand phenyldithiocarbamate (PDTC) to tune the transport rate and diffusion length of excitons in CdSe nanocrystal solids. A film composed of oleate-terminated CdSe nanocrystals is subjected to a solid-state ligand exchange to replace oleate with PDTC. Exciton migration in the films is subsequently investigated by femtosecond transient absorption. Our experiments indicate that the treatment of nanocrystal films with PDTC leads to rapid (∼400 fs) downhill energy migration (∼80 meV), while no such migration occurs in oleate-capped films. Kinetic Monte Carlo simulations allow us to extract both rates and length scales for exciton diffusion in PDTC-treated films. These simulations reproduce dynamics observed in transient absorption measurements over a range of temperatures and confirm excitons hop via a Miller-Abrahams mechanism. Importantly, our experiments and simulations show PDTC treatment increases the exciton hopping rate to 200 fs, an improvement of 5 orders of magnitude relative to oleate-capped films. This exciton hopping rate stands as one of the fastest determined for CdSe solids. The facile, room-temperature processing and improved transport properties offered by the solid-state exchange of exciton-delocalizing ligands show they offer promise for the construction of strongly coupled nanocrystal arrays.

Intra- and inter-nanocrystal charge transport in nanocrystal films

The exploitation of semiconductor nanocrystal (NC) films in novel electronic and optoelectronic applications requires a better understanding of charge transport in these systems. Here, we develop a model of charge transport in NC films, based on a generalization of the concept of transport energy level ET to nanocrystal assemblies, which considers both intra- and inter-NC charge transfer processes. We conclude that the role played by each of these processes can be probed from temperature-dependent measurements of charge carrier density n and mobility μ in the same films. The model also enables the determination of the position of the Fermi energy level EF with respect to ET, an important parameter of charge transport in semiconductor materials, from the temperature dependence of n. Moreover, we provide support to an essentially temperature-independent intra-NC charge carrier mobility, considered in the transport level concept, and consequently the frequently observed temperature dependence of the overall mobility μ in NC films results from a temperature variation of the inter-NC charge transport processes. Importantly, we also conclude that the temperature dependence of conductivity in NC films should result in general from a combination of temperature variations of both n and μ. By applying the model to solution-processed Si NC films, we conclude that transport within each NC is similar to that in amorphous Si (a-Si), with charges hopping along band tail states located below the conduction band edge. For Si NCs, we obtain values of ET - EF of ∼0.25 eV. The overall mobility μ in Si NC films is significantly further reduced with respect to that typically found in a-Si due to the additional transport constraints imposed by inter-NC transfer processes inherent to a nanoparticulate film. Our model accounting for inter- and intra-NC charge transport processes provides a simple and more general description of charge transport that can be broadly applied to films of semiconductor NCs.